WO2004082890A1 - ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 - Google Patents
ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 Download PDFInfo
- Publication number
- WO2004082890A1 WO2004082890A1 PCT/JP2004/003335 JP2004003335W WO2004082890A1 WO 2004082890 A1 WO2004082890 A1 WO 2004082890A1 JP 2004003335 W JP2004003335 W JP 2004003335W WO 2004082890 A1 WO2004082890 A1 WO 2004082890A1
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- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- wafer
- abrasive
- surface plate
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims abstract description 122
- 239000004744 fabric Substances 0.000 claims abstract description 44
- 238000005498 polishing Methods 0.000 claims description 164
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims 1
- 239000002002 slurry Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000007665 sagging Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Definitions
- Carrier for holding an aerial for holding an aerial, a double-side polishing apparatus using the same, and a double-side polishing method for an aer.
- the present invention mainly relates to a carrier for holding an wafer used for double-side polishing of wafers such as silicon wafers, and also relates to a double-side polishing apparatus and a double-side polishing method.
- an apparatus 20 using a planetary gear mechanism as shown in FIG. 4 is known as a polishing apparatus for simultaneously polishing both surfaces of a silicon wafer.
- the polishing apparatus 20 moves the upper platen 16 and the lower platen 17 in addition to the upper platen 16 and the lower platen 17 to which the polishing cloths 18 and 19 are attached, respectively.
- Platen moving mechanism (rotary shafts 12 and 13), upper carrier 16 and lower carrier 17 for holding wafer W between upper platen 16 and lower platen 17
- a carrier moving mechanism (external gear 14, internal gear 15) for moving between the plate 16 and the lower plate 17 is provided.
- the upper surface plate 16 and the lower surface plate 17 are rotated in predetermined directions by rotating shafts 12 and 13, respectively.
- the upper platen 16 is provided with holes (abrasive supply holes) 22 penetrating in the vertical direction to supply the abrasive, and the abrasive is pumped by gravity and gravity (natural fall) Thus, it is possible to supply the abrasive from above through the abrasive supply hole 22.
- a plurality of carriers 11 are set between an internal gear (internal gear) 15 and an external gear (sun gear) 14. 5 and the external gear 14 are rotated to rotate between the upper and lower platens 16 and 17 (polishing cloths 18 and 19).
- the upper platen 16 and the lower platen 17 rotate and the carrier 11 revolves while rotating. Is called a 4-way (drive) system.
- the wafer W is housed in each wafer holding hole 2 of the carrier 11 and then sandwiched between the upper and lower platens 16 and 17 to remove abrasive grains and the like.
- the carrier 11 is rotated while supplying a liquid abrasive (also called slurry) containing it.
- a liquid abrasive also called slurry
- a slurry is generally used in which abrasive grains such as colloidal silicon force are dispersed in an alkaline solution.
- the polishing agent supplied from the upper surface plate is also supplied to the lower surface side (lower surface plate side) of the wafer A from between the respective carriers 11, and the front and rear surfaces of the wafer A are polished to a mirror surface. .
- both sides of the wafer W can be polished simultaneously, so that the polishing efficiency can be improved as compared with the case of using a so-called single-side apparatus.
- the surface polishing apparatus 20 using the above-described planetary gear mechanism has a problem that it is difficult to cope with recent enlargement of silicon wafers. That is, the carrier 11 has a structure that moves between the helical gear 15 and the external gear 14, so that the diameter of the carrier 11 is smaller than the radii of the surface plates 16 and 17. Therefore, especially when polishing wafers having a large diameter (for example, 300 mm), it is necessary to increase the size of the equipment.However, since a complicated gear mechanism is required, it is difficult to increase the size. Tooth gears are required, and when the size is increased, problems such as increased costs, reduced efficiency, and installation space will occur.
- a miniaturized double-side polishing apparatus 30 as shown in FIGS. 6 and 7 has been developed.
- This polishing device 30 performs polishing by moving the carrier 11 through a carrier holder 26 so as to draw a small circle without rotating itself in the plane, so that the carrier is an external gear like a four-way system.
- the apparatus does not need to be rotated around the wafer, and the apparatus can be miniaturized even when polishing large diameter wafers (see Japanese Patent Application Laid-Open No. H10-210251).
- the present invention requires a great improvement in a double-side polishing apparatus, particularly when a hard polishing cloth is used for polishing in a double-side polishing apparatus having a carrier that does not rotate and rotates. It is an object of the present invention to provide a technology capable of finishing a wafer having a flatness without a taper shape or a sagging of an outer periphery.
- an upper platen and a lower plate to which a polishing cloth is attached A carrier for holding an aerial, which is used when the aerial is held between a disk and the two sides of the aerial are polished with an abrasive, in addition to an aerial holding hole for accommodating and holding the aerial,
- An aerial holding carrier is provided, which has an abrasive passage hole for allowing an abrasive to pass therethrough, and wherein the total area of the abrasive passage hole on the main surface of the carrier is 15% or more.
- occupied area the total area of the abrasive passage holes occupying the main surface of the carrier (hereinafter sometimes simply referred to as “occupied area”) is set to 15% or more, any type of double-side polishing machine for this carrier can be used. However, sufficient slurry flows from the upper platen through the abrasive passage to the lower platen to reduce heat generation during processing, and the movement of the wafer in the holding hole becomes smoother. ⁇ It is possible to finish the wafer with high flatness without causing the taper shape of the wafer or sagging of the outer periphery.
- the total area of the abrasive passage holes occupying the main surface of the carrier is 30% or less. .
- the area occupied by the abrasive passage hole is within 30%, the formation of the wafer holding hole is not affected, and the strength as a carrier can be sufficiently ensured.
- Each abrasive passage has a diameter of 5 mn! If ⁇ 3 O mm preferably t abrasives passage holes of such size that it is circular, since a large number of abrasive passing apertures throughout the carrier is dispersed will be formed, the strength of Kiyaria The reduction can be suppressed, and the abrasive can pass through the entire carrier through the large number of abrasive passage holes.
- the abrasive passage holes are arranged concentrically or in a lattice over the entire carrier.
- a double-side polishing apparatus comprising: a carrier for holding an wafer holding a wafer between the upper platen; and a carrier moving mechanism for moving the carrier between the upper and lower platens.
- a double-side polishing apparatus is provided, which is provided with an abrasive supply hole for supplying an abrasive, and comprising, as the carrier, the carrier for holding an wafer according to the present invention.
- the abrasive supplied from the upper platen side flows through the abrasive passage of the carrier to the lower platen side. Sufficiently secured, and the abrasive will be evenly supplied between the lower surface of the wafer and the polishing cloth on the lower platen side. Therefore, if the wafer is double-side polished using this double-side polishing apparatus, the wafer can be finished to a flatness without generating a tapered shape, sagging on the outer periphery, and the like. Also, since there is no need to modify other parts besides the carrier, the device becomes inexpensive.
- the carrier moving mechanism causes the wafer holding carrier to make a circular motion without rotation in the plane of the carrier, and a gap between the upper surface plate and the lower surface plate in the wafer holding hole.
- the pivoting movement of the wafer held by the vehicle can be achieved.
- the carrier covers the entire surface of the lower surface plate.
- the polishing supplied from the upper surface plate side is performed.
- the agent also flows sufficiently to the polishing pad on the lower platen side through the abrasive passage of the carrier. Therefore, it is possible to finish large diameter wafers with high flatness using a compact polishing machine.
- the hardness of the polishing cloth can be Sho 50 or more, and the material of the polishing cloth can be urethane or rubber.
- High-hardness polishing cloths or urethane-based or rubber-based polishing cloths have been difficult to use in a double-side polishing apparatus due to the difficulty of permeating the abrasive.
- the lower platen provided with the carrier according to the present invention has The polishing cloth on the side is also supplied with sufficient polishing agent. The holding power of the slurry can be compensated, and even if the above-mentioned high-hardness polishing cloth is used, it is possible to finish the wafer with a high flatness.
- the double wafer polishing apparatus provided with the carrier according to the present invention is used, and the wafer of the carrier arranged between the upper surface plate and the lower surface plate is provided.
- a wafer is accommodated in the holding hole, and the upper platen and the lower platen are relatively moved while the abrasive is supplied from the upper platen side, and the carrier is moved between the upper platen and the lower platen.
- a method for polishing both sides of the wafer is provided, wherein the other side of the wafer is polished.
- the polishing agent is uniformly supplied between the lower surface of the wafer and the polishing cloth on the lower platen side. It is possible to finish the wafer with high flatness without causing sagging or peripheral sag.
- the supply amount of the abrasive supplied from the upper platen should be 3 liters / minute or more.
- the abrasive When the supply amount of the abrasive is within the above range, the abrasive can be sufficiently supplied to the polishing cloths attached to the upper and lower platens, and the wafer can be finished with high flatness. In addition, it is economical because no abrasive is wasted.
- the abrasive passage hole occupies 15% or more of the area occupied by the main surface of the carrier.
- the lower platen side passes through the abrasive passage hole.
- the flow of the polishing agent is sufficiently ensured. Therefore, by applying this carrier with a hard polishing cloth, especially in a double-side polishing machine equipped with a carrier that makes a circular motion that does not rotate, it is possible to finish the wafer with a high flatness without causing a tapered shape or peripheral sagging. Can be.
- FIG. 1 is a plan view showing an example of a wafer holding carrier according to the present invention.
- FIG. 2 is a plan view showing an example of a conventional wafer holding carrier.
- FIG. 3A is a plan view showing a carrier used in the second embodiment.
- FIG. 3 (b) is a plan view showing the carrier used in Comparative Example 2.
- FIG. 4 is a schematic view showing an example of a four-way type double-side polishing apparatus.
- FIG. 5 is a schematic plan view showing a planetary gear structure.
- FIG. 6 is a schematic diagram of a double-side polishing apparatus in which the carrier does not rotate.
- FIG. 7 is a schematic plan view of the double-side polishing apparatus of FIG.
- the inventor of the present invention has made intensive studies and investigated the causes of the wafer being formed into a tapered shape and the outer peripheral sag when polishing the wafer using a double-side polishing machine.
- the abrasive is not sufficiently supplied to the polishing cloth on the lower platen side, the movement of the wafer such as the rotation of the wafer in the wafer holding hole of the carrier is not carried out smoothly, resulting in a tapered shape.
- high flatness could not be achieved because the slurry whose temperature had risen stayed and sagged around the periphery of the wafer.
- the inventor conducted an investigation, and in particular, when a hard polishing cloth or a polishing cloth mainly composed of urethane or rubber was used, the holding power of the polishing agent by the polishing cloth was low, and the wafer was rotated. The slurry is concentrated in a small gap between the wafer holding hole and the wafer, and the etching effect on the wafer outer periphery increases, and the wafer outer periphery is excessively polished and the outer peripheral sag occurs. I found it easy.
- the inventor of the present invention polished the wafer with various changes in the occupied area and the arrangement pattern of the abrasive passages of the carrier, and found that the carrier with the occupied area of the abrasive passages of 15% or more was provided. It has been found that the use of ⁇ ⁇ ⁇ can significantly improve the flatness of the wafer without significantly modifying the apparatus, and thus completed the present invention.
- FIG. 1 shows an example of a wafer holding carrier according to the present invention.
- the carrier 1 has five circular wafer holding holes 2 for housing and holding the wafer at five locations. These wafer holding holes 2 are formed in such a size that the wafer can rotate within the holding hole 2. Further, in this carrier 1, in addition to the wafer holding hole 2, a large number of abrasive passage holes 3 and 4 for allowing the abrasive to pass therethrough are formed.
- Holes for passing abrasives were also provided in conventional carriers, but for example, as shown in FIG. 2, only a few relatively large holes 7 were provided, and the main surface of the carrier 11 was provided. The total area was about 10% at most from the viewpoint of securing the strength of the carrier 11 itself.
- the carrier 1 according to the present invention shown in FIG. 1 is formed so that the total area of the abrasive passage holes 3 and 4 occupying the main surface of the carrier 1 is 15% or more.
- the size and arrangement of the abrasive passage holes 3 and 4 are not particularly limited. If circular holes 4 each having a diameter of 5 mm to 3 O mm are arranged concentrically over the entire carrier 1 as shown in FIG. The abrasive can pass through the carrier 1 almost uniformly and evenly, and the strength of the carrier can be sufficiently maintained. Na us, even by arranging these abrasives passage hole 4, for example in a lattice shape on the entire carrier 1, in almost equal, and together are uniformly formed, also c can sufficiently maintain strength, formed radially You may make it.
- the material, size, thickness, etc. of the carrier 1 depend on the equipment to be used and the size of the wafer to be polished.For example, a glass epoxy plate having a thickness of about 700 to 900 / zm is used. Can be used. In order to provide the abrasive passage 4 in the glass epoxy plate, it is preferable to chamfer the processed portion after forming the hole 4 with a drilling machine. For example, a carrier having a diameter of about 190 mm is generally used for polishing a wafer having a diameter of 300 mm. Therefore, as shown in FIG.
- One 0 mm hole 3 and a hole with a diameter of about 18 mm By providing about 540 pieces, the area occupied by the abrasive passage holes 3 and 4 with respect to the main surface of the carrier 1 can be made 15 ° / 0 or more.
- the area occupied by the abrasive passage holes 3 and 4 in the main surface of the carrier 1 exceeds 30%, not only the formation of the wafer holding hole 2 but also the carrier including the wafer holding hole 2
- the total area of the holes formed in the hole exceeds 50% of the main surface of the carrier, and the strength of the carrier itself may be reduced. Even if such a carrier does not break during polishing, the carrier easily breaks when the carrier is set or otherwise handled.Therefore, the total area of the abrasive passage hole occupying the main surface of the carrier is small. It is preferable to be 30% or less.
- the polishing can be performed.
- the area occupied by the abrasive passage can be kept within 30%.
- the carrier 1 in FIG. 1 also has a connection hole 5 for fixing to a carrier holder described later, but the connection hole 5 may not be necessary depending on the form of the device.
- the carrier 1 according to the present invention is set in the double-side polishing apparatus 30 shown in FIGS. 6 and 7 to polish a silicon wafer will be described.
- the double-side polishing apparatus 30 includes an upper platen 16 and a lower platen 17 to which polishing cloths 18 and 19 are attached, a platen moving mechanism including a rotating motor and rotating shafts 12 and 13, Equipped with a carrier 1 for holding the wafer W between the upper surface plate 16 and the lower surface plate 17 and a carrier moving mechanism consisting of a carrier holder 26, an eccentric arm 27, a timing chain 28, etc. are doing.
- Upper platen 1 6 ⁇ Pi lower turn table 1 7, c upper platen are respectively configured to be able to rotate in a predetermined direction through the rotary shafts 1 2, 1 3, which is rotated by the rotation motor 1 6 is provided with an abrasive supply hole 22 for supplying an abrasive.
- the shape and number of the abrasive supply holes 22 are not particularly limited, and are set so that the slurry can be sufficiently and uniformly supplied between the polishing pad 18 and the carrier 1 of the upper platen 16. It may be provided as appropriate, for example, it may be arranged vertically and horizontally in a square shape or a concentric shape so as to be uniformly distributed on the upper surface plate 16.
- the polishing agent can be supplied from the respective polishing agent supply holes 22 to the entire upper platen 16 by means of a polishing agent supply means such as a tank or a pump for storing the slurry.
- the material of the polishing cloths 18 and 19 is not particularly limited.
- a hard polishing cloth of Shore A 50 or more (10 or more in Shore D), particularly a urethane-based or rubber-based material is mainly used.
- Hard abrasive cloths can also be used.
- a polishing cloth of 80 or more for Shore A (30 or more for Shore D) is preferable, and such a polishing cloth can easily produce a wafer having a flatness which has recently been required.
- Shore A is a standard standardized by JISK 6253, etc., and is a value obtained with durometer type ⁇ . Value).
- Shore A 50 is equivalent to about 10 for Shore D
- Shore A 80 is equivalent to about 30 for Shore D.
- the upper limit of the hardness of the polishing cloth is not particularly limited as long as the desired wafer flatness can be achieved. Even with a very hard polishing cloth of about 80 Shore D, the slurry can be supplied by using the carrier of the present invention. The movement of the wafer becomes smoother, the taper shape of the wafer and the sagging of the outer periphery are reduced, and the wafer can be finished with high flatness. Conventionally, it has been difficult to use such a hard polishing cloth in a double-side polishing apparatus because of its low slurry holding power, etc., but it can be suitably used in combination with the carrier 1 according to the present invention. it can.
- the carrier 1 can be moved between the upper surface plate and the lower surface plate by a carrier moving mechanism including a carrier holder 26, an eccentric arm 27, a timing chain 28, and the like.
- the carrier 1 is fixed to the carrier holder 26 via a connection hole 5 provided on the outer peripheral portion and a pin (not shown) provided on the carrier holder 26 side.
- Four bearings 29 projecting outward are provided at equal intervals on the outer periphery of the holder 26.
- An eccentric arm 27 is rotatably attached to each bearing portion 29, and a rotating shaft 25 is attached to the center of the lower surface of each eccentric arm 27.
- the eccentric arm 27 acts as a crank mechanism, and the carrier 1 held by the carrier holder 26 revolves in a circular motion without rotation in the plane.
- the radius of the revolving movement (circular motion that does not rotate) is the same as the distance (eccentric distance) between the shaft 23 on the holder 26 and the rotating shaft 25, and all points of the carrier 1 are C in FIG. It is a movement that draws a locus of small circles of the same size as shown by.
- the carrier 1 covers the lower platen.
- the carrier 1 shown in FIG. Can sneak around.
- the carrier 1 since the carrier 1 itself makes a circular motion that does not rotate, the moving amount is small and the load on the carrier 1 is small as compared with the case of using a four-way device. Therefore, even if the strength of the carrier 1 itself is slightly reduced by forming a large number of abrasive passage holes 3 and 4 in the carrier 1, there is no breakage during polishing.
- the carrier 1 is placed between the upper platen 16 and the lower platen 17, and then the wafer is placed in the wafer holding hole 2. Accommodates W. Then, the carrier 1 is sandwiched between the upper and lower platens 16 and 17, and the upper platen 16 and the lower platen 1 are supplied while the abrasive is supplied from the upper platen side (the abrasive supply hole 22). Turn 7 in the opposite direction. In addition, the carrier 1 is caused to make a circular motion without rotation in the plane of the carrier 1 by the eccentric arm 27, etc., so that the wafer A can move between the upper surface plate 16 and the lower surface plate 17 in the wafer holding hole 2. Between the two.
- the type of the polishing agent may be appropriately set depending on the material of the polishing cloth, the polishing conditions, and the like.
- the pH is adjusted to pH 10 to pH 11.
- An alkaline solution containing a Kodidasiri force can be used.
- the supply amount of the abrasive may be appropriately set in consideration of the size of the carrier and the like, but is preferably 3 liters / minute or more and 10 liters or less. If the supply amount of the abrasive is smaller than the above range, the wafer tends to be tapered, while if it exceeds the above range, a hydroplane phenomenon may occur and the wafer may not be polished.
- the polishing cloth has a hardness of at least Sho 50 as described above, or a hard polishing cloth mainly composed of urethane or rubber.
- a small polishing cloth it is preferable that the supply amount of the polishing agent is increased, and the supply amount is reduced when a soft polishing cloth such as a nonwoven fabric is used, since the polishing agent does not easily permeate the polishing cloth.
- the abrasive passes through the abrasive supply holes 22 on the upper platen side, reaches between the polishing cloth on the upper platen side and the upper surface of the carrier 1, and is further provided mainly on the entire carrier.
- the abrasive is sufficiently supplied to both the upper and lower surfaces of the wafer W.
- the polishing conditions (particularly the amount of the abrasive) on both surfaces of the wafer A are made uniform.
- the cooling effect is exhibited by sufficiently supplying the abrasive to the lower surface side of the wafer W.
- the polishing agent is evenly supplied to the entire space between the wafer A and the lower polishing cloth 19 through the polishing agent passage hole, and the rotation of the wafer in the holding hole 2 is prevented.
- the movement is smooth, and it is possible to finish the wafer with high flatness without causing taper shape or sagging of the outer periphery.
- the slurry supplied onto the polishing surface sequentially overflows and is discharged in the outer peripheral direction, so that it can be reused by collecting and circulating the slurry.
- Diameter 1 1 9 0 mm, thickness 8 0 0 mu m addition t which is prepared a glass epoxy-made carrier for this Kiyaria formed five is Ueha holding holes of diameter 3 0 1 mm, the abrasive passage hole As shown in FIG. 1, about 5.10 concentric circular through holes are formed concentrically. The ratio of the area occupied by the abrasive passages to the main surface of the carrier was 17.23%.
- polishing device a double-side polishing device that does not rotate the carrier as shown in Fig. 6 was used.
- polishing cloth As the polishing cloth, a polishing cloth made of a urethane-based pad (a hard pad of about 70 in Shore D) was attached to both the upper surface plate and the lower surface plate.
- polishing agent an alkaline solution containing a colloidal force adjusted to pH 10.8 to pH 11 was used, and the supply amount was 6 liters.
- the above-described apparatus and conditions both sides of a silicon wafer having a diameter of 300 mm were polished.
- the polishing allowance was 16 ⁇ m on both sides.
- the flatness of the ⁇ wafer was checked using a flat nest tester for the ⁇ wafer shape after polishing, and the SF QRmax (excluding the surrounding area of 2 mm, the size of the site) : 2 6 mmX 3 3 mm) c was 0.1 in
- a conventionally used carrier as shown in FIG. 2 was used.
- this carrier has a single hole with a diameter of 200 mm at the center and a hole with a diameter of 150 mm around the center as a through hole for passing abrasive.
- the area occupied by the five provided through holes in the carrier was 10.777%.
- the configuration other than the carrier was the same as that of the apparatus of Example 1, and the polishing was performed under the same polishing conditions as in Example.
- the S F QRmax (excluding the peripheral 2 mm) was 0.3 2 / z m, which did not satisfy the flatness required in recent years. In particular, dripping was observed at the outer periphery of the wafer, and the value of S F QRmax was particularly bad.
- SF QRm a 0 0.25 / ⁇ ⁇ , Example 2
- SF QRmax 0.
- the present invention is not limited to the above embodiment.
- the above embodiment is merely an example, and is substantially the same as the technical idea described in the claims of the present invention. Any device having a single configuration and exhibiting the same function and effect is included in the technical scope of the present invention.
- polishing apparatus in which the carrier does not rotate is used has been described.
- the polishing apparatus is not limited to this type, and the present invention may be applied to other double-side polishing apparatuses such as a 4-way method. Polishing can also be performed with a carrier.
- the size and arrangement of the abrasive passages are not limited to those shown in FIG. 1 if the total area of the abrasive passages occupying the main surface of the carrier is 15% or more. What is necessary is just to set suitably according to an object.
- a very hard polishing cloth such as Shore D 70 was used, but the same effect can be obtained with a hard polishing cloth of about Shore D 30 to 42 (80 to 90 for Shore A).
- Shore D 70 a hard polishing cloth of about Shore D 30 to 42 (80 to 90 for Shore A).
- polishing was possible even near Shore D 10 (about Sho 50) without generating a tapered shape, peripheral sagging, and the like. Even softer abrasive cloths can of course be used.
- the polishing cloth may be appropriately set depending on the desired quality.
- the polishing cloth is not particularly limited, but by using the carrier of the present invention in a double-side polishing apparatus of a type in which the carrier does not rotate, Sho A 50 or more, which has been difficult to use in double-side polishing until now.
- the advantage of this method is that the hard abrasive cloth can be suitably used, and a higher quality (higher flatness) wafer can be obtained.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/549,453 US20060178089A1 (en) | 2003-03-20 | 2004-03-12 | Wafer-retaining carrier, double-side grinding device using the same, and double-side grinding method for wafer |
EP04720206A EP1676672A4 (en) | 2003-03-20 | 2004-03-12 | PLATELET RETAINER, DOUBLE-SIDED GRINDER USING THE SAME, AND DOUBLE-SIDED GRINDING METHOD FOR PLATELETS |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003077272A JP2004283929A (ja) | 2003-03-20 | 2003-03-20 | ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 |
JP2003-077272 | 2003-03-20 |
Publications (1)
Publication Number | Publication Date |
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WO2004082890A1 true WO2004082890A1 (ja) | 2004-09-30 |
Family
ID=33027943
Family Applications (1)
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PCT/JP2004/003335 WO2004082890A1 (ja) | 2003-03-20 | 2004-03-12 | ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060178089A1 (ja) |
EP (1) | EP1676672A4 (ja) |
JP (1) | JP2004283929A (ja) |
KR (1) | KR20050108394A (ja) |
TW (1) | TW200422138A (ja) |
WO (1) | WO2004082890A1 (ja) |
Cited By (1)
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KR100675092B1 (ko) * | 2005-06-13 | 2007-01-30 | 주식회사 에이엘티 | 재생 웨이퍼용 연마장치 및 그 연마방법 |
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JP2007021680A (ja) * | 2005-07-19 | 2007-02-01 | Shin Etsu Handotai Co Ltd | ウエーハの両面研磨方法 |
JP2007152499A (ja) * | 2005-12-06 | 2007-06-21 | Fujikoshi Mach Corp | ワーク研磨方法 |
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DE102009009497A1 (de) * | 2009-02-18 | 2010-07-08 | Siltronic Ag | Läuferscheibe zum Halten von Halbleiterscheiben während einer beidseitigen Politur der Halbleiterscheiben |
JP2010264537A (ja) * | 2009-05-14 | 2010-11-25 | Disco Abrasive Syst Ltd | キャリアプレート |
WO2011135949A1 (ja) * | 2010-04-30 | 2011-11-03 | 株式会社Sumco | シリコンウェーハの研磨方法およびその研磨液 |
DE102011082777A1 (de) | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
TWI425230B (zh) * | 2011-10-25 | 2014-02-01 | Chroma Ate Inc | Touchpad detection machine |
CN103158061A (zh) * | 2011-12-14 | 2013-06-19 | 有研半导体材料股份有限公司 | 固定硅片用载片圈 |
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JP6007553B2 (ja) * | 2012-04-06 | 2016-10-12 | 信越半導体株式会社 | ウエーハの研磨方法 |
DE102012206398A1 (de) | 2012-04-18 | 2012-06-21 | Siltronic Ag | Verfahren zur beidseitigen Bearbeitung einer Scheibe aus Halbleitermaterial |
TWI465317B (zh) * | 2012-06-25 | 2014-12-21 | Sumco Corp | 工作件的硏磨方法及工作件的硏磨裝置 |
DE102012214998B4 (de) | 2012-08-23 | 2014-07-24 | Siltronic Ag | Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe |
DE102013200756A1 (de) | 2013-01-18 | 2014-08-07 | Siltronic Ag | Läuferscheibe für die beidseitige Politur von Scheiben aus Halbleitermaterial |
JP6578089B2 (ja) * | 2014-07-17 | 2019-09-18 | 信越半導体株式会社 | ウェーハ保持用キャリア並びにそれを用いたウェーハの両面研磨方法 |
JP2016036857A (ja) * | 2014-08-05 | 2016-03-22 | 株式会社Sumco | ワークの研磨方法およびワークの研磨装置 |
JP6424809B2 (ja) * | 2015-12-11 | 2018-11-21 | 信越半導体株式会社 | ウェーハの両面研磨方法 |
JP6513174B2 (ja) * | 2017-12-25 | 2019-05-15 | 信越半導体株式会社 | ウェーハ保持用キャリアの設計方法 |
CN111599740A (zh) * | 2020-04-16 | 2020-08-28 | 绍兴同芯成集成电路有限公司 | 一种阶梯状/缓坡状晶圆键合玻璃载板架构 |
CN113352228B (zh) * | 2021-07-16 | 2022-06-24 | 西安奕斯伟硅片技术有限公司 | 一种晶圆研磨设备 |
CN116000784A (zh) * | 2022-12-29 | 2023-04-25 | 西安奕斯伟材料科技股份有限公司 | 硅片双面抛光装置的承载件及硅片双面抛光装置 |
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JPH10180623A (ja) * | 1996-12-26 | 1998-07-07 | Mitsubishi Materials Shilicon Corp | ラッピング装置 |
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JPH09207064A (ja) * | 1996-02-01 | 1997-08-12 | Shin Etsu Handotai Co Ltd | 両面研磨機用キャリアおよびこれを用いて被加工物の両面を研磨する方法 |
JPH1110530A (ja) * | 1997-06-25 | 1999-01-19 | Shin Etsu Handotai Co Ltd | 両面研磨用キャリア |
JP2935843B1 (ja) * | 1998-09-17 | 1999-08-16 | 株式会社 リバースチール | ラッピングキャリヤ |
JP2000271858A (ja) * | 1999-03-24 | 2000-10-03 | Sanko Spring Kk | ラッピング用キャリヤ |
JP2001088020A (ja) * | 1999-09-22 | 2001-04-03 | Speedfam Co Ltd | ワークの研磨方法及び装置 |
JP2001105303A (ja) * | 1999-10-04 | 2001-04-17 | U T K Syst:Kk | 両面研磨用キャリア |
JP3684983B2 (ja) * | 2000-02-29 | 2005-08-17 | 三菱住友シリコン株式会社 | 両面研磨装置 |
JP2002160156A (ja) * | 2000-11-27 | 2002-06-04 | Fukushichi Fukuzaki | 研磨用キャリア |
DE10060697B4 (de) * | 2000-12-07 | 2005-10-06 | Siltronic Ag | Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens |
JP2002353177A (ja) * | 2001-05-29 | 2002-12-06 | Toray Ind Inc | 研磨パッド、およびその製造方法、およびそれを用いた研磨方法 |
DE10132504C1 (de) * | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
JP4343020B2 (ja) * | 2003-12-22 | 2009-10-14 | 株式会社住友金属ファインテック | 両面研磨方法及び装置 |
-
2003
- 2003-03-20 JP JP2003077272A patent/JP2004283929A/ja active Pending
-
2004
- 2004-03-12 EP EP04720206A patent/EP1676672A4/en not_active Withdrawn
- 2004-03-12 KR KR1020057017179A patent/KR20050108394A/ko not_active Application Discontinuation
- 2004-03-12 WO PCT/JP2004/003335 patent/WO2004082890A1/ja active Application Filing
- 2004-03-12 US US10/549,453 patent/US20060178089A1/en not_active Abandoned
- 2004-03-19 TW TW093107485A patent/TW200422138A/zh unknown
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JPH0435867U (ja) * | 1990-07-23 | 1992-03-25 | ||
JPH11235656A (ja) * | 1995-10-25 | 1999-08-31 | Nec Corp | 研磨パッド |
JPH10180623A (ja) * | 1996-12-26 | 1998-07-07 | Mitsubishi Materials Shilicon Corp | ラッピング装置 |
JP2000042912A (ja) * | 1998-07-24 | 2000-02-15 | Fujikoshi Mach Corp | 両面研磨装置 |
Cited By (1)
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KR100675092B1 (ko) * | 2005-06-13 | 2007-01-30 | 주식회사 에이엘티 | 재생 웨이퍼용 연마장치 및 그 연마방법 |
Also Published As
Publication number | Publication date |
---|---|
EP1676672A4 (en) | 2008-08-06 |
US20060178089A1 (en) | 2006-08-10 |
KR20050108394A (ko) | 2005-11-16 |
EP1676672A1 (en) | 2006-07-05 |
JP2004283929A (ja) | 2004-10-14 |
TW200422138A (en) | 2004-11-01 |
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