ATE415705T1 - Bildsensor mit tiefer grabenisolation - Google Patents

Bildsensor mit tiefer grabenisolation

Info

Publication number
ATE415705T1
ATE415705T1 AT06250392T AT06250392T ATE415705T1 AT E415705 T1 ATE415705 T1 AT E415705T1 AT 06250392 T AT06250392 T AT 06250392T AT 06250392 T AT06250392 T AT 06250392T AT E415705 T1 ATE415705 T1 AT E415705T1
Authority
AT
Austria
Prior art keywords
trench isolation
deep trench
image sensor
semiconductor substrate
epitaxial layer
Prior art date
Application number
AT06250392T
Other languages
English (en)
Inventor
Howard E Rhodes
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Application granted granted Critical
Publication of ATE415705T1 publication Critical patent/ATE415705T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT06250392T 2005-02-14 2006-01-25 Bildsensor mit tiefer grabenisolation ATE415705T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/058,055 US20060180885A1 (en) 2005-02-14 2005-02-14 Image sensor using deep trench isolation

Publications (1)

Publication Number Publication Date
ATE415705T1 true ATE415705T1 (de) 2008-12-15

Family

ID=36337480

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06250392T ATE415705T1 (de) 2005-02-14 2006-01-25 Bildsensor mit tiefer grabenisolation

Country Status (6)

Country Link
US (1) US20060180885A1 (de)
EP (1) EP1691418B1 (de)
CN (1) CN1832187A (de)
AT (1) ATE415705T1 (de)
DE (1) DE602006003779D1 (de)
TW (1) TW200633196A (de)

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Also Published As

Publication number Publication date
TW200633196A (en) 2006-09-16
CN1832187A (zh) 2006-09-13
US20060180885A1 (en) 2006-08-17
EP1691418A1 (de) 2006-08-16
DE602006003779D1 (de) 2009-01-08
EP1691418B1 (de) 2008-11-26

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