WO2003052804A1 - Appareil porte-substrat, appareil d'exposition et procede de production d'un dispositif - Google Patents

Appareil porte-substrat, appareil d'exposition et procede de production d'un dispositif Download PDF

Info

Publication number
WO2003052804A1
WO2003052804A1 PCT/JP2002/013180 JP0213180W WO03052804A1 WO 2003052804 A1 WO2003052804 A1 WO 2003052804A1 JP 0213180 W JP0213180 W JP 0213180W WO 03052804 A1 WO03052804 A1 WO 03052804A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
wafer
substrate holding
holding device
exposure apparatus
Prior art date
Application number
PCT/JP2002/013180
Other languages
English (en)
Japanese (ja)
Inventor
Makoto Kondo
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2003553607A priority Critical patent/JPWO2003052804A1/ja
Priority to AU2002354196A priority patent/AU2002354196A1/en
Publication of WO2003052804A1 publication Critical patent/WO2003052804A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Definitions

  • the present invention relates to a substrate holding device, an exposure device, and a device manufacturing method, and more particularly, to a substrate holding device for holding a flat substrate, an exposure device including the substrate holding device as a holding device for a substrate to be exposed, and The present invention relates to a device manufacturing method using the exposure apparatus.
  • a resist or the like is applied to a pattern formed on a mask or a reticle (hereinafter collectively referred to as “reticle J”) via a projection optical system.
  • Exposure devices that transfer onto a wafer or a substrate such as a glass plate (hereinafter collectively referred to as “wafer J”) are used.
  • wafer J Exposure devices that transfer onto a wafer or a substrate such as a glass plate
  • a step-and-scan type scanning projection exposure apparatus (so-called scanning scanning exposure apparatus), which is an improved version of this stepper, is a step-and-scan type projection exposure apparatus such as a step-and-scan type scanning projection exposure apparatus. It has become mainstream.
  • a wafer stage movable in a two-dimensional plane is provided, and a wafer is held by vacuum suction or electrostatic suction by a wafer holder fixed on the wafer stage.
  • a scanning stepper also called a scanner
  • the exposure wavelength of such a projection exposure apparatus is 193 nm.
  • F 2 laser having a wavelength of 1 5 7 nm is said to be good candidates for the light source of the projection exposure apparatus of next generation.
  • the present invention has been made under such circumstances, and a first object of the present invention is to provide a substrate holding device capable of reliably suppressing irregularities on the surface of a substrate to be held.
  • a second object of the present invention is to provide an exposure apparatus capable of suppressing color unevenness due to defocus and improving exposure accuracy.
  • a third object of the present invention is to improve the productivity of highly integrated devices. To provide a device manufacturing method. Disclosure of the invention
  • a substrate holding device for holding a flat substrate, wherein the substrate holding surface is disposed within a region having a predetermined area, and supports the substrate from below with respective tips.
  • a plurality of protruding support members forming a plurality of; a plurality of drive elements provided respectively corresponding to a plurality of divided regions obtained by dividing the region so as to include a plurality of the support members, respectively;
  • the plurality of drive elements constituting each block that has been previously blocked so as to have a predetermined correspondence with the plurality of divided areas are formed by changing the shape of the substrate support surface in the corresponding divided area.
  • a driving device that can be driven simultaneously and individually in order to change the substrate holding device.
  • a plurality of drive elements are respectively provided corresponding to each divided region obtained by dividing a region of a predetermined area in which a plurality of projecting support members are arranged so as to include a plurality of support members.
  • a plurality is provided.
  • the driving device stores a plurality of driving elements constituting each block, which are pre-blocked so as to have a predetermined correspondence relationship with the plurality of divided areas, in the corresponding divided areas. In order to change the shape of the substrate support surface, it is possible to simultaneously and individually drive.
  • the driving device may be configured so that a plurality of driving elements constituting each block can be driven simultaneously and individually with respect to all blocks that have been divided into blocks in advance, or at least one arbitrary block is selected and selected.
  • a configuration may be employed in which a plurality of drive elements constituting a block can be driven simultaneously and individually.
  • At least one target driving element In the divided area corresponding to the block the unevenness on the surface of the substrate supported by the support member can be reliably suppressed.
  • each of the divided areas and each of the blocks may be in a one-to-one correspondence.
  • a plurality of the driving elements may be arranged at least along one direction corresponding to each of the divided regions.
  • the blocks of the plurality of driving elements include: It is possible to include a plurality of specific blocks composed of mxn drive element groups arranged in a matrix in ⁇ columns.
  • the driving device may select mxn switches provided corresponding to each of the driving elements constituting each of the specific blocks from one of m first signal lines. Turns on and off individually using a combination of a first signal input via a signal line and a second signal input via one signal line selected from n second signal lines Thus, the mxn driving elements can be individually driven.
  • the driving device can switch a block of a driving element to be driven according to an external command.
  • the driving element can be a driving element that generates distortion according to an applied voltage.
  • the driving element can be a piezoelectric element.
  • the substrate holding device further includes a convex portion disposed outside the region, surrounding the region, and supporting the substrate together with the plurality of support members while maintaining substantially flatness of the substrate. can do.
  • an adsorption mechanism for adsorbing the substrate to a tip end portion of each of the plurality of support members and an upper end portion of the projection. Wear.
  • the suction mechanism may be an electrostatic suction mechanism, or may be a vacuum suction mechanism for vacuum-suctioning a gas in a space inside the protrusion.
  • the substrate holding device of the present invention may further include a temperature adjusting device for adjusting at least a part of the temperature of the plurality of driving elements and the driving device.
  • a temperature adjusting device for adjusting at least a part of the temperature of the plurality of driving elements and the driving device.
  • an exposure apparatus that irradiates an energy beam onto a mask on which a pattern is formed, and transfers the pattern onto a substrate via a projection optical system.
  • a focus position detection system for detecting position information in the optical axis direction of the projection optical system at a plurality of points on the substrate surface held by the substrate holding device; and taking into account detection results of the focus position detection system
  • a controller for controlling the driving device to selectively drive the plurality of driving elements in order to adjust the shape of the substrate surface held by the substrate holding device.
  • At least one driving element selected from the plurality of driving elements is driven by the control device via the driving device based on the detection result of the focal position detection system, and the shape of the substrate surface is Is adjusted. Therefore, during exposure, the entire projection area on the substrate surface is adjusted by adjusting the distortion of the driving element in the area (projection area) where the pattern of the mask is projected by the projection optical system. It is possible to suppress the focus within the range of the depth of focus. Therefore, according to the present invention, it is possible to suppress color unevenness due to defocus and improve exposure accuracy.
  • control device may further include a drive system that drives a portion of the substrate holding device on which the substrate is mounted, in at least one of the optical axis direction and a tilt direction with respect to a plane orthogonal to the optical axis direction. May control the drive system based on the detection result of the focus position detection system.
  • control device may control the driving device further considering image plane distortion information of the projection optical system.
  • the first exposure apparatus of the present invention may further include a scanning device that scans the energy beam in a scanning direction in synchronization with the mask and the substrate. That is, the first exposure apparatus of the present invention can be a scanning exposure apparatus.
  • control device may correct at least the shape of the substrate surface in a non-scanning direction orthogonal to the scanning direction in an irradiation area of the substrate surface irradiated with the energy beam.
  • the control device when the scanning device is provided, the control device considers a detection result of the focus position detection system during scanning of the mask and the substrate by the scanning device. Correcting the shape of the substrate surface so that the substrate surface is within the range of the depth of focus of the projection optical system over substantially the entire irradiation area of the substrate surface irradiated with the energy beam;
  • the driving device can be controlled.
  • control device corrects the shape of the substrate surface in consideration of the detection result of the focal position detection system at any time before the energy beam is irradiated on the substrate. Control of the driving device for this purpose.
  • the energy beam may have a wavelength capable of transferring a pattern.
  • the energy beam is a vacuum ultraviolet light having a wavelength of 180 nm or less. be able to.
  • an exposure apparatus that irradiates an energy beam onto a mask and transfers a pattern of the mask onto a substrate via a projection optical system.
  • a scanning device that moves the substrate relative to the energy beam passing through the projection optical system in synchronization with the movement;
  • a detecting device for detecting positional information on the substrate surface; a plurality of projecting support members for supporting the substrate; and a predetermined area on the substrate to which the pattern is transferred by synchronous movement of the mask and the substrate.
  • a substrate holding device having at least a plurality of driving elements provided corresponding to a plurality of divided regions divided in a non-scanning direction intersecting a scanning direction in which the substrate is moved; and a detection result of the detection device.
  • a driving device for driving at least one of the plurality of driving elements in order to adjust a surface position of the substrate in at least a part of the predetermined region in accordance with the second exposure apparatus.
  • a plurality of projecting support members for supporting the substrate, and a plurality of predetermined regions on the substrate to which the pattern is transferred by synchronous movement of the mask and the substrate are divided at least in the non-scanning direction.
  • a substrate holding device having a plurality of driving elements provided corresponding to the divided areas. Further, position information on the surface of the substrate held by the holding device is detected by a detecting device.
  • the driving device drives at least one of the plurality of driving elements in order to adjust a surface position of the substrate in at least a part of the predetermined region according to a detection result of the detection device.
  • the surface shape of the substrate in the non-scanning direction can be adjusted to a desired shape, and as a result, the substrate surface in a predetermined area on the substrate on which the pattern is transferred to the image forming plane of the projection optical system can be matched.
  • This enables high-precision exposure without defocus.
  • correction of unevenness in the non-scanning direction of the substrate is highly important.
  • the present invention can be said to be a device manufacturing method using the exposure apparatus of the present invention.
  • FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to one embodiment of the present invention.
  • FIG. 2 is a plan view showing the wafer holder of FIG. 1 and a supply / exhaust mechanism connected to the wafer holder.
  • FIG. 3 is a plan view showing the relationship between the pin arrangement of the wafer holder of FIG. 2 and the shot area on the wafer.
  • FIG. 4A is a plan view showing a portion corresponding to one shot area SA in FIG. 3, and FIG. 4B is a cross-sectional view of a wafer holder portion corresponding to a cross section taken along line BB shown in FIG. 4A.
  • FIG. 4C is a diagram showing a state after the piezoelectric element is driven from the state of FIG. 4B.
  • FIG. 5 is a diagram showing a positional relationship between an exposure area and a focus sensor.
  • FIG. 6 is a diagram showing an example of an arrangement of MXN piezoelectric elements constituting an intermediate layer of a wafer holder.
  • FIG. 7 is a diagram schematically showing an internal configuration of a driving device for driving a piezoelectric element.
  • FIG. 8 is a diagram illustrating an example of a configuration of one drive circuit in FIG.
  • FIG. 9 is a diagram showing an example of the configuration of the switch circuit of FIG.
  • Figure 10 shows the inputs (0, 1) to the signal lines of group X (X1, X2) and group Y (Y1,, 2, ⁇ 3, ⁇ 4) and AND circuits GT1 to GT8 in Fig. 9.
  • 5 is a truth table showing the relationship between the output (0, 1) and.
  • FIG. 11 is a timing chart of signal transmission for driving the piezoelectric elements Pij to Pij + 3 .
  • FIG. 12 is a flowchart for explaining an embodiment of the device manufacturing method according to the present invention.
  • FIG. 13 is a flowchart showing details of step 204 in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • the exposure apparatus 100 is a step-and-scan type projection exposure apparatus.
  • the exposure apparatus 100 includes an illumination system 100, a reticle stage RST for holding a reticle R as a mask, a projection optical system PL, a stage apparatus 50 on which a wafer W as a substrate is mounted, and a control system thereof. Etc. are provided.
  • the illumination system 10 includes a light source, as disclosed in, for example, Japanese Patent Application Laid-Open No. 6-349701 and the corresponding US Pat. No. 5,534,970.
  • Illumination uniformizing optical system including optical ⁇ integrator (fly-eye lens, rod integrator (internal reflection type integrator) or diffractive optical element, etc.), relay lens, variable ND filter, variable field stop (reticle) And a dichroic mirror and the like (both not shown).
  • a slit-shaped illumination area defined by a reticle plume on a reticle R on which a circuit pattern or the like is drawn is illuminated with illumination light IL as an energy beam with substantially uniform illuminance.
  • illumination light I teeth K r F excimer laser beam (wavelength 2 4 8 nm) far ultraviolet light such as, A r F excimer laser beam (wavelength 1 9 3 nm), or F 2 laser beam (wavelength Vacuum ultraviolet light such as (157 nm) is used. It is also possible to use ultraviolet emission lines (g-line, i-line, etc.) from an ultra-high pressure mercury lamp as the illumination light I.
  • a reticle On the reticle stage RST, a reticle is fixed, for example, by vacuum suction.
  • the reticle stage RST is minutely driven in an XY plane perpendicular to the optical axis of the illumination system 10 (coincident with the optical axis AX of the projection optical system PL described later) by a reticle stage drive unit 14 including, for example, a linear motor. Possible and It can be driven at a specified scanning speed in a predetermined scanning direction (here, the Y-axis direction).
  • the position of the reticle stage RST within the stage movement plane is determined by a reticle laser interferometer (hereinafter referred to as a “reticle interferometer”) 16 through a movable mirror 15 with a resolution of, for example, about 0.5 to 1 nm. Always detected.
  • the position information of the reticle stage R ST from the reticle interferometer 16 is supplied to a stage controller 19 and a main controller 20 as a controller via the stage controller 19.
  • the stage control device 19 controls the drive of the reticle stage R ST via the reticle stage drive section 14 based on the position information of the reticle stage R ST in response to an instruction from the main control device 20.
  • the end surface of reticle stage RST may be mirror-finished to form a reflecting surface (corresponding to the reflecting surface of movable mirror 15).
  • the projection optical system PL is disposed below the reticle stage RST in FIG. 1, and the direction of the optical axis AX is the Z-axis direction.
  • the projection optical system PL for example, a refracting optical system which is telecentric on both sides and has a predetermined reduction magnification (for example, 14 or 1Z5) is used. Therefore, when the illumination area IL of the reticle R is illuminated by the illumination light IL from the illumination system 10, the illumination light IL passing through the reticle R causes the illumination light IL of the reticle R in the illumination area to pass through the projection optical system PL.
  • a reduced image (partially inverted image) of the circuit pattern is formed on wafer W having a surface coated with a resist (photosensitive agent).
  • the stage device 50 includes a wafer stage WST, a wafer holder 70 provided on the wafer stage WST, a wafer stage drive unit 24 for driving the wafer stage WST and the wafer holder 70, and the like.
  • the wafer stage WST is arranged on a base (not shown) below the projection optical system PL in FIG. 1 and is driven in the XY direction by a linear motor (not shown) constituting the wafer stage drive unit 24.
  • the above-described wafer holder 70 for holding the wafer W is mounted on the tilt stage 30.
  • the wafer holder 70 is mainly composed of a three-layer structure. As shown in the plan view of FIG. 2, the member 22 constituting the uppermost layer of the wafer holder 70 has a circular plate-like base portion 26 and an upper surface of the base portion 26 (in front of the paper surface in FIG. 2). Projecting pins 32, 32, 32 as a plurality of support members provided at predetermined intervals in an area having a predetermined area in the center except for an annular area having a predetermined width in the vicinity of the outer peripheral portion of the side surface). An annular convex portion (hereinafter, referred to as a “rim portion”) 28 provided near the outer peripheral edge in a state surrounding the region where the plurality of pins 32 are arranged is provided.
  • rim portion annular convex portion
  • the member 22 is made of a material having a low expansion coefficient, for example, a material having a certain degree of elasticity, such as ceramics, and is formed into a circular plate-like shape forming a bottom portion by etching the surface of a material such as a disc-shaped ceramic as a whole.
  • the base 26, a rim 28 protruding from the upper surface of the base 26, and a plurality of pins 32 are integrally formed.
  • FIG. 3 is an enlarged view of the wafer holder 70 and specifically shows the arrangement of the pins 32 and the rim portion 28.
  • the outer diameter of the rim portion 28 is set slightly smaller than the outer diameter of the wafer W (shown by a two-dot chain line (imaginary line)).
  • the upper surface is processed horizontally and flatly so that no gap is formed between the upper surface and the rear surface of the wafer W when the wafer W is mounted.
  • the portion has a protruding shape so as to be located substantially on the same plane as the rim portion 28.
  • the pins 32 are arranged on the upper surface of the base portion 26 at predetermined intervals. In FIG.
  • FIG. 4A shows a portion corresponding to one of the shot areas SA.
  • FIG. 4B is a cross-sectional view of the wafer holder 70 corresponding to the cross section taken along line BB shown in FIG. 4A.
  • each of four divided areas SS An to SSA 4 arranged in the vertical direction (scanning direction) in the shot area SA is an illumination area on the wafer W to which the illumination light IL is irradiated (the projection optical system).
  • the PL has the same size and shape as the exposure area IA (see Fig. 5) conjugate to the above-mentioned illumination area.
  • the exposure area IA is, for example, a rectangular area of 8 mm ⁇ 25 mm.
  • each divided area obtained by dividing the divided area SSA into eight four in the non-scanning direction and two in the scanning direction).
  • Piezoelectric elements P as drive elements are arranged corresponding to the regions SS Bi SSBs, respectively, and these piezoelectric elements P form a second layer as an intermediate layer.
  • Internal electrodes 23 made of palladium (AgPd) alloy are alternately stacked.
  • the thickness of the piezoelectric element P is defined by the required driving amount, a thickness of 1 0 4 times the drive amount.
  • the required driving amount is determined based on the flatness of the wafer and the depth of focus of the projection optical system PL. For example, if the required driving amount is 0.1 jtim, the thickness of the piezoelectric element is 1 mm.
  • the thickness of the piezoelectric element is 2 mm.
  • two 1 mm piezoelectric elements may be stacked, or a 2 mm thick piezoelectric element may be used.
  • a single piezoelectric element may be used.
  • the material used as the piezoelectric element P is not limited to the above, it is also generally BaTi0 3 is used as a piezoelectric element material, PbTiOss (NaK) be used as NbOs ferroelectric such.
  • the thickness of the entire wafer holder 70 including the piezoelectric element is 15 to 20 mm. It has become about.
  • a large number of internal electrodes 23 of each piezoelectric element P are alternately taken out on both end faces every other layer, and connected to individual end face electrodes (not shown) made of, for example, an AgPd alloy formed on both end faces.
  • One end face electrode of each piezoelectric element P is connected to an amplifier (AMP) described later via a conduction processing material (wiring member) (not shown), and the other end face electrode is connected to a common electrode (not shown). They are connected via a conduction material (wiring member).
  • AMP amplifier
  • AMP conduction processing material
  • a common electrode not shown
  • the specific configuration of the driving device for driving each piezoelectric element P will be described later.
  • Each of the piezoelectric elements P is fixed in a matrix arrangement on a base member 42 constituting a third layer (lowest layer).
  • a second layer composed of a large number of piezoelectric elements P is formed on the base member 42, and the base portion 26 and the pins are formed thereon in advance as described above.
  • a member 22 integrally formed with 32 and the rim portion 28 is fixed in a predetermined positional relationship.
  • the members of the adjacent layers are joined by, for example, an adhesive.
  • the upper end surfaces of the plurality of pins 32 and the upper surface of the rim portion 28, which are the contact surfaces with the wafer W are polished using a polishing device, abrasive grains, or the like.
  • the upper end surfaces of the plurality of pins 32 and the upper surface of the rim portion 28 are located substantially on the same plane.
  • three through holes (not shown) in the vertical direction are provided at the positions of the vertices of a substantially regular triangle. 2. It is formed without mechanical interference with the piezoelectric element P. Vertically moving pins (center-up) 34 a, 34 b, 34 c having a cylindrical shape are inserted into each of these through holes. These three center-ups 34 a-34 c are shown in FIG.
  • the wafer stage drive unit 24 is vertically moved (moved up and down) by the same amount in the vertical direction (Z-axis direction) at the same time via a vertical movement mechanism (not shown) constituting the wafer stage drive unit 24.
  • center up 34 to 34 By being driven by the vertical movement mechanism, the wafer W can be supported from below by the three center-ups 34a to 34c, or can be vertically moved while the wafer W is supported. It is like that.
  • a plurality of air supply / exhaust ports 36 are provided on the upper surface of the base portion 26 in the radial direction (almost 120 ° central angle) from near the center of the upper surface of the base portion 26. (In the direction of three radial lines having an interval) at predetermined intervals. These supply / exhaust ports 36 are also formed at positions that do not mechanically interfere with the pins 32.
  • the air supply / exhaust ports 36 are respectively connected to air supply / exhaust passages 38 A, 38 B, 38 C formed inside the base member 42 via pipes provided at positions not interfering with the piezoelectric element P.
  • These supply / exhaust passages 38 A, 38 B, 38 C are connected to the outer peripheral surface of the base member 42. It is in communication with 4Ob and 40c.
  • the wafer W placed on the wafer holder 70 and supported from below by the plurality of pins 32 and the rim portion 28 is placed on the wafer holder 70 configured as described above.
  • a cooling mechanism 72 is connected as a temperature adjusting device for adjusting at least a part of the temperature.
  • the air supply / exhaust mechanism 80 includes a first vacuum pump 46 A, a vacuum chamber 46 Ba and a second vacuum pump 46 Bb, an air supply device 46 C, and a first vacuum pump 46 A, a vacuum chamber 46 Ba and a second vacuum pump 46 Bb, and a supply / exhaust pipe 40 for connecting an air supply device 46 C to the supply / exhaust passages 38 A to 38 C, respectively. I have.
  • the supply / exhaust pipe 40 includes a supply / exhaust main pipe 40d, and the aforementioned supply / exhaust branch pipes 40a, 40b, 40c branched into three from one end of the supply / exhaust main pipe 40d. And a first exhaust branch pipe 40e, a second exhaust branch pipe 40f, and an air supply branch pipe 40g branched into three from the other end of the supply / exhaust main pipe 40d.
  • a first vacuum pump 46 A is connected to an end of the first exhaust branch pipe 40 e opposite to the supply / exhaust main pipe 40 d via a solenoid valve (electromagnetic valve) V 1.
  • One end of the vacuum chamber 46 Ba is connected via an electromagnetic valve V2 to an end of the second exhaust branch pipe 40f opposite to the supply / exhaust main pipe 40d.
  • the other side of the vacuum chamber 46Ba is connected to a second vacuum pump 46Bb.
  • An air supply device 46C is connected to an end of the air supply branch pipe 40g opposite to the supply / exhaust air main pipe 40d via
  • a barometer for measuring the air pressure inside the supply / exhaust pipe 40 is connected to a part of the supply / exhaust main pipe 40d.
  • the value measured by the barometer is supplied to the main controller 20 shown in FIG. 1, and the main controller 20 controls each electromagnetic sensor based on the value measured by the barometer and the control information for loading and unloading the wafer. It controls the opening and closing of valves V1 to V3 and the operation of vacuum pumps 46A, 46Bb and air supply device 46C. Note that these operations will be described in further detail later.
  • a vacuum suction mechanism is configured as the suction mechanism.
  • a pipe line is formed directly in the wafer holder 70, and a cooling liquid is supplied to the pipe line to cool the wafer holder (mainly, a plurality of piezoelectric elements P and its driving device).
  • the elements are arranged on the back of the base member 42 that constitutes the wafer holder 70, and the heat generated by the plurality of piezoelectric elements P and its driving device due to the Velch I element etc. is transferred from the back of the wafer holder 70 to the outside.
  • a configuration that wastes heat can be adopted.
  • the base member 42 is formed of a high heat conductive material, and a heat sink is arranged on the back side of the base member 42 to transfer the heat generated by the plurality of piezoelectric elements P and the driving device thereof to the wafer holder 70. Absorbed on the back side of the It is also possible to adopt a configuration in which waste heat is discharged to the outside via a heat sink.
  • the XY stage 31 performs scanning exposure by not only moving in the scanning direction (Y-axis direction) but also moving a plurality of shot areas on the wafer W relative to the exposure area IA. It is configured to be able to move in the non-scanning direction (X-axis direction) orthogonal to the scanning direction so as to perform scanning (scanning) exposure of each shot area on the wafer W, The step 'and' scan operation is repeated in which the operation of moving to the acceleration start position for exposure is repeated.
  • the position of the wafer stage WST in the XY plane is adjusted via the moving mirror 17 provided on the top surface of the Z ⁇ tilt stage 30 through the wafer laser interferometer system. As a result, for example, it is always detected with a resolution of about 0.5 to 1 nm.
  • a Y moving mirror 17 Y having a reflecting surface orthogonal to the scanning direction (Y-axis direction) is placed on the Z ⁇ tilt stage 30.
  • An X-moving mirror 17 X having a reflecting surface orthogonal to the scanning direction (X-axis direction) is provided.
  • the wafer laser interferometer system 18 also transmits the interferometer beam perpendicular to the Y-moving mirror 17 Y.
  • the Y interferometer and the X interferometer of the wafer laser interferometer system 18 are multi-axis interferometers having a plurality of measuring axes, and the wafer stage WST (more precisely, Z 3 0) rotations (0 z rotations (zeroing), 0 y rotations around the Y axis (pitching), and SX rotations around the X axis (rolling)) are also measured. .
  • the X, Y moving mirrors 17 X and 17 Y may be Z Z or a mirror formed on a member different from the tilt stage 30 and fixed to the Z stage 30 or Z ⁇
  • a reflecting surface may be formed on the end surface (side surface) of the tilt stage 30.
  • the position information (or speed information) of the wafer stage WST is stored in the stage controller 19, And is supplied to the main controller 20 via this.
  • the stage controller 19 controls the wafer stage WST via the wafer stage drive unit 24 based on the position information (or speed information) of the wafer stage WST in accordance with an instruction from the main controller 20.
  • the exposure apparatus 100 of the present embodiment has a light source whose on / off is controlled by the main controller 20, and has a large number of pinholes directed toward the image forming plane of the projection optical system PL.
  • an irradiation system 60a for irradiating an image forming light beam for forming a slit image from an oblique direction with respect to the optical axis AX, and a light receiving system for receiving the image forming light beam reflected by the wafer W surface.
  • a focal position detection system composed of an oblique incidence type multi-point focal position detection system consisting of 60b is provided.
  • a pattern in which a slit-shaped opening pattern is formed in a matrix-like arrangement of 4 rows and 4 columns inside an irradiation system 60a constituting a multipoint focal position detection system Plates are provided, and imaging light beams emitted from the respective aperture patterns are formed on the surface of the wafer W as slit images Su S "in a 4-by-4 matrix arrangement as shown in FIG. Then, 4 ⁇ 4 light receiving elements capable of individually receiving the reflected light beams from these 16 slit images Su S ⁇ are provided in the light receiving system 60b.
  • the exposure area IA internal 2 X 4 pieces of focus sensor S 2 i ⁇ S 3 4 is a follow-up sensor used for focus leveling control of the wafer W, P Ranran 80
  • a total of eight focus sensors Sii ⁇ S 14, S 4 i ⁇ S 44 is a so-called pre-reading sensor.
  • the following odor Te is called focus sensor S 2 i ⁇ S 3 4 both tracking sensors, it is assumed that the focus sensor Sii ⁇ Si 4 and S 41 to S 44 is also referred to as a pre-reading sensor.
  • each focus sensor S that is, the photoelectric conversion signal from the light receiving element is supplied to the main controller 20 via a selection circuit and a signal processing circuit (not shown).
  • the signal processing circuit has a 12-channel signal output circuit, and the main controller 20 selects up to 12 focus sensors S from the 16 focus sensors S, A defocus amount at an image forming point of each slit image is calculated based on an output of each focus sensor S.
  • the stage controller 19 focuses on the basis of a defocus signal (defocus signal) from the light receiving system 60b, for example, an S-curve signal at the time of scanning exposure to be described later.
  • a defocus signal defocus signal
  • the tilt stage 30 and wafer holder 70 in the Z-axis direction via the wafer stage drive unit 24, and tilt them with respect to the XY plane (ie, rotation about the X axis 0 X times) so that the displacement is minimized. Rotation, rotation around the Y axis (0 y rotation).
  • a drive system is configured by the wafer stage drive unit 24 and the stage control device 19.
  • the plurality of piezoelectric elements P described above are provided, and the main control device 20 individually drives the piezoelectric elements P via the drive device 85 shown in FIG. This makes it possible to deal with such situations.
  • the middle layer of the wafer holder 70 is composed of MX N piezoelectric elements PII to PMN arranged as shown in FIG. 6, and MX N is a multiple of 8. There is.
  • the piezoelectric element blocks BL arranged in a matrix of 8 rows and 4 columns indicated by bold lines correspond to each shot area SA on the wafer W, and are arranged in the scanning direction in each block BL in 2 rows 4 rows.
  • Each of the four divided blocks including the piezoelectric elements P arranged in a matrix in a row corresponds to the irradiation area (exposure area) IA of the illumination light on the wafer W described above.
  • FIG. 7 shows a driving device 85 for driving the piezoelectric element group PU WPMN, together with the main control device 20.
  • the drive circuit 9 Oi is connected to the six signal lines X 1, X 2, Y 1, Y 2, Y 3, and Y 4 constituting the first bus BS 1 described above.
  • a switching circuit SW to which input terminals are connected, and eight digital-to-analog converters (DZA converters) DZAi to D /, each having an input terminal individually connected to eight output signal lines of the switching circuit SW. It includes a a 8, and eight amplifier AM Pi ⁇ AM P 8 individually connected to the output end of the eight DZA converter DZA i D / as.
  • a select signal is input to the switching circuit SW via a select signal output line S Li which is one of the 2k output signal lines of the select signal output circuit 92.
  • the switching circuit SW includes, for example, eight AND circuits GT 1 connected to six signal lines X 1, X 2, Y 1, Y 2, Y 3, and Y 4 in a connection relationship as shown in FIG. To GT 8 and eight AND circuits GT 9 to GT 16 each having one of the outputs of AND circuits GT 1 to GT 8 as one input.
  • the other inputs of the AND circuits GT9 to GT16 are select signals that are input via a select signal output line SLi.
  • the combination of “0” or “1” input to the signal lines of the X group and “0” or “1” input to the signal lines of the Y group causes Circuit is selected from GT1 to GT8, and the selected AND circuit is selected. Is “1 j” and the outputs of the other AND circuits are “0”. Specifically, if the signals input from each of the X group signal lines and the Y group signal lines are “1 j” with respect to the AND circuits GT 1 to GT 8, the output of the AND circuit Is set to “1”, and the outputs of the other AND circuits are set to “0”.
  • the DZA converters DZAi to DZA 8 also receive drive voltage data from the main controller 20 via the second bus BS2. Is entered.
  • the drive voltage data is taken in only the D / A converter of the DZA converter DZAi DZAs which is turned on by a signal from the switching circuit SW. That is, the DZA converter performs sampling in accordance with the ON signal from the switching circuit SW.
  • the drive circuit 90 ⁇ has the above-described configuration and is selected by the select signal SL1 (when the select signal S1 ⁇ is "1" (H level)), the drive circuit 90 ⁇ has two lines.
  • the output of the AND circuit GT 1 ⁇ GT 8 as a piezoelectric element P 11 ⁇ P 2 4 of 2 X 4 pieces of switches are found provided corresponding individually to each constituting the block (1, 0) determined individually
  • 2 ⁇ 4 piezoelectric elements ⁇ 24 are individually driven via a DZA converter and an amplifier.
  • each of the piezoelectric elements Pu Pw is driven in accordance with drive voltage data provided from the main controller 20 via the second bus BS2.
  • the select signal output circuit 92 sets the output signal to the designated drive circuit 90 based on the selection signal input from the main controller 20 via the signal line CS to “1” (H level). Output signals to other drive circuits
  • the designation (selection) of the drive circuit 9 ( ⁇ to 9 Oq by the main control device 20 is, for example, “0” input to each of the k signal lines CS or
  • the select signal output circuit 92 selectively outputs “1” to q drive circuits via 2k output signal lines.
  • the remaining driving circuits 902 to 90q are also configured in the same manner as the driving circuit 9Oi.
  • the solenoid valves V 1 to V 3 in FIG. 2 are all closed, and the air supply and exhaust operations by the air supply and exhaust mechanism 80 are off.
  • the stage controller 19 When the wafer W is transported above the wafer holder 70 by a wafer loader (not shown), the stage controller 19 is moved up through a vertical movement mechanism (not shown) under the instruction of the main controller 20. rise c.
  • the wafer W on the wafer loader is transferred to the center-ups 34a to 34c, and the wafer loader retreats from above the wafer holder 70.
  • the stage controller 19 moves the center up to 34a to 34c.
  • the wafer W is placed on the wafer holder 70 by descending.
  • the main control unit 20 opens the solenoid valve V 2 communicating with the high-speed exhaust vacuum chamber 46 Ba of FIG.
  • the gas in the space surrounded by the base part 26, the rim part 28, and the wafer W is sucked (exhausted) at high speed.
  • the suction pressure is increased to about 800 hPa, for example, by using the vacuum chamber 46 Ba (in a high vacuum state). You have set.
  • main controller 20 closes solenoid valve V2 in FIG. 2 and opens solenoid valve V1 communicating with first vacuum pump 46A, which is normally used. Thereafter, the rewe / W is sucked and held by the suction force of the first vacuum pump 46A.
  • the suction pressure of the normally used first vacuum pump 46 A is set to, for example, 1 to reduce the deformation of the wafer W due to vacuum suction. It is set as low as 6 6 ⁇ 5 h Pa to 1 33.2 Pa (low vacuum). Further, by making the suction pressure different between the case where the wafer W is placed on the wafer holder 70 and the case where other operations are performed, the time required for wafer loading can be reduced.
  • main controller 20 when unloading wafer W, main controller 20 first closes solenoid valve V1 in FIG. 2 and turns off the suction operation. Next, main controller 20 raises center-ups 34 a to 34 c by a predetermined amount, opens air supply valve V 3, and blows gas toward the bottom surface of wafer W. Thereby, the above-mentioned vacuum state is immediately released.
  • the pins 32 and rims 28 Is transferred to the center-ups 34a to 34c, the wafer unloader (not shown) enters the lower side of the wafer W, and the center-ups 34a to 34c descend. As a result, the wafer W is delivered from the center-up 34a to 34c to the wafer unloader. Then, the wafer unloader is retracted from above the wafer holder 70, thereby completing the wafer unloading.
  • the gas is blown to the bottom surface of the wafer, thereby shortening the unloading time of the wafer.
  • the wafer holder 70, the supply / exhaust mechanism 80, and the driving device 85 constitute a substrate holding device.
  • the illumination light IL vacuum ultraviolet light or the like
  • the gas on the optical path of the illumination light is highly transmissive to the illumination light such as a helm (the characteristic of absorbing the illumination light is lower than that of air or the like).
  • the gas blown to the bottom surface of the wafer be a gas having high transmittance of illumination light.
  • the amount of gas blown to the bottom surface of the wafer be very small so that the wafer does not float.
  • an exposure operation of a step-and-scan method is performed as follows.
  • the stage controller 19 based on the result of the wafer alignment under the direction of the main controller 20, sets the first shot area (first shot area) on the wafer W held on the tilt stage 30.
  • the wafer stage WST is moved via the wafer stage drive unit 24 to the acceleration start position for the exposure of (shot).
  • the stage controller 19 monitors the measured values of the reticle interferometer 16 and the wafer laser interferometer system 18 and communicates with the reticle stage RST via the reticle stage drive unit 14 and the wafer stage drive unit 24.
  • the reticle R (the reticle stage RST) is controlled by the reticle interferometer 16, the wafer laser interferometer system 18, the reticle stage drive section 14, the wafer stage drive section 24, and the stage controller 19.
  • the exposure must be performed in a state where the surface of the wafer W is substantially coincident with the imaging plane of the projection optical system PL within the illumination area (exposure area) IA on the wafer W. Therefore, auto-trepering, autofocus, and flatness correction of the wafer W based on the output of the focus position detection system (60a, 60b) described above are performed by the main controller 20 as follows. Be executed.
  • the main controller 2 0, for example, eight of the tracking sensor S 2 1 to S 3 4, the ⁇ E c prefetch sensor SUS or S 4 1 to S 4 4 according to the moving direction of the total of the two
  • the focus sensor S is previously selected via a sensor selection circuit (not shown).
  • the wafer W is scanned in the + Y direction (the arrow SD direction in FIG. 5).
  • Shall prefetch sensor S 41 to S 44 is selected.
  • the main control unit 20 is, for example, those pre-reading sensors S 41 to
  • the stage control device is determined based on the determination result. Instruct 19 to correct the defocus.
  • the Z / tilt stage 30 is driven in the + Z direction or the 1Z direction by the stage controller 19 via the wafer stage drive unit 24, and the surface of the wafer W is near the approximate plane of the image plane of the projection optical system PL. Is set to
  • the main controller 20 based on the measurement values of their follow-up sensor S 31 to S 34 An approximate straight line is calculated, and the target value of the leveling control in the non-scanning direction of w / w is set so that the approximate straight line is parallel to the approximate plane of the image plane of the projection optical system P.
  • the Z ⁇ tilt stage 30 is driven in the 0 y direction by the stage control device 19 via the wafer stage drive unit 24, and the leveling control of the wafer W in the non-scanning direction is performed.
  • the main controller 20 sets the following sensors S 31 to
  • the piezoelectric element Pij ⁇ Pij + 3 are, within the drive circuit 9 O v, and one corresponding to Pu ⁇ Pi4 in the drive circuit 9 in FIGS. 7-9, Te following description smell,
  • the codes used in FIGS. 7 to 9 are used as they are.
  • the driving of the piezoelectric elements Pij to Pij + 3 is performed as follows.
  • drive voltage data (first drive voltage data) for the piezoelectric element Pij is transmitted via the second bus BS2.
  • the select signal SL v for the drive circuit 90 v from L level as well as the H level, to turn on the DZA converter DZAi connected to the piezoelectric element Pij via the first bus BS 1 Signal (DZ A converter on signal (here, the truth table in Fig. 10), the input of signal lines X1 and Y1 is at H level, and the input of other signal lines is at L level) This turns on the DZA converter DZAi.
  • the first drive voltage data is latched by the DZA converter DZAi.
  • the first drive voltage data is converted to analog data by the DZA converter DZAi, amplified by the amplifier AM Pi, and applied to the piezoelectric element Pij.
  • the driving of the piezoelectric element Pij is performed.
  • the drive voltage data (second driving voltage to the piezoelectric elements P ij + 1 via the second bus BS 2 Data) is started. Further, at time t 3, No. signal for turning on the DZA converter DZA 2 connected to the piezoelectric element Pij + i (in DZA converter ON signal (here, the input signal lines X 1, Y 2 is H leveled Le, the input of the other signal line is L level)) is sent, thereby DZA Compur data DZA 2 is turned on. Then, the second driving voltage data is latched in the D ZA converter DZA 2 in synchronization therewith, the second driving voltage data DZA con JP02 / 13180
  • the third driving voltage data is latched in DZA converter DZA 3 connected to the piezoelectric element Pij + 2
  • the fourth drive voltage data DZA converter D A4 connected to the piezoelectric element Pij + 3 is Latched.
  • each driving voltage data is converted into an analog signal by each DZA converter, then amplified by an amplifier, and applied to each piezoelectric element, thereby driving the piezoelectric elements Pij + 2 and Pij + 3. .
  • the surface shape of the wafer W shown in FIG. W surface shape is corrected to a nearly flat shape as shown in Fig. 4C. That is, in the present embodiment, the piezoelectric elements are individually driven to remove the irregularities on the surface of the wafer W in the exposure region I, which cannot be corrected by the leveling of the wafer W. By moving, it can be corrected.
  • the main controller 20 based on the measurement values of their follow-up sensor S 31 to S 34, adjusts an dregs amount Deformation in the same manner as when the above-described prefetching.
  • the above operations a. To c. are actually performed in a very short time.
  • the front end of the first shot area on the wafer W comes to be applied to the follow-up sensor S 21 to S 24 in the second row, the main controller 20, based on the first line of the follow-up sensor S 31 to S 34 and the second line of the tracking sensor S 2 i ⁇ S 24 measurement results, the a. to c. a projection optical system of the same surface of the wafer W and Align to the PL image plane.
  • main controller 2 0, when the above a.
  • a similar leveling control approximation of the wafer W surface based on the follow-up sensor S 31 to S 34 and S 21 to S 24 of the measurement results
  • the plane is calculated, and not only in the non-scanning direction of ⁇ 1 ⁇ W, but also in the scanning direction so that the average plane and the above-mentioned approximate plane of the image plane of the projection optical system P are parallel. Perform ring control. Further, at the time when the driving is performed in this case the b.
  • a piezoelectric element Pij ⁇ Pij + 3 is substantially below the follow-up sensor S 21 to S 24 in the second row, the first row beneath eye tracking sensors S 31 ⁇ S 34 piezoelectric element Pi + ij ⁇ Pi + ij + 3 is located.
  • main controller 20 aligns the surface of wafer W with projection optical system PL image plane in exactly the same manner as in d. Above, but at this time, outputs the select signal output destination to drive circuit 9 Ov To drive circuit 90 v + 1 .
  • the wafer stage WST is step-moved in the X and Y directions by the stage controller 19 according to the instruction from the main controller 20, and the second shot (second The second shot area is moved to the acceleration start position for exposure. Then, under the control of the main controller 20, scanning exposure similar to the above is performed on the second shot.
  • the scanning exposure of the shot area on the wafer W and the stepping operation between the shot areas are repeatedly performed, and the circuit pattern of the reticle R is sequentially transferred to all the exposure target shot areas on the wafer W. .
  • a region having a predetermined area in which the plurality of pins 32 are arranged is divided into a matrix to correspond to each divided region.
  • a plurality of piezoelectric elements PII to PMN are provided.
  • the driving device 85 can simultaneously and individually drive a plurality (eight) of the piezoelectric elements P constituting each of the blocks that have been divided into blocks, among the plurality of piezoelectric elements P, and apply an applied voltage (driving voltage). ) Can be adjusted individually.
  • at least one pin 32 is arranged above each piezoelectric element P. Therefore, regarding the divided regions corresponding to each block of the piezoelectric element, it is possible to reliably suppress the unevenness of the surface of the wafer W supported by the pins 32.
  • the plurality of piezoelectric element blocks include a plurality of divided blocks (specific blocks) each composed of a 2 ⁇ 4 piezoelectric element group arranged in a matrix with 2 rows and 4 columns.
  • the driving device 85 connects 2 X 4 switches (AND circuits GT 1 to GT 8) provided individually corresponding to the respective piezoelectric elements constituting each divided block to two X group signal lines ( X1 and X2), the first signal input through one signal line selected from among the four Y group signal lines (Y1, Y2, Y3, Y4) Individually driving 2 ⁇ 4 piezoelectric elements by individually turning on / off using a combination with a second signal input through one signal line selected from q driving circuits 9 0 l to 90q.
  • each piezoelectric element constituting each divided block is individually connected to a voltage supply source, it is possible to form a closed circuit for driving each piezoelectric element only when necessary, and The data amount (or signal line) for selecting the target piezoelectric element can be reduced.
  • the larger the divided block the greater the effect of the reduction.
  • (a + b) pieces (bits) of data are sufficient.
  • the drive device 85 switches the block of the piezoelectric element to be driven in accordance with a select signal (external command) input from the main control device 20. ing.
  • a select signal external command
  • the circuit configuration can be simplified as compared with the case where the blocks of all the piezoelectric elements are always driven, and the number of output ports is limited especially when computer control is performed. There is also an advantage that it is difficult.
  • the wafer holder 70 is arranged outside a region of a predetermined area in which the plurality of pins 32 are arranged, surrounds the region, and flattens the wafer W together with the plurality of pins 32.
  • a rim portion 28 is provided to support the rim while maintaining the degree. Therefore, the wafer W is maintained on the wafer holder 70 with a certain degree of flatness including the free end near the outer edge, that is, without any extreme unevenness.
  • a space inside the rim portion 28 is used as a suction mechanism for suctioning the wafer W to the tip portions of the plurality of pins 32 and the upper end portion of the rim portion 28.
  • a vacuum suction mechanism (first vacuum pump 46 A, solenoid valve V 1, supply / exhaust pipe 40, and supply / exhaust passages 38 A to 38) for vacuum-suctioning the gas in the apparatus is provided. For this reason, even if the substrate holding device moves at high speed, the displacement of the substrate is prevented.
  • the main control apparatus 20 controls the driving device 85 based on the detection result of the focus position detection system (60a, 60b). It is possible to adjust the shape of the surface of the wafer W by controlling a distortion of at least one piezoelectric element selected from among the plurality of piezoelectric elements PH ⁇ P MN through. That is, during scanning exposure, the distortion of the piezoelectric element P in the projection area (exposure area) IA where the pattern of the reticle R is projected by the projection optical system PL is adjusted. The unevenness on the surface of the wafer W can be suppressed within the range of the depth of focus of the projection optical system PL, and color unevenness due to defocus can be suppressed, thereby improving the exposure accuracy.
  • the main controller 20 controls the stage controller 19 and the wafer stage drive based on the detection result of the focus position detection system (60a, 6Ob).
  • the wafer holder 70 is driven via the section 24 in the Z-axis direction and in the direction inclined with respect to the XY plane. That is, in the present embodiment, the drive system (wafer stage drive unit) that drives the Z-tilt stage 30 and the wafer holder 70 described above in the optical axis direction of the projection optical system PL and in a direction inclined with respect to a plane orthogonal to the optical axis direction. 24, the stage control device 19) is controlled by the main control device 20 based on the detection result of the focus position detection system (60a, 60b).
  • the surface of the wafer W can be positioned near the image plane of the projection optical system PL, and the overall inclination can be corrected. In particular, the latter can correct large undulations (curving components) on the surface of the wafer W.
  • the driving stroke of the piezoelectric element can be reduced. It is possible to prevent the occurrence of a situation where there is no data.
  • the wafer holder may not be able to be driven in either the optical axis direction or the tilt direction with respect to a plane orthogonal to the optical axis direction. That is, Z ⁇ Tilt stage 02 13180
  • a simple wafer table may be used as Z ′ tilt stage 30.
  • the exposure apparatus 1 0 0 of the present embodiment the use of A r F excimer one laser light from the short wavelength Wavelength 1 8 0 nm following vacuum ultraviolet light, for example, the F 2 laser beam as illumination light IL, the projection optical Since the focal depth of the system PL is further narrowed, as described above, the irregularities on the surface of the wafer W supported by the pins 32 can be reliably suppressed by driving the piezoelectric element.
  • the effect of the present embodiment is particularly large. It can be said.
  • the image plane distortion of the projection optical system (that is, the shape of the image plane such as curvature of field or tilt of the image plane) is accurately measured in advance.
  • the main control device 20 performs control in further consideration of the image surface distortion, and the surface of the wafer W is corrected according to the image surface distortion by the selective driving of the piezoelectric element P. Regardless of the image plane distortion, it is desirable that the surface of the wafer W (short area) be within the range of the depth of focus of the projection optical system P over almost the entire exposure area IA.
  • the wafer holder 70 has a three-layer structure and the intermediate layer has only one layer including a plurality of piezoelectric elements P arranged in a matrix shape has been described.
  • a plurality of layers including the piezoelectric element P may be provided, for example, two layers, and the arrangement of the piezoelectric elements in each layer may be alternated.
  • the piezoelectric element forming one layer is mainly used for correcting unevenness on the surface of the wafer W in the non-scanning direction
  • the piezoelectric element forming the other layer is mainly used for correcting unevenness on the surface of the wafer W in the scanning direction. It is good.
  • the piezoelectric element P is driven during the scanning exposure. However, at least before the scanning exposure of each shot area, the piezoelectric element P is driven to correct the unevenness of the surface of the shot area, and the scanning exposure is performed. Driving only Z 'tilt stage 3 0 Just do it.
  • the shot area surface does not necessarily have to be made flat by the correction by the piezoelectric element P.
  • the exposure area IA to which the illumination light is irradiated can be obtained.
  • At least one of the surfaces of the shot area is set so that the image plane of the projection optical system P matches the surface of the shot area (in other words, the shot area surface falls within the effective depth of focus of the projection optical system PL).
  • the H-convex may simply be changed in the section.
  • the piezoelectric element P is driven to correct the unevenness of the surface of the shot area after the start of the scanning of the wafer and before the scanning exposure of each shot area.
  • the timing of the unevenness correction may be arbitrarily set. For example, unevenness on the surface of the shot area may be corrected before the start of scanning of the wafer.
  • main controller 20 may control the Z position (projection optical system PL) at a plurality of points of each shot area on wafer W at any time before the illumination light is applied to each shot area.
  • the piezoelectric element P may be driven during scanning exposure based on the detection result, as in the above-described embodiment.
  • a focus position detection system similar to the above-described focus position detection system (60a, 60b), or Japanese Patent Application Laid-Open No. 7-321030 and U.S. Pat.
  • wafer alignment incorporating a focus position detection system that projects a detection beam onto a wafer through a part of a wafer alignment system (such as an objective optical system)
  • the main controller 20 performs the above-mentioned EGA in which a number of shot areas are used as alignment shot areas (sample shot areas) using the system, and the main controller 20 moves the wafer W between the alignment shots.
  • the Z position at a plurality of points in each shot area on the wafer W is detected using the focus position detection system (60a, 60b) or the focus position detection system incorporated in the wafer alignment system described above. , And store the detection result in a memory etc. It is good to put.
  • the main controller 20 performs the scanning exposure or the scanning exposure based on the stored detection result. What is necessary is just to drive the piezoelectric element P in the light.
  • the above-described focus position detection system (60a, 60b) is used instead of the focus position detection system built into the wafer alignment system, and at least one wafer is exposed.
  • the piezoelectric element P may be driven based on this information.
  • the above-mentioned focus position detection system 60a, 60b
  • the focal point detection system provided with the projection optical system PL or the wafer alignment system in a predetermined positional relationship and used for detecting the unevenness information on the wafer surface may have only one measurement point.
  • the exposure apparatus of the above embodiment has only one wafer stage, the position at which the reticle pattern is transferred via the projection optical system PL and the measurement at which mark detection is performed by the wafer alignment system are performed.
  • a wafer stage may be arranged at each position (alignment position), and a twin wafer stage type that can execute the exposure operation and the measurement operation substantially in parallel may be used.
  • information on the unevenness is detected in at least one shot area on the wafer by using the focus position detection system arranged at the measurement position described above, and, for example, the wafer stage is moved from the measurement position to the exposure position.
  • the piezoelectric element P may be driven to correct the unevenness of the wafer W.
  • twin wafer stage type exposure apparatus is disclosed, for example, in Japanese Patent Application Laid-Open No. 10-214,833 and US Pat. No. 6,341,077 corresponding thereto, or International Publication WO988. This is disclosed in, for example, Z 4791 and corresponding US Patent Nos. 6,262,796.
  • the piezoelectric element P is controlled in an open loop, but the drive amount of the piezoelectric element P is measured in consideration of the hysteresis of the piezoelectric element P.
  • a sensor for example, a strain gauge
  • the piezoelectric element P is controlled based on the output of an AF sensor (the focus position detection system described above). The driving amount may be corrected.
  • a laminated piezoelectric element piezoelectric actuator
  • a distortion proportional to the square of the electric field electrical distortion
  • the wafer holder has a three-layer structure.
  • the present invention is not limited to the above embodiment.
  • the base member 42 constituting the lowermost layer (third layer) may be formed as described above.
  • Z ⁇ The tilt stage 30 may be used as well.
  • the imaging plane of the projection optical system PL may be shifted in at least a part of the exposure area IA in the Z direction.
  • the image of the projection optical system PL is formed by, for example, controlling the light source to change the wavelength of the illumination light, moving the reticle R, or moving at least one optical element of the projection optical system PL. Just shift the surface.
  • the wafer is flattened in both the scanning direction and the non-scanning direction (correction of the unevenness of the wafer).
  • the non-scanning direction is performed. Only the irregularities of the wafer may be corrected for only the above.
  • the outer diameter of the rim portion 28 of the wafer holder is slightly smaller than the outer diameter of the wafer W, but the outer diameter of the rim portion 28 is substantially equal to or larger than the outer diameter of the wafer W. It is good.
  • the wafer holder may have the upper end surface of the rim portion 28 at almost the same height as the plane defined by the large number of pins 32, or may have the upper end surface be smaller than the plane defined by the large number of pins 32. It may be slightly lower.
  • a plurality of projections (pins) whose upper end surface substantially coincides with a plane defined by the large number of pins 32 may be provided on the upper end surface of the rim portion 28. At this time, the plane defined by the plurality of projections provided on the upper end surface of the rim 28 may be slightly lower than the plane defined by the number of pins.
  • a plurality of supply / exhaust ports 36 arranged along the radial direction from the vicinity of the center of the wafer holder are provided at intervals of approximately 120 °.
  • the present invention is not limited to this.
  • a plurality of supply / exhaust ports 36 may be arranged in a grid pattern.
  • the Z ′ tilt stage 30 may be finely movable in the XY plane, and the wafer stage may be a coarse / fine movement stage.
  • the reticle stage may be a coarse / fine movement stage.
  • K r F excimer laser light as illumination light IL
  • a r F excimer laser beam or or F 2 laser light bright lines in the ultraviolet region from an ultra high pressure mercury lamp (g-rays, I line, etc.)
  • the present invention is not limited to this, and other vacuum ultraviolet light such as Ar 2 laser light (wavelength: 126 nm) may be used as the illumination light I.
  • a single-wavelength laser beam in the infrared or visible range oscillated from a DFB semiconductor laser or a fiber laser as vacuum ultraviolet light for example, Erbium (Er) (or both erbium and ytterbium (Yb))
  • Erbium (Er) or both erbium and ytterbium (Yb))
  • Yb ytterbium
  • the above embodiment focuses on the advantage of the scanning exposure method that a large area pattern can be transferred onto a wafer with high accuracy without excessively increasing the load on the projection optical system.
  • scan type scanning exposure equipment Although the case where the present invention is applied has been described, it goes without saying that the applicable range of the present invention is not limited to this. That is, the present invention can be suitably applied to a step-and-repeat type reduction projection exposure apparatus, and similarly, high-precision exposure without defocus can be performed.
  • a static exposure is performed, a plurality of support members (corresponding to the pins in the above embodiment) are driven to adjust the shape of the surface of the wafer W, and the exposure region ( (Corresponds to the shot area.) Correction so that the entire inner part falls within the range of the depth of focus of the projection optical system can be performed more accurately.
  • the illumination optical system and projection optical system composed of multiple lenses are incorporated in the main body of the exposure apparatus, optical adjustment is performed, and a reticle stage consisting of many mechanical parts and a wafer stage are attached to the main body of the exposure apparatus to perform wiring and
  • the exposure apparatus of the above embodiment can be manufactured by connecting the pipes and performing overall adjustment (electrical adjustment, operation check, etc.). It is desirable to manufacture the exposure equipment in a clean room where the temperature and cleanliness are controlled.
  • the present invention is applied to an exposure apparatus for manufacturing a semiconductor.
  • the present invention is not limited to this.
  • the present invention is applied to a liquid crystal display device for transferring a liquid crystal display element pattern to a square glass plate.
  • the present invention can be widely applied to an exposure apparatus, an exposure apparatus for manufacturing a thin-film magnetic head, an image sensor, a micromachine, an organic EL, a DNA chip, and the like.
  • a transmissive reticle is generally used in an exposure apparatus that uses DUV (far ultraviolet) light or VUV (vacuum ultraviolet) light, and the reticle substrate is quartz glass, fluorine-doped quartz glass, or fluorite. , Magnesium fluoride, quartz, or the like is used.
  • the present invention may be applied to an immersion exposure apparatus disclosed in, for example, International Publication No. WO 9949504, in which a liquid is filled between a projection optical system PL and a wafer.
  • the substrate holding apparatus of the present invention is applied to an exposure apparatus.
  • a method other than the exposure apparatus may be used.
  • the substrate holding device of the present invention can be suitably applied to devices such as an inspection device and a processing device.
  • FIG. 12 shows a flowchart of an example of manufacturing devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.).
  • step 201 design step
  • device functions and performance design for example, circuit design of a semiconductor device, etc.
  • step 202 mask manufacturing step
  • step 203 wafer manufacturing step
  • a wafer is manufactured using a material such as silicon.
  • step 204 wafer processing step
  • step 204 wafer processing step
  • step 205 device assembling step
  • step 205 includes, as necessary, processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation).
  • step 206 create in step 205 Inspections such as operation confirmation test and endurance test of the selected device are performed. After these steps, the device is completed and shipped.
  • FIG. 13 shows a detailed flow example of step 204 in the semiconductor device.
  • step 2 11 oxidation step
  • step 2 12 CVD step
  • step 2 13 electrode formation step
  • step 2 14 ion implantation step
  • steps 211 to 214 constitutes a pre-processing step in each stage of wafer processing, and is selected and executed according to a necessary process in each stage.
  • the post-processing step is executed as follows.
  • step 215 resist forming step
  • step 2 16 exposure step
  • step 217 development step
  • Step 218 etching step
  • step 219 resist removing step
  • the exposure apparatus of the above embodiment is used in the exposure step (step 2 16), so that the reticle pattern can be transferred onto the wafer with high accuracy. .
  • the productivity (including yield) of highly integrated devices can be improved.
  • the substrate holding device of the present invention is suitable for reliably suppressing irregularities on the surface of a substrate to be held.
  • the exposure apparatus of the present invention is suitable for transferring a pattern onto a substrate while suppressing color unevenness due to defocus.
  • the device manufacturing method of the present invention is suitable for manufacturing a highly integrated microdevice.

Abstract

Lors d'une exposition,, un appareil de commande principal ajuste, selon le résultat de détection d'un système de détection de position de point focal, la distorsion d'éléments piézo-électriques situés dans une région (région de projection) où un motif à réticule est projeté par un système optique de projection parmi plusieurs éléments piézo-électriques constituant un porte plaquette par un appareil de commande, ce qui permet d'ajuster la forme convexe/concave de la surface plaquette. Ainsi il est possible de supprimer la forme convexe/concave de la surface plaquette dans la zone de projection dans les limites d'une profondeur focale du système optique de projection. Cela permet de supprimer les irrégularités de couleur dues à la défocalisation et d'améliorer la précision d'exposition.
PCT/JP2002/013180 2001-12-17 2002-12-17 Appareil porte-substrat, appareil d'exposition et procede de production d'un dispositif WO2003052804A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003553607A JPWO2003052804A1 (ja) 2001-12-17 2002-12-17 基板保持装置、露光装置及びデバイス製造方法
AU2002354196A AU2002354196A1 (en) 2001-12-17 2002-12-17 Substrate holding apparatus, exposure apparatus, and device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001382897 2001-12-17
JP2001-382897 2001-12-17

Publications (1)

Publication Number Publication Date
WO2003052804A1 true WO2003052804A1 (fr) 2003-06-26

Family

ID=19187525

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/013180 WO2003052804A1 (fr) 2001-12-17 2002-12-17 Appareil porte-substrat, appareil d'exposition et procede de production d'un dispositif

Country Status (4)

Country Link
JP (1) JPWO2003052804A1 (fr)
AU (1) AU2002354196A1 (fr)
TW (1) TW200301538A (fr)
WO (1) WO2003052804A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033204A (ja) * 2003-07-09 2005-02-03 Carl Zeiss Smt Ag 投影露光方法と投影露光システム
JP2005259870A (ja) * 2004-03-10 2005-09-22 Nikon Corp 基板保持装置、ステージ装置及び露光装置並びに露光方法
JP2007081450A (ja) * 2006-12-26 2007-03-29 Dainippon Printing Co Ltd 露光機のワークステージ及び露光方法
JP2008140832A (ja) * 2006-11-30 2008-06-19 Disco Abrasive Syst Ltd ピンチャック式チャックテーブルおよびそれを用いた切削加工装置
JP2011097027A (ja) * 2009-09-29 2011-05-12 Denso Corp 半導体装置の金属電極形成方法及び金属電極形成装置
JP2013135218A (ja) * 2011-12-23 2013-07-08 Asml Netherlands Bv サポート、リソグラフィ装置、およびデバイス製造方法
TWI447780B (zh) * 2004-06-09 2014-08-01 尼康股份有限公司 A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet
US9188879B2 (en) 2012-02-24 2015-11-17 Kabushiki Kaisha Toshiba Substrate holding apparatus, pattern transfer apparatus, and pattern transfer method
JP2016213491A (ja) * 2011-08-12 2016-12-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板のボンディング装置及び方法
JP2017054973A (ja) * 2015-09-10 2017-03-16 株式会社ディスコ 加工装置
JP7432354B2 (ja) 2019-12-19 2024-02-16 東京エレクトロン株式会社 熱処理装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8111406B2 (en) * 2007-11-14 2012-02-07 Nikon Corporation Surface position detecting apparatus, surface position detecting method, exposure apparatus, and device manufacturing method
TW201324617A (zh) * 2011-12-13 2013-06-16 Metal Ind Res & Dev Ct 具熱膨脹間隙監測功能的加熱裝置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077559A2 (fr) * 1981-10-19 1983-04-27 Hitachi, Ltd. Dispositif pour profiler la surface des plaquettes semi-conductrices
JPS58219735A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd ステップアンドリピート方式のプロキシミティ露光装置
JPH08195335A (ja) * 1995-01-13 1996-07-30 Hitachi Ltd 露光方法及び露光装置
JPH08321457A (ja) * 1995-05-26 1996-12-03 Nikon Corp 露光装置
US5793474A (en) * 1994-09-30 1998-08-11 Nikon Corporation Exposure apparatus wherein a wafer contact portion of a movable stage includes linear ridges

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077559A2 (fr) * 1981-10-19 1983-04-27 Hitachi, Ltd. Dispositif pour profiler la surface des plaquettes semi-conductrices
JPS58219735A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd ステップアンドリピート方式のプロキシミティ露光装置
US5793474A (en) * 1994-09-30 1998-08-11 Nikon Corporation Exposure apparatus wherein a wafer contact portion of a movable stage includes linear ridges
JPH08195335A (ja) * 1995-01-13 1996-07-30 Hitachi Ltd 露光方法及び露光装置
JPH08321457A (ja) * 1995-05-26 1996-12-03 Nikon Corp 露光装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033204A (ja) * 2003-07-09 2005-02-03 Carl Zeiss Smt Ag 投影露光方法と投影露光システム
JP2005259870A (ja) * 2004-03-10 2005-09-22 Nikon Corp 基板保持装置、ステージ装置及び露光装置並びに露光方法
TWI447780B (zh) * 2004-06-09 2014-08-01 尼康股份有限公司 A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet
JP2008140832A (ja) * 2006-11-30 2008-06-19 Disco Abrasive Syst Ltd ピンチャック式チャックテーブルおよびそれを用いた切削加工装置
JP2007081450A (ja) * 2006-12-26 2007-03-29 Dainippon Printing Co Ltd 露光機のワークステージ及び露光方法
JP2011097027A (ja) * 2009-09-29 2011-05-12 Denso Corp 半導体装置の金属電極形成方法及び金属電極形成装置
JP2016213491A (ja) * 2011-08-12 2016-12-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板のボンディング装置及び方法
TWI708307B (zh) 2011-08-12 2020-10-21 Ｅｖ集團Ｅ塔那有限公司 接合基板之設備及方法
JP2013135218A (ja) * 2011-12-23 2013-07-08 Asml Netherlands Bv サポート、リソグラフィ装置、およびデバイス製造方法
US9470969B2 (en) 2011-12-23 2016-10-18 Asml Netherlands B.V. Support, lithographic apparatus and device manufacturing method
US9188879B2 (en) 2012-02-24 2015-11-17 Kabushiki Kaisha Toshiba Substrate holding apparatus, pattern transfer apparatus, and pattern transfer method
JP2017054973A (ja) * 2015-09-10 2017-03-16 株式会社ディスコ 加工装置
JP7432354B2 (ja) 2019-12-19 2024-02-16 東京エレクトロン株式会社 熱処理装置

Also Published As

Publication number Publication date
JPWO2003052804A1 (ja) 2005-04-28
AU2002354196A1 (en) 2003-06-30
TW200301538A (en) 2003-07-01

Similar Documents

Publication Publication Date Title
CN108732871B (zh) 搬送系统、曝光装置、器件制造方法、搬送方法、曝光方法
JP4345098B2 (ja) 露光装置及び露光方法、並びにデバイス製造方法
JP4288694B2 (ja) 基板保持装置、露光装置及びデバイス製造方法
US7218383B2 (en) Holding system, exposure apparatus, and device manufacturing method
JP3966211B2 (ja) 露光方法、露光装置及びデバイス製造方法
JP6698706B2 (ja) 基板ホルダ、リソグラフィ装置およびデバイス製造方法
KR101539153B1 (ko) 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
JP2007273693A (ja) 基板保持部材及び基板保持方法、基板保持装置、並びに露光装置及び露光方法
WO2003052804A1 (fr) Appareil porte-substrat, appareil d'exposition et procede de production d'un dispositif
JP6676197B2 (ja) ステージシステム、リソグラフィ装置およびデバイス製造方法
JP4204964B2 (ja) リソグラフィ装置
WO1999036949A1 (fr) Procede d'exposition et systeme de lithographie, appareil d'exposition et son procede de fabrication
JPWO2005036620A1 (ja) 露光方法及び露光装置、並びにデバイス製造方法
JP2010182866A (ja) 静電吸着保持装置、露光装置、露光方法及びデバイスの製造方法
JP2009194204A (ja) 露光装置、露光システムおよびデバイス製造方法
JP4348734B2 (ja) 基板保持装置及び露光装置、並びにデバイス製造方法
US7405810B2 (en) Method and apparatus for positioning a substrate on a substrate table
JP2005277117A (ja) 基板保持装置、露光方法及び装置、並びにデバイス製造方法
JP2005044882A (ja) 搬送装置及び露光装置
JP2004221323A (ja) 基板保持装置、露光装置、及びデバイス製造方法
JP2003156322A (ja) 位置計測方法及び装置、位置決め方法、露光装置、並びにマイクロデバイスの製造方法
JP2012114198A (ja) 光学ユニット、光学系、露光装置、及びデバイスの製造方法
JP2009164283A (ja) 基板保持装置、露光装置およびデバイスの製造方法
JP2005116849A (ja) 静電吸着装置及び方法、露光装置、デバイスの製造方法
JP2009164284A (ja) パターン形成基板、露光方法およびデバイスの製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003553607

Country of ref document: JP

122 Ep: pct application non-entry in european phase