WO2009011289A1 - ポジ型レジスト組成物およびそれを用いたパターン形成方法 - Google Patents
ポジ型レジスト組成物およびそれを用いたパターン形成方法 Download PDFInfo
- Publication number
- WO2009011289A1 WO2009011289A1 PCT/JP2008/062524 JP2008062524W WO2009011289A1 WO 2009011289 A1 WO2009011289 A1 WO 2009011289A1 JP 2008062524 W JP2008062524 W JP 2008062524W WO 2009011289 A1 WO2009011289 A1 WO 2009011289A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- positive
- resist composition
- working resist
- pattern formation
- working
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1809—C9-(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1812—C12-(meth)acrylate, e.g. lauryl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/668,674 US7955780B2 (en) | 2007-07-13 | 2008-07-10 | Positive resist composition and pattern forming method using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-184394 | 2007-07-13 | ||
JP2007184394 | 2007-07-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009011289A1 true WO2009011289A1 (ja) | 2009-01-22 |
Family
ID=40259624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062524 WO2009011289A1 (ja) | 2007-07-13 | 2008-07-10 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7955780B2 (ja) |
JP (1) | JP4505522B2 (ja) |
KR (1) | KR20100028101A (ja) |
WO (1) | WO2009011289A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018024852A (ja) * | 2016-07-29 | 2018-02-15 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8252503B2 (en) * | 2007-08-24 | 2012-08-28 | Az Electronic Materials Usa Corp. | Photoresist compositions |
JP5277039B2 (ja) * | 2009-03-30 | 2013-08-28 | 富士フイルム株式会社 | 平版印刷版原版およびその製版方法 |
JP5645459B2 (ja) * | 2009-07-10 | 2014-12-24 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法 |
JP5608492B2 (ja) * | 2009-09-18 | 2014-10-15 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法 |
JPWO2011111641A1 (ja) * | 2010-03-09 | 2013-06-27 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP2012022212A (ja) * | 2010-07-15 | 2012-02-02 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、レジストパターン形成方法、新規な化合物、および酸発生剤 |
WO2012036250A1 (ja) * | 2010-09-17 | 2012-03-22 | Jsr株式会社 | 感放射線性樹脂組成物、重合体及びレジストパターン形成方法 |
US8597869B2 (en) * | 2010-10-25 | 2013-12-03 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt, resist composition, and patterning process |
JP6144005B2 (ja) * | 2010-11-15 | 2017-06-07 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 糖成分を含む組成物およびフォトリソグラフィ方法 |
US9081280B2 (en) * | 2011-02-24 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist having improved extreme-ultraviolet lithography imaging performance |
JP5933339B2 (ja) * | 2012-05-23 | 2016-06-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP2014074830A (ja) * | 2012-10-05 | 2014-04-24 | Mitsubishi Rayon Co Ltd | リソグラフィー用重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法 |
KR101400390B1 (ko) * | 2013-02-08 | 2014-05-30 | 엘지디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 유기전계발광표시장치의 제조방법 |
JP6665528B2 (ja) * | 2015-12-25 | 2020-03-13 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子 |
JP7249094B2 (ja) * | 2016-04-04 | 2023-03-30 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP7249095B2 (ja) * | 2016-04-04 | 2023-03-30 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP7059515B2 (ja) * | 2016-04-04 | 2022-04-26 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP6667361B2 (ja) * | 2016-05-06 | 2020-03-18 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物 |
JP7056024B2 (ja) * | 2016-07-29 | 2022-04-19 | 住友化学株式会社 | 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP6845050B2 (ja) * | 2017-03-10 | 2021-03-17 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11119434A (ja) * | 1997-10-09 | 1999-04-30 | Fujitsu Ltd | レジスト材料及びレジストパターンの形成方法 |
JP2004334156A (ja) * | 2002-08-29 | 2004-11-25 | Jsr Corp | 感放射線性樹脂組成物 |
WO2005085301A1 (ja) * | 2004-03-08 | 2005-09-15 | Mitsubishi Rayon Co., Ltd. | レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物 |
JP2006091762A (ja) * | 2004-09-27 | 2006-04-06 | Maruzen Petrochem Co Ltd | ポジ型感光性樹脂及び新規ジチオール化合物 |
JP2006249225A (ja) * | 2005-03-10 | 2006-09-21 | Maruzen Petrochem Co Ltd | ポジ型感光性樹脂、その製造方法及びポジ型感光性樹脂を含むレジスト組成物 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3796560B2 (ja) | 1999-01-27 | 2006-07-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びパターン形成方法 |
KR100647379B1 (ko) | 1999-07-30 | 2006-11-17 | 주식회사 하이닉스반도체 | 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물 |
JP3803286B2 (ja) | 2001-12-03 | 2006-08-02 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
JP2003223001A (ja) | 2002-01-31 | 2003-08-08 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP4327003B2 (ja) | 2003-07-01 | 2009-09-09 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
EP1505439A3 (en) * | 2003-07-24 | 2005-04-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and method of forming resist pattern |
JP4861767B2 (ja) * | 2005-07-26 | 2012-01-25 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
TWI403843B (zh) * | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
JP4568668B2 (ja) * | 2005-09-22 | 2010-10-27 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4881687B2 (ja) * | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
TWI479266B (zh) * | 2005-12-27 | 2015-04-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
JP5114021B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
KR101242332B1 (ko) * | 2006-10-17 | 2013-03-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 이것을 이용한 패턴 형성 방법 |
US7569326B2 (en) * | 2006-10-27 | 2009-08-04 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process |
-
2008
- 2008-07-10 KR KR1020107000605A patent/KR20100028101A/ko not_active Application Discontinuation
- 2008-07-10 WO PCT/JP2008/062524 patent/WO2009011289A1/ja active Application Filing
- 2008-07-10 JP JP2008180797A patent/JP4505522B2/ja active Active
- 2008-07-10 US US12/668,674 patent/US7955780B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11119434A (ja) * | 1997-10-09 | 1999-04-30 | Fujitsu Ltd | レジスト材料及びレジストパターンの形成方法 |
JP2004334156A (ja) * | 2002-08-29 | 2004-11-25 | Jsr Corp | 感放射線性樹脂組成物 |
WO2005085301A1 (ja) * | 2004-03-08 | 2005-09-15 | Mitsubishi Rayon Co., Ltd. | レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物 |
JP2006091762A (ja) * | 2004-09-27 | 2006-04-06 | Maruzen Petrochem Co Ltd | ポジ型感光性樹脂及び新規ジチオール化合物 |
JP2006249225A (ja) * | 2005-03-10 | 2006-09-21 | Maruzen Petrochem Co Ltd | ポジ型感光性樹脂、その製造方法及びポジ型感光性樹脂を含むレジスト組成物 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018024852A (ja) * | 2016-07-29 | 2018-02-15 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7955780B2 (en) | 2011-06-07 |
JP4505522B2 (ja) | 2010-07-21 |
US20100203451A1 (en) | 2010-08-12 |
KR20100028101A (ko) | 2010-03-11 |
JP2009042748A (ja) | 2009-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009011289A1 (ja) | ポジ型レジスト組成物およびそれを用いたパターン形成方法 | |
EP1717261A4 (en) | POLYMER COMPOUND, PHOTORESISTIC COMPOSITION WITH SUCH A POLYMER COMPOUND AND METHOD FOR FORMING A RESISTANCE STRUCTURE | |
EP2157477A4 (en) | PHOTO-LACK COMPOSITION FOR NEGATIVELY DEVELOPING AND STRUCTURE-FORMING METHODS WITH PHOTOLACK COMPOSITION | |
TW200643623A (en) | Antireflective hardmask composition and methods for using same | |
EP2196852A4 (en) | PHOTOSENSITIVE RESIN COMPOSITION OF POSITIVE TYPE, AND METHOD OF FORMING CURED FILM USING THE SAME | |
EP1698937A3 (en) | Positive resist composition and pattern-forming method using the same | |
EP1736485A4 (en) | POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD OF MAKING RESIST PATTERN | |
WO2011061501A3 (en) | Methanofullerene derivatives, photoresist composition containing it and method for forming a resist layer | |
WO2008024640A3 (en) | Biodegradable elastomeric scaffolds containing microintegrated cells | |
ATE477799T1 (de) | Substituierte pyrazolopyridine, diese enthaltende zusammensetzungen, verfahren zur herstellung davon sowie deren verwendung | |
GB0623108D0 (en) | A printable composition | |
DE602005015027D1 (de) | Glucocorticoid-mimetika, verfahren zu deren herstellung, pharmazeutische zusammensetzungen und deren verwendung | |
FR2905690B1 (fr) | Procede de fabrication d'un dispositif microfluidique. | |
EP2196854A4 (en) | COMPOSITION CONTAINING A POLYMER HAVING A NITROGENIC SYLINE GROUP FOR FORMING RESIST UNDER-LAYER FILM | |
NL2003256A1 (nl) | Optical element for a lithographic apparatus, lithographic apparatus comprising such optical element and method for making the optical element. | |
DE602006013001D1 (de) | Zusammensetzung mit verbesserter stabilität und verfahren zu ihrer herstellung | |
AR060693A1 (es) | Metodos para hacer resinas poliester en reactores de policondensacion en estado fundido de pelicula descendente | |
IL217702A0 (en) | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same | |
WO2008082942A3 (en) | High-z structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels | |
MX280211B (es) | Polimero, un metodo para producir el polimero y una mezcla de cemento que utiliza el mismo. | |
EP2194073A4 (en) | POSITIVE LENS-SENSITIVE COMPOSITION, STRUCTURAL FORMING METHOD USING THE COMPOSITION AND RESIN USED IN THIS COMPOSITION | |
WO2007053769A3 (en) | Matrix and dynamic polymer systems and compositions for microchannel separation | |
WO2012081863A3 (ko) | 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법 | |
EP3919980A4 (en) | ACTIVE PHOTOSENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERNING METHOD AND METHOD OF MAKING AN ELECTRONIC DEVICE | |
EP2545412A4 (en) | AGAINST ACTIVE RADIATION SENSITIVE OR BZW. RADIATION-SENSITIVE RESIN COMPOSITION, RESISTIVE FILM THEREFOR AND STRUCTURE-FORMING PROCESS THEREFOR |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08791072 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20107000605 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12668674 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08791072 Country of ref document: EP Kind code of ref document: A1 |