WO2009019813A1 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

Info

Publication number
WO2009019813A1
WO2009019813A1 PCT/JP2008/001634 JP2008001634W WO2009019813A1 WO 2009019813 A1 WO2009019813 A1 WO 2009019813A1 JP 2008001634 W JP2008001634 W JP 2008001634W WO 2009019813 A1 WO2009019813 A1 WO 2009019813A1
Authority
WO
WIPO (PCT)
Prior art keywords
element isolation
isolation portion
pixel portions
solid
imaging device
Prior art date
Application number
PCT/JP2008/001634
Other languages
English (en)
French (fr)
Inventor
Mitsuyoshi Mori
Yasuhiro Shimada
Takuma Katayama
Kenji Taniguchi
Masayuki Furuhashi
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/377,312 priority Critical patent/US8035178B2/en
Publication of WO2009019813A1 publication Critical patent/WO2009019813A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)

Abstract

　複数の画素部１２がシリコン基板１１上に形成されており、各画素部１２を構成する光電変換部１０は、シリコン基板１１内に形成された絶縁膜からなる素子分離部１３で電気的に分離されている。そして、素子分離部１３で区画された光電変換部１０において、素子分離部１３と接する辺の結晶方向が＜００－１＞方向に形成されている。これにより、素子分離部１３の界面近傍の応力に起因する暗電流を低減するとともに、画素部１２の微細化を行っても高感度を維持することができる。
PCT/JP2008/001634 2007-08-09 2008-06-24 固体撮像装置 WO2009019813A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/377,312 US8035178B2 (en) 2007-08-09 2008-06-24 Solid-state imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-208042 2007-08-09
JP2007208042 2007-08-09

Publications (1)

Publication Number Publication Date
WO2009019813A1 true WO2009019813A1 (ja) 2009-02-12

Family

ID=40341058

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001634 WO2009019813A1 (ja) 2007-08-09 2008-06-24 固体撮像装置

Country Status (3)

Country Link
US (1) US8035178B2 (ja)
JP (2) JP2009065118A (ja)
WO (1) WO2009019813A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853811B2 (en) * 2011-11-07 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor trench isolation with conformal doping
WO2014002390A1 (ja) 2012-06-28 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
KR102083402B1 (ko) 2013-02-25 2020-03-02 삼성전자주식회사 이미지 센서 및 이의 형성 방법
KR102034482B1 (ko) 2013-03-04 2019-10-21 삼성전자주식회사 이미지 센서 및 이의 형성 방법
US9462202B2 (en) * 2013-06-06 2016-10-04 Samsung Electronics Co., Ltd. Pixel arrays and imaging devices with reduced blooming, controllers and methods
JP6463159B2 (ja) * 2015-02-05 2019-01-30 キヤノン株式会社 撮像装置およびその制御方法、プログラム、並びに記憶媒体
JP2017092084A (ja) * 2015-11-02 2017-05-25 キヤノン株式会社 撮像素子及びその製造方法
KR102545170B1 (ko) 2015-12-09 2023-06-19 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2017220673A (ja) * 2017-07-24 2017-12-14 ルネサスエレクトロニクス株式会社 撮像装置の製造方法および撮像装置
JP7379230B2 (ja) * 2020-03-19 2023-11-14 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
KR20220070950A (ko) * 2020-11-23 2022-05-31 삼성전자주식회사 이미지 센서

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015586A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置およびその製造方法
JP2006222452A (ja) * 2006-04-24 2006-08-24 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2006294756A (ja) * 2005-04-07 2006-10-26 Canon Inc 半導体装置の製造方法
JP2007036202A (ja) * 2005-07-27 2007-02-08 Magnachip Semiconductor Ltd 高解像度ｃｍｏｓイメージセンサのためのスタック型ピクセル
JP2008060380A (ja) * 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358782A (en) * 1976-11-08 1978-05-26 Sony Corp Semiconductor device
JPS61114548A (ja) * 1984-11-09 1986-06-02 Res Dev Corp Of Japan 半導体素子分離帯の形成方法
US6537895B1 (en) * 2000-11-14 2003-03-25 Atmel Corporation Method of forming shallow trench isolation in a silicon wafer
JP2003318379A (ja) 2002-04-22 2003-11-07 Sony Corp 光電変換装置及びその製造方法
JP4435063B2 (ja) * 2002-06-27 2010-03-17 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
US6949445B2 (en) * 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
JP3729826B2 (ja) * 2004-01-09 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
SG119256A1 (en) * 2004-07-28 2006-02-28 Taiwan Semiconductor Mfg Semiconductor-on-insulator chip with <100> oriented transistors
JP4789463B2 (ja) 2004-12-28 2011-10-12 キヤノン株式会社 光電変換装置とその製造方法，及び撮像システム
US20060141666A1 (en) * 2004-12-29 2006-06-29 Infineon Technologies Ag Method for producing a module including an integrated circuit on a substrate and an integrated module manufactured thereby
JP4729933B2 (ja) * 2005-02-01 2011-07-20 ソニー株式会社 固体撮像装置の製造方法
JP2007115948A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd 固体撮像装置、その製造方法及びそれを用いたカメラ
JP2007227574A (ja) * 2006-02-22 2007-09-06 Fujifilm Corp 光電変換素子、固体撮像素子
JP2007273894A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 光電変換素子、固体撮像素子、及び固体撮像素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015586A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置およびその製造方法
JP2006294756A (ja) * 2005-04-07 2006-10-26 Canon Inc 半導体装置の製造方法
JP2007036202A (ja) * 2005-07-27 2007-02-08 Magnachip Semiconductor Ltd 高解像度ｃｍｏｓイメージセンサのためのスタック型ピクセル
JP2006222452A (ja) * 2006-04-24 2006-08-24 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2008060380A (ja) * 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法

Also Published As

Publication number Publication date
US20100133592A1 (en) 2010-06-03
US8035178B2 (en) 2011-10-11
JP2009065118A (ja) 2009-03-26
JP2013157639A (ja) 2013-08-15

Similar Documents

Publication Publication Date Title
WO2009019813A1 (ja) 固体撮像装置
CN104733484B (zh) 固态成像传感器、固态成像传感器的制造方法和电子设备
TWI690069B (zh) 包括垂直傳輸閘的圖像感測器
CN106549027B (zh) 包括垂直传输门的图像传感器及其制造方法
JP2008004920A5 (ja)
EP2228826A3 (en) Solid-state image pickup device and a method of manufacturing the same
WO2009034623A1 (ja) 固体撮像素子
JP2011091400A5 (ja) イメージセンサ
JP2007329434A5 (ja)
JP2012252359A5 (ja) 表示装置
JP2007201246A5 (ja)
EP2924464A3 (en) Back-illuminated distance measuring sensor and distance measuring device
JP2012015274A5 (ja)
JP2005340791A5 (ja)
TW200633200A (en) Solid-state image pickup device and method for producing the same
JP2008205256A5 (ja)
WO2011031810A3 (en) Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors
TW200516779A (en) An image pickup device and manufacturing method thereof
US9276025B2 (en) Active matrix image sensing panel and apparatus
TW201130127A (en) Solid-state imaging device, method of manufacturing same, and electronic apparatus
EP1879231A3 (en) Photoelectric conversion device and image pickup system with photoelectric conversion device
TW201212217A (en) Solid-state imaging device and electronic apparatus
US9704911B2 (en) Image sensor having vertical transfer gate for reducing noise and electronic device having the same
US20130207169A1 (en) Active matrix image sensing panel and apparatus
JP5557795B2 (ja) 固体撮像素子及び撮像装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 12377312

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08764217

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08764217

Country of ref document: EP

Kind code of ref document: A1