WO2009034731A1 - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

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Publication number
WO2009034731A1
WO2009034731A1 PCT/JP2008/055231 JP2008055231W WO2009034731A1 WO 2009034731 A1 WO2009034731 A1 WO 2009034731A1 JP 2008055231 W JP2008055231 W JP 2008055231W WO 2009034731 A1 WO2009034731 A1 WO 2009034731A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor layer
state imaging
solid
substrate
island
Prior art date
Application number
PCT/JP2008/055231
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English (en)
French (fr)
Inventor
Fujio Masuoka
Hiroki Nakamura
Original Assignee
Unisantis Electronics (Japan) Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics (Japan) Ltd. filed Critical Unisantis Electronics (Japan) Ltd.
Priority to EP08722595.9A priority Critical patent/EP2190018B1/en
Priority to TW097109993A priority patent/TWI443810B/zh
Priority to JP2008532522A priority patent/JP5350795B2/ja
Priority to CN2008800004414A priority patent/CN101542733B/zh
Priority to US12/268,126 priority patent/US7872287B2/en
Publication of WO2009034731A1 publication Critical patent/WO2009034731A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　１画素の表面積に対する受光部の表面積の割合が大きいイメージセンサを提供することを課題とする。 　基板上に配列された固体撮像素子を備えた固体撮像装置であって、 　前記固体撮像素子は、 　基板上に形成された信号線と、 　前記信号線の上に配置される島状半導体と、 　前記島状半導体の上部に接続された画素選択線とを備え、 　前記島状半導体は、 　前記島状半導体の下部に配置され、前記信号線に接続された第１の半導体層と、 　前記第１の半導体層の上側に隣接する第２の半導体層と、 　前記第２の半導体層に絶縁膜を介して接続されたゲートと、 　前記第２の半導体層に接続された、受光すると電荷量が変化する第３の半導体層からなる前記電荷蓄積部と、 　前記第２の半導体層と前記第３の半導体層の上側に隣接し、前記画素選択線に接続された第４の半導体層と、を備え、 　前記固体撮像素子を基板上にハニカム状に配列したことを特徴とする固体撮像装置により、上記課題を解決する。
PCT/JP2008/055231 2007-09-12 2008-03-21 固体撮像素子 WO2009034731A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08722595.9A EP2190018B1 (en) 2007-09-12 2008-03-21 Solid-state imaging element
TW097109993A TWI443810B (zh) 2007-09-12 2008-03-21 固態攝像裝置，及固態攝像元件的製造方法
JP2008532522A JP5350795B2 (ja) 2007-09-12 2008-03-21 固体撮像素子
CN2008800004414A CN101542733B (zh) 2007-09-12 2008-03-21 固体摄像元件
US12/268,126 US7872287B2 (en) 2007-09-12 2008-11-10 Solid-state imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPPCT/JP2007/067732 2007-09-12
PCT/JP2007/067732 WO2009034623A1 (ja) 2007-09-12 2007-09-12 固体撮像素子

Related Child Applications (1)

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US12/268,126 Continuation US7872287B2 (en) 2007-09-12 2008-11-10 Solid-state imaging device

Publications (1)

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WO2009034731A1 true WO2009034731A1 (ja) 2009-03-19

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PCT/JP2007/067732 WO2009034623A1 (ja) 2007-09-12 2007-09-12 固体撮像素子
PCT/JP2008/055231 WO2009034731A1 (ja) 2007-09-12 2008-03-21 固体撮像素子

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Country Status (7)

Country Link
US (1) US7872287B2 (ja)
EP (3) EP2197032B1 (ja)
JP (1) JP4793493B2 (ja)
KR (2) KR101109088B1 (ja)
CN (2) CN101855725B (ja)
TW (2) TW200913244A (ja)
WO (2) WO2009034623A1 (ja)

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JP4769910B1 (ja) * 2011-02-18 2011-09-07 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP4769911B1 (ja) * 2010-10-29 2011-09-07 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
WO2011111662A1 (ja) * 2010-03-08 2011-09-15 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP2011211161A (ja) * 2010-03-12 2011-10-20 Unisantis Electronics Japan Ltd 固体撮像装置
JP2012050055A (ja) * 2010-07-30 2012-03-08 Unisantis Electronics Singapore Pte Ltd 固体撮像装置
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
WO2013035189A1 (ja) * 2011-09-08 2013-03-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
WO2014061100A1 (ja) * 2012-10-16 2014-04-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
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US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure

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WO2009034623A1 (ja) * 2007-09-12 2009-03-19 Unisantis Electronics (Japan) Ltd. 固体撮像素子
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US8476699B2 (en) 2011-03-08 2013-07-02 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
JP5114608B2 (ja) * 2011-03-08 2013-01-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
WO2013038553A1 (ja) * 2011-09-15 2013-03-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
TW201334169A (zh) * 2012-02-10 2013-08-16 Sony Corp 攝像元件、製造裝置及方法、及攝像裝置
DE102013110695A1 (de) 2012-10-02 2014-04-03 Samsung Electronics Co., Ltd. Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben
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KR102471593B1 (ko) * 2015-06-09 2022-11-29 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법
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Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482041B2 (en) 2007-10-29 2013-07-09 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8598650B2 (en) 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8647947B2 (en) 2009-04-28 2014-02-11 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8497548B2 (en) 2009-04-28 2013-07-30 Unisantis Electronics Singapore Pte Ltd. Semiconductor device including a MOS transistor and production method therefor
US8610202B2 (en) 2009-10-01 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Semiconductor device having a surrounding gate
WO2011111662A1 (ja) * 2010-03-08 2011-09-15 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP4912513B2 (ja) * 2010-03-08 2012-04-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8575662B2 (en) 2010-03-08 2013-11-05 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high pixel density
KR101211442B1 (ko) 2010-03-08 2012-12-12 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 고체 촬상 장치
KR101220642B1 (ko) 2010-03-12 2013-01-21 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 고체 촬상 장치
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP2011211161A (ja) * 2010-03-12 2011-10-20 Unisantis Electronics Japan Ltd 固体撮像装置
US8609494B2 (en) 2010-06-09 2013-12-17 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US8486785B2 (en) 2010-06-09 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Surround gate CMOS semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
JP2012050055A (ja) * 2010-07-30 2012-03-08 Unisantis Electronics Singapore Pte Ltd 固体撮像装置
WO2012056782A1 (ja) * 2010-10-29 2012-05-03 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
WO2012056586A1 (ja) * 2010-10-29 2012-05-03 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP4769911B1 (ja) * 2010-10-29 2011-09-07 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
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KR101011518B1 (ko) 2011-02-07
TW200913244A (en) 2009-03-16
EP2190018A1 (en) 2010-05-26
EP2190018B1 (en) 2013-12-11
TWI443810B (zh) 2014-07-01
KR20090057351A (ko) 2009-06-05
KR20100065351A (ko) 2010-06-16
CN101855725A (zh) 2010-10-06
EP2190018A4 (en) 2012-01-04
KR101109088B1 (ko) 2012-01-31
EP2197032B1 (en) 2014-11-05
US7872287B2 (en) 2011-01-18
JP4793493B2 (ja) 2011-10-12
US20090065832A1 (en) 2009-03-12
TW200913237A (en) 2009-03-16
JPWO2009034623A1 (ja) 2010-12-16
EP2461363A1 (en) 2012-06-06
WO2009034623A1 (ja) 2009-03-19
CN101855725B (zh) 2013-08-21
CN101542733B (zh) 2010-09-01
EP2197032A1 (en) 2010-06-16
CN101542733A (zh) 2009-09-23

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