WO2008050670A1 - Method of controlling electron beam focusing of pierce type electron gun and control device therefor - Google Patents
Method of controlling electron beam focusing of pierce type electron gun and control device therefor Download PDFInfo
- Publication number
- WO2008050670A1 WO2008050670A1 PCT/JP2007/070352 JP2007070352W WO2008050670A1 WO 2008050670 A1 WO2008050670 A1 WO 2008050670A1 JP 2007070352 W JP2007070352 W JP 2007070352W WO 2008050670 A1 WO2008050670 A1 WO 2008050670A1
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- WO
- WIPO (PCT)
- Prior art keywords
- electron gun
- pierce
- type electron
- piercing
- control device
- Prior art date
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims description 35
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 238000005086 pumping Methods 0.000 claims description 10
- 230000000694 effects Effects 0.000 abstract description 17
- 230000006641 stabilisation Effects 0.000 abstract description 8
- 238000011105 stabilization Methods 0.000 abstract description 8
- 230000003472 neutralizing effect Effects 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 description 27
- 239000010408 film Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- 239000000395 magnesium oxide Substances 0.000 description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000009529 body temperature measurement Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000005591 charge neutralization Effects 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- -1 MgO and SiO Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 210000001331 nose Anatomy 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/07—Eliminating deleterious effects due to thermal effects or electric or magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/51—Arrangements for controlling convergence of a plurality of beams by means of electric field only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/026—Eliminating deleterious effects due to thermal effects, electric or magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
Definitions
- the present invention relates to a control method for a piercing electron gun that can keep an electron beam stable over a long period of time, an electron beam control device for a piercing electron gun, and a vacuum apparatus including the same.
- the pierce-type electron gun is characterized in that the beam generation source and the object to be irradiated can be separated from each other in a vacuum atmosphere, and the beam generation source can be held stably.
- the energy source is electrons and can be easily swung and deflected, it is widely used as a heating source for vapor deposition equipment, melting furnaces and heat treatment furnaces.
- Heat source for in-line type vapor deposition equipment for metal oxides such as MgO and SiO which requires a long-term stability of 300 hours or more, and can be heated to a predetermined evaporation rate in a short time. Al, Co—Ni, Cu, etc.
- Fig. 9 shows an example of using an electron gun for an MgO vapor deposition device
- Fig. 10 shows a winding vapor deposition device.
- MgO magnesium oxide
- an electron beam evaporation apparatus having a plurality of pierce-type electron guns has been developed (FIG. 15).
- This device is configured, for example, as an electron beam vapor deposition device 81 or 82 in which two chambers of a charge / unload chamber and a vapor deposition chamber or three chambers of a charge chamber, a vapor deposition chamber and a discharge chamber are connected via a partition valve. .
- the outline of the vapor deposition chamber 2 of the electron beam vapor deposition apparatuses 81 and 82 is as shown in FIG.
- the Pierce-type electron gun 3 is mainly used as a heating source for continuously forming MgO, which is a protective film for the PDP. Emerge almost horizontally from a piercing electron gun fixed to the side wall of the deposition chamber
- the electron beam F is deflected by the electron beam deflecting device 20 and irradiated to the evaporation point P of MgOl l in the hearth 4 which is the evaporation source, thereby generating a vapor flow of MgO and passing over it.
- An MgO film is formed on the surface of the glass substrate 10 mounted on the carrier that moves to. That is, the vapor deposition chamber is also an electron beam irradiation chamber.
- Such electron beam evaporation apparatuses 81 and 82 do not expose the vapor deposition chamber to the atmosphere.
- the glass substrate 10 or the carrier on which the glass substrate is mounted is used. Since pretreatment such as degassing and heat treatment can be performed, the atmosphere in the deposition chamber can be maintained stably, and the production volume is large compared to batch type equipment. Power Long-term stable operation of the piercing electron gun is desired.
- a force sword that could cause abnormal discharge of the electron gun was provided with a through-hole or ion collector for receiving ions and components scattered by the collision of ions (for example, see Patent Documents 1 and 2).
- the spread of the beam inside the electron gun affects the components inside the electron gun and may overheat the components. As a result, there were cases where the electron gun itself was damaged.
- the electron beam emitter (beam generator, generation unit) is stabilized against assembly accuracy and changes over time.
- the electron gun itself is optimized and designed so that the force sword surface angle, Wehnelt angle, anode angle, force sword-enert dimension, force sword anode dimension, etc. are suitable for the above purpose. This is done for the purpose of stabilizing the beam bundling condition due to the electric field.
- Patent Document 1 Japanese Patent Laid-Open No. 2004-14226 (Page 3, Fig. 1)
- Patent Document 2 Japanese Patent Laid-Open No. 2005-268177 (Page 3, Figure 1)
- Patent Document 3 Japanese Patent Laid-Open No. 2005-264204 (Page 4, Figure 1)
- the present invention has been made in view of the above-described problems, and eliminates the effects of the space charge effect and the space charge neutralization action inside the electron gun, and completes the control of the electron beam. Mejiro-an.
- the beam inside the electron gun is affected by the space charge effect as described above.
- Figure 11 shows the electron beam spread and beam energy trends.
- the temperature inside the electron gun is measured, fed back to the pumping speed of the vacuum pumping system, the pressure inside the electron gun is adjusted, and fluctuates due to the effects of space charge effects and space charge neutralization in the electron gun.
- the focusing state of the electron beam is made constant.
- the above problem is solved by a method of directly measuring the temperature inside the piercing electron gun and controlling the piercing electron gun according to the measured temperature.
- control device for a pierce-type electron gun having means for directly measuring the temperature inside the pierce-type electron gun.
- the beams entering the second focusing coil from the first focusing coil be as parallel as possible in consideration of the beam stability to the object.
- This control is performed by adjusting the pressure inside the electron gun.
- the beam is adjusted from almost parallel to slightly divergent.
- an electron beam is output by electrical interlock, and a predetermined current flows through the focusing and swinging coils!
- an in-line type vapor deposition apparatus that operates an electron gun continuously for a long time, it is produced by controlling the pressure in the vapor deposition chamber to be constant and at a constant process gas flow rate. If the amount of gas brought in from the outside varies, the deposition rate varies in the case of the method described later.
- a reliable deposition rate measuring means such as a crystal oscillation type deposition controller is used to adjust the power of the electron gun, beam focusing and oscillation system Power to feed back, for metal oxides
- the film formation rate measurement means for a long time was not enough.
- the newly developed means has enabled us to supply effective control means for fluctuations in irradiation chamber pressure.
- FIG. 1 is an electron gun evacuation system diagram of an embodiment of the present invention.
- FIG. 2 shows Example 1 of the present invention. It is sectional drawing of a 30kW Pierce type electron gun. Indicates the location of thermocouples R1 and R2.
- FIG. 3 is a vacuum exhaust system diagram of the lOOkW pierce-type electron gun according to Embodiment 2 of the present invention.
- a differential exhaust pipe is installed in the differential exhaust hole.
- FIG. 4 is a cross-sectional view of an lOOkW piercing electron gun according to Embodiment 2 of the present invention. Indicates the location of thermocouples R1 to R6.
- FIG. 5 is a principle diagram of a piercing electron gun. The principle of electron beam emission is shown. Thermal electrons are emitted from the heated force sword 37, and the electrons are extracted and focused by the electric field formed by the force sword 37, Wehnelt 38 and anode 39. Therefore force Sword 37, Weinert 38, anode
- the electron beam that has passed through the anode 39 is controlled by the focusing coil 40, the oscillating coil 41, and the electron beam deflecting device 20 so that the electron beam is not dissipated, and is applied to the necessary material 11 on the hearth 4. .
- FIG. 6 is a graph of irradiation chamber pressure and flow register temperature according to the present invention.
- FIG. 7 is a graph of beam current and flow resistor temperature according to the present invention.
- the rotational speed of the turbo molecular pump 51 (Fig. 1) is controlled, the beam focusing state is changed even if the beam current is changed.
- the state is constant and the temperature of the flow register is almost constant.
- FIG. 8 is a graph of the beam current for comparison and the temperature of the anode and the flow resistor.
- FIG. 6 is a diagram when the rotational speed control of the turbo molecular pump 51 (FIG. 1) is not performed. The flow register temperature decreases as the beam current increases!
- FIG. 9 is a schematic view of an MgO vapor deposition apparatus.
- four piercing electron guns 3 are arranged for four ring noses 4. Jingbing control is performed to irradiate the electron beam alternately to the two irradiation points P on Ringno and Sose by controlling the deflection coil.
- the arrow in a figure represents the advancing direction of the glass substrate 10.
- FIG. Also, the one located below the glass substrate 10 is represented by a broken line.
- FIG. 11 It is a schematic diagram of a wind-up type vapor deposition apparatus.
- the evaporation material in the evaporation material container 104 is irradiated with an electron beam from the piercing electron gun 3 to evaporate.
- the tape substrate 110 fed from the unwinding reel 108 is wound around the main roller 107, it is exposed to the vapor of the evaporated material from the vapor deposition material container 104 disposed below, and a film is formed on the surface thereof.
- the film-formed tape base material is taken up on a take-up reel 109. In this way, the apparatus continuously performs film formation.
- A shows the magnetic field generated by the focusing coil.
- B represents the electron beam diameter. As the rate of space charge effects increases, the beam diameter increases.
- the deposition rate is the highest at the deposition pressure of 1.0E-02Pa.
- the electron beam diameter expands due to the effect of the space charge effect, the power density decreases, the amount reaching the deposition material decreases, and the deposition rate decreases.
- the atmospheric particles increase, which causes collisions with the electron beam and evaporated material, resulting in a decrease in film formation rate.
- FIG. 14 is an example of a control method for a conventional in-line electron beam evaporation apparatus.
- a monitor piece XR1, XR2, XR3, XL1, XL2, XL3 is provided near the ring hearth 4 and is fed back to the beam current or focusing coil current for stabilization.
- One unit The irradiating points PR1 and PR2 on the material placed in the groove 4a on the ring hearth are alternately heated by the electron beam from the pierce-type electron gun 3 of Fig. 3 by heating.
- one side is shown as a solid line, and the other side is shown as a dashed line to show the state of jimbing control.
- FIG. 15 is a schematic diagram of an electron beam evaporation apparatus.
- A is 2 rooms and B is 3 rooms
- Electron gun body (housing)
- Electron gun body (housing) Force sword chamber
- thermocouple resistance temperature sensor
- Fig. 1 shows a diagram of the evacuation system of the 30kW Pierce-type electron gun according to the embodiment of the present invention.
- Figure 2 shows a cross-sectional view of a 30kW Pierce-type electron gun.
- Figure 3 shows the vacuum system diagram of the lOOkW piercing electron gun.
- Figure 4 shows a cross-sectional view of the lOOkW piercing electron gun.
- Figure 5 shows the principle diagram of the piercing electron gun.
- FIGS. 1 and 5 A typical structure of the Pierce-type electron gun 3 with an output of 30 kW and functions of each part will be described with reference to FIGS. 1 and 5.
- the main components of a 30kW piercing electron gun are the filament 36 and the force Sword 37, Wehnelt 38, Anode 39, Focusing condenser 40, Oscillating condenser 41, Ion collector 42 (Fig. 5), Flow register 43, Body (housing) 30 and Vacuum exhaust system 49 (Fig. 1) is there.
- Each function is as follows.
- the filament 36 passes an alternating current, generates heat due to Joule heat, and emits thermoelectrons.
- the force sword 37 is generated in the filament 36 by applying a positive voltage to the filament 36, is heated by receiving accelerated electrons, and emits thermoelectrons.
- (Wenel HWehnelt) 38 also called the focus electrode, has the same potential as the force sword 37, and an electric field is formed between the anode 39 and the electron 39 in the center of the anode 39. Is generated.
- the anode 39 is at a positive potential with respect to the force sword 37 and accelerates the thermal electrons generated by the force sword 37. Since the anode 39 is normally at ground potential, a negative voltage is applied to the force sword 37.
- An electron beam passes through a hole in the center.
- the focusing coil 40 may be referred to as a focusing lens or simply a lens.
- the electron beam F that has passed through the anode 39 is focused on the material 11 of the hearth 4 by the generated magnetic field. Ions generated by collision with electron beam F are accelerated by the voltage of anode 39 and force sword 37, and cathode 37 is sputtered to form a hole.
- the ion collector 42 receives the ion beam and prevents damage to the electron gun body when the hole penetrates the cathode 37 after long-term use.
- the flow register 43 reduces the conductance and keeps the pressure in the force sword chamber (in the beam generator) 31 low.
- the pierce-type electron gun having a normal output of 60kW or more includes the second focusing coils 46 and 76, the second flow register 73b (Fig. 4), and the differential in addition to the above. It has an exhaust system 49 '(Fig. 3).
- An electron emission source of a general piercing electron gun uses an indirect heating tungsten power sword. The amount of thermionic emission per unit area from the force sword surface is determined by temperature. On the other hand, the maximum operating temperature is limited due to use in vacuum. For this reason, a force sword with a large diameter is required to obtain a large beam current. Accordingly, the anode hole diameter and the flow resistor hole diameter increase. For this reason, the conductance increases and a second exhaust system is required to secure the differential pressure from the irradiation chamber.
- thermocouples Rl and R2 are directly attached to the anode 39 in the cathode chamber 31 and the flow register 43 in the swing chamber 32.
- a turbo molecular pump 51 having an exhaust speed of 800 liters / second was attached to the vacuum exhaust system 49 via a partition valve 56.
- This turbo molecular pump 51 used a pump capable of controlling the rotational speed (controlling the rotational speed and changing the exhaust speed).
- the temperature of the flow register 43 obtained by the thermocouple R2 in FIG. 2 was fed back to the rotation speed of the turbo molecular pump 51.
- Figures 6 and 7 show the results.
- FIG. 8 shows the beam current and the temperature measurement results of the anode 39 and the flow register 43 when there is no feedback. While the temperature of the anode 39 is constant even when the beam current is increased, the temperature of the flow register 43 tends to decrease. This is because the beam was narrowed by space charge neutralization. This means that the beam diameter inside the electron gun has changed because there is no feedback!
- FIG. 4 An embodiment of an lOOkW electron gun having a second focusing coil, a second flow resistor, and a differential exhaust system will be described with reference to FIGS. Note that the vacuum exhaust system and differential exhaust system not shown in FIG. 4 are connected to the exhaust port 64 and the exhaust port 65, respectively.
- the temperature measurement position at the thermocouple is the thermocouple R4 of the ring 74a provided on the outlet side of the first flow register 73a of the intermediate chamber 62 in Fig. 4 or the ring 74b provided on the inlet of the second flow register 73b.
- Thermocouple R5 is preferred.
- the thermocouple R2 of the first flow register 73a or the thermocouple R6 of the second flow register 73b may be used.
- the rings 74a and 74b are auxiliary members for pressure adjustment provided in the flow register.
- the differential exhaust cylinder 44a in FIG. 3 and the aperture stop 44b in FIG. 13 are auxiliary members for pressure adjustment provided in the intermediate chamber 32.
- the present invention can be applied to vacuum devices having other configurations. Further, it may be used in combination with other electron beam stabilization means.
- the force conductance valve 56 (Figs. 1 and 3) using the turbo molecular pumps 50 and 51 that can vary the exhaust speed by controlling the rotation speed for pressure control inside the electron gun is controlled. May be.
- conductance control methods such as butterfly type, gate type and iris type (camera aperture type), which are commonly used.
- the temperature measurement result inside the electron gun may be fed back to the gas flow rate.
- the method of feeding back the temperature measurement result inside the electron gun to the gas flow rate, the method of feeding back to the conductance, the method of feeding back the space charge neutral gas introduction amount, the pressure inside the irradiation chamber 2 and the pressure and temperature measurement results inside the electron gun By combining multiple methods such as the feedback method, a very stable evaporation system can be supplied.
- an optimal electron beam irradiation dose is obtained in the irradiation chamber 2 that is not simply a constant temperature.
- the temperature may be controlled to an appropriate preset value so that the beam stop corresponding to the pressure in the irradiation chamber 2 is obtained.
- the film formation rate is highest at the vapor deposition pressure of 1 ⁇ 0E-02 Pa.
- Deposition pressure 3. OE-03Pa is affected by the space charge effect, the electron beam diameter expands, the power density decreases, and the deposition rate decreases.
- the atmospheric particles increase, which causes collisions with the electron beam and evaporated material, resulting in a decrease in the deposition rate.
- the deposition pressure of 1.0E-02Pa is appropriate for the electron beam dose.
- the present invention is not limited to MgO vapor deposition but can be applied to a vapor deposition apparatus using a piercing electron gun.
- the container for depositing the vapor deposition material is provided with phosphorus.
- a crucible may be used.
- the present invention can be employed as a method for forming a metal oxide film such as a SiO film or a TiO film in addition to a method for forming an MgO film.
- the method for forming a vapor-deposited film according to the present invention can be adopted as a method for forming a metal film such as an A1 film.
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/446,584 US8198797B2 (en) | 2006-10-23 | 2007-10-18 | Method of controlling electron beam focusing of pierce-type electron gun and control apparatus therefor |
KR1020097005596A KR101112692B1 (ko) | 2006-10-23 | 2007-10-18 | 피어스식 전자총의 전자빔 집속 제어방법 및 제어장치 |
CN2007800385106A CN101529550B (zh) | 2006-10-23 | 2007-10-18 | 皮尔斯电子枪的电子束聚焦的控制方法及控制装置 |
JP2008540958A JP4888793B2 (ja) | 2006-10-23 | 2007-10-18 | ピアス式電子銃の電子ビーム集束の制御方法及び制御装置 |
EP07830086.0A EP2077574B1 (en) | 2006-10-23 | 2007-10-18 | Method of controlling electron beam focusing of pierce type electron gun and control device therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-287658 | 2006-10-23 | ||
JP2006287658 | 2006-10-23 |
Publications (1)
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WO2008050670A1 true WO2008050670A1 (en) | 2008-05-02 |
Family
ID=39324468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/070352 WO2008050670A1 (en) | 2006-10-23 | 2007-10-18 | Method of controlling electron beam focusing of pierce type electron gun and control device therefor |
Country Status (8)
Country | Link |
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US (1) | US8198797B2 (ja) |
EP (1) | EP2077574B1 (ja) |
JP (1) | JP4888793B2 (ja) |
KR (1) | KR101112692B1 (ja) |
CN (1) | CN101529550B (ja) |
RU (1) | RU2449409C2 (ja) |
TW (1) | TWI421898B (ja) |
WO (1) | WO2008050670A1 (ja) |
Cited By (6)
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JP2011040291A (ja) * | 2009-08-12 | 2011-02-24 | Ulvac Japan Ltd | 電子銃、電子銃を用いた真空処理装置 |
WO2011068101A1 (ja) * | 2009-12-04 | 2011-06-09 | 株式会社 アルバック | フィラメントの支持方法、電子銃、及び処理装置 |
WO2011090052A1 (ja) | 2010-01-20 | 2011-07-28 | 国立大学法人 東京大学 | リン酸化試薬 |
JP2013020918A (ja) * | 2011-07-14 | 2013-01-31 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
US8487534B2 (en) | 2010-03-31 | 2013-07-16 | General Electric Company | Pierce gun and method of controlling thereof |
WO2024189799A1 (ja) * | 2023-03-14 | 2024-09-19 | 株式会社ニコン | 電子ビーム制御回路、電子銃、電子光源装置、電子ビーム計測方法、及び電子ビーム軌道制御方法 |
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JP5236814B2 (ja) * | 2009-10-08 | 2013-07-17 | 株式会社アルバック | 電子銃用フィラメント及びその製造方法 |
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WO2011102122A1 (ja) * | 2010-02-22 | 2011-08-25 | 株式会社アルバック | 真空処理装置 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07258832A (ja) * | 1994-03-25 | 1995-10-09 | Toppan Printing Co Ltd | 真空蒸着装置用電子銃およびそれを備えた真空蒸着装置 |
JP2003346671A (ja) * | 2002-05-27 | 2003-12-05 | Nec Micro Hakan Kk | 電子銃 |
JP2004014226A (ja) | 2002-06-05 | 2004-01-15 | Ulvac Japan Ltd | ピアス式電子銃およびこれを備える真空蒸着装置 |
JP2004315971A (ja) * | 2003-04-03 | 2004-11-11 | Nec Plasma Display Corp | 蒸着システム、プラズマディスプレイパネルの製造方法、及び、プラズマ表示装置の製造方法 |
JP2005264204A (ja) | 2004-03-17 | 2005-09-29 | Ulvac Japan Ltd | インライン式電子ビーム蒸着装置および当該装置を用いて行う基板の表面への蒸着被膜の形成方法 |
JP2005268177A (ja) | 2004-03-22 | 2005-09-29 | Ulvac Japan Ltd | ピアス式電子銃、これを備えた真空蒸着装置およびピアス式電子銃の異常放電防止方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3467057A (en) * | 1966-07-27 | 1969-09-16 | Hitachi Ltd | Electron beam evaporator |
FR1582070A (ja) * | 1968-04-26 | 1969-09-26 | ||
US3602765A (en) * | 1969-09-02 | 1971-08-31 | Bendix Corp | Device for protection of the anode of power electron beam gun |
US4186305A (en) * | 1978-03-01 | 1980-01-29 | Union Kogaku Kabushiki Kaisha | High-temperature microscope |
JPS57130353A (en) * | 1981-02-04 | 1982-08-12 | Fujitsu Ltd | Electron gun |
US5332945A (en) * | 1992-05-11 | 1994-07-26 | Litton Systems, Inc. | Pierce gun with grading electrode |
KR100337858B1 (ko) * | 1994-10-31 | 2002-10-25 | 삼성에스디아이 주식회사 | 칼라음극선관용전자총 |
JP2787899B2 (ja) * | 1995-03-20 | 1998-08-20 | 日本電気株式会社 | 冷陰極およびこれを用いた電子銃とマイクロ波管 |
JP2861968B2 (ja) * | 1996-10-17 | 1999-02-24 | 日本電気株式会社 | 冷陰極を使用した電子銃およびマイクロ波管 |
JP3406199B2 (ja) | 1997-09-29 | 2003-05-12 | 株式会社日立製作所 | 電界放出型電子銃を備えた粒子線装置及びその加熱脱ガス方法 |
JP2001250765A (ja) * | 2000-03-07 | 2001-09-14 | Nikon Corp | 露光装置及び光源装置 |
RU2212728C2 (ru) * | 2001-09-28 | 2003-09-20 | Морев Сергей Павлович | Электронная пушка для свч-прибора о-типа |
JP2004039457A (ja) * | 2002-07-03 | 2004-02-05 | Advantest Corp | 電子ビーム生成装置、電子ビーム露光装置、及び電子ビーム制御方法 |
CN1786727A (zh) * | 2004-12-10 | 2006-06-14 | 上海永新彩色显像管股份有限公司 | 显像管中的阴极热丝测试方法 |
-
2007
- 2007-10-18 US US12/446,584 patent/US8198797B2/en not_active Expired - Fee Related
- 2007-10-18 JP JP2008540958A patent/JP4888793B2/ja active Active
- 2007-10-18 KR KR1020097005596A patent/KR101112692B1/ko active IP Right Grant
- 2007-10-18 WO PCT/JP2007/070352 patent/WO2008050670A1/ja active Application Filing
- 2007-10-18 CN CN2007800385106A patent/CN101529550B/zh not_active Expired - Fee Related
- 2007-10-18 EP EP07830086.0A patent/EP2077574B1/en active Active
- 2007-10-18 RU RU2009119458/28A patent/RU2449409C2/ru active
- 2007-10-22 TW TW096139472A patent/TWI421898B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07258832A (ja) * | 1994-03-25 | 1995-10-09 | Toppan Printing Co Ltd | 真空蒸着装置用電子銃およびそれを備えた真空蒸着装置 |
JP2003346671A (ja) * | 2002-05-27 | 2003-12-05 | Nec Micro Hakan Kk | 電子銃 |
JP2004014226A (ja) | 2002-06-05 | 2004-01-15 | Ulvac Japan Ltd | ピアス式電子銃およびこれを備える真空蒸着装置 |
JP2004315971A (ja) * | 2003-04-03 | 2004-11-11 | Nec Plasma Display Corp | 蒸着システム、プラズマディスプレイパネルの製造方法、及び、プラズマ表示装置の製造方法 |
JP2005264204A (ja) | 2004-03-17 | 2005-09-29 | Ulvac Japan Ltd | インライン式電子ビーム蒸着装置および当該装置を用いて行う基板の表面への蒸着被膜の形成方法 |
JP2005268177A (ja) | 2004-03-22 | 2005-09-29 | Ulvac Japan Ltd | ピアス式電子銃、これを備えた真空蒸着装置およびピアス式電子銃の異常放電防止方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2077574A4 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011040291A (ja) * | 2009-08-12 | 2011-02-24 | Ulvac Japan Ltd | 電子銃、電子銃を用いた真空処理装置 |
WO2011068101A1 (ja) * | 2009-12-04 | 2011-06-09 | 株式会社 アルバック | フィラメントの支持方法、電子銃、及び処理装置 |
JPWO2011068101A1 (ja) * | 2009-12-04 | 2013-04-18 | 株式会社アルバック | フィラメントの支持方法、電子銃、及び処理装置 |
WO2011090052A1 (ja) | 2010-01-20 | 2011-07-28 | 国立大学法人 東京大学 | リン酸化試薬 |
US8487534B2 (en) | 2010-03-31 | 2013-07-16 | General Electric Company | Pierce gun and method of controlling thereof |
JP2013020918A (ja) * | 2011-07-14 | 2013-01-31 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
WO2024189799A1 (ja) * | 2023-03-14 | 2024-09-19 | 株式会社ニコン | 電子ビーム制御回路、電子銃、電子光源装置、電子ビーム計測方法、及び電子ビーム軌道制御方法 |
Also Published As
Publication number | Publication date |
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CN101529550B (zh) | 2011-09-21 |
KR20090043574A (ko) | 2009-05-06 |
TWI421898B (zh) | 2014-01-01 |
JPWO2008050670A1 (ja) | 2010-02-25 |
EP2077574A1 (en) | 2009-07-08 |
KR101112692B1 (ko) | 2012-02-29 |
US8198797B2 (en) | 2012-06-12 |
JP4888793B2 (ja) | 2012-02-29 |
TW200822160A (en) | 2008-05-16 |
US20100026161A1 (en) | 2010-02-04 |
RU2009119458A (ru) | 2010-11-27 |
EP2077574B1 (en) | 2015-06-17 |
EP2077574A4 (en) | 2014-04-30 |
CN101529550A (zh) | 2009-09-09 |
RU2449409C2 (ru) | 2012-04-27 |
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