WO2005064670A1 - Plateau pour appareil de traitement par attaque chimique - Google Patents

Plateau pour appareil de traitement par attaque chimique Download PDF

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Publication number
WO2005064670A1
WO2005064670A1 PCT/US2004/042471 US2004042471W WO2005064670A1 WO 2005064670 A1 WO2005064670 A1 WO 2005064670A1 US 2004042471 W US2004042471 W US 2004042471W WO 2005064670 A1 WO2005064670 A1 WO 2005064670A1
Authority
WO
WIPO (PCT)
Prior art keywords
reticle
pedestal
substrate
support base
fabricated
Prior art date
Application number
PCT/US2004/042471
Other languages
English (en)
Inventor
Peter Satitpunwaycha
Khiem Nguyen
Alfred W. Mak
Kenneth S. Collins
Turgut Sahin
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2005064670A1 publication Critical patent/WO2005064670A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Definitions

  • the present invention generally relates to the fabrication of integrated circuits. More specifically, the invention relates to an apparatus for manufacturing a photomask, or "reticle,” useful in manufacturing semiconductors.
  • Integrated circuits are manufactured by forming discrete semiconductor devices on a surface of a semiconductor substrate.
  • a substrate is a silicon (Si) or silicon dioxide (Si0 2 ) wafer.
  • Si silicon
  • Si0 2 silicon dioxide
  • a technique commonly used to form precise patterns on substrates is photolithography.
  • the technique generally involves the direction of light energy through a lens, or "reticle” and onto the substrate.
  • a photoresist material is first applied on a substrate layer to be etched.
  • the resist material is sensitive to light energy, such as ultraviolet or laser sources.
  • the resist material defines a polymer that is tuned to respond to the specific wavelength of light used, and to different exposing sources.
  • the light source is actuated to emit ultraviolet (UV) light or low X-ray light, for example, directed at the resist- covered substrate.
  • UV ultraviolet
  • the selected light source chemically alters the composition of the photoresist material.
  • the photoresist layer is only selectively exposed.
  • a photomask, or "reticle” is positioned between the light source and the substrate being processed.
  • the photomask is patterned to contain the desired configuration of features for the substrate.
  • the patterned photomask causes the light energy to strike the resist material in accordance with the pattern.
  • Photolithographic reticles are fabricated from an optically transparent material, such as quartz (i.e., silicon dioxide, Si0 2 ).
  • the reticle includes a pattern of opaque material that inhibits the light from exposing portions of the substrate in accordance with the desired pattern.
  • a thin opaque layer of metal, typically chromium, is disposed on the surface of the reticle.
  • This light-shielding layer is patterned to correspond to the features to be transferred to the substrate, such as transistors or polygates.
  • the metallic material is patterned using conventional laser or electron beam patterning equipment to define the critical dimensions to be transferred to the metal layer.
  • the metal layer is then etched to remove the metal material not protected by the patterned resist, thereby exposing the underlying quartz material and forming a patterned photomask layer. Photomask layers thus allow light to pass therethrough in a precise pattern onto the substrate surface.
  • the exposed material may either be a positive resist or a negative resist.
  • a positive resist the exposed resist material on the substrate is removed, while in a negative resist, the unexposed portions are removed. Removal is typically by a chemical process to expose an underlying substrate material.
  • the exposed underlying substrate material may then be etched to form patterned features in the substrate surface while the retained resist material remains as a protective coating for the unexposed underlying substrate material.
  • contacts, vias, or interconnects may be formed by exposing the resist to a pattern of light through a photolithographic reticle having a photomask layer disposed thereon.
  • the method for fabricating a patterned reticle itself involves a deposition and subsequent etching process.
  • a metal layer is first deposited on a top surface of a glass reticle. Thereafter, selected portions of the metal layer are removed through etching.
  • Various types of etching processes are used for etching the metal layer from a reticle.
  • One such etching method is known as plasma etching.
  • plasma etching In order to perform plasma etching, a glass reticle is first placed within a process chamber. More specifically, the glass reticle is placed on a pedestal. In a plasma etching process, the pedestal serves as a cathode. To this end, the metallic pedestal is given RF power.
  • Power applied to the pedestal creates a substrate bias in the form of a negative voltage on the upper surface of the reticle.
  • This negative voltage is used to attract ions from a plasma formed above the reticle in the chamber.
  • the plasma is formed by the application of power to one or more inductive coils at the top of the chamber.
  • the inductive coils generate and sustain the plasma above the pedestal and reticle.
  • a voltage drop is induced across the pedestal that draws ions to the upper surface of the reticle, thereby etching a metallic layer.
  • the reticle is formed from a material having a low dielectric constant, e.g., glass or quartz, the amount of RF power that is coupled through the reticle is low. This inhibits the gas plasma in reacting with the reticle surface. This limitation is compounded by a gap typically existing between the reticle and the supporting pedestal therebelow.
  • the RF power may preferentially couple to other regions of the pedestal, producing a loss of RF power.
  • a pedestal cover e.g., cover ring and capture ring, fabricated from a dielectric material is inadequate to lessen the power coupled through the region of the pedestal that is not immediately below the reticle.
  • the present invention generally provides an improved pedestal for supporting a substrate and related substrate support hardware.
  • the pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or "reticle.”
  • the pedestal defines a body, and a base along on an upper surface of the body.
  • the body receives an RF power during substrate processing.
  • the substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material, or material having a lower dielectric constant than the remaining support base.
  • An example is quartz. Quartz has a lower dielectric constant than the materials typically used for fabricating the pedestal body or cover, e.g., alumina. The placement of quartz allows greater RF power to be coupled through the reticle, thereby enhancing the plasma etching process. It also provides greater control over the relative amount of RF power coupled through the reticle.
  • a layer of dielectric material is placed along the top of the support base of the pedestal body.
  • the entire cross-sectional thickness of the support base that encompasses the supporting ridge is fabricated from a dielectric material.
  • a separate substrate support assembly is disposed on the base to facilitate the transfer of the substrate onto and off of the pedestal, with the substrate support assembly being fabricated from a dielectric material.
  • Figure 1 is a cross-sectional view of a plasma etching chamber as might contain the pedestal of the present invention.
  • the chamber shown in Figure 1 is exemplary.
  • Figure 2 presents an exploded perspective view of the substrate support member of Figure 1.
  • Figure 3 shows a perspective cutaway view of one embodiment of a pedestal of the present invention.
  • Figure 4 provides a cross-sectional schematic view of a pedestal of the present invention. A portion fabricated from a dielectric material is shown.
  • Figure 5 presents a cross-sectional schematic view of a pedestal of the present invention, in an alternate embodiment. A portion fabricated from a dielectric material is again shown.
  • Suitable inductively coupled plasma etch chambers include the Decoupled Plasma Source (DPSTM) chamber available from DPSTM.
  • DPSTM Decoupled Plasma Source
  • Applied Materials, Inc. of Santa Clara, California, or the ETEC TetraTM photomask etch chamber available from ETEC of Hayward, California.
  • a two-coil chamber such as the Tetra IITM decoupled plasma source chamber available from Applied Materials, Inc. may also be employed.
  • Other process chambers may be used including, for example, capacitively coupled parallel plate chambers and magnetically enhanced ion etch chambers, as well as inductively coupled plasma etch chambers of different designs.
  • a substrate e.g., a glass reticle
  • a processing chamber An example of such a chamber is schematically shown in Figure 1.
  • the process chamber 100 of Figure 1 has a substrate support member 200 disposed therein, and a substrate handler blade 301 positioned adjacent thereto.
  • Substrates or reticles 222 are shown positioned on both the substrate support member 200 and the handler blade 301.
  • the processing chamber 100 is configured to receive a substrate 222, such as a glass reticle to be processed through plasma etching.
  • the substrate 222 enters and exits the chamber 100 through a gate 161.
  • the gate 161 serves as a port, and also isolates the chamber 100 environment during reticle processing.
  • the substrate 222 is transported via a substrate cassette, using the substrate handling blade 301.
  • the substrate handling blade 301 transfers the substrate 222 between a separate transfer chamber (not shown) and various processing chambers.
  • a separate transfer chamber not shown
  • the reticle fabrication process involves multiple steps, and that different steps are typically conducted in different chambers that mechanically cooperate with the substrate handling blade 301.
  • An example of such a processing system is a CenturaTM processing system available from Applied Materials, Inc. of Santa Clara, California.
  • the process chamber 100 generally includes a cylindrical side wall body 162.
  • the side wall body 162 helps define the chamber body, and also supports the gate 161.
  • the chamber 100 is also defined by a chamber bottom 167, and an energy transparent ceiling or lid 163.
  • An inductive coil 176 is disposed around at least a portion of the lid 163.
  • the side wall body 162 and chamber bottom 167 of the chamber 100 can be made from a metal, such as anodized aluminum.
  • the lid 163 is fabricated from an energy transparent material such as a ceramic or other dielectric material.
  • the chamber 100 holds a substrate support member 200.
  • the support member 200 supports the substrate 222 during processing.
  • a plasma zone 164 is defined by the process chamber 100 above an upper surface of the substrate support member 200.
  • process gases are introduced into the plasma etch chamber 100 through a gas input line 172.
  • the gas input line 172 is peripherally disposed about the substrate support member 200.
  • the gas input line 172 is shown illustratively, and may be disposed in other configurations, such as disposed at the top of lid 163.
  • Process gases and etchant byproducts may be exhausted from the process chamber 100 through an exhaust system (not shown).
  • An optional cooling line 184 is provided in the substrate support member or pedestal 200. for controlling the pressure in the plasma etch chamber 100.
  • An endpoint measurement device may optionally be included to determine the endpoint of a process performed in the chamber 100.
  • the support member 200 defines a pedestal for the substrate 222 during processing.
  • the support member 200 first comprises a bore 206.
  • the bore 206 has an upper surface that defines a substrate support base 210 (seen in Figure 2).
  • the substrate support base 210 is a separate piece mounted on an upper surface of the bore 206.
  • An optional substrate supporting assembly 215 is preferably provided over the base 210 to aid in transporting the substrate 222 into and out of the chamber 100.
  • the substrate supporting assembly 215 is shown in detail in Figure 2.
  • the bore 206 of the substrate support member 200 is mounted on a bulk head assembly, or shaft, 102.
  • the bore 206 is stationary in the chamber 100; however, in an alternative embodiment, the bore 206 (or a portion of the bore 206) may be moveable within the chamber 100.
  • the bore 206 of the substrate support member 200 is mounted on a stainless steel base 104.
  • the base 104 is typically disposed on the bottom of the processing chamber (not shown in Figure 2), with the bulk head assembly 102 mounted through the bottom of the processing chamber 100 and coupled to the bore 206.
  • the substrate support member 200 is adapted to maintain vacuum isolation between the interior of the chamber 100 and the outside environment. Power, electrical controls, and backpressure gases may be provided to the substrate support member 200 via the shaft assembly 102.
  • FIG. 2 presents an exploded perspective view of one embodiment of a substrate support member 200. From Figure 2, the bore 206 and support base 210 are more clearly seen. It can also be seen that a cathode 112 is disposed in the support base 210. The cathode 112 may optionally vertically extend above the surface of the bore 206. The cathode 112 is electrically coupled to an electrode power supply 178 to generate a capacitive electric field in the plasma etch chamber 100. Typically an RF voltage is applied to the cathode 112 while the side wall body162 is electrically grounded. Power applied to the pedestal 200 creates a substrate bias in the form of a negative voltage on the upper surface of the substrate 222.
  • This negative voltage is used to attract ions from the plasma formed in the chamber 100 to the upper surface of the substrate 222.
  • the capacitive electric field forms a bias which accelerates inductively formed plasma species toward the substrate 222 to provide a more vertically oriented anisotropic etching of the substrate 222.
  • Channels 211 are also disposed through the bore 206, and house internally movable lift pins 214 therein. As will be discussed further below, the lift pins 214 engage the lower surface of a capture ring 220 to move the capture ring 220 vertically within the chamber 100 relative to the cover ring 216.
  • the bore 206 may comprise a temperature controlled base adapted to regulate the temperature of the substrate support assembly 215, and thus, a substrate 222 disposed thereon.
  • the bore 206 can be made of a material inert to the process formed in the processing chamber including, for example, aluminum oxide, or aluminum, and substrate support assembly 215 components can be made of aluminum or aluminum oxide.
  • the bore 206 may include fluid channels, heating elements, e.g., resistive heating elements or other temperature control members.
  • the substrate support member 200 includes a separate substrate supporting assembly 215.
  • the substrate supporting assembly 215 generally includes a cover ring 216 and a capture ring 220.
  • the cover ring 216 is preferably a circular ring having an upper surface 219 and support shoulders 218.
  • the substrate supports 218 define shoulders for receiving a substrate (not shown).
  • the substrate supports 218 define opposing raised surfaces 221, 223 that each includes an inner sloped surface for receiving a substrate.
  • a central opening 225 is formed in the upper surface 219 of the cover ring 216.
  • the two raised surfaces 221, 223 are generally disposed on opposing sides of the central opening 225.
  • the first raised surface 221 defines an essentially linear raised surface extending along the length of one side of the central opening 225.
  • the second raised surface 223 defines an arcuate raised surface 221 having an outer diameter 224 and an inner diameter 226.
  • the outer diameter 224 generally matches the radius of the cover ring 216, while the inner diameter 226 conforms to the geometry of the central bore 225 along one or more sides of the bore 225.
  • the upper surface 219 and the raised surfaces 221 , 223 may be monolithic or may be made of separate components connected together.
  • the capture ring 220 defines an arcuate base plate having an inner diameter 207 and an outer diameter 224.
  • a central bore 206 is formed within the inner diameter 207 of the capture ring 220.
  • the diameters 207, 202 of the capture ring 220 are not continuous, but retain an opening that serves as part of the bore 206.
  • the capture ring 220 includes substrate supports 204, 205.
  • the substrate supports 204, 205 generally follow the inner diameter 207 of the capture ring 220. In the arrangement of Figure 2, the supports 204, 205 define shoulders disposed along the inner perimeter 207.
  • the substrate supports 204, 205 and the base plate 202 form a substrate receiving area.
  • the shoulders 204, 205 and the base plate 202 are adapted to mate with the substrate supports 218 on the cover ring 216.
  • the capture ring 220 When the capture ring 220 is rested upon the cover ring 216, the substrate supports 205 for the capture ring 220 are co-planar with the substrate supports 218 for the cover ring.
  • the capture ring 220 is dimensioned to rest on the cover ring 216 without covering the two raised surfaces 221, 222 on the cover ring 216. Together, the substrate supports 205, 218 may then seamlessly receive a substrate (not shown).
  • the capture ring 220 moves vertically above the cover ring 216.
  • the lift pins 214 move the capture ring 220 vertically above the cover ring 216 during substrate transfer, and then lower the capture ring 220 onto the cover ring 216 for substrate processing.
  • the use of lift pins in the semiconductor fabrication business is known, and those of ordinary skill in the art will understand from this disclosure how the lift pins may be fabricated.
  • Channels 217 are formed through the cover ring 216 to enable the lift pins 214 disposed through the bore 206 to move therethrough and lift the capture ring 220 vertically.
  • the vertical movement imparted by the lift pins 214 is used to lift the capture ring 220 to effectuate substrate transfer between the substrate handler blade 301 and the capture ring 220.
  • the lift pins 214 move the capture ring 220 vertically above the cover ring 216 during substrate transfer, and then lower the capture ring 220 onto the cover ring 216 for substrate processing.
  • the reticle 222 (or other substrate) is positioned on the surface of the pedestal 200. Etch gases are then introduced into the chamber 100.
  • a process gas source supplies gas, such as an oxygen based gas, through a gas input line 172.
  • gas input line 172 feeds gas into the side of the lid 163.
  • gas may also be introduced through nozzles (not shown) in the top of the lid 163.
  • Chamber pressure is controlled by a closed-loop pressure control system (not shown).
  • Plasma is formed by the application of power to one or more inductive coils 176 at the top of the lid 163.
  • two RF coils 176 are used, with one being an outer coil and one being an inner coil.
  • a power supply 177 and matching network is used to apply power to the inductive coils 176.
  • the inductive coils 176 generate and sustain the plasma above the pedestal 200 and substrate 222. In one arrangement, approximately 125 Watts is applied to the coils 176 at a frequency of about 13.56 MHz, to produce and maintain an oxygen-comprising plasma over the surface of the reticle 222.
  • the coils 176 In one arrangement for a dual coil system, approximately 400 Watts is applied to the coils 176 at a frequency of about 13.56 MHz, to produce and maintain a chlo7rine-and-oxygen-comprising plasma over the surface of the reticle 222.
  • the coils may provide a DC bias of about 340 to 410 Volts on the reticle surface.
  • Figure 3 shows a perspective cutaway view of one embodiment of a pedestal 300 of the present invention.
  • the pedestal 300 is configured to receive and support a substrate in a plasma etching chamber.
  • the substrate is a photolithographic reticle
  • the chamber is a plasma etching chamber, such as the chamber shown in Figure 1 , and discussed above.
  • the pedestal first comprises a body or upper support base 306.
  • the body 306 is a generally cylindrical object, though other shapes may be employed.
  • the body 306 includes an upper surface 310 that serves as a substrate support base.
  • the support base 310 has a radial outer diameter 324.
  • the base 310 also has an support ridge 326 that forms a four-sided support ridge 325.
  • the support ridge 325 serves to support the reticle above the pedestal 300 during processing.
  • the support ridge 325 is preferably fabricated from a metallic material.
  • support ridge means any raised surface feature of any height or shape along the support base 310 that contacts and supports a substrate 222 during processing.
  • the support base 310 is typically configured to receive a cover (not shown) to further support a reticle during processing.
  • the cover may be configured to operate as the substrate support assembly 215 described above.
  • the body 306 is fabricated from a dielectric material.
  • the dielectric material portion of the body 306 is shown at 318.
  • Dielectric material 318 is selectively used in the upper surface 310 so as to define a dielectric ring generally about the perimeter of the body 306.
  • the dielectric material 318 is placed outside of the contact point, e.g., support ridge 326, for the reticle 222 on the pedestal 300.
  • the dielectric material portion 318 of the body 306 may comprise two or more separate components (not shown) joined together to form the dielectric portion 318 of the body 306.
  • the two or more dielectric members may be fabricated from materials having different dielectric properties. The benefit of using material of different dielectric properties is to control the relative amount of RF power coupled through the reticle, as the thickness and dielectric property of the reticle substrate, e.g., quartz, is fixed.
  • the dielectric material portion 318 of the body 306 may be of different thicknesses. This is demonstrated in the schematic embodiments shown in Figures.
  • Figure 4 provides a cross-sectional view of a pedestal 300' of the present invention.
  • the pedestal 300' is shown schematically.
  • Figure 5 presents a cross-sectional view of a pedestal 300" of the present invention, in an alternate embodiment.
  • the pedestal 300" is again shown schematically.
  • a reticle 222 is shown being supported on the respective pedestal 300', 300".
  • a cover 315 is provided.
  • the cover 315 may be configured in accordance with the cover 215 shown in the exploded view of Figure 2.
  • the cover 315 may be configured in accordance with the cover 215 shown in the exploded view of Figure 2.
  • 315 is preferably fabricated from a dielectric material.
  • the use of different dielectric material thickness is to adjust or control the relative RF power coupled to the reticle.
  • One benefit of using a dielectric material is it enables the use of two control knobs, that is knobs for dielectric constant and thickness. This, in turn, enables the operator to change the relative amounts of RF that goes into the reticle versus the RF power that goes to the pedestal area surrounding the reticle.
  • the dielectric thickness and type may be such that the relative amount is the same for uniform power distribution, or different if needed for compensating for the etch process.
  • Dielectric material is shown at 318 in both Figure 4 and in Figure 5.
  • the dielectric material 318 resides along the top of the upper support base 306.
  • the dielectric material 318 defines substantially the entire thickness of the upper support base 306. In either instance, the dielectric material 318 is preferably placed outside of the contact point for the reticle 222 on the pedestal 300.
  • the pedestals 300, 300', 300" place dielectric material along a periphery of the upper substrate support body 306.
  • the dielectric material 318 may be polymeric or ceramic.
  • An example of a polymeric material is ArdelTM polyarylate material manufactured by Amoco polymers.
  • Another example is VespelTM polyimide from DuPont.
  • Still another example is a plastic material sold under the trade name UltemTM.
  • Yet another example is a synthetic rubber material.
  • An example of a suitable ceramic material is aluminum oxide.
  • Another example of an acceptable dielectric material is quartz.
  • the selected use of dielectric material 318 has the effect of changing the amount of RF power coupling into the reticle during a plasma etching procedure.
  • the body 306 receives power, such as an RF power.
  • power such as an RF power.
  • the potential drop across the pedestal is changed to have a value less than the region where the reticle rests, i.e., inside of the substrate support ridge 326.
  • the portion of the pedestal 300 within the substrate support ridge 326 remains metallic in order to efficiently conduct waste heat away from the reticle 222.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne généralement un modèle amélioré de plateau support pour substrat. Ce plateau convient particulièrement au traitement par attaque chimique au plasma, notamment dans le cas d'un photomasque pour quartz ou réticule. Ce plateau définit un corps, et une base support à substrat le long de la surface supérieure du corps. Cette base support à substrat présente un bord extérieur, et une bordure intermédiaire de support à substrat permettant d'accueillir le substrat et de lui servir de support. Une partie au moins de la base support à substrat, à l'extérieur de la bordure intermédiaire, est faite en un matériau diélectrique. Cela vise à coupler une plus grande énergie haute fréquence au travers du réticule de façon à renforcer le traitement d'attaque chimique au plasma.
PCT/US2004/042471 2003-12-19 2004-12-16 Plateau pour appareil de traitement par attaque chimique WO2005064670A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US53106203P 2003-12-19 2003-12-19
US60/531,062 2003-12-19
US10/782,300 2004-02-18
US10/782,300 US20050133166A1 (en) 2003-12-19 2004-02-18 Tuned potential pedestal for mask etch processing apparatus

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WO2005064670A1 true WO2005064670A1 (fr) 2005-07-14

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TW (1) TW200525605A (fr)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012515162A (ja) * 2009-01-12 2012-07-05 アレイ バイオファーマ、インコーポレイテッド ピペリジン含有化合物およびその用途

Families Citing this family (206)

* Cited by examiner, † Cited by third party
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