WO2004012325A1 - Ac/ac電力変換のための電力モジュール - Google Patents
Ac/ac電力変換のための電力モジュール Download PDFInfo
- Publication number
- WO2004012325A1 WO2004012325A1 PCT/JP2003/009623 JP0309623W WO2004012325A1 WO 2004012325 A1 WO2004012325 A1 WO 2004012325A1 JP 0309623 W JP0309623 W JP 0309623W WO 2004012325 A1 WO2004012325 A1 WO 2004012325A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase
- power module
- power
- pair
- diodes
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M5/4585—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
- H02M1/4216—Arrangements for improving power factor of AC input operating from a three-phase input voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- the design depends on the type of power supply (200V, 100V, 400V, ..., etc.) and the load side, such as 200V motor and 400V motor. It has to be changed according to each application category, such as type. This leads to an increase in model types, which means an increase in the cost of the final product.
- a plurality of converter parts constituting a polyphase converter, a plurality of smoothing capacitors, and a plurality of inverter parts constituting a polyphase inverter have a required wiring.
- the three-phase converter includes a transistor connected in series with each other for each phase, a pair of first diodes connected in reverse, an emitter terminal of the transistor, and a collector.
- a pair of connection points facing each other are connected to the connector terminals, and the other pair of connection points is composed of a diode bridge set as an input / output point, and at least according to the specifications required for the power module.
- Some transistors and A diode bridge is mounted on the substrate, and at least a part of the first diode is mounted on the substrate according to specifications required for the power module.A necessary jumper is provided. That is.
- the three-phase converter includes a transistor and a pair of first diodes connected in series with each other for each phase, and an emitter terminal and a collector of the transistor. It consists of a pair of reverse-connected second diodes connected in series with each other between terminals, and at least some of the transistors and the second diode are mounted on the substrate according to the specifications required for the power module. In addition to being mounted, at least a part of the first diode is mounted on the substrate according to the specification required for the power module, and necessary jumper means are provided.
- the three-phase converter is a pair of transistors connected in series with each other for each phase. And at least some of the diodes and Z or at least some of the transistors and diodes depending on the specifications required for the power module. Since it is mounted and equipped with necessary jumpers, various power modules such as three-phase to three-phase conversion and single-phase to three-phase conversion can be easily realized.
- the three-phase inverter is connected in parallel with one pair of transistors connected in series with each other for each phase and each transistor. Since at least some of the transistors and diodes are mounted on the board according to the specifications required for the power module and the necessary jumper means are provided, the power supply Various power modules that can clear the IEC regulations on harmonics can be easily realized.
- the three-phase converter includes a transistor and a transistor connected in series with each other for each phase. And a pair of oppositely connected first diodes, a pair of opposite connection points connected to the emitter terminal and collector terminal of the transistor, and another pair of connection points set as input / output points. And at least a part of the first diode is mounted on the board according to the specifications required for the power module, and necessary jumper means are provided.
- Various power modules such as three-phase to three-phase conversion and single-phase to three-phase conversion can be easily realized.
- the power module for ACZAC power conversion according to claim 19 wherein the three-phase converter includes a transistor connected in series with each other for each phase, a pair of first diodes connected in reverse, and an emitter of the transistor.
- One pair of connection points facing each other is connected to the terminal and collector terminal, and the other
- the connection point is composed of a diode bridge set as an input / output point, and at least only a part of the first diode is mounted on the board according to specifications required for the power module, and Since the necessary jumpers are provided, various power modules such as three-phase to three-phase conversion and single-phase to three-phase conversion can be easily realized.
- FIG. 3 is an electric circuit diagram showing a basic topology of the power module of the first type.
- FIG. 11 is a schematic diagram showing still another configuration example of the power module of the first type.
- FIG. 12 shows yet another configuration example of the first type of power module.
- FIG. 21 is an electrical schematic diagram showing the basic topology of a third type of power module.
- FIG. 29 is a schematic diagram showing still another configuration example of the third type of power module.
- FIG. 32 is a schematic diagram showing a modified example of the power module of FIG.
- FIG. 33 is a schematic diagram showing a modified example of the power module of FIG.
- FIG. 34 is a schematic diagram showing a modified example of the power module of FIG.
- FIG. 35 is a schematic diagram showing a modified example of the power module of FIG.
- FIG. 36 is a schematic diagram showing a modification of the power module in FIG.
- FIG. 37 is a schematic diagram showing a modified example of the power module of FIG.
- FIG. 38 is a schematic diagram showing a modification of the power module of FIG.
- FIG. 39 is a schematic diagram showing a modified example of the power module of FIG.
- FIG. 40 is a schematic diagram showing a modification of the power module of FIG. FIG.
- the first type is based on a boost type topology.
- the single-phase to three-phase power module shown in Fig. 10 is composed of two surface-mounted diodes 2 and two surface-mounted IGBT switches 1 and two load- It consists of 20 6 surface-mounting diodes 4 and 6 surface-mounting IGBT switches 3.
- the power module used a voltage doubler topology to increase the output voltage (a pair of surface mounted smoothing capacitors 5 were connected in series). It is adopted for applications where the input power is low (eg, 100 V in Japan) and the IEC regulation is valid.
- This three-phase one-to-three phase power module can be modified by changing only the type of surface mounted power device, according to the specific application requirements, such as:
- the three-phase to three-phase power module shown in Fig. 15 consists of six surface-mounted diodes 12 of the power grid-side converter 10 and six surface-mounted diodes 4 and 6 of the load-side comparator 20. And two surface-mounted IGBT switches 3. Adopted for applications where only efficiency is considered. It should be noted that, instead of providing the reactor 6 on the input side of the converter 10 on the transmission equipment network side, a rear reactor 8 is externally provided between the converter 10 on the transmission equipment network side and the smoothing capacitor 5.
- the three-phase to three-phase power module shown in Fig. 17 is composed of two surface-mounting diodes 12, 2 and 3 and two surface-mounting IGBT switches 11 of the converter 10 on the grid side. It is composed of six surface-mounting diodes 4 and six surface-mounting IGBT switches 3 of the load-side amplifier 20 and a pair of smoothing capacitors 5 for voltage doubler. Controlling the DC link voltage to reduce the harmonic currents on the grid side by controlling the two surface mounted IGBT switches 11 and to reduce the rated current of the IGBT switches on the load side Can be. Then, by reducing the total number of active switches of the power transmission facility network side converter 10, the switching loss can be reduced and the efficiency can be increased.
- the three-phase power module in Fig. 44 differs from the three-phase one-three-phase power module in Fig. 17 in that a smoothing capacitor 5 is externally connected via a junction (lead connection line). Only. Therefore, controlling the two surface-mounted IGB T switches 11 reduces the harmonic current on the power transmission network side and reduces the rated current of the IGBT switch on the load side DC link voltage can be controlled to reduce Then, by reducing the total number of active switches of the converter 10 on the transmission equipment network side, switching loss can be reduced and efficiency can be increased.
- the difference between the single-phase and three-phase power modules shown in Fig. 47 and the single-phase and three-phase power modules shown in Fig. 20 is that the smoothing capacitor 5 is connected through the junction (lead-out connection line). Only the attached points. Therefore, 1
- the harmonic current on the power transmission network side is reduced, and the DC link voltage is controlled to reduce the rated current of the IGBT switch 3 and diode 4 of the load-side inverter 20. You can control.
- By reducing the total number of active switches on both sides switching losses can be reduced and efficiency can be increased. And IEC regulations are adopted for valid applications.
- the proposed three-phase one-three-phase system can be integrated into a single module using surface-mounted IGBTs and diode devices, similar to an integrated IGBT standard module. It is accumulated.
- Surface mounted IGB T and diode devices are designed according to the input and output conditions shown in Table 3.
- the three-phase to three-phase power module shown in Fig. 22 is composed of three surface-mounted diodes 14 and 1 on the power transmission network side that constitute the knock-boost type converter 10. It consists of five and three surface-mounted IGBT switches 11 and six surface-mounted diodes 4 and six surface-mounted IGBT switches 3 of the loader 20. Controlling three IGBT switches 11 reduces harmonic currents on the grid side, and increases DC link voltage from zero volts to maximum input voltage to assume pulse amplitude modulation (PAM) control Can be controlled up to. Also, by increasing the DC voltage in the high power region, the rated current of the IGBT switch 3 and the diode 4 of the load inverter can be reduced.
- PAM pulse amplitude modulation
- Reactor 16 is connected in parallel with a series circuit of surface-mounted IGBT switch 11 and a pair of diodes 14 in a forward connection, and diode 17 is connected in reverse between reactor 16 and smoothing capacitor 5. are doing. Therefore, a step-up / step-down operation can be performed.
- the reactor 6 is connected to the input side, and the capacitor 7 is connected between the input side terminals.
- the difference between the single-phase, three-phase power module in Fig. 48 and the single-phase, three-phase power module in Fig. 22 is that the smoothing capacitor 5 and the reactor are connected via the junction (lead connection line). Only at the point where the torque is there.
- controlling the three IGBT switches 11 reduces harmonic currents on the grid side and reduces the DC link voltage from zero-port to the maximum input voltage in order to assume pulse-amplitude modulation (PAM) control. It can be controlled until it exceeds.
- PAM pulse-amplitude modulation
- the rated current of the IGBT switch 3 and the diode 4 of the load-side inverter can be reduced.
- Surface mount I Connect a reactor 16 in parallel with the GBT switch 11 and a series connection of a pair of diodes 14 in a forward connection, and reverse the diode 17 between this reactor 16 and the smoothing capacitor 5. Connected. Therefore, a step-up / step-down operation can be performed.
- the rear turtle 6 is connected to the input side, and the capacitor 7 is connected between the input side terminals.
- the three-phase-one three-phase power module shown in Fig. 23 has three surface-mounted diodes 1'3 on the power transmission network side that constitutes the knock 'type converter 10 and three surface-mounted I It consists of a GBT switch 11 1, six surface-mounted diodes 4 on the load side and six surface-mounted IGBT switches 3. Controlling the three IGBT switches 11 reduces harmonic currents on the grid side and reduces the DC link voltage from zero-port to the maximum input voltage to assume pulse-amplitude modulation (PAM) control. By increasing the DC voltage in the high power region, the rated current of the IGBT switch 3 and diode 4 of the load-side inverter can be reduced.
- PAM pulse-amplitude modulation
- controlling the 3 'IGBT switches 11 reduces harmonic currents on the grid side and reduces the DC link voltage from zero volts to the maximum input voltage to assume pulse amplitude modulation (PAM) control.
- PAM pulse amplitude modulation
- the rated current of the IGBT switch 3 and diode 4 in the load side park can be reduced.
- Surface mount IGBT switch 11 Connect a diode 18 in parallel with the series circuit of a pair of diodes 14 connected in series, and a reactor 19 between this diode 18 and the smoothing capacitor 5. are doing. Therefore, a step-down operation can be performed.
- the rear turtle 6 is connected to the input side, and the capacitor 7 is connected between the input side terminals.
- the three-phase-one three-phase power module shown in Fig. 24 has six surface-mounted diodes 14 on the power transmission network side converter 10, and six surface-mounted diodes 4 and six on the load side. Mounting IGBT switch 3. Adopted for applications where only efficiency is considered. Note that, instead of providing the reactor 6 on the input side of the power transmission facility network side converter 10, a reactor 8 is externally provided between the power transmission facility network side converter 10 and the smoothing capacitor 5.
- the proposed three-phase to three-phase power module can be modified to a single-phase to three-phase power module by changing only the type of surface-mounted power device according to the specific application conditions, such as: be able to.
- Reactor 16 is connected in parallel with the series circuit of surface-mount IGBT switch 11 and a pair of forward-connected diodes 14, and diode 17 is connected in reverse between this reactor 16 and smoothing capacitor 5. Continued. Therefore, a step-up / step-down operation can be performed.
- the reactor 6 is connected to the input side, and the capacitor 7 is connected between the input side terminals.
- the single-phase to three-phase power module shown in Fig. The only difference from the power module is that the smoothing capacitor 5 is externally connected via the junction (lead connection line). Therefore, a step-down operation can be performed.
- the rear turtle 6 is connected to the input side, and the capacitor 7 is connected between the input side terminals.
- the single-phase to three-phase power module in Fig. 30 is an extended version of the circuit in Fig. 27. Specifically, the smoothing capacitor 5 and the rear tank 19 are omitted. Adopted to completely eliminate reactors and capacitors from circuit topologies for applications where IEC regulations are effective. .
- the invention of claim 5 has a unique effect that various power modules that can meet the IEC regulations on power supply harmonics can be easily realized.
- the power supply harmonics can be reduced by the reactor, and the same effects as those of the third or sixth aspect can be obtained.
- the invention of claim 13 achieves the step-down and has the same effect as that of claim 8.
- the invention of claim 17 has a unique effect that various power modules such as three-phase to three-phase conversion and single-phase to three-phase conversion can be easily realized.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Rectifiers (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004524183A JPWO2004012325A1 (ja) | 2002-07-30 | 2003-07-30 | Ac/ac電力変換のための電力モジュール |
US10/522,708 US7535737B2 (en) | 2002-07-30 | 2003-07-30 | AC/AC multiple-phase power converter configured to be mounted on a substrate |
EP03771412.8A EP1544989A4 (en) | 2002-07-30 | 2003-07-30 | POWER MODULE FOR AC / AC POWER CONVERSION |
AU2003254780A AU2003254780A1 (en) | 2002-07-30 | 2003-07-30 | Power module for ac/ac power conversion |
US12/330,123 US7924586B2 (en) | 2002-07-30 | 2008-12-08 | Substrate for AC/AC multiple-phase power converter |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002221916 | 2002-07-30 | ||
JP2002-221916 | 2002-07-30 | ||
JP2003-121038 | 2003-04-25 | ||
JP2003121038 | 2003-04-25 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10522708 A-371-Of-International | 2003-07-30 | ||
US12/330,123 Division US7924586B2 (en) | 2002-07-30 | 2008-12-08 | Substrate for AC/AC multiple-phase power converter |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004012325A1 true WO2004012325A1 (ja) | 2004-02-05 |
Family
ID=31190333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/009623 WO2004012325A1 (ja) | 2002-07-30 | 2003-07-30 | Ac/ac電力変換のための電力モジュール |
Country Status (5)
Country | Link |
---|---|
US (2) | US7535737B2 (ja) |
EP (1) | EP1544989A4 (ja) |
JP (2) | JPWO2004012325A1 (ja) |
AU (1) | AU2003254780A1 (ja) |
WO (1) | WO2004012325A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008061414A (ja) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
WO2008117650A1 (ja) * | 2007-03-28 | 2008-10-02 | Daikin Industries, Ltd. | 主回路モジュール |
JP2011239547A (ja) * | 2010-05-10 | 2011-11-24 | Mitsubishi Electric Corp | 基準回路モジュール、三相インバータ回路、整流回路、pam回路、一石型pam回路、ハーフブリッジ/インターリーブ回路、および空気調和装置 |
JP2012135195A (ja) * | 2010-12-21 | 2012-07-12 | General Electric Co <Ge> | 発電システムを動作させるための方法およびシステム |
JP5611496B1 (ja) * | 2013-12-26 | 2014-10-22 | 三菱電機株式会社 | 電力変換装置 |
JP2018531576A (ja) * | 2015-10-20 | 2018-10-25 | クリー ファイエットヴィル インコーポレイテッド | 高電圧電力モジュール |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US7535737B2 (en) * | 2002-07-30 | 2009-05-19 | Daikin Industries, Ltd. | AC/AC multiple-phase power converter configured to be mounted on a substrate |
KR100884791B1 (ko) * | 2007-04-06 | 2009-02-23 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 이의 구동 방법 |
JP5029900B2 (ja) * | 2007-11-20 | 2012-09-19 | アイシン・エィ・ダブリュ株式会社 | モータの制御装置 |
DE102010015440A1 (de) * | 2010-04-16 | 2011-10-20 | Kenersys Gmbh | Verfahren zur Stromeinspeisung und Stromeinspeisesystem |
EP2463996B1 (en) * | 2010-12-08 | 2013-06-05 | Siemens Aktiengesellschaft | AC-to-AC converter and method for converting a first frequency AC-voltage to a second frequency AC-voltage |
JP2013093947A (ja) * | 2011-10-25 | 2013-05-16 | Mitsubishi Electric Corp | 電力変換装置 |
US9030852B2 (en) | 2012-05-31 | 2015-05-12 | General Electric Company | System for power conversion utilizing matrix converters |
JP6584047B2 (ja) * | 2012-12-05 | 2019-10-02 | ダイキン工業株式会社 | パワーモジュール |
US9590521B2 (en) * | 2014-07-28 | 2017-03-07 | Hamilton Sundstrand Corporation | Power converters for aircraft starter/generators |
BR102014029406A2 (pt) * | 2014-11-25 | 2016-05-31 | Gerson Silva Paiva | gerador eletrônico trifásico |
JP6120116B2 (ja) * | 2015-10-02 | 2017-04-26 | パナソニックIpマネジメント株式会社 | 無線電力伝送システム |
USD908632S1 (en) | 2018-09-17 | 2021-01-26 | Cree Fayetteville, Inc. | Power module |
US10879812B2 (en) * | 2019-04-09 | 2020-12-29 | Wisconsin Alumni Research Foundation | Semiconductor switch |
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- 2003-07-30 EP EP03771412.8A patent/EP1544989A4/en not_active Withdrawn
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Cited By (8)
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JP2008061414A (ja) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
WO2008117650A1 (ja) * | 2007-03-28 | 2008-10-02 | Daikin Industries, Ltd. | 主回路モジュール |
JP2011239547A (ja) * | 2010-05-10 | 2011-11-24 | Mitsubishi Electric Corp | 基準回路モジュール、三相インバータ回路、整流回路、pam回路、一石型pam回路、ハーフブリッジ/インターリーブ回路、および空気調和装置 |
JP2012135195A (ja) * | 2010-12-21 | 2012-07-12 | General Electric Co <Ge> | 発電システムを動作させるための方法およびシステム |
JP5611496B1 (ja) * | 2013-12-26 | 2014-10-22 | 三菱電機株式会社 | 電力変換装置 |
WO2015097815A1 (ja) * | 2013-12-26 | 2015-07-02 | 三菱電機株式会社 | 電力変換装置 |
US9680389B2 (en) | 2013-12-26 | 2017-06-13 | Mitsubishi Electric Corporation | Power conversion device |
JP2018531576A (ja) * | 2015-10-20 | 2018-10-25 | クリー ファイエットヴィル インコーポレイテッド | 高電圧電力モジュール |
Also Published As
Publication number | Publication date |
---|---|
JPWO2004012325A1 (ja) | 2005-11-24 |
JP2009027925A (ja) | 2009-02-05 |
US7924586B2 (en) | 2011-04-12 |
US7535737B2 (en) | 2009-05-19 |
EP1544989A1 (en) | 2005-06-22 |
US20060126318A1 (en) | 2006-06-15 |
EP1544989A4 (en) | 2015-03-11 |
AU2003254780A1 (en) | 2004-02-16 |
US20090090546A1 (en) | 2009-04-09 |
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