Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32532—Electrodes
  • H01J37/32577—Electrical connecting means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32082—Radio frequency generated discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32082—Radio frequency generated discharge
  • H01J37/32174—Circuits specially adapted for controlling the RF discharge
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
  • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
  • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Definitions

• the present invention particularly relates to semiconductor devices.
• the processing gas can be fed into the plasma generation space from the inside of the ring.
• a shahead which is capable of arranging a head to uniformly discharge processing gas from a number of gas outlets, is constituted by an electrode.
• High frequency power supply The high frequency may be divided and supplied.
• FIG. 14 is a diagram showing a variable capacitance-to-bottom self-bias voltage characteristic according to the second embodiment.
• the processing gas from the common processing gas supply source 66 is supplied to the gas introduction chambers 62 and 64 at a predetermined flow rate ratio.
• the gas supply pipe 6 from the processing gas supply source 66 is used.
• 8 is branched into two on the way, connected to the gas introduction chambers 6264, and flow control valves 70a and 70b are arranged in the respective branch pipes 68a and 68b. Since the conductance of the flow path from the processing gas supply source 66 to the gas guide chambers 62, 64 is equal, adjustment of the flow control valves 70a-70b allows the two gas introduction chambers 6
• the flow ratio of the processing gas to be supplied to 2 and 64 can be adjusted arbitrarily.
• the gas supply pipe 68 is provided with a muff port 1: 3 controller (MFC) 72 and an open / close valve 74 Is done.
• MFC controller
• the exhaust device 84 is connected to the exhaust port 82 via the exhaust pipe 82.
• the exhaust device 84 has a vacuum pump such as a turbo molecular pump, and can reduce the pressure of the plasma processing space in the chamber 10 to a predetermined degree of vacuum.
• a gate knob 86 for opening and closing the loading / unloading port of the semiconductor wafer W is attached to the side wall of the chamber 10. 6
• the high-frequency power source 2 is connected to the susceptor 16 as the lower electrode through the matching unit 88.
• the plasma is generated in the glow discharge between the susceptor 16 and o.
• the surface to be processed of the semiconductor device W is etched by radicals or ions generated by the plasma.
• a third feature of the second embodiment is that, as shown in FIG. 15A relating to a low-pass filter 92 connected between the inner upper electrode 38 and the ground potential, Lono in the embodiment.
• the filter 92 has a variable resistor 93 and a coil 95 connected in series.
• the filter 92 does not pass the high frequency (60 MHz) for generating plasma, and has the high frequency (2 MHz) for noise. z) It is constructed to pass the following AC frequency and DC. Lono.
• the filter 92 By adjusting the resistance value R 93 of the variable resistor 93 variably, the DC potential of the inner upper electrode 38 or the self-bias voltage can be obtained.
• etching depth is the depth of the hole formed in the SiO 2 film during the etching time (120 seconds). It corresponds to the switching speed.

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Plasma Technology (AREA)
• Drying Of Semiconductors (AREA)
• ing And Chemical Polishing (AREA)
• Chemical Vapour Deposition (AREA)

Priority Applications (4)

Applications Claiming Priority (4)

Related Child Applications (1)

Publications (1)

Family

ID=32396265

Family Applications (1)

Country Status (7)

Cited By (6)

Families Citing this family (41)

Citations (5)

Family Cites Families (7)

• 2003
  • 2003-10-17 JP JP2003358425A patent/JP4584565B2/ja not_active Expired - Fee Related
  • 2003-11-25 CN CNB2003801042923A patent/CN100459059C/zh not_active Expired - Lifetime
  • 2003-11-25 KR KR1020057009448A patent/KR100652983B1/ko not_active Expired - Fee Related
  • 2003-11-25 AU AU2003284684A patent/AU2003284684A1/en not_active Abandoned
  • 2003-11-25 WO PCT/JP2003/015030 patent/WO2004049420A1/ja not_active Ceased
  • 2003-11-26 TW TW092133237A patent/TW200416874A/zh not_active IP Right Cessation
• 2005
  • 2005-05-26 US US11/137,516 patent/US7506610B2/en not_active Expired - Lifetime

Patent Citations (5)

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