WO2006131251A1 - Dotiergemisch für die dotierung von halbleitern - Google Patents
Dotiergemisch für die dotierung von halbleitern Download PDFInfo
- Publication number
- WO2006131251A1 WO2006131251A1 PCT/EP2006/005195 EP2006005195W WO2006131251A1 WO 2006131251 A1 WO2006131251 A1 WO 2006131251A1 EP 2006005195 W EP2006005195 W EP 2006005195W WO 2006131251 A1 WO2006131251 A1 WO 2006131251A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- doping
- mixture according
- surfactants
- dopant
- alcohol
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 136
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000002019 doping agent Substances 0.000 claims description 65
- 239000004094 surface-active agent Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 49
- 239000002736 nonionic surfactant Substances 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- AFINAILKDBCXMX-PBHICJAKSA-N (2s,3r)-2-amino-3-hydroxy-n-(4-octylphenyl)butanamide Chemical compound CCCCCCCCC1=CC=C(NC(=O)[C@@H](N)[C@@H](C)O)C=C1 AFINAILKDBCXMX-PBHICJAKSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 2
- -1 fatty acid ester Chemical class 0.000 description 46
- 125000004432 carbon atom Chemical group C* 0.000 description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 25
- 125000000217 alkyl group Chemical group 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 20
- 235000014113 dietary fatty acids Nutrition 0.000 description 20
- 229930195729 fatty acid Natural products 0.000 description 20
- 239000000194 fatty acid Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 16
- 150000004665 fatty acids Chemical class 0.000 description 15
- 239000002253 acid Substances 0.000 description 14
- 150000003839 salts Chemical class 0.000 description 14
- 150000007513 acids Chemical class 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 235000011007 phosphoric acid Nutrition 0.000 description 10
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 10
- 150000001298 alcohols Chemical class 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- 125000003342 alkenyl group Chemical group 0.000 description 8
- 150000001733 carboxylic acid esters Chemical class 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 150000002191 fatty alcohols Chemical class 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 6
- WNWHHMBRJJOGFJ-UHFFFAOYSA-N 16-methylheptadecan-1-ol Chemical compound CC(C)CCCCCCCCCCCCCCCO WNWHHMBRJJOGFJ-UHFFFAOYSA-N 0.000 description 6
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- NOPFSRXAKWQILS-UHFFFAOYSA-N docosan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCCCCCO NOPFSRXAKWQILS-UHFFFAOYSA-N 0.000 description 6
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 6
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- HLZKNKRTKFSKGZ-UHFFFAOYSA-N tetradecan-1-ol Chemical compound CCCCCCCCCCCCCCO HLZKNKRTKFSKGZ-UHFFFAOYSA-N 0.000 description 6
- 150000001735 carboxylic acids Chemical class 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001767 cationic compounds Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 235000019387 fatty acid methyl ester Nutrition 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 150000002892 organic cations Chemical class 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- CFOQKXQWGLAKSK-KTKRTIGZSA-N (13Z)-docosen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCCO CFOQKXQWGLAKSK-KTKRTIGZSA-N 0.000 description 3
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 3
- DJYWKXYRGAMLRE-QXMHVHEDSA-N (z)-icos-9-en-1-ol Chemical compound CCCCCCCCCC\C=C/CCCCCCCCO DJYWKXYRGAMLRE-QXMHVHEDSA-N 0.000 description 3
- TVPWKOCQOFBNML-SEYXRHQNSA-N (z)-octadec-6-en-1-ol Chemical compound CCCCCCCCCCC\C=C/CCCCCO TVPWKOCQOFBNML-SEYXRHQNSA-N 0.000 description 3
- CFOQKXQWGLAKSK-UHFFFAOYSA-N 13-docosen-1-ol Natural products CCCCCCCCC=CCCCCCCCCCCCCO CFOQKXQWGLAKSK-UHFFFAOYSA-N 0.000 description 3
- 244000060011 Cocos nucifera Species 0.000 description 3
- 235000013162 Cocos nucifera Nutrition 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000000129 anionic group Chemical group 0.000 description 3
- 229960000541 cetyl alcohol Drugs 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 229960000735 docosanol Drugs 0.000 description 3
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229940043348 myristyl alcohol Drugs 0.000 description 3
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 3
- ALSTYHKOOCGGFT-MDZDMXLPSA-N oleyl alcohol Chemical compound CCCCCCCC\C=C\CCCCCCCCO ALSTYHKOOCGGFT-MDZDMXLPSA-N 0.000 description 3
- 229940055577 oleyl alcohol Drugs 0.000 description 3
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 3
- 238000006384 oligomerization reaction Methods 0.000 description 3
- 125000004043 oxo group Chemical group O=* 0.000 description 3
- 150000003138 primary alcohols Chemical class 0.000 description 3
- 238000006268 reductive amination reaction Methods 0.000 description 3
- 238000007142 ring opening reaction Methods 0.000 description 3
- 239000011877 solvent mixture Substances 0.000 description 3
- 150000003460 sulfonic acids Chemical class 0.000 description 3
- XUJLWPFSUCHPQL-UHFFFAOYSA-N 11-methyldodecan-1-ol Chemical compound CC(C)CCCCCCCCCCO XUJLWPFSUCHPQL-UHFFFAOYSA-N 0.000 description 2
- XDOFQFKRPWOURC-UHFFFAOYSA-N 16-methylheptadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCCCC(O)=O XDOFQFKRPWOURC-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- SRBFZHDQGSBBOR-IOVATXLUSA-N D-xylopyranose Chemical compound O[C@@H]1COC(O)[C@H](O)[C@H]1O SRBFZHDQGSBBOR-IOVATXLUSA-N 0.000 description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 239000004435 Oxo alcohol Substances 0.000 description 2
- 235000019482 Palm oil Nutrition 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229920013808 TRITON DF-16 Polymers 0.000 description 2
- 230000010933 acylation Effects 0.000 description 2
- 238000005917 acylation reaction Methods 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000003973 alkyl amines Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 239000003240 coconut oil Substances 0.000 description 2
- 235000019864 coconut oil Nutrition 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- SEGLCEQVOFDUPX-UHFFFAOYSA-N di-(2-ethylhexyl)phosphoric acid Chemical compound CCCCC(CC)COP(O)(=O)OCC(CC)CCCC SEGLCEQVOFDUPX-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZQPPMHVWECSIRJ-MDZDMXLPSA-N elaidic acid Chemical compound CCCCCCCC\C=C\CCCCCCCC(O)=O ZQPPMHVWECSIRJ-MDZDMXLPSA-N 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- 238000006266 etherification reaction Methods 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000008103 glucose Substances 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- SIOLDWZBFABPJU-UHFFFAOYSA-N isotridecanoic acid Chemical compound CC(C)CCCCCCCCCC(O)=O SIOLDWZBFABPJU-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 150000002924 oxiranes Chemical class 0.000 description 2
- 125000006353 oxyethylene group Chemical group 0.000 description 2
- 239000003346 palm kernel oil Substances 0.000 description 2
- 239000002540 palm oil Substances 0.000 description 2
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 description 2
- CNVZJPUDSLNTQU-SEYXRHQNSA-N petroselinic acid Chemical compound CCCCCCCCCCC\C=C/CCCCC(O)=O CNVZJPUDSLNTQU-SEYXRHQNSA-N 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 239000003760 tallow Substances 0.000 description 2
- 150000004072 triols Chemical class 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- GGQQNYXPYWCUHG-RMTFUQJTSA-N (3e,6e)-deca-3,6-diene Chemical compound CCC\C=C\C\C=C\CC GGQQNYXPYWCUHG-RMTFUQJTSA-N 0.000 description 1
- CUXYLFPMQMFGPL-WPOADVJFSA-N (9Z,11E,13E)-octadeca-9,11,13-trienoic acid Chemical compound CCCC\C=C\C=C\C=C/CCCCCCCC(O)=O CUXYLFPMQMFGPL-WPOADVJFSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- IKYKEVDKGZYRMQ-PDBXOOCHSA-N (9Z,12Z,15Z)-octadecatrien-1-ol Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCCO IKYKEVDKGZYRMQ-PDBXOOCHSA-N 0.000 description 1
- WLTSXAIICPDFKI-FNORWQNLSA-N (E)-3-dodecene Chemical compound CCCCCCCC\C=C\CC WLTSXAIICPDFKI-FNORWQNLSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- PHCKFVVLVZFFLU-VQHVLOKHSA-N (e)-dodec-4-ene Chemical compound CCCCCCC\C=C\CCC PHCKFVVLVZFFLU-VQHVLOKHSA-N 0.000 description 1
- ZOKYTRIEIDWYSG-PKNBQFBNSA-N (e)-dodec-5-ene Chemical compound CCCCCC\C=C\CCCC ZOKYTRIEIDWYSG-PKNBQFBNSA-N 0.000 description 1
- JZPUSPPFVAJNGY-FYWRMAATSA-N (e)-hexadec-7-ene Chemical compound CCCCCCCC\C=C\CCCCCC JZPUSPPFVAJNGY-FYWRMAATSA-N 0.000 description 1
- KWEAIXVWPDMXCR-FOCLMDBBSA-N (e)-hexadec-8-ene Chemical compound CCCCCCC\C=C\CCCCCCC KWEAIXVWPDMXCR-FOCLMDBBSA-N 0.000 description 1
- DSZTYVZOIUIIGA-UHFFFAOYSA-N 1,2-Epoxyhexadecane Chemical compound CCCCCCCCCCCCCCC1CO1 DSZTYVZOIUIIGA-UHFFFAOYSA-N 0.000 description 1
- WGYZMNBUZFHYRX-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-ol Chemical compound COCC(C)OCC(C)O WGYZMNBUZFHYRX-UHFFFAOYSA-N 0.000 description 1
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- OXEDXHIBHVMDST-UHFFFAOYSA-N 12Z-octadecenoic acid Natural products CCCCCC=CCCCCCCCCCCC(O)=O OXEDXHIBHVMDST-UHFFFAOYSA-N 0.000 description 1
- WQURFPNPTFZWGE-UHFFFAOYSA-N 2,3-dibutyloxirane Chemical compound CCCCC1OC1CCCC WQURFPNPTFZWGE-UHFFFAOYSA-N 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- RYPKRALMXUUNKS-UHFFFAOYSA-N 2-Hexene Natural products CCCC=CC RYPKRALMXUUNKS-UHFFFAOYSA-N 0.000 description 1
- MPGABYXKKCLIRW-UHFFFAOYSA-N 2-decyloxirane Chemical compound CCCCCCCCCCC1CO1 MPGABYXKKCLIRW-UHFFFAOYSA-N 0.000 description 1
- QBJWYMFTMJFGOL-UHFFFAOYSA-N 2-hexadecyloxirane Chemical compound CCCCCCCCCCCCCCCCC1CO1 QBJWYMFTMJFGOL-UHFFFAOYSA-N 0.000 description 1
- ONEKODVPFBOORO-UHFFFAOYSA-N 2-methyl lauric acid Chemical compound CCCCCCCCCCC(C)C(O)=O ONEKODVPFBOORO-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- QRUOTIJTSNETKW-UHFFFAOYSA-N 4-ethoxybutan-1-ol Chemical compound CCOCCCCO QRUOTIJTSNETKW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 240000007817 Olea europaea Species 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 235000021319 Palmitoleic acid Nutrition 0.000 description 1
- CNVZJPUDSLNTQU-UHFFFAOYSA-N Petroselaidic acid Natural products CCCCCCCCCCCC=CCCCCC(O)=O CNVZJPUDSLNTQU-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 108010009736 Protein Hydrolysates Proteins 0.000 description 1
- 235000019484 Rapeseed oil Nutrition 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical class OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- 235000019486 Sunflower oil Nutrition 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical class [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001323 aldoses Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001336 alkenes Chemical group 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- PYMYPHUHKUWMLA-UHFFFAOYSA-N arabinose Natural products OCC(O)C(O)C(O)C=O PYMYPHUHKUWMLA-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 235000015278 beef Nutrition 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004651 carbonic acid esters Chemical class 0.000 description 1
- ABDBNWQRPYOPDF-UHFFFAOYSA-N carbonofluoridic acid Chemical class OC(F)=O ABDBNWQRPYOPDF-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SECPZKHBENQXJG-UHFFFAOYSA-N cis-palmitoleic acid Natural products CCCCCCC=CCCCCCCCC(O)=O SECPZKHBENQXJG-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 239000002385 cottonseed oil Substances 0.000 description 1
- 235000012343 cottonseed oil Nutrition 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000004956 cyclohexylene group Chemical group 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000004851 dishwashing Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007700 distillative separation Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 235000019197 fats Nutrition 0.000 description 1
- 235000021323 fish oil Nutrition 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical class OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- LQJBNNIYVWPHFW-QXMHVHEDSA-N gadoleic acid Chemical compound CCCCCCCCCC\C=C/CCCCCCCC(O)=O LQJBNNIYVWPHFW-QXMHVHEDSA-N 0.000 description 1
- 229930182830 galactose Natural products 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 230000004130 lipolysis Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- WCYWZMWISLQXQU-UHFFFAOYSA-N methyl Chemical compound [CH3] WCYWZMWISLQXQU-UHFFFAOYSA-N 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 150000005451 methyl sulfates Chemical class 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002103 osmometry Methods 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 235000019865 palm kernel oil Nutrition 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003008 phosphonic acid esters Chemical class 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000003531 protein hydrolysate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000003549 soybean oil Substances 0.000 description 1
- 235000012424 soybean oil Nutrition 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 1
- 125000005420 sulfonamido group Chemical group S(=O)(=O)(N*)* 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical class S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002600 sunflower oil Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- AQWHMKSIVLSRNY-UHFFFAOYSA-N trans-Octadec-5-ensaeure Natural products CCCCCCCCCCCCC=CCCCC(O)=O AQWHMKSIVLSRNY-UHFFFAOYSA-N 0.000 description 1
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical compound OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 description 1
- 229940057402 undecyl alcohol Drugs 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 235000019871 vegetable fat Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Definitions
- the invention relates to a doping mixture for the coating of semiconductor substrates, which are then fed to a high-temperature treatment for biiming a doped layer.
- the invention further relates to a method for producing such a doping mixture and its use.
- the conductivity of semiconductors is increased by incorporating foreign atoms with a slightly higher or lower valency than the semiconductor material into its crystal structure.
- this method can be applied to all types of semiconductors, but it has become particularly important in the field of doping of silicon-based semiconductors. If, for example, pentavalent phosphorus is introduced into a crystal lattice of silicon atoms, the phosphorus atom occupies a place in the crystal lattice instead of a silicon atom. Since phosphorus has five valence electrons and only four are required for bonding with its four adjacent silicon atoms, an electron with no fixed bond remains. This electron is available without energy consumption for the power line.
- Such a doped material is called n-doped and are n-type. Accordingly, insertion of an atom of lower valence than that of the semiconductor results in an electron deficit, which also leads to an increase in conductivity.
- Such materials are called p-doped and are p-type.
- In-line diffusion has many advantages over the more widely used traditional POCl 3 methods commonly used in the prior art.
- POC I 3 is usually applied in a suitable preparation as a layer on the wafer and then thermally treated in a quartz tube furnace.
- the in-line method has a large number of advantages. The wafer is relocated less frequently, resulting in a reduced risk of wafer breakage.
- the in-line method has hitherto had several disadvantages which make it difficult to exploit the efficiency which this method can offer.
- An important step for the efficiency of a doping process is on behalf of the doping source on the semiconductor to be doped.
- Some methods for applying the semiconductor with a corresponding dopant are already used, for example, in the context of the microelectronics microelectronics industry. Examples of such processes are chemical vapor deposition (CVD), in which, for example, gaseous phosphorus (for example phosphine or phosphine) is vapor-deposited on a surface to be doped.
- CVD chemical vapor deposition
- a sol-gel a solution containing or containing phosphosilicate polymer molecules dissolved or suspended in an organic solvent
- a sol-gel a solution containing or containing phosphosilicate polymer molecules dissolved or suspended in an organic solvent
- dopant on semiconductor surfaces include, for example, dipping the wafer in a dopant solution, wherein the wafers are deposited, for example, on a corresponding conveyor belt which passes through a corresponding dopant solution. It is also possible to roll up a paste or liquid containing the corresponding dopant with a roller that comes in contact with the wafer with light pressure. Both methods have in common that forming a reproducible thin and uniform layer of the dopant on the surface is associated with extremely great difficulties.
- EP 1 414 082 A2 discloses the use of aqueous solutions with doping surfactants for doping organic and inorganic semiconductors.
- a further object of the invention is to provide a doping mixture which is homogeneously distributed on a semiconductor surface, enables a homogeneous concentration of the dopant over the semiconductor surface, which is easy to apply, for example by spray application, and with the least possible economic outlay can be carried out.
- the objects underlying the invention are achieved by a doping mixture, a method for producing such a doping mixture, a method for doping semiconductors and the use of a doping mixture, as described in the following text.
- the present invention therefore provides a dopant mixture for semiconductor doping, comprising at least one p- or n-type dopant for doping a semiconductor surface, water and a mixture of two or more surfactants, wherein at least one of the surfactants is a nonionic surfactant.
- a doping mixture according to the invention contains as dopant at least one compound which is capable of forming a p- or n-doped semiconductor surface upon appropriate thermal treatment.
- derivatives of phosphorus arsenic and antimony which are suitable in the context of a doping mixture according to the invention in an appropriate form for application to a semiconductor surface are suitable as dopants in order to achieve n-doping in silicon.
- suitable derivatives of boron, aluminum, gallium or indium are suitable for forming a small p-doping.
- a dopant mixture according to the invention contains as dopant a phosphorus source, an arsenic source or an antimony source.
- a dopant mixture according to the invention contains a phosphorus source as dopant.
- Dopants which can be used in the context of the present invention should be such that, on the one hand, they are sufficiently soluble in a doping mixture according to the invention that they can be applied as homogeneously as possible to the semiconductor surface, and, on the other hand, should the corresponding dopants be such that no premature disadvantageous effect Reaction with an ingredient of the doping mixture is carried out in a manner which has adverse effects for the doping process.
- a dopant source is used which has at least one sufficiently high polarity to be soluble in a mixture of at least 10% by weight of water and optionally a further water-miscible solvent.
- a dopant source which has a solubility in water at 23 0 C of at least 0.5 g / l, for example at least 1 g / l or 5 g / l.
- a dopant mixture according to the invention contains as dopant a water-soluble phosphorus source.
- phosphoric acid or a corresponding phosphoric acid derivative for example a suitable oligophosphoric acid or polyphosphoric acid or a phosphonic acid ester, for example phosphoric acid bis (2 ethylhexyl) ester (HDEHP) or phosphoric acid mono- or dibutyl ester, or mixtures of two or more thereof, can be used as dopant.
- HDEHP phosphoric acid bis (2 ethylhexyl) ester
- phosphoric acid mono- or dibutyl ester or mixtures of two or more thereof
- a doping mixture according to the invention also contains water.
- Water is present, for example, in an amount within the scope of the doping mixture, which is sufficient to keep the doping mixture as a whole in liquid form.
- a dopant mixture according to the invention contains water in an amount which is sufficient to keep the doping mixture as a whole sprayable.
- a dopant mixture according to the invention contains a mixture of two or more surfactants, wherein at least one of the surfactants is a nonionic surfactant.
- a "mixture of two or more surfactants” is understood as meaning a surfactant mixture which has two different properties
- a surfactant mixture according to the present text can be used for example, therefore, be referred to as a mixture, because the surfactants contained in the mixture have a different chemical structure.
- a surfactant mixture contains a surfactant prepared by a polymeric construction reaction, for example, by alkoxylation
- a surfactant need not yet be referred to as a mixture because it contains oligomers of a different chain length in the range generated by the polymeric building reaction has been.
- a surfactant mixture which contains surfactants having a basic chemical structure but a different molecular weight should only be designated as a mixture if the molecular weight distribution of the surfactants in this mixture is recognizably at least bimodal.
- a bi-modality can be recognized, for example, if, by suitable measuring methods, in particular by gel permeation chromatography (GPC), light scattering or osmometry, number average molecular weights differing by at least 100, preferably by at least 200 or by at least 500 molecular weight units from one another.
- GPC gel permeation chromatography
- a doping mixture according to the invention contains at least two surfactants which differ in their chemical composition from one another.
- At least one of the surfactants used in the context of a doping mixture according to the invention is a nonionic surfactant.
- a nonionic surfactant is a compound which, although having at least a high molecular weight polarity, but no charge.
- nonionic surfactants are, for example, fatty alcohol ethoxylates, alkylphenol ethoxylates, fatty amine ethoxylates, fatty acid ethoxylates, fatty acid ester ethoxylates, other alkoxylates, alkanolamides, sugar surfactants, amine oxides and other nonionic surfactants.
- Suitable nonionic surfactants in the context of the present invention are, for example, alkyl and alkenyl oligoglycosides, fatty acid N-alkylpolyhydroxyalkylamides, alcohol alkoxylates, alkoxylated carboxylic acid esters, preferably alkyl and alkenyl oligoglycosides.
- Alkyl and / or alkenyl oligoglycosides are known nonionic surfactants which follow formula (1),
- R is an alkyl and / or alkenyl radical having 4 to 22 carbon atoms
- G is a sugar radical having 5 or 6 carbon atoms
- z is a number from 1 to 10.
- the alkyl and / or alkenyl oligoglycosides can be derived from aldoses or ketones having 5 or 6 carbon atoms, preferably glucose.
- the preferred alkyl and / or alkenyl oligoglycosides are thus alkyl and / or alkenyl oligoglucosides.
- the index number z in the general formula (1) indicates the degree of oligomerization (DP), ie the distribution of mono- and oligoglycosides, and stands for a number between 1 and 10.
- alkyl and / or alkenyl oligoglycosides having a mean degree of oligomerization z of from 1.1 to 4.0. From an application point of view, those alkyl and / or alkenyl oligoglycosides whose degree of oligomerization is less than 1.7 and more particularly between 1.2 and 1.6 are preferred.
- the alkyl or alkenyl radical R can be derived from primary alcohols having 4 to 11, preferably 8 to 10 carbon atoms.
- Typical examples are butanol, caproic alcohol, caprylic alcohol, capric alcohol and undecyl alcohol and technical mixtures thereof, as obtained, for example, in the hydrogenation of technical fatty acid methyl esters or in the hydrogenation of aldehydes from Roelen's oxo synthesis.
- alkyl or alkenyl radical R can furthermore also be derived from primary alcohols having 12 to 22, preferably 12 to 18, carbon atoms. Typical examples are lauryl alcohol, myristyl alcohol, cetyl alcohol, palmoleyl alcohol, stearyl alcohol, isostearyl alcohol, oleyl alcohol, elaidyl alcohol, petroselinyl alcohol, arachyl alcohol, gadoleyl alcohol, behenyl alcohol, erucyl alcohol, brassidyl alcohol and technical mixtures thereof which can be obtained as described above. Preference is given to alkyl oligoglucosides based on hydrogenated C 2 / i 4 -Kokos- or Palm kernel alcohol or Cu / F fatty alcohol from coconut palm kernel or palm oil with a DP of 1 to 3.
- nonionic surfactants used in the present invention either as the sole nonionic surfactant or in combination with other nonionic surfactants are alkoxylated, preferably ethoxylated or ethoxylated and propoxylated fatty acid alkyl esters, preferably having from 1 to 4 carbon atoms in the alkyl chain, in particular fatty acid methyl ester, as described for example in Japanese Patent Application JP 58/217598 Al or which are preferably prepared according to the method described in International Patent Application WO-A-90/13533 Al.
- Nonionic surfactants of the amine oxide type for example N-cocoalkyl-N, N-dimethylamine oxide and N-tallowalkyl-N, N-dihydroxyethylamine oxide, and the fatty acid alkanolamides may also be suitable.
- nonionic surfactants are polyhydroxy fatty acid amides of the formula (II),
- R * for hydrogen, an alkyl or hydroxyalkyl radical having 1 to 4 carbon atoms
- [Z] is a linear or branched polyhydroxyalkyl radical having 3 to 10 carbon atoms and 3 to 10 hydroxyl groups.
- the polyhydroxy fatty acid amides are known substances which can usually be obtained by reductive amination of a reducing sugar with ammonia, an alkylamine or an alkanolamine and subsequent acylation with a fatty acid, a fatty acid alkyl ester or a fatty acid chloride.
- the group of polyhydroxy fatty acid amides also includes compounds of the formula (III)
- R is a linear or branched alkyl or alkenyl radical having 7 to 12 carbon atoms
- R is a linear, branched or cyclic alkyl radical or an aryl radical having 2 to 8 carbon atoms
- R 3 is a linear, branched or cyclic alkyl radical or an aryl group or an oxyalkyl group having 1 to 8 carbon atoms, wherein C I-4 - alkyl or phenyl groups being preferred
- [Z] is a linear polyhydroxyalkyl group, of which alkyl chain is substituted with at least two hydroxyl groups, or alkoxylated, preferably ethoxylated or propoxylated derivatives of this radical.
- [Z] is preferably obtained by reductive amination of a reduced sugar, for example glucose, fructose, maltose, lactose, galactose, mannose or xylose.
- a reduced sugar for example glucose, fructose, maltose, lactose, galactose, mannose or xylose.
- the N-alkoxy- or N-aryloxy-substituted compounds can then be converted into the desired polyhydroxy fatty acid amides according to the teaching of international application WO-A-95/07331 by reaction with fatty acid methyl esters in the presence of an alkoxide as catalyst.
- the polyhydroxy fatty acid amides are known substances which can usually be obtained by reductive amination of a reducing sugar with an alkylamine or an alkanolamine and subsequent acylation with a fatty acid, a fatty acid alkyl ester or a fatty acid chloride.
- a reducing sugar with an alkylamine or an alkanolamine
- acylation with a fatty acid, a fatty acid alkyl ester or a fatty acid chloride.
- fatty acid N-alkylpolyhydroxyalkylamide is the subject of a variety of publications.
- European patent application EP 0285768 A1 discloses its use as a thickening agent.
- French laid-open specification FR 1580491 A describes aqueous detergent mixtures based on sulfates and / or sulfonates, nonionic surfactants and optionally soaps which contain fatty acid N-alkylglucamides as foam regulators. Mixtures of short- and long-chain glucamides are described in German Patent DE 4400632 C1 (Henkel).
- German Offenlegungsschriften DE 4326959 AI and DE 4309567 A1 also disclose the use of glucamides with longer alkyl radicals than pseudoceramides in skin care products and also by way of combinations of glucamides with protein hydrolysates and cationic surfactants in hair care products.
- WO 92/06153 A1, WO 92/06156 A1, WO 92/06157 A1, WO 92/06158 A1, WO 92/06159 A1 and WO 92/06160 A1 are mixtures of fatty acid N Alkylglucamiden with anionic surfactants, surfactants with sulfate and / or sulfonate structure, ether carboxylic acids, ether sulfates, Methylestersulfona- th and nonionic surfactants.
- alcohol ethoxylates are also usable as nonionic surfactants. These are referred to as fatty alcohol or oxo alcohol ethoxylates and preferably follow the formula (IV),
- R '" is a linear or branched alkyl and / or alkenyl radical having 6 to 22 carbon atoms and n is a number from 1 to 50.
- Typical examples are the adducts of on average 1 to 50, preferably 5 to 40 and in particular 10 to 25 moles of caproic alcohol, caprylic alcohol, 2-ethylhexyl alcohol, capric alcohol, lauryl alcohol, isotridecyl alcohol, myristyl alcohol, cetyl alcohol, palmoleyl alcohol, stearyl alcohol, isostearyl alcohol, oleyl alcohol, elaidyl alcohol, petroselinyl alcohol, arachyl alcohol, gadoleyl alcohol, behenyl alcohol, erucyl alcohol and brassidyl alcohol and the like technical mixtures, for example, in the high-pressure hydrogenation of technical methyl esters based on fats and Oils or aldehydes from Roelen's oxosynthesis and as Monomerf
- alkoxylated carboxylic acid esters are also usable as nonionic surfactants.
- Such compounds are known in the art.
- such alkoxylated carboxylic acid esters are obtainable by esterification of alkoxylated carboxylic acids with alcohols.
- the compounds are prepared by reacting carboxylic acid esters with alkylene oxides using catalysts, in particular using calcined hydrotalcite according to German Offenlegungsschrift DE 3914131 A1, which provide compounds having a restricted homolog distribution.
- Both carbonic acid esters of monohydric alcohols and of polyhydric alcohols can be alkoxylated by this process.
- Preferred according to the present invention are alkoxylated carboxylic acid esters of monohydric alcohols which follow the general formula (V),
- R 4 CO is an aliphatic acyl radical derived from a carboxylic acid
- OAlk is alkylene oxide
- R 5 is an aliphatic alkyl radical derived from a monohydric aliphatic alcohol.
- Particularly suitable are alkoxylated carboxylic acid esters of the formula (V) in which R 4 CO is an aliphatic acyl radical having 6 to 30, preferably 6 to 22 and in particular 10 to 18 carbon atoms.
- n average numbers of 1 to 30, preferably 5 to 20 and in particular 10 to 15 and R 5 represents an aliphatic alkyl radical having 1 to 4 and preferably 1 and / or 2 carbon atoms.
- Preferred acyl radicals are derived from carboxylic acids having 6 to 22 carbon atoms of natural or synthetic origin, especially linear, saturated and / or unsaturated fatty acids including technical mixtures thereof, as obtainable by lipolysis from animal and / or vegetable fats and oils, for example from coconut oil, palm kernel oil, palm oil, soybean oil, sunflower oil, rapeseed oil, cotton seed oil, fish oil, beef tallow and lard.
- carboxylic acids examples include caproic acid, caprylic acid, 2-ethylhexanoic acid, capric acid, lauric acid, isotridecanoic acid, myristic acid, palmitic acid, palmitoleic acid, stearic acid, isostearic acid, oleic acid, elaidic acid, petroselinic acid, linoleic acid, linolenic acid, elaeostearic acid, arachic acid, gadoleic acid, behenic acid and / or erucic acid
- Preferred alkyl radicals are derived from primary, aliphatic monofunctional alcohols having 1 to 4 carbon atoms, which may be saturated and / or unsaturated.
- suitable monoalcohols examples include methanol, ethanol, propanol, and butanol, especially methanol.
- OAlk represents the alkylene oxides which are reacted with the carboxylic acid esters and include ethylene oxide, propylene oxide and / or butylene oxide, preferably ethylene oxide and / or propylene oxide, especially ethylene oxide alone.
- the nonionic surfactants can be used in amounts of 20 to 95, preferably 50 to 80 and in particular 60 to 70 - based on the final concentration.
- hydroxymix ethers which are likewise suitable as nonionic surfactants are known nonionic surfactants having unsymmetrical ether structure and polyalkylene glycol contents, which are obtained, for example, by subjecting olefin epoxides with fatty alcohol polyglycol ethers to a ring-opening reaction.
- HME hydroxymix ethers
- Corresponding products and their use in the area of hard surface cleaning are the subject of, for example, European Patent EP 0693049 B 1 and international patent application WO 94/22800 A1 (Olive) and the publications cited therein.
- the hydroxy mixed ethers of the general formula (VI) typically follow
- R 6 is -CH (OH) -CHR 7 O (CH 2 CHR 8 O) n R 9
- R 6 is a linear or branched alkyl radical having 2 to 18, preferably 10 to 16 carbon atoms
- R 7 is hydrogen or a linear or branched alkyl radical having 2 to 18 carbon atoms
- R 8 is hydrogen or methyl
- R 9 is a linear or branched, alkyl and / or alkenyl radical having 6 to 22, preferably 12 to 18 carbon atoms and n represents numbers of 1 to 50, preferably 2 to 25 and especially 5 to 15, with the proviso that the sum of the carbon atoms in the R 6 and R 7 is at least 4 and preferably 12 to 18.
- the polar portion of the molecule may be a polyethylene glycol or a polypropylene glycol chain; Also suitable are mixed chains of PE and PP units, whether in statistical or block distribution.
- Typical examples are ring-opening products of 1,2-hexene epoxide, 2,3-hexene epoxide, 1,2-octene epoxide, 2,3-octene epoxide, 3,4-octene epoxide, 1,2-decene epoxide, 2,3-decene epoxide, 3,4 Decene epoxide, 4,5-decene epoxide, 1,2-dodecene epoxide, 2,3-dodecene epoxide, 3,4-dodecene epoxide, 4,5-dodecene epoxide, 5,6-dodecene epoxide, 1,2-tetradecenepoxide, 2,3-
- Caprolyl alcohol capryl alcohol, 2-ethylhexyl alcohol, capric alcohol, lauryl alcohol, isotridecyl alcohol, myristyl alcohol, cetyl alcohol, palmoleyl alcohol, stearyl alcohol, isostearyl alcohol, oleyl alcohol, elaidyl alcohol, petroselinyl alcohol, linolyl alcohol, linolenyl alcohol, elaeostearyl alcohol, arachyl alcohol, gadoleyl alcohol, behenyl alcohol, Erucyl alcohol and brassidyl alcohol and their technical mixtures.
- the HME are contained in the moldings in amounts of 0.1 to 20, preferably 0.5 to 8 and in particular 3 to 5 wt .-%.
- the nonionic surfactants which are particularly suitable for the purposes of the present invention are in principle capable of reducing the surface tension in an aqueous system and, in particular, of achieving a low dynamic surface tension. Dynamic surface tension is understood to mean the decrease in surface tension as a function of time.
- surfactants examples include the surfactants marketed under the name Triton, for example Triton BQ Triton CQ compounds of the Triton CF group, compounds of the Triton DF group, compounds of the Triton X series, Trition-CA, Triton N -57 or Triton X-207.
- Triton for example Triton BQ Triton CQ compounds of the Triton CF group, compounds of the Triton DF group, compounds of the Triton X series, Trition-CA, Triton N -57 or Triton X-207.
- Triton examples include Dow Chemical Corporation, Midland, Michigan.
- nonionic surfactants for example the compounds as mentioned in US 2002/0014611 A1 in paragraph [0021].
- compounds from the Triton DF series are used as nonionic surfactants, for example Triton DF-16 or Triton DF-18.
- Suitable nonionic surfactants have, for example, an HLB value of about 8 to about 14, in particular about 10 to about 13, for example about 11 to about 12.
- the pH of a 5% aqueous solution of a corresponding surfactant is preferably from about 5 to about 8, for example from about 6 to about 7.
- the equilibrium surface tension in dynes / cm is preferably from about 25 to about 36, for example from about 26 to about 35 or from about 27 to about 33 or about 28 to about 31 or about 29 to about 30.
- the dynamic surface tension in dynes / cm is about 40 to about 60, for example about 42 to about 58 or about 44 from about 56 or about 46 to about 54 or about 48 to about 52.
- the critical micelle concentration (cmc) in distilled water at 25 ° C is about 300 to about 600, for example about 350 to about 550 or about 400 to about 500 proved to be advantageous.
- Suitable nonionic surfactants preferably have a low foaming tendency and are stable in alkalis and alkaline solutions.
- a doping mixture according to the invention in the context of a preferred embodiment of the invention contains a fluorinated surfactant.
- fluorinated surfactants are for example surfactants a Q are of the general formula (R F) a (Q) t> Z wherein R f is a fluoroaliphatic radical, is 1 or 2, a linking group, and b is 1.
- R f is generally a fluorinated, preferably saturated, monovalent, non-aromatic group having at least 3 carbon atoms.
- the fluoroaliphatic radical is, for example, linearly branched or, if it has a sufficient number of carbon atoms or a sufficient size, cyclic.
- the radical R f has complete fluorination, but it is also possible that the radical still has hydrogen atoms or, for example, chlorine atoms. The latter preferably only if per 2 carbon atoms not more than 1 hydrogen atom or chlorine atom is contained in the rest.
- Particularly suitable are fluoroaliphatic radicals having from about 1 to about 12 carbon atoms.
- Q stands for a connection group which is monovalent or polyvalent.
- Q stands for an alkylene group such as methylene or ethylene, cyclohexylene, arylene or the like or for combinations of such radicals with molecular constituents which have heteroatoms, for example oxy, thio, carbonyl, Sulfonyl, sulfinyl, sulfonamido, carbonamido, ureylene, carbamato, imino and the like, and also for combinations such as sulfonamidoalkylene, carbonamidoalkyls, oxyalkylenes (eg C 2 H 4 OC 2 H 4 -), thiodialkylene (eg. C 2 H 4 SC 2 H 4 -) alkylene carbamate and the like.
- oxyalkylenes eg C 2 H 4 OC 2 H 4 -
- thiodialkylene eg. C 2 H 4 SC 2 H 4 - alkylene carba
- Z stands for a water solubility mediating polar group or such a moiety z.
- amino groups for example, NH 2 or NHR, wherein R is an alkyl radical having 1 to 4 carbon atoms, for example, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl or tert-butyl
- sulfoammonium or carboxyammonium groups poly (oxyethylene), poly (oxypropylene), carboxylates, alkoxylates, phosphates, and the like.
- fluorinated surfactants can be used which are of formula
- R f is a perfluorinated hydrocarbon radical of the structure CF 3 - (CF 2 CF 2 ) n wherein n is from 2 to about 6.
- perfluorinated alkyl ethoxylates are commercially available, for example under the name Zonyl SFO, Zonyl SFN and Zonyl SF300 (EI DuPont).
- fluorohydrocarbon surfactants include surfactants such as Zonyl SFK, DuPont amphoteric fluorosurfactant, Zonyl SF-62 anionic fluorosurfactant from DuPont, FLURAD FC 170 non-ionic fluorosurfactant from 3M Company, or FC 123 anionic fluorosurfactant from 3M Company or L-18699A , a fluorinated surfactant of Fa 3M Company.
- a dopant mixture according to the invention contains a nonionic fluorinated surfactant.
- mixtures of the ions of ionic fluorinated surfactants preferably either mixtures of the ions of cationic fluorinated surfactants or those of anionic fluorinated surfactants.
- Anionic fluorinated surfactants comprise at least one fluorine-containing hydrophobic group and at least one negative charge carrier.
- Examples of such compounds are fluorinated carboxylic acids and their salts with inorganic or organic cations, fluorinated sulfonic acids and their salts with inorganic or organic cations, fluorinated organosulfuric acids and their salts with inorganic or organic cations, fluorinated phosphinic, phosphonic or organophosphoric acids and salts thereof with inorganic or organic cations.
- perfluorocarboxylic acids and their preferably water-soluble salts such as perfluoroalkanoic acids, for example in particular perfluoroalkanoic acids of the formula CF3 (CF-i) n -000H, where n is preferably greater than or equal to 7; partially fluorinated carboxylic acids and carboxylic acid salts, such as partially fluorinated
- Alkanoic acids partially fluorinated alkenoic acids, Perfluoralkoxyalkan Acid, Perfluoralkylethylenoxyalkan Acid, Perfluoralkoxybenzoeklaren and
- Sulfide, sulfone, carboxylic acid amide, hydroxy, oxo and / or ether groups pen- containing hydrofluorocarboxylic acids and salts thereof, for example lithium-3 - [(1H, 1H, 2H, 2H-fluoroalkyl) thio] -propionate, Zonyl FSA®, DuPont);
- Perfluorosulfonic acids and their preferably water-soluble salts such as perfluoroalkanesulfonic acids of the formula: CF 3 (CFZ) m -SO 3 H with m greater than or equal to 1;
- partially fluorinated sulfonic acids and their preferably water-soluble salts such as partially fluorinated alkanesulfonic acids, e.g. Perfluoralkylethan- sulfonic acids, Perfluorpropylethansulfonklaren, partially fluorinated alkensulfonic acids, and sulfide, Carbonklamid-, hydroxy, oxo or / and
- Ether-containing partially fluorinated sulfonic acids fluorinated sulfoesters, e.g. Sulfosuccinic acid esters, perfluoroalkylsulfopropionates, perfluoroalkylsulfobutyrates and salts thereof; e.g. Perfluoroalkylethylsulfonic acid ammonium salt, Zonyl TBS® DuP ont, sodium [tartaric acid perfluoroalkylethyl diester-2-sulfonate], Fluowet SB®,
- fluorinated sulfoesters e.g. Sulfosuccinic acid esters, perfluoroalkylsulfopropionates, perfluoroalkylsulfobutyrates and salts thereof; e.g. Perfluoroalkylethylsulfonic acid ammonium salt, Zonyl TBS® DuP ont, sodium
- Clariant GmbH fluorinated organic sulfuric acids and their salts, such as perfluoroalkylated methyl sulfates, fluorinated sulfatopoly (oxyethylene;). perfluoropropoxylated sulfates and salts thereof; fluorinated phosphinic and phosphonic acids and their preferably water-soluble salts, eg Fluowet PL80 ⁇ . Hoe S 2746. Clariant GmbH, fluorinated organic phosphoric acids and their salts, such as perfluoroalkylethylphosphoric acids. Mono- and bis- (fluoroalkyl) - (ethyl) -phosphoric acids.
- a dopant mixture according to the invention contains a non-fluorinated nonionic surfactant.
- a dopant mixture according to the invention a dopant mixture according to the invention, a nonionic non-fluorinated surfactant and a fluorinated surfactant, for example a nonionic fluorinated surfactant.
- a dopant mixture according to the invention contains the dopant, for example, in an amount of 0.01 to 80 wt .-%, for example in an amount of about 0.05 to about 60 wt .-% or about 0.1 to about 50 weight percent or about 0.5 to about 40 wt.% or about 0.8 to about 30 wt.% or about 1.0 to about 20 wt.% or about 1.2 to 15 wt.% or about 1.5 to about 10 wt .-% or about 1.8 to about 8 wt .-%.
- the percentages by weight are based on the weight of the total doping weight.
- a dopant mixture according to the invention contains a mixture of at least 2 surfactants in an amount of about 0.0011 to about 20 weight percent, for example, an amount of about 0.005 to about 15 or an amount of about 0.1 to about 10 weight percent.
- this fluorinated surfactant is present in an amount of about 0.0001 to about 5 weight percent, for example, in an amount of about 0.001 to about 2 weight percent or in an amount of about 0.01 to about 1 Percent by weight, for example, in an amount of about 0.05 to about 0.8 weight percent.
- a doping mixture according to the invention contains a non-fluorinated, nonionic surfactant, this non-fluorinated nonionic surfactant, for example from about 0.001 to about 10 weight percent, for example, from about 0.01 to about 8 weight percent, or from about 0.05 to about 6 weight percent, or from about 0.1 to about 5 weight percent or in an amount of about 0.5 to about 3 weight percent.
- this non-fluorinated nonionic surfactant for example from about 0.001 to about 10 weight percent, for example, from about 0.01 to about 8 weight percent, or from about 0.05 to about 6 weight percent, or from about 0.1 to about 5 weight percent or in an amount of about 0.5 to about 3 weight percent.
- An inventive doping mixture contains water.
- a doping mixture according to the invention may contain water in an amount which alone is insufficient to make the doping mixture in a liquid state.
- a doping mixture according to the invention contains at least one further water-miscible solvent, which as a whole provides for a liquid state of aggregation of the doping mixture at at least one temperature within a range from about 0 to about 50 ° C.
- a dopant mixture according to the invention contains at least about 10% by weight, for example at least about 20% by weight, of water.
- the proportion of water in the doping mixture according to the invention may also be significantly above said values, for example at least about 30% by weight, at least about 40% by weight, at least about 50% by weight, at least about 60% by weight , at least about 70 percent or at least about 80% by weight. In many cases it has been found to be advantageous if the proportion of water is 90% by weight or more, for example at least about 95% by weight.
- the doping mixture according to the invention is liquid at room temperature, ie for example at a temperature of about 23 ° C. It is essential in the context of the present invention that the doping mixture at the application temperature, that is, for example, at a temperature in a range of about 0 to about 100 ° C, in particular within a range of about 5 to about 50 0 C or within a range of about 10 to about 40 ° C is liquid. Preferably, the viscosity of a corresponding doping mixture is within a range that allows application by spraying.
- a doping mixture according to the invention may contain, in addition to the abovementioned compounds, one or more additives.
- suitable additives are compounds which form a solvent mixture with water.
- a suitable solvent mixture consists of water and at least one alcohol.
- any mixtures of water and one or more different alcohols can be used, provided that the remaining constituents of the doping mixture can be dissolved in a sufficient amount in the solvent mixture.
- preferred alcohols have a water solubility of at least 1 g / l, but preferably at least about 10 or at least about 30 g / l.
- Suitable alcohols have 1 to about 6 OH groups, especially about 1, 2 or 3 free OH groups, which may be primary, secondary or tertiary, but are preferably primary or secondary.
- ethanol, n-propanol, isopropanol, n-butanol, isobutanol, ethylene glycol, propylene glycol, butylene glycol, diethylene glycol, dipropylene glycol, dibutylene glycol, (2-methoxymethylethoxy) propanol, glycerol are particularly suitable or trimethylolpropane or mixtures of two or more of the above-mentioned alcohols.
- ether alcohols such as can be obtained by etherification of one of the abovementioned diols or triols with one of the abovementioned monoalcohols.
- Particularly suitable are the etherification products of ethylene glycol with ethanol, propanol or butanol, in particular ethylene glycol monobutyl ether (butyl glycol).
- a mixture of at least one monoalcohol and at least one ether alcohol leads to good results.
- suitable mixtures are mixtures of ethanol, n-propanol or isopropanol or a mixture of two or more thereof and ethylene glycol monobutyl ether, propylene glycol monopropyl ether or butylene glycol monoethyl ether or a mixture of two or more thereof.
- the above compounds may already be included as part of commercially available surfactants as part of the addition of such surfactant arrive in the doping mixture in the preparation of a doping mixture according to the invention.
- a dopant mixture according to the invention can be prepared in any desired manner by mixing the individual constituents.
- the present invention therefore also provides a process for producing a doping mixture according to the invention, in which at least one p- or n-dopant for doping a semiconductor surface, water and two or more surfactants, wherein at least one of the surfactants is a nonionic surfactant, are mixed ,
- a doping mixture according to the invention contains constituents which make it possible, for example, to dissolve an essential constituent of the doping mixture (for example of the dopant itself) or improve this dissolution in a manner beneficial to the use of the doping mixture according to the invention, these constituents may be present, for example, in a suitable sequence be added before the corresponding substance to be dissolved.
- a dopant mixture according to the invention may contain, for example, dopants which are not or not sufficiently soluble in water itself.
- additives such as solubilizers
- these are alcohols which improve the solubility of the corresponding dopant.
- the addition of the solubilizer can take place before or after the addition of the dopant to be dissolved.
- the solubilizer or a mixture of two or more solubilizers is used before the Addition of the substance to be dissolved, for example, before the addition of the dopant occurs.
- a dopant mixture according to the invention is suitable for doping semiconductor surfaces.
- first a semiconductor surface is subjected to a doping mixture according to the invention.
- the present invention therefore also relates to a semiconductor surface which is exposed to a doping mixture according to the invention.
- the semiconductor surface is first subjected to a doping mixture according to the invention and treated at elevated temperature in a subsequent step.
- the present invention therefore also provides a method for doping a semiconductor, in which a semiconductor surface is subjected to at least one doping mixture according to the invention and the semiconductor surface is subsequently treated at elevated temperature.
- a doping mixture according to the invention can be applied to a semiconductor surface.
- these are dipping, brushing, rolling, knife coating, spin coating printing, or applying with a sponge or a sponge-like structure, for example a roll, or spraying, for example with ultrasonic or two-fluid nozzle, and the like application method, which effetbowbar with a liquid doping mixture are.
- any spraying method by which a doping mixture according to the invention can be applied to a semiconductor surface is suitable.
- a spray device which sprays with the use of ultrasound is used to apply the doping mixture.
- Corresponding devices are known to the person skilled in the art.
- the flow rates are very low adjustable in an ultrasonic method, so that very thin dopant mixture layers can be achieved.
- the ultrasonic method is characterized in that very low drop speeds can be achieved and thus a shaping of the spray after the exit, for example by external air jets, is possible.
- a shaping of the spray after the exit for example by external air jets, is possible.
- such shaping of the spray increases the yield of the process since almost all of the sprayed substance can be accurately placed on the semiconductor surface. This minimizes the so-called overspray and improves the homogeneity of the layer.
- the application of ultrasound spraying to the semiconductor surface takes place.
- the application of the dopant mixture layer can be done on one side or, if a two-sided doping is desired, on two sides.
- the semiconductor surface can be dried, for example. This can be done for example in a continuous dryer or in a special zone of a diffusion furnace. It is also possible in the context of the present invention that the drying step is eliminated.
- the coated semiconductor surface can be thermally treated in a corresponding diffusion furnace, for example a continuous furnace or a tube furnace.
- a continuous furnace for example, the disc-shaped semiconductors are transported in a horizontal position, in a tube furnace, the semiconductors are arranged vertically, treated for example in disc carriers.
- Another object of the invention is the use of a mixture containing at least one p- or n-type dopant for doping a semiconductor surface, water and a mixture of two or more surfactants, wherein at least one of the surfactants is a nonionic surfactant, for the preparation of doped semiconductor surfaces.
- Silicon wafers were coated in an in-line unit with a mixture of 3 wt% concentrated phosphoric acid (85%), 1 wt% Triton DF-16, 0.1 wt% Zonyl FSH (50% in dipropylene glycol monomethyl ether) and Water ad 100 wt .-% coated by ultrasonic spraying.
- the flow rate of the doping mixture was about 4 ml / min at a belt speed of about 600 mm / min during spraying.
- the wafer wetted with the dopant was completely coated, including the edge regions. There were no island-like structures. After diffusion, a homogeneity of the emitter layer resistance of 2.2 ⁇ / sq.
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2006257042A AU2006257042B2 (en) | 2005-06-06 | 2006-05-31 | Mixture for doping semiconductors |
EP06754014A EP1888822A1 (de) | 2005-06-06 | 2006-05-31 | Dotiergemisch für die dotierung von halbleitern |
JP2008515102A JP2008543097A (ja) | 2005-06-06 | 2006-05-31 | 半導体ドーピング用のドーパント混合物 |
US11/916,538 US8043946B2 (en) | 2005-06-06 | 2006-05-31 | Mixture for doping semiconductors |
NO20080047A NO20080047L (no) | 2005-06-06 | 2008-01-03 | Blanding for doping av halvledere |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005025933.2 | 2005-06-06 | ||
DE102005025933A DE102005025933B3 (de) | 2005-06-06 | 2005-06-06 | Dotiergermisch für die Dotierung von Halbleitern |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006131251A1 true WO2006131251A1 (de) | 2006-12-14 |
Family
ID=36599650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/005195 WO2006131251A1 (de) | 2005-06-06 | 2006-05-31 | Dotiergemisch für die dotierung von halbleitern |
Country Status (9)
Country | Link |
---|---|
US (1) | US8043946B2 (de) |
EP (1) | EP1888822A1 (de) |
JP (1) | JP2008543097A (de) |
KR (1) | KR20080033934A (de) |
AU (1) | AU2006257042B2 (de) |
DE (1) | DE102005025933B3 (de) |
NO (1) | NO20080047L (de) |
TW (1) | TW200703473A (de) |
WO (1) | WO2006131251A1 (de) |
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EP2316125A2 (de) * | 2008-08-20 | 2011-05-04 | Honeywell International Inc. | Phosphorhaltige dotierungsmittel und verfahren zur formung phosphordotierter regionen in halbleitersubstraten mithilfe der phosphorhaltigen dotierungsmittel |
JP2011525296A (ja) * | 2007-12-07 | 2011-09-15 | キム,ミンス | リン酸水溶液を用いた半導体p−n接合層を形成する方法およびリン酸水溶液塗布装置 |
US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
DE102011053085A1 (de) * | 2011-08-29 | 2013-02-28 | Schott Solar Ag | Verfahren zur Herstellung einer Solarzelle |
US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122125A (en) * | 1980-03-03 | 1981-09-25 | Toshiba Corp | Diffusion source for forming semiconductor junction |
JPH03122098A (ja) * | 1989-10-02 | 1991-05-24 | Mitsubishi Materials Corp | アンチモン拡散用組成物 |
JPH09181010A (ja) * | 1995-12-26 | 1997-07-11 | Tokyo Ohka Kogyo Co Ltd | ホウ素拡散用塗布液 |
JPH09181009A (ja) * | 1995-12-26 | 1997-07-11 | Tokyo Ohka Kogyo Co Ltd | ホウ素拡散用塗布液 |
JP2001053016A (ja) * | 1999-08-04 | 2001-02-23 | Toshiba Corp | 半導体装置の製造方法 |
US6695903B1 (en) * | 1999-03-11 | 2004-02-24 | Merck Patent Gmbh | Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2016962A (en) * | 1932-09-27 | 1935-10-08 | Du Pont | Process for producing glucamines and related products |
US1985424A (en) * | 1933-03-23 | 1934-12-25 | Ici Ltd | Alkylene-oxide derivatives of polyhydroxyalkyl-alkylamides |
US2703798A (en) * | 1950-05-25 | 1955-03-08 | Commercial Solvents Corp | Detergents from nu-monoalkyl-glucamines |
DK130418A (de) * | 1967-07-19 | |||
JPS58217598A (ja) * | 1982-06-10 | 1983-12-17 | 日本油脂株式会社 | 洗剤組成物 |
DE3711776A1 (de) * | 1987-04-08 | 1988-10-27 | Huels Chemische Werke Ag | Verwendung von n-polyhydroxyalkylfettsaeureamiden als verdickungsmittel fuer fluessige waessrige tensidsysteme |
DE3914131A1 (de) * | 1989-04-28 | 1990-10-31 | Henkel Kgaa | Verwendung von calcinierten hydrotalciten als katalysatoren fuer die ethoxylierung bzw. propoxylierung von fettsaeureestern |
SK25193A3 (en) * | 1990-09-28 | 1993-07-07 | Procter & Gamble | Detergent composition containing polyhydroxy fatty acid amides and alkyl ester sulfonate surfactants |
CZ382596A3 (cs) * | 1990-09-28 | 1998-04-15 | The Procter And Gamble Company | Detergentní částice |
DE69114859T2 (de) * | 1990-09-28 | 1996-10-10 | Procter & Gamble | Waschmittelzusammensetzungen mit polyhydroxyfettsäureamidtensid und polymerischen dispergiermittel. |
ATE110767T1 (de) * | 1990-09-28 | 1994-09-15 | Procter & Gamble | Polyhydroxyfettsäureamide und schaumverstärker enthaltende waschmittelzusammensetzungen. |
SK21093A3 (en) * | 1990-09-28 | 1993-10-06 | Procter & Gamble | Polyhydroxy fatty acid amide surfactants to enhace enzyme performance |
JP3119873B2 (ja) * | 1990-09-28 | 2000-12-25 | ザ、プロクター、エンド、ギャンブル、カンパニー | ポリヒドロキシ脂肪酸アミドと1種以上の追加の非イオン界面活性剤とを含有する非イオン界面活性剤系 |
CZ42493A3 (en) * | 1990-09-28 | 1994-12-15 | Procter & Gamble | Detergent composition containing amides of polyhydroxy-fatty acids and alkylalkoxyl sulfates |
US5174927A (en) * | 1990-09-28 | 1992-12-29 | The Procter & Gamble Company | Process for preparing brightener-containing liquid detergent compositions with polyhydroxy fatty acid amines |
CZ281623B6 (cs) * | 1990-09-28 | 1996-11-13 | The Procter And Gamble Co. | Čistící prostředky obsahující aniontová povrchově aktivní činidla, polyhydroxyamidy mastné kyseliny a hořčík |
GB9021217D0 (en) * | 1990-09-28 | 1990-11-14 | Procter & Gamble | Liquid detergent compositions |
DE69114716T2 (de) * | 1990-09-28 | 1996-06-13 | Procter & Gamble | Polyhydroxyfettsäureamide in schmutzabweisungsmittel enthaltenden waschmittelzusammensetzungen. |
DK0550652T3 (da) * | 1990-09-28 | 1994-10-10 | Procter & Gamble | Detergentsammensætninger indeholdende alkylethoxy-carboxylater og polyhydroxyfedtsyreamider |
DE69126880T2 (de) * | 1990-09-28 | 1998-02-19 | Procter & Gamble | Polyhydroxyfettsäureamide in polycarboxylat als gerüststoff enthaltende waschmittel |
JPH06501043A (ja) * | 1990-09-28 | 1994-01-27 | ザ、プロクター、エンド、ギャンブル、カンパニー | 漂白剤含有洗剤組成物中のポリヒドロキシ脂肪酸アミド界面活性剤 |
CA2027518A1 (en) * | 1990-10-03 | 1992-04-04 | Richard L. Tadsen | Process for preparing high density detergent compositions containing particulate ph sensitive surfactant |
AU660628B2 (en) * | 1990-10-12 | 1995-07-06 | Procter & Gamble Company, The | Process for preparing N-alkyl polyhydroxy amines and fatty acid amides therefrom in hydroxy solvents |
AU644025B2 (en) * | 1990-10-24 | 1993-12-02 | Schott Solar, Inc. | Method and apparatus for forming diffusion junctions in solar cell substrates |
JP2647304B2 (ja) * | 1992-05-22 | 1997-08-27 | 東京応化工業株式会社 | ドーパント拡散被膜形成用塗布液 |
DE4309567A1 (de) * | 1993-03-24 | 1994-09-29 | Henkel Kgaa | Detergensgemische |
US5576281A (en) * | 1993-04-05 | 1996-11-19 | Olin Corporation | Biogradable low foaming surfactants as a rinse aid for autodish applications |
DE4326959C2 (de) * | 1993-08-12 | 1995-07-06 | Henkel Kgaa | Verwendung von Fettsäure-N-alkylpolyhydroxyalkylamiden |
US5420768A (en) | 1993-09-13 | 1995-05-30 | Kennedy; John | Portable led photocuring device |
DE4400632C1 (de) * | 1994-01-12 | 1995-03-23 | Henkel Kgaa | Tensidgemische und diese enthaltende Mittel |
JP2950819B1 (ja) * | 1998-09-10 | 1999-09-20 | 直江津電子工業株式会社 | 半導体シリコン基板の製造方法 |
GB0001577D0 (en) * | 2000-01-24 | 2000-03-15 | Radioscape Ltd | Software for designing modelling or performing digital signal processing |
US6506806B2 (en) * | 2000-06-08 | 2003-01-14 | E. I. Du Pont De Nemours And Company | Reduction of surface tension |
JP3922337B2 (ja) * | 2000-08-28 | 2007-05-30 | サンケン電気株式会社 | 液状不純物源材料及びこれを使用した半導体装置の製造方法 |
JP2002075894A (ja) * | 2000-09-01 | 2002-03-15 | Sanken Electric Co Ltd | 液状不純物源材料及びこれを使用した半導体装置の製造方法 |
JP2002075893A (ja) * | 2000-09-01 | 2002-03-15 | Sanken Electric Co Ltd | 液状不純物源材料及びこれを使用した半導体装置の製造方法 |
JP2003218048A (ja) * | 2002-01-21 | 2003-07-31 | Sanken Electric Co Ltd | 液状不純物源材料及びこれを使用した拡散領域形成方法 |
JP2003218049A (ja) * | 2002-01-21 | 2003-07-31 | Sanken Electric Co Ltd | 液状不純物源材料及びこれを使用した拡散領域形成方法 |
GB0224871D0 (en) * | 2002-10-25 | 2002-12-04 | Plastic Logic Ltd | Self-aligned doping of source-drain contacts |
-
2005
- 2005-06-06 DE DE102005025933A patent/DE102005025933B3/de not_active Expired - Fee Related
-
2006
- 2006-05-22 TW TW095118090A patent/TW200703473A/zh unknown
- 2006-05-31 KR KR1020087000318A patent/KR20080033934A/ko not_active Application Discontinuation
- 2006-05-31 WO PCT/EP2006/005195 patent/WO2006131251A1/de active Search and Examination
- 2006-05-31 AU AU2006257042A patent/AU2006257042B2/en not_active Ceased
- 2006-05-31 EP EP06754014A patent/EP1888822A1/de not_active Withdrawn
- 2006-05-31 JP JP2008515102A patent/JP2008543097A/ja active Pending
- 2006-05-31 US US11/916,538 patent/US8043946B2/en not_active Expired - Fee Related
-
2008
- 2008-01-03 NO NO20080047A patent/NO20080047L/no not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122125A (en) * | 1980-03-03 | 1981-09-25 | Toshiba Corp | Diffusion source for forming semiconductor junction |
JPH03122098A (ja) * | 1989-10-02 | 1991-05-24 | Mitsubishi Materials Corp | アンチモン拡散用組成物 |
JPH09181010A (ja) * | 1995-12-26 | 1997-07-11 | Tokyo Ohka Kogyo Co Ltd | ホウ素拡散用塗布液 |
JPH09181009A (ja) * | 1995-12-26 | 1997-07-11 | Tokyo Ohka Kogyo Co Ltd | ホウ素拡散用塗布液 |
US6695903B1 (en) * | 1999-03-11 | 2004-02-24 | Merck Patent Gmbh | Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
JP2001053016A (ja) * | 1999-08-04 | 2001-02-23 | Toshiba Corp | 半導体装置の製造方法 |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 005, no. 198 (E - 087) 16 December 1981 (1981-12-16) * |
PATENT ABSTRACTS OF JAPAN vol. 015, no. 324 (C - 0859) 19 August 1991 (1991-08-19) * |
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 11 28 November 1997 (1997-11-28) * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 19 5 June 2001 (2001-06-05) * |
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JP2011525296A (ja) * | 2007-12-07 | 2011-09-15 | キム,ミンス | リン酸水溶液を用いた半導体p−n接合層を形成する方法およびリン酸水溶液塗布装置 |
EP2316125A2 (de) * | 2008-08-20 | 2011-05-04 | Honeywell International Inc. | Phosphorhaltige dotierungsmittel und verfahren zur formung phosphordotierter regionen in halbleitersubstraten mithilfe der phosphorhaltigen dotierungsmittel |
EP2316125A4 (de) * | 2008-08-20 | 2012-02-29 | Honeywell Int Inc | Phosphorhaltige dotierungsmittel und verfahren zur formung phosphordotierter regionen in halbleitersubstraten mithilfe der phosphorhaltigen dotierungsmittel |
WO2010023225A1 (de) | 2008-08-28 | 2010-03-04 | Schott Solar Ag | Verfahren und anordnung zum herstellen einer funktionsschicht auf einem halbleiterbauelement |
DE102008044485A1 (de) | 2008-08-28 | 2010-04-01 | Schott Solar Ag | Verfahren und Anordnung zum Herstellen einer Funktionsschicht auf einem Halbleiterbauelement |
US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
DE102011053085A1 (de) * | 2011-08-29 | 2013-02-28 | Schott Solar Ag | Verfahren zur Herstellung einer Solarzelle |
US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
Also Published As
Publication number | Publication date |
---|---|
AU2006257042B2 (en) | 2011-07-14 |
AU2006257042A1 (en) | 2006-12-14 |
JP2008543097A (ja) | 2008-11-27 |
NO20080047L (no) | 2008-01-03 |
US20080314288A1 (en) | 2008-12-25 |
US8043946B2 (en) | 2011-10-25 |
KR20080033934A (ko) | 2008-04-17 |
TW200703473A (en) | 2007-01-16 |
DE102005025933B3 (de) | 2006-07-13 |
EP1888822A1 (de) | 2008-02-20 |
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