TW200625539A - Integrated circuit, semiconductor device, SOI semiconductor device, and method of forming the same - Google Patents

Integrated circuit, semiconductor device, SOI semiconductor device, and method of forming the same

Info

Publication number
TW200625539A
TW200625539A TW094125614A TW94125614A TW200625539A TW 200625539 A TW200625539 A TW 200625539A TW 094125614 A TW094125614 A TW 094125614A TW 94125614 A TW94125614 A TW 94125614A TW 200625539 A TW200625539 A TW 200625539A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
forming
integrated circuit
same
soi
Prior art date
Application number
TW094125614A
Other languages
Chinese (zh)
Other versions
TWI303862B (en
Inventor
Fu-Liang Yang
Yee-Chia Yeo
Hung-Wei Chen
Tim Tsao
Chen-Ming Hu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/901,763 external-priority patent/US7319258B2/en
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200625539A publication Critical patent/TW200625539A/en
Application granted granted Critical
Publication of TWI303862B publication Critical patent/TWI303862B/en

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

A semiconductor-on-insulator device includes a silicon active layer with a (100) crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a (110) crystal direction. Transistors oriented on a (100) direction are formed on the silicon active layer.
TW94125614A 2004-07-28 2005-07-28 Integrated circuit, semiconductor device, soi semiconductor device,and method of forming the same TWI303862B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/901,763 US7319258B2 (en) 2003-10-31 2004-07-28 Semiconductor-on-insulator chip with<100>-oriented transistors

Publications (2)

Publication Number Publication Date
TW200625539A true TW200625539A (en) 2006-07-16
TWI303862B TWI303862B (en) 2008-12-01

Family

ID=36028017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94125614A TWI303862B (en) 2004-07-28 2005-07-28 Integrated circuit, semiconductor device, soi semiconductor device,and method of forming the same

Country Status (4)

Country Link
JP (1) JP2006049895A (en)
CN (1) CN100477277C (en)
SG (1) SG119256A1 (en)
TW (1) TWI303862B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006019835B4 (en) * 2006-04-28 2011-05-12 Advanced Micro Devices, Inc., Sunnyvale Transistor having a channel with tensile strain oriented along a crystallographic orientation with increased charge carrier mobility
JP2008016475A (en) * 2006-07-03 2008-01-24 Renesas Technology Corp Semiconductor device
JP2009065118A (en) * 2007-08-09 2009-03-26 Panasonic Corp Solid-state imaging device
CN110420601B (en) * 2019-08-02 2021-11-26 南京宁智高新材料研究院有限公司 Quantitative treatment process through diamond anvil cell

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5139078B1 (en) * 1969-02-28 1976-10-26
EP0235819B1 (en) * 1986-03-07 1992-06-10 Iizuka, Kozo Process for producing single crystal semiconductor layer
JPH07335511A (en) * 1994-06-13 1995-12-22 Nippon Telegr & Teleph Corp <Ntt> Bonded wafer
JP2002134374A (en) * 2000-10-25 2002-05-10 Mitsubishi Electric Corp Semiconductor wafer and its manufacturing method and device
WO2002043151A1 (en) * 2000-11-22 2002-05-30 Hitachi, Ltd Semiconductor device and method for fabricating the same
JP3595786B2 (en) * 2001-08-27 2004-12-02 松下電器産業株式会社 Method for manufacturing semiconductor device
JP2003209259A (en) * 2002-01-17 2003-07-25 Fujitsu Ltd Method for manufacturing semiconductor device and semiconductor chip
JP4030383B2 (en) * 2002-08-26 2008-01-09 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
JP4294935B2 (en) * 2002-10-17 2009-07-15 株式会社ルネサステクノロジ Semiconductor device

Also Published As

Publication number Publication date
CN100477277C (en) 2009-04-08
JP2006049895A (en) 2006-02-16
SG119256A1 (en) 2006-02-28
CN1773727A (en) 2006-05-17
TWI303862B (en) 2008-12-01

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