KR100596104B1 - Cmos형 이미지 센서 - Google Patents
Cmos형 이미지 센서 Download PDFInfo
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- KR100596104B1 KR100596104B1 KR1020020029553A KR20020029553A KR100596104B1 KR 100596104 B1 KR100596104 B1 KR 100596104B1 KR 1020020029553 A KR1020020029553 A KR 1020020029553A KR 20020029553 A KR20020029553 A KR 20020029553A KR 100596104 B1 KR100596104 B1 KR 100596104B1
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- signal processing
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- 238000012545 processing Methods 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
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- 238000000034 method Methods 0.000 claims description 10
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- 229920003002 synthetic resin Polymers 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
- G02B7/022—Mountings, adjusting means, or light-tight connections, for optical elements for lenses lens and mount having complementary engagement means, e.g. screw/thread
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Steroid Compounds (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Abstract
Description
Claims (8)
- 광전 변환기로서의 수광부와 신호 처리 회로를 포함하는 CMOS형 이미지 센서에 있어서,상기 수광부의 상부 표면에 제공되는 칼라 필터 어레이 및 그 위에 적층된 마이크로렌즈 어레이(microlens array)를 포함하는 제1 층; 및상기 신호 처리 회로의 상부 표면 중 적어도 일부 영역에 제공되는 칼라 필터 및 마이크로렌즈 어레이 중 적어도 하나를 포함하는 제2 층을 포함하는 것을 특징으로 하는 CMOS형 이미지 센서.
- 제1항에 있어서,상기 신호 처리 회로는 디지털 신호 처리 회로를 포함하고, 상기 제2 층은 상기 디지털 신호 처리 회로의 상부 표면 영역에 형성되는 것을 특징으로 하는 CMOS형 이미지 센서.
- 제1항 또는 제2항에 있어서,상기 제2 층은 청색, 적색, 및 녹색 칼라 필터 중 하나를 포함하는 칼라 필터를 포함하는 것을 특징으로 하는 CMOS형 이미지 센서.
- 제1항 또는 제2항에 있어서,상기 제2 층은 그 위에 광학 렌즈를 지지하기 위한 렌즈 지지 부재를 지지할 수 있게 하는 구조를 포함하는 것을 특징으로 하는 CMOS형 이미지 센서.
- 제1항 또는 제2항에 있어서,상기 수광부는 반도체 칩의 대략 중심 영역에 형성되고, 상기 신호 처리 회로는 상기 동일한 반도체 칩에서 그 주변 영역에 형성되는 것을 특징으로 하는 CMOS형 이미지 센서.
- 제5항에 있어서,상기 제2 층이 제공되는 영역은 상기 수광부를 둘러싼 적어도 3개의 분리된 작은 영역을 포함하는 것을 특징으로 하는 CMOS형 이미지 센서.
- 제2항에 있어서,상기 제2 층은 상기 디지털 신호 처리 회로의 상부 표면을 거의 전부 덮도록 제공되는 것을 특징으로 하는 CMOS형 이미지 센서.
- 2차원으로 배치된 다수의 픽셀을 포함하고, 이들 각각이 수광량에 대응하는 신호 전하를 발생하도록 광전 변환 소자 및 CMOS 트랜지스터를 포함하는 광전 변환기로서의 수광부;이미지 신호를 형성하도록 각 픽셀로부터 얻어진 신호 전하를 처리하는 신호 처리 회로;상기 수광부의 상부 표면에 제공되는 칼라 필터 어레이 및 그 위에 적층된 마이크로렌즈 어레이를 포함하는 제1 층; 및상기 신호 처리 회로의 상부 표면 중 적어도 일부 영역에 제공되는 칼라 필터 및 마이크로렌즈 어레이 중 적어도 하나를 포함하는 제2 층을 포함하는 것을 특징으로 하는 CMOS형 이미지 센서.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00164020 | 2001-05-31 | ||
JP2001164020 | 2001-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020091792A KR20020091792A (ko) | 2002-12-06 |
KR100596104B1 true KR100596104B1 (ko) | 2006-07-05 |
Family
ID=19006887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020029553A KR100596104B1 (ko) | 2001-05-31 | 2002-05-28 | Cmos형 이미지 센서 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6727487B2 (ko) |
EP (1) | EP1263055B1 (ko) |
KR (1) | KR100596104B1 (ko) |
CN (1) | CN1226790C (ko) |
AT (1) | ATE398337T1 (ko) |
DE (1) | DE60227027D1 (ko) |
TW (1) | TW540157B (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1430281A1 (en) * | 2001-09-11 | 2004-06-23 | LumiLeds Lighting U.S., LLC | Color photosensor |
US7662094B2 (en) | 2002-05-14 | 2010-02-16 | Given Imaging Ltd. | Optical head assembly with dome, and device for use thereof |
US6946715B2 (en) * | 2003-02-19 | 2005-09-20 | Micron Technology, Inc. | CMOS image sensor and method of fabrication |
US20040061799A1 (en) * | 2002-09-27 | 2004-04-01 | Konica Corporation | Image pickup device and portable terminal equipped therewith |
US7535509B2 (en) * | 2003-08-22 | 2009-05-19 | Konica Minolta Opto, Inc. | Transparent member in a solid-state image pick-up apparatus supported through use of micro-lenses larger in size than pixel micro-lenses and a method for producing the micro-lenses and transparent member |
FR2860644B1 (fr) * | 2003-10-06 | 2006-03-03 | St Microelectronics Sa | Composant, plaque et boitier semi-conducteur a capteur optique |
US7821564B2 (en) * | 2003-12-30 | 2010-10-26 | Given Imaging Ltd. | Assembly for aligning an optical system |
US7372497B2 (en) * | 2004-04-28 | 2008-05-13 | Taiwan Semiconductor Manufacturing Company | Effective method to improve sub-micron color filter sensitivity |
US7768574B2 (en) * | 2004-05-04 | 2010-08-03 | Tessera, Inc. | Compact lens turret assembly |
US20060109366A1 (en) * | 2004-05-04 | 2006-05-25 | Tessera, Inc. | Compact lens turret assembly |
JP2005347416A (ja) * | 2004-06-01 | 2005-12-15 | Sharp Corp | 固体撮像装置、半導体ウエハ及びカメラモジュール |
KR100629679B1 (ko) | 2004-07-01 | 2006-09-29 | 삼성전자주식회사 | 열전 냉각 소자를 갖는 반도체 칩 패키지 |
DE202004011854U1 (de) * | 2004-07-28 | 2004-11-04 | Microelectronic Packaging Dresden Gmbh | Image-Modul |
US7645635B2 (en) * | 2004-08-16 | 2010-01-12 | Micron Technology, Inc. | Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages |
US9320417B2 (en) | 2005-12-29 | 2016-04-26 | Given Imaging Ltd. | In-vivo optical imaging device with backscatter blocking |
KR100868630B1 (ko) * | 2006-12-11 | 2008-11-13 | 동부일렉트로닉스 주식회사 | 마이크로 렌즈 형성용 패턴 마스크, 이미지 센서 및 이의제조 방법 |
US20090283665A1 (en) * | 2008-05-13 | 2009-11-19 | Eastman Kodak Company | Image sensor with an aligned optical assembly |
JP5553707B2 (ja) * | 2009-08-21 | 2014-07-16 | 株式会社半導体エネルギー研究所 | 光検出装置 |
US8461567B2 (en) * | 2010-06-24 | 2013-06-11 | Nokia Corporation | Apparatus and method for sensing photons |
JP2014123014A (ja) * | 2012-12-21 | 2014-07-03 | Casio Comput Co Ltd | 光源装置、プロジェクタ |
US9917991B2 (en) * | 2014-10-24 | 2018-03-13 | Apple Inc. | Camera actuator |
TWI613478B (zh) * | 2016-09-12 | 2018-02-01 | 台睿精工股份有限公司 | 單鏡頭機械零傾角的調整方法 |
CN109115250A (zh) * | 2018-08-08 | 2019-01-01 | 珠海格力电器股份有限公司 | 感光器件的阵列结构和光电编码器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US5321249A (en) * | 1991-10-31 | 1994-06-14 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
KR20000050478A (ko) * | 1999-01-11 | 2000-08-05 | 윤종용 | 고체 촬상 소자 이미지 센서 모듈 및 그 조립방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR950002410A (ko) * | 1993-06-30 | 1995-01-04 | 김광호 | 고체 촬상 장치 |
JPH10270672A (ja) * | 1997-03-25 | 1998-10-09 | Sony Corp | 固体撮像素子 |
EP0948059A1 (fr) * | 1998-02-05 | 1999-10-06 | Asulab S.A. | Moyens de positionnement pour un dispositif microélectronique et appareil de prise de vues muni d'un tel dispositif |
US6137634A (en) * | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
KR100359768B1 (ko) * | 1999-03-18 | 2002-11-07 | 주식회사 하이닉스반도체 | 고체 촬상 소자 및 그 제조방법 |
FR2798226B1 (fr) * | 1999-09-02 | 2002-04-05 | St Microelectronics Sa | Procede de mise en boitier d'une puce de semi-conducteur contenant des capteurs et boitier obtenu |
US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
JP3840058B2 (ja) * | 2000-04-07 | 2006-11-01 | キヤノン株式会社 | マイクロレンズ、固体撮像装置及びそれらの製造方法 |
US6395576B1 (en) * | 2000-06-14 | 2002-05-28 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process to improve color balance in semiconductor array imaging devices |
TW523924B (en) * | 2001-01-12 | 2003-03-11 | Konishiroku Photo Ind | Image pickup device and image pickup lens |
-
2002
- 2002-05-20 TW TW091110530A patent/TW540157B/zh not_active IP Right Cessation
- 2002-05-21 AT AT02253569T patent/ATE398337T1/de not_active IP Right Cessation
- 2002-05-21 DE DE60227027T patent/DE60227027D1/de not_active Expired - Lifetime
- 2002-05-21 EP EP02253569A patent/EP1263055B1/en not_active Expired - Lifetime
- 2002-05-22 CN CNB021202958A patent/CN1226790C/zh not_active Expired - Lifetime
- 2002-05-28 KR KR1020020029553A patent/KR100596104B1/ko active IP Right Grant
- 2002-05-29 US US10/156,017 patent/US6727487B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5321249A (en) * | 1991-10-31 | 1994-06-14 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
KR20000050478A (ko) * | 1999-01-11 | 2000-08-05 | 윤종용 | 고체 촬상 소자 이미지 센서 모듈 및 그 조립방법 |
Also Published As
Publication number | Publication date |
---|---|
US6727487B2 (en) | 2004-04-27 |
CN1226790C (zh) | 2005-11-09 |
TW540157B (en) | 2003-07-01 |
DE60227027D1 (de) | 2008-07-24 |
EP1263055A2 (en) | 2002-12-04 |
US20020195546A1 (en) | 2002-12-26 |
EP1263055A3 (en) | 2005-03-30 |
CN1389928A (zh) | 2003-01-08 |
ATE398337T1 (de) | 2008-07-15 |
KR20020091792A (ko) | 2002-12-06 |
EP1263055B1 (en) | 2008-06-11 |
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