WO2007034575A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- WO2007034575A1 WO2007034575A1 PCT/JP2005/024031 JP2005024031W WO2007034575A1 WO 2007034575 A1 WO2007034575 A1 WO 2007034575A1 JP 2005024031 W JP2005024031 W JP 2005024031W WO 2007034575 A1 WO2007034575 A1 WO 2007034575A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- led chip
- light
- heat transfer
- transfer plate
- color conversion
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000007789 sealing Methods 0.000 claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 239000012780 transparent material Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 2
- 230000002040 relaxant effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 238000000605 extraction Methods 0.000 description 13
- 229920002050 silicone resin Polymers 0.000 description 11
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Definitions
- the present invention relates to a light emitting device using an LED chip (light emitting diode chip).
- Patent Document 1 Japanese Patent Laid-Open No. 2001-85748 (hereinafter referred to as Patent Document 1) and Japanese Patent Laid-Open No. 2001-148514 (hereinafter referred to as Patent Document 2) disclose LED chips.
- a light-emitting device with a sealing part made of a translucent material (for example, transparent resin such as epoxy resin, silicone resin) that seals the bonding wire connected to the LED chip is doing.
- a translucent material for example, transparent resin such as epoxy resin, silicone resin
- the frame body described in Patent Documents 1 and 2 is formed in a shape in which the opening area gradually increases as the distance from the circuit board increases, and the inner side surface is a mirror surface, which reflects the light emitted by the LED chip force. It also serves as a reflector.
- the light emitted from the side force of the LED chip may be absorbed by the circuit board or may be emitted through the joint between the frame and the circuit board. There was room for improvement in efficiency.
- the present invention has been made in view of the above reasons, and an object thereof is to provide a light-emitting device capable of improving light output.
- a light-emitting device includes an LED chip, a heat transfer plate that also has a heat conductive material power and on which the LED chip is mounted, and a flat plate shape that is larger than the LED chip and smaller than the heat transfer plate. And a sub-mount member that is disposed between the LED chip and the heat transfer plate and relieves stress acting on the LED chip due to a difference in linear expansion coefficient between the LED chip and the heat transfer plate; The LED chip is laminated on the heat transfer plate and on the surface opposite to the heat transfer plate side.
- a pair of lead patterns that are electrically connected to both electrodes of the substrate, an insulating substrate having a through-hole that exposes the submount member, and an elastic LED substrate made of a translucent material.
- the reflective film has a reflective film, and the thickness of the submount member is set such that the surface of the reflective film is further away from the heat transfer plate than the surface of the insulating substrate.
- the submount member has the reflective film, and the thickness of the submount member is such that the surface of the reflective film is farther from the heat transfer plate than the surface of the insulating substrate. Therefore, it is possible to prevent the side force of the LED chip from being absorbed by the surface of the submount member or the side surface of the insulating substrate, and improve the light extraction efficiency to the outside. can do.
- the light output can be improved by improving the light extraction efficiency.
- the surface of the insulating substrate is often provided with a metal frame that reflects the light of the LED chip, a color conversion member that converts the color of light emitted from the LED chip cover, and the like.
- a metal frame that reflects the light of the LED chip
- a color conversion member that converts the color of light emitted from the LED chip cover
- the thickness of the submount member is set such that the surface of the reflective film is further away from the heat transfer plate than the surface on the insulating substrate side, such a member is provided on the surface of the insulating substrate.
- light can be prevented from being emitted through the joint between the member and the insulating substrate, the light extraction efficiency to the outside can be improved, and the color unevenness of the light can be reduced.
- each of the LED chip and the submount member has a square shape in plan view, and each side in the plan view of the LED chip is either one of a pair of diagonal lines of the submount member.
- the submount member is disposed at the center of the submount member so as to cross the diagonal line.
- the light-emitting device further includes a frame body that surrounds the submant member and the LED chip on a surface of the insulating substrate, and the sealing section is formed on the inner side of the frame body.
- the frame is made of a transparent resin molded product.
- the size of the sealing portion can be determined by the frame.
- the frame body is made of a transparent resin molded product, it is possible to reduce the difference in linear expansion coefficient between the frame body and the sealing portion compared to the case where the frame body is formed of a metal material as in the past. It is possible to suppress the generation of voids in the sealing portion at the low temperature of the heat cycle test. In addition, since it is possible to suppress the occurrence of light reflection loss in the frame, the light output can be improved.
- one electrode is formed on one surface side and the other electrode is formed on the other surface side, and the electrode on the submant member side of both electrodes is the submount member.
- the electrode on the side opposite to the submount member side is directly connected to the other bonding wire, and the other bonding wire is connected to the bonding wire of the LED chip. It extends in the direction along one diagonal.
- the light emitted from the side surface force of the LED chip is blocked by the bonding wire, so that a decrease in light extraction efficiency due to the bonding wire can be suppressed.
- the light-emitting device further includes a fluorescent material that is excited by light emitted from the LED chip and transmitted through the sealing portion, and emits light having a color different from the light emission color of the LED chip.
- a dome-shaped color conversion member disposed on the insulating substrate so as to cover the lens, and the color conversion member includes the color conversion member and a light emission surface of the lens. It arrange
- the color conversion member By providing the color conversion member, it is possible to emit light having a color different from the emission color of the LED chip. Further, by arranging the color conversion member so that an air layer is formed between the color conversion member and the light emitting surface of the lens, the color conversion member is generated when an external force is applied to the color conversion member. The transmitted stress can be suppressed from being transmitted to the LED chip through the lens and the sealing portion. Further, the light emitted from the LED chip and incident on the color conversion member through the sealing portion and the lens and scattered by the phosphor particles in the color conversion member is scattered to the lens side and scattered to the lens side. As a result, the light extraction efficiency of the entire device can be improved. In addition, moisture in the external atmosphere reaches the LED chip. Further, the color conversion member is connected to the label. As a result, it is possible to suppress a decrease in yield due to the dimensional accuracy and positioning accuracy of the color conversion member.
- FIG. 1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
- FIG. 2 is an exploded perspective view with a part broken away.
- FIG. 3 is a plan view of the main part of the above.
- FIG. 4 is a perspective view of the submount member same as above.
- FIG. 5A is an explanatory diagram of the main part of the above.
- FIG. 5B is an explanatory diagram of the main part of the above.
- FIG. 6 is a cross-sectional view of another configuration example same as above.
- FIG. 7 is a cross-sectional view of another configuration example same as above.
- the light emitting device 1 of the present embodiment includes an LED chip 10, a mounting board 20 on which the LED chip 10 is mounted, and a mounting board.
- the LED chip 10 and the LED chip 10 are formed by filling the frame 40 surrounding the LED chip 10 on the mounting surface side of the LED chip 10 in 20 and filling the inside of the frame 40 with a translucent material (transparent resin material).
- the sealing portion 50 that seals the bonding wire 14 connected to the lens and has elasticity, the lens 60 disposed on the sealing portion 50, and the light emitted from the LED chip 10 and transmitted through the sealing portion 50
- a dome-shaped color that is formed on the mounting substrate 20 so as to cover the lens 60 by molding a phosphor that is excited and emits light of a color different from the emission color of the LED chip 10 together with a transparent material.
- the conversion member 70 is provided.
- the light-emitting device 1 of the present embodiment is used as a light source of a lighting fixture, for example, and is a metal (for example, a metal having a high thermal conductivity such as Al or Cu) through an insulating layer 90 made of a green sheet, for example. It is mounted on the instrument body 100 made of). By mounting on the metal device body 100, the thermal resistance from the LED chip 10 to the device body 100 can be reduced, and the heat dissipation is improved. Moreover, since the temperature rise of the junction temperature of the LED chip 10 can be suppressed, the input power can be increased and the light output can be increased.
- the light emitting device 1 is used as an illuminator. When used as a tool, a plurality of light emitting devices 1 may be mounted on the instrument body 100 so that a desired light output can be obtained, and the plurality of light emitting devices 1 may be connected in series or in parallel.
- the mounting substrate 20 includes a metal plate 21 and an insulating substrate 22 having a glass epoxy substrate force laminated on the metal plate 21.
- the insulating substrate 22 has a pair of lead patterns 23 electrically connected to both electrodes (not shown) of the LED chip 10 on the surface opposite to the metal plate 21 side.
- a through hole 24 for exposing a submount member 30 to be described later is provided.
- Cu is used as the material of the metal plate 21, but it is not limited to Cu as long as it is a metal material having a relatively high thermal conductivity, and A1 or the like may be used.
- the metal plate 21 also has a heat conductive material force and constitutes a heat transfer plate on which the LED chip 10 is mounted.
- the metal plate 21 and the insulating substrate 22 are fixed by a fixing material 25 having an insulating sheet-like adhesive film force.
- a fixing material 25 having an insulating sheet-like adhesive film force.
- a metal layer for bonding is provided on the metal plate 21 side of the insulating substrate 22, and the insulating substrate 22 and the metal plate 21 may be fixed via the metal layer for bonding. Good.
- Each lead pattern 23 is composed of a laminated film of a Ni film and an Au film, and constitutes a partial force S inner lead portion 23a provided on the inner side of the frame body 40, and a color conversion member 70 The part not covered with the outer lead portion 23b.
- Each lead pattern 23 is not limited to a laminated film of a Ni film and an Au film, but may be composed of a laminated film of a Cu film, a Ni film, and an Ag film, for example.
- the LED chip 10 is a GaN-based blue LED chip that emits blue light, and its planar shape is formed in a square shape.
- This LED chip 10 uses a conductive substrate 11 made of an n-type SiC substrate that is close to the lattice constant and crystal structure power GaN and has conductivity compared to the sapphire substrate as the substrate for crystal growth.
- a force sword electrode (n electrode) (not shown) that is an electrode on the force sword side is formed on the back surface of the conductive substrate 11, and the surface of the light emitting part 12 (the outermost surface on the main surface side of the conductive substrate 11) is formed.
- the LED chip 10 has an anode electrode on one surface side and a force sword battery on the other surface side. Has poles.
- the force sword electrode and the anode electrode are formed of a laminated film of a Ni film and an Au film, but the materials of the force sword electrode and the anode electrode are particularly limited. Any material that has good ohmic characteristics (for example, A1) can be used.
- the LED chip 10 is mounted on the metal plate 21 so that the light emitting portion 12 of the LED chip 10 is further away from the metal plate 21 than the conductive substrate 11.
- the LED chip 10 may be mounted on the metal plate 21 so that is closer to the metal plate 21 than the conductive substrate 11.
- the conductive substrate 11 and the light emitting portion 12 have the same refractive index, Even if the light emitting part 12 is arranged close to the metal plate 21, the light extraction loss will not be too large.
- the LED chip 10 is mounted on the metal plate 21 via the submount member 30 inside the through hole 24.
- the submount member 30 is formed in a rectangular plate shape that is larger than the chip size of the LED chip 10 and smaller than the metal plate 21 (here, the planar shape is a square plate), and the LED chip 10 and the metal plate.
- the stress acting on the LED chip 10 due to the difference in coefficient of linear expansion from 21 is relieved.
- the submount member 30 transfers only the heat generated in the LED chip 10 to the metal plate 21 with only the above-described stress relieving function! It has a heat conduction function!
- the heat generated in the LED chip 10 is transferred to the metal plate 21 through the submount member 30 without passing through the insulating substrate 22.
- A1N having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, but the material of the submount member 30 is not limited to A1N.
- the material has a linear expansion coefficient that is relatively close to 6H—SiC, which is the material of the conductive substrate 11, and has a relatively high thermal conductivity, for example, composite SiC, Si, or the like may be used.
- the submount member 30 has a conductor pattern 31 connected to the force sword electrode on the surface on the LED chip 10 side, and the side surface of the LED chip 10 around the conductor pattern 31. It has a reflective film (for example, a laminated film of Ni film and Ag film, A etc.) 32 that reflects the emitted light. In other words, the submount member 30 is around the bonding part of the LED chip 10. And a reflective film 32 that reflects the light emitted from the side surface of the LED chip 10. Further, the submount member 30 has a thickness, and the thickness is set so that the surface of the reflective film 32 is further away from the metal plate (heat transfer plate) 21 than the surface of the insulating substrate 22 !, The
- the reflective power 32 is provided on the submount member 30 and the thickness of the submount member 30 is set as described above so that the side force of the LED chip 10 is also emitted.
- the surface of the submount member 30 Or being absorbed by the side surface of the insulating substrate 22 or emitted through the joint between the color conversion member 70 and the insulating substrate 22, and the light extraction efficiency to the outside can be improved.
- uneven color of light can be reduced. .
- the force sword electrode is electrically connected to one lead pattern 23 via a conductor pattern 31 and a bonding wire 14 (for example, a gold fine wire, an aluminum fine wire, etc.), and the anode electrode is It is electrically connected to the other lead pattern 23 through the bonding wire 14.
- a bonding wire 14 for example, a gold fine wire, an aluminum fine wire, etc.
- the LED chip 10 is arranged at the center of the submount member 30 such that each side in plan view intersects one of the pair of diagonal lines of the submant member 30.
- the LED chip 10 and the submant member 30 have substantially the same center axis along the thickness direction, and each side in the plan view of the LED chip 10 is the one diagonal line of the submount member 30. It is arranged at an angle of approximately 45 degrees.
- each bonding wire electrically connected to the LED chip 10 has 14 forces extending in a direction along one diagonal line of the LED chip 10.
- each side force of the LED chip 10 is also blocked by the radiated optical power bonding wire 14.
- the LED chip 10 and the submount member 30 are, for example, SnPb, AuSn, SnAgCu, etc. However, it is preferable to join using lead-free solder such as AuSn or SnAgCu.
- the sealing part 50 uses silicone resin as a translucent material.
- the sealing unit 50 is not limited to silicone resin but may be acrylic resin.
- the frame body 40 has a cylindrical shape and is a molded product molded from a transparent resin.
- the frame body 40 is disposed on the insulating substrate 22 so as to surround the LED chip 10 and the submount member 30.
- the frame body 40 is formed of a silicone resin, that is, a translucent material having a linear expansion coefficient equivalent to that of the translucent material of the sealing portion 50.
- acrylic resin is used instead of silicone resin as the translucent material of the sealing portion 50, it is desirable that the frame body 40 be formed of a molded product of acrylic resin.
- the sealing portion 50 is formed by filling (potting) the light-transmitting material of the sealing portion 50 inside the frame body 40 and thermosetting. It is.
- the size of the sealing portion 50 can be determined by the frame body 40.
- the frame body 40 has the strength of a molded product of transparent resin, the difference in linear expansion coefficient between the frame body 40 and the sealing portion 50 is smaller than in the case where the frame body is formed of a metal material as in the conventional case. Therefore, it is possible to suppress the generation of voids in the sealing portion 50 at a low temperature in the heat cycle test. Further, since it is possible to suppress the occurrence of light reflection loss in the frame body 40, the light output can be improved.
- the lens 60 is composed of a biconvex lens in which each of the light incident surface 60a and the light emitting surface 60b on the sealing portion 50 side is formed in a convex curved surface shape.
- the lens 60 is a molded product made of silicone resin and has the same refractive index as that of the sealing portion 50.
- the lens 60 is not limited to a molded product of silicone resin, and may be a molded product of acrylic resin, for example.
- the light exit surface 60b is formed in a convex curved surface shape that does not totally reflect the light incident from the light entrance surface 60a at the boundary between the light exit surface 60b and the air layer 80 described above. Further, the lens 60 is disposed so as to be positioned on the center line of the light emitting unit 12 along the thickness direction of the optical axial force LED chip 10 of the lens 60.
- the color conversion member 70 emits broad yellowish light by being excited by a transparent resin material such as silicone resin and blue light emitted from the LED chip 10 and transmitted through the sealing portion 50. It is a molded product formed from a mixture obtained by mixing particulate yellow phosphor. The light radiated from the side force of the LED chip 10 also propagates through the sealing portion 50 and the air layer 80 to reach the color conversion member 70 to excite the phosphor of the color conversion member 70 or The color conversion member 70 is transmitted without colliding.
- the light emitting device 1 of the present embodiment can obtain white light from the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor cover.
- the color conversion member 70 has an inner surface 70a formed in a shape along the light output surface 60b of the lens 60, and is color-converted with the light output surface 60b in the normal direction regardless of the position of the light output surface 60b of the lens 60.
- the distance between the inner surface 70a of the member 70 is a substantially constant value. Further, the color conversion member 70 is molded so that the thickness along the normal direction is uniform.
- the color conversion member 70 is fixed to the insulating substrate 22 at the periphery of the opening through a joint (not shown) having an adhesive (eg, silicone resin, epoxy resin, etc.) force.
- the air layer 80 is formed between the color conversion member 70 and the light emitting surface 60b of the lens 60 and the frame body 40.
- the air layer 80 is formed between the color conversion member 70 and the lens 60, the air layer 80 is emitted from the LED chip 10 and enters the color conversion member 70 through the sealing portion 50 and the lens 60.
- the amount of light scattered to the lens 60 side and transmitted through the lens 60 can be reduced, so that the entire device can capture light. Dispensing efficiency can be improved.
- the optical axis of the color conversion member 70 and the optical axis of the LED chip 10 are aligned, and the LED at the center position P of the color conversion member 70 in the optical axis direction.
- the total reflection angle at the interface between the color conversion member 70 and the air layer 80 is ⁇ a
- the color conversion member 70 and the medium outside the color conversion member 70 The angle of total reflection at the interface with a certain air is ⁇ b
- the light scattered at position P is the angle of expansion of the escape cone ECa on the inner surface 70a side of the color conversion member 70 is 2 ⁇ a
- the refractive index of the transparent material used for the color conversion member 70 is n, and the maximum emission efficiency of the blue light scattered at the position P and emitted through the escape cone ECa on the inner surface 70a side is obtained.
- the transparent material used as the material of the color conversion member 70 is not limited to silicone resin, but may be, for example, acrylic resin, epoxy resin, glass, or the like. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.
- a blue LED chip whose emission color is blue is adopted as the LED chip 10
- a SiC substrate is adopted as the conductive substrate 11.
- a GaN substrate may be used. If a SiC substrate or GaN substrate is used, the substrate for crystal growth Compared to the case where a sapphire substrate, which is an insulator, is used as the plate, the thermal conductivity of the crystal growth substrate is high and the thermal resistance of the crystal growth substrate can be reduced.
- the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green.
- the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed depending on the emission color of the LED chip 10.
- the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.
- the submount member 30 has the reflective film 32, and the thickness of the submount member is determined by the surface force of the reflective film 32 and the surface of the insulating substrate 22.
- the side force of the LED chip 10 is also absorbed by the surface of the submount member 30 and the side surface of the insulating substrate 22 because it is set so as to be farther away from the metal plate (heat transfer plate) 21 than Light can be prevented from being emitted through the joint between the color conversion member 70 and the insulating substrate 22, and the light extraction efficiency to the outside can be improved.
- the light output can be improved by improving the light extraction efficiency to the outside.
- the light emitting device 1 of the present embodiment includes the transparent resin frame 40, it does not have to include the frame 40 as shown in FIG.
- the light-emitting device 1 of the present embodiment may use a frame 40 ′ having a conventional metal material force instead of the transparent resin frame 40.
- the thickness of the submount member is set so that the surface of the reflective film 32 is further away from the metal plate (heat transfer plate) 21 than the surface of the insulating substrate 22.
- the emitted light can be prevented from being absorbed by the side surface of the insulating substrate 22 or emitted through the joint between the metal frame 40 'and the insulating substrate 22, and the light extraction can be prevented. Efficiency can be improved.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/067,194 US7956372B2 (en) | 2005-09-20 | 2005-12-28 | Light emitting device |
EP05844848.1A EP1928029B1 (en) | 2005-09-20 | 2005-12-28 | Light emitting diode package |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005272832 | 2005-09-20 | ||
JP2005-272832 | 2005-09-20 | ||
JP2005334683 | 2005-11-18 | ||
JP2005-334683 | 2005-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007034575A1 true WO2007034575A1 (ja) | 2007-03-29 |
Family
ID=37888634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/024031 WO2007034575A1 (ja) | 2005-09-20 | 2005-12-28 | 発光装置 |
Country Status (4)
Country | Link |
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US (1) | US7956372B2 (ja) |
EP (1) | EP1928029B1 (ja) |
KR (1) | KR100985452B1 (ja) |
WO (1) | WO2007034575A1 (ja) |
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EP1993151A3 (en) * | 2007-05-18 | 2010-04-07 | Kabushiki Kaisha Toshiba | Light emitting device and method of manufacturing the same |
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Also Published As
Publication number | Publication date |
---|---|
EP1928029A4 (en) | 2011-11-23 |
EP1928029A1 (en) | 2008-06-04 |
EP1928029B1 (en) | 2018-10-31 |
KR100985452B1 (ko) | 2010-10-05 |
KR20080049828A (ko) | 2008-06-04 |
US20090267093A1 (en) | 2009-10-29 |
US7956372B2 (en) | 2011-06-07 |
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