WO2004040630A8 - 半導体デバイスの製造方法及び基板処理装置 - Google Patents

半導体デバイスの製造方法及び基板処理装置

Info

Publication number
WO2004040630A8
WO2004040630A8 PCT/JP2003/013606 JP0313606W WO2004040630A8 WO 2004040630 A8 WO2004040630 A8 WO 2004040630A8 JP 0313606 W JP0313606 W JP 0313606W WO 2004040630 A8 WO2004040630 A8 WO 2004040630A8
Authority
WO
WIPO (PCT)
Prior art keywords
vaporizer
substrate processing
liquid material
processing system
material gas
Prior art date
Application number
PCT/JP2003/013606
Other languages
English (en)
French (fr)
Other versions
WO2004040630A1 (ja
Inventor
Sadayoshi Horii
Hironobu Miya
Original Assignee
Hitachi Int Electric Inc
Sadayoshi Horii
Hironobu Miya
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc, Sadayoshi Horii, Hironobu Miya filed Critical Hitachi Int Electric Inc
Priority to JP2004548036A priority Critical patent/JP4427451B2/ja
Priority to US10/529,466 priority patent/US20060035470A1/en
Publication of WO2004040630A1 publication Critical patent/WO2004040630A1/ja
Publication of WO2004040630A8 publication Critical patent/WO2004040630A8/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Abstract

複数の反応物の供給工程を複数回繰り返すことにより基板を処理するものにおいて、反応物である原料を無駄に捨てることなく、基板処理のスループットを向上させる。　基板処理装置は、反応物として液体原料を気化した原料ガスを含み、その原料ガスの処理室１内への供給と、その後に行う原料ガスとは異なる反応物の処理室１への供給を複数回繰り返すことにより、基板を処理するものである。液体原料の流量制御は吐出駆動制御機構６によって制御する。吐出駆動制御機構６は、気化器３内に一体的に組込まれた弁体３３を制御することにより、気化器３や気化器３に接続される外部配管ではなく、気化器３中の気化部へ直接流れ込む液体原料の１回の吐出動作における流量を固定化し、液体原料を気化部３１に間欠的に吐出させるようにする。
PCT/JP2003/013606 2002-10-30 2003-10-24 半導体デバイスの製造方法及び基板処理装置 WO2004040630A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004548036A JP4427451B2 (ja) 2002-10-30 2003-10-24 基板処理装置
US10/529,466 US20060035470A1 (en) 2002-10-30 2003-10-24 Method for manufaturing semiconductor device and substrate processing system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-316154 2002-10-30
JP2002316154 2002-10-30

Publications (2)

Publication Number Publication Date
WO2004040630A1 WO2004040630A1 (ja) 2004-05-13
WO2004040630A8 true WO2004040630A8 (ja) 2005-03-10

Family

ID=32211674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/013606 WO2004040630A1 (ja) 2002-10-30 2003-10-24 半導体デバイスの製造方法及び基板処理装置

Country Status (3)

Country Link
US (1) US20060035470A1 (ja)
JP (1) JP4427451B2 (ja)
WO (1) WO2004040630A1 (ja)

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JP4502189B2 (ja) * 2004-06-02 2010-07-14 ルネサスエレクトロニクス株式会社 薄膜の形成方法および半導体装置の製造方法
US8393294B2 (en) * 2004-06-02 2013-03-12 James B. Watson Live bacteria liquid product applicator and remote management system therefore
KR20060007325A (ko) * 2004-07-19 2006-01-24 삼성전자주식회사 플라즈마 유도 원자층 증착 기술을 이용한 유전막 형성 방법
JP4570659B2 (ja) * 2004-08-04 2010-10-27 インダストリー−ユニヴァーシティ コオペレーション ファウンデーション ハニャン ユニヴァーシティ Ｄｃバイアスを利用したリモートプラズマ原子層蒸着装置及び方法
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JP4716737B2 (ja) * 2005-01-05 2011-07-06 株式会社日立国際電気 基板処理装置
JP4727266B2 (ja) * 2005-03-22 2011-07-20 東京エレクトロン株式会社 基板処理方法および記録媒体
KR100712525B1 (ko) * 2005-08-16 2007-04-30 삼성전자주식회사 반도체 소자의 커패시터 및 그 제조방법
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KR20090017758A (ko) * 2007-08-16 2009-02-19 삼성전자주식회사 강유전체 커패시터의 형성 방법 및 이를 이용한 반도체장치의 제조 방법
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US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
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JP5040004B2 (ja) * 2008-06-23 2012-10-03 スタンレー電気株式会社 成膜装置および半導体素子の製造方法
JP2011082196A (ja) * 2009-10-02 2011-04-21 Hitachi Kokusai Electric Inc 気化器、基板処理装置及び半導体装置の製造方法
JP5824372B2 (ja) * 2012-01-25 2015-11-25 東京エレクトロン株式会社 処理装置及びプロセス状態の確認方法
JP5547762B2 (ja) * 2012-03-12 2014-07-16 三井造船株式会社 薄膜形成装置
JP2014210946A (ja) * 2013-04-17 2014-11-13 三井造船株式会社 原子層堆積装置
JP2016196687A (ja) * 2015-04-03 2016-11-24 株式会社リンテック 高沸点液体材料の微小液滴発生装置
KR102122786B1 (ko) * 2015-12-18 2020-06-26 가부시키가이샤 코쿠사이 엘렉트릭 저류 장치, 기화기, 기판 처리 장치 및 반도체 장치의 제조 방법
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Also Published As

Publication number Publication date
WO2004040630A1 (ja) 2004-05-13
JPWO2004040630A1 (ja) 2006-03-02
JP4427451B2 (ja) 2010-03-10
US20060035470A1 (en) 2006-02-16

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