ATE415705T1 - Bildsensor mit tiefer grabenisolation - Google Patents

Bildsensor mit tiefer grabenisolation

Info

Publication number
ATE415705T1
ATE415705T1 AT06250392T AT06250392T ATE415705T1 AT E415705 T1 ATE415705 T1 AT E415705T1 AT 06250392 T AT06250392 T AT 06250392T AT 06250392 T AT06250392 T AT 06250392T AT E415705 T1 ATE415705 T1 AT E415705T1
Authority
AT
Austria
Prior art keywords
trench isolation
deep trench
image sensor
semiconductor substrate
epitaxial layer
Prior art date
Application number
AT06250392T
Other languages
English (en)
Inventor
Howard E Rhodes
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Application granted granted Critical
Publication of ATE415705T1 publication Critical patent/ATE415705T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT06250392T 2005-02-14 2006-01-25 Bildsensor mit tiefer grabenisolation ATE415705T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/058,055 US20060180885A1 (en) 2005-02-14 2005-02-14 Image sensor using deep trench isolation

Publications (1)

Publication Number Publication Date
ATE415705T1 true ATE415705T1 (de) 2008-12-15

Family

ID=36337480

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06250392T ATE415705T1 (de) 2005-02-14 2006-01-25 Bildsensor mit tiefer grabenisolation

Country Status (6)

Country Link
US (1) US20060180885A1 (de)
EP (1) EP1691418B1 (de)
CN (1) CN1832187A (de)
AT (1) ATE415705T1 (de)
DE (1) DE602006003779D1 (de)
TW (1) TW200633196A (de)

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JP2012124299A (ja) * 2010-12-08 2012-06-28 Toshiba Corp 裏面照射型固体撮像装置及びその製造方法
JP2014500633A (ja) 2010-12-21 2014-01-09 サイオニクス、インク． 基板損傷の少ない半導体素子および関連方法
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US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
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US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20130119193A (ko) * 2012-04-23 2013-10-31 주식회사 동부하이텍 후면 수광 이미지 센서와 그 제조방법
US8686527B2 (en) * 2012-06-22 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Porous Si as CMOS image sensor ARC layer
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
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US9293495B2 (en) 2014-05-05 2016-03-22 Semiconductor Components Industries, Llc Imaging circuitry with robust scribe line structures
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CN107039468B (zh) 2015-08-06 2020-10-23 联华电子股份有限公司 影像感测器及其制作方法
KR20170040468A (ko) * 2015-10-05 2017-04-13 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
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CN105895514A (zh) * 2016-04-21 2016-08-24 格科微电子（上海）有限公司 图像传感器芯片的形成方法
CN108573986A (zh) * 2017-03-14 2018-09-25 哈尔滨工大华生电子有限公司 一种背照式宽动态范围cmos图像传感器的制作方法
US10181490B2 (en) * 2017-04-03 2019-01-15 Omnivision Technologies, Inc. Cross talk reduction for high dynamic range image sensors
KR20190011977A (ko) * 2017-07-26 2019-02-08 주식회사 디비하이텍 후면 조사형 이미지 센서 및 그 제조 방법
EP3460848A1 (de) 2017-09-26 2019-03-27 Thomson Licensing Bildsensor mit pixeln zur verhinderung oder verringerung des nebensprecheffekts
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Also Published As

Publication number Publication date
EP1691418A1 (de) 2006-08-16
EP1691418B1 (de) 2008-11-26
US20060180885A1 (en) 2006-08-17
DE602006003779D1 (de) 2009-01-08
CN1832187A (zh) 2006-09-13
TW200633196A (en) 2006-09-16

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