DE60227027D1 - CMOS Bildaufnehmer - Google Patents

CMOS Bildaufnehmer

Info

Publication number
DE60227027D1
DE60227027D1 DE60227027T DE60227027T DE60227027D1 DE 60227027 D1 DE60227027 D1 DE 60227027D1 DE 60227027 T DE60227027 T DE 60227027T DE 60227027 T DE60227027 T DE 60227027T DE 60227027 D1 DE60227027 D1 DE 60227027D1
Authority
DE
Germany
Prior art keywords
layer
signal processing
light receiving
color filter
processing circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60227027T
Other languages
English (en)
Inventor
Susumu Yamaguchi
Kazuo Tansho
Yasushi Hoshino
Masafumi Mizukami
Oh-Bong Kwon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MagnaChip Semiconductor Ltd
Original Assignee
MagnaChip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MagnaChip Semiconductor Ltd filed Critical MagnaChip Semiconductor Ltd
Application granted granted Critical
Publication of DE60227027D1 publication Critical patent/DE60227027D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/022—Mountings, adjusting means, or light-tight connections, for optical elements for lenses lens and mount having complementary engagement means, e.g. screw/thread
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Steroid Compounds (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
DE60227027T 2001-05-31 2002-05-21 CMOS Bildaufnehmer Expired - Lifetime DE60227027D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001164020 2001-05-31

Publications (1)

Publication Number Publication Date
DE60227027D1 true DE60227027D1 (de) 2008-07-24

Family

ID=19006887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60227027T Expired - Lifetime DE60227027D1 (de) 2001-05-31 2002-05-21 CMOS Bildaufnehmer

Country Status (7)

Country Link
US (1) US6727487B2 (de)
EP (1) EP1263055B1 (de)
KR (1) KR100596104B1 (de)
CN (1) CN1226790C (de)
AT (1) ATE398337T1 (de)
DE (1) DE60227027D1 (de)
TW (1) TW540157B (de)

Families Citing this family (23)

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JP4098237B2 (ja) * 2001-09-11 2008-06-11 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー カラーフォトセンサ
US7662094B2 (en) 2002-05-14 2010-02-16 Given Imaging Ltd. Optical head assembly with dome, and device for use thereof
US6946715B2 (en) * 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
US20040061799A1 (en) * 2002-09-27 2004-04-01 Konica Corporation Image pickup device and portable terminal equipped therewith
US7535509B2 (en) * 2003-08-22 2009-05-19 Konica Minolta Opto, Inc. Transparent member in a solid-state image pick-up apparatus supported through use of micro-lenses larger in size than pixel micro-lenses and a method for producing the micro-lenses and transparent member
FR2860644B1 (fr) * 2003-10-06 2006-03-03 St Microelectronics Sa Composant, plaque et boitier semi-conducteur a capteur optique
US7821564B2 (en) * 2003-12-30 2010-10-26 Given Imaging Ltd. Assembly for aligning an optical system
US7372497B2 (en) * 2004-04-28 2008-05-13 Taiwan Semiconductor Manufacturing Company Effective method to improve sub-micron color filter sensitivity
US7768574B2 (en) * 2004-05-04 2010-08-03 Tessera, Inc. Compact lens turret assembly
US20060109366A1 (en) * 2004-05-04 2006-05-25 Tessera, Inc. Compact lens turret assembly
JP2005347416A (ja) * 2004-06-01 2005-12-15 Sharp Corp 固体撮像装置、半導体ウエハ及びカメラモジュール
KR100629679B1 (ko) 2004-07-01 2006-09-29 삼성전자주식회사 열전 냉각 소자를 갖는 반도체 칩 패키지
DE202004011854U1 (de) * 2004-07-28 2004-11-04 Microelectronic Packaging Dresden Gmbh Image-Modul
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
US9320417B2 (en) 2005-12-29 2016-04-26 Given Imaging Ltd. In-vivo optical imaging device with backscatter blocking
KR100868630B1 (ko) * 2006-12-11 2008-11-13 동부일렉트로닉스 주식회사 마이크로 렌즈 형성용 패턴 마스크, 이미지 센서 및 이의제조 방법
US20090283665A1 (en) * 2008-05-13 2009-11-19 Eastman Kodak Company Image sensor with an aligned optical assembly
JP5553707B2 (ja) * 2009-08-21 2014-07-16 株式会社半導体エネルギー研究所 光検出装置
US8461567B2 (en) * 2010-06-24 2013-06-11 Nokia Corporation Apparatus and method for sensing photons
JP2014123014A (ja) * 2012-12-21 2014-07-03 Casio Comput Co Ltd 光源装置、プロジェクタ
US9917991B2 (en) * 2014-10-24 2018-03-13 Apple Inc. Camera actuator
TWI613478B (zh) * 2016-09-12 2018-02-01 台睿精工股份有限公司 單鏡頭機械零傾角的調整方法
CN109115250A (zh) * 2018-08-08 2019-01-01 珠海格力电器股份有限公司 感光器件的阵列结构和光电编码器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321249A (en) * 1991-10-31 1994-06-14 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and method of manufacturing the same
KR950002410A (ko) * 1993-06-30 1995-01-04 김광호 고체 촬상 장치
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
EP0948059A1 (de) * 1998-02-05 1999-10-06 Asulab S.A. Positionierungsmittel in einem mikroelektronischen Bauelement und Bildsensor mit Verwendung dieses Bauelements
KR20000050478A (ko) * 1999-01-11 2000-08-05 윤종용 고체 촬상 소자 이미지 센서 모듈 및 그 조립방법
US6137634A (en) * 1999-02-01 2000-10-24 Intel Corporation Microlens array
KR100359768B1 (ko) * 1999-03-18 2002-11-07 주식회사 하이닉스반도체 고체 촬상 소자 및 그 제조방법
FR2798226B1 (fr) * 1999-09-02 2002-04-05 St Microelectronics Sa Procede de mise en boitier d'une puce de semi-conducteur contenant des capteurs et boitier obtenu
US6171885B1 (en) * 1999-10-12 2001-01-09 Taiwan Semiconductor Manufacturing Company High efficiency color filter process for semiconductor array imaging devices
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6395576B1 (en) * 2000-06-14 2002-05-28 Taiwan Semiconductor Manufacturing Company High efficiency color filter process to improve color balance in semiconductor array imaging devices
TW523924B (en) * 2001-01-12 2003-03-11 Konishiroku Photo Ind Image pickup device and image pickup lens

Also Published As

Publication number Publication date
EP1263055A2 (de) 2002-12-04
US20020195546A1 (en) 2002-12-26
KR20020091792A (ko) 2002-12-06
EP1263055B1 (de) 2008-06-11
ATE398337T1 (de) 2008-07-15
US6727487B2 (en) 2004-04-27
TW540157B (en) 2003-07-01
CN1226790C (zh) 2005-11-09
EP1263055A3 (de) 2005-03-30
KR100596104B1 (ko) 2006-07-05
CN1389928A (zh) 2003-01-08

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