WO2008153125A1 - 光半導体素子用封止剤及び光半導体素子 - Google Patents

光半導体素子用封止剤及び光半導体素子 Download PDF

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Publication number
WO2008153125A1
WO2008153125A1 PCT/JP2008/060839 JP2008060839W WO2008153125A1 WO 2008153125 A1 WO2008153125 A1 WO 2008153125A1 JP 2008060839 W JP2008060839 W JP 2008060839W WO 2008153125 A1 WO2008153125 A1 WO 2008153125A1
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WIPO (PCT)
Prior art keywords
semiconductor element
optical semiconductor
rpm
viscosity
sealing agent
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PCT/JP2008/060839
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English (en)
French (fr)
Inventor
Mitsuru Tanikawa
Takashi Watanabe
Takashi Nishimura
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Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to CN200880020001A priority Critical patent/CN101679613A/zh
Priority to JP2008529395A priority patent/JP4452755B2/ja
Priority to EP08777200A priority patent/EP2159242A1/en
Priority to US12/452,058 priority patent/US8084530B2/en
Publication of WO2008153125A1 publication Critical patent/WO2008153125A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
    • C08L83/12—Block- or graft-copolymers containing polysiloxane sequences containing polyether sequences
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

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  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Polymers & Plastics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)

Abstract

　本発明は、透明性、耐熱性、耐光性、密着性に優れ、光半導体素子の発光素子を封止した際の封止剤の形状を安定的に制御するとともに、蛍光体の沈降を防止することが可能な光半導体用封止剤を提供することを目的とする。また、該光半導体用封止剤を用いてなる光半導体素子を提供することを目的とする。 本発明は、分子内に環状エーテル含有基を有するシリコーン樹脂と、前記環状エーテル含有基と反応する熱硬化剤と、酸化ケイ素微粒子とを含有し、Ｅ型粘度計を用いた２５°Cにおける５ｒｐｍの粘度が５００～１万ｍＰａ・ｓであり、Ｅ型粘度計を用いた２５°Cにおける１ｒｐｍの粘度を１０ｒｐｍ粘度で除する（１ｒｐｍの粘度／１０ｒｐｍの粘度）ことで算出されるチクソ値が１．２～２．５であり、かつ、パラレルプレート型レオメーターを用いた２５°Cから硬化温度までの温度領域における１ｓ－１の最低粘度が１００ｍＰａ・ｓ以上である光半導体素子用封止剤である。
PCT/JP2008/060839 2007-06-15 2008-06-13 光半導体素子用封止剤及び光半導体素子 WO2008153125A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880020001A CN101679613A (zh) 2007-06-15 2008-06-13 光半导体元件用密封剂及光半导体元件
JP2008529395A JP4452755B2 (ja) 2007-06-15 2008-06-13 光半導体素子用封止剤及び光半導体素子
EP08777200A EP2159242A1 (en) 2007-06-15 2008-06-13 Sealing agent for optical semiconductor element, and optical semiconductor element
US12/452,058 US8084530B2 (en) 2007-06-15 2008-06-13 Sealing agent for optical semiconductor element, and optical semiconductor element

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007158591 2007-06-15
JP2007-158591 2007-06-15
JP2007-186080 2007-07-17
JP2007186080 2007-07-17
JP2007259074 2007-10-02
JP2007-259074 2007-10-02

Publications (1)

Publication Number Publication Date
WO2008153125A1 true WO2008153125A1 (ja) 2008-12-18

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PCT/JP2008/060839 WO2008153125A1 (ja) 2007-06-15 2008-06-13 光半導体素子用封止剤及び光半導体素子

Country Status (7)

Country Link
US (1) US8084530B2 (ja)
EP (1) EP2159242A1 (ja)
JP (1) JP4452755B2 (ja)
KR (1) KR20100048996A (ja)
CN (1) CN101679613A (ja)
TW (1) TW200906886A (ja)
WO (1) WO2008153125A1 (ja)

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JP2009167361A (ja) * 2008-01-21 2009-07-30 Nitto Denko Corp 光半導体素子封止用樹脂組成物の製造方法
JP2012156214A (ja) * 2011-01-24 2012-08-16 Nichia Chem Ind Ltd 発光装置
JP2013256622A (ja) * 2012-06-14 2013-12-26 Jsr Corp 蛍光体粒子含有組成物、蛍光体粒子含有膜および光半導体装置
JP2014084332A (ja) * 2012-10-19 2014-05-12 Daicel Corp 硬化性エポキシ樹脂組成物及びその硬化物、並びに光半導体装置
US9044135B2 (en) 2011-06-16 2015-06-02 Kabushiki Kaisha Toshiba Endoscope apparatus and electronic apparatus
JP2016102206A (ja) * 2014-11-12 2016-06-02 株式会社スリーボンド エポキシ樹脂組成物
JP2017125212A (ja) * 2017-04-10 2017-07-20 株式会社ダイセル 硬化性エポキシ樹脂組成物及びその硬化物、並びに光半導体装置
JP2018044157A (ja) * 2016-09-07 2018-03-22 住友化学株式会社 波長変換材料含有縮合型シリコーン組成物の製造方法及び波長変換シートの製造方法

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EP2375462A1 (en) * 2010-04-08 2011-10-12 Samsung LED Co., Ltd. Light emitting diode package and method of fabricating the same
JP2012019062A (ja) * 2010-07-08 2012-01-26 Shin Etsu Chem Co Ltd 発光半導体装置、実装基板及びそれらの製造方法
JP4762374B1 (ja) * 2011-02-14 2011-08-31 積水化学工業株式会社 感光性組成物及びプリント配線板
KR101152317B1 (ko) * 2011-02-16 2012-06-11 광전자정밀주식회사 전극체 부착장치
KR101518104B1 (ko) * 2011-06-17 2015-05-06 주식회사 엘지화학 경화성 조성물
CN103443698B (zh) * 2011-10-20 2017-03-15 积水化学工业株式会社 液晶滴下工艺用密封剂、上下导通材料、以及液晶显示元件
DE102012103159A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Strahlung emittierendes Bauelement, transparentes Material und Füllstoffpartikel sowie deren Herstellungsverfahren
JP5987221B2 (ja) * 2012-07-27 2016-09-07 エルジー・ケム・リミテッド 硬化性組成物
US9231168B2 (en) 2013-05-02 2016-01-05 Industrial Technology Research Institute Light emitting diode package structure
US10033464B2 (en) * 2013-05-28 2018-07-24 Stmicroelectronics S.R.L. Optoelectronic device having improved optical coupling
JPWO2015056590A1 (ja) * 2013-10-15 2017-03-09 シャープ株式会社 実装基板、発光装置及び発光装置の製造方法
WO2015178186A1 (ja) * 2014-05-20 2015-11-26 積水化学工業株式会社 有機エレクトロルミネッセンス表示素子用封止剤
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US10361352B1 (en) * 2018-03-22 2019-07-23 Excellence Opto, Inc. High heat dissipation light emitting diode package structure having at least two light cups and lateral light emission
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009167361A (ja) * 2008-01-21 2009-07-30 Nitto Denko Corp 光半導体素子封止用樹脂組成物の製造方法
JP2012156214A (ja) * 2011-01-24 2012-08-16 Nichia Chem Ind Ltd 発光装置
US9044135B2 (en) 2011-06-16 2015-06-02 Kabushiki Kaisha Toshiba Endoscope apparatus and electronic apparatus
JP2013256622A (ja) * 2012-06-14 2013-12-26 Jsr Corp 蛍光体粒子含有組成物、蛍光体粒子含有膜および光半導体装置
JP2014084332A (ja) * 2012-10-19 2014-05-12 Daicel Corp 硬化性エポキシ樹脂組成物及びその硬化物、並びに光半導体装置
JP2016102206A (ja) * 2014-11-12 2016-06-02 株式会社スリーボンド エポキシ樹脂組成物
JP2018044157A (ja) * 2016-09-07 2018-03-22 住友化学株式会社 波長変換材料含有縮合型シリコーン組成物の製造方法及び波長変換シートの製造方法
JP2017125212A (ja) * 2017-04-10 2017-07-20 株式会社ダイセル 硬化性エポキシ樹脂組成物及びその硬化物、並びに光半導体装置

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TW200906886A (en) 2009-02-16
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JP4452755B2 (ja) 2010-04-21
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