TWI256971B - CMP abrasive and method for polishing substrate - Google Patents

CMP abrasive and method for polishing substrate

Info

Publication number
TWI256971B
TWI256971B TW092121344A TW92121344A TWI256971B TW I256971 B TWI256971 B TW I256971B TW 092121344 A TW092121344 A TW 092121344A TW 92121344 A TW92121344 A TW 92121344A TW I256971 B TWI256971 B TW I256971B
Authority
TW
Taiwan
Prior art keywords
cmp abrasive
cmp
polishing
polishing substrate
insulating layer
Prior art date
Application number
TW092121344A
Other languages
English (en)
Other versions
TW200402464A (en
Inventor
Kouji Haga
Yuto Ootuki
Yasushi Kurata
Kazuhiro Enomoto
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200402464A publication Critical patent/TW200402464A/zh
Application granted granted Critical
Publication of TWI256971B publication Critical patent/TWI256971B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW092121344A 2002-08-09 2003-08-05 CMP abrasive and method for polishing substrate TWI256971B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002233702 2002-08-09
JP2003059280 2003-03-06

Publications (2)

Publication Number Publication Date
TW200402464A TW200402464A (en) 2004-02-16
TWI256971B true TWI256971B (en) 2006-06-21

Family

ID=31719876

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121344A TWI256971B (en) 2002-08-09 2003-08-05 CMP abrasive and method for polishing substrate

Country Status (7)

Country Link
US (2) US7311855B2 (zh)
JP (2) JP4415854B2 (zh)
KR (1) KR100714246B1 (zh)
CN (1) CN100339954C (zh)
AU (1) AU2003254825A1 (zh)
TW (1) TWI256971B (zh)
WO (1) WO2004015021A1 (zh)

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US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
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US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
KR20080011044A (ko) * 2006-07-28 2008-01-31 주식회사 엘지화학 산화세륨 분말, 그 제조방법, 및 이를 포함하는ｃｍｐ슬러리
US8388710B2 (en) * 2005-01-26 2013-03-05 Lg Chem, Ltd. Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same
JPWO2006098141A1 (ja) * 2005-03-16 2008-08-21 旭硝子株式会社 半導体集積回路装置用研磨剤、研磨方法および半導体集積回路装置の製造方法
US7294044B2 (en) * 2005-04-08 2007-11-13 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US8361419B2 (en) 2005-09-20 2013-01-29 Lg Chem, Ltd. Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same
WO2007046420A1 (ja) * 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法
US20070175104A1 (en) * 2005-11-11 2007-08-02 Hitachi Chemical Co., Ltd. Polishing slurry for silicon oxide, additive liquid and polishing method
US20090325323A1 (en) * 2006-07-18 2009-12-31 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, production method thereof, and chemical mechanical polishing method
WO2008136593A1 (en) * 2007-05-03 2008-11-13 Lg Chem, Ltd. Cerium oxide powder for abrasive and cmp slurry comprising the same
JP5220428B2 (ja) * 2008-02-01 2013-06-26 株式会社フジミインコーポレーテッド 研磨用組成物を用いた研磨方法
DE102008008184A1 (de) * 2008-02-08 2009-08-13 Evonik Degussa Gmbh Verfahren zum Polieren einer Siliciumoberfläche mittels einer ceroxidhaltigen Dispersion
TW201038690A (en) 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
KR101050789B1 (ko) * 2009-09-21 2011-07-20 주식회사 엘지화학 탄산세륨계 화합물의 제조 방법, 산화세륨의 제조 방법 및 결정성 산화세륨
WO2011058816A1 (ja) * 2009-11-12 2011-05-19 日立化成工業株式会社 Ｃｍｐ研磨液、並びに、これを用いた研磨方法及び半導体基板の製造方法
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
KR101469258B1 (ko) * 2009-12-31 2014-12-09 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
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JP2017011162A (ja) * 2015-06-24 2017-01-12 日立化成株式会社 研磨液の製造方法、研磨液及び研磨方法

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US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
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Also Published As

Publication number Publication date
CN1675331A (zh) 2005-09-28
WO2004015021A1 (ja) 2004-02-19
JPWO2004015021A1 (ja) 2005-12-02
JP4952745B2 (ja) 2012-06-13
JP2009218619A (ja) 2009-09-24
TW200402464A (en) 2004-02-16
JP4415854B2 (ja) 2010-02-17
CN100339954C (zh) 2007-09-26
US8231735B2 (en) 2012-07-31
KR20050026524A (ko) 2005-03-15
US7311855B2 (en) 2007-12-25
KR100714246B1 (ko) 2007-05-02
AU2003254825A1 (en) 2004-02-25
US20080176982A1 (en) 2008-07-24
US20060124591A1 (en) 2006-06-15

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