WO2008149876A1 - Pavé résistif - Google Patents

Pavé résistif Download PDF

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Publication number
WO2008149876A1
WO2008149876A1 PCT/JP2008/060251 JP2008060251W WO2008149876A1 WO 2008149876 A1 WO2008149876 A1 WO 2008149876A1 JP 2008060251 W JP2008060251 W JP 2008060251W WO 2008149876 A1 WO2008149876 A1 WO 2008149876A1
Authority
WO
WIPO (PCT)
Prior art keywords
thick film
electrode
surface electrode
resistor
electrodes
Prior art date
Application number
PCT/JP2008/060251
Other languages
English (en)
Japanese (ja)
Inventor
Takahiro Matsui
Hisakazu Nagata
Seiji Karasawa
Original Assignee
Koa Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koa Corporation filed Critical Koa Corporation
Priority to CN200880017675XA priority Critical patent/CN101681702B/zh
Publication of WO2008149876A1 publication Critical patent/WO2008149876A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing

Definitions

  • the present invention relates to a thick film rectangular chip resistor, and more particularly to a configuration of an electrode having improved resistance to sulfur gas.
  • End face electrodes 1 8, 1 9 connecting the thick film upper surface electrodes 1 2, 1 3 and the thick film lower surface electrodes 1 4, 1 5, thick film upper surface electrodes 1 2, 1 2, 1 and 3, and end face electrodes 1 8 and 1 9 and thick film lower surface electrodes 1 4 and 1 5, and metal layers 2 0 and 2 1 are provided.
  • an Ag-based material or an Ag_Pd-based material is generally used as the material for the thick film upper surface electrode 1 2 or 1 3 or the thick film lower surface electrode 1 4 or 1 5.
  • an Ag-based material or an Ag_Pd-based material is generally used as the material for the thick film upper surface electrode 1 2 or 1 3 or the thick film lower surface electrode 1 4 or 1 5.
  • the Ag-based material of the top electrodes 12 and 13 forms silver sulfide, which causes poor continuity and disconnection. There is a problem that it may occur.
  • the following publications have proposed a countermeasure.
  • the second upper surface electrode layer 5 formed using a thick film Ag paste is provided so as to overlap a part of the first upper surface electrode layer 2. Proposed (see summary). Since the second upper surface electrode layer 5 is formed so as to overlap a part of the upper surface of the protective layer 6, the first upper surface electrode layer 2 is not eroded by the sulfide gas and hardly breaks. Is described.
  • a first upper electrode layer 3 made of a silver-based thick film on an alumina substrate 1 and a noble metal thin film completely covering the first upper electrode layer 3 are disclosed. It is proposed to provide a second upper surface electrode layer 4 and a ruthenium-based resistance layer 2 that overlaps a part of the second upper surface electrode layer 4.
  • the noble metal-based thin film uses a gold resinate (column 0 0 10 10), which describes that the sulfidation of the first upper surface electrode layer 3 is prevented.
  • the upper surface electrode protective layer is formed on the upper surface of the upper surface electrode layer 22, which is a lower layer of a portion where the protective layer 40 and the mech layer 26 are in contact with each other. It is proposed that the upper electrode protective layer 23 is formed of a material excellent in sulfur resistance, for example, a silver-based thick film containing 5.0% or more of palladium. Yes. As a result, even if a material with no sulfation resistance is used for the upper electrode layer 22, the upper electrode layer 22 will not be sulfided. It is described that it can be eliminated (column 0 0 0 7).
  • an electrode protective layer that protects an Ag-based electrode from sulfidation in Japanese Patent Application Laid-Open No. 7-166960, the second upper surface electrode layer 5;
  • the second upper surface electrode layer 4 is formed in Japanese Patent No. 1 764 40 2 and the upper surface electrode protective layer 2 3) is formed in Japanese Patent Application Laid-Open No. 2 0 0-02-064 2003. Therefore, since the number of layers of the upper electrode increases, there is a problem that the manufacturing process increases and the manufacturing cost increases. Disclosure of the invention
  • the present invention has been made based on the above-described circumstances, and an object of the present invention is to provide a chip resistor having high resistance to sulfur gas without increasing the number of manufacturing steps.
  • the chip resistor of the present invention includes a pair of thick film upper electrodes disposed on the upper and lower surfaces of the ceramic substrate, a pair of thick film lower electrodes, and a thick film disposed between the pair of thick film upper electrodes.
  • a resistor, a protective film covering the thick film resistor, an end surface electrode connecting the thick film upper surface electrode and the thick film lower surface electrode disposed on an end surface of the ceramic substrate, and the protective film covered In a chip resistor comprising a non-thick film upper electrode portion and a metal layer covering the end face electrode and the thick film lower electrode, the metal material contained in the thick film upper electrode is mainly Ag. It is characterized by further including P d and A u as components.
  • the metal material contained in the thick film upper surface electrode By including P and A as the main component, the forces S and Ag are further enhanced, and the resistance to sulfidation gas is increased, and the sulfidation of the thick film top electrode mainly composed of Ag-based material is extremely advanced. It can suppress well. That is, according to the configuration of the thick film upper surface electrode of the present invention, even when exposed to the sulfurizing atmosphere in the sulfidation test, the thick film upper surface electrode is not even discolored and no change in appearance is recognized. Therefore, it is possible to provide a chip resistor having high resistance to sulfur gas without increasing the number of processes only by changing the composition of the electrode paste material.
  • FIG. 1 is a cross-sectional view of a chip resistor according to an embodiment of the present invention.
  • 2A to 2G are cross-sectional views showing the manufacturing process of the chip resistor.
  • Fig. 3 is a cross-sectional view of a conventional chip resistor.
  • FIG. 1 shows the chip resistor of the present invention
  • FIG. 2 shows the manufacturing process.
  • the same or corresponding members or elements will be described with the same reference numerals.
  • the chip resistor of the present invention is the same as the conventional chip resistor except that the metal material of the thick film upper surface electrodes 2 2 and 2 3 is mainly composed of Ag and further includes P d and A u. It's not different. That is, as shown in FIG. 1, a pair of thick film upper surface electrodes 2 2, 2 3 and a pair of thick film lower surface electrodes 14 4, 15 disposed on the upper and lower surfaces of the alumina ceramic substrate 11 1, and a pair of upper surface electrodes And a ruthenium oxide thick film resistor 16 placed between 2 2 and 2 3.
  • the metal material contained in the thick film upper surface electrodes 2 2 and 2 3 is The main component is Ag. 1 to 15 to 25%, preferably Au force S1 to 20 wt%.
  • the metal material is mainly composed of Ag, and more!
  • An electrode material containing 5 d and A u is used, and for the thick film lower surface electrodes 14 and 15, an Ag-based or Ag-Pd-based electrode material not including A u is used as before.
  • the protective film 17 covering the thick film resistor 16, the thick film upper surface electrodes 2 2, 2 3 and the thick film lower surface electrode 14 disposed on the end surface of the alumina ceramic substrate 11 1, End electrodes 1 8 and 1 9 are connected to 1 5.
  • a coating layer 2 covering the portions of the thick film upper surface electrodes 2 2 and 2 3 that are not covered with the protective film 17, the end surface electrodes 18 and 19, and the thick film lower surface electrodes 14 and 15. 0, 2 1 are provided.
  • the protective film 17 is composed of two layers of a first protective coat 17 a made of a glass-based insulating material and a second protective coat 17 b made of an epoxy resin-based insulating material.
  • the end electrodes 18 and 19 are composed of Ni thin films formed by sputtering.
  • the plating layers 20 and 21 are composed of a base coating layer such as Ni and a plating layer such as Sn.
  • the boundary portion A between the protective film 17 and the plating layer 20 is located on the thick film upper surface electrode 22, and the boundary portion B between the protective film 17 and the coating layer 21 is the upper surface. Located on electrodes 2 3.
  • sulfide gas enters from the boundary portions A and B between the protective film 17 and the plating layers 20 and 21, and the thick film upper surface electrode of the present invention is used to effectively sulfidize the intrusion portion. Can be suppressed.
  • the metal material contained in the thick film upper surface electrodes 2 2 and 2 3 contains Ag as a main component, and? The reason why it is preferable to include 1 to 15 to 25% and an Au force S1 to 20 wt% in terms of improving resistance to sulfur gas will be described. This is based on the experimental results described below.
  • an electrode material paste consisting of 17 to 20 wt% organic component, 2 to 3 wt% glass component, and the remaining metal components shown in the table below is prepared.
  • This electrode material paste is printed and fired on the ceramic substrate of Samples 1-11, heated to approximately 100 ° C in a liquid containing sulfur, and immersed for 300 hours to observe the change. did.
  • the organic components almost disappear during firing, so the mixing ratio of the metal components in the electrode material is shown in the table below.
  • the appearance observation results are as shown in the table below.
  • Sample 1 is Ag 10 0 wt%
  • Sample 2 is Ag 9 5 wt% and P d 5 wt%
  • Sample 3 is Ag 9 0 wt% and P d 1 0 wt%
  • Sample 4 is Ag 85 wt% and P d 15 wt%
  • Sample 5 is Ag 80 wt% and P d 20 wt%.
  • Sample 1 of Ag 1 OO wt% turned quite black in the sulfidation test, and as the ratio of P d increased, the degree of discoloration decreased, but 20 g of P d was added to Ag. Even things are discolored.
  • sample 6 ⁇ L 1 fixes wt% of Pd to 20%, sample 6 is A u 5 wt% and Ag 7 5 wt%, and sample 7 is A u 1 0 wt% and Ag 7 0 wt%, Sample 8 is A ul 5 wt% and Ag 6 5 w t%, sample 9 is A u 2 0 wt% and Ag 6 0 wt%, sample 1 0 is A u 2 5 wt% and Ag 5 5 wt%, and sample 1 1 is A u 3 0 wt% and A g 50 wt%.
  • the blending amount of Pd is preferably 15 to 25 wt%.
  • the metal material of the electrode paste is mainly composed of Ag and Pd force 1
  • the content of 5 to 25 wt% and the Au force of 1 to 20 wt% is preferable from the viewpoint of improving the resistance to sulfur gas.
  • a more preferable range of Au is 3 to 10 wt% as a range in which a sufficient discoloration suppressing effect can be obtained.
  • an alumina ceramic substrate 11 is prepared.
  • one chip resistor is shown, but a multi-layer ceramic substrate is actually used.
  • thick film upper surface electrodes 2 2 and 2 3 and thick film lower surface electrodes 14 and 15 are formed.
  • Thick film upper surface electrodes 2 2 and 2 3 are mainly composed of organic component, glass component and Ag, and contain? (1 to 15 to 25%, Au force l to 20 wt%, the rest
  • An electrode material paste made of a metal component of Ag is prepared, an electrode pattern is formed by screen printing, and then fired, whereas the bottom electrodes 14 and 15 are mounted on the mounting side. This is an electrode and is not affected by the presence of sulfur gas, so prepare an Ag-based electrode material paste that does not contain Au as before, form an electrode pattern by screen printing, and fire it. By forming.
  • a thick film resistor 16 that straddles the thick film upper surface electrodes 2 2 and 2 3 is formed by screen printing and baking a ruthenium oxide paste.
  • the conventional Ag type or A In the case of g—P d-based electrode the Ag component diffuses into the thick film resistor 16 and causes a change in resistance.
  • it is an Ag-based electrode containing A u and P d, A The diffusion of g to the resistor is suppressed, and the change in resistance value can be suppressed.
  • the first protective coat 17a made of a glass material covering the resistor 16 is formed, and the resistance value is adjusted by laser trimming of the resistor 16 as necessary.
  • a second protective coat 17 b made of a resin material such as an epoxy resin is formed. As a result, a protective film 17 composed of the first protective coat 17 a and the second protective coat 17 b is formed.
  • the multi-chip substrate is divided into pieces corresponding to each chip resistor, and as shown in Fig. 2F, the end face electrodes 1 8 and 1 9 are connected to the top face electrodes 2 2 and 2 3 and the bottom face electrode 1 4 , 1 5 and 5 are connected.
  • the end electrodes 18 and 19 are Ni-based thin films formed by sputtering.
  • FIG. 2G the portions of the upper surface electrodes 2 2 and 2 3 that are not covered with the protective film 17, the end surface electrodes 1 8 and 1 9, and the lower surface electrodes 1 4 and 1 5 are covered.
  • the plating layers 2 0 and 2 1 are provided. Thereby, the chip resistor of the present invention is completed.
  • the manufacturing process of the chip resistor of the present invention has conventionally used an Ag-based or Ag-Pd-based electrode material paste, whereas Pd is 15 to 25 wt%, A u
  • the difference is that the electrode material paste composed of a metal component containing 1 to 20 wt% of the material and the balance being Ag is used, and the other points are not changed. Accordingly, it is possible to manufacture a highly resistant chip resistor that does not even cause discoloration of the upper surface electrode with respect to the sulfur gas without increasing the number of processes only by changing the composition of the electrode paste.
  • the present invention employs a material with extremely high resistance to sulfidation for the upper surface electrode, even if it is used in an atmosphere containing sulfur gas, a sulfidation breakage occurs in the upper surface electrode. It can be used for thick film chip resistors that may be used in an atmosphere containing sulfur gas, such as for car electronics, power supplies, and machine tools.

Abstract

L'invention concerne un pavé résistif comprenant une paire d'électrodes supérieures à couche épaisse (22, 23) et une paire d'électrodes inférieures à couche épaisse (14, 15) agencées respectivement sur les faces supérieure et inférieure d'un substrat céramique (11), un élément résistif à couche épaisse (16) agencé sur la paire d'électrodes supérieures à couche épaisse, un film protecteur (17) recouvrant l'élément résistif à couche épaisse, des électrodes de face d'extrémité (18, 19) agencées sur les faces d'extrémité du substrat céramique pour relier les électrodes supérieures à couche épaisse aux électrodes inférieures à couche épaisse, et des couches de placage (20, 21) recouvrant les parties des électrodes supérieures à couche épaisse non recouvertes du film protecteur, les électrodes de face d'extrémité et les électrodes inférieures à couche épaisse. Dans ce pavé résistif, le matériau métallique contenu dans les électrodes supérieures à couche épaisse (22, 23) est principalement composé d'Ag, tout en contenant également Pd et Au.
PCT/JP2008/060251 2007-05-31 2008-05-28 Pavé résistif WO2008149876A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200880017675XA CN101681702B (zh) 2007-05-31 2008-05-28 片式电阻器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007144760A JP5329773B2 (ja) 2007-05-31 2007-05-31 チップ抵抗器
JP2007-144760 2007-05-31

Publications (1)

Publication Number Publication Date
WO2008149876A1 true WO2008149876A1 (fr) 2008-12-11

Family

ID=40093689

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060251 WO2008149876A1 (fr) 2007-05-31 2008-05-28 Pavé résistif

Country Status (3)

Country Link
JP (1) JP5329773B2 (fr)
CN (1) CN101681702B (fr)
WO (1) WO2008149876A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066743A (ja) * 2014-09-25 2016-04-28 Koa株式会社 チップ抵抗器
JP2016072298A (ja) * 2014-09-26 2016-05-09 Koa株式会社 チップ抵抗器の製造方法
US10109398B2 (en) 2014-09-25 2018-10-23 Koa Corporation Chip resistor and method for producing same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9157783B2 (en) 2011-07-25 2015-10-13 Yazaki Corporation Method for producing conductive segment
JP5965595B2 (ja) * 2011-07-25 2016-08-10 矢崎総業株式会社 摺動接触用導電セグメントの製造方法
JP6326192B2 (ja) 2014-03-19 2018-05-16 Koa株式会社 チップ抵抗器およびその製造法
CN107533889B (zh) * 2015-04-24 2019-11-05 釜屋电机株式会社 矩形片式电阻器及其制造方法
JP6499007B2 (ja) * 2015-05-11 2019-04-10 Koa株式会社 チップ抵抗器
JP6627731B2 (ja) 2016-12-01 2020-01-08 株式会社村田製作所 巻線型コイル部品及び巻線型コイル部品の製造方法
JP6888662B2 (ja) * 2019-11-27 2021-06-16 株式会社村田製作所 巻線型コイル部品及び巻線型コイル部品の製造方法

Citations (3)

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JPS51145855A (en) * 1975-06-11 1976-12-15 Tanaka Precious Metal Ind Relatively small electric current contact material
JPH07169601A (ja) * 1993-12-16 1995-07-04 Matsushita Electric Ind Co Ltd 角形チップ抵抗器およびその製造方法
JP2001155957A (ja) * 1999-04-30 2001-06-08 Matsushita Electric Ind Co Ltd 電子部品

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JPS6152331A (ja) * 1984-08-22 1986-03-15 Tanaka Kikinzoku Kogyo Kk 耐食性銀合金
JP2003178622A (ja) * 2001-12-07 2003-06-27 Nec Tokin Corp 電極ペースト組成物
JP3845030B2 (ja) * 2002-02-25 2006-11-15 コーア株式会社 チップ抵抗器の製造方法
DE112005001527B4 (de) * 2004-07-06 2019-10-02 Murata Manufacturing Co., Ltd. Elektrisch leitfähige Paste und eine elektrisch leitfähige Paste aufweisendes keramisches Elektronikbauelment
JP4512004B2 (ja) * 2005-07-19 2010-07-28 立山科学工業株式会社 チップ抵抗器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145855A (en) * 1975-06-11 1976-12-15 Tanaka Precious Metal Ind Relatively small electric current contact material
JPH07169601A (ja) * 1993-12-16 1995-07-04 Matsushita Electric Ind Co Ltd 角形チップ抵抗器およびその製造方法
JP2001155957A (ja) * 1999-04-30 2001-06-08 Matsushita Electric Ind Co Ltd 電子部品

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066743A (ja) * 2014-09-25 2016-04-28 Koa株式会社 チップ抵抗器
US10109398B2 (en) 2014-09-25 2018-10-23 Koa Corporation Chip resistor and method for producing same
JP2016072298A (ja) * 2014-09-26 2016-05-09 Koa株式会社 チップ抵抗器の製造方法

Also Published As

Publication number Publication date
JP2008300607A (ja) 2008-12-11
CN101681702A (zh) 2010-03-24
JP5329773B2 (ja) 2013-10-30
CN101681702B (zh) 2011-09-07

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