WO2009063887A1 - ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法 - Google Patents

ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法 Download PDF

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Publication number
WO2009063887A1
WO2009063887A1 PCT/JP2008/070553 JP2008070553W WO2009063887A1 WO 2009063887 A1 WO2009063887 A1 WO 2009063887A1 JP 2008070553 W JP2008070553 W JP 2008070553W WO 2009063887 A1 WO2009063887 A1 WO 2009063887A1
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Prior art keywords
positive
permanent resist
photosensitive composition
producing
positive photosensitive
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PCT/JP2008/070553
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English (en)
French (fr)
Inventor
Hiroshi Morita
Hiromi Sato
Atsushi Kobayashi
Jinichi Omi
Seiichi Saito
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Adeka Corporation
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Publication date
Application filed by Adeka Corporation filed Critical Adeka Corporation
Priority to JP2009541143A priority Critical patent/JP5105555B2/ja
Priority to CN200880116023.1A priority patent/CN101855598B/zh
Priority to US12/742,557 priority patent/US8211619B2/en
Priority to EP08850248.9A priority patent/EP2216682B1/en
Publication of WO2009063887A1 publication Critical patent/WO2009063887A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
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    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
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    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
    • C08K5/23—Azo-compounds
    • C08K5/235—Diazo and polyazo compounds
    • C—CHEMISTRY; METALLURGY
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    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
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    • Y10S430/115—Cationic or anionic
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    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
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    • Y10S430/12—Nitrogen compound containing
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
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  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　透明性が高いだけでなく、基板製作時の温度に耐えられる耐熱性、耐溶剤性、さらには永久レジストとしての耐経時変化性に優れた絶縁層を与えることのできるポジ型感光性組成物、このポジ型感光性組成物を用いたポジ型永久レジスト及びポジ型永久レジストの製造方法を提供する。 　下記一般式（１）、 で表される環状シロキサン化合物の１種以上と、下記一般式（２）、 で表されるアリールアルコキシシラン化合物の１種以上と、を反応させて得られる構造の、（Ａ）シラノール基を有する硬化性シリコーン樹脂、（Ｂ）ジアゾナフトキノン類、及び（Ｃ）溶剤、を含有するポジ型感光性組成物、このポジ型感光性組成物を用いたポジ型永久レジスト及びポジ型永久レジストの製造方法である。
PCT/JP2008/070553 2007-11-13 2008-11-12 ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法 WO2009063887A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009541143A JP5105555B2 (ja) 2007-11-13 2008-11-12 ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法
CN200880116023.1A CN101855598B (zh) 2007-11-13 2008-11-12 正型感光性组合物、正型永久抗蚀膜及正型永久抗蚀膜的制造方法
US12/742,557 US8211619B2 (en) 2007-11-13 2008-11-12 Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist
EP08850248.9A EP2216682B1 (en) 2007-11-13 2008-11-12 Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist

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JP2007294503 2007-11-13
JP2007-294503 2007-11-13

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WO2009063887A1 true WO2009063887A1 (ja) 2009-05-22

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US (1) US8211619B2 (ja)
EP (1) EP2216682B1 (ja)
JP (1) JP5105555B2 (ja)
KR (1) KR101558442B1 (ja)
CN (1) CN101855598B (ja)
TW (1) TWI468867B (ja)
WO (1) WO2009063887A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047248A1 (ja) * 2008-10-21 2010-04-29 株式会社Adeka ポジ型感光性組成物及び永久レジスト
KR20110001903A (ko) * 2009-06-29 2011-01-06 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물, 경화막, 층간 절연막, 층간 절연막의 형성 방법, 표시 소자, 및 층간 절연막 형성용 실록산 폴리머
JP2011227291A (ja) * 2010-04-20 2011-11-10 Adeka Corp ポジ型感光性組成物及び永久レジスト
JP2012113160A (ja) * 2010-11-25 2012-06-14 Adeka Corp ポジ型感光性樹脂組成物及び永久レジスト
JP2012113161A (ja) * 2010-11-25 2012-06-14 Adeka Corp ポジ型感光性樹脂組成物及び永久レジスト
WO2015137438A1 (ja) * 2014-03-14 2015-09-17 Dic株式会社 酸素プラズマエッチング用レジスト材料、レジスト膜、及びそれを用いた積層体
US10249404B2 (en) 2013-07-12 2019-04-02 Bioneer Corporation Ceramic paste composition using carbon nanotube or carbon nanotube-metal complex, and conductive film containing same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5698070B2 (ja) * 2011-05-11 2015-04-08 株式会社Adeka ポジ型感光性組成物及びその硬化物
JP2013092633A (ja) * 2011-10-25 2013-05-16 Adeka Corp ポジ型感光性組成物
KR102464890B1 (ko) 2017-10-18 2022-11-07 삼성전자주식회사 축합다환 헤테로방향족 화합물, 유기 박막 및 전자 소자
KR102684640B1 (ko) 2018-12-03 2024-07-11 삼성전자주식회사 유기 박막, 유기 박막 트랜지스터 및 전자 소자

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JP4373082B2 (ja) * 2001-12-28 2009-11-25 富士通株式会社 アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法
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EP1662322B1 (en) 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
JP5137295B2 (ja) * 2005-02-24 2013-02-06 株式会社Ａｄｅｋａ ケイ素含有硬化性組成物及びその硬化物
JP4960330B2 (ja) * 2008-10-21 2012-06-27 株式会社Ａｄｅｋａ ポジ型感光性組成物及び永久レジスト

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
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WO2010047248A1 (ja) * 2008-10-21 2010-04-29 株式会社Adeka ポジ型感光性組成物及び永久レジスト
KR20110001903A (ko) * 2009-06-29 2011-01-06 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물, 경화막, 층간 절연막, 층간 절연막의 형성 방법, 표시 소자, 및 층간 절연막 형성용 실록산 폴리머
JP2011028225A (ja) * 2009-06-29 2011-02-10 Jsr Corp ポジ型感放射線性組成物、硬化膜、層間絶縁膜、層間絶縁膜の形成方法、表示素子、及び層間絶縁膜形成用のシロキサンポリマー
KR101703857B1 (ko) 2009-06-29 2017-02-07 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물, 경화막, 층간 절연막, 층간 절연막의 형성 방법, 및 표시 소자
JP2011227291A (ja) * 2010-04-20 2011-11-10 Adeka Corp ポジ型感光性組成物及び永久レジスト
JP2012113160A (ja) * 2010-11-25 2012-06-14 Adeka Corp ポジ型感光性樹脂組成物及び永久レジスト
JP2012113161A (ja) * 2010-11-25 2012-06-14 Adeka Corp ポジ型感光性樹脂組成物及び永久レジスト
US10249404B2 (en) 2013-07-12 2019-04-02 Bioneer Corporation Ceramic paste composition using carbon nanotube or carbon nanotube-metal complex, and conductive film containing same
WO2015137438A1 (ja) * 2014-03-14 2015-09-17 Dic株式会社 酸素プラズマエッチング用レジスト材料、レジスト膜、及びそれを用いた積層体
JP5871203B1 (ja) * 2014-03-14 2016-03-01 Dic株式会社 酸素プラズマエッチング用レジスト材料、レジスト膜、及びそれを用いた積層体

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EP2216682B1 (en) 2013-07-17
KR101558442B1 (ko) 2015-10-07
US20100273104A1 (en) 2010-10-28
TWI468867B (zh) 2015-01-11
EP2216682A1 (en) 2010-08-11
TW200937121A (en) 2009-09-01
CN101855598A (zh) 2010-10-06
JP5105555B2 (ja) 2012-12-26
KR20100099162A (ko) 2010-09-10
EP2216682A4 (en) 2012-05-02
CN101855598B (zh) 2012-08-08
US8211619B2 (en) 2012-07-03

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