SG119256A1 - Semiconductor-on-insulator chip with <100> oriented transistors - Google Patents
Semiconductor-on-insulator chip with <100> oriented transistorsInfo
- Publication number
- SG119256A1 SG119256A1 SG200407553A SG200407553A SG119256A1 SG 119256 A1 SG119256 A1 SG 119256A1 SG 200407553 A SG200407553 A SG 200407553A SG 200407553 A SG200407553 A SG 200407553A SG 119256 A1 SG119256 A1 SG 119256A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor
- insulator chip
- oriented transistors
- transistors
- oriented
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/901,763 US7319258B2 (en) | 2003-10-31 | 2004-07-28 | Semiconductor-on-insulator chip with<100>-oriented transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
SG119256A1 true SG119256A1 (en) | 2006-02-28 |
Family
ID=36028017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200407553A SG119256A1 (en) | 2004-07-28 | 2004-12-21 | Semiconductor-on-insulator chip with <100> oriented transistors |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2006049895A (en) |
CN (1) | CN100477277C (en) |
SG (1) | SG119256A1 (en) |
TW (1) | TWI303862B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006019835B4 (en) * | 2006-04-28 | 2011-05-12 | Advanced Micro Devices, Inc., Sunnyvale | Transistor having a channel with tensile strain oriented along a crystallographic orientation with increased charge carrier mobility |
JP2008016475A (en) * | 2006-07-03 | 2008-01-24 | Renesas Technology Corp | Semiconductor device |
JP2009065118A (en) * | 2007-08-09 | 2009-03-26 | Panasonic Corp | Solid-state imaging device |
CN110420601B (en) * | 2019-08-02 | 2021-11-26 | 南京宁智高新材料研究院有限公司 | Quantitative treatment process through diamond anvil cell |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5139078B1 (en) * | 1969-02-28 | 1976-10-26 | ||
DE3779672T2 (en) * | 1986-03-07 | 1993-01-28 | Iizuka Kozo | METHOD FOR PRODUCING A MONOCRISTALLINE SEMICONDUCTOR LAYER. |
JPH07335511A (en) * | 1994-06-13 | 1995-12-22 | Nippon Telegr & Teleph Corp <Ntt> | Bonded wafer |
JP2002134374A (en) * | 2000-10-25 | 2002-05-10 | Mitsubishi Electric Corp | Semiconductor wafer and its manufacturing method and device |
JP4597479B2 (en) * | 2000-11-22 | 2010-12-15 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
JP3595786B2 (en) * | 2001-08-27 | 2004-12-02 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
JP2003209259A (en) * | 2002-01-17 | 2003-07-25 | Fujitsu Ltd | Method for manufacturing semiconductor device and semiconductor chip |
JP4030383B2 (en) * | 2002-08-26 | 2008-01-09 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
JP4294935B2 (en) * | 2002-10-17 | 2009-07-15 | 株式会社ルネサステクノロジ | Semiconductor device |
-
2004
- 2004-12-21 SG SG200407553A patent/SG119256A1/en unknown
-
2005
- 2005-07-27 JP JP2005217268A patent/JP2006049895A/en active Pending
- 2005-07-28 CN CNB2005100892495A patent/CN100477277C/en active Active
- 2005-07-28 TW TW94125614A patent/TWI303862B/en active
Also Published As
Publication number | Publication date |
---|---|
JP2006049895A (en) | 2006-02-16 |
CN100477277C (en) | 2009-04-08 |
TWI303862B (en) | 2008-12-01 |
CN1773727A (en) | 2006-05-17 |
TW200625539A (en) | 2006-07-16 |
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