WO2003001600A3 - Speicherzelle, speicherzellenanordnung und herstellungsverfahren - Google Patents
Speicherzelle, speicherzellenanordnung und herstellungsverfahren Download PDFInfo
- Publication number
- WO2003001600A3 WO2003001600A3 PCT/DE2002/002141 DE0202141W WO03001600A3 WO 2003001600 A3 WO2003001600 A3 WO 2003001600A3 DE 0202141 W DE0202141 W DE 0202141W WO 03001600 A3 WO03001600 A3 WO 03001600A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- memory cell
- producing
- same
- silicide
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical group [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract 1
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02742805A EP1399972A2 (de) | 2001-06-21 | 2002-06-12 | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
JP2003507893A JP3976729B2 (ja) | 2001-06-21 | 2002-06-12 | メモリセル、メモリセル構成、および製造方法 |
KR1020037016748A KR100629383B1 (ko) | 2001-06-21 | 2002-06-12 | 메모리 셀, 메모리 셀을 포함하는 장치 및 메모리 셀 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10129958A DE10129958B4 (de) | 2001-06-21 | 2001-06-21 | Speicherzellenanordnung und Herstellungsverfahren |
DE10129958.3 | 2001-06-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003001600A2 WO2003001600A2 (de) | 2003-01-03 |
WO2003001600A3 true WO2003001600A3 (de) | 2003-08-21 |
Family
ID=7688966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/002141 WO2003001600A2 (de) | 2001-06-21 | 2002-06-12 | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (2) | US6548861B2 (de) |
EP (1) | EP1399972A2 (de) |
JP (1) | JP3976729B2 (de) |
KR (1) | KR100629383B1 (de) |
CN (1) | CN100524774C (de) |
DE (1) | DE10129958B4 (de) |
TW (1) | TW567612B (de) |
WO (1) | WO2003001600A2 (de) |
Families Citing this family (60)
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US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
DE10225410A1 (de) * | 2002-06-07 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Herstellung von NROM-Speicherzellen mit Grabentransistoren |
US6777725B2 (en) * | 2002-06-14 | 2004-08-17 | Ingentix Gmbh & Co. Kg | NROM memory circuit with recessed bitline |
DE10226964A1 (de) | 2002-06-17 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Herstellung einer NROM-Speicherzellenanordnung |
DE10229065A1 (de) * | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines NROM-Speicherzellenfeldes |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
DE10232938B4 (de) * | 2002-07-19 | 2005-05-04 | Infineon Technologies Ag | Verfahren zur Herstellung einer vergrabenen Bitleitung für einen Halbleiterspeicher |
KR100468771B1 (ko) * | 2002-10-10 | 2005-01-29 | 삼성전자주식회사 | 모스 트랜지스터의 제조방법 |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
JP2006506813A (ja) | 2002-11-12 | 2006-02-23 | マイクロン テクノロジー インコーポレイテッド | Cmosイメージセンサにおける暗電流を減少させる接地ゲート及び分離技術 |
US6888214B2 (en) * | 2002-11-12 | 2005-05-03 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
TW575945B (en) * | 2002-12-17 | 2004-02-11 | Nanya Technology Corp | Method for fabricating a vertical NROM cell |
KR100463184B1 (ko) * | 2003-01-30 | 2004-12-23 | 아남반도체 주식회사 | 비휘발성 메모리 장치 제조 방법 |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
DE10324550B4 (de) * | 2003-05-30 | 2006-10-19 | Infineon Technologies Ag | Herstellungsverfahren für eine NROM-Halbleiterspeichervorrichtung |
JP4334315B2 (ja) * | 2003-10-10 | 2009-09-30 | 株式会社ルネサステクノロジ | 半導体記憶装置の製造方法 |
US6965143B2 (en) * | 2003-10-10 | 2005-11-15 | Advanced Micro Devices, Inc. | Recess channel flash architecture for reduced short channel effect |
US7067362B2 (en) * | 2003-10-17 | 2006-06-27 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit with protected implantation profiles and method for the formation thereof |
US7050330B2 (en) * | 2003-12-16 | 2006-05-23 | Micron Technology, Inc. | Multi-state NROM device |
US20050251617A1 (en) * | 2004-05-07 | 2005-11-10 | Sinclair Alan W | Hybrid non-volatile memory system |
KR100593599B1 (ko) * | 2003-12-30 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7041545B2 (en) * | 2004-03-08 | 2006-05-09 | Infineon Technologies Ag | Method for producing semiconductor memory devices and integrated memory device |
JP2005277171A (ja) * | 2004-03-25 | 2005-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4377751B2 (ja) * | 2004-06-10 | 2009-12-02 | シャープ株式会社 | クロスポイント構造の半導体記憶装置及びその製造方法 |
KR100709823B1 (ko) * | 2004-08-26 | 2007-04-23 | 주식회사 케이이씨 | 트렌치형 전계효과트랜지스터 및 그 제조 방법 |
US7279770B2 (en) * | 2004-08-26 | 2007-10-09 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
KR100630725B1 (ko) * | 2004-12-17 | 2006-10-02 | 삼성전자주식회사 | 매립된 비트라인을 가진 반도체 소자 및 그 제조방법 |
US7186607B2 (en) * | 2005-02-18 | 2007-03-06 | Infineon Technologies Ag | Charge-trapping memory device and method for production |
US7365382B2 (en) * | 2005-02-28 | 2008-04-29 | Infineon Technologies Ag | Semiconductor memory having charge trapping memory cells and fabrication method thereof |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US20060223267A1 (en) * | 2005-03-31 | 2006-10-05 | Stefan Machill | Method of production of charge-trapping memory devices |
KR100715228B1 (ko) * | 2005-06-18 | 2007-05-04 | 삼성전자주식회사 | 곡면 구조를 갖는 소노스 메모리 소자 및 그 제조방법 |
US8338887B2 (en) | 2005-07-06 | 2012-12-25 | Infineon Technologies Ag | Buried gate transistor |
US7399673B2 (en) * | 2005-07-08 | 2008-07-15 | Infineon Technologies Ag | Method of forming a charge-trapping memory device |
EP1746645A3 (de) | 2005-07-18 | 2009-01-21 | Saifun Semiconductors Ltd. | Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung |
US7468299B2 (en) * | 2005-08-04 | 2008-12-23 | Macronix International Co., Ltd. | Non-volatile memory cells and methods of manufacturing the same |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US8116142B2 (en) * | 2005-09-06 | 2012-02-14 | Infineon Technologies Ag | Method and circuit for erasing a non-volatile memory cell |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US9159568B2 (en) * | 2006-02-04 | 2015-10-13 | Cypress Semiconductor Corporation | Method for fabricating memory cells having split charge storage nodes |
KR100762636B1 (ko) | 2006-02-14 | 2007-10-01 | 삼성전자주식회사 | 네트워크 단말의 음성 검출 제어 시스템 및 방법 |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
KR100732304B1 (ko) * | 2006-03-23 | 2007-06-25 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조 방법 |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US20070257293A1 (en) * | 2006-05-08 | 2007-11-08 | Josef Willer | Semiconductor memory device and method for production of the semiconductor memory device |
KR100739532B1 (ko) | 2006-06-09 | 2007-07-13 | 삼성전자주식회사 | 매몰 비트라인 형성 방법 |
JP5200940B2 (ja) * | 2006-12-15 | 2013-06-05 | 日本電気株式会社 | 不揮発性記憶装置 |
US7859050B2 (en) * | 2007-01-22 | 2010-12-28 | Micron Technology, Inc. | Memory having a vertical access device |
JP2008192803A (ja) | 2007-02-05 | 2008-08-21 | Spansion Llc | 半導体装置およびその製造方法 |
DE102007038925A1 (de) * | 2007-08-17 | 2009-02-19 | Qimonda Ag | Verfahren zum Herstellen einer aktiven Vorrichtung einer Halbleiterspeichervorrichtung, und eine Halbleiterspeichervorrichtung |
US7778073B2 (en) * | 2007-10-15 | 2010-08-17 | Qimonda Ag | Integrated circuit having NAND memory cell strings |
KR20100106017A (ko) * | 2009-03-23 | 2010-10-01 | 삼성전자주식회사 | 리세스 채널 트랜지스터 및 이의 제조 방법 |
WO2011142850A2 (en) | 2010-01-22 | 2011-11-17 | The Regents Of The University Of California | Etchant-free methods of producing a gap between two layers, and devices produced thereby |
US8999769B2 (en) * | 2012-07-18 | 2015-04-07 | Globalfoundries Singapore Pte. Ltd. | Integration of high voltage trench transistor with low voltage CMOS transistor |
US9054133B2 (en) | 2011-09-21 | 2015-06-09 | Globalfoundries Singapore Pte. Ltd. | High voltage trench transistor |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
JPH0412573A (ja) * | 1990-05-02 | 1992-01-17 | Matsushita Electron Corp | 不揮発性半導体記憶装置およびその製造方法 |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5392237A (en) * | 1992-09-25 | 1995-02-21 | Rohm Co., Ltd. | Semiconductor memory device with EEPROM in trench with polysilicon/metal contacting to source and drain in virtual ground type array |
EP0967654A1 (de) * | 1998-06-26 | 1999-12-29 | EM Microelectronic-Marin SA | Nichtflüchtiges Halbleiterspeicherbauelement |
US6127226A (en) * | 1997-12-22 | 2000-10-03 | Taiwan Semiconductor Manufacturing Company | Method for forming vertical channel flash memory cell using P/N junction isolation |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3167457B2 (ja) * | 1992-10-22 | 2001-05-21 | 株式会社東芝 | 半導体装置 |
DE19545903C2 (de) * | 1995-12-08 | 1997-09-18 | Siemens Ag | Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung |
DE19600423C2 (de) * | 1996-01-08 | 2001-07-05 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
KR100223198B1 (ko) * | 1996-04-11 | 1999-10-15 | 다니구찌 이찌로오, 기타오카 다카시 | 높은 강복 전압을 갖는 반도체 장치 및 그 제조 방법 |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
DE19638439C2 (de) * | 1996-09-19 | 2000-06-15 | Siemens Ag | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement und Herstellungsverfahren |
JP3641103B2 (ja) | 1997-06-27 | 2005-04-20 | 株式会社東芝 | 不揮発性半導体メモリ装置の製造方法 |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6013551A (en) * | 1997-09-26 | 2000-01-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby |
US6124608A (en) * | 1997-12-18 | 2000-09-26 | Advanced Micro Devices, Inc. | Non-volatile trench semiconductor device having a shallow drain region |
US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
JP3223885B2 (ja) * | 1998-08-17 | 2001-10-29 | 日本電気株式会社 | 電界効果型半導体メモリ装置およびその製造方法 |
US6194741B1 (en) * | 1998-11-03 | 2001-02-27 | International Rectifier Corp. | MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance |
US6204529B1 (en) * | 1999-08-27 | 2001-03-20 | Hsing Lan Lung | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
US6376315B1 (en) * | 2000-03-31 | 2002-04-23 | General Semiconductor, Inc. | Method of forming a trench DMOS having reduced threshold voltage |
DE10039441A1 (de) | 2000-08-11 | 2002-02-28 | Infineon Technologies Ag | Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren |
US6445037B1 (en) * | 2000-09-28 | 2002-09-03 | General Semiconductor, Inc. | Trench DMOS transistor having lightly doped source structure |
-
2001
- 2001-06-21 DE DE10129958A patent/DE10129958B4/de not_active Expired - Fee Related
- 2001-07-06 US US09/900,649 patent/US6548861B2/en not_active Expired - Lifetime
-
2002
- 2002-06-12 KR KR1020037016748A patent/KR100629383B1/ko not_active IP Right Cessation
- 2002-06-12 JP JP2003507893A patent/JP3976729B2/ja not_active Expired - Fee Related
- 2002-06-12 EP EP02742805A patent/EP1399972A2/de not_active Withdrawn
- 2002-06-12 CN CNB028125134A patent/CN100524774C/zh not_active Expired - Fee Related
- 2002-06-12 WO PCT/DE2002/002141 patent/WO2003001600A2/de active Application Filing
- 2002-06-17 TW TW091113148A patent/TW567612B/zh not_active IP Right Cessation
-
2003
- 2003-02-28 US US10/378,101 patent/US6794249B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
JPH0412573A (ja) * | 1990-05-02 | 1992-01-17 | Matsushita Electron Corp | 不揮発性半導体記憶装置およびその製造方法 |
US5392237A (en) * | 1992-09-25 | 1995-02-21 | Rohm Co., Ltd. | Semiconductor memory device with EEPROM in trench with polysilicon/metal contacting to source and drain in virtual ground type array |
US6127226A (en) * | 1997-12-22 | 2000-10-03 | Taiwan Semiconductor Manufacturing Company | Method for forming vertical channel flash memory cell using P/N junction isolation |
EP0967654A1 (de) * | 1998-06-26 | 1999-12-29 | EM Microelectronic-Marin SA | Nichtflüchtiges Halbleiterspeicherbauelement |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 016, no. 162 (E - 1192) 20 April 1992 (1992-04-20) * |
Also Published As
Publication number | Publication date |
---|---|
CN1526170A (zh) | 2004-09-01 |
EP1399972A2 (de) | 2004-03-24 |
KR100629383B1 (ko) | 2006-09-29 |
CN100524774C (zh) | 2009-08-05 |
US20030151091A1 (en) | 2003-08-14 |
TW567612B (en) | 2003-12-21 |
US6548861B2 (en) | 2003-04-15 |
DE10129958B4 (de) | 2006-07-13 |
DE10129958A1 (de) | 2003-01-09 |
US6794249B2 (en) | 2004-09-21 |
JP3976729B2 (ja) | 2007-09-19 |
JP2004531084A (ja) | 2004-10-07 |
US20030006428A1 (en) | 2003-01-09 |
WO2003001600A2 (de) | 2003-01-03 |
KR20040007749A (ko) | 2004-01-24 |
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