WO2004015021A1 - Cmp研磨剤および基板の研磨方法 - Google Patents
Cmp研磨剤および基板の研磨方法 Download PDFInfo
- Publication number
- WO2004015021A1 WO2004015021A1 PCT/JP2003/010001 JP0310001W WO2004015021A1 WO 2004015021 A1 WO2004015021 A1 WO 2004015021A1 JP 0310001 W JP0310001 W JP 0310001W WO 2004015021 A1 WO2004015021 A1 WO 2004015021A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- polished
- film
- substrate
- cmp
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 162
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 35
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 30
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 23
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 12
- -1 vinyl compound Chemical class 0.000 claims description 25
- 239000004744 fabric Substances 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 18
- 229920003169 water-soluble polymer Polymers 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 7
- 229920002554 vinyl polymer Polymers 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000002955 isolation Methods 0.000 abstract description 5
- 239000011229 interlayer Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 38
- 229910052814 silicon oxide Inorganic materials 0.000 description 34
- 239000010410 layer Substances 0.000 description 20
- 239000002270 dispersing agent Substances 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 238000000926 separation method Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004584 polyacrylic acid Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 3
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VZWGRQBCURJOMT-UHFFFAOYSA-N Dodecyl acetate Chemical compound CCCCCCCCCCCCOC(C)=O VZWGRQBCURJOMT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- ILLHQJIJCRNRCJ-UHFFFAOYSA-N dec-1-yne Chemical compound CCCCCCCCC#C ILLHQJIJCRNRCJ-UHFFFAOYSA-N 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- RZRILSWMGXWSJY-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;sulfuric acid Chemical compound OS(O)(=O)=O.OCCN(CCO)CCO RZRILSWMGXWSJY-UHFFFAOYSA-N 0.000 description 1
- HVYJSOSGTDINLW-UHFFFAOYSA-N 2-[dimethyl(octadecyl)azaniumyl]acetate Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CC([O-])=O HVYJSOSGTDINLW-UHFFFAOYSA-N 0.000 description 1
- BJLLGOQTEAOBJJ-MQQKCMAXSA-N 2-hydroxyethyl (2e,4e)-hexa-2,4-dienoate Chemical compound C\C=C\C=C\C(=O)OCCO BJLLGOQTEAOBJJ-MQQKCMAXSA-N 0.000 description 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 description 1
- CTXGTHVAWRBISV-UHFFFAOYSA-N 2-hydroxyethyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OCCO CTXGTHVAWRBISV-UHFFFAOYSA-N 0.000 description 1
- LIFHMKCDDVTICL-UHFFFAOYSA-N 6-(chloromethyl)phenanthridine Chemical compound C1=CC=C2C(CCl)=NC3=CC=CC=C3C2=C1 LIFHMKCDDVTICL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001083878 Licania tomentosa Species 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical group C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- KHSBAWXKALEJFR-UHFFFAOYSA-H cerium(3+);tricarbonate;hydrate Chemical compound O.[Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O KHSBAWXKALEJFR-UHFFFAOYSA-H 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- IACVYVRXYOKCDI-UHFFFAOYSA-N dodecanoic acid;octadecanoic acid Chemical compound CCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O IACVYVRXYOKCDI-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- XMRPIOZXPHTSCE-UHFFFAOYSA-N n-methyltridecan-1-amine Chemical compound CCCCCCCCCCCCCNC XMRPIOZXPHTSCE-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- UPHWVVKYDQHTCF-UHFFFAOYSA-N octadecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCCCCCCCN UPHWVVKYDQHTCF-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Polymers 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates to a CMP (Chemical Mechanical Polishing) abrasive used in an interlayer insulating film CD flattening step or a shear wrench separation forming step in a semiconductor device manufacturing process such as a semiconductor element. Use a substrate polishing method.
- CMP Chemical Mechanical Polishing
- CMP polishing technology In a semiconductor device manufacturing process, a layer to be exposed is completely flattened, thereby enabling miniaturization and improving a yield. Accordingly, CMP is a technology that is required, for example, when flattening an interlayer insulating film and performing shear-wrench separation.
- LOCOS Silicon Local Oxidation
- a shallow trench isolation method has recently been used.
- CMP is necessary to remove the excess silicon oxide film formed on the wafer substrate, and a silicon nitride film is placed under the silicon oxide film to stop polishing. Is formed as a stopper. It is common to use
- a CMP polishing agent is used to planarize silicon oxide insulating films, etc., formed by methods such as plasma-enhanced chemical vapor deposition (CVD) and low-pressure CVD. For this reason, alkaline abrasives having a pH exceeding 9 and using fumed silicon as abrasive particles have been widely used.
- CVD plasma-enhanced chemical vapor deposition
- fumed silicon as abrasive particles have been widely used.
- the polishing rate of the silicon nitride film which is a stopper, is also high, and the entire wafer surface cannot be uniformly ground. (Ie, high flatness cannot be achieved), or there are many polishing flaws that adversely affect the electrical characteristics.
- a polishing agent using cerium oxide has been widely used in recent years (for example, see Japanese Patent Application Laid-Open No. 5-326649).
- the cerium oxide abrasive has the characteristics that the polishing rate of the silicon oxide film is higher than that of the silica abrasive, and the polishing scratches are relatively small.
- studies have been made in recent years to apply cell oxide oxide abrasives as abrasives for semiconductors, and some of them have been put into practical use as abrasives for semiconductors. (For example, see Japanese Patent Application Laid-Open No. Hei 9-270402).
- An object of the present invention is to provide a CMP polishing agent capable of highly planarizing a surface to be polished without generating polishing scratches leading to poor electrical characteristics, and a method for polishing a substrate using the same. is there. Disclosure of the invention According to the present invention, a carbon-carbon triple bond portion of an organic compound having an acetylene bond is adsorbed to a film to be polished, so that the surface to be polished can be raised with almost no polishing scratches leading to poor electrical characteristics. It focuses on the fact that it can be flattened.
- the present invention relates to the following (1) to (7).
- a CMP abrasive containing cerium oxide particles, an organic compound having an acetylene bond, and water is a CMP abrasive containing cerium oxide particles, an organic compound having an acetylene bond, and water.
- R 1 represents a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
- R 2 represents a substituted or unsubstituted alkyl group having 4 to 10 carbon atoms.
- R 3 to R 6 each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, and R 7 and R 8 each independently represent a carbon atom.
- (1) represents a substituted or unsubstituted alkylene group, wherein m and n each independently represent 0 or a positive number.
- the substrate on which the film to be polished is formed is pressed against the polishing cloth of the polishing platen and pressurized, and the CMP polishing slurry according to any one of (1) to (4) is applied to the film to be polished and the polishing cloth.
- the substrate on which the film to be polished is formed is pressed against the polishing cloth of the polishing platen and pressurized, and a CMP polishing agent containing cerium oxide particles, an organic compound having an acetylene bond, and water is applied to the film to be polished. Polishing the film to be polished by moving the substrate to be polished and the polishing cloth relatively while the acetylene-bonded portion of the organic compound is adsorbed on the film to be polished while supplying the film to the polishing cloth. Substrate polishing method.
- cerium oxide particles are obtained by oxidizing cerium compounds of carbonate, nitrate, sulfate, and oxalate.
- EOS-Cerium oxide particles used for polishing silicon oxide films formed by the CVD method etc. do not limit the manufacturing method, but the cerium oxide crystallite diameter is 5 nm or more and 30 nm or more. It is preferably 0 nm or less.
- the content of alkali metals such as sodium ions and lithium ions, octogens, and zeolite is less than 10 ppm in cerium oxide particles. It is preferable to keep it to a minimum.
- firing is used as a method for producing cerium oxide powder. Oxidation methods such as synthesis or hydrogen peroxide can be used.
- the firing temperature is preferably from 350 ° C. to 900 ° C.
- cerium oxide particles produced by the above method are agglomerated, they are preferably mechanically pulverized.
- pulverization method a dry pulverization method using a jet mill or the like and a wet pulverization method using a planetary bead mill or the like are preferable.
- the jet mill method is described, for example, in Chemical Industry Transactions, Vol. 6, No. 5, (1.980), pp. 527-532.
- the CMP polisher in the present invention can be obtained, for example, by adding an organic compound described below to a dispersion liquid containing the cerium oxide particles, a dispersant, and water obtained as described above.
- concentration of the cerium oxide particles is not limited, but is preferably in the range of 0.5% by weight to 20% by weight in the CMP abrasive because of easy handling of the dispersion.
- the abrasive of the present invention preferably contains a dispersant.
- the dispersant preferably contains at least one selected from a water-soluble anionic dispersant, a water-soluble nonionic dispersant, a water-soluble cationic dispersant, and a water-soluble amphoteric dispersant.
- a water-soluble anionic dispersant preferably contains at least one selected from a water-soluble anionic dispersant, a water-soluble nonionic dispersant, a water-soluble cationic dispersant, and a water-soluble amphoteric dispersant.
- two or more dispersants are used.
- water-soluble anionic dispersant examples include triethanolamine lauryl sulfate, ammonium lauryl sulfate, and polyoxyethylene alkyl ether sulfate triethanolamine, which will be described later.
- anion-based compounds may be used.
- water-soluble nonionic dispersant examples include polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, Polyoxyethylene stearyl, polyether, polyoxyethylene polyol, other polyoxyethylene higher alcohol ethers, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyoxyalkylene alkyl Ether, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene zorevitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate Monooleate, polyoxyethylene sorbitan trioleate, poly (ethylene glycol sorbate), poly (ethylene glycol monolaurate), poly (ethylene glycol) monolaurate Monostearate, polyethylene glycol distearate, polyethylene glycol monooleate, polyoxyethylene alkylamine, polyoxyethylene hydrogenated castor oil,
- water-soluble cationic dispersant examples include coconut amine acetate and stearyl amine acetate
- water-soluble amphoteric dispersant examples include lauryl acetate , Stearyl betaine, lauryl dimethyl amide oxide, 2-alkyl-1-N-potoxymethyl-N-hydroxylethylimidazoline betaine, and the like.
- the amount of addition of the cerium oxide particles is determined based on the dispersibility and prevention of sedimentation of the particles in the slurry-like abrasive and the relationship between the polishing scratches and the amount of the dispersant added.
- the range is preferably not less than 0.01 part by weight and not more than 2.0 parts by weight based on 0.00 part by weight.
- the molecular weight of the dispersant is preferably from 100 to 500, 000, and more preferably from 1, 000 to 100, 000.
- the molecular weight of the dispersant is 10 If it is less than 0, it is difficult to obtain a sufficient polishing rate when polishing a silicon oxide film or a silicon nitride film, and if the molecular weight of the dispersant exceeds 50, 000, the viscosity becomes low. This is because the storage stability of the CMP abrasive tends to decrease.
- a homogenizer As a method for dispersing the cerium oxide particles in water, a homogenizer, an ultrasonic disperser, a wet pole mill, or the like can be used in addition to the usual dispersion treatment using a stirrer.
- the average particle size of the cerium oxide particles in the CMP slurry thus produced is preferably from 0.01 m to l.OITI. If the average particle size of the cerium oxide particles is less than 0.01 m, the polishing rate may decrease, and if it exceeds 1.0 m, the film to be polished is easily damaged.
- the average particle size of the cerium oxide particles is determined by diluting the cerium oxide slurry to an appropriate concentration as necessary, measuring the particle size with a laser diffraction particle size distribution analyzer, Use the median diameter.
- any organic compound containing a carbon-carbon triple bond can be used.
- R 1 represents a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
- R 2 represents a substituted or unsubstituted alkyl group having 4 to 10 carbon atoms.
- R 3 to R 6 each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms
- R 7 and R 8 each represent Independently represents a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms
- m and n each independently represent 0 or a positive number). Note that the above m and n are generally shown as average values. m + n is preferably 2 to 20 from the viewpoint of improving flatness. These may be used alone or in combination of two or more.
- the concentration of the organic compound having an acetylene bond in the CMP abrasive is 0.55% by weight to 5.00% by weight in order to obtain sufficient flatness.
- the abrasive of the present invention preferably further contains a water-soluble polymer compound in order to adjust liquid properties such as viscosity, pH, and surface tension. It is preferable to include such a water-soluble polymer compound from the viewpoint of improving flatness.
- a water-soluble polymer compound comprising a polymer of the vinyl compound include polyacrylic acid, ammonium salt of polyacrylic acid, and polyacrylic acid amine. Salts, polyvinyl acetate, polyvinyl imidazole, and polypinyl pyrrolidone, among which polyvinylpiperidone is more preferred. These may be used alone or in combination of two or more. Also, a copolymer of at least one compound selected from acrylic acid, ammonium acrylate, amine acrylate, vinyl acetate, and vinylimidazole with vinylpyrrolidone. May be.
- the weight-average molecular weight of the water-soluble polymer compound (hereinafter, referred to as a water-soluble polymer compound) comprising a polymer of a vinyl compound is preferably from 1,000 to 100,000, and the weight-average molecular weight is preferably 5,0,0. 0 0 to 50, 00 0 are more preferred '.
- the concentration of the water-soluble polymer compound in the CMP polishing slurry is preferably from 0.05% to 3.0% by weight in order to obtain sufficient flatness, and from 0.06% by weight to 3.0% by weight. 1.0% by weight is more preferred, and 0.07% to 0.5% by weight is even more preferred.
- the abrasive of the present invention includes additives generally added to the abrasive, such as coloring agents such as dyes and pigments, pH adjusters, and solvents other than water. May be added in a range that does not impair the effect of the above.
- the abrasive of the present invention comprises two liquids, for example, an additive liquid (first liquid) containing the above-mentioned organic compound having an acetylene bond and preferably a water-soluble polymer compound, and cerium oxide particles, water and preferably Is stored in a two-part solution with a slurry containing a dispersant (second liquid), and is separately supplied to the polishing platen during polishing and mixed on the polishing platen.
- first liquid an additive liquid
- second liquid containing a water-soluble polymer compound
- cerium oxide particles water and preferably Is stored in a two-part solution with a slurry containing a dispersant (second liquid)
- a preparation method can be adopted in which the two liquids are mixed in advance (just before polishing) and supplied onto a polishing platen. Stable polishing characteristics can be obtained with any of the polishing agents.
- the pH of the CMP abrasive is preferably 3 or more and 9 or less, More preferably, it is 5 or more and 8.5 or less. If the pH is less than 3, the chemical action is reduced, and the polishing rate may be reduced. If the pH is greater than 9, the chemical action is so strong that dishing may occur.
- the pH can be adjusted with acids, ammonia, and alkaline components such as tetramethylammonium hydroxide (TMAH).
- the method for polishing a substrate of the present invention is characterized in that the film to be polished on the substrate on which the film to be polished is formed is polished with the CMP polishing agent of the present invention.
- the film to be polished on the substrate on which the film to be polished is formed is polished with the CMP polishing agent of the present invention.
- a silicon oxide film on a semiconductor substrate such as a substrate for manufacturing a semiconductor device, specifically, a semiconductor substrate on which circuit elements and wiring patterns have been formed, and a semiconductor substrate on which circuit elements have been formed.
- a substrate on which a layer is formed is exemplified.
- the film to be polished include an inorganic insulating film, for example, the silicon oxide film layer or the silicon nitride film layer and the silicon oxide film layer.
- the substrate on which the film to be polished is formed is pressed against a polishing cloth of a polishing platen and pressurized, and the CMP polishing slurry of the present invention is supplied between the film to be polished and the polishing cloth. Then, the film to be polished is polished by relatively moving the film to be polished of the substrate and the polishing cloth. Specifically, at least one of the substrate and the polishing table of the polishing apparatus may be moved.
- the polishing method of the present invention will be described for the case of a semiconductor substrate.
- a holder for holding the semiconductor substrate and a polishing cloth (pad) can be attached, and the number of rotations can be changed.
- a general polishing apparatus having a polishing platen to which a functional motor or the like is attached can be used.
- the polishing cloth on the polishing platen general non-woven fabric, foamed polyurethane, porous fluororesin and the like can be used, and there is no particular limitation. Further, it is preferable that the polishing cloth is subjected to groove processing so that the CMP polishing agent accumulates.
- the polishing conditions are not limited, but the rotation speed of the platen is preferably 200 r or less so that the substrate does not pop out, and the pressure applied to the substrate (polishing pressure) does not cause scratches after polishing. Particularly, it is preferably about 98 kPa (1 kg Zcm 2 ) or less.
- the slurry of the present invention is continuously supplied between the polishing cloth and the film to be polished by a pump or the like.
- the supply amount of the abrasive is not limited, but it is preferable that the surface of the polishing cloth is always covered with the abrasive.
- the convex portions be selectively polished.
- the CMP abrasive of the present invention the acetylene-bonded portion of the organic compound having an acetylene bond is adsorbed on the film to be polished.
- the convex portions are selectively polished to achieve high flatness.
- the polishing liquid further contains a water-soluble polymer compound composed of a polymer of a vinyl compound, the flatness is further improved.
- the semiconductor substrate is preferably washed well in running water, and after removing water droplets attached to the semiconductor substrate using a spin dryer or the like, it is preferable to dry the semiconductor substrate.
- Examples of the CMP method of the present invention for 'preparing an inorganic insulating film to which the polishing agent and the polishing method are applied' include a low-pressure CVD method and a plasma CVD method.
- a silicon oxide film formed by low pressure CVD method, mono Sila in as the S i source: as the S i H 4 s oxygen source oxygen: 0 2 is used. This can be obtained by carrying out this SiH 4 —O 2 -based oxidation reaction at a low temperature of 400 ° C or lower. In some cases, heat treatment is performed at 100 ° C. or lower after CVD.
- Hot Li disadvantageous in order to surface flattening by loan: When the de Solo flop P is, S i H 4 - O 2 - PH 3 system arbitrarily favored and the call using a reactive gas.
- Plasma CVD has the advantage that chemical reactions that require high temperatures under normal thermal equilibrium can be performed at low temperatures.
- the substrate temperature is preferably in the range of 250 ° C to 400 ° C
- the reaction pressure is preferably in the range of 67 to 400Pa.
- the silicon oxide film to which the polishing agent and the polishing method of the present invention are applied may be doped with an element such as phosphorus or boron.
- a silicon nitride film formed by low pressure CVD method, S i source and to Axis Rorushira emissions: S i H 2 C l 2 , A and the nitrogen source ammonia: NH 3 is used.
- the S i H 2 C 1 2 - I Ri obtained and this to take place NH 3 based oxidation reaction at a high temperature of 9 0 O t.
- the substrate temperature is preferably 300: up to 400 ° C.
- the CMP polishing agent and the polishing method of the present invention are not limited to a silicon oxide film formed on a semiconductor substrate, but are also formed on a wiring board having predetermined wiring, a silicon oxide film, an inorganic insulating film such as glass and silicon nitride, Optical glass such as films mainly containing polysilicon, Al, Cu, Ti, TiN, W, Ta, TaN, etc., photomask lenses, prisms, etc., ITO Inorganic conductive films such as optical integrated circuits
- the present invention can be applied to polishing of a sapphire substrate for a blue laser LED, a semiconductor single crystal such as SiC, GaP, and GaAs, a glass substrate for a magnetic disk, and a magnetic head.
- cerium carbonate hydrate 2 kg was placed in an alumina container and calcined in air at 850 ° C for 2 hours to obtain cerium oxide powder.
- a mixture of 1 kg of the cerium oxide particles prepared above, 23 g of an aqueous solution of polyacrylic acid ammonium salt (40% by weight), and 8977 g of deionized water was mixed with ultrasonic waves while stirring. Minutes to obtain a slurry.
- the resulting slurry was filtered through a 1-micron filter, and further deionized water was added to obtain a cell oxide slurry containing 5.0% by weight of cell oxide.
- An 8-inch (20.3 cm) diameter line / line with a line / spacing width of 0.05 to 5111] 11 and a height of 100011111 is placed on the Si substrate.
- an insulating film layer pattern wafer having a silicon oxide film formed to a thickness of 2000 nm by a TEOS-plasma CVD method was fabricated.
- This insulating film layer pattern wafer (hereinafter, referred to as a wafer (1)) was set in a holder of a polishing apparatus (polishing apparatus: EPO 11 1 manufactured by Ebara Corporation). A holder was placed on a polishing platen of the polishing apparatus to which a polishing pad (polishing cloth) made of porous urethane resin was attached, with the silicon oxide film (insulating film) surface of the wafer facing down.
- a polishing apparatus polishing apparatus: EPO 11 1 manufactured by Ebara Corporation
- the insulating film of the wafer (1) is polished for 3 minutes while supplying the CMP polishing agent (1) prepared above between the insulating film and the polishing cloth (platen rotation speed: 80 rpm, head rotation speed: 80 rpm, polishing load: 200 kPa, and abrasive supply amount: 200 ml Z minute).
- the level difference between the convex and concave portions after polishing was 40 nm, indicating high flatness.
- a silicon oxide film is formed on an 8-inch wafer by a plasma CVD method (hereinafter, referred to as a wafer (2A)), and a silicon nitride film is formed on a wafer of the same diameter by a low-pressure plasma CVD method. No. (hereinafter, referred to as a wafer (2B)).
- the silicon oxide film and silicon nitride film of this wafer (2A, 2B) are polished for 1 minute using the above-mentioned CMP abrasive (0 (platen rotation speed: 80 rpm, head rotation speed: 80 rpm).
- Polishing load 200 kPa, abrasive supply: 200 m1 / min
- the difference in film thickness before and after polishing was measured using an optical interference type film thickness measuring device, and the polishing rate was measured.
- the polishing rate of the silicon oxide film on the wafer (2A) is 220 nmZ
- the polishing rate of the silicon nitride film on the wafer (2B) is 52 nmZ.
- the ratio was 4.2.
- the silicon oxide film after polishing the wafer (2A) was replaced with a KLAT encor Wafer Defect Detector product name “Surfscan 6220” and an Olympus wafer appearance.
- the number of polishing scratches of 0.2 m or more was counted using the inspection microscope product name “AL-20000”, and it was 15 wafers / wafer.
- a convex part with a side of 350 nm to 0.1 mm square and a concave part with a depth of 400 nm are formed, and the convex part density is 2 to 40 nm, respectively.
- a shallow wrench separation layer pattern wafer was prepared.
- a silicon nitride film having a thickness of 100 nm was formed on the projections, and a silicon oxide film was formed thereon by a TEOS—plasma CVD method to form a silicon oxide film (hereinafter, referred to as a pattern wafer (3)).
- this pattern wafer (3) was polished for 2 minutes (platen rotation speed: 80 rpm, head rotation speed: 80 rpm, polishing load: 20 k) Pa, abrasive supply amount: 200 m1Z). As a result, the step after polishing was 40 nm, showing high flatness.
- the cerium oxide slurry prepared in Example 1 was used in an amount of 7500 g, 2,4,7,9-tetramethyl-5-decyne-1,4,7-diol.
- a mixture of 50 g of toxilate (a reagent manufactured by Aldrich, supra) and 420 g of water was mixed to obtain a concentration of an organic compound having an acetylene bond of 1.0% by weight and a concentration of cerium oxide particles of 0%. 0.75% by weight of CMP polishing slurry (hereinafter referred to as CMP polishing slurry (2)).
- the pH of the CPM abrasive (2) was 8.4.
- polishing the wafer (1) for 3 minutes using the above CMP abrasive (2) (Ebara Corporation polishing equipment: EPO11, platen rotation speed: 50 rpm, head rotation speed: 50 rpm, Polishing load: 30 kPa, abrasive supply: 200 m1 / min).
- CMP abrasive (2) Ebara Corporation polishing equipment: EPO11, platen rotation speed: 50 rpm, head rotation speed: 50 rpm, Polishing load: 30 kPa, abrasive supply: 200 m1 / min.
- the above-mentioned CMP polishing slurry (2) was used under the same polishing conditions as the wafer (1) of this embodiment.
- the polishing rate of the silicon oxide film was 29 nm / min
- the polishing rate of the silicon nitride film was 68 nm / min
- the polishing rate ratio was 4.26.
- the polished silicon oxide film was counted for polishing scratches of 0.2 ⁇ m or more in the same manner as in Example 1, and there were 15 Z wafers.
- the pattern wafer (3) was polished with the CMP polisher (2) for 3 minutes under the same polishing conditions as in (8) of this example.
- the step after polishing was 50 nm, indicating high flatness.
- Wafer (1) was polished for 3 minutes under the same polishing conditions as wafer (1) of Example 2 using the above CMP polisher (3).
- the level difference between the convex and concave portions after polishing was 20 nm, indicating high flatness.
- the silicon oxide film and the silicon nitride film of the wafer (2A, 2B) were polished for one minute under the same polishing conditions as the wafer (2A, 2B) of the second embodiment (3).
- the polishing rate of the silicon oxide film was 50 nm / min
- the polishing rate of the silicon nitride film was 65 nmZ
- the polishing rate ratio was 0.777.
- the polishing scratches of 0.2 ⁇ m or more were counted using the polished silicon oxide film in the same manner as in Example 1. As a result, 15 wafers / wafer were obtained.
- the pattern wafer (3) was polished using the CMP abrasive (3) under the same polishing conditions as the wafer (3) of Example 2 except that the polishing time was set to 200 seconds. As a result, the step after polishing was 10 nm, indicating high flatness.
- the cerium oxide slurry described in Example 1 was diluted three times with a deionized tube (cerium oxide particle concentration: 1.67% by weight), and the one obtained without adding the organic compound described in Example 1 was used.
- CMP abrasive was used.
- the pH of this abrasive was 7.0. (Polishing of insulating film layer and shallow trench separation layer)
- the wafer (1) was prepared under the same conditions as in Example 1 except that the above-mentioned CMP abrasive (cerium oxide particles: 1.67% by weight) was used.
- the wafer (2A, 2B) was polished for 1 minute
- the patterned wafer (3) was polished for 2 minutes.
- the step after polishing of the wafer (1) was found to be 150 nm, indicating that the flatness was remarkably poor.
- the silicon oxide film after the polishing of Example 8 (2A) was polished with a scratch of 0.2 m or more in the same manner as in Example 1. As a result, 30 Z wafers were obtained.
- the patterned wafer (3) had a flatness of 150 nm after polishing and was poor in flatness.
- the to-be-polished surface can be highly flattened, and it is suitable for the manufacturing process of semiconductor devices, such as a semiconductor element, for example, a single-door wrench separation. is there.
- a surface to be polished such as a silicon oxide insulating film can be polished at high speed without being damaged.
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Abstract
Description
Claims
Priority Applications (4)
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US10/524,064 US7311855B2 (en) | 2002-08-09 | 2003-08-06 | Polishing slurry for chemical mechanical polishing and method for polishing substrate |
AU2003254825A AU2003254825A1 (en) | 2002-08-09 | 2003-08-06 | Cmp abrasive and substrate polishing method |
JP2004527345A JP4415854B2 (ja) | 2002-08-09 | 2003-08-06 | Cmp研磨剤および基板の研磨方法 |
US11/905,279 US8231735B2 (en) | 2002-08-09 | 2007-09-28 | Polishing slurry for chemical mechanical polishing and method for polishing substrate |
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JP2002/233702 | 2002-08-09 | ||
JP2002233702 | 2002-08-09 | ||
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JP2003059280 | 2003-03-06 |
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US11/905,279 Division US8231735B2 (en) | 2002-08-09 | 2007-09-28 | Polishing slurry for chemical mechanical polishing and method for polishing substrate |
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JP (2) | JP4415854B2 (ja) |
KR (1) | KR100714246B1 (ja) |
CN (1) | CN100339954C (ja) |
AU (1) | AU2003254825A1 (ja) |
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EP2502969A1 (en) | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
JP2017011162A (ja) * | 2015-06-24 | 2017-01-12 | 日立化成株式会社 | 研磨液の製造方法、研磨液及び研磨方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0897744A1 (en) * | 1993-11-29 | 1999-02-24 | Air Products And Chemicals, Inc. | Waterborne coating and ink comprising ethoxylated acetylenic glycols having low dynamic surface tension |
JP2001023938A (ja) * | 1999-07-07 | 2001-01-26 | Tama Kagaku Kogyo Kk | Cmp用研磨剤 |
JP2001185514A (ja) * | 1999-12-27 | 2001-07-06 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US20010009840A1 (en) * | 2000-01-18 | 2001-07-26 | Kazuya Orii | Lapping oil composition for finish-grinding |
US6383239B1 (en) * | 1999-03-15 | 2002-05-07 | Tokyo Magnetic Printing Co., Ltd. | Free abrasive slurry composition and a grinding method using the same |
JP2002134444A (ja) * | 2000-10-26 | 2002-05-10 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2002294222A (ja) * | 2001-03-29 | 2002-10-09 | Tokyo Magnetic Printing Co Ltd | 遊離砥粒スラリー組成物 |
JP2003128910A (ja) * | 2001-10-17 | 2003-05-08 | Rodel Nitta Co | 研磨パッド |
JP2003168660A (ja) * | 2001-11-30 | 2003-06-13 | Toshiba Corp | 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0546728A3 (en) * | 1991-12-13 | 1993-09-08 | Alcon Laboratories Inc | Physiological tear compositions and methods for their preparation |
JP3335667B2 (ja) | 1992-05-26 | 2002-10-21 | 株式会社東芝 | 半導体装置の製造方法 |
JP3258427B2 (ja) * | 1993-04-22 | 2002-02-18 | 川崎マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US5532191A (en) | 1993-03-26 | 1996-07-02 | Kawasaki Steel Corporation | Method of chemical mechanical polishing planarization of an insulating film using an etching stop |
JP3514908B2 (ja) * | 1995-11-13 | 2004-04-05 | 株式会社東芝 | 研磨剤 |
JPH09168966A (ja) * | 1995-12-19 | 1997-06-30 | Mitsubishi Chem Corp | ハードディスク基板の研磨用組成物 |
JPH09270402A (ja) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JP4323012B2 (ja) | 1999-07-21 | 2009-09-02 | 株式会社トッパンTdkレーベル | 遊離砥粒スラリー組成物 |
US6238450B1 (en) * | 1999-06-16 | 2001-05-29 | Saint-Gobain Industrial Ceramics, Inc. | Ceria powder |
MY118582A (en) * | 2000-05-12 | 2004-12-31 | Kao Corp | Polishing composition |
JP4195212B2 (ja) * | 2000-10-23 | 2008-12-10 | 花王株式会社 | 研磨液組成物 |
JP2002203819A (ja) | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US6612911B2 (en) | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
JP2002217139A (ja) * | 2001-01-17 | 2002-08-02 | Hitachi Chem Co Ltd | Cmp研磨剤 |
US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
CN100369211C (zh) * | 2002-07-22 | 2008-02-13 | 清美化学股份有限公司 | 半导体用研磨剂、该研磨剂的制造方法和研磨方法 |
-
2003
- 2003-08-05 TW TW092121344A patent/TWI256971B/zh not_active IP Right Cessation
- 2003-08-06 CN CNB038189461A patent/CN100339954C/zh not_active Expired - Lifetime
- 2003-08-06 AU AU2003254825A patent/AU2003254825A1/en not_active Abandoned
- 2003-08-06 KR KR1020057001478A patent/KR100714246B1/ko active IP Right Grant
- 2003-08-06 US US10/524,064 patent/US7311855B2/en not_active Expired - Lifetime
- 2003-08-06 JP JP2004527345A patent/JP4415854B2/ja not_active Expired - Lifetime
- 2003-08-06 WO PCT/JP2003/010001 patent/WO2004015021A1/ja active Application Filing
-
2007
- 2007-09-28 US US11/905,279 patent/US8231735B2/en not_active Expired - Lifetime
-
2009
- 2009-06-23 JP JP2009148677A patent/JP4952745B2/ja not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0897744A1 (en) * | 1993-11-29 | 1999-02-24 | Air Products And Chemicals, Inc. | Waterborne coating and ink comprising ethoxylated acetylenic glycols having low dynamic surface tension |
US6383239B1 (en) * | 1999-03-15 | 2002-05-07 | Tokyo Magnetic Printing Co., Ltd. | Free abrasive slurry composition and a grinding method using the same |
JP2001023938A (ja) * | 1999-07-07 | 2001-01-26 | Tama Kagaku Kogyo Kk | Cmp用研磨剤 |
JP2001185514A (ja) * | 1999-12-27 | 2001-07-06 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
US20010009840A1 (en) * | 2000-01-18 | 2001-07-26 | Kazuya Orii | Lapping oil composition for finish-grinding |
JP2002134444A (ja) * | 2000-10-26 | 2002-05-10 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
JP2002294222A (ja) * | 2001-03-29 | 2002-10-09 | Tokyo Magnetic Printing Co Ltd | 遊離砥粒スラリー組成物 |
JP2003128910A (ja) * | 2001-10-17 | 2003-05-08 | Rodel Nitta Co | 研磨パッド |
JP2003168660A (ja) * | 2001-11-30 | 2003-06-13 | Toshiba Corp | 銅のcmp用研磨スラリーおよびそれを用いた半導体装置の製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324106C (zh) * | 2004-07-15 | 2007-07-04 | 捷时雅株式会社 | 化学机械研磨用水性分散剂以及化学机械研磨方法 |
EP1868769A2 (en) * | 2005-04-08 | 2007-12-26 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
EP1868769A4 (en) * | 2005-04-08 | 2010-03-10 | Ferro Corp | THICK SUSPENSION COMPOSITION AND METHOD FOR POLISHING OPHTHALMIC SUBSTRATES BASED ON ORGANIC POLYMER |
US8361419B2 (en) | 2005-09-20 | 2013-01-29 | Lg Chem, Ltd. | Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same |
JP2011223018A (ja) * | 2005-11-11 | 2011-11-04 | Hitachi Chem Co Ltd | 酸化ケイ素用研磨剤、添加液および研磨方法 |
JP2012044197A (ja) * | 2005-11-11 | 2012-03-01 | Hitachi Chem Co Ltd | 酸化ケイ素用研磨剤、添加液および研磨方法 |
WO2008136593A1 (en) * | 2007-05-03 | 2008-11-13 | Lg Chem, Ltd. | Cerium oxide powder for abrasive and cmp slurry comprising the same |
JP2010526433A (ja) * | 2007-05-03 | 2010-07-29 | エルジー・ケム・リミテッド | 研磨材用酸化セリウム粉末及びこれを含むcmpスラリー |
US8333815B2 (en) | 2007-05-03 | 2012-12-18 | Lg Chem, Ltd. | Cerium oxide powder for abrasive and CMP slurry comprising the same |
Also Published As
Publication number | Publication date |
---|---|
JP4952745B2 (ja) | 2012-06-13 |
KR100714246B1 (ko) | 2007-05-02 |
TWI256971B (en) | 2006-06-21 |
JPWO2004015021A1 (ja) | 2005-12-02 |
US20060124591A1 (en) | 2006-06-15 |
US8231735B2 (en) | 2012-07-31 |
JP2009218619A (ja) | 2009-09-24 |
US20080176982A1 (en) | 2008-07-24 |
CN1675331A (zh) | 2005-09-28 |
CN100339954C (zh) | 2007-09-26 |
TW200402464A (en) | 2004-02-16 |
US7311855B2 (en) | 2007-12-25 |
AU2003254825A1 (en) | 2004-02-25 |
JP4415854B2 (ja) | 2010-02-17 |
KR20050026524A (ko) | 2005-03-15 |
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