WO2013042973A3 - Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법 - Google Patents

Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법 Download PDF

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Publication number
WO2013042973A3
WO2013042973A3 PCT/KR2012/007576 KR2012007576W WO2013042973A3 WO 2013042973 A3 WO2013042973 A3 WO 2013042973A3 KR 2012007576 W KR2012007576 W KR 2012007576W WO 2013042973 A3 WO2013042973 A3 WO 2013042973A3
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WO
WIPO (PCT)
Prior art keywords
photoresist composition
fine pattern
line photoresist
repeat unit
represented
Prior art date
Application number
PCT/KR2012/007576
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English (en)
French (fr)
Other versions
WO2013042973A2 (ko
Inventor
이정열
장유진
이재우
김재현
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Priority to US14/346,356 priority Critical patent/US20140242520A1/en
Priority to CN201280046335.6A priority patent/CN103988128A/zh
Publication of WO2013042973A2 publication Critical patent/WO2013042973A2/ko
Publication of WO2013042973A3 publication Critical patent/WO2013042973A3/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

고온(200 내지 250℃)에서의 열적 안정성이 우수하고, 산확산막을 이용한 패턴의 미세화가 가능한 포토레지스트 패턴을 형성할 수 있는 I-선(line) 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법이 개시된다. 상기 I-선(line) 포토레지스트 조성물은 본 명세서의 화학식 1로 표시되는 반복단위 1 내지 99몰%, 및 본 명세서의 화학식 2로 표시되는 반복단위, 본 명세서의 화학식 3으로 표시되는 반복단위 및 이들의 혼합물로 이루어진 군으로부터 선택되는 반복단위를 1 내지 99몰% 포함하는 고분자; 2개 이상의 디아조나프토퀴논(DNQ)기를 포함하는 감광성 화합물; 및 유기용매를 포함한다.
PCT/KR2012/007576 2011-09-22 2012-09-21 Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법 WO2013042973A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/346,356 US20140242520A1 (en) 2011-09-22 2012-09-21 I-line photoresist composition and method for forming fine pattern using same
CN201280046335.6A CN103988128A (zh) 2011-09-22 2012-09-21 I线光刻胶组合物以及使用该组合物形成精细图案的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0095754 2011-09-22
KR1020110095754A KR20130032071A (ko) 2011-09-22 2011-09-22 Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법

Publications (2)

Publication Number Publication Date
WO2013042973A2 WO2013042973A2 (ko) 2013-03-28
WO2013042973A3 true WO2013042973A3 (ko) 2013-05-23

Family

ID=47915021

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007576 WO2013042973A2 (ko) 2011-09-22 2012-09-21 Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법

Country Status (5)

Country Link
US (1) US20140242520A1 (ko)
KR (1) KR20130032071A (ko)
CN (1) CN103988128A (ko)
TW (1) TWI564659B (ko)
WO (1) WO2013042973A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150101875A (ko) 2014-02-27 2015-09-04 삼성전자주식회사 블록 공중합체를 이용한 미세 패턴 형성 방법
US20180224741A1 (en) * 2015-08-06 2018-08-09 Rohm And Haas Electronic Materials Llc Compositions and methods for forming a pixel-defining layer
KR101598826B1 (ko) 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
JP6811247B2 (ja) * 2016-09-30 2021-01-13 東京応化工業株式会社 洗浄組成物、洗浄方法、及び半導体の製造方法
KR101984054B1 (ko) 2017-06-12 2019-05-30 한국세라믹기술원 미세 패턴의 형상 제어 방법
CN108630778B (zh) * 2018-05-04 2020-07-07 中国电子科技集团公司第十三研究所 倾斜台面的制备方法及探测器的制备方法
CN112424691A (zh) * 2018-07-09 2021-02-26 应用材料公司 用于线加倍的光刻胶组合物
KR102146349B1 (ko) 2018-12-27 2020-08-20 한국세라믹기술원 정렬된 금속 입자, 및 그 제조 방법
CN111538210B (zh) * 2020-05-26 2023-11-17 苏州理硕科技有限公司 一种正性光刻胶组合物和形成光刻胶图案的方法
KR102256837B1 (ko) 2020-09-24 2021-05-28 영창케미칼 주식회사 Center - Edge간 단차의 개선 및 LER 개선용 I-선용 네가티브형 포토레지스트 조성물공정 마진 개선용 I-선용 네가티브형 포토레지스트 조성물

Citations (4)

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JPH0566563A (ja) * 1991-09-05 1993-03-19 Japan Synthetic Rubber Co Ltd 感放射線性組成物
JPH08101507A (ja) * 1994-09-30 1996-04-16 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
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JPH0566563A (ja) * 1991-09-05 1993-03-19 Japan Synthetic Rubber Co Ltd 感放射線性組成物
JPH08101507A (ja) * 1994-09-30 1996-04-16 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
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JPH09197673A (ja) * 1996-01-22 1997-07-31 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物

Also Published As

Publication number Publication date
TW201319734A (zh) 2013-05-16
US20140242520A1 (en) 2014-08-28
TWI564659B (zh) 2017-01-01
WO2013042973A2 (ko) 2013-03-28
KR20130032071A (ko) 2013-04-01
CN103988128A (zh) 2014-08-13

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