Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
  • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
  • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70216—Mask projection systems
  • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Definitions

• Exposure apparatus Exposure apparatus, exposure method, and device manufacturing method
• the present invention relates to an exposure apparatus and exposure method for exposing a substrate through a liquid, and a device manufacturing method.
• the pattern formed on the mask is projected and exposed onto a photosensitive substrate.
• An exposure apparatus is used.
• This exposure apparatus has a mask stage that can move while holding a mask, and a substrate stage that can move while holding a substrate.
• the mask pattern and the substrate stage are moved sequentially, and the pattern of the mask is projected optically. Projection exposure is performed on the substrate through the system.
• miniaturization of patterns formed on a substrate is required in order to increase the density of devices. In order to meet this demand, it is desired to further increase the resolution of the exposure apparatus.
• the optical path space of the exposure light between the projection optical system and the substrate is filled with liquid as disclosed in Patent Document 1 below, and the projection optical system and An immersion exposure apparatus has been devised that exposes a substrate through a liquid.
• Patent Document 1 Japanese Patent Laid-Open No. 2004-289126
• a gas seal is formed between a sealing member and a substrate by injecting a gas from a gas inlet in order to contain the liquid filled in the optical path space.
• the liquid is vaporized by the gas ejected from the gas inlet, and the temperature of the substrate is changed (decreased) by the heat of vaporization generated by the vaporization of the liquid.
• the substrate is thermally deformed, for example, when a pattern is transferred on the substrate.
• the overlay accuracy exposure accuracy
• the present invention has been made in view of such circumstances, and prevents leakage of the liquid filled in the optical path space of the exposure light between the optical member and the substrate, and also prevents the temperature change of the substrate. It is an object of the present invention to provide an exposure apparatus that can accurately expose a substrate and a device manufacturing method using the exposure apparatus.
• the present invention employs the following configurations corresponding to the respective drawings shown in the embodiments.
• the reference numerals in parentheses attached to each element are merely examples of the element and do not limit each element.
• the substrate (P) is irradiated with exposure light (EL) through the liquid (LQ) to expose the substrate (P), and then the substrate is exposed.
• a gas seal mechanism (3) that seals the liquid (LQ) that generates an air flow on (P) and fills the optical path space (K1) of the exposure light (EL), and a gas seal mechanism (3)
• An exposure apparatus (EX) is provided that includes a compensation mechanism (5) that compensates for temperature changes of the substrate (P) caused by the airflow.
• liquid leakage can be prevented by the gas seal mechanism, and the temperature change of the substrate caused by the airflow generated by the gas seal mechanism can be prevented by the compensation mechanism. Can be suppressed.
• the exposure apparatus that exposes the substrate (P) by irradiating the substrate (P) with the exposure light (EL) through the liquid (LQ)
• the exposure light (EL ) Optical path space (K1) with a liquid immersion mechanism (1), and a compensation mechanism (5) that compensates for temperature changes of the substrate (P) due to vaporization of the liquid (LQ).
• An exposure apparatus (EX) is provided.
• the temperature change of the substrate due to the vaporization of the liquid can be suppressed by the compensation mechanism.
• a device manufacturing method using the exposure apparatus (EX) of the first or second aspect there is provided a device manufacturing method using the exposure apparatus (EX) of the first or second aspect.
• a device can be manufactured using an exposure apparatus that can suppress a temperature change of the substrate.
• the exposure method includes exposing the substrate (P) by irradiating the substrate (P) with exposure light (EL) through the liquid (LQ), and exposing the substrate (P).
• Light (EL) optical path space (K1) is liquid (
• An exposure method is provided that compensates for temperature changes in the substrate (P) due to vaporization of the liquid (LQ).
• the temperature change of the substrate due to the vaporization of the liquid can be suppressed.
• a device manufacturing method using the exposure method of the above aspect there is provided a device manufacturing method using the exposure method of the above aspect.
• a device can be manufactured by using an exposure method that can suppress a temperature change of a substrate.
• FIG. 1 is a schematic block diagram that shows an exposure apparatus according to a first embodiment.
• FIG. 2 is a side sectional view of the vicinity of a seal member.
• FIG. 3 A view of the sealing member as viewed from below.
• FIG. 4 is a configuration diagram for explaining a liquid immersion mechanism, a gas seal mechanism, and a compensation mechanism.
• FIG. 5 is an enlarged cross-sectional view of a main part of an exposure apparatus according to a second embodiment.
• FIG. 6 is an enlarged cross-sectional view of a main part of an exposure apparatus according to a third embodiment.
• FIG. 7 is an enlarged cross-sectional view of a main part of an exposure apparatus according to a fourth embodiment.
• FIG. 8 is a diagram for explaining the relative positional relationship between the projection optical system and the substrate when the substrate is exposed.
• FIG. 9 is a diagram for explaining a temperature sensor provided on a dummy substrate.
• FIG. 10 is a flowchart showing an example of a microdevice manufacturing process.
• FIG. 1 is a schematic block diagram that shows an embodiment of the exposure apparatus EX.
• an exposure apparatus EX has a mask stage MST that can move while holding a mask M and a substrate holder PH that holds a substrate P, and a substrate stage that can move the substrate holder PH that holds the substrate P.
• PST illumination optical system IL that illuminates mask M held by mask stage MST with exposure light EL
• projection optical system PL that projects a pattern image of mask M illuminated with exposure light EL onto substrate P
• a control device CONT that controls the overall operation of the exposure apparatus EX.
• the exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to improve the resolution by substantially shortening the exposure wavelength and substantially increase the depth of focus. Then, the substrate P is exposed by irradiating the substrate P with the exposure light EL in a state where the optical path space K1 of the exposure light EL on the image plane side of the projection optical system PL is filled with the liquid LQ. Specifically, the exposure apparatus EX is held by the final optical element LSI closest to the image plane of the projection optical system PL and the substrate holder PH among the plurality of optical elements constituting the projection optical system PL.
• the exposure apparatus EX of the present embodiment has a liquid LQ liquid LQ that is larger than the projection area AR and smaller than the substrate P on a part of the substrate P including the projection area AR of the projection optical system PL.
• Immersion area A local immersion method that forms LR locally can be used.
• the exposure apparatus EX fills the optical path space K1 of the exposure light EL between the projection optical system PL and the substrate P with the liquid LQ at least while the pattern image of the mask M is transferred onto the substrate P.
• the liquid LQ immersion area LR is locally formed.
• the exposure apparatus EX includes an immersion mechanism 1 for filling the optical path space K1 of the exposure light EL with the liquid LQ, and a liquid LQ filled with the optical path space K1 of the exposure light EL.
• a gas sealing mechanism 3 for generating an air flow on the substrate P for sealing, and a compensation mechanism 5 for compensating for a temperature change of the substrate P caused by the air flow generated by the gas sealing mechanism 3 are provided. Yes.
• the gas seal mechanism 3 includes a seal member 70 provided in the vicinity of the image plane side of the projection optical system PL.
• the seal member 70 is located above the substrate P (substrate holder PH), and at least of the plurality of optical elements constituting the projection optical system PL, the closest optical element LS 1 closest to the image plane of the projection optical system PL, and It is provided in a ring around the optical path space K1!
• exposure apparatus EX a scanning exposure apparatus (so-called scanning stepper) that exposes a pattern formed on mask M onto substrate P while synchronously moving mask M and substrate P in the scanning direction.
• scanning direction the synchronous movement direction (scanning direction) of the mask M and the substrate P in the horizontal plane
• the direction orthogonal to the X axis direction is the Y axis direction (non-scanning).
• Direction the direction perpendicular to the X-axis and Y-axis directions and coincident with the optical axis
• AX of the projection optical system PL is defined as the Z-axis direction.
• the rotation (tilt) directions around the X, Y, and Z axes are defined as 0 X, ⁇ Y, and ⁇ Z directions, respectively.
• the “substrate” is a processing substrate on which various processing processes including exposure processing are performed, and a film such as a photosensitive material (resist) or a protective film is applied on a base material such as a semiconductor wafer. including.
• the “mask” includes a reticle on which a device pattern, a test pattern, and an alignment pattern to be projected on a substrate are reduced.
• the illumination optical system IL includes an exposure light source, an optical integrator that uniformizes the illuminance of the light beam emitted from the exposure light source on the mask M, a condenser lens that collects the exposure light EL from the optical integrator, and a relay lens. System, and a field stop for setting an illumination area on the mask M by exposure light EL.
• the predetermined illumination area on the mask M is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL.
• EL Light source such as bright line (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248nm) and other ultraviolet light (DUV light)
• Vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F laser light (wavelength 157 nm)
• Etc. are used.
• ArF excimer laser light is used.
• Pure water is used as the liquid LQ. Pure water is not only ArF excimer laser light, but also far ultraviolet light (DUV light) such as emission lines (g-line, h-line, i-line) emitted from mercury lamp force and KrF excimer laser light (wavelength 248nm). Can also be transmitted.
• DUV light far ultraviolet light
• Mask stage MST is movable while holding mask M.
• the mask stage MST holds the mask M by vacuum suction (or electrostatic suction).
• the mask stage MST is in a plane perpendicular to the optical axis AX of the projection optical system PL with the mask M held by the drive of the mask stage drive device MST D including the linear motor controlled by the control device CONT.
• a movable mirror 91 is provided on the mask stage MST.
• a laser interferometer 92 is provided at a position facing the movable mirror 91! The position of the mask M on the mask stage MST in the two-dimensional direction and the rotation angle in the ⁇ Z direction (including rotation angles in the ⁇ X and ⁇ Y directions in some cases) are measured in real time by the laser interferometer 92.
• the measurement result of the laser interferometer 92 is output to the control device CONT. Based on the measurement result of the laser interferometer 92, the control device CONT drives the mask stage driving device MSTD to control the position of the mask M held on the mask stage MST.
• the laser interferometer 92 may be provided to face the movable mirror 91.
• the movable mirror 91 may include not only a plane mirror but also a corner cube (retro reflector). Instead of fixing the movable mirror 91, for example, the end surface (side surface) of the mask stage MST is mirror-finished. A reflective surface may be used. Further, the mask stage MST may be configured to be capable of coarse and fine movement disclosed in, for example, Japanese Patent Laid-Open No. 8-130179 (corresponding US Pat. No. 6,721,034).
• the projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification 13 and is composed of a plurality of optical elements, which hold the lens barrel PI C.
• the projection optical system PL is a reduction system having a projection magnification j8 of, for example, 1 Z4, 1/5, or 1Z8, and forms a reduced image of the mask pattern in the projection area AR conjugate with the illumination area described above.
• the projection optical system PL may be any one of a reduction system, a unity magnification system, and an enlargement system.
• Projection optical system PL may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, or a reflective refractive system that includes a reflective optical element and a refractive optical element.
• the final optical element LSI closest to the image plane of the projection optical system PL is exposed from the lens barrel PK.
• the substrate stage PST has a substrate holder PH that holds the substrate P.
• the substrate holder PH that holds the substrate P is moved on the base member BP on the image plane side of the projection optical system PL. Is possible.
• the substrate holder PH holds the substrate P by, for example, vacuum suction.
• a recess 95 is provided on the substrate stage PST, and a substrate holder PH for holding the substrate P is disposed in the recess 95.
• the upper surface 96 of the substrate stage PST other than the recess 95 is a flat surface that is substantially the same height (level) as the surface of the substrate P held by the substrate holder PH. Note that only a part of the upper surface 96 of the substrate stage PST, for example, a predetermined region surrounding the substrate P, may have the same height as the surface of the substrate P.
• the optical path space K1 on the image plane side of the projection optical system PL can be continuously filled with the liquid LQ (that is, the immersion area LR can be satisfactorily maintained), the surface of the substrate P held by the substrate holder PH There may be a step between the board stage PST and the upper surface 96 of the PST.
• the substrate stage PST can be moved two-dimensionally in the XY plane on the base member BP by the drive of the substrate stage drive device PSTD including a linear motor controlled by the control device CONT and minute in the ⁇ Z direction. It can be rotated. Further, the substrate stage PST can move in the Z-axis direction, ⁇ X direction, and ⁇ Y direction. Therefore, the surface of the substrate P on the substrate stage PST can move in directions of six degrees of freedom in the X axis, Y axis, Z axis, 0 X, 0 Y, and 0 Z directions.
• a movable mirror 93 is provided on the side surface of the substrate stage PST.
• a laser interferometer 94 is provided at a position facing the moving mirror 93.
• the position and rotation angle of the substrate P on the substrate stage PST in the two-dimensional direction are measured in real time by the laser interferometer 94.
• the exposure apparatus EX includes an oblique incidence type focus / leveling detection system (not shown) that detects surface position information of the surface of the substrate P supported by the substrate stage PST.
• the focus leveling detection system detects surface position information (position information in the Z-axis direction and inclination information in the ⁇ X and ⁇ Y directions) of the surface of the substrate P.
• the focus / leveling detection system may employ a system using a capacitive sensor.
• the measurement result of the laser interferometer 94 is output to the control device CONT.
• the detection result of the focus leveling detection system is also output to the control device CONT.
• the control device CONT drives the substrate stage drive device PSTD based on the detection result of the focus / leveling detection system, and controls the focus position (Z position) and tilt angle ( ⁇ X, ⁇ ) of the substrate P. Throw the surface of substrate P
• the position of the substrate P is controlled in the X-axis direction, the Y-axis direction, and the ⁇ Z direction based on the measurement result of the laser interferometer 94 along with the image plane of the shadow optical system PL.
• the laser interferometer 94 for example, an optical system
• the position of the substrate stage PST (substrate P) in the Z-axis direction It is also possible to measure rotation angles in the ⁇ X and ⁇ Y directions.
• Details of the exposure apparatus equipped with a laser interferometer capable of measuring the position of the substrate stage PST in the Z-axis direction are disclosed in, for example, JP 2001-51057 7 (corresponding to International Publication No. 1999Z28790 pamphlet).
• the force force repelling detection system detects the tilt information (rotation angle) of the substrate P in the ⁇ X and ⁇ Y directions by measuring the position information of the substrate P in the Z-axis direction at each of the measurement points.
• the plurality of measurement points may be set in the immersion area LR (or the projection area AR), or all of the measurement points may be set outside the immersion area LR. Also good.
• the laser interferometer 94 can measure the position information of the substrate P in the Z-axis, ⁇ X, and ⁇ Y directions
• the position information in the Z-axis direction can be measured during the exposure operation of the substrate P.
• the position of the substrate P in the Z axis, ⁇ X and ⁇ Y directions is controlled using the measurement results of the laser interferometer 94.
• FIG. 2 is a sectional side view of the vicinity of the seal member 70
• FIG. 3 is a view of the seal member 70 as viewed from below
• FIG. 4 is for explaining the liquid immersion mechanism 1, the gas seal mechanism 3, and the compensation mechanism 5.
• the liquid immersion mechanism 1 fills the optical path space K1 of the exposure light EL with the liquid LQ, and is provided so as to face the substrate P arranged immediately below the projection optical system PL. It has a supply port 12 to be supplied, and a recovery port 22 that is provided outside the supply port 12 with respect to the optical path space K1 so as to face the substrate P and collects the liquid LQ.
• Each of the supply port 12 and the recovery port 22 is provided on the lower surface 70A of the seal member 70 facing the substrate P held by the substrate holder PH. Seal member 70 is located above substrate P (substrate holder PH).
• At least one optical element arranged on the image plane side (here, the final optical element LSI closest to the image plane of the projection optical system PL), and It is provided in an annular shape so as to surround the optical path space K1.
• the liquid immersion mechanism 1 includes a liquid supply device 10 that supplies the liquid LQ to the supply port 12 via an internal flow path (supply flow path) 14 formed inside the supply pipe 13 and the seal member 70.
• the liquid LQ on the image plane side of the projection optical system PL is connected to the recovery port 22 via an internal flow path (recovery flow path) (not shown) formed in the seal member 70 and the recovery pipe 23, and the recovery port 22
• the liquid supply apparatus 10 includes a tank that stores the liquid LQ, a pressurizing pump, a filter unit that removes foreign substances in the liquid LQ, and the like.
• the operation of the liquid supply device 10 is controlled by the control device C ONT. It should be noted that the tank, pressure pump, filter nut, etc. of the liquid supply device 10 need not all be equipped with the exposure apparatus EX, but may be replaced with facilities at the factory where the exposure apparatus EX is installed. !
• the liquid recovery apparatus 20 includes, for example, a vacuum system (suction apparatus) such as a vacuum pump, a gas-liquid separator that separates the recovered liquid LQ and gas, and a tank that stores the recovered liquid LQ. Yes.
• the operation of the liquid recovery device 20 is controlled by the control device CONT.
• the vacuum system, gas-liquid separator, tank, etc. of the liquid collection device 20 need not all be equipped with the exposure device EX, but may be replaced with facilities at the factory where the exposure device EX is installed. .
• a recess 15 is provided on each of one side (+ X side) and the other side (-X side) in the scanning direction with respect to the optical path space K1.
• the recess 15 is provided so as to extend in the Y-axis direction in plan view.
• the supply port 12 has a substantially circular shape in a plan view, and a plurality (three) of the supply ports 12 are arranged in the Y-axis direction inside the respective recesses 15 on the + X side and the X side of the lower surface 70A of the seal member 70. Is provided. Accordingly, the supply port 12 is provided on each of the one side (+ X side) and the other side (one X side) in the running direction with respect to the optical path space K1 on the lower surface 70A of the seal member 70. It is.
• the recovery port 22 of the present embodiment is provided in an annular shape so as to surround the optical path space K1 and the supply port 12 on the lower surface 70A of the seal member 70.
• the recovery port 22 has a porous member (for example, A ceramic porous body or the like or a mesh member (for example, a titanium plate mesh) is provided.
• the control device CONT drives each of the liquid supply device 10 and the liquid recovery device 20 of the liquid immersion mechanism 1.
• Control device The liquid LQ delivered from the liquid supply device 10 under the control of the CONT flows through the supply pipe 13 and then through the supply flow path 14 of the seal member 70 from the supply port 12 to the projection optical system PL. Supplied to the image side.
• the liquid recovery device 20 is driven under the control device CONT, the liquid LQ on the image plane side of the projection optical system PL flows into the recovery flow path of the seal member 70 via the recovery port 22 and is recovered. After flowing through the pipe 23, it is recovered by the liquid recovery device 20.
• the supply port 12 is disposed inside the recess 15 provided on the lower surface 70A of the seal member 70, and the liquid LQ supplied from each of the plurality of supply ports 12 is After the energy (pressure, flow velocity) is dispersed in the recess 15, it flows into the optical path space K1 between the projection optical system PL and the substrate P.
• Lower surface of seal member 70 7 Liquid LQ energy in OA may be higher near the supply port 12 than other positions, so if the recess 15 is not provided, the energy (pressure) of the liquid LQ that flows into the optical path space K1 , The flow velocity) may be non-uniform.
• a predetermined gap G1 is provided between the side surface of the final optical element LSI of the projection optical system PL and the inner side surface 70T of the seal member 70, Part of the liquid LQ filled in the optical path space K1 enters the gap G1. Further, a part of the inner edge portion of the seal member 70 is disposed between the final optical element LSI of the projection optical system PL and the substrate P, and a part of the inner side surface 70T of the seal member 70 is a final optical element. It faces the lower surface of the LSI. As shown in FIG. 3, the projection area AR of the projection optical system PL is set in a slit shape (rectangular shape) with the Y-axis direction as the longitudinal direction.
• the supply port 12 is provided on the lower surface 70A of the seal member 70.
• the supply port 12 is provided on the inner side surface 70T of the seal member 70 so as to face below the final optical element LSI. Try to supply liquid LQ by force.
• the gas seal mechanism 3 generates an air flow on the substrate P to seal the liquid LQ filled in the optical path space K1 of the exposure light EL, and is disposed immediately below the projection optical system PL.
• An injection port 32 that is provided to face the substrate P and injects a gas toward the substrate P to generate an air flow, and is located inside the injection port 32 with respect to the optical path space K1 and faces the substrate P.
• a suction port 42 for sucking gas.
• Each of the ejection port 32 and the suction port 42 is provided on the lower surface 70A of the seal member 70 facing the substrate P held by the substrate holder PH.
• the gas seal mechanism 3 includes a gas supply device 30 that supplies gas to the injection port 32 via an internal flow path (supply flow path) 34 formed inside the supply pipe 33 and the seal member 70, and a seal Is connected to the suction port 42 via an internal flow path (suction flow path) 44 and a suction pipe 43 formed inside the seal member 70, and the gas between the seal member 70 and the substrate P passes through the suction port 42.
• a gas arch I device 40 for suction includes a gas arch I device 40 for suction.
• the gas supply device 30 includes a filter unit including a chemical filter, a particle removal filter, and the like, and can supply clean gas through the filter unit.
• the gas supply device 30 supplies substantially the same gas as the gas inside the chamber in which the exposure apparatus EX is accommodated.
• the gas supply device 30 supplies air (dry air).
• the gas supplied from the gas supply device 30 may be nitrogen gas (dry nitrogen) or the like.
• the operation of the gas supply device 30 is controlled by the control device CONT.
• the gas suction device 40 is provided with a vacuum system (suction device) such as a vacuum pump, for example.
• a vacuum system suction device
• suction device such as a vacuum pump
• the operation of the gas arch I device 40 is controlled by the control device CONT.
• the lower surface 70A of the seal member 70 is provided outside the recovery port 22 with respect to the optical path space K1 so as to surround the optical path space Kl, the supply port 12, and the recovery port 22.
• An annular first groove 45 is provided on the lower surface 70 of the seal member 70.
• an annular second groove 35 is provided outside the first groove 45 with respect to the optical path space K1 so as to surround the first groove 45.
• a plurality of suction ports 42 are provided at predetermined intervals inside the first groove 45.
• a plurality of injection ports 32 are provided at predetermined intervals inside the second groove portion 35.
• a plurality of suction ports 42 are provided outside the recovery port 22 so as to surround the optical path space K1, and the ejection ports 32 are disposed outside the suction port 42.
• a plurality are provided so as to surround Kl.
• Each of the injection port 32 and the suction port 42 of the present embodiment has a substantially circular shape in plan view.
• the control device CONT drives each of the gas supply device 30 and the gas suction device 40 of the gas seal mechanism 3.
• the gas delivered from the gas supply device 30 under the control of the control device CONT flows through the supply pipe 33, and then is injected from the injection port 32 toward the substrate P through the supply flow path 34 of the seal member 70. Is done.
• the control device CONT can inject a gas from the injection port 32 at a predetermined flow rate by supplying a predetermined amount of gas per unit time from the gas supply device 30 to the injection port 32.
• the gas suction device 40 when the gas suction device 40 is driven under the control device CONT, the gas between the lower surface 70A of the seal member 70 and the surface of the substrate P passes through the suction port 42 and the suction flow path 44 of the seal member 70. Then, after flowing through the suction pipe 43, the gas is sucked into the gas suction device 40.
• the suction port 42 is provided on the inner side of the ejection port 32 with respect to the optical path space K1, and the substrate P is formed by the cooperative action of the gas ejection operation of the ejection port 32 and the gas suction operation of the suction port 42.
• a jet air force is also generated in the optical path space K1.
• the gas seal mechanism 3 can enclose the liquid LQ inside the suction port 42 by generating an airflow directed from the injection port 32 to the optical path space K1, and the projection optical system PL and the substrate P can be sealed. During this period, it is possible to prevent leakage of the liquid LQ filled in the optical path space K1 of the exposure light EL and enlargement of the immersion area LR.
• the gas seal mechanism 3 floats and supports the seal member 70 on the substrate P by the gas injected onto the substrate P from the injection port 32. That is, the gas seal mechanism 3 forms a gas bearing between the substrate P and the seal member 70 by the gas injected from the injection port 32 toward the substrate P. Thereby, as shown in FIG. 2, a predetermined gap G2 is formed between the surface of the substrate P and the lower surface 70A of the seal member 70.
• the compensation mechanism 5 compensates for the temperature change of the substrate P caused by the airflow generated by the gas seal mechanism 3.
• a part of the liquid LQ (liquid LQ filled in the optical path space K1) on the substrate P can be vaporized by the air flow generated by the gas jetted from the injection port 32 of the gas seal mechanism 3 toward the substrate P.
• the local region of the substrate P changes in temperature (decreases) due to the heat of vaporization caused by the vaporization of part of the liquid LQ due to the air flow. there is a possibility.
• the compensation mechanism 5 compensates for a local temperature drop of the substrate P due to heat of vaporization that occurs when a part of the liquid LQ is vaporized by the generated airflow.
• the compensation mechanism 5 compensates for the temperature drop of the substrate P so that the temperature of the liquid LQ supplied from the supply port 12 to the optical path space K1 is substantially equal to the temperature of the substrate P.
• the compensation mechanism 5 includes a gas temperature adjusting device 50 that is provided in the middle of the supply pipe 33 and adjusts the temperature of the gas supplied from the gas supply device 30 to the injection port 32.
• the compensation mechanism 5 includes a liquid temperature adjusting device 51 that is provided in the middle of the supply pipe 13 and adjusts the temperature of the liquid LQ supplied from the liquid supply device 10 to the supply port 12.
• the compensation mechanism 5 uses the gas temperature control device 50 to compensate the temperature change of the substrate P due to the heat of vaporization, and the temperature of the gas injected from the injection port 32 is changed to the liquid supplied from the supply port 12. Make it higher than the LQ temperature.
• Each of the gas temperature control device 50 and the liquid temperature control device 51 is controlled by the control device CONT.
• the control device CONT uses the liquid temperature control device 51 to make the temperature of the liquid LQ supplied to the optical path space K1 from the supply port 12 substantially equal to the temperature of the substrate P held by the substrate holder PH. Adjust the temperature of the liquid LQ.
• the control device CONT uses the liquid temperature control device 51 to make the temperature of the liquid LQ supplied from the supply port 12 to the optical path space K1 substantially equal to the temperature inside the chamber in which the exposure device EX is accommodated. Adjust the temperature of the liquid LQ.
• the control device CONT uses the gas temperature control device 50 to set the temperature of the gas injected from the injection port 32 to be higher than the temperature of the liquid LQ filled in the optical path space K 1 (that is, the temperature of the substrate P). To do.
• the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3, specifically, a part of the liquid LQ It is possible to compensate for the local temperature drop of the substrate P due to the heat of vaporization caused by vaporization.
• the portion of the seal member 70 that can contact the liquid LQ, the portion of the seal member 70 that faces the substrate P, and the projection optical system PL of the seal member 70 are opposed to each other.
• the part is provided with a heat insulating structure 71.
• the heat insulating structure 71 of the present embodiment is configured by a heat insulating material that forms the lower surface 70A and the inner side surface 70T of the seal member 70.
• the control device CONT uses the liquid immersion mechanism 1 to supply a predetermined amount of the liquid LQ to the optical path space K1 and collect a predetermined amount of the liquid LQ on the substrate P, thereby projecting optics.
• the optical path space K1 between the system PL and the substrate P held by the substrate holder PH is filled with the liquid LQ, and the liquid LQ immersion region LR is locally formed on the substrate P.
• the controller CONT moves the projection optical system PL and the substrate P relative to each other while the optical path space K1 is filled with the liquid LQ, and transfers the pattern image of the mask M to the projection optical system PL and the liquid LQ in the optical path space K1. Projection exposure is performed on the substrate P.
• the control device CONT uses the gas seal mechanism 3 to inject a gas having a predetermined flow velocity from the injection port 32. Then, a gas is sucked from the suction port 42, and a directional air current is generated in the optical path space K1. As a result, the liquid LQ can be contained inside the suction port 42, so that the substrate P is placed against the projection optical system PL. Even when exposure is performed while moving, the leakage of the liquid LQ can be suppressed, and the liquid immersion area LR can be prevented from becoming too large.
• the gas supply amount per unit time supplied from the gas supply device 30 to the injection port 32 may be constant or may vary. Good. Since the gas injected toward the substrate P is temperature-adjusted by the gas temperature control device 50 of the compensation mechanism 5, a part of the liquid LQ is vaporized by the air flow generated by the gas seal mechanism 3. The local temperature drop of the substrate P due to the generated heat of vaporization is compensated.
• the seal member 70 is levitated and supported on the substrate P by the gas ejected from the ejection port 32 to the substrate P, for example, the seal member 70 is placed on the image plane of the projection optical system PL during the scanning exposure of the substrate P. In order to align the surface of the substrate P with respect to the substrate P, even when the substrate P is inclined, the seal member 70 is also inclined in accordance with the inclination of the substrate P while maintaining the predetermined gap G2.
• the control device CONT controls each of the gas temperature adjusting device 50 and the liquid temperature adjusting device 51, and the temperature of the gas injected from the injection port 32 is supplied from the supply port 12.
• the temperature of the liquid LQ is higher than the temperature of the liquid LQ, but the liquid temperature adjustment device 51 is not provided in the compensation mechanism 5 and is injected from the injection port 32 based on the temperature of the liquid LQ supplied from the liquid supply device 10.
• the temperature of the gas may be adjusted. For example, by providing a temperature sensor capable of detecting the temperature of the liquid LQ supplied from the supply port 12 or the temperature of the liquid LQ filled in the optical path space K1, the control device CONT is based on the detection result of the temperature sensor. Adjust the temperature of the gas injected from the injection port 32 using the gas temperature control device 50 so that the temperature of the gas injected from the injection port 32 becomes higher than the temperature of the liquid LQ. Togashi.
• the control device CONT uses the liquid temperature control device 51 to provide The power substrate holder that adjusts the temperature of the liquid LQ so that the temperature of the liquid LQ supplied from the feed port 12 to the optical path space Kl is approximately equal to the temperature of the substrate P held by the substrate holder PH.
• a temperature control device capable of adjusting the temperature of the substrate P is provided in the PH, and the temperature of the substrate P is adjusted by using the temperature control device so that the temperature of the liquid LQ and the temperature of the substrate P are substantially equal. May be.
• the temperature of the liquid LQ and the substrate P are set so that the temperature of the liquid LQ and the temperature of the substrate P are substantially equal. Let's adjust each with the temperature.
• the substrate P is a force applied in-line from the coater 'developers'.
• the temperature adjustment plate (cool plate, etc.)
• the temperature of the entire substrate P is changed to the substrate holder. It is set to be the same as the PH temperature.
• a standby place (such as an unloading port) where the substrate P is adjusted to an appropriate temperature on the coater / developer side may be provided.
• the compensation mechanism 5 includes a blowout port 36 for blowing out gas to the outside of the injection port 32 with respect to the optical path space K1.
• a blowout port 36 for blowing out gas to the outside of the injection port 32 with respect to the optical path space K1.
• the lower surface 70A of the seal member 70 is provided with a supply port 12 for supplying the liquid LQ and a recovery port 22 for recovering the liquid LQ, as in the above-described embodiment.
• the supply port 12 is connected to the liquid supply apparatus 10 via the supply flow path and the supply pipe 13 as in the above-described embodiment, and the recovery port 22 is connected to the recovery flow path and the recovery flow. It is connected to the liquid recovery device 20 via the pipe 23.
• a suction port 42 for sucking gas is provided outside the recovery port 22 with respect to the optical path space K1, and outside the suction port 42 with respect to the optical path space K1.
• an injection port 32 for injecting gas is provided on the side.
• the suction port 42 is connected to the gas arch
• the gas temperature adjusting device 50 provided in the middle of the supply pipe 33 includes the temperature of the gas injected from the injection port 32 and the temperature of the liquid LQ filled in the optical path space K1 (substrate). The temperature of the gas is adjusted so that the temperature of P is substantially equal.
• a blowout port 36 for blowing out gas is provided outside the injection port 32 with respect to the optical path space K1.
• a second suction port 46 for sucking gas is provided outside the blow-out port 36 with respect to the optical path space K1.
• a plurality of outlets 36 are arranged in an annular groove provided so as to surround the optical path space K1 on the lower surface 70A of the seal member 70, and the second suction port 46 is also formed on the lower surface 70A of the seal member 70.
• a plurality of the grooves are arranged in an annular groove provided so as to surround the optical path space K1.
• the second suction port 46 is connected to the second gas suction device 49 via a second suction channel 47 and a second suction pipe 48 formed inside the seal member 70.
• the B outlet 36 is connected to the second gas supply device 39 via a second supply channel 37 and a second supply pipe 38 formed inside the seal member 70.
• a second gas temperature adjusting device 52 for adjusting the temperature of the gas sent from the second gas supply device 39 and blown out from the outlet 36 is provided.
• the second gas temperature control device 52 adjusts the temperature of the gas blown from the blowing port 36 to the temperature of the liquid LQ in order to compensate for the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3. Higher than.
• the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3 specifically, a part of the liquid LQ It is possible to compensate for the local temperature drop of the substrate P due to the heat of vaporization caused by the vaporization of.
• the air outlet 36, the second gas temperature control device 52, the second gas supply device 39, the second suction port 46, and the second gas suction device 49 are generated by the gas seal mechanism 3. It constitutes at least a part of the compensation mechanism 5 that compensates for the temperature change of the substrate P caused by the air flow. That is, in this embodiment, at least a part of the compensation mechanism 5 is provided separately from the gas seal mechanism 3.
• the liquid LQ is prevented from leaking by the gas injected from the injection port 32 of the gas seal mechanism 3 and the seal member 70 is supported to float on the substrate P. ing.
• the temperature change of the substrate P is compensated by the gas blown out from the blowout port 36 of the compensation mechanism 5 provided outside the injection port 32 with respect to the optical path space K1.
• the gas seal mechanism 3 can seal the liquid LQ and can inject gas from the injection port 32 at an optimum flow rate for floatingly supporting the seal member 70 on the substrate P.
• the compensation mechanism 5 can blow gas onto the substrate P at an optimum temperature and flow rate for compensating for the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3.
• the compensation mechanism 5 does not need to contribute the gas blown out from the blowout port 36 to the floating support of the seal member 70 on the substrate P. Therefore, the optimum temperature and flow rate for compensating for the temperature change of the substrate P The gas can be blown out from the air outlet 36.
• a gas having a temperature higher than the temperature of the liquid LQ and the temperature of the substrate P flows through each of the second supply channel 37 and the second suction channel 47 of the seal member 70. Therefore, a heat insulating material 71 is provided so as to surround the second supply channel 37 and the second suction channel 47. As a result, temperature changes (temperature rise) of the substrate P and the liquid LQ can be suppressed.
• the temperature of the substrate P can be adjusted by the gas blown out from the blowout port 36 whose temperature has been adjusted by the second gas temperature adjusting device 52, so that the jetting from the jetting port 32 is possible. It is also possible to omit the gas temperature adjusting device 50 for adjusting the temperature of the gas to be performed.
• the compensation mechanism 5 of the present embodiment includes a radiating unit 53 that compensates for the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3 by radiating heat toward the substrate P. Yes.
• a plurality of the radiating portions 53 are provided on a part of the lower surface 70A of the seal member 70 facing the substrate P.
• the radiating portion 53 is provided outside the ejection port 32 of the gas seal mechanism 3 with respect to the optical path space K1 on the lower surface 70A of the seal member 70.
• the radiating unit 53 is constituted by, for example, a far infrared ceramic heater.
• the heat radiated from the radiating unit 53 and the gas temperature-adjusted by the gas temperature control device 50 and injected from the injection port 32 are used in combination.
• the temperature change of the substrate P caused by the air flow generated by the sealing mechanism 3 may be compensated, or the temperature change of the substrate P may be compensated only by the heat radiated from the radiating unit 53.
• the temperature change of the substrate P may be compensated by using both the gas blown from the blow-out port 36 and the heat radiated from the radiating unit 53 as described in the second embodiment.
• the force that the radiating portion 53 is configured by a far infrared ceramic heater is not limited to this, for example, other thermoelectric elements such as a Peltier element, there is! /, A light irradiation device such as infrared light, etc. Make up with.
• the compensation mechanism 5 of this embodiment includes a holder temperature adjusting device 54 that is provided in a substrate holder PH that holds the substrate P and adjusts the temperature of the substrate P.
• the holder temperature controller 54 is a radiating part that radiates heat.
• the arbitrary region on the substrate P can be made higher than the temperature of the liquid LQ.
• the radiating section 54 constituting the holder temperature control device is constituted by, for example, a far-infrared ceramic heater or the like as in the third embodiment.
• the substrate holder PH is provided on the base material 99 of the substrate holder PH, and a plurality of pin-like members 97 that support the back surface of the substrate P, and a peripheral wall portion provided so as to surround the pin-like member 97 (Rim portion) 98 is provided, and the substrate P is adsorbed and held by applying a negative pressure to the space surrounded by the back surface of the substrate P, the base material 99, and the peripheral wall portion 98. That is, the substrate holder PH of this embodiment has a so-called pin chuck mechanism.
• the radiation portion 54 is provided at a position facing the back surface of the substrate P in the substrate holder PH. Specifically, a plurality of radiating portions 54 are embedded in the base material 99 of the substrate holder PH.
• the radiating unit 54 radiates heat toward the back surface of the substrate P to compensate for the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3.
• the substrate P can be warmed by the heat radiated from the radiating portion 54, and thus the substrate P caused by the air flow generated by the gas seal mechanism 3 is used. Temperature change (temperature decrease) can be suppressed.
• the substrate holder PH supports the back surface of the substrate P by the pin-shaped member 97, and the contact area between the substrate P and the substrate holder PH (pin-shaped member 97) is small. Even if the temperature of the holder PH itself is increased, it is difficult to warm the substrate P. Therefore, by providing the radiation portion 54 at a position facing the back surface of the substrate P and radiating heat toward the back surface of the substrate P, the temperature of the substrate P can be adjusted smoothly.
• a radiating portion 54 may be embedded in the vicinity of the upper surface 96 of the substrate stage PST.
• a predetermined process such as exposure of a shot area near the outer edge of the substrate P
• it is generated by the gas seal mechanism 3.
• the temperature change of the substrate stage PST caused by the generated air current can be compensated, and the predetermined processing can be performed smoothly.
• the relative position of each radiation portion 54 provided in the substrate holder PH and the liquid immersion region LR varies. That is, the exposure apparatus EX of the present embodiment relatively moves the substrate holder PH (substrate stage PST) holding the substrate P with respect to the optical path space K1. Since it is configured to irradiate the substrate P with the exposure light EL while moving, the liquid LQ filled in the optical path space K1, that is, the plurality of radiations embedded in the immersion region LR and the substrate stage PST (substrate holder PH) The relative position with each of the parts 54 varies.
• FIG. 8 is a diagram schematically showing the positional relationship between the projection optical system PL and the liquid immersion region LR and the substrate P when exposure is performed while relatively moving the projection optical system PL and the substrate P. .
• a plurality of shot areas S1 to S21 where the pattern of the mask M is exposed are set in a matrix.
• the control device CONT moves each of the shot areas S1 to S21 while relatively moving the optical axis AX (projection area AR) of the projection optical system PL and the substrate P. Are sequentially exposed.
• control device CONT moves the substrate P (substrate holder PH) relative to the projection optical system PL in the X-axis direction during scanning exposure of each shot area, and in the Y-axis direction during stepping between shot areas, or The substrate P is exposed while moving in both the X-axis and Y-axis directions.
• the immersion region LR is larger than the projection region AR. Therefore, for example, when the exposure light EL is irradiated to the first shot region S1, the liquid LQ in the immersion region LR is not exposed to the second, sixth, and second substrates on the substrate P. 7. Touch the 8th shot area S2, S6, S7, S8, etc. Then, the second, sixth, seventh, eighth shot regions S2, S6, S7, S8, etc. on the substrate P may change in temperature (temperature decrease) due to the heat of vaporization of the liquid LQ. When the temperature of the second, sixth, seventh, eighth shot regions S2, S6, S7, S8, etc. before exposure is lowered, the second, sixth, seventh, eighth shot regions S2, S6, Pattern overlay accuracy when exposing S7, S8, etc. may deteriorate.
• the substrate holder PH is provided with a plurality of radiation units (temperature control units) 54 corresponding to a plurality of shot regions set on the substrate P, and the control device CONT moves the substrate P in a moving state ( Position, moving speed, moving direction, moving trajectory, etc.) and the local area on the substrate P (area that is unexposed and in contact with the liquid LQ) with respect to the optical path space K1 corresponding to the moving state
• a moving state Position, moving speed, moving direction, moving trajectory, etc.
• the local area on the substrate P area that is unexposed and in contact with the liquid LQ
• each of the plurality of radiating portions 54 is controlled. That is, when the first shot region S1 is subjected to immersion exposure, the control device CONT radiates heat from the radiation part 54 provided corresponding to the first shot region S1 toward the back surface of the substrate P.
• the immersion area LR liquid Heat is applied from each of the radiating portions 54 corresponding to each of the second, sixth, seventh, and eighth shot regions S2, S6, S7, and S8 to which the body LQ comes into contact toward the back surface of the substrate P. Radiate. In this way, even if the liquid LQ comes into contact with the second, sixth, seventh, and eighth shot areas S2, S6, S7, and S8 that have not been exposed on the substrate P, the second and second The substrate P can be exposed in a state in which the temperature drop due to the heat of vaporization of the liquid LQ in the sixth, seventh, and eighth shot regions S2, S6, S7, and S8 is suppressed.
• the relationship between the movement state of the substrate P and the position of the local region on the substrate P with respect to the optical path space K1 corresponding to the movement state is determined in advance by an exposure sequence or the like, and is connected to the control device CONT.
• the stored storage device MRY can be stored in advance.
• the control device CONT corresponds to each of the shot areas S1 to S21 based on the stored information stored in the storage device MRY and the output of the laser interferometer 94 that monitors the position information of the substrate stage PST.
• Each of the plurality of radiating portions 54 provided can be controlled.
• the plurality of radiating portions 54 are provided corresponding to each of the shot areas S1 to S21, but are not necessarily provided corresponding to the shot areas S1 to S21.
• the radiating portion 54 may be provided in accordance with any divided area.
• a gas seal is formed by using in combination the heat radiated from the radiating unit 54 and the gas injected from the injection port 32 whose temperature is adjusted by the gas temperature adjusting device 50.
• the temperature change of the substrate P caused by the air flow generated by the mechanism 3 may be compensated, or the temperature change of the substrate P may be compensated only by the heat radiated from the radiating unit 54.
• the gas blown out from the outlet 36 as described in the second embodiment or the heat radiated from the radiating portion 53 provided in the seal member 70 as described in the third embodiment is used in combination.
• the temperature change of the substrate P may be compensated.
• the position and number of the radiating portions 54 to be heated, the timing and time of heating, and the like are controlled in consideration of the time delay until the heat is transferred to the substrate P.
• a forward method may be used.
• the radiating portion 54 is connected to the far infrared ceramic heater.
• another thermoelectric element such as a Peltier element, or a device for ejecting a temperature-controlled gas may be used.
• the force that the substrate holder PH is formed integrally with a part of the substrate stage PST that is, the base material 99 is a part of the substrate stage PST).
• the PST may be configured separately.
• test exposure is performed on a dummy substrate DP provided with a temperature sensor 80 as shown in FIG. 9, and the temperature at that time is set as a temperature sensor. Measured by the sensor 80, and based on the measurement result of the temperature sensor 80, when actually exposing the substrate P, the temperature of the gas ejected from the ejection port 32, the temperature of the gas blown from the ejection port 36, and the radiation part The amount of heat radiated from 53 and 54 can be optimized.
• the dummy substrate DP has substantially the same size and shape as the device manufacturing substrate P, and the substrate holder PH can hold the dummy substrate DP.
• a plurality of temperature sensors 80 are provided on the surface of the dummy substrate DP.
• the temperature sensor 80 has a plurality of sensor elements 81 provided on the surface of the dummy substrate DP.
• the sensor element 81 is composed of, for example, a thermocouple.
• the measurement part (probe) of the sensor element 81 of the temperature sensor 80 is exposed on the surface of the dummy substrate DP.
• a storage element 85 for storing the temperature measurement signal of the temperature sensor 80 is provided on the dummy substrate DP.
• the storage element 85 and the sensor element 81 are connected via a signal transmission line (cable) 83.
• the temperature measurement signal of the sensor element 81 is connected to the signal transmission line (cable) 83. Is sent to the storage element 85.
• the control device CONT can extract (read out) the temperature measurement result stored in the storage element 85.
• a semiconductor wafer may be prepared as the dummy substrate DP, and a sensor element may be directly formed thereon using a forming technique such as MEMS.
• a sensor amplifier, a communication circuit, etc. are formed on the wafer. Can be included.
• the dummy substrate DP in FIG. 9 is held by the substrate holder PH, and a gas flow is generated on the dummy substrate DP by the gas seal mechanism 3 while the liquid LQ is filled between the dummy substrate DP and the projection optical system PL.
• the control device CONT is operated by the gas seal mechanism 3. Therefore, the temperature change of the dummy substrate DP caused by the generated airflow can be obtained.
• the control device CONT for example, gas injected from the injection port 32 so that the temperature of the liquid LQ and the temperature of the dummy substrate DP are substantially equal. Is adjusted using the gas temperature control device 50, and the adjustment amount (correction amount) at that time is stored. Then, the controller CONT adjusts the temperature of the gas injected from the injection port 32 using the gas temperature adjustment device 50 based on the stored adjustment amount when exposing the substrate P.
• the substrate P can be exposed while compensating for the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3.
• the control device CONT uses the temperature of the gas blown out from the outlet 36 so that the temperature of the liquid LQ and the temperature of the dummy substrate DP are approximately equal. Is adjusted using the second gas temperature control device 52, and the adjustment amount at that time is stored.When the substrate P is exposed, the temperature of the gas blown from the outlet 36 is adjusted based on the stored adjustment amount. By adjusting using the second gas temperature adjusting device 52, the substrate P can be exposed while compensating for the temperature change of the substrate P caused by the air flow generated by the gas seal mechanism 3.
• control device CONT can optimize the amount of heat radiated from the radiating unit 53 so that the temperature of the liquid LQ and the temperature of the substrate P are substantially equal based on the measurement result of the temperature sensor 80. it can.
• the adjustment amount (correction amount) in the compensation mechanism 5 may be stored in association with the shot area on the substrate P, or may be stored in association with the XY position of the substrate P. .
• the control device CONT can be mounted on the substrate holder PH based on the measurement result of the temperature sensor 80.
• Each of the plurality of radiating portions 54 embedded can be optimally controlled according to the movement state of the substrate P.
• the seal member 70 is levitated and supported on the substrate P by the gas ejected from the ejection port 32, but the gas seal mechanism 3 is filled in the optical path space K1.
• a gas bearing mechanism may be provided separately from the gas seal mechanism 3, or the seal member 70 may be supported so as to be movable by a predetermined support mechanism.
• the support member that supports the projection optical system PL and the seal member 70 may be connected by a predetermined support mechanism.
• the gas seal mechanism 3 is at least However, it is preferable that the seal member 70 be configured to be easily replaceable or detachable, for example, a configuration that can be divided into plural blocks. Furthermore, it is preferable that the pipes connected to the seal member 70 are easy to attach and detach.
• the force for holding the liquid LQ by the gas seal mechanism 3 may not necessarily use the gas seal.
• the distance between the final optical element LSI (or the lower surface 70A of the seal member 70) of the projection optical system PL and the substrate P is set to about 1 to 3 mm, and capillary action is caused.
• the liquid LQ may be supplied and collected while holding the liquid LQ.
• a force for providing the heat insulating material 71 on the seal member 70 is provided instead of providing the heat insulating material, or in combination with the heat insulating material, for example, a mechanism for adjusting the temperature of the seal member 70 is provided. It may be provided.
• a mechanism for adjusting the temperature of the seal member 70 is provided. It may be provided.
• the above-described heat insulating material etc. may not be provided. Good.
• the temperature change of the substrate P due to the heat of vaporization caused by the vaporization of part of the liquid LQ caused by the airflow generated by the gas seal mechanism 3 is compensated. Force Even if the gas seal mechanism 3 is not ejected, a part of the liquid LQ can be vaporized, so the gas seal mechanism 3 is not ejected or the gas seal mechanism 3 is not provided. Compensation mechanism 5 may compensate for substrate temperature changes due to heat of vaporization.
• the temperature of the liquid LQ filled in the optical path space K1 and the temperature of the substrate P are approximately equal.
• the local temperature of the substrate P due to the heat of vaporization described above is used.
• the temperature of the liquid LQ and the temperature of the substrate P may be different if the change (that is, the exposure accuracy fluctuation) is within a predetermined tolerance.
• pure water is used as the liquid LQ.
• Pure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing factories and the like, and has no adverse effects on the photoresist on the substrate P, optical elements (lenses), and the like.
• pure water does not have an adverse effect on the environment, and the content of impurities is extremely low. It is also expected to clean the surface of the optical element provided on the tip of the academic system PL. If the purity of the pure water supplied from the factory is low, the exposure apparatus may have an ultrapure water production device.
• the refractive index n of pure water (water) for exposure light EL having a wavelength of about 193 nm is said to be approximately 1. 44, and ArF excimer laser light (wavelength 193 nm) is used as the light source of exposure light EL.
• ArF excimer laser light wavelength 193 nm
• the wavelength is shortened to about 134 nm to obtain a high resolution.
• the projection optical system PL can be used if it is sufficient to ensure the same depth of focus as in the air.
• the numerical aperture can be increased further, and the resolution is improved in this respect as well.
• the final optical element LSI is attached to the tip of the projection optical system PL, and adjustment of optical characteristics of the projection optical system PL, such as aberration (spherical aberration, coma, etc.), is performed by this lens. It can be performed.
• the optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Or it may be a plane parallel plate (such as a cover plate) that can transmit the exposure light EL.
• the force that fills the optical path space on the image plane side of the optical element at the tip of the projection optical system with a liquid is disclosed in International Publication No. 2004Z019128 pamphlet V. This is achieved by adopting a projection optical system that fills the optical path space on the mask side of this optical element with a liquid.
• the force nozzle in which the nozzle member that supplies and recovers the liquid LQ in the liquid immersion mechanism 1 and the seal member 70 of the gas seal mechanism 3 are the same member.
• the member and the seal member may be different members.
• the structure of the liquid immersion mechanism 1 (particularly the nozzle member) is not limited to the above-described structure.
• European Patent Publication No. 1420298, International Publication No. 2004Z055803, International Publication No. 2004/057590, International Publication Those described in Japanese Patent No. 2005Z029559 can also be used.
• the liquid LQ is water (pure water), but it is a liquid other than water.
• the light source of the exposure light EL is an F laser
• the F laser light passes through water.
• Fluorine-based fluids such as tellurium (PFPE) and fluorine-based oils may be used.
• the portion that comes into contact with the liquid LQ is subjected to a lyophilic treatment by forming a thin film with a substance having a small molecular structure and containing fluorine, for example.
• liquid LQ is stable against the projection optical system PL that is transparent to the exposure light EL and has a refractive index as high as possible, and to the photoresist applied to the surface of the substrate P.
• cedar oil can also be used.
• liquid LQ having a refractive index of about 1.6 to 1.8 may be used.
• at least the final optical element LSI may be formed of a material having a higher refractive index than quartz and fluorite (for example, 1.6 or more).
• Various liquids such as a supercritical fluid can be used as the liquid LQ.
• the positional information of the mask stage MST and the substrate stage PST is measured using the interferometer system (92, 94).
• the present invention is not limited to this, and is provided in the stage, for example.
• An encoder system that detects the scale (diffraction grating) can be used.
• it is preferable that a hybrid system including both the interferometer system and the encoder system is used, and the measurement result of the encoder system is calibrated using the measurement result of the interferometer system.
• the position control of the stage may be performed by switching between the interferometer system and the encoder system or using both.
• the substrate P in each of the above embodiments is used not only for semiconductor wafers for manufacturing semiconductor devices, but also for glass substrates for display devices, ceramic wafers for thin film magnetic heads, or exposure apparatuses.
• Mask or reticle master synthetic quartz, silicon wafer, etc. are applied.
• the exposure apparatus EX in addition to a step-and-scan type scanning exposure apparatus (scanning stepper) that performs mask exposure by scanning the mask M and the substrate P synchronously, the mask M and the substrate P are used.
• a step-and-repeat projection exposure system (STEP) that exposes the pattern of the mask M in a state where M and the substrate P are stationary and moves the substrate P in steps. B).
• a reduced image of the first pattern is projected with the first pattern and the substrate P substantially stationary, for example, a refractive optical system that does not include a reflective element at a 1Z8 reduction magnification. It can also be applied to an exposure apparatus that uses a projection optical system) to perform batch exposure on the substrate P. In this case, after that, with the second pattern and the substrate P almost stationary, a reduced image of the second pattern is collectively exposed on the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. In addition, the stitch type exposure apparatus can also be applied to a step 'and' stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the substrate P, and the substrate P is sequentially moved.
• the present invention relates to JP-A-10-163099, JP-A-10-214783 (corresponding US Pat. No. 6,590,634), JP 2000-505958 (corresponding US Pat. (No. 5, 969, 441) or US Pat. No. 6,208, 407, etc., and can be applied to a twin stage type exposure apparatus having a plurality of substrate stages.
• a twin stage type exposure apparatus having a plurality of substrate stages.
• JP-A-11 135400 JP-A-2000-164504 (corresponding US Pat. No. 6,897,963), etc.
• a substrate stage for holding the substrate and a reference mark The present invention can also be applied to an exposure apparatus provided with a reference member on which is formed, and a measurement stage on which Z or various photoelectric sensors are mounted.
• the disclosure of US publications and disclosures of U.S. patents with the above-described measurement stage are incorporated as part of this description.
• the type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate P.
• An exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an imaging device It can be widely applied to exposure devices for manufacturing devices (CCD), micromachines, MEMS, DNA chips, reticles or masks.
• CCD compact disc read-only memory
• MEMS micromachines
• DNA chips DNA chips
• reticles or masks reticles or masks.
• a beam drawing apparatus for making a stamper master (so-called mold) for manufacturing a disk medium such as a CD or DVD
• a beam spot irradiation objective lens and a drawing master In the case where the liquid is filled, the present invention can be similarly applied.
• a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern 'dimming pattern) is formed on a light-transmitting substrate.
• a predetermined light-shielding pattern or phase pattern 'dimming pattern
• an electronic mask (variable molding mask) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed.
• a DMD Digital Micro-mirror Device
• spatial light modulator spatial light modulator
• an exposure apparatus (lithography system) that exposes a line 'and' space pattern on the substrate P by forming interference fringes on the substrate P. ) Can also be applied to the present invention.
• JP-T-2004-519850 corresponding US Pat. No. 6,611,316
• two mask patterns are synthesized on a substrate via a projection optical system
• the present invention can also be applied to an exposure apparatus that double exposes one shot area on a substrate almost simultaneously by one scan exposure.
• the exposure apparatus EX of the present embodiment has various mechanical subsystems including the constituent elements recited in the claims of the present application with predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling to keep. In order to ensure these various accuracies, before and after the assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, various electrical systems Is adjusted to achieve electrical accuracy.
• the assembly process from various subsystems to the exposure system includes mechanical connections, electrical circuit wiring connections, and pneumatic circuit piping connections between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus.
• the exposure equipment is manufactured at a temperature and It is desirable to perform in a clean room where the degree of leanness is controlled.
• a microdevice such as a semiconductor device includes a step 201 for performing a function / performance design of the microdevice, a step 202 for manufacturing a mask (reticle) based on this design step, Step 203 for manufacturing a substrate as a base material, Step 204 including processing for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, Device assembly step (including dicing process, bonding process, and packaging process) It is manufactured through 205, inspection step 206 and the like.
• the present invention when the substrate is exposed based on the immersion method, it is possible to accurately expose the substrate while suppressing the temperature change of the substrate. Therefore, the present invention provides an exposure apparatus for manufacturing a wide range of products such as semiconductor elements, liquid crystal display elements or displays, thin film magnetic heads, CCDs, micromachines, MEMS, DNA chips, and reticles (masks). Extremely useful.

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Health & Medical Sciences (AREA)
• Engineering & Computer Science (AREA)
• Atmospheric Sciences (AREA)
• Toxicology (AREA)
• Life Sciences & Earth Sciences (AREA)
• Environmental & Geological Engineering (AREA)
• Epidemiology (AREA)
• Public Health (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Priority Applications (1)

Applications Claiming Priority (2)

Publications (1)

Family

ID=37023780

Family Applications (1)

Country Status (2)

Cited By (23)

Families Citing this family (9)

Citations (5)

Family Cites Families (15)

• 2006
  • 2006-03-22 JP JP2007509296A patent/JP5040646B2/ja not_active Expired - Fee Related
  • 2006-03-22 WO PCT/JP2006/305695 patent/WO2006101120A1/ja active Application Filing
• 2011
  • 2011-12-14 JP JP2011273400A patent/JP2012064974A/ja active Pending
• 2014
  • 2014-05-19 JP JP2014103745A patent/JP5962704B2/ja not_active Expired - Fee Related
• 2015
  • 2015-06-01 JP JP2015111587A patent/JP6119798B2/ja active Active
• 2016
  • 2016-05-30 JP JP2016107452A patent/JP6330853B2/ja not_active Expired - Fee Related
• 2017
  • 2017-06-29 JP JP2017127246A patent/JP2017199020A/ja not_active Ceased
• 2018
  • 2018-10-03 JP JP2018188172A patent/JP2018205781A/ja not_active Ceased

Patent Citations (5)

Also Published As

Similar Documents

Legal Events