DE60318168D1 - Bildsensor mit größeren Mikrolinsen in den Randbereichen - Google Patents

Bildsensor mit größeren Mikrolinsen in den Randbereichen

Info

Publication number
DE60318168D1
DE60318168D1 DE60318168T DE60318168T DE60318168D1 DE 60318168 D1 DE60318168 D1 DE 60318168D1 DE 60318168 T DE60318168 T DE 60318168T DE 60318168 T DE60318168 T DE 60318168T DE 60318168 D1 DE60318168 D1 DE 60318168D1
Authority
DE
Germany
Prior art keywords
pixels
image sensor
micro
lenses
edge areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60318168T
Other languages
English (en)
Other versions
DE60318168T2 (de
Inventor
Katsumi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision International Holding Ltd
Original Assignee
Omnivision International Holding Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision International Holding Ltd filed Critical Omnivision International Holding Ltd
Application granted granted Critical
Publication of DE60318168D1 publication Critical patent/DE60318168D1/de
Publication of DE60318168T2 publication Critical patent/DE60318168T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60318168T 2002-10-25 2003-10-23 Bildsensor mit größeren Mikrolinsen in den Randbereichen Expired - Lifetime DE60318168T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US280854 2002-10-25
US10/280,854 US6638786B2 (en) 2002-10-25 2002-10-25 Image sensor having large micro-lenses at the peripheral regions

Publications (2)

Publication Number Publication Date
DE60318168D1 true DE60318168D1 (de) 2008-01-31
DE60318168T2 DE60318168T2 (de) 2008-12-04

Family

ID=23074906

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60318168T Expired - Lifetime DE60318168T2 (de) 2002-10-25 2003-10-23 Bildsensor mit größeren Mikrolinsen in den Randbereichen

Country Status (6)

Country Link
US (2) US6638786B2 (de)
EP (1) EP1414072B1 (de)
CN (2) CN101399277B (de)
AT (1) ATE381783T1 (de)
DE (1) DE60318168T2 (de)
TW (1) TWI274425B (de)

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US7902618B2 (en) * 2008-11-17 2011-03-08 Omni Vision Technologies, Inc. Backside illuminated imaging sensor with improved angular response
US8227884B2 (en) 2009-11-04 2012-07-24 Omnivision Technologies, Inc. Photodetector array having array of discrete electron repulsive elements
US20110101201A1 (en) * 2009-11-04 2011-05-05 Vincent Venezia Photodetector Array Having Electron Lens
US8602308B2 (en) * 2011-12-22 2013-12-10 Symbol Technologies, Inc. Imaging device having light field sensor
JP6141024B2 (ja) * 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
US9398272B2 (en) * 2012-11-07 2016-07-19 Google Inc. Low-profile lens array camera
US9247121B2 (en) * 2013-04-25 2016-01-26 Ability Enterprise Co., Ltd. Image sensor, electric device using the same and focusing method of the electric device
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US9467633B2 (en) 2015-02-27 2016-10-11 Semiconductor Components Industries, Llc High dynamic range imaging systems having differential photodiode exposures
CN104810379B (zh) * 2015-05-05 2019-01-08 苏州晶方半导体科技股份有限公司 影像传感器
CN106488148B (zh) * 2016-11-01 2019-09-17 首都师范大学 一种超分辨率图像传感器及其构造方法
CN107105141B (zh) 2017-04-28 2019-06-28 Oppo广东移动通信有限公司 图像传感器、图像处理方法、成像装置和移动终端
CN107040724B (zh) 2017-04-28 2020-05-15 Oppo广东移动通信有限公司 双核对焦图像传感器及其对焦控制方法和成像装置
CN107135340A (zh) 2017-04-28 2017-09-05 广东欧珀移动通信有限公司 图像传感器、对焦控制方法、成像装置和移动终端
KR102537320B1 (ko) 2018-02-19 2023-05-30 에스케이하이닉스 주식회사 서로 다른 주기로 배열된 마이크로 렌즈들을 갖는 이미지 센서
KR102662032B1 (ko) 2019-06-19 2024-05-03 삼성전자주식회사 이미지 센서 및 이미지 센서를 포함하는 전자 장치
CN110244426B (zh) * 2019-07-01 2024-10-29 达科为（深圳）医疗设备有限公司 一种物镜组件和阵列物镜光学系统的固定支架
KR20210056754A (ko) 2019-11-11 2021-05-20 에스케이하이닉스 주식회사 이미지 센서
CN111641762B (zh) * 2020-05-28 2021-11-02 维沃移动通信有限公司 摄像模组及电子设备
CN112600994B (zh) * 2020-12-02 2023-04-07 达闼机器人股份有限公司 物体探测装置、方法、存储介质和电子设备
CN113096041B (zh) * 2021-04-08 2023-03-24 杭州海康消防科技有限公司 图像校正方法及装置
CN113869118A (zh) * 2021-08-25 2021-12-31 北京极豪科技有限公司 光学传感器、指纹识别模组以及电子设备
CN117826286B (zh) * 2024-03-05 2024-05-28 苏州苏纳光电有限公司 阵列式级联微透镜组的制备方法、阵列化曝光装置及应用

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Also Published As

Publication number Publication date
US20030042490A1 (en) 2003-03-06
US20040082093A1 (en) 2004-04-29
EP1414072B1 (de) 2007-12-19
EP1414072A3 (de) 2005-08-03
TW200514269A (en) 2005-04-16
DE60318168T2 (de) 2008-12-04
CN101399277A (zh) 2009-04-01
CN101399277B (zh) 2011-02-23
ATE381783T1 (de) 2008-01-15
EP1414072A2 (de) 2004-04-28
US6638786B2 (en) 2003-10-28
CN100383978C (zh) 2008-04-23
TWI274425B (en) 2007-02-21
CN1501507A (zh) 2004-06-02

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