WO2003077306A1 - Dispositif a semi-conducteur et son procede de fabrication - Google Patents

Dispositif a semi-conducteur et son procede de fabrication Download PDF

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Publication number
WO2003077306A1
WO2003077306A1 PCT/JP2003/002787 JP0302787W WO03077306A1 WO 2003077306 A1 WO2003077306 A1 WO 2003077306A1 JP 0302787 W JP0302787 W JP 0302787W WO 03077306 A1 WO03077306 A1 WO 03077306A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
semiconductor
protective film
mesa
electrode
Prior art date
Application number
PCT/JP2003/002787
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English (en)
Japanese (ja)
Inventor
Hideyuki Andou
Original Assignee
Sankan Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sankan Electric Co., Ltd. filed Critical Sankan Electric Co., Ltd.
Priority to JP2003575416A priority Critical patent/JPWO2003077306A1/ja
Publication of WO2003077306A1 publication Critical patent/WO2003077306A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, to a semiconductor device having a mesa groove and a method for manufacturing the same.
  • annular inclined groove (mesa groove) along the outer peripheral surface of a semiconductor substrate to partition the semiconductor element and to make the semiconductor element have a relatively high breakdown voltage.
  • a mesa diode (a mesa diode) is cited.
  • Figure 4 shows a cross section of a general mesa diode.
  • the mesa diode 51 includes a semiconductor substrate 52, a force source electrode 53 formed on one main surface (upper surface) of the semiconductor substrate 52, and the other main surface (lower surface) of the semiconductor substrate. ) Formed on the anode electrode 54.
  • the semiconductor substrate 52 includes a P + -type semiconductor region 55 forming an anode region, and an n-type semiconductor region 56 and an n + -type semiconductor region 57 forming a force source region.
  • a mesa groove 58 is formed on the upper surface of the semiconductor substrate 52 so that the p + type semiconductor region 55, the n ⁇ type semiconductor region 56, the n + type semiconductor region 57, and the pn junction are exposed.
  • a protective film 59 made of glass or the like is formed on the surface of the mesa groove 58, and the semiconductor regions 55 to 57 exposed by the mesa groove 58 are covered with the protective film 59.
  • a mesa diode having such a configuration has been manufactured by, for example, a procedure described below.
  • the upper surface of the semiconductor substrate (semiconductor wafer) 52 on which the p + type semiconductor region 55, the n ⁇ type semiconductor region 56 and the n + type semiconductor region 57 are formed is etched to have a U-shaped cross section.
  • a mesa groove 58 is formed.
  • the applied glass is fired. This allows the glass film Is formed, and the upper surface of the semiconductor wafer 52 is covered with the formed glass film.
  • the glass film on the ⁇ + type semiconductor region 57 in the region where the force source electrode 53 is to be formed is removed by etching to form a protective film 59 covering the surface of the mesa groove 58.
  • an aluminum film is formed by vacuum evaporation or the like on the portion where the glass film has been removed by etching.
  • the surface of the aluminum film is etched to form a force source electrode 53 from the aluminum film.
  • titanium, nickel, palladium and silver are sequentially vacuum-deposited to form an anode electrode 54. Then, the semiconductor wafer 52 is diced along the mesa groove 58.
  • the protective film 59 covering the mesa groove 58 is liable to cause insulation rupture if the electrical and physical properties are not stable. For this reason, in the conventional manufacturing process, the glass applied to the mesa 58 is fired at, for example, about 700 ° C. to reduce the possibility of insulation rupture of the protective film 59, and the glass film (the protective film 5 9) to stabilize the characteristics of the protective film 59.
  • the material (for example, aluminum) constituting the force source electrode 53 may be deteriorated by heat.
  • the temperature at which the material of the force sword electrode 53 deteriorates is, for example, the melting point of the material. Since the melting point of the aluminum film constituting the power source electrode 53 is about 600 ° C., after forming an aluminum film on one main surface of the semiconductor substrate 52, the protective film 59 is formed by firing. When this is generated, the aluminum film is heated at a temperature higher than the melting point. At temperatures above the melting point, the aluminum film is susceptible to substantial damage. Therefore, in the conventional manufacturing process, a protective film 59 for covering the mesa groove 9 is formed first, and then a force source electrode 53 is formed in order to make the aluminum film hard to substantially damage.
  • the protective film 59 is formed on the entire upper surface of the semiconductor wafer 52 including the mesa groove 58, the protective film 59 in the area where the force electrode 53 is to be formed is etched. In some cases, the protective film 59 may remain on the edge of the region where the force source electrode 53 is to be formed. If the aluminum film forming the power source electrode 53 is formed on the area where the power source electrode 53 is to be formed while the protective film 59 remains, the aluminum film on the remaining protective film 59 protrudes. . In this case, the projection of the aluminum film hinders the etching of the surface of the aluminum film. Also, it is difficult to etch the protruding portion of the aluminum film so that the edge of the aluminum film and the edge of the mesa groove 58 are aligned in a cross section. For this reason, it was difficult to perform etching with high accuracy.
  • the present invention has been made in view of the above problems, and has as its object to provide a semiconductor element capable of improving productivity and a method for manufacturing the same. Disclosure of the invention
  • a method for manufacturing a semiconductor device includes a semiconductor substrate (2) and a semiconductor substrate (2) formed in a predetermined region on one main surface of the semiconductor substrate (2).
  • a metal film forming the electrode is formed in a predetermined region on one main surface of the semiconductor substrate (2).
  • the mesa groove (9) is formed along an outer periphery of a negative main surface of the semiconductor substrate (2), and the metal film ( 11. Cover the inner surface of the mesa groove (9) with a material that is cured by heat at a temperature lower than the temperature at which Forming the protective film (3), and dicing the semiconductor substrate (2) along the mesa groove (9) ′ covered with the protective film (3). It is characterized by. According to this configuration, after a metal film forming an electrode is formed in a predetermined region on one main surface of the semiconductor substrate, a groove is formed on one main surface of the semiconductor substrate, and the metal film is heated by heat.
  • a protective film covering the inner surface of the groove is formed from a material that cures at a temperature lower than the temperature at which substantial damage is caused. Therefore, it is not necessary to repeat the etching process a plurality of times to form the protective film and the metal film. Therefore, the manufacturing process of the semiconductor device can be simplified, and the productivity of the semiconductor device can be improved. Further, since the protective film is formed using a material that is cured by heat at a temperature lower than the temperature at which the metal film deteriorates, the formation of the protective film does not substantially damage the metal film.
  • the electrode (4) is formed using aluminum, and the electrode (4) is formed using a material that is cured by heat at a temperature of 100 ° C. to 400 ° C. lower than the melting point of aluminum-palladium.
  • a protective film (3) may be formed.
  • a semiconductor element in order to solve the above problem so as to form the protective film (3) from a polyimide resin, includes a semiconductor substrate (2), A first electrode (4) formed on a predetermined area on one main surface of the semiconductor substrate (2), and a second electrode (5) formed on the other main surface of the semiconductor substrate (2).
  • the first electrode (4) is composed of a metal film (1 1)
  • the protective film (3) is composed of the metal film (1 1). It is characterized by comprising a material that is cured by heat at a temperature lower than the temperature at which it deteriorates.
  • the protective film is made of a material that is cured by heat at a temperature lower than the temperature at which the metal film deteriorates, substantial damage to the electrodes is caused when the protective film is formed. Will not give.
  • the protective film can be formed after the electrode is formed, and it is not necessary to repeat a plurality of etching steps to form the protective film and the electrode. Therefore, the manufacturing process of the semiconductor device can be simplified, and the productivity of the semiconductor device can be improved.
  • the mesa groove (9) is formed by etching one main surface of the semiconductor substrate (2) using the metal film (11) constituting the first electrode (4) as a mask. It may be formed.
  • the semiconductor substrate (2) has a second conductivity type second semiconductor region in which an interface between a first conductivity type first semiconductor region (6) and the first five semiconductor region (6) forms a pn junction. (7) and a third conductive type third semiconductor region (8) in contact with the second semiconductor region (7) and having a higher concentration than the second semiconductor region (7).
  • the protective film (3) may be made of a material which is cured by heat at a temperature lower by 1100 ° C. to 400 ° C. than a melting point of the metal film constituting the first electrode (4).
  • the first electrode (4) may be made of aluminum, and the protective film (3) may be made of a material which is cured by heat at 200 to 500 ° C.
  • the protective film (3) may be made of polyimide resin.
  • FIG. 1 is a cross-sectional view showing a configuration of a mesa-type diode according to an embodiment of the present invention.
  • 2 (a) to 2 (g) are cross-sectional views for explaining a manufacturing process of the mesa diode according to the embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a modification of the semiconductor device according to the embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a configuration of a conventional mesa diode.
  • the mesa diode 1 has a semiconductor substrate 2 and a protective film 3 , A power source electrode 4 and an anode electrode 5.
  • the semiconductor substrate 2 includes a first semiconductor region 6, a second semiconductor region 7, and a third semiconductor region 8. A portion of the semiconductor substrate 2 excluding the second semiconductor region 7 and the third semiconductor region 8 constitutes a first semiconductor region 6.
  • the first semiconductor region 6 is formed of a semiconductor region of a first conductivity type, for example, ap + type, and functions as a cathode region.
  • the first semiconductor region 6 has 30 ⁇ ! The thickness is about 300 ⁇ m.
  • the first semiconductor region 6 is formed on the impurity concentration of about 1 X 1 0 16 cm one 3 ⁇ 1 X 1 0 21 cm- 3.
  • the second semiconductor region 7 is formed on one main surface of the first semiconductor region 6.
  • the second semiconductor region 7 is composed of a semiconductor region of the second conductivity type, for example, n-type.
  • the second semiconductor region 7 is formed with a thickness of about 10 / Xm to 200 m.
  • the second semiconductor region 7 is formed with an impurity concentration of about 1 ⁇ 10 12 cm— 3 to 1 ⁇ 10 18 cm— 3 . Therefore, the semiconductor substrate 2 has a pn junction formed at the interface between the second semiconductor region 7 and the first semiconductor region 6.
  • the third semiconductor region 8 is formed on the upper surface of the second semiconductor region 7.
  • the third semiconductor region 8 is formed of an n + -type semiconductor region having an n-type impurity concentration higher than that of the second semiconductor region 7, and functions as an anode region.
  • the third semiconductor region 8 is formed to a thickness of about 50 ⁇ to 300 / m.
  • the third semiconductor region 8 is formed on the impurity concentration of about l X 1 0 17 cm one 3 ⁇ 1 X 1 0 22 cm- 3. '
  • an inclined groove (mesa groove) 9 is formed on the upper surface of the semiconductor substrate 2.
  • the mesa groove 9 is formed in an annular shape along the outer peripheral edge of the semiconductor substrate 2.
  • the mesa groove 9 has a depth such that the first semiconductor region 6 is exposed at the bottom surface. Therefore, the third semiconductor region 8, the second semiconductor region 7, and the first semiconductor region 6 are exposed from the side and bottom surfaces of the mesa groove 9, and the pn junction between the first semiconductor region 6 and the second semiconductor region 7 is further increased. The edge is exposed.
  • the mesa groove 9 is formed in a shape inclined from the upper surface of the semiconductor substrate 2 toward the lower surface (other surface), for example, so that the upper surface side of the semiconductor substrate 2 has a reduced diameter (a divergent shape). Therefore, the mesa diode 1 has a substantially trapezoidal shape as shown in FIG.
  • the protective film 3 includes the first semiconductor region 6, the second semiconductor region 7, ⁇ Formed on the side and bottom surfaces of the mesa groove 9 so as to cover the third semiconductor region 8.
  • the protective film 3 is made of a material that cures at a lower temperature than the material constituting the cathode electrode 4 is deteriorated by heat.
  • the temperature at which the material of the cathode electrode 4 deteriorates is, for example, the melting point of the material. Therefore, it is preferable that the protective film 3 be made of a material that is cured by heat at a temperature lower by 100 ° C. to 400 ° C. than the melting point of the material forming the force source electrode 4.
  • the protective film 3 may be made of a polyimide resin.
  • the polyimide resin undergoes heat treatment at a temperature lower than the melting point of aluminum (about 600 ° C) (about 200 ° C to 500 ° C), and the solvent contained in the resin volatilizes and shrinks. Can be heat cured. Further, the polyimide resin can form a relatively hard and dense resin film by thermosetting at a temperature of 200 ° C. to 50 ° C. Therefore, when the polyimide resin is used as the material of the protective film 3, the aluminum film forming the cathode electrode 4 is not substantially damaged by heat. For this reason, in the present embodiment, a polyimide resin is used as the material of the protective film 3.
  • Force sword electrode 4 is made of a metal film such as an aluminum film. Force sword electrode 4 is formed on one main surface of semiconductor substrate 2.
  • the anode electrode 5 is composed of, for example, a metal film on which titanium, nickel, palladium and silver are sequentially deposited.
  • the anode electrode 5 is formed on the other main surface of the semiconductor substrate 2.
  • an n_ type semiconductor region (second semiconductor region 7) and a p + type semiconductor substrate 2 are formed by an epitaxial growth method, a thermal diffusion method, or the like.
  • An n + type semiconductor region (third semiconductor region 8) is formed.
  • the portion of the semiconductor substrate 2 excluding the second semiconductor region 7 and the third semiconductor region 8 constitutes the first semiconductor region 6.
  • the thicknesses of the first semiconductor region 6, the second semiconductor region 7, and the third semiconductor region 8 are 100 // ⁇ , 40 m, and ⁇ ⁇ ⁇ , respectively.
  • an aluminum film '11 is formed on one main surface of the semiconductor substrate 2 by vacuum evaporation or the like.
  • This aluminum film 11 constitutes a force source electrode 4 to be formed later.
  • the thickness of aluminum film 11 is set to 8 ⁇ m.
  • the aluminum film 12 is for preventing the other main surface of the first semiconductor region 6 from being contaminated when a tape member described later is attached to the other main surface of the first semiconductor region 6. is there.
  • the thickness of the aluminum film 12 is preferably about 1 // m to l0. In the present embodiment, the thickness is, for example, 2 ⁇ m.
  • an acid-resistant ink is printed on the aluminum film 11 using a screen technique using a nylon mesh mask or the like, thereby forming an etching mask on the aluminum film 11 as shown in FIG. 2 (c).
  • the etching mask 13 has an opening 13 a at a portion corresponding to a region where a mesa groove 9 is to be formed (a region where a mesa groove is to be formed). 3A is exposed through.
  • the opening 13. A is formed in the form of a stitch on the main surface of the semiconductor substrate 2 when viewed two-dimensionally. For this reason, the etching mask 13 is formed in an island shape on one main surface of the semiconductor substrate 2.
  • etching mask 13 As a mask, as shown in FIG. 2D, a portion of the aluminum film 11 corresponding to the opening 13a not covered with the etching mask 13 Is etched. That is, a portion of the aluminum film 11 corresponding to the region where the mesa groove is to be formed is removed. Aqua Regie was used as the etching solution for aluminum.
  • a tape member 14 is attached to the lower surface of the aluminum film 12 (the surface not in contact with the other main surface of the semiconductor substrate 2).
  • the etching mask 13 and the aluminum film 11 are used as masks.
  • the region where the mesa groove is to be formed is etched through the opening 13a to form a mesa groove 9 having a U-shaped cross section as shown in FIG. 2 (e).
  • the mesa groove 9 is formed in an annular shape along the outer peripheral edge of the semiconductor substrate 2 when viewed in plan.
  • a mixed solution of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid was used as an etching solution.
  • the depth of the mesa groove 9 is set to 1605 / zm.
  • the third semiconductor region 8, the second semiconductor region 7, the first semiconductor region 6, and the pn junction between the second semiconductor region 7 and the first semiconductor region 6 are exposed on the side surfaces of the mesa groove 9.
  • the first semiconductor region 6 having a thickness of 80 m remains on the bottom surface of the mesa groove 9.
  • the portion of the aluminum film 11 shown in FIG. Is removed by etching so that the edge of the aluminum film 11 and the edge of the mesa groove 9 are aligned in a cross section as shown in FIG. 2 (f).
  • the etching mask 13 formed on the force source electrode 4 is removed.
  • the tape member 14 attached to the lower surface of the aluminum film 12 is removed.
  • the protective film 3 is formed so as to cover the inner surface of the mesa groove 9. If, for example, a polyimide resin is used as the material of the protective film 3, the protective film 3 can be formed at a temperature of about 200 ° C. to 500 ° C.
  • a fluid polyimide resin is applied to the inner surface of the mesa groove 9 using a dispenser type applicator or the like.
  • the resin is subjected to a heat treatment at 350 ° C. for 60 minutes for 20 minutes.
  • the polyimide-based resin is heat-treated at a temperature of about 200 ° C. to 500 ° C. to evaporate a solvent contained in the resin and promote imide bond of the resin, thereby obtaining a relatively hard and dense resin.
  • a film (protective film 3) is formed.
  • the surface of the aluminum film 11 is lightly etched to form a force source electrode 4 composed of the aluminum film 11.
  • the aluminum film 12 is removed, and titanium, nickel, palladium and silver are sequentially vacuum-deposited on the other main surface of the semiconductor substrate 2 to form the anode electrode 5.
  • the semiconductor substrate 2 is formed along the mesa groove 9. Dicing.
  • the mesa diode 1 of the present embodiment is formed.
  • semiconductor substrate 2 is etched using aluminum film 11 as a mask, and A groove 9 is formed. This eliminates the need to repeat a plurality of etching steps as in the prior art, in order to form the protective film 3 and the cathode electrode 4.
  • the protective film 3 is formed after the aluminum film 11 is formed, there is a problem that the protective film 3 remains on the edge of the region where the force source electrode is to be formed as in the related art. Will not occur. Since the aluminum film 11 can be formed first, the edge of the aluminum film 11 and the edge of the mesa groove 9 are easily aligned by etching as described above. For this reason, in the present embodiment, etching for forming the force sword electrode 4 can be performed more accurately than in the conventional technique.
  • protective film 3 covering mesa groove 9 is formed by heat at a temperature lower than the temperature at which aluminum film 11 constituting force source electrode 4 deteriorates. For this reason, in the present embodiment, the heat hardly causes substantial damage to the aluminum film 11.
  • the present invention is not limited to the above-described embodiment, and various modifications and applications are possible.
  • the temperature at which the metal film forming the force source electrode 4 is degraded by heat has been described by taking the melting point as an example.
  • the temperature at which the metal film is degraded by heat is not limited to the melting point, but may be any temperature that substantially changes the properties (eg, resistivity) of the metal film.
  • the material is not limited to this, and any material may be used as the material of the protective film 3 as long as the material of the force source electrode 4 can be formed at a temperature lower than the temperature at which the film quality of the material changes. That is, if the material of the protective film 3 can be heat-treated at a temperature that does not cause substantial damage to the material constituting the force source electrode 4, Anything is fine. In this case, the material forming the protective film 3 may be appropriately changed depending on the material forming the force source electrode 4.
  • the case where the tape member 14 (and the aluminum film 12) is formed on the other main surface of the first semiconductor region 6 has been described as an example, but the tape member 14 (and the aluminum film 1 2) need not be formed.
  • the manufacturing process of the mesa-type diode 1 can be simplified as compared with the above-described embodiment, and a mesa-type diode with further improved productivity can be provided.
  • the case where the polyimide resin is applied to the mesa groove 9 using the dispenser type applicator has been described as an example, but the present invention is not limited to this, and various methods may be used. A polyimide resin may be applied to the mesa groove 9 without any problem.
  • the semiconductor element of the above embodiment is not limited to the mesa diode, but may be any other mesa semiconductor element such as a mesa transistor.
  • the mesa transistor may have the configuration shown in FIG. 3, for example.
  • the illustrated mesa transistor la has the same configuration as that shown in FIG. 1 except for the p-type semiconductor region 21 and the n-type semiconductor region 22.
  • the aluminum film 11 constituting the cathode electrode 4 is formed on one main surface of the semiconductor substrate 2 by vacuum evaporation.
  • the present invention is not limited to this.
  • the aluminum film 11 may be formed on one main surface of the semiconductor substrate 2 by sputtering.
  • the present invention can be used for a mesa type semiconductor device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne une diode mésa (1) comprenant un substrat semi-conducteur (2), un film de protection (3), une électrode cathode (4) et une électrode anode (5). Une rainure mésa (9) est formée dans une face principale du substrat semi-conducteur (2) par gravure au moyen d'un film métallique constituant l'électrode cathode (4) sous forme de masque. La rainure mésa (9) est formée en anneau le long du bord du substrat semi-conducteur (2). Le film de protection (3) est constitué d'une résine de polyamide fluide se volatilisant à une température inférieure au point de fusion du matériau constituant l'électrode cathode (4) qui durcit et recouvre le fond et les côtés de la rainure mésa (9). L'électrode cathode (4) est formée sur une face principale du substrat semi-conducteur (2), l'électrode anode (5) étant formée sur l'autre face principale du substrat semi-conducteur (2).
PCT/JP2003/002787 2002-03-08 2003-03-10 Dispositif a semi-conducteur et son procede de fabrication WO2003077306A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003575416A JPWO2003077306A1 (ja) 2002-03-08 2003-03-10 半導体素子及びその製造方法

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JP2002063173 2002-03-08
JP2002-63173 2002-03-08

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WO2003077306A1 true WO2003077306A1 (fr) 2003-09-18

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2360727A1 (fr) * 2008-11-19 2011-08-24 Showa Denko K.K. Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
US8362595B2 (en) 2007-12-21 2013-01-29 Sanyo Semiconductor Co., Ltd. Mesa semiconductor device and method of manufacturing the same
US8368181B2 (en) 2007-12-25 2013-02-05 Sanyo Semiconductor Co., Ltd. Mesa semiconductor device and method of manufacturing the same
US8426949B2 (en) 2008-01-29 2013-04-23 Sanyo Semiconductor Manufacturing Co., Ltd. Mesa type semiconductor device
JP2014192500A (ja) * 2013-03-28 2014-10-06 Shindengen Electric Mfg Co Ltd メサ型半導体装置の製造方法
US20140346642A1 (en) * 2011-09-06 2014-11-27 Vishay Semiconductor Gmbh Surface mountable electronic component

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122755B (zh) * 2017-12-21 2020-10-13 杭州赛晶电子有限公司 切槽蚀刻锥形正台面硅芯及硅二极管的制备方法

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Publication number Priority date Publication date Assignee Title
JPS5067590A (fr) * 1973-10-15 1975-06-06
JPS52139376A (en) * 1976-05-18 1977-11-21 Toshiba Corp Production of semiconductor device
JPS5565481A (en) * 1978-11-13 1980-05-16 Toshiba Corp Manufacture of high-frequency diode
JPS57167685A (en) * 1981-04-08 1982-10-15 Rohm Co Ltd Manufacture of diode
JP2001110799A (ja) * 1999-10-04 2001-04-20 Sanken Electric Co Ltd 半導体素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5067590A (fr) * 1973-10-15 1975-06-06
JPS52139376A (en) * 1976-05-18 1977-11-21 Toshiba Corp Production of semiconductor device
JPS5565481A (en) * 1978-11-13 1980-05-16 Toshiba Corp Manufacture of high-frequency diode
JPS57167685A (en) * 1981-04-08 1982-10-15 Rohm Co Ltd Manufacture of diode
JP2001110799A (ja) * 1999-10-04 2001-04-20 Sanken Electric Co Ltd 半導体素子及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8362595B2 (en) 2007-12-21 2013-01-29 Sanyo Semiconductor Co., Ltd. Mesa semiconductor device and method of manufacturing the same
US8368181B2 (en) 2007-12-25 2013-02-05 Sanyo Semiconductor Co., Ltd. Mesa semiconductor device and method of manufacturing the same
US8426949B2 (en) 2008-01-29 2013-04-23 Sanyo Semiconductor Manufacturing Co., Ltd. Mesa type semiconductor device
EP2360727A1 (fr) * 2008-11-19 2011-08-24 Showa Denko K.K. Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
EP2360727A4 (fr) * 2008-11-19 2012-11-21 Showa Denko Kk Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
KR101273108B1 (ko) 2008-11-19 2013-06-13 쇼와 덴코 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
US8637872B2 (en) 2008-11-19 2014-01-28 Showa Denko K.K. Semiconductor device and method of manufacturing semiconductor device
US20140346642A1 (en) * 2011-09-06 2014-11-27 Vishay Semiconductor Gmbh Surface mountable electronic component
US10629485B2 (en) * 2011-09-06 2020-04-21 Vishay Semiconductor Gmbh Surface mountable electronic component
JP2014192500A (ja) * 2013-03-28 2014-10-06 Shindengen Electric Mfg Co Ltd メサ型半導体装置の製造方法

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TWI241028B (en) 2005-10-01
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