TW200301538A - Substrate holding unit, exposure apparatus, and device manufacturing method - Google Patents

Abstract

When exposure is performed, a main controller adjusts depressions and protrusions of a wafer surface via a driving unit, by adjusting expansion and contraction of piezoelectric elements which are located within an area (a projection area) onto which a pattern of a reticle is projected by a projection optical system, based on detection results of a focal position detection system, the piezoelectric elements being among a plurality of piezoelectric elements which constitute a wafer holder. With this adjustment, depressions and protrusions of the wafer surface within the projection area can be suppressed to within a range of a focal depth of the projection optical system. Therefore, macroscopic observation of the CD (critical dimension) variation due to defocus is suppressed, and thereby it becomes possible to improve exposure accuracy.

Description

200301538 The long-distance month 5 is against the lunar horror. Retrospective erosion; 丨 _, weaving _, _, method and scale limitation description) [Invention ^ Technical Field] The technical field, the present invention relates to a substrate holding device, Exposure device and apparatus xe method 'More specifically, it relates to a substrate holding device for holding a flat substrate, an exposure device having the substrate holding device as an exposed substrate holding device, and a device using the exposure device. Production method. [J # u] Background Art Hitherto, in photolithography programs used to manufacture semiconductor elements, liquid crystal display elements, and the like, a pattern to be formed on a mask or a reticle (hereinafter collectively referred to as a "reticle") is used. An exposure device that transfers the over-projection optical system to a substrate coated with a wafer or a glass plate (hereinafter, collectively referred to as a "wafer"). In recent years, with the increase in the integration of half-thickness components, the step-and-repeat mode has reduced the projection exposure device (ie, a stepper) and a scanning projection exposure method that improves the step-u scan method after the stepper. (That is, the scanning stepper #sequential moving type projection exposure device has become the mainstream. Then the escape projection exposure device t is provided with a circular stage m which can be moved in the plane of the second element. The circular stage m is fixed on the wafer stage. The wafer holding portion holds the wafer by "vacuum adsorption or electrostatic adsorption." However, in recent years, the pins disclosed in No. 129438, etc. have been used more frequently. Although the wafer holding portion has various types, Kaiping's first chuck-type wafer holding unit. Focused on the projection exposure. On the other hand, with the increasing integration of semiconductor components, clothing has gradually demanded higher resolution. Therefore, all parties are specialized Tsingzhen (when the description page of the invention is not enough, it is necessary to remember and use it) t 20 200301538 玖, the description of the invention is to shorten the exposure wavelength and increase the number of openings (NA) (ie, high) NA). The latest The shadow exposure device is a scanning stepper (also called a scanner) that uses excimer laser as the exposure light source, and the exposure wavelength set by the projection exposure is 193_. @, It is said that the actual exposure wavelength will be shorter in the future. It is a powerful candidate for the light source of the projection exposure device under the wavelength of 157_ dagger laser system. 15 Once a day, however, the short wavelength and high NA of the exposure wavelength will cause the light to be emitted to the system and the system PL at the same time. Narrowing the depth of focus. Therefore, if the short exposure wavelength and high N.A. have been achieved to the desired level, it is also likely to be out of focus due to the shallow depth of focus and the unevenness on the wafer surface. Therefore, the transfer accuracy is reduced. That is, in order to realize a next-generation exposure device that uses a laser or a light source with a shorter wavelength to achieve high-precision exposure, the unevenness of the wafer surface during exposure can be suppressed to a desired range. The emergence of new technologies is necessary and indispensable. However, only the current wafer holding section is considered to be warped due to the influence of the suction force caused by vacuum or the like, or the wafer is affected by the process. It is difficult to suppress the circular irregularities and the like within the desired range. As a result, the status quo is that the performance of the wafer holding section is the key to the realization of the next-generation projection exposure device. [Summary of the Invention] Invention The disclosure is based on the fact that the present invention is based on the above situation, so the main purpose is to provide a substrate that can reliably suppress the unevenness on the substrate surface of the object to be held. And use continuation pages) 200301538 Rose, Invention Description Invention Description Continued clover holding device. — The second object of the present invention is to provide an exposure device which can suppress blur caused by defocus and improve exposure accuracy. Three objects are to provide a device manufacturing method capable of improving the productivity of the device 5 with a high degree of integration. From a first point of view, the substrate holding device of the present invention is a device for holding a flat substrate, and includes a plurality of protruding support members arranged in a predetermined area and formed to be supported from below by each front end portion. The substrate supporting surface of the aforementioned substrate; the majority of the driving elements are individually corresponding to the majority of the divided areas separated from the aforementioned area by 10, and a plurality are individually provided to respectively include most of the aforementioned supporting members; and the driving device may be Simultaneously and individually drive the aforementioned plurality of driving elements, and constitute a plurality of the aforementioned driving elements of each block pre-blocked in order to have a predetermined correspondence relationship in the aforementioned multi-division domain, so that the aforementioned in the corresponding division domain The shape of the supporting surface of the substrate support 15 changes. Thereby, a plurality of driving elements are individually provided corresponding to the areas of a predetermined area divided into a plurality of protrusion-shaped supporting members, each divided area including a plurality of the aforementioned supporting members individually. In addition, the driving device is capable of simultaneously and individually driving the plurality of driving elements, and constitutes a plurality of the foregoing driving elements of each block that is pre-blocked in order to have a predetermined correspondence relationship in the plurality of divided areas, so that the corresponding The shape of the substrate support surface in the divided field changes. Therefore, in terms of the divided fields corresponding to the blocks of the driving element, the substrate surface supported on the substrate supporting surface (the surface formed by the front end of most supporting members) can be reliably suppressed. Insufficient use of the description page > Please note and use continuation), 200301538 玖, description of the invention Description of the surface shape of the description of the continuation page, such as unevenness. Here, the drive device pre-blocks all the blocks, and can also be driven simultaneously and individually to form a number of driving elements that constitute each block. It can also be at least one arbitrary block and can be selected at the same time. Rather, the configuration of most of the driving elements used to constitute the block is driven individually. In any case, according to the present invention, in terms of a segmented area corresponding to a block of at least one driving element to be targeted, it is possible to reliably suppress the unevenness of the surface of the substrate supported by the supporting element. At this time, each of the foregoing divided fields and each block may have a one-to-one correspondence. 10 15; In the substrate holding device of this month, the aforementioned driving elements may correspond to the aforementioned divided areas, and a plurality of the driving elements may be arranged along at least one of the directions. In the substrate holding device of the present invention, the block of the plurality of driving elements described above may include a plurality of specific blocks composed of ⑽η driving element groups arranged in a matrix form of m rows and n columns. At this time, the foregoing driving device may use a combination of the first signal and the second signal and individually turn on and off mx η switches corresponding to respective driving elements for constituting each of the aforementioned special blocks, To individually drive the front; X n driving elements, and the aforementioned first signal is input through one signal line selected from m first signal lines, and the aforementioned second signal is input through n second signal lines Select one of the signal lines to input. In the substrate holding device described in this and the description, the aforementioned driving device can switch the block of the driving element to be driven according to the external port 仏 γ. In the substrate holding device of the present month, the driving element may be strained in response to an applied voltage. Please note and use the continuation page.) Frost page (when the description page is inadequate, 20 200301538, description of the invention, description of the invention continued page) At this time, the aforementioned driving element may be a piezoelectric element. 2 Substrate holding The device may further have a convex portion that is disposed outside the aforementioned area 'and surrounds the area' and supports the aforementioned substrate in the same state as most of the supporting members maintains its flatness. 5 ㈣ It may further have An adsorption mechanism that adsorbs the substrate to each of the front end portions of the majority of the supporting members and the upper end portion of the convex portion. At this time, the adsorption mechanism may be an electrostatic adsorption mechanism or a vacuum for sucking the gas in the interior of the convex portion. A vacuum suction mechanism. The substrate holding device of the present invention may further include a temperature adjustment device for adjusting the temperature of the plurality of driving elements and at least a part of the driving device. From a second viewpoint, the present invention is the first The exposure device is used to irradiate the energy beam to the mask formed with the pattern, and transfer the aforementioned pattern onto the substrate through the projection optical system. And the i-th exposure device includes: 15 substrate holding devices, such as any one of the patent application scope Nos. 1 to 12; a focus position detection system for detecting position information, and the position information is about The month on most points of the substrate surface held by the substrate holding device is used to describe the optical axis direction of the projection optical system; and the control device takes into account the detection result of the focus position detection system and controls the 20 driving clothes. The majority of the aforementioned driving elements are selectively driven remotely to adjust the shape of the surface of the substrate that has been held on the substrate holding device. By this, it is set by the engineering system, according to the detection result of the focus position detection system, and through the driving device. Drive at least one drive element selected from most drive elements A, and adjust the shape of the substrate surface. Therefore, at the time of exposure, 1 ¾ pages (if the invention is inadequate, note and use continuation pages) 200301538 发明, description of the invention Description of the invention Continuation sheet The driving element in the field (projection field) projected by the projection light system by adjusting the mask pattern The strain can completely suppress the projection area of the substrate surface within the focal depth range of the projection optical system. Therefore, according to the present invention, the blur caused by the defocus can be suppressed and the exposure accuracy can be improved. At this time, there is a driving system, The drive system drives at least one of the aforementioned optical axis direction and an oblique direction opposite to a surface perpendicular to the aforementioned optical axis direction, and drives a portion on which the aforementioned substrate of the substrate holding device is placed, and the control device may The driving system is controlled based on the detection result of the focus position detection system. In the first exposure device of the present invention, the control device may control the driving device in consideration of distortion information of the image curved surface of the projection optical system. 15 In the present invention The first exposure device may further include a scanning device that scans the mask and the substrate simultaneously with the energy beam and scans in the scanning direction, that is, the i-th exposure device of the present invention may be a scanning exposure device. At this time, the control device can modify at least the shape of the surface of the substrate, and the shape is a non-scanning direction perpendicular to the scanning direction in the irradiation area of the substrate surface irradiated by the energy beam. In the first exposure device of the present invention, when the scanning device is provided, the control device can control the driving device and can scan the mask and the substrate in the scanning event, taking the detection of the focus position detection M into consideration. As a result, the shape of the surface of the front plate was corrected, so that the irradiation area of the substrate surface irradiated by the aforementioned energy beam was substantially all within the range of the focal depth of the aforementioned projection optical system. 0 Continued pages (Issued to test the pendant, see the female continuation page) 20 200301538 Rose, Invention Description Invention Description Continued This% · 'The control device can consider before the aforementioned energy beam is irradiated on the aforementioned substrate The detection result of the aforementioned focus position detection system at any time point of time is used to perform control of the aforementioned driving device for correcting the shape of the surface of the substrate. 5 In the first exposure device of the present invention, the wavelength of the energy beam should be a wavelength capable of transferring a pattern. For example, the aforementioned energy beam can be vacuum ultraviolet light having a wavelength below 80 nm. From the viewpoint of Yoyo 3, the second exposure device of the present invention is a device for irradiating an energy beam onto a mask, and transposing the above-mentioned mask of FIG. 10 onto a substrate through a projection optical system, and the first 2 The exposure device has a scanning device that moves the substrate relative to the energy beam passing through the projection optical system while moving the mask relative to the energy beam; the detection device i is used to detect the position of the surface of the substrate Information, · The substrate holding device has a plurality of protruding support members and a plurality of driving elements, and the supporting members 15 are used to support the aforementioned substrate, and the driving elements are provided corresponding to a plurality of divided areas, respectively. The segmentation field is at least a non-scanning direction that intersects with the scanning direction in which the substrate is moved, and the segmentation is performed on the substrate on which the aforementioned pattern is transferred by the mask and the substrate moving at the same time. And the driving device, which drives at least one of the plurality of driving elements according to the detection result of the detection device 20 to adjust the predetermined collar The position of the substrate at least the surface of a part. Thereby, the substrate holding device i includes a plurality of protrusion-shaped supporting members and a plurality of driving elements for supporting the substrate, and the driving elements are respectively related to at least the non-scanning direction and through the mask and the substrate. Same as the second page (inventive description page is insufficient, please note and use the continuation page) 200301538 玖, the description of the invention description, the continuation page is moved to transfer the majority of the knife edge divided into the predetermined area on the substrate The h-page field is set accordingly. The position information held on the substrate surface of the holding device is detected by a detection device. X, the driving device is based on the test results of the test device to drive at least one of the majority of the driving elements. The surface position of the aforementioned substrate at least a part of the predetermined field is adjusted. The surface shape from the non-female drawing direction to the desired shape can result in that the surface of the substrate in a predetermined area on the substrate on which the pattern is transferred is consistent with the imaging surface of the projection optical system, so that the light can be polished. Concave and convex in the fine direction of the paste; 10 g, the importance of this correction is reported. "In Fang, Yiyi ~ Private sequence, by using one of the first and second exposure = devices of the present invention to perform exposure, a pattern can be formed on a substrate with high accuracy, and the yield can be good. Manufacture of micro-elements with higher integration. Therefore, from another point of view, the present invention can be said to be a device manufacturing method using the exposure device of the present invention. Brief Description of the Drawings The first diagram is shown schematically FIG. 2 is a plan view of a wafer holding section and a supply / exhaust mechanism connected to the wafer holding section 20 according to an embodiment of the present invention. FIG. 3 The figure is a plan view showing the relationship between the rod arrangement of the wafer holding portion in FIG. 2 and the short-circuit area on the wafer. FIG. 4A shows the portion corresponding to the short-circuit area s A in FIG. Plan view, Figure 4B is equivalent to the 0-sequence page shown in Figure 4a (when the invention turns out to be insufficient, please note and use the continuation page) 200301538 Description of the invention _ stomach view, Figure 4C shows 玖, Description of the invention The state in Fig. 4B to the state after the piezoelectric element is driven. Fig. 5 shows the positional relationship between the exposure area and the focus sensor. 5 Fig. 6 shows the MxN piezoelectric elements used to form the intermediate layer of the wafer holding portion. An example of the arrangement of elements. Section S outlines the internal structure of a driving device for driving a piezoelectric element.

FIG. 8 shows an example of the configuration of the driving circuit in FIG. 7. Fig. 9 shows an example of the configuration of the switching circuit of Fig. 8. Figure 10 shows the input (Qj) of the U tiger line to Df (xl, X2), Y # (Y1, Y2, Y3, Y4) and the output (0, 1) of the circuit gT1 to GT8 in Figure 9 Truth table for relationships. Fig. 11 is a timing chart of signals sent to drive the piezoelectric elements Pij to pij + 3. 15 Item 12 ® describes the embodiment of the device manufacturing method of the present invention

State flow chart. FIG. 13 is a flowchart showing details of step 204 in FIG. 12. t Embodiment; 3 Best Mode for Carrying Out the Invention 20 An embodiment of the present invention will be described below with reference to FIGS. 1 to 11. FIG. 1 shows a schematic configuration of an exposure apparatus 100 according to an embodiment. The exposure device 100 is a projection exposure device of a step-and-scan method. The exposure device 100 has an illumination system 丨 0, which is used to keep it as a mask. 0 Continued pages (When the description page of the invention is insufficient, please note and use the continued page) 13 200301538

Description of the invention _ 玖, description of the reticle table RST of the reticle R of the invention, which precedes the system pl, is equipped with a platform m which is a pure wafer w, and the control system of these.刖 This ... Ming system 1G is as disclosed in, for example, Japanese Patent Laid-Open Publication No. 6 ~ 3497G1 and corresponding U.S. Patent Publication No. 5,534,970, etc. Lens, cup-type integrator (internal reflection type integrator) or diffractive optical element, etc.), uniformity optical system, relay lens, variable transmission lens, variable field aperture (also known as Cover lines or light-shielding blades) and lenses ίο 15 20 etc. (both not shown). To the extent permitted by the domestic laws and ordinances of the designated country or selected selection country specified in the international application of the present invention, the disclosure of the patent license of Wu Mu Patent Publication is cited as part of the description in this specification. In this lighting system, 10 slits are illuminated with the illumination light IL as an energy beam to illuminate the slit-shaped lighting area defined by the cover lines on the line lines R with circuit patterns and the like at a substantially uniform illuminance. . Here, as the illumination light IL, far ultraviolet light such as KrF excimer laser light (wavelength 248 nm), vacuum ultraviolet light such as ArF excimer laser light (wavelength 193 nm), or F2 laser light (wavelength i57 nm) and the like are used. It is also possible to use bright lines (g-line, i-line, etc.) from the ultraviolet light field of the ultra-high pressure mercury lamp as the illumination light IL. A reticle R is fixed to the other reticle table RST by, for example, vacuum suction. The reticle stage rST can be perpendicular to the optical axis of the aforementioned lighting system 10 (and the optical axis AX of the projection optical system PL described below) by using a reticle stage driving unit 14 such as a linear motor. ) XY plane drive in the XY plane, at the same time in the predetermined scanning direction (here referred to the γ axis direction) and 13 consecutive pages (invention is not enough, please note and use the continued page) 14 200301538 Rose, invention The description of the invention explains the scan speed drive specified on the following pages. _ — SfL / a -τ- Λ of the reticle table RST is usually located in the plane of the mouth by a reticle laser interferometer (hereinafter, referred to as "俨 mn 铩 tract interferometer") 16 and transmitted through the moving mirror 15 and detected with a resolution of σ A s, 乂, for example, 0.5 nm to 1 nm. The position information of the reticle counter coffee from the reticle interferometer 16 is supplied to the main control device 20 as a control device through the platform control device i 19 and the platform control device 19 'according to The instruction of the main control device 20 is based on the position information of the reticle 纟 RST, and drives and controls the reticle 纟 RST through the reticle 纟 drive section 14. At this time, the reticle can also be mirror-finished from the end surface of RST to form a reflective surface (equivalent to the reflective surface of the aforementioned moving mirror 15). In May, the optical system PL of the shirt is arranged below the reticle stage RST in FIG. 1, and the direction of the optical axis Aχ is the z-axis direction. The projection optical system PL is, for example, a refractive optical system having a predetermined reduction magnification (for example, 1/4 or 1/5) on both sides telecentric. Therefore, if the illumination area of the reticle R is illuminated by the illumination SIL from the aforementioned illumination system 10, then the light in the illumination area through the reticle R is passed through the projection optical system PL ′ A reduced image (partially inverted image) of the circuit pattern of the marked line # R is formed on a wafer coated with a photoresist (photosensitizer) on the surface. Last month, the platform device 50 described above includes a wafer stage WST and is provided on the wafer. The wafer holding section 70 on the round table wst, and the wafer table driving section 24 for driving the wafer table WST and the wafer holding section 70, and the like. The aforementioned wafer stage WST includes: XY stage 31, which is on the first page (when the invention description page is insufficient, please note and continue the page) 20 200301538 Invention description If the stomach PL is located below On the base shown in the figure, the projection optical system in the description of the invention is driven in the XY direction by a linear motor (not shown) that constitutes the aforementioned wafer stage driving section 24; and the z tilt stage 3G, which is a system The Z tilt drive mechanism (not shown) that is placed on the flat mouth of the lamp and constitutes the aforementioned wafer stage driving section is oriented in the z-axis direction and the tilt direction opposite to the χγ plane (the direction of rotation about the X-axis ... direction) And the direction of rotation around the γ-axis ⑽ direction)) trace driver. A wafer holding portion 70 for holding the wafer W is mounted on the z-tilt stage 3G. The wafer holding portion 70 is substantially composed of a three-layer structure. The uppermost member 22 constituting the wafer holding portion 70 is shown in the plan view of FIG. 2 and includes: a circular plate-shaped abutment portion 26; and a plurality of protruding rods 32 attached to the abutment. Areas with a predetermined area of a central portion of a ring-shaped area of a predetermined width near the outer periphery of the upper part (the surface above the paper surface in FIG. 2) of a predetermined area are provided at predetermined intervals as supporting members; and the annular convex portion (15 to (Referred to as "ring part") 28, which is located near the outer periphery in a state that surrounds the uranium region where the plurality of rods M are arranged. The structure member 22 is made of a material with a low degree of expansion, such as ceramics, which has a certain degree of elasticity, and the surface of the material such as Taoman, which is disc-shaped as a whole, is useful in the form of a body. The base plate portion 26 is a circular plate 20 constituting the bottom surface portion, and a ring portion 28 and a plurality of rods 32 provided on the base plate portion 26 are sold out. Fig. 3 is an enlarged view of the wafer holding portion 70, and specifically shows the arrangement of the rod 32 and the ring portion 28 described above. As can be seen from the third figure, the outer diameter of the aforementioned ring portion ^ is only slightly smaller than the outer diameter of the wafer W (illustrated by two dotted lines (imaginary lines)). The next page is drawn. Note and use continuation page) 200301538 玖, description of invention Invention description Continuation page is small, for example, set to about 1mm to 2mm, and when wafer W is placed on it, in order not to create a gap with the back of wafer W, The processing is horizontal and flat. The description lever 32 has a projection shape in which all front end portions lie substantially on the same plane as the aforementioned ring portion 28. The rods 32 are arranged on the base portion 26 at predetermined intervals. In FIG. 3, most rectangular areas SA arranged in a matrix shape indicated by two dotted lines (imaginary lines) are a plurality of short-circuit areas formed on the wafer w. In Fig. 4A, a portion 10 corresponding to one of the short-circuit areas SA is taken out for display. FIG. 4B is a cross-sectional view of a portion of the wafer holding portion 70 corresponding to the b-b line cross-section shown in FIG. 4A. In FIG. 4A, the four divided areas SSAi to M arranged in the up-down direction (scanning direction) in the short-circuit area SA in the figure are the illumination areas on the wafer w illuminated by the illumination light IL (about projection optics) The exposure area IA (refer to FIG. $) Of the system U, which is lighter than the aforementioned illumination area, is approximately the same size and shape. Here, the exposure area IA is set to a rectangular area of 8 km and 25 mm, for example. It can be seen from the combination of FIG. 4A and FIG. 4B that the lower part of the aforementioned component 22 is fine 20

Each segmented area in the segmented area SSA is divided into eight equal parts (non-scanning direction quartered, bidirectional direction divided) corresponding to each SSB§, and the piezoelectric elements p as driving elements are respectively placed, and borrowed from these The second layer of the p-shaped intermediate layer of the piezoelectric element. Evening 3 _ It can also be known that each piezoelectric element P is composed of a product i.e., and it is, for example, a Pb of a predetermined thickness (Naruto page (when the invention is not enough, please note the use of display) 17 200301538 The invention is described in the following pages: T1) 03) 21 and an internal electrode 23 composed of a silver-peak-alloy alloy with a predetermined thickness are alternately laminated. Here, the thickness of the piezoelectric element p is determined by the required driving amount, and is 104 times the thickness of the driving amount. The required driving amount is determined based on the flatness of the wafer or the 5-point depth of the focal length of the projection optical system pL. For example, if the required amount is ... The thickness of the piezoelectric element is 1 mm. In addition, if the required driving amount is 0, the thickness of the piezoelectric element is & 2mm, and at this time, the piezoelectric element on one side can be overlapped with two layers, and a single C electrode with a thin thickness can also be used. The element is not limited to the above-mentioned materials for the piezoelectric element p, and ferroelectrics such as BaTi03 and (NaK) Nb03, which are generally used as piezoelectric element materials, can also be used. The thickness of the wafer holding portion 70 as a whole including the piezoelectric element described above is 15 mm to 20 mm. Most of the internal electrodes 23 of each of the foregoing piezoelectric it pieces p are drawn out to the two end surfaces alternately every other layer 15 and are respectively connected to individual end surface electrodes (not shown) formed of a coffee alloy, for example, formed on the two end surfaces. And one end electrode of each piezoelectric 7L piece p is connected to the following amplifier (AMp) through a conductive processing material (circuit material) not shown, and the other end electrode is not shown through The conductive processing material (circuit material) is connected to a common electrode (not shown). In addition, a specific configuration of a driving device and the like for driving the aforementioned piezoelectric elements P will be described below. The aforementioned piezoelectric elements p are respectively fixed to a base member 42 for forming a third layer (lower layer) in a matrix arrangement. When manufacturing the wafer holding unit 70 configured in this way, it is based on the above-mentioned base 0 continuation page (when the description page of the invention is insufficient, please note and use the continuation page) 200301538 The description of the invention description continued page The second layer composed of the aforementioned plurality of piezoelectric elements p is formed on the member 42, and the member on which the abutment portion 26, the rod 32, and the ring portion 28 have been integrally formed is fixed in a predetermined positional relationship as described above. twenty two. At this time, the members of the adjacent layers are joined with, for example, an adhesive. Finally, the upper surface of the majority of the rods and the upper surface of the ring portion µ, which are the contact surfaces with the 5 wafers W, are finally subjected to a polishing process using a polishing device, abrasive grains, or the like. As a result, the upper end faces of the plurality of talents 32 and the upper face of the ring portion 28 are located substantially on the same plane. Returning to FIG. 2, three through holes (not shown in the figure) near the apexes of the slightly regular diagonal shape at the center P of the abutment member 42 and the abutment portion 26 (not shown) ) Is formed in a state where there is no mechanical interference with the rod 32 and the piezoelectric element P. The cylindrical upper and lower moving rods (center raising type) 34a, 34b, and 34c are respectively inserted into these through holes, and the one central raising and lowering moving rods 34a to 34c are passed through to form the wafer as shown in the figure. The up-and-down movement mechanism (not shown) of the table driving unit 24 moves up and down (up-and-down movement) at the same time in the up-down direction (z 15-axis direction). Since the wafer loading and wafer unloading are carried out, the centrally-raised vertical levers 34a to 34c are driven by the vertical mechanism, so it can be supported from below by three centrally-raised vertical levers to 34c. The wafer w is moved up and down while supporting the wafer w. In addition, the upper part of the abutment part 26 is shown in FIG. 2, and most of the supply discharge ports 36 are along the direction radiating from the vicinity of the center part of the upper part of the abutment part 26 (three have a center of about 120 degrees). The radial direction of the angular interval) is formed at predetermined intervals. The supply / exhaust ports 36 are also formed at positions which do not mechanically interfere with the aforementioned rod 32. The supply and exhaust ports 36 are respectively provided on the second page of 0 and 0 (the description page of the invention is insufficient, please note and use the continuation page) 200301538 玖, description of the invention 5 10 15 of the aforementioned piezoelectric element P interference The piping at the respective positions is connected to the supply and exhaust paths 38A, 38B, and 38C formed inside the abutment member 42, and the supply and exhaust paths 38A, 38B, and 38C are connected to the abutment. The outer peripheral surface of the member 42 to be described later, the supply and exhaust branch pipes 40a, 40b, and 40c of the supply and exhaust mechanism 80 are in a communicating state. As shown in FIG. 2, the wafer holding unit 70 configured as described above is connected to the supply / exhaust mechanism 80 and the cooling mechanism 72. The supply / exhaust mechanism 80 includes a mechanism for holding and holding the wafer W. A vacuum suction mechanism is provided on the upper end surface (upper end portion) of both the plurality of rods 32 and the ring portion 28, and the wafer W is placed on the wafer holding portion 70, and the plurality of rods 32 and the ring portion are borrowed. 28 is supported from below, and the cooling mechanism 72 is a temperature adjustment device for adjusting the temperature of at least a part of the plurality of piezoelectric elements P and a driving device for driving the piezoelectric elements P. The supply / exhaust mechanism 80 includes a first vacuum pump 46A, a vacuum chamber 46Ba, a second vacuum pump 46Bb, a supply gas device 46C, and a supply / exhaust pipe 40. The supply / exhaust pipe 40 is used to connect the first vacuum pumps. 46A, a vacuum chamber 46Ba, a second vacuum pump 46Bb, and a supply gas device 46C are connected to the supply and exhaust passages 38A to 38C, respectively. The supply and exhaust pipe 40 includes a supply and exhaust pipe 40d, three supply and exhaust branch pipes 40a, 40b, and 40c branched from one end of the supply and exhaust pipe 40d, and the supply and exhaust pipe 40d. The first exhaust branch pipe 40e, the second exhaust branch pipe 40f, and the third exhaust branch pipe 40g branched into three at the other end.

Made up. On the first exhaust branch pipe 40e and the above-mentioned supply exhaust pipe 40d 0 Continued pages (when the invention description page is insufficient, please note and use the continued page) 20 20 Invention description 玖, the opposite side of the invention description The department is connected to the first through the solenoid valve VI and the first? The exhaust branch pipe 40f is in phase with the aforementioned supply exhaust pipe 40d.

A vacuum chamber 46Ba is connected to the opposite end portion through a solenoid valve V2. A second vacuum pump 46Bb is connected to the vacuum chamber 46B. In addition, a gas supply device 46C is connected to the front side of the gas branch g 40 g on the opposite side to the aforementioned supply and exhaust main pipe 40d through a solenoid valve V3. ίο 'Although not shown in the figure, a part of the supply pipe main pipe 40d is provided with a barometer according to the measurement value of the 4 milk pressure gauge. The main control device 20 of Fig. 1 controls the clothes set 20 according to the measured value of the barometer and the load information of the wafer, unt δδ ^ ν. To control the switches of the solenoid valves VI and the vacuum pump 46A, 46Bb and the gas supply device will be described in detail later. 15 Recognition of evil is based on the first vacuum pump, solenoid valve V1, and supply exhaust pipe 4 respectively. The piping of the supply exhaust path emblem to 38C and the supply exhaust port 36 constitutes a vacuum suction mechanism as a rhyme mechanism. 20 Ref. Although the cooling mechanism 72 just mentioned is shown in the second block for the convenience of illustration, in fact, various configurations described below can be adopted. For example, a configuration may be adopted in which the f-channel is directly formed in the aforementioned lens section 7G, and the cooling liquid flows through the official channel to perform a wafer holding section (mainly most of the Qing electric components p and its driving clothes). 'Or arrange the Pitiel element and the like on the back of the abutment member 42 which constitutes the aforementioned wafer holding portion 7G, and the Piti 0 will be continued on the next page (Invention says that it is not enough _, please note and use the Continue Page) 21 200301538 Invented the invention of e-brightness, continued description of the pager element, etc. and most piezoelectric elements. And its driving device The structure in which the back surface of the wafer holding portion 70 is exhausted to the outside is described. In addition, it is also possible to form the aforementioned abutment member 42 by using a high heat conductive material, and at the same time, a heat sink is disposed on the lunar surface side of the base member 42 to generate the aforementioned multi-electrode element p 5 and its driving device. The heat is absorbed to the back surface side of the wafer holding portion 70, and the heat absorbed is passed through a heat sink to waste heat to the outside. Returning to FIG. 1 ', in order to not only move the lamp base 31 in the scanning direction (γ-axis direction), but also perform scanning exposure to most of the short-circuit areas where the exposure area IA is relatively moved on the wafer, the structure is also Can move 10 times in the non-scanning direction (x-axis direction) perpendicular to the scanning direction to repeat the action of scanning (SCan; scanning) each short-circuit area on the exposure crystal ® w and for down-short exposure Step-by-step action of moving to the start acceleration position. The position of the aforementioned wafer stage WST in the XY plane (including rotation (0Z rotation) about the z-axis 15) is transmitted through the moving mirror 17 provided on the aforementioned Z tilt stage 30, and by the aforementioned wafer laser interferometer System 18, and detected with a resolution of, for example, 0.5 nm to 1 nm. Here, in fact, although a γ-moving mirror 7γ is provided on the aforementioned Z tilt table 30 as shown in FIG. 2, it has a reflecting surface perpendicular to the scanning direction (the y-axis direction); and χ shift 20 Mirror 17 ×, which has a reflecting surface perpendicular to the non-scanning direction (X-axis direction). In contrast, the aforementioned wafer laser interferometer system] 8 is also provided with a gamma interferometer, which is used to move in the aforementioned Υ The mirror 17Υ irradiates the interferometer beam vertically; and the X interferometer is used to illuminate the interferometer beam perpendicularly to the X moving mirror 17χ, but in FIG. 1, the moving mirror 17 0 is representatively Continued pages (note that the invention description page is insufficient, please note and use the continuation page) 200301538 Rose, invention description issued ^ ί_continued page, wafer laser thousand, bucket ^ -------, // y Instrument system 18 to indicate this. In addition, the γ interferometer and the χ interferometer of the wafer laser dry I instrument system 18 are yoke axis quotimeters having a plurality of length-measuring axes, and the wafer stage WST (萑Children's Z tilt table 30) rotation (0 z rotation (shake)), 0y rotation (yaw) about the Y axis rotation, and h rotation (rolling) about the X axis rotation. Also, "Li Shu X and Y moving mirrors 17X and 17" can also form a reflecting surface on a member different from the aforementioned Z tilt table 30, and fixed to the end surface (side surface) of the Z tilt table or m tilt table 3G to form a reflective surface. The position information (or speed information) of the round table WST may be supplied to the aforementioned platform control device 19 and supplied to the aforementioned main control device through it. In the platform control device 19, it is based on the above-mentioned main control device 20, and according to the aforementioned position information (or speed information) of the aforementioned wafer table WST, sub-via the wafer table driving section 24. Control the wafer stage wst. In the exposure apparatus 100 of this embodiment, as shown in FIG. I, a focus position detection system consisting of an irradiation system 6Ga, a light receiving system, and a system _ is provided, and the X ′ 6 is known as the radiation system 6. a is an imaging light beam having a light source controlled by the aforementioned main control device to be turned on and off and used to illuminate the imaging surface of the projection optical system pL from the optical axis AX obliquely so as to form most rod holes or slit images. Light receiving system_ is used to receive the reflected light beams on the surface of the wafer W of the imaging beams. The detailed configuration of a multi-point focus position detection system similar to the focus position detection system (60a, _) of the present embodiment is disclosed in, for example, Japanese Patent Laid-Open Publication No. Hei 6-2834403 and the corresponding U.S.A. Patent Publication Gazette No. 5,448,332 and the like. 0 Continued pages (When the invention description page is insufficient, please note and use the continuation page) 200301538 The description of the invention description continued page t The internationally specified country or the designated country of the selected country To the extent permitted by law, the disclosures in the aforementioned Gazette and the US Patent Publication Gazette are cited as part of the description in this specification. In the exposure apparatus 100 of this embodiment, a pattern plate having slit-like opening patterns arranged in a matrix arrangement of four rows and four columns is provided inside the irradiation system 60a for constituting a multi-point, 5-point position detection system. And the imaging beams emitted from each opening pattern are respectively formed above the surface of the wafer W to form a gap image of four rows and four columns in a matrix arrangement as shown in Fig. 5 S $ 11 主 ί &44; and can be individually received The 4 × 4 light receiving elements of the reflected light beams from the 16 slot images 1 1 King> 44 are provided in the aforementioned light receiving system. In this way, since the slit images S11 to S4 correspond to the light receiving elements, the slit images Std s are also referred to as focus sensors S11 to S44 in the following. Qian Yu believes that the 2 x 4 focus sensors inside 15 ^ 4 are the tracking sensors used for the focus and level control of the wafer W, and are located on the outside of the above-mentioned exposure area IA in the scanning direction of four each, a total of eight The focus sensors u s14 and S4J S44 are the so-called pre-reading = should be the following. The focus sensors Sn to S34 are also called follow-up sensors, and the focus sensors Sl] to Sl4 and S41 to S44 are also called pre-readers. 200. Each focus sensor is an output of S, that is, the photoelectric green replacement number from the light receiving element is supplied to the aforementioned main control device 20 through a selection circuit and a signal processing circuit (not shown). At this time, the signal processing circuit has 12 numbering output circuits, and the aforementioned main control device 20 is based on 16 focus sensors § 0 Continued pages (when the description page of the invention is insufficient, please note and use the continued page) 24 200301538 _Stomach pick the biggest 12 « , Point and surface device s, and _ the output of each s to calculate the defocus amount of the imaging points of each slot image. Then 'under the instruction of the main control split 2 (), in the aforementioned platform control device 19' described later During scanning exposure, etc., in order to minimize the focus deviation signal (defocus signal) from the light receiving system 60 described above, for example, the focus deviation from the 3-curve signal, the wafer stage driving unit 24 is used to control the Z tilt stage 30. And the movement of the wafer holding portion 70 in the z-axis direction and the inclination to the XY plane (that is, θ χ rotation around which the X car is rotated and rotation around the γ axis). That is, by using the aforementioned multiple The point focus position detection system (H) (60a, 60b) controls the movement of the above-mentioned z-tilt stage 30 and the wafer holding unit 70, so that the scanning light in each short-circuit area is scanned as much as possible. The imaging surface of the projection optical system PL in the irradiation field (exposure field ia that has an imaging relationship with the lighting field) is the same as the surface of the crystal uj w (short-circuit field) (in other words, the surface of the short-circuit field is set to projection in the exposure field IA) Optical 15 Series Autofocus (autofocus) and autolevel. In this way, the driving system is formed by the aforementioned wafer stage driving section 24 and platform control device 19. In the above-mentioned autofocus and autolevel, Although the defocus of the average plane within the exposure area of the wafer w surface can be adjusted to be extremely small, when the surface of the wafer 20 is partially uneven, the entire area of the wafer w surface including the uneven portion is dispersed. The focus is almost zero (that is, when scanning exposure, the surface of each short circuit area is often set within the focal depth of the projection optical system pL) 'or it is difficult to flatten the unevenness itself. — Considering the above problems, in this implementation In the form, by providing the above-mentioned multiple pages (the fiber page is not peng, but the female continuation page is hidden) 玖, the description of the invention turns over the continuation page of the piezoelectric element P ', and the main control «Set 2Q through the first The driving device 85 shown in the figure can individually drive the piezoelectric element p, and can cope with the aforementioned situation. Next, a specific configuration and the like including a driving device 85 including a circuit system for a plurality of piezoelectric elements p will be described. The following is a simplification of explanation. The intermediate layer of the wafer holding portion 70 is composed of MX N piezoelectric elements Pπ to Pmn arranged as shown in FIG. 6, and M × n is a multiple of 8. FIG. 6 In the matrix, the piezo element blocks BL arranged in a matrix of 8 rows and 4 columns indicated by thick lines correspond to the respective short-circuit areas on the wafer W, and are arranged in 2 rows and 4 in the scanning direction side by side in each block BL. The four divided blocks formed by the listed piezoelectric elements P correspond to the irradiation areas (exposure areas) IA of the illumination light on the wafer w, respectively. In Fig. 7, the aforementioned driving device 85 for driving the piezoelectric element groups p 丨 丨 to pMN is shown together with the aforementioned main control device 20. As shown in Fig. 7, the driving device 85 is provided with a driving circuit 901 to a selection signal output circuit 92 for driving 2: 4 piezoelectric elements p constituting each divided block. —The aforementioned drive circuit 9U ′ is connected to the output of the 6-bit data of the front and the main control device 20 through the i-th bus brain, and the output of the 8-bit data of the second bus BS2 connection. Furthermore, the aforementioned driving circuit Wq is connected to 92 terminals of the front-selection-selection-output circuit through 2k signal lines ^ respectively. The simple selection output circuit 92 uses k signal lines cs to connect to the output port of the yield data of the main control device μ. At this time, 2k = q = MN / 8 is established. 、 Next page (Insufficient invention pages, please note and continue) 200301538 玖, Invention description, Invention description, Continuing, Figure 8 shows the driving circuits of most driving circuits 90 to 100%. 9 (^. As shown in FIG. 8, the driving circuit 9 (^) includes: a switching circuit SW, whose input terminals are connected to five of the six signal lines XI, X2 for forming the first bus bar bs 1 described above. , Yl, Y2, Υ3, Y4; eight digital · analog converters (D / A converter ^ / AcD / As, which are respectively connected to the eight output signal lines of the aforementioned switch circuit SW respectively; And the eight gains are AMP ^ AMPs, which are individually connected to the output terminals of the aforementioned eight D / A converters D / A to D / A8. In addition, the aforementioned switching circuit sw is provided with a 10-minute selection signal. One of the 2k output signal lines of the output circuit 92 selects the selection signal output line SL! To input the selection signal. The switch circuit SW can be connected to the six signal lines XI, X2, for example, in the connection relationship shown in FIG. 9. Eight of Yl, Y2, Y3, Y4 and circuits GT1 to GT8 and output 15 of the AND circuits GT1 to GT8 are one The eight input circuits are composed of GT9 to GT10. The inputs of the other ends of the AND circuits GT9 to GT16 become selection signals input through the selection signal output line SL !. The aforementioned six signal lines are divided into X groups ( Χ1, χ2), Y group (Y1, Y2, Υ3, Υ4), and input "0" or "i" 20 from the signal lines that respectively constitute each group. Figure 10 shows the pair to indicate the pair at this time. Truth table of the relationship between the input (0,]) of the signal lines of the X group (XI, χ2) and the Υ group (Y1, Υ2, Υ3, Υ4) and the output of the circuits GT1 to GTS (0, 1}. As shown in Fig. 10, by combining "0" or "1" input to the χ group signal line and "0" or "1" of the Υ group signal line to the round 1 to select and call 0 to continue the page ( The invention is not enough to make use of the temple, please note f and make the title page) 200301538 Invention description_ any of the GT1 to GT8, the invention description road, ^ ~-"the output of the fly, the choice and the circuit is ", And the output of the other and circuit is. With the words" t, and the pair of electrical signals ^ GT1 to GT8 individually from the x group signal line and Y group signal line input signal is Γ1 ", then the and The output of the circuit is%, and the output of the other circuits is "0". Then, when the selection signal input to the switch circuit sw through the selection signal output line% is "1", the circuit GT1 to The output of 决定 determines whether to activate eight D / A converters. From heart to heart, any D / A converter. Also, when all six signal lines are "0", 10 or 'constitutes the signal lines of the X group. When all are "0" or the signal lines constituting the γ group are all "0", the outputs of all sum circuits GT1 to ⑽ will become "0". Returning to FIG. 8, in the D / A converters D / Ai to D / As, in addition to the “0” 5 go Γ1 signal from the aforementioned switching circuit SW, it will also pass from the aforementioned 15 main control device 20 through the second Bus BS2 input driving voltage data. The driving voltage data is input only to the d / a converter which is activated by the signal from the aforementioned switching circuit sw among the aforementioned D / A converters d / Ai to D / As. That is, the D / A converter is supplied in accordance with the start signal from the aforementioned switching circuit sw. ί〇 In the aforementioned D / A converter 〇 From! The output sections to d / as are individually connected to the amplifiers AMP ^ to AMPg, and furthermore, the output sections of the amplifiers AMP to AMPS are individually connected to the piezoelectric elements p " to? 24. That is, the aforementioned driving circuit 90! Is structured as described above, and by selecting a 0-continuation page (when the description page of the invention is not enough, please note and use the continued page) 200301538 When SL1 is selected (when the selection signal sli is "〗" (h level)), based on the combination of two X-group signal lines that are the i-th signal line, the first Uu (l, G) of the magic, and Input the second signals (1, _ combination of four Y-group lines Y1 to Υ4, which are the second signal lines, respectively, to individually decide that they do not correspond to each of the piezoelectric elements used to form the divided block to P24. And sigh as the output of the aforementioned AND circuits GT1 to GT8 with 2 × 4 switches (1′〇) J «drive 2 × 4 pieces of Pm to Pm individually through D / A converter and amplifier. At this time, the voltage The electric element and the PM are respectively transmitted through the second bus BS2 and are driven according to the driving voltage data given by the main control device 1010. Returning to FIG. 7, the selection signal output circuit% sets the output signal of the moving circuit 90 specified by the selection signal inputted from the main control device 20 through the signal line cs to Γ ″ (H level), and For other drivers: the output signal of the circuit is set to "0" (L level). Here, the designation (selection) of the driving circuit of the main control 15 device 20 according to the foregoing is performed based on, for example, a combination of “0” and “Γι” input to the k signal lines cs, respectively, and the signal output circuit 92 is selected. According to the input signal and the selection signal of one of q driving circuits through the output signal line of the force bar. ° The remaining driving circuits 902 to 90q are also composed of the aforementioned driving circuit% 20. 7 Next, the operation of the exposure apparatus 100 in this embodiment during mounting and unloading of the wafer holding section 70 will be described. When the wafer W is mounted, the solenoid valves V1 to v3 of FIG. 2 are all closed, and the supply of the gas 2 by the aforementioned supply and exhaust mechanism 80 is stopped. (This is not enough, please ask Note and use the continuation page) ^ 200301538 Rose, invention description Turn over the continuation page and exhaust operation. ----- If the wafer w is transferred to the wafer holding portion 70 by a wafer mounter (not shown), the M 5 10 15 flat mouth control device 19 will pass through the main control device m as shown above. The upward / downward movement mechanism (not shown) raises the center raising type vertical movement levers 34a to 34e. Here, if the amount of ascent of the above-mentioned center-up and down levers 34a i 34e reaches a predetermined amount, the wafer W on the wafer carrier will be picked up and transferred to the above-mentioned center-up and down levers ... to%,

And the wafer mounter will pass over the wafer holding portion 70. Thereafter, the center raising type vertical movement rod 3 is lowered to 34c by the platform control device 19 to place the wafer w on the wafer holding portion 70.

As described above, if the wafer W is placed on the wafer holding section 70, the main control device 20 just opened will open the solenoid valve V2 communicating with the high-speed exhaust vacuum of FIG. 2 to 46Ba, and quickly The ground attracts (exhausts) the gas in the space surrounded by the base portion 26, the ring portion 28, and the wafer w. At this time, in this embodiment, by using the vacuum chamber 46Ba, the suction pressure is set to be as high as 800 hPa (high vacuum state) to increase the output. In this way, the wafer mounting is terminated by quickly holding and holding the wafer W. Thereafter, the main control device 20 closes the solenoid valve V2 of FIG. 2 and opens the solenoid valve VI that communicates with the first vacuum pump 46A that is normally used. Then, the wafer W is sucked and held by the attraction force of the first vacuum pump 46A. Here, during the period from the time when the wafer W is sucked and held on the wafer holding portion 70 to the time when the wafer W is taken out, it is not necessary to adjust the accuracy such as the lateral deviation of the wafer W due to the movement of the wafer table WST and the like. The attraction pressure (adsorption) of the adverse effect, and in this embodiment, it will be the i 0th continuation page that is frequently used (when the description page of the invention is insufficient, please note and use the continuation page) 30 200301538 Rose, invention Explanation 'Description of the Invention The suction pressure of the continuation pump 46A is set to, for example, 5 hpa to _333.2 hPa (low vacuum state) to suppress the deformation of the wafer W caused by vacuum adsorption to a minimum. In addition, the time required for wafer mounting can be shortened by making the wafer W different from the suction pressure when the wafer W is mounted on the wafer holding section 70 and other operations. On the other hand, when the wafer w is unloaded, the main control device 20 first closes the solenoid valve vb of FIG. 2 and stops the suction operation. Next, the main control device 2G raises the aforementioned centrally-raised up-and-down moving lever to 34c to raise the pre-sharp-shaft—the supply gas valve V3 is opened, and the gas is blown toward the bottom surface of the wafer w10. Thereby, the aforementioned vacuum state is immediately released. If the above-mentioned center-up and down levers 34a i 34e are raised by a predetermined amount, the wafer w supported by the above-mentioned lever 32 and ring portion 28 will be picked up and transported to the center-up and down lever 34 & to the ground, so it is not shown in the figure. The wafer unloader will enter the lower side of the wafer W. At the same time, because the centrally raised up-and-down lever% to b 34c drops, the wafer w will be transferred from the centrally raised up-and-down lever to ... . Then, the wafer unloader is passed over the wafer holding portion 70, and the wafer unloading is completed. In this way, when the wafer w is unloaded from the aforementioned wafer holding portion 70, 'the gas is blown to the bottom surface of the wafer', and the unloading time of the wafer can be shortened. 20 As is clear from the above description, in this embodiment, the substrate holding device is constituted by the wafer holding portion 70, the supply / exhaust mechanism 80, and the driving device δ 5 described above. In addition, when using vacuum ultraviolet light or the like as the illumination light, although the gas on the light path of the illumination light is highly translucent with the illumination light such as helium (absorption illumination_Jia page) Continuation sheet for females) 200301538 5 10 15 20 发明, description of the invention _ the characteristics of light are lower than air, etc.), but in this case 1 ^^^ the gas on the bottom surface of the wafer should still be the light of the light Highly sexual gas. Also, the amount of gas blown to the bottom surface of the wafer should be small so as not to float the wafer. According to the exposure apparatus 100 of this embodiment, similarly to the usual scanning procedure, crystals such as reticle alignment, line measurement of a wafer alignment system (not shown), and EGA (enhanced spherical alignment) are used. After the circle adjustment is completed, the exposure is performed in the step-and-scan mode as described below. In addition, the above-mentioned reticle adjustment, baseline measurement, etc. are disclosed in detail in, for example, Japanese Patent Laid-Open Publication No. 746876468, and its corresponding U.S. Patent Publication No. 5,646,413, ^^ EGA It is disclosed in detail in Japanese Patent Laid-Open Publication No. ^ 4 and the corresponding U.S. Patent Publication No. 4, No. 6Π and the like. To the extent permitted by the domestic laws and ordinances of the designated designated country or the selected selected country for the purpose of the present invention, the disclosures in the aforementioned gazettes and the corresponding U.S. Patent Gazette licenses corresponding thereto are incorporated herein by reference. Part of the record. &Quot; That is, in the aforementioned platform control device 19T, as shown in the 4th description of the main control device, according to the wafer adjustment, ^^ ^ 〇 ,,, °, through the aforementioned crystal The round table drive unit 24 moves the wafer stage WST to the first short-circuit area (W-th, short-circuit) on the wafer W, which is indicated by the ruler 1 at the angle Z, and the acceleration start position of exposure. After w, The platform control device is connected to the "Y & Control" reticle interferometer 16 and the wafer laser interferometer system 18 妗 μ △ ^ j, and drives the part H and the wafer through the reticle k The stage drive section 24 and the wafer stage WST in the γ-axis direction. "Stage stage RST _ times the page description page is not enough, please note and use continued ^ (movement when asked), and carry out 32, one, invention description nwei200301538 玖, description of the invention description of the invention continued on the first page of the circle W Scanning exposure in the road area, and reducing the circuit pattern of the reticle R to the short-circuit area through the projection optical system PL. In this embodiment, the reticle interferometer 16 and 5 yen are used. The field emission interferometer system 18, the reticle stage driving unit 14, the wafer stage driving unit 24, and the platform control device 19 constitute a reticle R (reticle stage RST) and a wafer W (wafer 纟 WST). Simultaneously facing the illuminating light ^ for scanning scanning. Here, during the aforementioned scanning exposure, because the illumination 1 area (exposure area) U on the wafer, the surface of the wafer w must be exposed in a state substantially consistent with the imaging surface of the projection optics and the system PL. Therefore, the correction of the auto level, auto focus, and flatness of the wafer W according to the output of the aforementioned focus position detection system (60a, _) will be performed by the aforementioned main control vibration setting as described below. That is, the aforementioned main control device 2 (M is selected in advance through a sensor selection circuit (not shown), for example, a person tracking sensor U ~ and a pre-read sensor Sn to Si4 according to the movement direction of the wafer ^ to ~ Total = focus sensors S. Here, the wafer w is scanned in the + ¥ direction (SD arrow direction in Figure 5), and the aforementioned sensor cores are read in advance to 8 in total '1, pp t 44 day

Then, when the relative scanning of the reticle stage RST and the wafer stage WST < Y sleeve side: is started, and the front end of the short-circuit area on the wafer w reaches the pre-reading sensors 341 to S44, the aforementioned main control The device 2q will find the average value of the measured values of the sensors S41 to S44 in advance according to the example. "Β'ΤΜ; Enter the page (if the description page of the invention is insufficient, please note and use the continuation page) / 妾) 200301538 Disclosure of the Invention ... A broken wafer W is in any of the + direction and + direction of ^ and ^^, and according to the result of the judgment, the aforementioned platform control unit 19 is given, such as to modify the fragment.

Jiao's instructions. Thereby, through the platform control device 19 and the wafer Z 5 10 15 20 moving part 24, the aforementioned Z tilt table 30 will be driven in the + z direction or the -z direction, and the surface of the wafer W will be set to the projection optical system. Near the approximate plane of the PL curved surface. Then, the scanning of the wafer W is continued, and at about the same time as the exposure is started, the positions of the surfaces of the wafer W facing the projection optical system pL image surface corresponding to the following a to e are performed. a · When the number one on the wafer W! When the front end of the short-circuit area reaches the Wth tracking sensors S31 to S34, the aforementioned main control device 2q will calculate an approximate straight line based on the measurement values of the tracking sensors S31 to S34, and the approximate straight line will be related to the parallel to the projection The target value of the level control of the wafer W_scanning direction of the approximately curved plane of the image curved surface of the optical system PL is given to the aforementioned platform control device f19. Thereby, by the platform control device 19 and through the aforementioned Japanese yen stage driving unit 24, the front shape 7 and 5 forces, y 1 (the Z tilt stage 30 will be driven in the direction), and the non-scanning of the wafer W is performed. Level control of direction. After W, 'after the level control', the aforementioned main control is difficult to set 20 again :: the pre-measured values of the "reactors S31 to & The difference Δ_ = 1, 2, 3, 4) ′ from the measurement of Sy to Sy is calculated according to the difference, and corresponds to the dissatisfaction with the driving circuit 90 as described above. Its driving electricity. For the sake of convenience, the drive circuit is set to 90ν), and the four piezoelectric donation pages corresponding to the positions of 0, 2, and 11 S31 to S34 are used separately. (Continued) 34 200301538 玖, description of the invention Description of the invention, continued elements P ij to P ij + 3. Here, is it considered that the aforementioned piezoelectric elements Pu to Pπ + 3 in the aforementioned driving circuit 90v are the same as those in the driving circuit 901 in FIGS. 7 to 9? Corresponding to 11 to Pi4 ', and in the following description, the symbols used in Figs. 7 to 9 are still used for the symbols of the D / a converter and the like. At this time, the driving system of the aforementioned piezoelectric elements Pij to pij + 3 proceeds as follows. That is, as shown in the timing chart in FIG. 11, at time t0, the driving voltage data is sent to the aforementioned piezoelectric element pfj through the second bus BS2 (苐 1 driving voltage data). Then, at time t !, the selection signal 81 ^ opposite to the driving circuit 90v is changed from L-level to H-level, and at the same time, the D / A is converted into D / Ai signal (D / A converter start signal (here, according to the truth table in Figure 10, the input of signal lines XI, Y1 is Η level, and the input of other 15 signal lines is L level )), Thereby starting the D / A converter D / A !. Such as

As a result, at the same time, the first driving voltage data is latched to the aforementioned D / A converter D / A !. The first driving voltage data is converted into analog data by the D / A converter, and after being amplified by the amplifier Ampl, the first driving voltage data is applied to the aforementioned piezoelectric element PZ. So, can this piezoelectric element be used? " of 20 drivers. Then, at the time of day guard h, all the levels sent through the j-th bus BS1 are set to dagger level, and start from the aforementioned second bus BS2: j package element Pij + 1 sends the driving voltage data (the 2 Driving voltage data:) — ^ ❿ square inch "T3 Rishou" sent to start the connection to the aforementioned piezoelectric 0-bin page (the description page is not enough, please note and use the continuation page) 200301538 发明, invention Description of the invention description Continued page Signal of D / A converter D / A2 of D5 + (D / A converter start signal (here, the input of signal lines XI, Y2 is H level, and other signal lines The input is L level)) to start the D / A converter d / a2. In this way, at the same time, the second driving voltage data is latched to the aforementioned D / A converter D / A2, 5 and The second driving voltage data is converted into analog data by the d / a conversion ϋ d / A2, and then amplified by the amplifier AMI > 2 and applied to the aforementioned piezoelectric element + 1. In this way, the piezoelectric element can be performed The driving of the dagger + 1. Hereinafter, similarly, the third driving voltage data is latched to the D / A converter D / A3 connected to the aforementioned piezoelectric element pij + 2, and the fourth The driving voltage data 10 is flash-locked to the d / a converter DA connected to the aforementioned piezoelectric element ^ + 3. Then, each driving voltage data is converted into an analog signal by each D / A converter, and then increases. The amplifier is amplified and applied to each piezoelectric element, and the aforementioned piezoelectric elements Pi j + 2 and Pi j + 3 are driven. 15 If again, here, the maximum measured value ΔZϋ = 0 is measured. The driving voltage data of the corresponding piezoelectric element corresponding to the induction sensor is zero. In the above description, although the driving voltage data (including zero) is transmitted to the position corresponding to the tracking sensors S3i to S34 according to the difference ~ The four S electrical elements ρπ to Pi; + 3, but of course the D / A converter connected to the piezoelectric element that does not need to change the driving voltage data is transmitted through the aforementioned i-th bus BS1 to keep the D / A converter closed. The signal can also be used. Fang; This 'Using Brother 4B picture and Digang, #,' Mouth's brother picture, to explain one example of the drive of the piezoelectric element from the dust element to Pu + 3. This

The z-positions of the areas directly above Pn to U + 3 are obtained from the measurement values of the aforementioned tracking sensors s31 to S34. The situation in Figure 4B is the next page (when the invention is inadequate for use, please note and make the title page) ^ 20 200301538 发明, the description of the invention Pu + 1 opposite shore-- The device value is the maximum "Zmax. This result is △ & 〇, and the momentum of the aforementioned piezoelectric element p. Becomes zero. The remaining pressure 1… drive U U P P, Pw” Pu ”are respectively according to The difference is driven by △ ζ, and the surface shape of the wafer W shown in Figure 14B is correct.

As for the wafer w S in the non-scanning direction, as shown in FIG. 4C, the shape U) is a substantially flat shape. That is, in this embodiment, the piezoelectric element is individually driven to correct the unevenness of the surface of the crystallite W in the exposure area IA to the extent that it cannot be corrected in the wafer W level. c • But as a result of driving, although the flatness of the surface of the wafer W will be improved, it is also conceivable that the overall shift from the approximate plane of the image curved surface of the projection optical system PL toward the Z axis direction. Here, in the above-mentioned case, the main control device 2G just described is based on the measured values of these tracking sensors n s31 to s34, and adjusts the defocus amount in the same manner as in the aforementioned pre-reading. 15 Here, the actions of a • to c • described above can actually be performed in a very short time. d · Then, when further scanning and exposure of the wafer is performed, and the front end of the first short-circuit area on the wafer w reaches the tracking sensor of the second line to Sm 犄, the main control device 20 will be described in accordance with the aforementioned line The measurement results of the tracking sensor 20 to the heart 4 to the center 4 and the tracking sensor to the I # of the second line are the same as the positions a. To c · above, and the position of the curved surface of the projection optical system on the wafer w surface is determined. Relatively. However, at this time, when the aforementioned main control device is controlled at the same level as the aforementioned a., The approximate plane of the wafer w surface is calculated based on the measurement results of the tracking sensors s3i to SB and SZ1 to S24, E continued to the next page (Please note and use the continuation page when the invention description page is not enough.) 200301538 玖. The invention description does not only apply to wafer W > ^ ---- τ Caitian direction, but also controls the scanning direction. In order to make the average 1, 1, " people say that the approximate plane of the image surface of the projection optical system PL · is flattened. One . At this time, at the time point when the driving of the same piezoelectric element as b · is performed, the gate is described. The piezoelectric element ^ to Pu + 3 is located in the second row of the track minus from the corresponding time Sn to Directly below I4, and the tracking sensors S31 to Π from the bottom of Ding S34 have the aforementioned piezoelectric elements P1 + " to Pι + 1 j + 3 °, and the wafer scans and exposes the wafer, and the wafer W When the position of the front end of the first short-circuit area is only 4mm from the position of ^ w 10 ^ ^, the piezoelectric element & + 1 ] To ^ + 3, and there is the aforementioned piezoelectric element directly below t of the tracking sensors s31 to S34 in the aforementioned first line. At this time, although the aforementioned main control garment 20 enters the same direction as the aforementioned d, The projection optical system PL on the surface of the circle w is curved and the positions of i ~ 15 on a # are relatively aligned. However, at this time, the output terminal of the selection signal is switched from the driving circuit 9oν to the driving circuit 9 ′. Then, during the scanning exposure, the position corresponding to the curved surface of the projection optical system of the projection optical system facing the surface of the wafer W, which is the same as d. And e. Described above, is repeatedly performed. 20 In this way, as soon as the scanning exposure of the first short-circuit area is finished, according to the instruction of the Japanese knife from the main control device 20 described above, and the position control is performed by the aforementioned platform, ': the wafer table WST is in the χ and γ axis directions Step by step, and move to the position where the acceleration of the second short circuit (the second short circuit area) is exposed. Then, under the management of the main control device f20, the same scanning exposure as described above is performed on the second short-circuit area.如此 ~ so-come and repeat the scan of the short circuit area on the wafer W 0 times (when the invention page is insufficient, please note and use the continuation page "38 200301538 发明 说明 # 买 贝 玖 、 发明 Instructions μ and Stepping between the short-circuit fields, and the electrical transfer of the reticle R to all the short-circuit fields of the exposure object on the wafer W. As described above, according to the substrate device (70, ⑽, 85) of this embodiment ), Corresponding to each of the divided areas where a predetermined area where the majority of the rods are arranged is divided into a matrix, and a multi-element Pπ is provided. The above-mentioned driving device 85 can simultaneously and individually drive the above 15 In the element p, a plurality of (eight) piezoelectric elements p constituting each of the pre-blocked blocks are configured, and the application of electric dust (driving voltage) can be adjusted individually. At least one of the above-mentioned rods is arranged. Therefore, as far as the divided areas corresponding to the blocks of the piezoelectric element are concerned, the unevenness of the surface of the wafer w supported on the rods 32 can be reliably suppressed. According to this embodiment, The blocks of most dust electrical components include a plurality of divided blocks (specific blocks) composed of 2 × 4 dust electrical component groups arranged in a matrix arrangement of 2 rows and 4 columns, and the aforementioned driving device 85 has q driving circuits 9 〇1 ～ 9〇q The drive circuits 90m to 90q are turned on and off individually by using a combination of the 1st signal and the 2nd signal. The switches (and circuits GT1 to GT8) corresponding to the piezoelectric elements are used to individually drive the 2 × 4 dust-electric components, and the first signal is transmitted through the 2 × group signal lines (χι, χ2). One of the selected signal lines is input, and the aforementioned second signal is input through one of the signal lines selected from the four unit group signal lines (Y1, Υ2, Υ3, and γ4). Therefore, and will be used to form each Each of the dust-electrical elements in the divided block is individually connected to a voltage supply source, and a closed circuit for driving each piezoelectric element can be formed only when necessary. At the same time, the piezoelectricity for selecting a driving object can be reduced. (When the description page of the invention is inadequate, keep in mind and use the continuation page) 20 20030153 8 发明 Description of the invention Description of the invention A piece of data on the continuation page (or the number line). The reduction of the amount of data is that the larger the division of the block, the better the deletion effect. In the case of a divided block made up of electrical components, (a + b) (bit) data is sufficient. 10 15 20 In the substrate holding device according to this embodiment, the aforementioned · Dynamic Series 85 The block of the piezoelectric element to be driven is switched in accordance with the selection signal (対 邛 才 曰) input from the main control device 20 described above. Therefore, the phase car uses the blocks of all piezoelectric elements as a constant drive. The circuit configuration can simplify the circuit configuration, and at the same time, it has the advantage that it is not easy to be limited by the number of outputs when the computer is controlled. In addition, the wafer holding portion 70 related to this embodiment is disposed outside a predetermined area area where the number 32 described above is arranged, and surrounds the area, and has a plurality of rods 32 to maintain its flatness substantially. Status-Same as support for QW ring 邛 28. Therefore, the wafer w maintains a certain degree of flatness including the free end portion near the outer edge portion, that is, the wafer w is held on another type of wafer holding portion without extreme unevenness. The substrate holding device of the square, related parties, and the present embodiment is a vacuum suction mechanism (the first vacuum pump 46A, the solenoid valve V1, and the supply exhaust pipe) for introducing the gas in the space inside the ring portion 28 with a true line. 40 and the supply milk discharge paths 38A to 38C) serve as suction mechanisms for sucking the wafer w on the front end portion of the majority rod and the upper end portion of the ring portion 28. Therefore, even if the substrate holding device moves at a high speed, the positional deviation of the substrate can be prevented. Alternatively, an electrostatic adsorption mechanism may be provided as the adsorption mechanism. In addition, according to the exposure style related to this form of dress 100, the aforementioned main bet 0 continued the next page (when bribery is not enough, face down and use the continued page)

200301538

发明 、 Invention device 20 can be used as described above. It can be used as a perch, * a deep ..., the detection results of the point position detection system (60a, 60b), and through the aforementioned drive # 勒 衣 置 85, and control from the majority The strain of the piezoelectric elements tg 1 mI to J among the pressure elements P 1 1 to PMN is selected to adjust the shape of the surface of the wafer w. That is, when the exposure is recognized, the strain of the piezoelectric element p in the projection area (exposure area) IA in which the pattern of the greenish y / line pattern R is projected by the projection optical system PL can be adjusted, and the The unevenness of the surface of the wafer W in the exposure area IA is within the focal depth range of the projection optical pure pl ', and the blur caused by defocus can be suppressed, and the exposure accuracy can be improved. In addition, according to the conventional exposure apparatus 100, the wafer holding unit 70 is based on the detection result of the focus position detection system (60a, _), and is controlled by the main control device 2G. It is driven in the z-axis direction and the inclined direction opposite to the χγ plane through the platform control device 19 and the wafer stage driving unit 24. That is, in this embodiment, driving for driving the aforementioned ζ tilt stage% 15 and the wafer holding section 70 toward the optical axis direction of the aforementioned projection optical system and the tilt direction opposite to the surface perpendicular to the optical axis direction The system (wafer φ stage driving unit 24, platform control device 19) is based on the detection results of the aforementioned focus position detection system (60a, 60b) and is controlled by the aforementioned main control device 20. As described above, it can be scanned During the exposure, the surface of the wafer W is positioned near the curved surface of the image of the projection optical system PL 20 before driving the piezoelectric element p, and the overall tilt can be corrected. Especially for the latter, since the large curvature (curved portion) of the wafer w surface can be corrected, the combination of this correction (level control) and driving of the piezoelectric element can prevent the insufficient driving stroke of the piezoelectric element. occur. However, when most of the driving strokes of the piezoelectric element can be set to 0 pages (when the invention description page is insufficient, please note and use the continuation page) Either the optical axis direction or an inclined direction opposite to a surface perpendicular to the optical axis direction may be driven. In other words, instead of providing a large number of actuators that drive the z-tilt stage 30, only a wafer table may be used as the Z-tilt stage 30. In the exposure device 10Q in the form of Bebesch, when using vacuum ultraviolet light with a wavelength shorter than 18G_, which is shorter than the laser light of the ArF laser, for example, when the dimmer light is used as the bright light IL, the focal point of the projection optical system is deep. X is more narrow. Therefore, as described above, the unevenness of the surface of the wafer W supported by the rod 32 can be more reliably suppressed by the driving of the piezoelectric element, and it can be said that the effect of this embodiment is particularly good. Also 'Although the simplification of the description in the above embodiment is not particularly simplified = description', for example, the correct curvature of the image surface of the projection optical system is measured in advance (that is, the shape measurement of the image surface such as the curved image surface or the inclined image surface) As a result, when the difference from the approximate plane of the image curved surface is large: (only the Z tilt stage is driven 3G, and the deviation exceeding the predetermined allowable range remains) 4 ', the aforementioned control and driving device M t at the time of scanning exposure, the aforementioned The main 15 control device 2G system further considers and controls the distortion of the image surface, and selectively drives the piezoelectric ㈣p, and conforms to the distortion of the image surface to correct the unevenness of the surface of the wafer W. Moreover, despite the distortion of the image surface, However, in the general area of the exposure field IA, the surface of the wafer w (short-circuit area) is still expected to be included in the focal depth range of the projection optical system PL. Also, in the above embodiment, although the aforementioned substrate holding portion has been targeted 70 is described as a three-layer structure, and the case where the intermediate layer is regarded as a single layer composed of a plurality of L electrical elements p arranged in a matrix is described, but is not limited to 0 Continued pages (®Don’t touch it, see | 5 touches) 20 200301538 Rose, description of the invention Description of the invention Continued page This' can also be set to include multiple piezoelectric elements. Multiple layers of layers, such as two layers each The piezoelectric elements are arranged alternately. In addition, the piezoelectric element constituting ㉟ can also be used to correct the unevenness of the surface of the wafer w in the non-scanning direction, and the piezoelectric element constituting another layer can also be used for related The correction of the unevenness on the surface of the wafer w in the square and scanning directions is mainly performed. 修正 Furthermore, although the piezoelectric element P is driven during scanning exposure in the above embodiment, it is driven only before scanning exposure in each short circuit area. Piezoelectric: p and correct the unevenness on the surface of the short-circuit area, and only the aforementioned Z tilt stage 30 may be driven during scanning exposure.

° Also in the above embodiment, it is not necessary to level the surface of the short-circuit area through the correction of the piezoelectric element P. For example, only the aforementioned Z tilt stage 30 is used to drive at least one part of the surface of the short-circuit area. The convexity and concavity of the light is changed so that the image surface of the projection optical system PL and the short-circuit area surface are the same in the exposure area illuminated by the illumination light. Within depth). In addition, although in the above embodiment, after the scanning of the wafer is started, before the scanning exposure of each of the road areas, the electro-optical element p is driven and the unevenness on the surface of the short circuit area is corrected, but the timing of the unevenness correction can be freely For example, 20 can also correct the unevenness on the surface of the short circuit area before the scanning of the wafer is started. Furthermore, the aforementioned main control device 20 may also detect the z-positions (with the optical axis of the projection optical system pL) of the majority of points in each short-circuited area on the wafer W at any time-point before the illumination light is applied to each short-circuited area. The position where the directions are opposite), and then according to the detection result, the drive is driven 011 times during the scanning exposure in the same manner as the above embodiment (when the description page of the invention is not enough, use it and keep it in mind) 200301538 Continued to move the piezoelectric element P. For example, it is also possible to use the same focus position detection system as the aforementioned focus position detection system (60a 60b), or for example, as disclosed in Japanese Patent Laid-Open Publication No. 7-321030 and the corresponding U.S. Patent Publication G A. As disclosed in No. 6,016,186, a wafer having a focal position detection system for projecting a detection beam on a circle is used, which has been programmed into the -part (opposite optical system) of the transmission system. The adjustment system performs the aforementioned EGA with most of the New York fields as the correction short-circuit fields (sample short-circuit fields), and describes the main control device 20's spear operation of the wafer w between the correction short-circuit fields. At this time, the focus position detection system (Surgery, _) or the focus position detection system that has been incorporated into the wafer correction system described above is used to detect the z positions of most points in each short circuit area on the Japanese yen w, and The test results can be stored in memory. At this time, the above-mentioned main control device 20 may also be well-established. Think about it; f test results, drive the piezoelectric element P before or during scanning exposure. At this time, before the series of exposure operations of the wafer, 15 can be used instead of the focus position detection system that has been programmed into the aforementioned wafer alignment system, and the focus position detection system (60a, 60b) can be used to detect the relevant wafers. Information of at least one short-circuit area, and the piezoelectric element P is driven according to the information. In addition, although the aforementioned focus position detection system (60a, 60) has a pre-reading sensor having a plurality of detection points (the projection position of the slit image is set at 20) outside the exposure area IA, it is not necessary to set a pre-reading sensor. The reading sensor can also set the detection point only in the exposure area IA. In addition, the focus position detection system and projection optical system pL or projection circle system for detecting the unevenness of the wafer surface can be set to a predetermined position. The relationship is set, and its detection points are only _. 0 糸 Buy this page (if the invention description page is insufficient, please note and use the continuation page) 200301538

发明 、 Explanation of the invention ίο Moreover, although the exposure apparatus of the above embodiment has only == a position that can be used to perform a reticle pattern through projection optics “PL” and a measurement position (adjustment for mask detection by the wafer alignment system) (Positive position) A wafer stage is separately configured, and exposure and measurement operations are performed at the same time. The second wafer stage type is also possible. In this exposure device, a focus position detection system configured at a phasor position can also be used. To detect information about the unevenness in the short-circuit area on the wafer. For example, when the wafer stage is moved from the detection position to the exposure position, the M electrical component p is driven and the concaveness of the wafer W is corrected. It is disclosed in, for example, Japanese Patent Laid-Open Publication No. 1G-214783 and its corresponding U.S. Patent Publication No. 6,341,007, or International Publication No. 98 / Tech 91 and its corresponding U.S. Patent Publication No. 6,262,7%, etc. 0 To the extent permitted by the domestic ordinances of the 15 designated countries or designated countries specified in the international application of the present invention, the above-mentioned U.S. Patent Publication No. It is disclosed as a part of the description in this specification. Furthermore, although in the above-mentioned embodiment, the open-loop control of the dragon electric element P is used, it may be provided in consideration of the hysteresis and the like of the piezoelectric element P. Sensors (eg, strain gauges, etc.) that measure the driving amount of the dust electric element p are controlled by 20 closed circuits. Instead of setting the aforementioned sensors, the sensors based on af sensors (focus position detection system) The output is used to correct the driving amount of the piezoelectric element p. In the above-mentioned embodiment, although a multilayer piezoelectric element (piezoelectric actuator) that generates a strain proportional to the electric field is used as the driving element, When it ’s not enough to use, please note and use 顚) 200301538 Rose, Invention Description Invention Description, Continued but not limited to this, you can also use an electric strain actuator that generates twice the ratio to the electric field-change). In the above embodiment, although the wafer holding portion is of a three-layer structure, the present invention is not limited to the above embodiment. For example, the aforementioned z ^ ramp 30 also functions as the lowest layer (third layer). Base The table member 42 can also be used. Furthermore, in the above embodiment, although the above-mentioned inclination ° 3G is driven during scanning exposure, and the exposure area ΪA is described, the surface of the wafer and the projection 10 15 20 ~ light to the system The imaging surface of the unified PL is roughly the same, but instead, or in combination with it, the imaging surface of the projection optical system PL may be shifted at least-part of the exposure area in the z direction. At this time, for example, It may be controlled to change the wavelength of the illumination light, move the reticle R, or move at least the optical element of the projection optical system PL so as to shift the imaging surface of the projection optical system PL. Also, in the above embodiment, Although the wafer has been flattened with respect to both the scanning direction and the non-scanning direction (correcting the unevenness of the wafer), it can also be only about one of the scanning direction and the non-scanning direction, for example, the wafer is corrected only about the non-scanning direction. The bump. Further, in the above-mentioned embodiment, “although the outer diameter of the ring portion 28 of the wafer holding portion is only slightly smaller than the outer diameter of the wafer w”, the outer diameter of the ring portion may be the same as that of the wafer W. The outer diameter is equal to or more than 1, the wafer holding portion ′, ′: a garment. The upper end face of P 28 is about the same height as the plane specified in accordance with the majority rod 32 described above, or it may be only higher than the plane specified in accordance with the majority rod ^. Furthermore, on the upper end surface of the aforementioned ring portion 28, the plane and upper end surface specified in the description of the invention continued on page 32 are provided in accordance with the above-mentioned majority of rods (face_page tilts the brain, please_reuse the continuation page). It is also possible to have approximately the same number of protrusions (rods). At this time, the plane defined by a plurality of protrusions provided on the upper end surface of the ring portion 28 may be slightly lower than the plane prescribed by a plurality of rods. Further, in the above embodiment, as shown in FIG. 2, although most of the supply exhaust ports 36 are arranged along the radial direction from the vicinity of the center portion of the wafer holding portion at approximately 5 120 ° intervals, the present invention is not It is limited to this, for example, this number of supply air ports 36 may be arranged in a square shape. In addition, although three up-and-down moving levers (central questioning type) are used in the above-mentioned embodiment, for example, Japanese Patent Laid-Open Publication No. 20001010100895 and corresponding U.S. Patent Publication No. One of the up and down levers disclosed in No. 6,184,972. Further, in the exposure apparatus of the above embodiment, for example, the wafer stage may be used as a coarse and fine movement stage so that the z-inclined stage 30k may be driven in a small amount in the plane. Similarly, a reticle stage can be used as the coarse and fine movement stage. 15 In the above-mentioned embodiment, although KrF excimer laser light, ArF excimer laser light, or dagger laser light, or bright lines (g-line, line, etc.) in the ultraviolet light field from an ultra-high pressure mercury lamp are used as illumination. The light ratio is not limited to this, and other vacuum ultraviolet light such as AΓ2 laser light (wavelength 126 nm) may be used as the illumination light IL. In addition, for example, a single-wavelength laser light from a Peng + conductor laser or a fiber laser vibration, or a visible wavelength laser light is used as the vacuum ultraviolet light, and for example, has been coated with (E0 (or oblique and mirror) two (A) The fiber amplifier is used to increase the amplitude, and it is also possible to use a non-linear optical crystal to convert the wavelength to high-frequency waves of ultraviolet light. In addition, in the above-mentioned Bie Xing resentment, the focus is not to increase the projection of the light. When the page is not enough, check and use the continuation page) 200301538 Invention Description H Page 玖, Invention Description The burden of the optical system and the advantages of the scanning exposure method that can transfer a larger area of the pattern to the wafer with high accuracy. In addition, the case where the present invention is applied to the scanning exposure method of the step scanning method will be described, but of course, the scope of application of the present invention is not limited to this. That is, the reduced projection exposure device of the step and iteration method is also applicable to this method. The invention can also achieve high-precision exposure without defocusing. Since still exposure is performed at this time, in particular, most supporting members are driven in response to distortion of the curved surface of the image ( When adjusting the shape of the surface of the wafer w to adjust the shape of the surface of the wafer w, a part of the exposure area (consistent with the short-circuit area) to achieve the surface of the wafer w is included in the correction within the depth range of 10 points of the focal length of the projection optical system. In addition, the illumination optical system and projection optical system composed of a large number of lenses are incorporated into the exposure apparatus body, and the optical adjustment is performed. At the same time, the reticle table and wafer composed of a large number of mechanical parts are simultaneously adjusted. The stage is mounted on the main body of the exposure device and connected with wiring and piping, and then the total adjustment (electric adjustment, operation confirmation 15, etc.) is performed, so that the exposure device of the above embodiment can be manufactured. Moreover, the manufacture of the exposure device should be appropriate. The temperature, cleanliness, and the like are performed in a clean room. In the above-mentioned embodiment, although the case where the present invention is applied to an exposure device for semiconductor manufacturing has been described, it is not limited to this, for example, 'for patterning a liquid crystal display element. Twenty light-exposure devices for liquid crystals transferred to angular glass plates or used to make thin-film magnetic heads, photographic elements, and microcomputers , Organic EL, DNA wafer exposure apparatus of the present invention is also applicable. Exposure apparatus for manufacturing an optical

0 Continued pages (Please note and use the continuation page when the invention description page is not enough.) Also, not only micro-devices such as semiconductor devices, EUV exposure devices, X-ray exposure, etc. 200301538 Invention Description_ 页 玖 、 DESCRIPTION OF THE INVENTION The present invention is also applicable to an exposure device such as a circle. Here, exposure devices that use DUV (extreme ultraviolet light) or VUV (vacuum ultraviolet light) light generally use translucent targets, and the reticle substrates use quartz glass, fluorine-coated quartz glass, fluorescent Stone, magnesium fluoride or crystal. 5. Furthermore, the present invention is also applicable to an immersion exposure apparatus which is filled with liquid between the projection optical system PL and the wafer disclosed in, for example, International Publication No. WO99 / 49504. Furthermore, in the above-mentioned embodiment, although the case where the substrate holding device of the present invention is applied to an exposure device has been described, if it is necessary to hold the substrate 10 and correct the unevenness of the substrate with accuracy, even the exposure device The substrate holding device of the present invention is also applicable to other devices such as inspection devices and processing devices. << Apparatus Manufacturing Method >> Next, a description will be given of a conventional manufacturing method of the apparatus manufacturing method 15 using the exposure apparatus in the lithography step. Fig. 12 is a flowchart showing a manufacturing example of a semiconductor wafer such as a vibration sensor or an LSI, a liquid crystal panel, a CCD, a thin-film magnetic head, and a microcomputer. As shown in FIG. 12, first, in step 201 (design step), the function and performance of the device are designed (for example, the circuit design of a semiconductor device, etc.), and

(It's called Siyi Township) You make wafers from silicon net materials. Then, in step 204 (wafer processing step), the masks and crystals prepared in steps 201 to 203 are used. (When the description page of the invention is insufficient, the wafer is used as described below. Please note and use lithography technology, etc. (continued) 200301538 发明, description of the invention to form the actual circuit on the wafer, etc. Then, in step 2 ^ τί ^ Γ step), the component assembly is performed using the processed wafers of the step program: In step 205, the dimming step, the tandem step, and the financial step (sealed wafer) are included as required. step. Finally, in step 206 (inspection step), inspections such as the Yuanyang operation confirmation test and endurance test performed in step 2Q5 are performed. After the preceding steps, the device is complete and ready for shipment. Fig. 13 shows a detailed process example of the aforementioned step 204 of the semiconductor device. In FIG. 13, in step 211 (oxidation step), the wafer surface is oxidized. In step 212_), an insulating film is formed on the wafer surface. In step 213 (electrode formation step), an electrode is formed on the wafer by steaming. At step 214 (implantation step), the wafer is implanted with ions. The above steps 211 to 214 respectively constitute pre-processing steps of each stage of the wafer processing, and are selected and executed at each stage according to necessary processing. At each stage of the wafer process, the aforementioned pre-processing steps—end, then the post-processing steps are performed as described below. In this post-processing step, first, in step 215 (photoresist forming step), a wafer is coated with a photosensitizer. Next, in step 216 (exposure step), the circuit pattern of the mask is transferred to the wafer by the aforementioned lithography system (exposure device) and the exposure method. 'Then, in step 217 (development + step), the exposed wafer is developed, and in step 218 (money engraving step 除去), the exposure member other than the remaining photoresist is removed by money engraving | then' At step 219 (photoresist removal step), the photoresist that is useless after the money is engraved is removed. The pre-processing steps and post-processing steps are repeatedly performed by the hunter. Continue to the next page at 0 (if the description page of the invention is insufficient, please Note and use the continuation page), the daily description of the invention 50 If: 5 10 15 20 200301538 玖, multiple circuit patterns are formed on the description of the invention.

If the device manufacturing method of the present embodiment is used, the exposure device of the above embodiment is used in the exposure step (step 216), so that the reticle pattern can be transferred to the wafer with high accuracy. As a result, the productivity (including yield) of the device with high product = can be improved. As described above, the substrate holding device of the present invention is suitable for reliably suppressing unevenness on the surface of a substrate to be held. Furthermore, the exposure apparatus of the present invention is suitable for suppressing blur caused by defocus and transferring a pattern onto a substrate. 10 X. The device manufacturing method of the present invention is suitable for manufacturing a high-integration micro device. ^ [Brief description of the drawings] FIG. 1 is a diagram schematically showing the configuration of an exposure apparatus according to an embodiment of the present invention. U &quot; 15 帛 2 is a plan view showing the wafer holding portion of FIG. 1 and a supply / exhaust mechanism connected to the wafer holding portion. Fig. 3 is a plan view showing the relationship between the rod arrangement of the wafer holding portion in Fig. 2 and the short-circuit area on the wafer. FIG. 4A is a plan view showing a portion 20 corresponding to the short-circuit area SA in FIG. 3 taken out, and FIG. 4B is a cross-sectional view of a portion of a wafer holding portion corresponding to the line cross-section shown in FIG. 4a. Figure 4c shows the state from Figure 4B to the state after the piezoelectric element is driven. No. :) The figure shows the positional relationship between the exposure area and the focus sensor. Figure 6 shows the middle layer of the white used to form the wafer holding part. ☆ ^ n 0 Continued pages (invention is not used at all | when it is tender, check and use continued pages) 200301538 An example of the arrangement of a piezoelectric element. Figure 7 shows the internal structure of a driving device for driving a piezoelectric element. Fig. 8 shows an example of the configuration of the driving circuit shown in Fig. 7. 5 Figure 9 shows an example of the configuration of the switching circuit of Figure 8. Figure 10 shows the input (0, 1) to the signal lines of the X group (XI, X2), γ group (Y1, Y2, Y3, Y4) and the rotation of the AND circuits GT1 to GT8 in Figure 9 ( 〇, ι) relationship truth table. Figure 11 is a time chart of the signal sending 10 for driving the piezoelectric elements Pij to Pij + 3. Fig. 12 is a flowchart illustrating an embodiment of a device manufacturing method according to the present invention. FIG. 13 is a flowchart showing details of step 204 of FIG. 12. [Representative symbol table of main components of the drawing] 22 ... Member 23 ... Internal electrode 2 4 ... Wafer stage driving part 26 ... Base part 28 ... Ring part 30 ... Z tilt stage 31 ... X Platform 32 .. .. # 34a, 34b, 34c ..... Up and down lever 0 Continued page (When the description page of the invention is not enough, please note and use the continued page) 200301538 玖, Description of the invention 36 .. Supply exhaust port 38A, 38B, 38C ... Supply and exhaust paths 40a, 40b, 40c ... Supply and exhaust 5 branch pipe 40d ... Supply and exhaust main pipe 40e ... 1st exhaust branch 40f ... 2nd exhaust branch Tube 40g ... 3rd exhaust branch pipe 10 42 ... Abutment member 46A ... 1st vacuum pump 46Ba. &Quot; Vacuum chamber 46Bb. &Quot; 2nd vacuum pump 46C ... Supply gas device 15 50 ... Platform device 60a ... irradiation system 60b ... light-receiving systems 60a, 60b ... multipoint focus position detection system 20 70 ... wafer holding portion 72 ... cooling mechanism 8 0 ... supply and exhaust mechanism 85 ... drive device 90. .. Description of the driving circuit invention $ .. Stomach 92 .. Select signal output circuit 100... Exposure device VI, V2, V3 ... Solenoid valve W ... Wafer R ... Marking line P ... Pressure Electric element 5 ... Focus sensor AX ... Optical axis BL ... Block GT ... and circuit CS, SL ... Signal line SW ... Switch circuit SA ... Rectangular area SA ... Short circuit area D / A ... Converter IA ... Exposure area IL ... Illumination light PL ... Projection optical system BS1 ... 1st bus BS2 ... 2nd bus AMP ... amplifier RST ... reticle stage WST ... wafer stage

53

Claims (1)

200301538, patent application scope 1.-A substrate holding device 'is used to hold a flat substrate, and includes: most protruding support members, which are arranged in a predetermined area' and are formed to support from below by each front end The substrate supporting surface of the aforementioned substrate; most of the driving elements are separated from the majority divided by the aforementioned field The cutting areas are individually corresponding and a plurality are provided individually to respectively include the majority of the aforementioned supporting members; and the driving unit is configured to simultaneously and individually drive the majority of the driving elements, and is configured to have a predetermined value for the majority of the divided areas. Most of the aforementioned driving elements of each block are pre-blocked according to the corresponding relationship, so that the shape of the substrate support surface in the corresponding divided field is changed. 2 · If the scope of patent application is the first! In the substrate holding device of the item, each of the foregoing is a one-to-one correspondence between the field and each block. 3. The substrate holding device according to item [Scope of the patent application], which makes the aforementioned driving elements correspond to the aforementioned divided areas, and a plurality of them are arranged at least in one direction. (For example, the substrate holding device of the patent application scope, wherein the block of most of the aforementioned driving elements includes a specific block composed of a large number of mx n driving element groups arranged in a matrix configuration of the ⑽η column. 5. For example, the substrate of item 4 of the scope of the patent application is maintained, wherein the aforementioned driving device uses the combination of the first signal and the second signal to individually turn on and off mx η individual and is used to form each of the aforementioned specific blocks. Each of the 0 drawing times (remember to use the continuation page when the patent application page is not in use) Apply for the continuation page of the patent application to individually drive the aforementioned mx η and the corresponding driving device for the patent application driving device. Also, the aforementioned first signal is turned in by one of the m &quot; verbalization lines and one of the bluff lines, and the aforementioned 帛 2 signal is 6. · selected from the eleven second signal lines by- Signal line to input. For example, the substrate holding device in the scope of patent application, where the aforementioned drive clothing is a block that can be switched into a driving element that drives the material according to external instructions. Shishenkouyue Patent | 1 The substrate holding device, in which the aforementioned driving element is strained in response to the application of a voltage. 8. The substrate holding device in item 7 of the patent scope, wherein the aforementioned driving element is a piezoelectric element. The substrate holding device of this item further has a convex portion which is arranged outside the aforementioned area and surrounds the area, and supports the aforementioned substrate together with the state that most of the supporting members maintain their flatness. 10 ′ 如The substrate holding device with the scope of patent application No. 9 further has an adsorption mechanism, which is used to adsorb the aforementioned substrate to each front end portion of the majority of the support members and the upper end portion of the convex portion. The substrate holding device, wherein the above-mentioned suction mechanism is a vacuum suction mechanism for vacuum suction of the gas in the space inside the convex portion. 12. The substrate holding device such as the item No. 丨 of the scope of patent application, further has a mechanism for adjusting the above-mentioned most driving elements and the aforementioned Temperature adjustment device for the temperature of at least a part of the driving device. When inadequate use, please note and use continued alfalfa) 55 2o〇3〇1538 Pick up, apply for patent scope, apply for patent scope, continued page I3 · An exposure device is used to irradiate the energy beam to the patterned mask Those who transfer the aforementioned pattern on the substrate through a projection optical system, and include: a substrate holding device, such as any one of the 5th to ^ th patent application scope; a focus position detection system, used to The position information is detected, and the position information is about the optical axis direction of the projection optical system at most points on the surface of the substrate held by the substrate holding device; and the control device takes into account the aforementioned focus position detection system Test results, and control the driving device and selectively drive the plurality of driving elements to adjust the shape of the surface of the substrate held by the substrate holding device. i5 I4 · If the exposure device in the thirteenth aspect of the patent application has a driving system 15, the driving system can drive at least one of the aforementioned optical axis direction and an inclined direction opposite to a surface perpendicular to the aforementioned optical axis direction. The part of the substrate holding device on which the substrate is placed, and the control device controls the driving system based on a detection result of the focus position detection system. 20 15. The exposure device according to item 13 of the patent application scope, wherein the aforementioned control device controls the aforementioned driving device in consideration of distortion information of the image curved surface of the aforementioned projection optical system. For example, the exposure device under the scope of patent application No. 13 has a scanning device. The scanning device makes the aforementioned mask and the substrate simultaneously and draw a second page facing the aforementioned energy 0. ) 200301538 Pick up and apply for a patent IS is within the scope of patent application. Continue to measure the beam and scan in the scanning direction. 17_ For example, the exposure M of item 16 of the patent application, wherein the control device can at least modify the shape of the substrate surface, and the shape is related to the scanning direction in the irradiation area of the substrate surface irradiated with the energy beam. Vertical non-scanning direction. 18. The exposure device according to item 16 of the application for a patent, wherein the aforementioned control and placement means controls the aforementioned driving device to scan the aforementioned mask and substrate 8 by the aforementioned scanning device, and considers the detection result of the focus position detection system to The shape of the surface of the substrate is corrected so that all the irradiated areas of the surface of the substrate irradiated by the energy beam are within the range of the depth of focus of the aforementioned projection scene &gt; optical system. 19. The exposure device according to item 18 of the scope of patent application, wherein the control device considers the detection result of the focus position detection system at any time point before the energy beam is irradiated on the substrate, to order Control of the aforementioned drive cracking to modify the shape of the surface of the substrate. 2. The exposure device according to item 13 of the patent application range, wherein the aforementioned energy beam is vacuum ultraviolet light having a wavelength of 180 nm or less. 20 I A type of exposure, which can be cut and transmitted to a field film, and the pattern of the aforementioned mask is transferred to the substrate through a projection optical system, and has a scanning device, which is relative to the aforementioned energy beam Moving the same mask as described above, moving the substrate '· detection device' relative to the energy beam passing through the projection optical system is used to detect the surface of the substrate. Note and use the continuation page) 5 10 15 Last page of patent application scope 22. Pick up and location information of patent application scope; Lou Jibao waiting device, which is an ancient Xi Honghong ^ /, with a number of protruding support members and most driving elements, And, today ... Hai and other supporting members are used to support the aforementioned substrates, and the driving elements are respectively slanted ^ 2 corresponding to most of the segmented areas are set, and the 5Hai segmented area is at least right ^ tv is not connected with the aforementioned substrate The moving scanning direction crosses the non-scanning direction and is divided by moving the mask and the substrate at the same time to turn 0 to obtain the substrate with the pattern just described. Pre Cloth art; and "opposing area movable clothes' system in accordance with a detection result of the detecting means to the drive, said drive Wu Xi number of at least one member for adjusting the predetermined position of the surface areas of the at least a part of the substrate. . The seed dressing method includes a lithography program, and in the foregoing lithography program, exposure is performed using an exposure device such as the 13th item in the patent application. The method for manufacturing a clothing set 'includes a lithography program, and in the foregoing lithography long sequence, exposure is performed using an exposure device such as the patented item 21 in the patent. 58