Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
  • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
  • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
  • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
  • G03F7/70891—Temperature

Definitions

• the present invention relates to an exposure apparatus and an exposure method for transferring a pattern formed on a mask or a reticle onto a substrate such as a wafer, and a semiconductor element, a liquid crystal display element, and an imaging element using the exposure apparatus and the exposure method.
• the present invention relates to a device manufacturing method for manufacturing a thin-film magnetic head and other devices.
• a mask reticle (hereinafter, collectively referred to as a mask)
• An exposure apparatus which transfers the pattern formed in step (1) to a wafer or a glass plate (hereinafter, collectively referred to as a substrate) coated with a photosensitive agent such as a photoresist.
• a step-and-repeat type exposure apparatus for example, a reduction projection type exposure apparatus (a so-called stepper) or a step-and-scan type exposure apparatus has been frequently used.
• the step-and-repeat type exposure apparatus described above holds the substrate on a two-dimensionally movable stage, moves the substrate step by step, and transfers the reticle pattern image onto a substrate such as a wafer.
• the exposure apparatus repeats the operation of sequentially exposing each of the shot areas.
• the step-and-scan exposure apparatus described above transfers the pattern formed on the reticle pattern to the shot area while moving the reticle and wafer synchronously. This is an exposure device for sequentially transferring images onto a substrate.
• the exposure apparatus is intended to improve the resolving power and the alignment accuracy between the reticle pattern image projected through the projection optical system and the shot area of the wafer.
• the resolution For example, to shorten the wavelength of the exposure light and increase the NA of the projection optical system
• the baseline amount is the distance between the reference point of the reticle pattern image projected on the wafer (for example, the projection center) and the reference point of the off-axis alignment sensor (for example, the center of the measurement field of view). It is.
• the exposure apparatus is provided with various alignment sensors for measuring alignment marks formed on the wafer.
• One type of the alignment sensor is an off-axis type alignment sensor disposed near the side of the projection optical system. is there.
• the position obtained by correcting the measurement result of the alignment sensor with the baseline amount is the position where each shot area is arranged at the time of exposure. Therefore, by accurately managing the baseline amount, the overlay accuracy between the projected pattern and the shot area can be improved.
• the acceleration of the wafer stage is increased to shorten the time required for acceleration / deceleration.
• the acceleration and deceleration of the wafer stage and reticle stage can be improved, and the scanning speed of the wafer stage and reticle stage during exposure can be improved to reduce the time required for exposure. ing.
• the acceleration of the wafer stage or the reticle stage is increased and the acceleration / deceleration is frequently repeated in order to improve the throughput, the amount of heat generated by the motor driving the wafer stage or the motor driving the reticle stage increases. Since these motors are provided inside the exposure apparatus, the temperature inside the exposure apparatus fluctuates greatly each time the exposure operation is repeated.
• both the wafer stage and the reticle stage are driven by a motor during exposure (during transfer of a pattern), so that the rate of temperature change is large. ⁇ Not only the motor provided on the wafer stage or reticle stage, but also When a drive system of the unit (for example, a lens drive system of a projection optical system and a reticle blind drive system) is driven, a change in temperature occurs in the exposure apparatus.
• a drive system of the unit for example, a lens drive system of a projection optical system and a reticle blind drive system
• the optical characteristics of the projection optical system change (for example, a change in the best focus position and a change in aberration), so that a fine pattern is transferred due to a decrease in resolution and the like.
• This can be a problem.
• the baseline amount may fluctuate during exposure (baseline drift). For this reason, there is a problem that the overlay accuracy between the projected pattern and the shot area is reduced.
• the temperature of the atmosphere around the stage rises due to the heat generated by the stage, and the stage positioning accuracy deteriorates due to the fluctuation of the optical path of the interferometer that measures the position of the stage.
• a conventional exposure apparatus includes a temperature sensor and a temperature control device that detect the temperature inside the exposure apparatus, and the temperature control apparatus performs feedback control based on the detection result of the temperature sensor to control the temperature inside the exposure apparatus. It was kept constant.
• the temperature controller may be either an air-cooled or liquid-cooled temperature controller, but the exposure apparatus often includes a liquid-cooled temperature controller having a high cooling capacity.
• the piping for drawing the temperature-controlled refrigerant into the vicinity of a heat source such as a motor requires a large size of the exposure apparatus and a space inside the exposure apparatus. Limits the diameter. Also, since arbitrary parts cannot be used for piping, the pressure inside the piping is limited and the flow rate is also limited. Furthermore, in order to perform temperature control, it is desirable that the temperature control device is disposed as close to the heat source as possible. However, such a configuration cannot always be taken due to restrictions on the device configuration. Therefore, the dead time in the control increases due to the above-described restrictions on the device configuration.
• the present invention stabilizes the performance of the exposure apparatus by controlling the temperature inside the exposure apparatus with high accuracy even if the heat generation amount and the time constant increase, and even if there is a dead time in the control. Accordingly, it is an object of the present invention to provide an exposure apparatus and an exposure method which can improve device manufacturing efficiency as a result, and a device manufacturing method using the exposure apparatus and the exposure method. Disclosure of the invention
• An exposure apparatus includes an image forming apparatus configured to convert an image of a pattern formed on a reticle (R) held on a reticle stage (2) into a substrate (W) held on a substrate stage (5).
• a projection optical system comprising a driving source (15, 17X, 17Y, 33, 35, 72, 104b, 104d, 104e, 104f) , 104 g)
• a movable means (2, 5, 100 b, 100 d, 100 e, 100 f, 100 g) for performing a predetermined operation
• a temperature control system (61, 62) for controlling, wherein the temperature control system controls the temperature of the movable means using feedforward control.
• the temperature control system controls the temperature of the movable means using the feedforward control, and the temperature change of the movable means is quickly suppressed, it is assumed that a dead time in the control occurs.
• the temperature in the exposure apparatus can be set to a target temperature with high accuracy and precision. As a result, the performance of the exposure apparatus can be stably maintained at the expected level.
• the exposure apparatus according to the second aspect of the present invention provides an exposure apparatus, wherein an image of a pattern formed on a reticle (R) held on a reticle stage (2) is transferred to a substrate held on a substrate stage (5).
• the temperature control system (61, 62) for controlling the temperature of the controlled object, and as parameters, information on the path of the fluid, information on the flow velocity of the fluid, and information on the flow rate of the fluid
• Input means for inputting at least one piece of information
• setting means for setting the control characteristics of the temperature control system based on the information on the parameters inputted to the input means.
• the setting unit is configured to operate the temperature control system based on at least one of the information on the path of the fluid input to the input unit, the information on the flow velocity of the fluid, and the information on the flow rate of the fluid. Since the control characteristics are set, the flow path of the fluid (installation conditions when the exposure apparatus is installed, specifically, the conditions related to the fluid piping, and more specifically, information on the piping length and the piping diameter), Optimal control characteristics of the temperature control system according to the flow velocity of the fluid (one of the conditions for circulating the fluid to the controlled object) and the flow rate of the fluid (one of the conditions for circulating the fluid to the controlled object) Can be set or updated.
• the temperature inside the exposure apparatus can be set (updated) to the target temperature with high accuracy, and the performance of the exposure apparatus can be stably maintained at the expected performance.
• the control characteristics of the temperature control system can be set optimally by inputting at least one of the information on the fluid path, the information on the flow velocity of the fluid, and the information on the flow rate of the fluid from the input means. Therefore, for example, it is not necessary to repeat trial and error when installing the exposure apparatus to obtain and set the control characteristics of the temperature control system, and it is also possible to reduce the time required for installing the exposure apparatus.
• the exposure apparatus provides an exposure apparatus, comprising: an image of a pattern formed on a reticle (R) held on a reticle stage (2); By circulating the fluid to the exposure body (1 30) that projects onto the (W) through the projection optical system (PL) and the controlled object (2, 5, AL, PL) that generates temperature fluctuations, A temperature control system (61, 62) for controlling the temperature of the control object; An exposure apparatus comprising: a first setting unit (144) for setting the temperature of the fluid within a predetermined temperature range as the temperature control system; and a temperature controlled by the first temperature control system.
• Setting means (75, 78) for setting the temperature of the fluid within a temperature range smaller than the predetermined temperature range, and control means (67) for controlling at least the operation of the second setting means. 77), and the second setting means and the control means are arranged separately from the first setting means and closer to the control target than the first setting means.
• the second setting means and the control means are separated from the first setting means and arranged closer to the control target than the first setting means, it is possible to reduce the dead time in control.
• the temperature inside the exposure apparatus can be set to the target temperature with higher accuracy, and the performance of the exposure apparatus can be stably maintained at the expected performance.
• the device manufacturing method of the present invention includes a step of transferring a pattern formed on the reticle (R) onto the substrate (W) using the above exposure apparatus.
• a fine pattern is formed on the substrate. Since it is possible to faithfully transfer the image to a predetermined position, the production efficiency of the device can be improved as a result.
• the exposure method of the present invention includes projecting an image of a pattern formed on a reticle (R) held on a reticle stage (2) onto a substrate (W) held on a substrate stage (5).
• the control characteristics of the temperature control system are optimally set according to the fluid path, the fluid flow velocity, and the fluid flow rate.
• the temperature inside the exposure apparatus can be set to the target temperature with high accuracy, and the performance of the exposure apparatus can be stably maintained at the expected performance. Also, the time required for installing the exposure apparatus can be reduced.
• the exposure apparatus provides an exposure apparatus, comprising: an image of a pattern formed on a reticle (R) held on a reticle stage (2); An exposure apparatus for projecting an object through a projection optical system (PL), wherein the object is a controlled object (2, 5) that causes temperature fluctuation; and A temperature control system (62) for controlling the temperature of the substrate, input means (97) for inputting, as a parameter, information on an exposure procedure of the pattern on the reticle onto the substrate, Setting means (116, 117) for setting control characteristics of the temperature control system based on the parameters.
• PL projection optical system
• the setting means sets the temperature control system based on the information on the exposure procedure (shot map information, information on the scan procedure (scan direction) at the time of scan exposure, information on the moving speed / acceleration of the stage, etc.) Since the temperature control characteristics are set, the optimum temperature control according to the exposure procedure can be realized, the adaptability to various process programs set by the user is excellent, and the temperature is extremely accurate. Control can be realized.
• the exposure apparatus provides an image forming apparatus, comprising: a substrate (W) holding an image of a pattern formed on a reticle (R) held on a reticle stage (2); ) An exposure apparatus that projects onto a projection optical system (PL) via a drive source (15, 17X, 17Y, 33, 35, 72) for driving movable means (2, 5).
• a temperature control system (62) for controlling the temperature of the drive source by circulating a liquid to the drive source; and the drive source stopping the drive of the movable unit.
• a time measuring means (98) for measuring a period until the driving of the motor is restarted; and setting means (1 16, 1 1 7) for setting a control characteristic of the temperature control system based on a time measurement result of the time measuring means.
• the setting means sets the control characteristics of the temperature control system based on the stop period of the drive source (heat source), the optimum temperature management according to the stop period is automatically performed. Therefore, extremely high-precision temperature control for the driving source can be realized.
• the exposure apparatus provides an exposure apparatus for transferring an image of a pattern formed on a reticle (R) held on a reticle stage (2) to a substrate (W) held on a substrate stage (5).
• the optimal temperature management method (force for performing feedforward control, or other force for performing feedback control, for example) is determined at each time. Since it can be automatically determined and used as appropriate, it is possible to automatically perform optimal temperature management according to the suspension period, and to achieve extremely accurate temperature control for the drive source. Can be.
• an image of a pattern formed on a reticle (R) held on a reticle stage (2) is transferred to a substrate (W) held on a substrate stage (5).
• the temperature control is excellent in adaptability to various process programs (information on exposure procedures) set by the user and extremely high-precision. Can be realized.
• the reticle stage (2) An exposure method for projecting an image of a pattern formed on a reticle (R) held thereon onto a substrate (W) held on a substrate stage (5) via a projection optical system (PL).
• a driving source (15, 17X, 17Y, 33, 35, 72) for driving the movable means (2, 5); stopping the driving of the movable means;
• the control characteristic of a temperature control system that controls the temperature of the drive source by circulating a liquid to the drive source and the control characteristic of a temperature control system that measures the period until the driving is restarted, based on the time measurement result of the time measurement process And a setting step of setting.
• optimal temperature management according to the suspension period of the driving source can be automatically performed. Extremely accurate temperature control can be realized.
• the exposure method according to the fourth aspect of the present invention is a method for exposing a pattern image formed on a reticle (R) held on a reticle stage (2) to a substrate (W) held on a substrate stage (5).
• an optimal temperature management method feed forward control or other
• feed forward control or other can be automatically determined as appropriate and used at each time.
• FIG. 1 is a schematic diagram of an entire exposure apparatus according to a first embodiment of the present invention.
• FIG. 2 is an external perspective view of a reticle stage provided in the exposure apparatus according to the first embodiment of the present invention.
• FIG. 3 is a schematic diagram of a projection optical system provided in the exposure apparatus according to the first embodiment of the present invention.
• FIG. 4 is an external perspective view of a wafer stage ′ provided in the exposure apparatus according to the first embodiment of the present invention.
• FIG. 5 is a diagram showing a configuration of a temperature control system provided in the exposure apparatus according to the first embodiment of the present invention.
• FIG. 6 is a schematic diagram of a temperature control system provided for the reticle stage.
• FIG. 7 is a schematic diagram of a temperature control system provided for the wafer stage.
• FIG. 8 is a block diagram showing a configuration of a part of the controller 77 for controlling the temperature of the wafer stage 5.
• FIG. 9 is a diagram showing an outline of the internal configuration of the setting unit 116. As shown in FIG.
• FIG. 1 OA and FIG. 10B are diagrams schematically showing an example of a temperature change of the refrigerant circulating in the wafer stage 5, and FIG. 1 OA drives the heaters 78 by the feedforward control and the feedback control.
• FIG. 10B shows the temperature change when the heater 78 is driven only by the feedback control.
• FIG. 11 is a diagram schematically illustrating an example of the feedforward control.
• FIG. 12 shows a device (I) using the exposure apparatus and the exposure method according to the embodiment of the present invention.
• FIG. 13 is a schematic view of an exposure apparatus according to the second embodiment of the present invention.
• FIG. 14 is an external perspective view of a reticle stage provided in the exposure apparatus according to the third embodiment of the present invention.
• FIG. 15 is an external perspective view of a wafer stage provided in an exposure apparatus according to the third embodiment of the present invention.
• FIG. 16 is a sectional view of a plane orthogonal to the moving direction of the linear motor provided in the exposure apparatus according to the fourth embodiment of the present invention.
• FIG. 1 is a schematic diagram of an entire exposure apparatus according to a first embodiment of the present invention.
• the reticle R as a mask and the wafer W as a substrate are relatively moved with respect to the projection optical system PL in FIG.
• An example in which the present invention is applied to a step-and-scan type exposure apparatus that manufactures a semiconductor device by transferring the same to a semiconductor device will be described.
• the XYZ rectangular coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to the XYZ rectangular coordinate system.
• the XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the wafer W, and the Z axis is in the direction orthogonal to the wafer W (the direction along the optical axis AX of the projection optical system PL). It is set.
• the XY plane is actually set as a plane parallel to the horizontal plane, and the Z axis is set vertically upward.
• the direction (moving direction) of moving the reticle R and the wafer W during exposure (during pattern transfer) is set to the Y direction.
• the rotation directions around each axis are ⁇ ⁇ , ⁇ ⁇ , and ⁇ ⁇ .
• the exposure apparatus 1 shown in FIG. 1 is schematically composed of an illumination optical system IU, a stage device 4, a projection optical system PL, a stage device 7, and a reaction frame 8.
• the illumination optical system IU illuminates a rectangular (or arc-shaped) illumination area on the reticle R as a mask with uniform illumination by exposure illumination light from a light source (not shown).
• the stage device 4 includes a reticle stage 2 as a mask stage that moves while holding the reticle R, and a reticle surface plate 3 that supports the reticle stage 2.
• the projection optical system PL projects the pattern formed on the reticle R onto the wafer W as a substrate at a reduction ratio of 1Z (for example, 5 or 4).
• the stage device 7 is configured to include a wafer stage 5 as a substrate stage that holds and moves the ueno and W, and a wafer surface plate 6 that holds the wafer stage 5.
• Reaction Frame 8 The stage device 4 and the projection optical system PL are supported.
• the illumination optical system I u is supported by a support column 9 fixed to the upper surface of the reaction frame 8.
• the illumination light for exposure for example, far ultraviolet light (DUV light) such as ultraviolet bright line (g-line, i-line) and KrF excimer laser light (wavelength: 248 nm) emitted from an ultra-high pressure mercury lamp or a r F excimer laser beam (wavelength 1 9 3 nm)
• Wakashi Ku is the F 2 laser beam (wavelength 1 5 7 nm) vacuum ultraviolet light such as (VUV) or the like is used.
• the reaction frame 8 is placed on a base plate 10 placed horizontally on the floor, and has stepped portions 8a and 8b formed on the upper and lower sides, respectively, protruding inward. Have been.
• the reticle surface plate 3, which is a part of the stage device 4, is supported almost horizontally on the step 8a of the reaction frame 8 at each corner via the vibration isolating unit 11, and the reticle R An opening 3a through which the pattern image formed in the hole 3a is formed.
• FIG. 1 only the vibration isolating units 11 arranged in the X direction are shown, and the vibration isolating units arranged in the Y direction are not shown.
• the anti-vibration unit 11 has a configuration in which an air mount 12 whose internal pressure is adjustable and a voice coil motor 13 are arranged in series on the step 8a. These vibration isolation units 11 insulate micro vibrations transmitted to the reticle plate 3 via the base plate 10 and the reaction frame 8 at a micro G level (G is a gravitational acceleration).
• a reticle stage 2 is supported on the reticle base 3 so as to be two-dimensionally movable along the reticle base 3.
• a plurality of air bearings (air pads) 14 are fixed to the bottom surface of the reticle stage 2, and the reticle stage 2 is placed on the reticle surface plate 3 with a clearance of about several microns by the air bearings 14. Floating supported.
• FIG. 2 is an external perspective view of a reticle stage provided in the exposure apparatus according to the first embodiment of the present invention.
• the reticle stage 2 has a pair of Y linear motors (driving sources) on a reticle surface plate 3.
• a reticle coarse movement stage 16 driven by a predetermined stroke in the Y-axis direction by means of 5 and 15 and a pair of X voice coil motors (drive sources) 17 X and a pair of ⁇
• a reticle fine movement stage 18 that is minutely driven in the X, ⁇ , and ⁇ directions by a voice coil motor (drive source) 17 ⁇ is provided.
• reticle stage 2 is shown in a simplified manner in FIG. 1, which is composed of reticle coarse movement stage 16 and reticle fine movement stage 18.
• the linear motors 15, 15, the reticle coarse movement stage 16, and the reticle stage 2 driven by the X voice coil motor 17 X and the ⁇ voice coil motor 17 ⁇ as the driving sources are movable according to the present invention. It corresponds to a part of a means or a control target.
• Each linear motor 15 is levitated and supported by a plurality of air bearings (air pads) 19, which are non-contact bearings, on the reticle platen 3.
• stator 20 extending in the axial direction and the stator 20 And a mover 21 fixed to a reticle coarse movement stage 16 via a connecting member 22. For this reason, according to the law of conservation of the movement amount, the stator 20 moves in one direction as a counter mass in accordance with the movement of the reticle coarse movement stage 16 in the + ⁇ direction.
• the movement of the stator 20 cancels the reaction force caused by the movement of the reticle coarse movement stage 16 and can prevent the position of the center of gravity from changing. ⁇ Because the mover 21 and the stator 20 in the linear motor 15 are force-coupled, when they move relatively, a force acts to stop at the original position. Therefore, in the present embodiment, a trim motor 72 (drive source; not shown in FIG. 2; see FIG. 6) for correcting the amount of movement of stator 20 to reach a predetermined position is provided. ing.
• the reticle coarse movement stage 16 is fixed to the upper surface of the upper protruding portion 3b formed at the center of the reticle base 3, and is guided in the Y-axis direction by a pair of guides 51, 51 extending in the axial direction. Is done. Further, reticle coarse movement stage 16 is supported in a non-contact manner by air bearing (not shown) with respect to Y guides 51 and 51.
• the reticle R is suction-held on the reticle fine movement stage 18 via a vacuum chuck (not shown).
• a pair of Y movable mirrors 52 a, 52 b composed of corner cubes are fixed to one end of the reticle fine movement stage 18 in the Y direction. Consists of a plane mirror extending in the Y-axis direction X movable mirror 53 is fixed.
• the three laser interferometers (all not shown) that irradiate a length measuring beam to these Y movable mirrors 52a, 52b and X movable mirror 53 measure the distance to each movable mirror, and the reticle The position of the stage 2 in the X and Y directions and the rotation around the Z axis ⁇ Z are measured with high accuracy.
• the projection optical system PL includes a plurality of refractive optical elements (lens elements). Both the object plane (reticle R) side and the image plane (wafer W) side are telecentric and circular. It has a projection field of view.
• the glass material of the plurality of refractive optical elements included in the projection optical system PL for example, quartz or fluorite is selected according to the wavelength of the illumination light for exposure.
• Illumination optical system When the illumination light emitted from the IU illuminates the reticle R, the illumination light transmitted through the reticle R enters the projection optical system PL, and a partial inverted image of the pattern formed on the reticle is an image of the projection optical system PL.
• An image is formed at the center of the circular field of view on the surface side, limited to a slit shape. Thereby, the partial inverted image of the projected pattern is reduced and transferred to the resist layer on the surface of one of the plurality of shot areas on the wafer W arranged on the image plane of the projection optical system PL. .
• FIG. 3 is a schematic diagram of a projection optical system provided in the exposure apparatus according to the first embodiment of the present invention.
• the projection optical system PL is provided with a plurality of divided lens barrels 100a to 1001 that are arranged in the direction of the optical axis AX, and the mirror shown in FIG. It is supported on the cylinder platen 25.
• the lens element 10 lb which is supported by the split barrels 100 b, 100 d, 100 e, 100 f, and 100 g among the plurality of split barrels 100 a to 1001.
• 101 d, 101 e, 101 f, and 101 g are movable lens elements that can move in the optical axis AX direction (Z direction) and can tilt (tilt) around the X or Y direction. .
• the split lens barrel 100 b Regarding the configuration of the split lens barrel 100 b, 100 d, 100 e, 100 f, 100 g holding the lens elements 101 b, 101 d, 101 e, 101 f, 101 g, the split mirror
• the configuration of the cylinder 100b will be described as a representative.
• the configuration of the other divided lens barrels 100d, 100e, 100f, and 100g is almost the same as the configuration of the divided lens barrel 100b, and thus the description is omitted here.
• the split barrel 100 b is a split barrel located above and below (in the Z direction) the split barrel 100 b
• An outer ring 102b connected to 100a, 100c is provided, and a lens chamber 103b holding 10 lb of lens element.
• the lens chamber 103b is movable with respect to the outer ring 102b in the optical axis AX direction (Z direction) and tiltable around an axis parallel to the X axis or an axis parallel to the Y axis. It is connected to the outer ring 102b.
• the split lens barrel 100b includes an actuator (drive source) 104b attached to the outer ring 102b.
• the actuator 104b for example, a piezoelectric element can be used.
• the actuator 104b drives the lens chamber 103b via a link mechanism as a displacement magnifying mechanism composed of, for example, an elastic hinge.
• the actuator 104b is mounted at three locations of the split lens barrel 100b at an azimuth of 120 ° in the XY plane, so that three locations of the lens chamber 38 are independently controlled in the optical axis AX direction (Z direction). Move to).
• the lens chamber 103b will translate in the Z direction (optical axis AX direction) with respect to the outer ring 102b, If the driving amounts in the Z direction by the three actuators 104b are different amounts, the lens chamber 103b is tilted with respect to the outer ring 102b around an axis parallel to the X axis or an axis parallel to the Y axis. Becomes If the driving amounts in the Z direction by the three actuators 104b are different amounts, the lens chamber 103b may move in the Z direction (the optical axis AX direction) with respect to the outer ring 102.
• the split lens barrel 100b is attached to the outer ring 102b and includes a drive amount measuring unit 105b composed of, for example, an optical encoder.
• the driving amount measuring section 105b is attached to the outer ring 102b at an azimuth of 120 ° in the XY plane, and the Z direction (optical axis) of the lens chamber 103b with respect to the outer ring 102b at each position. AX direction).
• the three driving amount measuring units 105b are arranged at positions where each of the three actuators 104b is rotated around the center of the divided lens barrel 100b by 60 ° in the XY plane.
• the movement of the lens chamber 103b and, consequently, the movement of the lens element 101b can be controlled in a closed loop. It is a configuration that can be done.
• 100 b, 100 d, 100 e, 100 f, 100 g is a movable lens barrel according to the present invention. It corresponds to a part of the means. Further, among the divided barrels 100a to 1001 shown in FIG.
• the lens elements supported by 1 101 a, 101 c, 101 h, 101 i, 101 j, 101 k, and 101 are fixed lenses.
• the split lens barrel 100c includes an outer ring 102c connected to split lens barrels 100b and 100d located above and below (in the Z direction) the split lens barrel 100c, and an outer ring 102c. It comprises a lens chamber 103c attached to 102c and holding a lens element 101c.
• a piezoelectric element is used as the actuator 104b will be described as an example.
• a magnetostrictive actuator / a fluid pressure actuator may be used.
• the lens elements 101a to 1011 may be constituted by a single lens element, or may be constituted by a lens group obtained by combining a plurality of lens elements.
• the attitude of the lens elements 101b, 101d, 101e, 101f, and 101g can be changed without changing the axis (position in the AX direction and inclination with respect to the XY plane).
• a lens controller (not shown) controls the driving amount of the actuators 104b, 104d, 104e, 104f, and 104g to determine the posture of one of these lens elements.
• the five rotationally symmetric aberrations referred to here include magnification, distortion (distortion), coma, field curvature, and spherical aberration.
• the five eccentric aberrations include eccentric distortion, eccentric coma, eccentric ass aberration, and eccentric spherical aberration.
• the projection optical system PL is provided with an optical base plate 25 composed of an object or the like that is supported substantially horizontally on the step 8 b of the reaction frame 8 via the vibration isolating unit 24,
• the shaft AX is inserted from above with the Z direction as the Z direction, and the flanges 23 are engaged.
• the anti-vibration unit 24 is arranged at each corner of the lens barrel base 25, and the internal pressure is reduced.
• An adjustable air mount 26 and a voice coil motor 27 are arranged in series on the step 8b.
• FIG. 1 only the vibration isolator 24 arranged in the X direction is illustrated, and the vibration isolator arranged in the Y direction is omitted.
• These vibration isolation units 24 insulate, at the micro G level, minute vibrations transmitted to the lens barrel base 25 (and, consequently, the projection optical system PL) via the base plate 10 and the reaction frame 8.
• the stage device 7 includes a wafer stage 5, a wafer surface plate 6 that supports the wafer stage 5 so as to be movable in a two-dimensional direction along the XY plane, and a sample stage that is provided integrally with the wafer stage 5 and that holds the wafer W by suction.
• the ST mainly comprises an X guide bar XG which supports the wafer stage 5 and the sample stand ST so as to be relatively movable.
• a plurality of air bearings (air pads) 28, which are non-contact bearings, are fixed to the bottom surface of the wafer stage 5, and these air bearings 28 move the wafer stage 5 onto the wafer surface plate 6, for example, several times. It is levitated and supported through a clearance on the order of microns.
• the wafer surface plate 6 is supported almost horizontally above the base plate 10 via a vibration isolation unit 29.
• the anti-vibration unit 29 is arranged at each corner of the wafer surface plate 6, and the air mount 30 whose internal pressure can be adjusted and the voice coil motor 31 are arranged in parallel on the base plate 10 It has become.
• FIG. 1 only the vibration isolating unit 29 arranged in the X direction is shown, and the vibration isolating unit arranged in the Y direction is not shown.
• These vibration isolation units 29 insulate the minute vibration transmitted to the wafer surface plate 6 via the base plate 10 at the microphone opening G level.
• FIG. 4 is an external perspective view of a wafer stage provided in the exposure device according to the first embodiment of the present invention.
• the X guide bar XG has a long shape along the X direction, and movers 36, 36 each composed of an armature unit are provided at both ends in the length direction. ing.
• the stators 37, 37 having magnet units corresponding to these movers 36, 36 are provided on support portions 32, 32 projecting from the base plate 10 (see FIG. See Fig. 1.
• the mover 36 and the stator 37 are shown schematically in Fig. 1).
• a linear motor (drive source) 33, 33 is constituted by the mover 36 and the stator 37, and the mover 36 is driven by electromagnetic interaction with the stator 37.
• the X guide bar XG moves in the Y direction, and the linear motors 33, 33 rotate to move in the 0 Z direction by adjusting the drive. That is, the wafer stage 5 (and the sample stage ST, hereinafter simply referred to as the sample stage ST) is driven in the Y direction and the Z direction substantially integrally with the X guide bar XG by the linear motor 33.
• a mover of the X trim motor 34 is attached to one X direction side of the X guide bar XG.
• the X trim motor 34 adjusts the position of the X guide bar XG in the X direction by generating a thrust in the X direction, and its stator (not shown) is provided on the reaction frame 8. . Therefore, a reaction force when driving the wafer stage 5 in the X direction is transmitted to the base plate 10 via the reaction frame 8.
• the sample stage ST is in non-contact with the X guide bar XG via a magnetic guide consisting of a magnet and an actuator that maintains a predetermined gap in the ⁇ ⁇ ⁇ direction between the X guide bar XG and the X guide bar XG so as to be relatively movable in the X direction. Supported by ⁇ Retained.
• the wafer stage 5 is driven in the X direction by electromagnetic interaction of an X linear motor (drive source) 35 having a stator embedded in an X guide bar XG.
• the mover of the X linear motor is not shown, but is attached to wafer stage 5.
• a wafer W is fixed to the upper surface of the sample stage ST via a wafer holder 41 by vacuum suction or the like (see FIG. 1; not shown in FIG. 4).
• the wafer stage 5 driven by the linear motors 33, 33 as drive sources and the X linear motor 35 corresponds to a part of the movable means or the control means according to the present invention.
• the X-replacement motor 25 is arranged closer to the wafer W mounted on the wafer stage 5 than the linear motor 33 as a drive source. For this reason, it is preferable to use a moving coil type linear motor that generates a small amount of heat as the X-replacement motor 35.
• the linear motor 33 it is desirable to use a moving coil type linear motor in the same manner as the X linear motor 35 from the viewpoint of heat generation.
• the moving coil type linear motor needs to circulate the refrigerant through the mover 36, if there is a problem in the device configuration, the magnet is attached to the mover 36 side.
• a moving magnet type linear motor provided with the above may be used.
• the position of the wafer stage 5 in the X direction is based on the reference mirror 4 2 (see FIG. 1) fixed to the lower end of the barrel of the projection optical system PL, and the moving mirror 4 3 fixed to a part of the wafer stage 5
• the laser interferometer 44 shown in FIG. 1 measures the positional change of the laser beam at a predetermined resolution, for example, about 0.5 to 1 nm in real time.
• the position of the wafer stage 5 in the Y direction is measured by a reference mirror, a laser interferometer, and a movable mirror (not shown) arranged substantially orthogonal to the above-mentioned reference mirror 42, movable mirror 43, and laser interferometer 44. Is done.
• At least one of these laser interferometers is a multi-axis interferometer having two or more measuring axes. Based on the measured values of these laser interferometers, the wafer stage 5 (and thus the wafer W) is moved in the X direction. Not only the position and the position in the Y direction, but also the rotation amount and the leveling amount can be obtained.
• three laser interferometers 45 are fixed at three different places on the flange 23 of the projection optical system PL (however, in FIG. 1, these laser interferometers are not shown). One of them is shown). Openings 25a are respectively formed in portions of the lens barrel base 25 facing each of the laser interferometers 45, and each of the laser interferometers 45 through Z is formed through these openings 25a.
• the laser beam (length measuring beam) in the direction is irradiated toward the wafer surface plate 6.
• a reflection surface is formed on the upper surface of the wafer surface plate 6 at a position facing each measurement beam. Therefore, three different Z positions of the base plate 6 are measured by the three laser interferometers 45 with reference to the flange 23.
• FIG. 5 is a diagram showing a configuration of a temperature control system provided in the exposure apparatus according to the first embodiment of the present invention.
• the temperature control system shown in Fig. 5 consists of a first control system 61 that controls and manages the temperature of the projection optical system PL and the alignment system AL using a coolant, a reticle stage 2 and a wafer stage that uses a coolant.
• the control target 5 is roughly divided into a second control system 62 for controlling and managing the temperature independently of the first control system 61.
• the first control system 61 and the second control system 62 are arranged in separate casings (not shown).
• the projection optical system PL and the alignment system AL in which the heat generation amount or the temperature change amount is within the predetermined amount, and the heat generation amount or the temperature change amount is larger than the predetermined amount.
• the reticle stage 2 and the wafer stage 5 are individually controlled.
• HFE Hydro Fluoro Ether Fluorinert
• the global warming potential is low and the ozone depletion potential is zero. HFE is used.
• the refrigerant in the tank 63 whose temperature has been adjusted in the first control system 61 passes through a pump 64, a circulation system C1 that sequentially circulates through an alignment system AL and a projection optical system PL, and an evaporator 65. It is branched into a cooling system C2 to be cooled.
• the temperature of the refrigerant immediately after being discharged from the pump 64 is detected by the temperature sensor 66 and output to the controller 67.
• the projection optical system PL has a wide temperature control range by the refrigerant by being helically piped around the lens barrel 68. In the present embodiment, in FIG.
• the force S is configured so that the refrigerant is helically circulated around the lens barrel 68 from top to bottom. It is good to configure, Further, in the circulation system C1, a temperature sensor 69 for detecting the refrigerant temperature before circulating in the projection optical system PL is provided, and the detection result is output to the controller 67.
• the temperature sensor 66 and the temperature sensor 69 correspond to a part of the detection unit according to the present invention.
• the temperature of the projection optical system PL is controlled by spirally piping around the lens barrel 68 over almost the entire surface.
• the present invention is not limited to this.
• the temperature may be controlled by piping the part (flange 23) holding the system PL (flange temperature control method).
• an LSA (Laser Step Alignment) type, FIA (Field Image Alignment) type, or LIA (Laser Interferometric Alignment) type alignment sensor can be used.
• the LSA method irradiates laser light such as He-Ne onto a dot array of alignment marks on the wafer W and detects the mark position using light diffracted or scattered by the mark. It is.
• the FIA method is a method of illuminating with light having a wide wavelength bandwidth using a halogen lamp or the like as a light source, and processing image data of an alignment mark captured by a CCD camera or the like to measure a mark position.
• the LIA method irradiates two coherent beams (semiconductor lasers, etc.) inclined in the pitch direction onto an alignment mark in the form of a diffraction grating on the wafer W, and generates two beams.
• the folded light interferes and the position of the alignment mark is measured from its phase.
• the alignment sensor for example, a method as disclosed in WO98 / 369699, that is, an alignment detection light (such as He—Ne or a YAG laser light) is applied to an alignment mark on a wafer. It is also possible to use a method that irradiates) vertically and detects diffracted light of the same order generated from the mark. In the present embodiment, it is assumed that the above FIA alignment sensor is used.
• the coolant is circulated to the alignment light source in the alignment system AL to control the temperature.
• the circulation system for example, similarly to the projection optical system PL, it is possible to spirally pipe a housing for housing the light source.
• the temperature may be adjusted by circulating the refrigerant not only in the alignment light source but also in the housing that houses the alignment optical system.
• the TTR (Through The Reticle) method and the TTL (Through The Lens) method that detect marks on the wafer W via the projection optical system PL instead of the offaxis system
• the alignment light source and the housing are similarly
• the temperature can be adjusted by circulating the refrigerant.
• the refrigerant that has circulated through the alignment system A L and the projection optical system P L in the circulation system C 1 returns to the upper chamber of the tank 63 which is divided into two upper and lower sections.
• the alignment sensors of the TTR system and the TTL system measure the position of an alignment mark formed on the wafer W via the projection optical system PL, so that the projection optical system PL is located on the object plane (reticle) side of the projection optical system PL. It is configured to be able to move forward and backward with respect to the opening. Therefore, when these alignment sensors are provided, the motor for moving the alignment forward and backward corresponds to the drive source according to the present invention, and the alignment sensor corresponds to the movable means.
• the refrigerant in the cooling system C2 is branched into a path C3, which is cooled by the evaporator 65 and returns to the upper chamber of the tank 63, and a path C4 toward the heat exchanger 70.
• the evaporator 65 is cooled by a refrigerator 73 that circulates a gaseous refrigerant.
• the cooled refrigerant is used for heat exchange in the heat exchanger 70 in the route C4, and then returns to the upper chamber of the tank 63 and is cooled again.
• a heater controlled by the controller 6 7 7 1 power S Has been established.
• the controller 67 controls the driving of the heater 71 based on the detection results of the temperature sensors 66 and 69, thereby controlling the temperature of the alignment system AL and the projection optical system PL via the refrigerant, for example, at 23 ° C. ⁇ Control (manage) to 0.01 ° C.
• the controller 67 forms part of the temperature control system according to the present invention, and controls the temperatures of the alignment system AL and the projection optical system PL by performing feedforward control and feedback control.
• the refrigerant cooled by the heat exchanger 70 branches into a circulation system C 5 circulating through the reticle stage 2 after passing through the pump 74 and a circulation system C 6 circulating through the wafer stage 5. Is done.
• the refrigerant in the second control system 62 is configured to circulate in a closed system without returning to the tank 63.
• a heater 75 is provided at a position downstream of the pump 74, and the refrigerant temperature before circulating through the reticle stage 2 and the temperature at which the refrigerant temperature after circulating through the reticle stage 2 are detected.
• the controller 77 performs a simple average or a weighted average of the detection results output from the temperature sensors 76a and 76b, and performs feedback control of the heater 75 based on the obtained refrigerant temperature, thereby controlling the temperature of the reticle stage 2 to, for example, Control (manage) to 23 ° C ⁇ 0.1 ° C.
• the refrigerant cooled by the heat exchanger 70 is configured to be circulated to the pump 74.However, when the pressure loss of the heat exchanger 70 is large, the pump 74 is disposed upstream of the heat exchanger 70. Then, it may be configured so that the merging point of the return refrigerants (the refrigerants after cooling the respective stages) of the circulation systems C5 and C6 is located upstream of the pump 74.
• FIG. 6 is a schematic diagram of a temperature control system provided for the reticle stage.
• the circulating system C5 circulates through the movers 21 and 21 of the Y linear motor 15 and circulates through the circulating systems C7 and C7 for controlling the temperature and the trim motors 72 and 72, respectively.
• each of the circulation systems C7 to C10 the flow rate of the refrigerant is adjusted by being located upstream of each motor. Valves 80 are provided respectively.
• one of the circulation systems C7 is provided near the mover 21 and detects the temperature of the refrigerant before circulating through the mover 21.
• the above-described temperature sensor 76b for detecting the temperature of the refrigerant after the cooling is provided.
• These temperature sensors 76a and 76b form a part of the detection section according to the present invention.
• the temperature sensors 76a and 76b are typically provided for only one mover 21 (the mover 21 on the right side in FIG. 6). Not limited to this, temperature sensors may be provided for all drive sources to be temperature controlled.
• the circulation system C 6 is provided with a heater 78 at a position downstream of the pump 74, and has a refrigerant temperature before circulating through the wafer stage 5 and a refrigerant after circulating through the wafer stage 5.
• Temperature sensors 79a and 79b for detecting temperatures are provided, and the detection results of the temperature sensors 79a and 79b are output to the controller 77.
• the temperature sensors 79a and 79b form part of the detection unit according to the present invention.
• the controller 77 averages or weights the detection results output from the temperature sensors 79 a and 79 b, and performs feedback control of the heater 78 based on the obtained refrigerant temperature, thereby controlling the wafer stage 5.
• the temperature is controlled (managed) at, for example, 23 ° C. ⁇ 0.1 ° C.
• the refrigerant circulated through the reticle stage 2 by the circulation system C5 and the refrigerant circulated through the wafer stage 5 by the circulation system C6 join after being cooled by the heat exchanger 70, respectively.
• FIG. 7 is a schematic diagram of a temperature control system provided for the wafer stage.
• the circulating system C 6 is composed of a circulating system C 11, C 11, which circulates the movers 36, 36 of the linear motor 33 to control the temperature, and an X linear motor 35.
• a circulation system C 12 for temperature control is provided with a valve 84 which is located upstream of each motor and adjusts the flow rate of the refrigerant.
• one of the circulating systems CI 1 has the above-described temperature sensor 79 a for detecting the refrigerant temperature before circulating through the mover 36 and the refrigerant temperature after circulating through the mover 36. , 79 b.
• the temperature sensor provided on the wafer stage 5 side as in the case of the reticle stage, all the drives to be temperature controlled are A temperature sensor may be arranged for each of the sources.
• Circulation system C 13 C 15 is also piped to three voice coil motors 8 18 3 for performing leveling adjustment (and focus adjustment) of wafer stage 5 (sample stage ST). I have.
• Each circulation system C 13 C 15 is provided with a valve 85 that is located upstream of the voice coil motor and regulates the flow rate of the refrigerant.
• the driving frequency of the voice coil motor 8 18 These circulation systems C 13 C 15 branch off from the circulation system C 1 of the first control system 61 because the heat generation amount or the temperature change amount during driving is small compared to 3, 35. The temperature is controlled by the cooled refrigerant.
• the main control system 95 sends a control signal to each unit provided inside the exposure apparatus 1 based on the contents of the exposure data file stored in a storage device 96 such as a disk drive. (Control command) to control the operation of the entire exposure apparatus 1.
• the exposure data file contains information on the number of shots set on the wafer w and the reticle R to be used, as well as the processing required to expose the wafer W (illumination distribution adjustment processing, alignment processing, projection optical system The processing for adjusting the optical characteristics of the PL, the temperature control processing, etc.) and the processing order (so-called recipe) are stored.
• an alignment control signal (first control) is performed based on the contents of the exposure data file described above.
• Command to a stage controller (not shown) and an alignment system AL to adjust the positions of the reticle stage 2 and the wafer stage 5, and to align the alignment mark formed on the reticle R and the alignment mark formed on the wafer W. Alignment is measured by the AL system.
• an exposure control signal (second control command) is sent to a stage controller (not shown) and the illumination optical system IU based on the contents of the exposure data file.
• the reticle stage 2 and the machining stage 5 are accelerated, and when each of them reaches a preset speed, the illumination light is emitted from the illumination optics system IU.
• the reticle stage 2 and the wafer stage 5 are driven while being illuminated.
• an unexpected situation (abnormal May occur, and it may not be possible to proceed with the processing in the order defined in the exposure data file.
• an unexpected situation (abnormal May occur, and it may not be possible to proceed with the processing in the order defined in the exposure data file.
• the main control system 95 outputs a return control signal (third control command) to each part of the exposure apparatus 1 to perform processing for returning from the abnormal state to the normal state.
• this return process for example, a process of moving the reticle stage 2 and the wafer stage 5 to a predetermined origin and stopping emission of the illumination light when the illumination light is emitted from the illumination optical system IU is performed. .
• the control signal CS 1 (including the above-described alignment control signal, exposure control signal, and return control signal) output from the main control system 95 is output to the controllers 67 and 77.
• the controllers 67 and 77 perform feedforward control in response to the control signal CS1 from the main control system 95 to control the projection optical system PL and the alignment system AL, as well as the reticle stage 2 and wafer stage 5. This is for controlling the temperature.
• the temperature of the refrigerant circulating in the alignment system AL and the projection optical system PL is set by the heater 71 provided in the tank 63
• the temperatures of the respective coolants circulating through the reticle stage 2 and the wafer stage 5 are set by heaters 75 and 78.
• the dead time for example, by using the heaters 75, 788 finally. It is better that the time required for the temperature-controlled refrigerant to reach the control target such as the motor through the pipe (flow path) and actually control the temperature) is as short as possible.
• the heater 71 is arranged near the alignment system AL and the projection optical system PL to be controlled, and the heaters 75, 788 are controlled to the reticle stage 2 and the wafer stage 5, respectively. It is difficult to place them in close proximity, and some amount of time is wasted.
• the controllers 67 and 77 set the temperatures of the respective refrigerants by feedforward control based on the control signal CS1 output from the main control system 95, so that the temperature due to the dead time is increased. Deterioration of accuracy of degree control is prevented.
• each temperature sensor is installed inside the flow path (piping) so that the refrigerant temperature can be directly measured.
• the detection section of the temperature sensor is separated from the wall surface of the pipe. It is also possible to adopt a configuration in which it is arranged at a position (that is, a position where it is suspended near the center in the pipe). With such an arrangement, there is obtained an advantage that it is less likely to be adversely affected by the external environment via the pipe wall surface.
• the temperature sensor may be configured to be replaceable. In this configuration, an insertion port is provided in the pipe, and the temperature sensor is fixed to the pipe by welding or the like, or a part of the pipe including the temperature sensor is fixed to the pipe by welding or the like. A replaceable configuration can be adopted. Furthermore, it is also possible to adopt a configuration in which a temperature sensor is installed on the outer surface of the pipe and the refrigerant temperature is measured through the pipe.
• FIG. 8 is a block diagram showing a configuration of a part for controlling the temperature of wafer stage 5 of controller 77.
• the portion for controlling the temperature of reticle stage 2 has the same configuration, and therefore is not shown in FIG.
• the configuration of the controller 67 is the same as the configuration of the controller 77 shown in FIG.
• the heater 78, the temperature sensor 79a, and the temperature sensor 79b are replaced with the heater 75, the temperature sensor 76a, and the temperature sensor 76b, respectively. Accordingly, the configuration of a portion for controlling the temperature of reticle stage 2 of controller 77 can be described.
• the controller 77, the heater 78, the temperature sensor 79a, and the temperature sensor 79b are replaced with the heater 71, the temperature sensor 66, and the temperature sensor 69, respectively.
• the controller 77, the heater 78, the temperature sensor 79a, and the temperature sensor 79b are replaced with the heater 71, the temperature sensor 66, and the temperature sensor 69, respectively.
• FIG. 8 illustration of the wafer stage 5 is omitted.
• the controller that controls the temperature of the wafer stage 5 of the controller 77 includes a target temperature output unit 110, a calculation unit 111, and a PID (Proportional Integral Derivative) controller 11 2.
• the target temperature output section 110 outputs a target temperature signal that gives a target temperature (for example, 23 ° C.) of the wafer stage 5.
• the operation unit 51 outputs a deviation signal SG2 according to a difference between the target temperature signal SG1 output from the target temperature output unit 110 and the feedback signal SG6 output from the operation unit 115. .
• the PID controller 112 outputs a control signal SG3 for controlling the heating amount of the heater 78 based on the input deviation signal SG2.
• the FF controller 113 outputs a control signal SG 4 for controlling the heating amount of the heater 78 based on the control signal CS 1 output from the main control system 95, and outputs the refrigerant in the circulation system C 5
• the feed temperature of the wafer stage 5 and, consequently, the temperature of the wafer stage 5 are controlled.
• the main control system 95 When the main control system 95 performs a relative alignment process between the reticle R and the wafer W, a process of transferring the pattern of the reticle R to the wafer W by scanning the reticle stage 2 and the wafer stage 5 is performed.
• the magnitudes of the number of times of acceleration / deceleration (the number of times of driving) and the amount of acceleration (the amount of driving) per unit time of the wafer stage 5 when performing the return process are different from each other.
• the FF controller 113 calculated the number of times of acceleration / deceleration per unit time and the magnitude of acceleration from the control signal SC 1 output from the main control system 95, and varied the control amount for each process. Outputs control signal SG4.
• Feed forward control using FF controller 1 1 3 is highly accurate This is to control (manage) the temperature of the wafer stage 5 to, for example, 23 ° C. ⁇ 0.1 ° C.
• the adder 114 adds the control signal SG3 output from the PID controller and the control signal SG4 output from the FF controller 113, and outputs the result to the heater 78 as a control signal SG5.
• Arithmetic operation section 115 performs predetermined arithmetic processing (for example, averaging processing) on the detection results of temperature sensors 79a and 79b, and outputs the result as feedback signal SG6.
• the controller 77 controls the temperature of the wafer stage 5 using both the feedback control and the feedforward control.
• the setting units 1 16 and 1 17 are for setting the control amount in the FF controller 113 and the control amount in the PID controller 112 respectively.
• the controller 77 is provided with the FF controller 113 to actively perform the feedforward control. is a translation, the heater 7 8 pipe length up to the force control from the target serving wafer stage 5 is Rukoto force s will change depending on the installation environment exposure apparatus 1 shown in FIG.
• the appropriate control amount changes according to the pipe length.
• the optimal control amount also changes according to the flow rate and flow rate of the refrigerant flowing in the piping. This is the same for the control amount of the PID controller 113. It is possible to set the above-mentioned control amount by trial and error with the refrigerant flowing, while actually operating the exposure apparatus 1 after the piping is completed when installing the exposure apparatus 1. It takes time and time to find the optimal control amount. For this reason, in this embodiment, the setting units 1 16 and 1 17 can be configured simply by inputting the pipe length and the pipe diameter from the heater 78 to the wafer stage 5 and the flow rate and flow rate of the refrigerant flowing in the pipe.
• an input device 97 corresponds to an input means according to the present invention, and is constituted by, for example, an operation panel or a keyboard.
• Information about the pipe length to the wafer stage 5 (the path length of the fluid from the location where the temperature is finally controlled to the control target) and the flow rate and flow rate of the refrigerant flowing through the pipe are input.
• FIG. 9 is a diagram showing an outline of the internal configuration of the setting unit 116.
• the setting unit 116 includes a storage unit 120 and a calculation unit 121.
• the storage unit 120 sets the pipe length and the pipe diameter to a predetermined length (reference pipe length) and a predetermined diameter (reference pipe diameter), and sets the flow rate and the flow rate of the refrigerant to a predetermined value (reference flow rate). And the reference flow rate) and the reference control amount (reference control characteristics) of the FF controller 113.
• the calculation unit 122 is based on the reference control amount stored in the storage unit 120 and the information such as the pipe length input from the input device 97, so that the optimum value to be set in the FF controller 113 is determined. Calculate the appropriate control amount (control characteristic).
• the optimal control amount calculated by the calculation unit 121 includes the timing for controlling the temperature of the refrigerant circulating in the circulation system C5 and the absolute value (control constant) of the control amount.
• the calculation section provided in the setting section 117 controls the control timing for PID control and the optimal value of each control constant of P (proportional) control, I (integral) control, and D (differential) control. Is calculated.
• the calculation unit 1221 calculates the optimal feedforward control timing by linearly interpolating the reference control amount according to the input pipe length. I do.
• the linear interpolation Alternatively, approximation by the method of least squares, or more complicated arbitrary approximation or interpolation may be used.
• the setting unit 116 sets the control amount (control characteristic) calculated by the calculation unit 121 to the FF controller 113.
• control amount of the feedforward control and the control amount of the PID control are configured to be calculated by using the reference control amount as described above, but each control amount and a plurality of setting conditions (piping Length or flow rate, and flow velocity), a table is obtained by subdividing the setting conditions and obtaining and storing them in advance through simulations, experiments, etc., and optimally matching the conditions set based on the tables.
• a control amount may be selected or an interpolation operation may be performed.
• the main control system 95 reads out data related to exposure from the exposure data file stored in the storage device 96 shown in FIG. 5, and exposes the data to a stage controller (not shown) and the illumination optical system IU. This is started by outputting the light control signal (second control command).
• a stage controller (not shown) accelerates the reticle stage 2 and the wafer stage 5, and when the reticle stage 2 and the wafer stage 5 reach a predetermined speed, the illumination optical system IU emits illumination light. The light is emitted to illuminate a predetermined rectangular illumination area on the reticle R with uniform illuminance.
• the wafer W is scanned with respect to an exposure area optically conjugate with respect to this illumination area and the projection optical system PL.
• the illumination light transmitted through the pattern region of the reticle R is reduced by a factor of 1Z by the projection optical system PL, and a reduced image of the pattern is projected on the wafer W coated with the resist.
• the pattern of the reticle R is sequentially transferred to the exposure area on the wafer W, and the entire pattern area on the reticle R is transferred to the shot area on the wafer W by one scan.
• stator 20 By moving in the Y direction, the momentum is preserved, the reaction force accompanying the movement of the reticle coarse movement stage 16 can be offset, and the change in the position of the center of gravity can be prevented.
• the stator 20 can reach a predetermined position against the coupling between the mover 21 and the stator 20.
• the illumination light generates heat in the projection optical system PL (heat absorption in the projection optical system PL), and the alignment light generates heat in the alignment system AL (in the optical system of the alignment AL).
• heat is generated from each motor as the reticle stage 2 and wafer stage 5 are driven.
• the controller 67 performs feedforward control based on the control signal SC1 output from the main control system 95, and performs feedback control based on the detection results of the temperature sensors 66 and 69 to control the heater. 7
• the temperature of the projection optical system PL and the alignment system AL is controlled within the range of ⁇ 0.01 ° C.
• the controller 77 performs feedforward control based on the exposure control signal and performs feedback control based on the detection results of the temperature sensors 76a, 76b, 79a, and 79b.
• the controller 77 controls the driving of the heaters 75 and 78, the reticle stage 2 and the wafer stage 5 are each temperature-controlled within a range of ⁇ 0.1 ° C.
• controller 77 simply averages the refrigerant temperatures detected by temperature sensors 76a and 76b, and adjusts and manages driving of heater 75 based on the obtained refrigerant temperature. Similarly, for the wafer stage 5, the controller 77 simply averages the coolant temperatures detected by the temperature sensors 79a and 79b, and adjusts and manages the driving of the heater 78 based on the obtained coolant temperature.
• the refrigerant temperature adjusted and managed by the controller 77 will be described.
• 10A and 10B are diagrams schematically showing an example of a temperature change of the refrigerant circulating in the wafer stage 5, and FIG. 10A shows the heater 78 by the feed-forward control and the feedback control. FIG. 10B shows a temperature change when the heater 78 is driven only by the feedback control.
• curves denoted by reference numerals D11 and D21 indicate detection results of the temperature sensor 79b for detecting the temperature of the refrigerant after circulating through the wafer stage 5.
• the curves denoted by D12 and D22 show the detection results of the temperature sensor 79a that detects the temperature of the refrigerant before circulating through the wafer stage 5.
• curves denoted by reference signs D10 and D20 indicate values obtained by averaging the detection result of the temperature sensor 79a and the detection result of the temperature sensor 79b. Time t1 in FIGS.
• time t1 to time t2 is a time interval required for exposing one lot (a predetermined number of sheets, for example, 25 pieces of one lot) of wafers W, for example.
• the wafer stage 5 is driven from time t′l when the motor is driven until time t 11.
• the detection result D21 of the temperature sensor 79b that detects the temperature of the refrigerant after circulating the refrigerant has started to rise
• the temperature D22 of the temperature sensor 79a hardly changes. This is because even if the controller 77 drives the heater 78 by feedback control based on the detection result of the temperature sensor 79b, it takes time for the refrigerant to reach the wafer stage 5 from the heater 78 in FIG. This is because a so-called dead time in control occurs.
• the average value D20 of the detection result of the temperature sensor 79a and the detection result of the temperature sensor 79b continues to increase, and the time t11 elapses. Only then can the descent begin. For this reason, the average value D 20 greatly deviates from the target temperature (23 ° C. in the example shown in FIG. 10), which is not preferable for temperature control. This situation also occurs around time t2 when the operation of the motor is stopped. When the operation of the motor is stopped, the refrigerant before circulating through the wafer stage 5 remains low despite the decrease in the heat value of the motor. Lower than the required temperature.
• FIG. 11 is a diagram schematically illustrating an example of the feedforward control.
• the code FFC is a feedforward element performed by the controller 77 (in this embodiment, the (An element for changing the output of the data).
• Hi in FIG. 1 1 is, in the case of performing the feedback control indicates the output of the heater in (without using Fidofu Owado control), when H 2 is obtained by adding the output H i Ficoll one Dofowado elements FFC It shows the heater output (heater output when feedforward control is used). As shown in FIG. 11, the output Hi has a delay from when the control signal SC1 is turned ON to when the control is performed so as to reduce the heater output.
• the feedforward control is performed when the motor is switched between ⁇ N (operating state) and OFF (non-operating state) by the control signal SC1.
• Factor FFC is changing.
• the feedforward control for rapidly decreasing the temperature of the refrigerant is performed, and conversely, near the time t2 when the operation of the motor is stopped, the temperature of the refrigerant is reduced. Feed feed control is performed to raise the temperature rapidly. Therefore, the output of H 2 heater ON control signal SC 1, falls synchronously and OFF, are showing up.
• the wafer By performing the above-described feedforward control, as shown in FIG. 1OA, as the detection result of the temperature sensor 79b that detects the temperature of the refrigerant after circulating through the wafer stage 5, the wafer becomes The detection result of the temperature sensor 79a for detecting the temperature of the refrigerant before circulating in the stage 5 is falling. Also, at time t2 when the operation of the motor is stopped, the detection result of the temperature sensor 79a rises in accordance with the fall of the detection result D11 of the temperature sensor 79b. As a result, the average value D10 of the detection result of the temperature sensor 79a and the detection result of the temperature sensor 79b has a small deviation from the target temperature, and the temperature control can be practiced with high accuracy. You can see that it is. Feedback control is performed in a section between time 1 and time t2 (a section denoted by reference numeral FB in FIG. 11).
• the control signal output from the main control system 95 is used.
• the controller 67 controls the feed-forward control and the feedback control.
• the temperature of the alignment system AL is kept constant by controlling the driving of the Accordingly, it is possible to suppress a temperature change due to heat generation of the light source provided in the alignment system AL or a temperature change due to the advance / retreat of the alignment sensor with respect to the opening on the object plane side of the projection optical system PL.
• a control signal is output from the main control system 95 to a lens controller (not shown).
• the lens controller is the actuator 104b, 104d,
• the control signal output from the main control system 95 to the lens controller is also output to the controller 67, and the controller 67 performs the feedforward control and the feedback control based on this control signal to control the heater 71 1
• the temperature of the projection optical system P is kept constant by controlling the drive of the projector.
• the main control system 95 outputs a return control signal to each part of the exposure apparatus 1 and returns from the abnormal state to a normal state. Perform processing to return to the state. Even in the case of performing this return processing, the movable members provided inside the exposure apparatus 1 such as the reticle stage 2 and the wafer stage 5 are driven, so that the controllers 67 and 77 perform feedforward control based on the return control signal. Exposure equipment by controlling the driving of heater 71 and heaters 75 and 78 respectively
• the amount of heat generated by the movable members provided in the exposure apparatus 1 such as 01b, 101d, 101e, 101f, and 101g differs depending on each process.
• the reticle stage the reticle stage
• the amount of drive of the motor and the number of times of drive are completely different for each process, and the amount of heat generated is greatly different for each process.
• acceleration and deceleration are repeated in short steps, and acceleration is used to improve throughput. Is set to a large value, but in the alignment process, acceleration and deceleration are performed only once (at most several times) when the relative positions of reticle stage 2 and wafer stage 5 are roughly adjusted. Yes, and the maximum acceleration is not set to a very large value.
• control tables showing the control amounts of the feed feed and the feedback control predetermined according to the types (contents) of the control signals output from the main control system 95 are FF controllers 113 and The PID controllers 112 are respectively stored.
• the controllers 67 and 77 select the control amount of the control table according to the type of the control signal, and the control amount of the feed-forward control and the feedback control.
• the drive of the heater 71 and the heaters 75 and 78 is controlled while varying the control amount of the heater.
• the process of assembling the various subsystems into the exposure apparatus includes mechanical connection, wiring connection of electric circuits, piping connection of the air pressure circuit and the temperature control system between the various subsystems. Focusing on the temperature control system, the piping of the temperature control system changes according to the installation status of the exposure apparatus 1. For this reason, after the assembly (installation) of the exposure apparatus 1 is completed, the operator operates the input device 97 shown in FIG. Pipe length from to the wafer stage 5, and Information on the flow rate and flow rate of the refrigerant flowing through each pipe is input (input step). Since the first circulation system C1 is provided inside the exposure apparatus 1, the circulation path length of the refrigerant does not change, but this circulation path length may also be input.
• FIG. 12 shows an example of a process of manufacturing a device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, etc.) using the exposure apparatus and the exposure method according to the embodiment of the present invention.
• a device a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, a micromachine, etc.
• step S10 design step
• step S11 mask manufacturing step
• step S12 wafer manufacturing step
• a wafer manufacturing step a wafer is manufactured using a material such as silicon.
• step S13 wafer process step
• step S14 assembly step
• step S15 inspection step
• step S15 an operation confirmation test of the device fabricated in step S15, Inspection of durability test etc. After these steps, the device is completed and shipped.
• the reticle stage 2 and the wafer are controlled by the feedforward control together with the feedback control.
• Controls the temperature that fluctuates with the driving of movable members such as the actuators 104 b, 104 d, 104 e, 104 f, 104 g provided on the stage 5 and the projection optical system PL As a result, the temperature can be controlled with high accuracy even if a control delay time occurs. Therefore, as a result of maintaining the temperature inside the exposure apparatus 1 at the target temperature, a decrease in the overlay accuracy due to the baseline drift, a decrease in the resolution, and a decrease in the stage positioning accuracy do not occur. In addition, the performance of the exposure apparatus can be stably maintained at the expected level, and the device manufacturing efficiency can be improved.
• control amount and control timing of the feedforward control, and the PID based on the pipe information (pipe length and pipe diameter) relating to the pipe through which the refrigerant flows and the fluid information (flow rate and flow velocity) relating to the refrigerant flowing through the pipe.
• the control constants and control timings of the control are calculated, or the values are appropriately selected or interpolated by using a table storing the correspondence between the control amounts and the information.
• the control amount, control constant, and control timing of the forward control and the PID control may be set based on information other than the above information.
• a circuit pattern (device pattern) formed on a mask is transferred onto a substrate (a light-sensitive substrate such as a silicon wafer or a glass plate).
• a substrate a light-sensitive substrate such as a silicon wafer or a glass plate.
• this process program is set as desired by the user as appropriate. You.
• shot map information the arrangement state of multiple shot areas transferred on the substrate on the substrate, the shape and size (size) of the shot area transferred on the substrate, a single substrate Information about the exposure shot area, such as the number of shots to be transferred, is also included (herein referred to as “shot map information”). Normally, the smaller the shot size, the greater the number of shots transferred onto one substrate. For this reason, the smaller the shot size (in other words, the larger the number of shots), the more times the substrate stage and mask stage move, and the more the number of times the motor that drives that stage accelerates and decelerates. The calorific value also increases.
• the setting units 1 16 and 1 17 should calculate the optimal control amounts of the FF controller 113 and the PID controller 112 using such shot map information. desirable.
• the feedforward element FFC described in the above embodiment (FIG. 11) not only in view of the piping information and fluid information but also in view of the shot map information.
• the amount of change (control amount) of the FFC is equal to or greater than a predetermined amount, and if the number of shots is small, the amount of change of the FFC is smaller than the predetermined amount. It may be calculated as a function of map information (number of shots / shot size). At this time, not only the method of calculating as a function but also a table showing the relationship between shot map information (number of shots, etc.) and the amount of change in FFC, which was obtained through experiments or simulations, is prepared in advance.
• the control amount of the FFC according to the number of shots may be selectively used. Further, not only the control amount of the FFC but also the control timing is set as a function of the shot map information (for example, if the number of shots is larger than a predetermined number, the control timing of the heater output H2 is set to the number of shots. If the number is less than the specified number, the control timing will be advanced, etc.).
• the scan direction (movement direction of the wafer stage) should be the same direction in each shot (referred to as “one-way scan method”). Force or almost every shot (for some shots, the scan direction at the time of the previous shot exposure)
• the scan direction may be reversed (referred to as “alternate scan method”), or the scan direction may be completely reversed for each shot (referred to as “perfect alternate scan method”). Some of them can be selected.
• the scan direction information at the time of the scan exposure can be arbitrarily set by the user of the exposure apparatus as exposure sequence information in a process program.
• the scan direction of the mask stage is also set to an appropriate direction according to the scan direction of the wafer stage.
• the alternate scan method or the complete alternate scan method for example, in the first shot, scanning is performed from the front of the sheet of FIG. 1 and FIG. 2 to the back (one Y direction), and in the second shot, the sheet of FIG. 1 and FIG.
• the stage scan is performed only once when exposing one shot, such as scanning in the Y direction) and scanning in the third shot in the Y direction.
• the first shot, the second shot, and the third shot are exposed during one-way scanning in a predetermined scanning direction (for example, one Y direction).
• the stage is moved back (to move the stage in the + Y direction, and the second shot is performed at this time) in order to perform the scan exposure of the second shot. Exposure is not performed).
• the number of stage movements increases by the number of return movements compared to the alternate scan method or the complete alternate scan method, and the heat generated by the motor increases accordingly. Will be.
• the one-way scanning method not only the wafer stage 5 but also the reticle stage 2 and a well-known reticle blind (synchronous blind) (not shown) need the return movement as described above. The heating value of the entire exposure device tends to increase.
• the setting units 1 16 and 1 17 calculate the optimal control amounts of the FF controller 113 and the PID controller 112 also using the exposure sequence information (scan method information) as described above. It is desirable to keep it.
• the feedforward element FFC described in It is desirable to control in consideration of the information (scan method information).
• the change amount (control amount) of the FFC is set to a predetermined amount or more when the one-way scan method is set, and the change amount of the FFC is set when the alternate scan method or the completely alternate scan method is set.
• the control amount of the FFC may be calculated as a function of the exposure sequence information (scan method information) so that the amount is smaller than the predetermined amount.
• a table indicating the relationship between the scan method and the FFC control amount may be prepared in advance, and the FFC control amount may be selected according to the set scan method.
• control timing of the heater output H2 in the case of the one-way scan method and the control timing in the case of the alternate scan method May be faster than that).
• Information that can be set by the user arbitrarily includes information on the speed and acceleration of the stage ( ⁇ ⁇ stage, mask stage) during scan exposure. Some users want to focus on pattern printing accuracy rather than throughput.
• the stage is not scanned at the maximum speed or acceleration, and a certain limit (upper limit, lower limit) is set.
• the operation control of the exposure apparatus is set so as to perform scan drive by multiplying the value.
• the vibration generated on the stage or the body tends to increase accordingly, so the user may set a limit on the stage acceleration.
• the motor that drives the stage tends to generate more heat as the acceleration increases.
• the setting sections 116 and 117 also use the stage speed acceleration information (including the acceleration time) as described above to generate the FF controller 113 and the PID controller 112. It is desirable to calculate an optimal control amount.
• the feedforward element FFC described in FIG. 11 it is desirable to control the feedforward element FFC described in FIG. 11 in consideration of the stage speed / acceleration information.
• the FFC change amount control amount
• the stage speed Z acceleration is set to be equal to or higher than the predetermined speed Z acceleration (for example, when set to the maximum acceleration based on the driving capability of the stage)
• the FFC control is performed so that the FFC change amount is smaller than the specified amount.
• the amount may be calculated as a function of the stage speed Z acceleration information.
• a table showing the relationship between the stage speed and acceleration information and the FFC control amount is prepared in advance, and the optimal FFC control amount is appropriately selected from the table according to the speed and acceleration information.
• control amount of the FFC is set as a function of the stage speed acceleration information (for example, when the acceleration is set to be larger than the predetermined acceleration, the control of the heater output H2 is performed).
• the timing may be set to advance the control timing when the acceleration is set to be smaller than the predetermined acceleration.
• the stage speed Z acceleration information may be not only the value of the speed value and the acceleration value itself, but also information on the current and voltage applied to the motor.
• Information on the above-described process program is obtained by incorporating a plurality of types of data in advance into the exposure data file stored in the storage device 96 shown in FIG.
• the user may be able to select as appropriate with the input device 97, or the user may be able to input as a new exposure data file from the input device 97 as appropriate.
• the feedforward element FFC is changed at the time (t1, t2) at which the motor switches between ON and OFF.
• t1, t2 the time at which the motor switches between ON and OFF.
• a stage drive motor is provided for each scan exposure of each shot, and for each shift operation (stepping operation) to each shot. ON, OFF, acceleration and deceleration are repeated many times.
• feedforward control is applied when the response of feedback control (usually PID control) cannot be completed in time (timing) due to control dead time (delay time) or time constant. Rather, in terms of temperature stability, during a limited time (while processing one wafer or continuously processing multiple wafers), only when the heat generation condition changes greatly, (Eg first It is desirable to perform feedforward control (only when the motor starts and when the motor stops last).
• a predetermined number of substrates for example, 25 are taken as one lot, and a plurality of substrates in the lot are continuously exposed in lots (pattern transfer exposure process). I do.
• the temperature control of the stage drive motor is performed by the first shot of the first wafer in the lot.
• the exposure start of the shot (start of scan driving of the stage) is regarded as the time t1 shown in FIG. 11, and the end of exposure of the last shot of the last wafer in the lot (end of scan drive of the stage) is regarded as the time in FIG. It is desirable that the control be regarded as t2.
• feed-forward control that sharply lowers the coolant temperature is performed, and thereafter (FF control).
• Feedback control FB control
• FF control feed-forward control that sharply raises the temperature of the refrigerant is performed, it is good.
• the command for performing the feedforward (FF) control is such that the FF-controlled refrigerant is used for the above t1 or t2 in consideration of a control dead time and a thermal time constant according to the pipe length. It is most preferable that the timing is such that the motor arrives at the point in time. However, the present invention is effective even if the timing arrives at a point slightly later than tl.t2.
• the control as described above is not limited to the control within the port, but can be similarly applied to the case where the wafer is continuously exposed to light over a plurality of ports.
• the optimal exposure conditions optimal resist thickness, optimal focus position, optimal exposure amount, etc.
• when multiple lots are to be exposed continuously with a small number of wafers as one lot When the pause between mouths is short.
• the scanning exposure of the first shot of the first wafer of the first lot is started.
• the scan exposure of the last shot of the last wafer of the third lot is stopped, the above-described FF control is performed, and during that time, the FB control may be performed.
• the motor temperature is not controlled without FF control. It is to control.
• a timer (motor drive status sensor 98 shown in Fig. 5) that starts timing after the motor drive stops is provided. The period may be recognized from the output of the timer 98, and the operation may be controlled by the main control system 95 so that the FF control is not performed within a predetermined time. If the time measured by the timer 98 before the next start of the motor is within the above-mentioned predetermined time, the motor temperature may be controlled by feedback (FB) control. good. In this way, the main control system 95 determines whether or not to perform FF control in accordance with the output of the motor drive state sensor (timer 1) 98 and performs motor temperature control. Is desirable.
• the timing of performing the FF control is when the stage scan of the first shot of the first wafer of the lot is started and when the stage scan of the last shot of the last wafer is stopped.
• the initial startup timing of the stage drive motor after the wafer is mounted on the stage 5 is such that the stage 5 moves the first shot on the wafer from the wafer exchange position (not shown).
• This is the positioning operation when positioning to the exposure position (within the exposure field of the projection lens).
• the stage scan for the first shot is started immediately after this positioning operation, so that the heat generated by the stage drive motor during the positioning operation may affect the stage temperature during exposure.
• the FF control (control for rapidly lowering the temperature of the coolant) may be performed before the wafer stage 5 starts the stage scan for the first shot. For example, when the wafer stage 5 positions the first shot of the first wafer in the lot to the exposure position (for example, the wafer stage moves from the wafer exchange position to the first shot exposure position). FF control may be performed (when the motor is started when the motor is started), and FB control may be performed during the stage scan of the first shot.
• the FF control for rapidly increasing the temperature of the refrigerant is performed at a point in time after the stage scan for the final shot of the final wafer is stopped (for example, the stage drive motor for moving the wafer stage 5 to the ⁇ -C replacement position) (At or immediately after the driving is completed).
• the stage drive motor for moving the wafer stage 5 to the ⁇ -C replacement position for example, the stage drive motor for moving the wafer stage 5 to the ⁇ -C replacement position
• the wafers coated with resist by the CZD device are sequentially transported to the exposure device side where the exposure process is performed. After the processing, the wafer is again conveyed to the CZD device, and goes through a loop in which the developing processing is performed.
• the temperature control of the stage drive motor during the continuous exposure processing of the wafers in the lot is performed as described above. FF control only for the first shot of the first wafer and the last shot of the last lot of the lot.
• the wafer transfer state from the CZD to the exposure apparatus is not always the normal transfer state.
• the next wafer may not be transported to the exposure equipment due to some trouble on the CZD equipment side.
• This wafer transfer abnormality is not limited to the transfer process between the CZD device and the exposure device, but can also occur during the transfer process to the wafer stage inside the exposure device. If the wafer is not continuously transported to the wafer stage due to some kind of trouble, and as a result, continuous exposure processing of the wafer cannot be performed, both the wafer and the reticle stage will be stationary (the motor is stationary). As a result, the motor temperature, which has been controlled to a predetermined temperature, gradually decreases.
• a timer that starts timing from the point at which the stage drive motor stops driving due to an abnormal wafer transfer May be shared with the marker 98 or may be provided separately) in the exposure apparatus, and after the stage drive motor is stopped, the motor is stopped for a predetermined time (for example, 10 minutes or more). It is necessary to identify whether or not it is continuing. If the timer measures a predetermined time or more, the first shot (scan) of the next wafer transferred to the wafer stage is scanned.
• the main control system 95 may be configured to perform FF control for the start of driving).
• the control amount and control timing of the FF control variable at that time according to the time measured by the timer (for example, the FF control amount when the motor is stopped for 15 minutes) It is desirable to set the FF control amount as a function of the motor stop time so that is larger than the FF control amount when the motor is stopped for 10 minutes.
• the stop of the stage drive motor does not occur only when the wafer is abnormally transported, but can also occur due to some trouble on the exposure apparatus side.
• the alignment mark cannot be detected due to the wafer process (for example, when the mark cannot be detected properly due to uneven coating of the resist or flat surface processing, or when a substance that does not transmit the alignment light is applied onto the mark.
• the exposure equipment will perform a rescue process for the user. (Assist processing by the operator) may be required, but during this assist processing, the exposure device will be stopped.
• the exposure apparatus may stop due to a power failure or an earthquake, or the stage drive motor may stop due to a failure of the stage apparatus.
• the stage drive motor may stop due to a failure of the stage apparatus.
• the setting units 1 16 and 1 17 also use the information indicating the operating state of the stage drive motor (motor stop period information) as described above, and use the FF controller 113 and the PID controller 111 as well. It is better to calculate the optimal control amount of 2 desirable.
• the FF controller 1 By calculating and setting the optimal control amount of the PID controller 13 and the PID controller 112, or by setting the control timing thereof, it is possible to perform more accurate feedforward control. Further, by using or not using FF control as a motor temperature control method based on the operating state information of the stage drive motor, more practical temperature control can be realized in light of the exposure sequence.
• FIG. 13 is a schematic view of an exposure apparatus according to the second embodiment of the present invention.
• the exposure apparatus of the present embodiment includes an illumination optical system IU, and an exposure apparatus including a reticle stage 2, a projection optical system PL, and a wafer stage 5 as a control target. It is broadly divided into an exposure chamber 140 that accommodates the main body 130 and a cooling device 144 that cools the refrigerant circulating in the exposure main body 130.
• the exposure chamber 140 that houses the exposure main body 130 is installed on the floor F1 via the anti-vibration pads 144, 142, and the cooling device 144 is located below the floor 1
• the vibration damping pads 144, 144 are installed on the top 2, and the exposure chamber 144 and the cooling device 144 are separately installed.
• a pipe is provided between the exposure chamber 140 and the cooling device 144, and a temperature control system including a circulation system C5 and a circulation system C6 is provided similarly to the temperature control system shown in FIG.
• the exposure apparatus of the present embodiment includes, in addition to the exposure main body 103 described above, heaters 75 and 78 and a controller 77 that form a part of the second control system 62 shown in FIG. It is housed in 40 constant temperature rooms 1 4 1.
• a force not shown is a controller 67 which is a part of the first control system 62 shown in FIG. 5, and a heater corresponding to the heater 71 driven by the controller 67.
• Constant temperature room 1 4 Housed in one.
• the cooling device 144 installed on the floor F1 includes the heat exchanger 70 and the pump 74 shown in FIG.
• the priming device 144 includes the refrigerator 73 and the evaporator 65 shown in FIG. 5 in addition to the heat exchanger 70 and the pump. .
• This cooling device 144 corresponds to the first setting means according to the present invention.
• the exposure apparatus of the present embodiment has a configuration in which the cooling device 144 as the first setting means, the heater as the second setting means and the controller as the control means are separated, and the second setting means The heater as the means and the controller as the control means are arranged near the reticle stage 2, the projection optical system PL, the wafer stage 5, and the like as the control objects.
• This configuration is used to control the temperature of the control target with high accuracy by shortening the control dead time by setting the heaters 75, 788, etc., which set the temperature, close to the control target. It is.
• the temperature control system provided in the exposure apparatus of the present embodiment is similar to the temperature control system of the first embodiment (see FIG. 5), and the temperature sensors 76a, 76b, 79a, 79b, etc.
• the temperature of the refrigerant circulating in the circulation system C 5, C 6, etc. is controlled by feedforward control based on the detection results of the temperature sensors 76 a, 76 b, 79 a, 79 b, etc. This is because the higher the level ratio (S / N ratio) between the detection result and the noise is, the better for control.
• the heaters 75, 78, etc. should be closer to the control target.
• the heaters 75, 78, etc. are arranged at arbitrary positions. It is not always possible. For this reason, the heaters 75, 788, etc. have a constant responsiveness that can maintain the temperature in the constant temperature chamber 141 within the allowable value of the temperature change required for maintaining the performance of the exposure apparatus.
• the temperature sensors 76 a, 76 b, 79 a, 79 b It is sufficient to place them together.
• the heaters 75, 788, etc. are arranged inside the constant temperature chamber 141 of the exposure chamber 140, the piping length from the heater 75 to the reticle stage 2 and the heater 78 to the wafer stage 5 It is possible to keep the pipe length and the like constant regardless of the installation state of the exposure apparatus 1. As a result, the operation of setting the control constants and control timings of the PID controllers 112 and FF controllers 113 provided in the controllers 67 and 77 described in the first embodiment described above can be omitted. Therefore, the time required for installing the exposure apparatus 1 can be reduced.
• the temperature control of the control target such as the reticle stage 2, the wafer stage 5, and the projection optical system PL is performed by the same feedback control and feed-forward control as in the first embodiment described above. The description is omitted.
• the heat generated from the heaters 75 and 78 is generated inside the constant temperature chamber 141. It is also conceivable to affect temperature stability.
• the surroundings of each heater are covered with a casing (not shown) and the casing is covered with a heat insulating material (not shown). (Not shown). Further, the area around the heat insulating material may be air-conditioned with gas controlled at a predetermined temperature.
• the pipes may be covered with a heat insulating material.
• the pipes C5 and C6 not only the pipes C5 and C6 but also all the pipes arranged in the constant temperature chamber 141 may be configured to be covered with a heat insulating material.
• the reticle stage 2 is a temperature sensor that detects the refrigerant temperature before circulating through the reticle stage 2 and the refrigerant temperature after circulating through the reticle stage 2.
• 76a and 76b were provided, and the average of these detection results was obtained as the temperature of the reticle stage 2.
• the coolant temperature before circulation to the wafer stage 5 the coolant temperature before circulation to the wafer stage 5
• temperature sensors 79a and 79b for detecting the temperature of the refrigerant after circulating the wafer stage 5, respectively were provided, and the average of these detection results was obtained as the temperature of the wafer stage 2.
• FIG. 14 is an external perspective view of a reticle stage provided in the exposure apparatus according to the third embodiment of the present invention.
• FIG. 15 is an external perspective view of a wafer stage provided in the exposure apparatus according to the third embodiment of the present invention. It is.
• the difference between the reticle stage shown in Fig. 14 and the reticle stage shown in Fig. 2 is that a temperature sensor 200 that detects the temperature of the reticle fine movement stage 18 is installed, and the wafer stage shown in Fig. 15 However, the difference from the wafer stage shown in FIG. 4 is that the temperature sensor 201 is provided on the wafer stage 5.
• These temperature sensors 200 and 201 are mounted embedded in the reticle fine movement stage 18 and wafer stage 5, respectively, and directly detect the temperature of reticle fine movement stage 18 and wafer stage 5, respectively. I do.
• the temperature sensors 200 and 201 may be mounted in a state of being completely embedded in the reticle fine movement stage 18 and the wafer stage 5, or may be mounted with a part thereof exposed. When a part of the temperature sensor 201 is exposed, the temperature sensor 201 needs to be disposed at a position slightly separated from the position where the wafer W is mounted.
• the detection results of these temperature sensors 200 and 201 are output to the controller 77 shown in FIG.
• temperature sensor 200 does not necessarily need to be attached to reticle fine movement stage 18, and may be attached to reticle coarse movement stage 16. Further, instead of attaching only one temperature sensor, a plurality of temperature sensors may be attached and predetermined arithmetic processing (for example, averaging processing) may be performed on each detection result.
• FIG. 16 is a sectional view of a plane orthogonal to the moving direction of the linear motor provided in the exposure apparatus according to the fourth embodiment of the present invention.
• the linear motor shown in FIG. 16 can be used as Y linear motors 15, 15, X voice coil motor 17 X, and Y voice coil motor 17 Y provided on reticle stage 2. It can be used as linear motors 33, 33 and X linear motor 35 provided on wafer stage 5.
• the linear motor shown in FIG. 16 is a moving coil type of motor, and includes a stator 300 and a mover 310.
• the stator 300 faces the magnet 301 attached to the yoke 302 and the magnet 303 attached to the yoke 304 so that the different poles face each other. It is configured to be supported by fixed yokes 305 and 306.
• the mover 301 is composed of a jacket 311, a coil 312, and a temperature sensor 320, and is arranged between the magnet 301 and the magnet 303.
• a coil 312 is disposed in the inside 313 of the jacket 311 and a refrigerant is introduced to cool the coil 312.
• the temperature sensor 320 is preferably disposed near the coil 310 that generates heat when energized. Although only one temperature sensor 320 is shown in FIG. 16, a plurality of temperature sensors may be provided on the mover 310. As described above, in the present embodiment, since the temperature sensor 3200 is arranged near the coil 312 as a heat source, the temperature change in the reflow motor can be accurately detected. Can be accurately controlled.
• the present invention is not limited to the above embodiments, and can be freely modified within the scope of the present invention.
• the configuration in which the temperature of the control target such as the reticle stage 2, the wafer stage 5, and the projection optical system PL is controlled by controlling the temperature of the coolant flow rate is described as an example.
• the present invention is not limited to this.
• the flow rate and the flow rate of the refrigerant may be controlled to control the temperature of the control target. In this case, it is preferable to vary the control amount of the feedforward control according to the flow rate or the flow velocity.
• a liquid refrigerant or a gas refrigerant can be used.
• the temperature of the control target may be directly controlled using a temperature adjusting element such as a Peltier element without using a refrigerant.
• a temperature adjusting element such as a Peltier element
• the same type of refrigerant (HFE) is used. However, depending on the temperature control accuracy required for each circulation system and the installation environment, different refrigerants may be used for each circulation system. Good.
• the movable means is a movable member provided in the exposure apparatus 1 such as a reticle blind provided in the illumination optical system IU to shape illumination light into a rectangular shape. Includes all components that require temperature control.
• each block configuring the controller 77 shown in FIG. 8 may be configured by hardware using an electronic circuit, or may be configured by software.
• the function of each block is realized by the CPU (Central Processing Unit) executing a program that specifies the function of each block.
• the temperature controller (heat exchanger 70) and the pump for driving the refrigerant are partially shared. However, the temperature controller (heat exchanger 70) and the pump for driving the refrigerant are separated from each other.
• Various configurations can be adopted, such as common use in a system.
• the configuration is such that the refrigerant temperature before circulating the reticle stage 2 and the wafer stage 5 and the refrigerant temperature after circulating are simply averaged, but the weighting average may be used.
• the following method can be adopted as the method of weighted averaging.
• weighting is applied according to the material of the material such as thermal conductivity. The higher the ratio (the higher the thermal conductivity), the higher the weight.)
• weighting is performed according to the presence or absence of the different heat source and the amount of heat generated. For example, when another heat source exists on the flow path, the weight of the temperature sensor output on the side closer to the other heat source is increased. Also, when another heat source exists outside the flow path, the heat generated by the other heat source is transmitted to the temperature sensor via the air, so that the weight of the output of the temperature sensor near the other heat source is increased.
• the detected temperature of the inlet-side temperature sensor, the detected temperature of the outlet-side temperature sensor, the control temperature of the refrigerant (control temperature calculated by a simple average), and the measured baseline amount (or the baseline amount) (Variation amount) is stored in the memory, and this storage operation is repeated for each baseline measurement.
• an estimation operation is performed to determine which weight should be given to the inlet side temperature or the outlet side temperature to reduce the baseline fluctuation. Then, weighted averaging is performed based on the estimated weights.
• the temperature control of the wafer stage 5 and the temperature control of the reticle stage 2 are controlled by the same controller 77 (the heaters 75 and 78 are controlled by the same controller 77).
• the present invention is not limited to this, and the temperature of the wafer stage system (heater 78) and the reticle stage system (heater 75) are controlled independently by separate dedicated controllers. It may be configured as follows.
• the substrate of the present embodiment includes not only a wafer W for a semiconductor element, but also a glass substrate for a liquid crystal display device, a ceramic wafer for a thin-film magnetic head, or an original mask (synthesis) used in an exposure apparatus. Quartz, silicon, etc.) are applied.
• the exposure apparatus 1 includes a step-and-scan type scanning exposure apparatus (scanning stepper; USP 5,473,410) for synchronously moving the reticle R and the wafer W to scan and expose the pattern of the reticle R.
• the present invention can also be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the reticle R is exposed while the scale and the wafer W are stationary, and the wafer W is sequentially moved in steps.
• the type of the exposure apparatus 1 is not limited to the exposure apparatus for manufacturing semiconductor devices, which exposes a semiconductor device pattern onto the wafer W.
• the present invention can be widely applied to an exposure apparatus for manufacturing an element, an exposure apparatus for manufacturing a thin-film magnetic head, an image sensor (CCD), a reticle, and the like.
• Ultra-high pressure mercury lamps that emit bright lines such as g-rays (wavelength 436 nm) and i-rays (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), and ArF excimer laser (wavelength 1 93 nm), F 2 excimer laser (wavelength 1 57 nm), K r 2 laser (wavelength 146 nm), a high frequency generation equipment of a YAG laser, or be used a high-frequency generator of the semiconductor laser it can.
• charged particle beams such as X-rays and electron beams can be used.
• a thermionic emission type lanthanum hexaborite (LaB6) or tantalum (Ta) can be used as an electron gun.
• a configuration using a reticle R may be used, or a pattern may be formed directly on a wafer without using the reticle R.
• the magnification of the projection optical system PL may be not only a reduction system but also an equal magnification system or an enlargement system.
• the projection optical system PL the case of using the far ultraviolet rays such as an excimer laser using a material which transmits far ultraviolet rays such as quartz and fluorite as glass material, catadioptric system when using a F 2 laser or X-ray Alternatively, a refraction type optical system may be used (the reticle R may be of a reflection type), and an electron beam may be used. In the case of using an electron beam, an electron optical system including an electron lens and a deflector may be used as the optical system. It goes without saying that the optical path through which the electron beam passes is in a vacuum state. Further, the present invention can also be applied to a proximity exposure apparatus that exposes a reticle R pattern by bringing a reticle R and a wafer W into close contact with each other without using the projection optical system PL.
• each of the stages 2 and 5 may be of a type that moves along a guide or a guideless type that does not have a guide.
• the reticle stage 2 and the wafer stage 5 are driven by a magnet unit (permanent magnet) having a two-dimensional magnet and an armature unit having a two-dimensional coil. Drives 2 and wafer stage 5 Alternatively, a flat motor may be used. In this case, one of the magnet unit and the armature unit is connected to the reticle stage 2 and the wafer stage 5, and the other of the magnet unit and the armature cut is a moving surface of the reticle stage 2 and the wafer stage 5. It may be provided on the side (base). Industrial applicability
• the temperature control system controls the temperature of the movable means using the feedforward control, and the temperature change of the movable means is quickly suppressed, so that a dead time in the control is generated.
• the temperature in the exposure apparatus can be set to a target temperature with high accuracy and precision. As a result, the performance of the exposure apparatus can be stably maintained at the expected performance.

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