WO2002071414A1 - Film conducteur transparent depose sur un substrat et procede de fabrication d'un filtre colore - Google Patents

Film conducteur transparent depose sur un substrat et procede de fabrication d'un filtre colore Download PDF

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Publication number
WO2002071414A1
WO2002071414A1 PCT/JP2002/002135 JP0202135W WO02071414A1 WO 2002071414 A1 WO2002071414 A1 WO 2002071414A1 JP 0202135 W JP0202135 W JP 0202135W WO 02071414 A1 WO02071414 A1 WO 02071414A1
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WO
WIPO (PCT)
Prior art keywords
power supply
inert gas
film
substrate
layer
Prior art date
Application number
PCT/JP2002/002135
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English (en)
Japanese (ja)
Inventor
Takuma Kobayashi
Hiroshi Fukada
Takeharu Hirooka
Eiji Kamijo
Yoshifumi Aoi
Susumu Tsubota
Takashi Imamichi
Kunihiko Sakayama
Muneo Sasaki
Original Assignee
Ueyama Electric Co., Ltd.
Ryukoku University
Shiga Prefecture
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Application filed by Ueyama Electric Co., Ltd., Ryukoku University, Shiga Prefecture filed Critical Ueyama Electric Co., Ltd.
Publication of WO2002071414A1 publication Critical patent/WO2002071414A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Definitions

  • the present invention relates to a method for manufacturing a transparent conductive film laminated substrate and a color filter.
  • TFT displays which are the mainstream of displays for notebook computers and desktop computers, are configured so that light from a light source passes through TFTs, liquid crystal molecules, and color filters to form an image on a substrate.
  • the color filter 1 has a light-shielding film, a color resist film, and an indium-tin-oxide (ITO) conductive film formed on a transparent substrate.
  • ITO indium-tin-oxide
  • Japanese Unexamined Patent Publication (Kokai) No. 63-197703 discloses a method in which a glass substrate on which a light-shielding film and a color resist film are formed is heated to 180 ° and a target comprising a tin-indium oxide sintered body Sputtering on a glass substrate on which a light-shielding film and a color resist film have been formed by reactive sputtering in an argon atmosphere containing oxygen. It discloses a method for forming a film.
  • the ITO conductive film obtained by the method described in Japanese Patent Application Laid-Open No. 63-197703 is composed of a single layer and has a low conductivity (that is, a large specific resistance).
  • a disadvantage that.
  • In order to improve the conductivity of the ITO conductive film it is necessary to increase the thickness of the conductive film.
  • the thickness of the ITO conductive film is increased, the transparency of the conductive film is impaired. Inevitable. Therefore, the ITO conductive film obtained by this method does not satisfy both high conductivity and transparency.
  • JP-A-6-28932 discloses a method for forming an ITO conductive film on the surface of an organic resin formed on a color resist film.
  • This method comprises the steps of (a) direct current magnetron sputtering on an organic resin surface using a tin-indium oxide sintered body as a target in an atmosphere of argon gas or a mixed gas of argon and oxygen containing 3% by volume of oxygen. Covers the 3 to 30 nm thick crystal nucleation layer (first layer) (B) a step of growing crystal nuclei by annealing at a temperature at which the organic resin of at least 100 is not deteriorated in an atmosphere in which the crystal nucleation layer is depressurized, and (c) crystal nucleation.
  • magnetron sputtering is performed on the first layer of the substrate heated to 30 or more to form a second layer of ITO film.
  • the method described in the above-mentioned Japanese Patent Application Laid-Open No. 6-28932 is also applicable to a method for preparing a capacitor in an IT conductive film.
  • the purpose is to increase the rear mobility and consequently lower the specific resistance of the ITO conductive film, that is, to improve the conductivity.
  • the above method has a disadvantage that the substrate used is limited because the substrate is exposed to a high temperature of 300 ° C. or more.
  • the method includes a step of cooling the substrate to 250 ° C. or lower in a reduced-pressure atmosphere and then returning the atmosphere to atmospheric pressure.
  • the substrate heated to 300 ° C. or more is returned to atmospheric pressure at that temperature, the substrate heated to 300 ° C. or more comes into contact with oxygen and is oxidized. Necessary to prevent degradation. 'Therefore, the method disclosed in JP-A-6-28932 requires a complicated operation of heating or cooling the substrate to a high temperature, and is not practical.
  • An object of the present invention is to provide a method for manufacturing a substrate on which a conductive film having high conductivity and excellent transparency is laminated.
  • Another object of the present invention is to provide a method for producing a color filter having high conductivity and excellent transparency.
  • the inventor has conducted various studies to achieve the above object.
  • a specific power source is used as a power source for forming the ITO film of each layer, and a specific sputtering is performed.
  • sputtering in a gas atmosphere, it is possible to increase the carrier concentration in the ITO film, and thus to obtain a substrate having a high conductivity and a laminated conductive film with excellent transparency. Came out.
  • a color filter having high conductivity and excellent transparency can be obtained. I found something to be done.
  • a target of an indium-tin-tin oxide sintered body is formed by using a DC (direct current) power supply or a DC + RF (high frequency) power supply in an inert gas or a mixed gas atmosphere of an inert gas and oxygen. Sputtering to form an ITO film, and
  • At least one target selected from the group consisting of indium monotin oxide sintered compact and indium oxide sinter sintered compact is treated with a DC power supply, an RF power supply or a DC + RF power supply using an inert gas.
  • the present invention provides a method for manufacturing a transparent conductive film laminated substrate including:
  • the present invention provides: (1) sputtering of a target of an indium-tin-tin oxide sintered body using a DC power supply or a DC + RF power supply in an inert gas or a mixed gas atmosphere of an inert gas and oxygen; Process of forming the first layer IT ⁇ film,
  • the present invention provides a method for manufacturing a transparent conductive film laminated substrate including:
  • the present invention provides a transparent conductive film laminated substrate manufactured by the above various methods.
  • the present invention relates to a method for manufacturing a color filter in which a light-shielding film, a color resist film, and at least two conductive films are sequentially formed on a transparent substrate, wherein the conductive film forming step is performed.
  • the target of the indium tin oxide sintered body was sputtered in an inert gas or a mixed gas atmosphere of an inert gas and oxygen using a 0 ⁇ power supply or a 1 ⁇ ⁇ + 1 power supply, and the IT ⁇ forming a film, and
  • a method for producing a color filter comprising:
  • the present invention relates to a method for producing a color filter in which a light-shielding film, a color resist film, and at least three conductive films are sequentially formed on a transparent substrate, wherein the conductive film forming step comprises the steps of: Forming a first ITO film on a substrate by sputtering the first substrate using a DC power supply or a DC + RF power supply in an inert gas or a mixed gas atmosphere of an inert gas and oxygen.
  • the present invention provides a color filter manufactured by the above various methods.
  • the transparent conductive film laminated substrate of the present invention is manufactured by forming at least two layers of an ITO film or at least one ITO film and at least one indium oxide film on the substrate. Is done.
  • the number of ITO films formed on the substrate may be two, three, four, five or more. Further, the indium oxide film may have one layer, two layers or more. Each of these ITO films and the like is formed on a substrate by a known method.
  • ITO film or an oxide film by sputtering a target of the sintered body or indium oxide sintered body in an inert gas atmosphere using a DC power supply, an RF power supply or a DC + RF power supply. I have.
  • the carrier density in the conductive film is increased, the mobility of the carrier is hardly reduced, and the conductive film is formed under some sputtering conditions. Since the carrier density is high and the carrier mobility is high, the conductive film has high conductivity. .
  • the transparent conductive film laminated substrate of the present invention is manufactured by, for example, the following methods I to C. Method A:
  • the target of the indium-tin-tin oxide sintered body is sputtered using a DC power supply or a DC + RF power supply in an inert gas or a mixed gas atmosphere of an inert gas and oxygen to form a target on the substrate.
  • the substrate may be any of known substrates, for example, a glass substrate, a glass epoxy resin substrate, a ceramic substrate, an alumina substrate, a silicon substrate, an aluminum nitride substrate, a metal substrate, an IMS substrate, a metal core substrate, an enamel substrate, and a resin.
  • Substrates are examples.
  • the resin material of the resin substrate include polycarbonate, polyether sulfone, polyimide, acrylic resin, cyclic polyolefin (eg, Zeonor resin manufactured by Zeon Corporation), polyarylenit, polyethylene naphthalate (PEN), and polyethylene. Telephone rate (PET).
  • a glass substrate is preferable.
  • a glass substrate for a color filter can be widely used, and specifically, a soda lime glass substrate and the like can be exemplified.
  • the size, thickness, and the like of the substrate can be appropriately selected depending on the purpose of use of the transparent conductive film laminated substrate.
  • the target used in Method A is an indium tin oxide sintered body.
  • This sintered body is publicly known, for example, a material obtained by sufficiently mixing fine powdered tin oxide and fine powdered oxide and press-molding it into a predetermined shape, for example, firing at a high temperature of about 1000 to about 1500. Can be used.
  • the content of tin oxide in the sintered body is not limited, but is usually about 3 to about 30% by weight, preferably about 5 to about 15% by weight.
  • First step first, using a sintered body of indium monotin oxide as a target, this is sputtered on a substrate to form a first layer of ITO film on the substrate (hereinafter, this step is referred to as "First step").
  • the sputtering conditions in this first step are as follows.
  • the power supply should be DC power supply or DC + RF power supply.
  • the power supply is a DC power supply.
  • the conditions such as the applied power vary depending on the size of the target and cannot be unconditionally determined. However, assuming that the target has a size of 5 inches ⁇ 15 inches, it is as follows.
  • the applied power is usually about 0.1 to about 1 kW, preferably about 0.3 to about 0.6 kW for a DC power supply.
  • the power of the DC power supply is usually about 0.1 to about 1 kW, preferably about 0.2 to about 0.6 kW;
  • the power of the F power supply is usually about 0.1 to about 3 kW , Preferably from about 0.2 to about 0.6 KW.
  • the DCZRF power ratio should be appropriately adjusted within the range of about 0.1 to about 10.
  • the frequency is usually about 6.78 to about 27.12 MHz, preferably about 13.56 MHz.
  • the temperature of the substrate varies depending on the type of the substrate. For example, when a glass substrate is used, the temperature is usually around room temperature to less than 300, preferably about 140 to about 250.
  • the sputtering gas is an inert gas or a mixed gas of an inert gas and oxygen, preferably a mixed gas of an inert gas and oxygen.
  • inert gas known inert gases can be widely used, and typical examples thereof include argon gas.
  • the gas pressure is usually about 0.1 to about 1 Pa, preferably about 0.2 to about 1 Pa. 0.8 Pa.
  • the oxygen content in the mixed gas is about 1% by volume or less, preferably about 0.6% by volume or less.
  • the thickness of the ITO film formed as the first layer on the substrate by the first step is generally about 5 to about 100 nm, preferably about 10 to about 70 nm, and particularly preferably about 0.15 to about 50 nm. It is.
  • an indium-tin oxide sintered body is used as a target, which is then sputtered on the first layer formed on the substrate, and a second layer of ITO film is formed on the first layer. (Hereinafter, this step is referred to as “second step”).
  • the sputtering conditions in this second step are as follows.
  • the type of power supply can be DC power, RF power or DC to: F power.
  • the power supply is an RF power supply.
  • the applied power is usually about 0.1 to about 1 kW, preferably about 0.3 to about 0.6 kW for a DC power supply.
  • the power of the RF power supply is usually about 0.1 to about 3 kW, preferably about 1 to about 1.8 kW.
  • the power of the DC power supply is usually about 0.1 to about 1 kW, preferably about 0.2 to about 0.6 kW, and the power of the RF power supply is usually about 0.1 to about 3 kW, preferably Is about 0.2 to about 0.6 KW.
  • the DC / RF power ratio may be appropriately adjusted within a range of about 0.1 to about 10.
  • the frequency is typically about 6.78 to about 27.12 MHz, preferably about
  • the temperature of the substrate on which the first layer is formed is usually around room temperature to less than 300 ", preferably about 140 to about 250 ° C.
  • the sputtering gas is an inert gas.
  • inert gas known inert gases can be widely used, and typical examples thereof include argon gas.
  • the gas pressure is usually from about 0.1 to about 1 Pa, preferably from about 0.2 to about 0.8 Pa.
  • the thickness of the ITO film formed as the second layer on the first layer by the second step is usually about 5 to about 100 nm, preferably about 10 to about 70 nm, and particularly preferably about 30 to about 70 nm. It is about 70 nm.
  • two sputterings can be performed while maintaining the substrate temperature at about 140 to about 250 ° C. to form a two-layer ITO film on the substrate.
  • the substrate temperature is sufficiently low, even if the atmosphere around the substrate is immediately returned to the atmospheric pressure, there is no possibility that the substrate is deteriorated. Cooling can be completed in a short time, on the order of minutes.
  • Method A includes the following embodiments.
  • At least one type of target selected from the group consisting of an indium tin oxide sintered body and an indium oxide sintered body is placed in an inert gas atmosphere using a DC power source, an RF power source, or a DC + RF power source.
  • a method for producing a transparent conductive film laminated substrate comprising:
  • (A-2) The method for producing a transparent conductive film laminated substrate according to (A-1), wherein the power supply in the step (1) is a DC power supply, and the power supply in the step (2) is an RF power supply.
  • A-3 The sputtering in (1) is performed in a mixed gas atmosphere of inert gas and oxygen, and the sputtering in (2) is performed in an inert gas atmosphere.
  • step (1) The sputtering in step (1) is performed in a mixed gas atmosphere of inert gas and oxygen, and the sputtering in step (2) is performed in an inert gas atmosphere.
  • step (2) The method according to (A-7), wherein the oxygen content in the mixed gas of the inert gas and oxygen in the step ⁇ ) is about 1% by volume or less.
  • A-10) The method for producing a transparent conductive film laminated substrate according to (A-1), wherein the power supply in the step (1) is a DC + RF power supply, and the power supply in the step (2) is an RF power supply.
  • A-11) The method for producing a transparent conductive film laminated substrate according to (A-10), wherein the sputtering in the step (1) is performed in an inert gas atmosphere.
  • the substrate and target used in this method are the same as in method A.
  • method B first, an indium-tin oxide sintered body is used as a target, which is sputtered on a substrate to form a first layer of ITO film on the substrate (hereinafter, this step is referred to as “ The first step ”).
  • the sputtering conditions in this first step are as follows.
  • the power supply shall be DC power supply or DC + RF power supply.
  • the power supply is a DC power supply.
  • the conditions such as the applied power and the like vary depending on the size of the get per night, etc., and cannot be determined unconditionally. However, assuming that the target has a size of 5 inches ⁇ 15 inches, it is as follows.
  • the applied power is usually about 0.1 to about 1 kW, preferably about 0.3 to about 0.6 kW for a DC power supply.
  • the power of the DC power supply is usually about 0.1 to about 1KW, preferably about 0.2 to about 0.6_KW, and the power of the RF power supply is usually about 0.1 to about 3KW , Preferably from about 0.2 to about 0.6 KW.
  • the DCZRF power ratio should be appropriately adjusted within the range of about 0.1 to about 10. If an RF power supply is used, the frequency is typically about 6.78 to about 27.12 MHz, preferably about 13.56 MHz.
  • the temperature of the substrate varies depending on the type of the substrate. For example, when a glass substrate is used, the temperature is usually around room temperature to less than 300 ° C, preferably about 140 to about 250 ° C.
  • the sputtering gas is an inert gas or a mixed gas of an inert gas and oxygen.
  • inert gas known inert gases can be widely used, and typical examples thereof include argon gas.
  • the gas pressure is usually about 0.1 to about 1 Pa, preferably about 0.2 to about 0.8 Pa.
  • the oxygen content in the mixed gas is about 1% by volume or less, preferably about 0.6% by volume or less.
  • the oxygen content in the mixed gas is about 0.6% by volume or less, preferably about 0.4% by volume or less, more preferably about 0.2% by volume or less.
  • the thickness of the ITO film formed as the first layer on the substrate by the first step is usually about 5 to about 100 nm, preferably about 10 to about 70 nm, and particularly preferably about 15 to about 50 nm. .
  • an indium-tin oxide sintered body is used as a target, which is sputtered on the first layer formed on the substrate, and the second layer of the ITO film is formed on the first layer. (Hereinafter, this step is referred to as “second step”).
  • the sputtering conditions in this second step are as follows.
  • the type of power supply shall be DC power supply, RF power supply or DC + RF power supply.
  • the applied power is usually about 0.1 to about 1 kW, preferably about 0.3 to about 0.6 kW for a DC power supply.
  • the power of the RF power supply is usually about 0.1 to about 3 kW, preferably about 1 to about 1.8 kW.
  • the power of the DC power supply is usually about 0.1 to about 1 kW, preferably about 0.2 to about 0.6 kW, and the power of the RF power supply is usually about 0.1 to about 3 kW, preferably Is about 0.2 to about 0.6 KW.
  • the DC / RF power ratio may be appropriately adjusted within a range of about 0.1 to about 10.
  • the frequency is usually about 6.78 to about 27.12 MHz, preferably about
  • the temperature of the substrate on which the first layer is formed is usually around room temperature to less than 300X, preferably about 140 to about 250 ° C.
  • the sputtering gas is an inert gas.
  • inert gas known inert gases can be widely used, and typical examples thereof include argon gas. Can be.
  • the gas pressure is usually from about 0.1 to about 1 Pa, preferably from about 0.2 to about 0.8 Pa.
  • the thickness of the ITO film formed as the second layer on the first layer by the second step is usually about 5 to about 150 nm, preferably about 10 to about 100 nm, and particularly preferably about 20 to about 70 nm. nm.
  • an indium-tin oxide sintered body is used as a target, and this is applied to the second layer formed on the substrate in an atmosphere of an inert gas or a mixed gas of an inert gas and oxygen.
  • a third layer of IT ⁇ film is formed on the second layer by sputtering (hereinafter, this step is referred to as “third step”).
  • the sputtering conditions in the third step may be the same as the sputtering conditions in the first step.
  • the sputtering conditions in the third step are as follows.
  • the power supply type is DC power supply or DC + RF power supply.
  • the applied power is usually about 0.1 to about 1 kW, preferably about 0.3 to about 0.6 kW for a DC power supply.
  • the power of the DC power supply is usually about 0.1 to about 1 kW, preferably about 0.2 to about 0.6 kW
  • the power of the RF power supply is usually about 0.1 to about 3 kW, Preferably it is from about 0.2 to about 0.6 KW.
  • the DCZRF power ratio should be appropriately adjusted within the range of about 0.1 to about 10.
  • the frequency is typically about 6.78 to about 27.12 MHz, preferably about
  • the temperature of the substrate is usually around room temperature to less than 300 ° C, preferably about 140 to about 250.
  • the sputtering gas is a mixed gas of an inert gas and oxygen.
  • inert gas known inert gases can be widely used, and typical examples thereof include argon gas.
  • the gas pressure is usually about 0.1 to about 1 Pa, preferably about 0.2 to about 0.8 Pa.
  • the acid in the mixed gas of inert gas and oxygen is about 1% by volume or less, preferably about 0.6% by volume or less, and in the case of a DC + RF power supply, the oxygen content in the mixed gas is about 0.6% by volume or less, preferably about 0.4% by volume or less.
  • the thickness of the ITO film formed as the third layer on the second layer by the third step is usually about 5 to about 100 nm, preferably about 10 to about 70 nm, particularly preferably about 1 to about 100 nm. 5 to about 50 nm.
  • the sputtering in the first step and the third step may be performed under exactly the same conditions, or the sputtering in the first step and the third step may be performed by appropriately changing the sputtering conditions. .
  • the power supplies in the steps (1), (2) and (3) be DC power supplies.
  • the steps (1) and (3) are performed in an atmosphere of a mixed gas of an inert gas and oxygen
  • the step (2) is performed in an atmosphere of an inert gas.
  • the oxygen content in the mixed gas of the inert gas and oxygen in the steps (1) and (3) is about 1% by volume or less, preferably about 0.2 to about 0.6% by volume. .
  • the power supply in the steps (1) and (3) is a DC power supply
  • the power supply in the step (2) is an RF power supply.
  • the steps (1) and (3) are preferably performed in an atmosphere of a mixed gas of an inert gas and oxygen
  • the step (2) is preferably performed in an atmosphere of an inert gas.
  • the oxygen content in the mixed gas of the inert gas and oxygen in the step (1) and the step (3) should be about 1% by volume or less, preferably about 0.1 to about 0.6% by volume. .
  • the power supply in the steps (1) and (3) is a DC + RF power supply
  • the power supply in the step (2) is an RF power supply.
  • the step (3) is preferably performed in an atmosphere of an inert gas or a mixed gas of an inert gas and oxygen
  • the step (2) is preferably performed in an atmosphere of an inert gas.
  • the oxygen content in the mixed gas of the inert gas and oxygen in the step is preferably about 0.2% by volume or less.
  • both the power supplies in the steps (1) and (3) are DC power supplies, and the power supply in the step (2) is DC + RF power supplies.
  • (Step D and Step (3) are preferably performed in an atmosphere of a mixed gas of an inert gas and oxygen, and Step (2) is preferably performed in an atmosphere of an inert gas.
  • the oxygen content in the solution is from about 0.1 to about 0.6% by volume.
  • the fourth layer made of the ITO film may be formed on the third layer by sputtering under the same sputtering conditions as in the second step.
  • the transparent conductive film laminated substrate on which the four-layered IT layer is laminated is particularly preferable in terms of high conductivity and transparency.
  • the fifth layer made of the ITO film is formed by sputtering under the same sputtering conditions as in the first step or the third step. May be.
  • one or more ITO films may be further formed on the fifth layer by alternately repeating the same sputtering conditions as in the second step and the same sputtering conditions as in the first step.
  • method B three or more times of sputtering are performed while maintaining the substrate temperature at about 140 to about 25 (TC, to form an ITO film composed of three or more layers on the substrate.
  • the temperature of the substrate is sufficiently low, so that even if the atmosphere around the substrate is immediately returned to the atmospheric pressure, there is no risk that the substrate will be degraded. can do.
  • Method B includes the following embodiments.
  • the target of the indium-tin-tin oxide sintered body is sputtered using a DC power supply or a DC + RF power supply in an inert gas or a mixed gas atmosphere of an inert gas and oxygen to form a target on the substrate.
  • a method for manufacturing a transparent conductive film laminated substrate comprising:
  • step (1) and the step (3) are performed in an atmosphere of a mixed gas of an inert gas and oxygen, and the step (2) is performed in an atmosphere of an inert gas. the method of.
  • step (1) and the step (3) are performed in an atmosphere of a mixed gas of an inert gas and oxygen, and the step (2) is performed in an atmosphere of an inert gas. the method of.
  • step (1) and the step (3) are performed in an atmosphere of a mixed gas of an inert gas and oxygen, and the step (2) is performed in an atmosphere of an inert gas. the method of.
  • Step (1) and step (3) are performed in an atmosphere of a mixed gas of an inert gas and oxygen, and step (2) is performed in an atmosphere of an inert gas. the method of.
  • the target of the indium oxide sintered body was sputtered in an inert gas or a mixed gas atmosphere of inert gas and oxygen using a DC power supply, RF power supply or DC + RF power supply, and the target was placed on the first layer.
  • the target used in the step (1) is an indium-tin-tin oxide sintered body
  • the target used in the step (2) is an indium-tin-oxide sintered body.
  • the power supply in the step (1) is preferably a DC power supply
  • the power supply in the step (2) is preferably an RF power supply.
  • step (1) is preferably performed in an atmosphere of a mixed gas of an inert gas and oxygen
  • step (2) is preferably performed in an atmosphere of an inert gas.
  • the oxygen content in the mixed gas of the inert gas and oxygen in the step (1) is preferably about 1% by volume or less, and more preferably about 0.6% by volume or less.
  • the thickness of the ITO film formed as the first layer on the substrate by the step (1) is usually about 5 to about 100 nm, preferably about 10 to about 70 nm, and particularly preferably about 150 nm. ⁇ 50 nm.
  • the thickness of the indium oxide film formed as the second layer on the first layer is usually about 5 to about 150 nm, preferably about 10 to about 10 O nm, particularly Preferably it is about 20 to about 70 nm.
  • the sputtering is performed twice while maintaining the substrate temperature at about 140 to about 25 to form an I ⁇ film and an indium oxide film on the substrate.
  • the substrate temperature is sufficiently low, even if the atmosphere around the substrate is immediately returned to the atmospheric pressure, there is no possibility that the substrate is deteriorated. Cooling can be completed in a matter of minutes.
  • Method C includes the following embodiments.
  • a target of indium tin oxide sintered body is sputtered in an inert gas or a mixed gas atmosphere of an inert gas and oxygen by using a power source of 0 or 13 ⁇ + 11 1.
  • a method for manufacturing a transparent conductive film laminated substrate comprising:
  • the oxygen content in the mixed gas of the inert gas and oxygen in the step (1) is about 1% by volume or less.
  • the target of the indium-tin oxide sintered body is sputtered using a DC power supply or a DC + RF power supply in an inert gas or a mixed gas atmosphere of an inert gas and oxygen, and the target is put on a substrate.
  • the substrate and target used in this method are the same as in method A.
  • the oxygen content in the mixed gas of the inert gas and oxygen in the step (2) is The oxygen content in the mixed gas of the inert gas and oxygen in step (1) and step (3) is preferably equal to or lower than the oxygen content in the mixed gas in step (1).
  • the content is about 1% by volume or less, preferably about 0.2 to about 0.6% by volume, and the oxygen content in the mixed gas of the inert gas and oxygen in step (2) is about 0.3% by volume or less. It is preferably about 0.2% by volume or less.
  • the thickness of the ITO film formed as the first layer on the substrate by the step (1) is usually about 5 to about 100 nm, preferably about 10 to about 70 nm, and particularly preferably about 15 to about 50 nm. is there. .
  • the thickness of the ITO film formed as the second layer on the first layer is usually about 5 to about 150 nm, preferably about: I0 to about 100 nm, and particularly preferably about 20 to about 100 nm. ⁇ 70 nm.
  • the thickness of the IT film formed as the third layer on the second layer is about 5 to about 100 nm, preferably about 10 to about 70 nm, and particularly preferably about 15 to about 70 nm. It is about 50 nm.
  • the fourth layer made of the ITO film may be formed on the third layer by sputtering under the same sputtering conditions as in the step (2). Further, a fifth layer made of an ITO film may be formed on the fourth layer by sputtering under the same sputtering conditions as in step () or (3).
  • one or more ITO films may be further formed on the fifth layer by alternately repeating the sputtering conditions similar to the step (2) and the sputtering conditions similar to the step (1). Good.
  • the substrate temperature is maintained at about 140 to about 250 ° C three times or Can perform more sputtering to form a TO.TO film composed of three or more layers on the substrate.
  • the substrate temperature is sufficiently low, even if the atmosphere around the substrate is immediately returned to the atmospheric pressure, there is no possibility that the substrate is deteriorated. Cooling can be completed in a short time, on the order of minutes.
  • Method D includes the following embodiments.
  • the target of the indium-tin oxide sintered body was sputtered in an inert gas or a mixed gas atmosphere of an inert gas and oxygen using a 0 power source or a 0 + 1 power source. Forming a first 'layer IT ⁇ film thereon,
  • the above target is sputtered in an inert gas or a mixed gas atmosphere of an inert gas and oxygen using a 0 ° power source or a 0 ° + power source to form a third layer ITO film on the second layer.
  • a method for manufacturing a transparent conductive film laminated substrate comprising:
  • the oxygen content in the mixed gas of the inert gas and oxygen in the steps (1) and (3) is about 0.1% by volume or less, and in the mixed gas of the inert gas and the oxygen in the step (2).
  • the method according to the above (D-3), wherein the oxygen content of the compound is not more than about 0.3% by volume.
  • the oxygen content in the mixed gas of the inert gas and oxygen in the step (1) and the step (3) is about 0.2 to about 0.6% by volume;
  • Steps (i) and (3) are performed in an inert gas atmosphere.
  • the sputtering in the above methods A to D includes known sputtering, for example, magnetron sputtering, reactive sputtering, ECR sputtering and the like. Manufacture of color filters
  • the color filter of the present invention is obtained by forming a light-shielding film, a color resist film, and an ITO conductive film on a transparent substrate.
  • An overcoat layer may be formed between the color resist film and the ITO conductive film.
  • the transparent substrate is not limited, and a transparent substrate usually used in this kind of field can be widely used.
  • the transparent substrate include, for example, glass plates such as alkali glass and non-alkali glass, and resin plates such as polycarbonate and polymethacrylate. Of these, alkali-free glass is preferred.
  • the size and thickness of the transparent substrate can be appropriately selected according to the purpose of use of the color filter.
  • a light-shielding film forming material generally used in this field can be widely used.
  • the light-shielding film forming material include metals, metal oxides, and resins in which pigments are dispersed.
  • the metal include chromium, molybdenum, tantalum, and aluminum.
  • the metal oxide include chromium oxide and aluminum oxide.
  • the resin in which the pigment is dispersed include a carbon dispersed resin and a black pigment dispersed resin.
  • metal chromium, chromium oxide, resin dispersed in carbon black, resin dispersed in black pigment, and the like are preferable from the viewpoints of light-shielding properties and film-forming properties.
  • the material used to form the color resist film is a color resin commonly used in this field.
  • a wide variety of dist film forming materials can be used.
  • the color resist film forming material include an acrylic resin, a polyester resin, a polyvinyl alcohol resin, a polyimide resin, or a mixture of these resins in which a red, green, or blue colorant is dispersed. . .
  • a resin commonly used in this field can be widely used, and examples thereof include an epoxy resin, an acrylic resin, and a polyimide resin.
  • a known light-shielding film forming method, a color resist film forming method, and an overcoat film forming method can be widely used. .
  • At least two ITO conductive films are formed on a transparent substrate on which a light-shielding film, a color resist film, and, if necessary, an overcoat film are further formed.
  • the color filter of the present invention comprises, for example, a method of forming a light-shielding film and a color resist film on a transparent substrate by a known method, and further forming an overcoat film as necessary. It is manufactured by forming a conductive film according to the conductive film forming method described above.
  • the carrier (free electron) density in the conductive film can be increased, and the carrier mobility can be hardly reduced, or the carrier mobility can be maintained or increased. Therefore, a transparent conductive film laminated substrate having high conductivity can be obtained.
  • the conductive film formed on the substrate has high conductivity, it is not necessary to increase the film thickness, and excellent transparency can be secured.
  • the method of the present invention it is possible to manufacture a transparent conductive film laminated substrate having high conductivity, that is, having a small specific resistance value. ADVANTAGE OF THE INVENTION According to the method of this invention, the transparent conductive film laminated substrate excellent in transparency can be manufactured.
  • the substrate temperature it is not necessary to maintain the substrate temperature at a temperature of 300 ° C. or higher, and in some cases, even at a relatively low temperature of 140 ° C. to 250 ° C.
  • Guidance An electrolytic film can be formed. Therefore, there is no restriction on the type of substrate used.
  • the method of the present invention is practical because it is not necessary to cool from a high temperature of 300 ° C. or more under vacuum to 25 Ot: or less.
  • a desired ITO film can be formed on a substrate only by changing the type of power supply and the sputtering gas at the time of sputtering, which is industrially advantageous.
  • the method of the present invention does not require a special treatment of annealing treatment, and is extremely practical.
  • a color filter having an ITO conductive film having high conductivity, that is, having a small specific resistance value can be manufactured.
  • a power filter having excellent transparency can be manufactured.
  • the following is an example of manufacturing a transparent conductive film laminated substrate.
  • a glass substrate (20 Ommx26 Omm, thickness 0.7 mm) is placed in a preheating zone and preheated to a predetermined temperature for 60 minutes under high vacuum.
  • a gas is introduced so that the argon gas and oxygen have a predetermined ratio, and the total pressure (sputter pressure) is adjusted to 0.7 Pa, and then the gas is introduced. Apply a predetermined power to the target and start discharging.
  • the preheated substrate is moved during the discharge at a moving speed of 1.O m / min. Is formed. Reciprocate on the target until the film thickness reaches the specified value.
  • a gas is introduced so that the argon gas and the oxygen have a predetermined ratio, and the total pressure is adjusted to a predetermined pressure, and then applied to the target using a predetermined power supply to start discharging. .
  • the preheated substrate After confirming that the glow discharge on the target has stabilized, the preheated substrate is moved at a speed of 1.O mZ during the discharge, and a second layer of transparent material of a predetermined thickness is placed on the substrate. A conductive film is formed. Reciprocate on the target until the film thickness reaches the specified value.
  • the same operation as that for forming the first transparent conductive film is repeated. return.
  • the same operation as the operation of forming the second layer of the transparent conductive film is repeated.
  • the glass substrate after film formation was moved to a vacuum chamber, and allowed to cool for 3 minutes. Then, the vacuum chamber was replaced with nitrogen gas, and the glass substrate on which the transparent conductive film was formed was taken out.
  • Indium-tin oxide sintered body (tin oxide content 10% by weight, the same applies hereinafter) in an atmosphere of a mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputter pressure 0.7 Pa)
  • the target was sputtered using a DC power supply (power 0.5 KW) to form a first layer (thickness 438.8 A) of an ITO film on a glass substrate maintained at 200.
  • the indium-tin oxide sintered target was sputtered using an RF power source (power 1.5 KW, frequency 13.56 MHz), A second layer (thickness: 438.8 A) made of an ITO film was formed on the first layer to obtain a transparent conductive film laminated substrate of the present invention.
  • an indium monotin oxide sintered target was sputtered using an RF power supply (power 1.5 KW, frequency 13.56 MHz) to 200.
  • a first layer (thickness: 553.9A) consisting of an ITO film was formed on the maintained glass substrate.
  • the indium-tin oxide sintered body target was connected to a DC power supply (power supply). 0.5 KW) to form a second layer (thickness: 553.9 A) of an ITO film on the first layer to obtain a conductive film laminated substrate.
  • the sheet resistance of the transparent conductive film laminated substrate of the present invention obtained in Example 1 and the conductive film laminated substrate obtained in Comparative Example 1 was determined.
  • the sheet resistance was determined as follows. That is, 200mmX 260mm, thickness 67 measurement points were evenly provided on the film surface formed on a 0.7 mm glass substrate, and the resistance values were determined using a four-probe resistance meter (MCP-T600) manufactured by Mitsubishi Chemical Corporation. The average value was obtained, and the sheet resistance value was further obtained by multiplying by a constant of 4.5424.
  • the film thickness was measured as follows. That is, the film thickness of the conductive film formed on the glass substrate was measured using a two-dimensional fine shape measuring device (ET4000) manufactured by Kosaka Laboratory. For the measurement, five measurement points were set on a glass substrate, masked with Kavton tape, the mask was peeled off after film formation, the film thickness was measured, and the average value was taken as the film thickness.
  • E4000 two-dimensional fine shape measuring device manufactured by Kosaka Laboratory.
  • the specific resistance value ( ⁇ ⁇ cm) was obtained by multiplying the sheet resistance value obtained by the above four probe method by the film thickness.
  • the transmittance (%) of the transparent conductive film laminated substrate of the present invention obtained in Example 1 and the conductive film laminated substrate obtained in Comparative Example 1 was determined. That is, using a spectrophotometer manufactured by Hitachi, Ltd. (U-2010), the transmittance of the conductive film laminated substrate was measured in the wavelength range of 200 to 900 nm, and the transmittance of the glass substrate (blank) before film formation was measured. The transmittance (%) at 620 nm, 540 nm and 460 nm was calculated with the transmittance (%) as 100%.
  • an indium monotin oxide sintered body target was connected to a DC power supply (power 0.5KW).
  • a first layer (433 A in thickness) of an ITO film was formed on a glass substrate maintained at 200 ° C.
  • indium monostannate A second layer (thickness: 433 A) of an ITO film was formed on the first layer by sputtering an oxide getter using a DC power supply (power: 0.5 KW).
  • the indium-tin-tin oxide sintered body target was connected to a DC power supply (power 0 5KW) to form a third layer (thickness: 433 A) made of an ITO film on the second layer to obtain a transparent conductive film laminated substrate of the present invention.
  • a DC power supply power 0 5KW
  • the indium monotin oxide sintered target was sputtered using a DC power supply (power 0.5 KW), and the glass maintained at 200 ° C.
  • a single layer (thickness: 1686.6 mm) of an IT film was formed on the substrate to obtain a conductive film laminated substrate.
  • a target of indium tin oxide sintered body was connected to a DC power supply (power 0.5 KW). )
  • a single layer film thickness 1504.3 A made of an ITO film on a glass substrate maintained at 200 ° C. to obtain a conductive film laminated substrate.
  • the sheet resistance value ( ⁇ / port) and the specific resistance of the transparent conductive film laminated substrate of the present invention obtained in Example 2 and the conductive film laminated substrates obtained in Comparative Examples 2 and 3 were obtained in the same manner as described above.
  • the values ( ⁇ ⁇ cm) and the transmittance (%) at 620 nm, 540 nm and 460 nm were determined.
  • an indium-tin-tin oxide sintered target was connected to a DC power supply (power 0.5 KW).
  • a first layer (446.5 A thick) of an ITO film was formed on a glass substrate maintained at 200.
  • the indium-tin oxide sintered target was sputtered using an RF power supply (power 1.5 KW, frequency 13.56 GHz).
  • a second layer (film thickness 446.5 A) made of an ITO film was formed on the first layer.
  • the indium-tin oxide sintered body target was connected to a DC power supply (power supply). 0.5 KW) to form a third layer (thickness: 446.5 A) made of an ITO film on the second layer to obtain a transparent conductive film laminated substrate of the present invention.
  • a target of indium-tin oxide sintered body was connected to a DC power source (power: 0.5 KW). ) was used to form a first layer (177.8 mm thick) of an IT film on a glass substrate maintained at 200.
  • a target of indium monotin oxide sintered body was connected to a DC power source (electric power).
  • a third layer (177.8 A in thickness) of an IT film was formed on the second layer by sputtering using 0.5 KW).
  • the indium-tin oxide sintered compact target was connected to a DC power source (power 0 5KW) to form a fifth layer (177.8 A in thickness) made of an ITO film on the fourth layer to obtain a transparent conductive film laminated substrate of the present invention.
  • an indium-tin oxide sintered compact target was connected to a DC power supply (power 0.5KW).
  • a first layer (182.1 A film thickness) made of an ITO film was formed on a glass substrate maintained at 200 ° C.
  • the indium-tin oxide sintered target was sputtered using an RF power source (power 1.5 KW, frequency 13.56 MHz), A second layer (thickness: 455.3 A) of an ITO film was formed on the first layer.
  • a target of indium monotin oxide sintered body was connected to a DC power source (electric power). 0.5 KW) to form a third layer (182.1 A in thickness) of an ITO film on the second layer, thereby obtaining a transparent conductive film laminated substrate of the present invention.
  • an indium-tin oxide sintered body target was applied using a DC power supply (power 5KW).
  • a first layer (208 A thick) of an ITO film was formed on a glass substrate maintained at 299 ° C.
  • an indium monostannic oxide sintered body was obtained by an RF power source (power 1.5 KW, frequency 13.56 MHz).
  • the second layer (film thickness 51.99 A) consisting of the ITO film was formed on the first layer by sputtering using z).
  • a target of indium monotin oxide sintered body was connected to a DC power source (electric power). 0.5 KW) to form a third layer (208 A in thickness) made of an ITO film on the second layer to obtain a transparent conductive film laminated substrate of the present invention.
  • the sheet resistance value ( ⁇ noro), the specific resistance value ( ⁇ ⁇ cm), 620 nm, 540 nm and 460 nm were obtained in the same manner as described above.
  • the transmittance (%) at was determined.
  • Example 3 Except that the sputtering for forming the second layer on the first layer is performed in an atmosphere of a mixed gas of argon gas and oxygen (oxygen content 0.18% by volume, sputter pressure 0.7 Pa). In the same manner as in Example 3, a transparent conductive film laminated substrate of the present invention was obtained. The thicknesses of the first, second and third layers formed on this substrate were all 488.1 A.
  • Sputtering for forming the second layer on the first layer is performed in an atmosphere of a mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering pressure 0.7 Pa). Except for the above, a transparent conductive film laminated substrate of the present invention was obtained in the same manner as in Example 3. The thickness of the first, second and third layers formed on this substrate was 432.1 A.
  • the sheet resistance ( ⁇ / port), the specific resistance ( ⁇ ⁇ cm), and the 620 nm and 540 nm were obtained in the same manner as described above. And the transmittance (%) at 460 nm.
  • a target of indium-tin oxide sinter was applied to a DC + RF power supply (DC: power 0.4 KW, RF: power 0.4 KW, frequency 13.56 MHz) )
  • DC power 0.4 KW
  • RF power 0.4 KW, frequency 13.56 MHz
  • the indium monotin oxide sintered target was sputtered using an RF power source (power 1.5 KW, frequency 13.'56 MHz). Then, a second layer (film thickness 451.9 A) made of an ITO film was formed on the first layer.
  • Example 10 In an atmosphere of argon gas (sputtering pressure 0.7 Pa), a target of indium monotin oxide sinter was connected to a DC + RF power supply (DC: power 0.4 KW, RF: power 0.4 KW, frequency 13 56 MHz) to form a third layer (451.9 A film thickness) of an ITO film on the second layer.
  • DC power 0.4 KW
  • RF power 0.4 KW
  • frequency 13 56 MHz DC + RF power supply
  • the sputtering for forming the first layer on the glass substrate and the sputtering for forming the third layer on the second layer were performed using a mixed gas of argon gas and oxygen (oxygen content 0.18% by volume, sputtering pressure 0.7 Pa).
  • the transparent conductive film-laminated substrate of the present invention was obtained in the same manner as in Example 9 except that the process was performed in the atmosphere of (3).
  • the thickness of each of the first, second and third layers formed on this substrate was 470.6 A.
  • the sheet resistance value ( ⁇ ⁇ ⁇ ), the specific resistance value ( ⁇ ⁇ cm), 620 nm, 540 nm and 460 The transmittance (%) at nm was determined.
  • a target of indium monotin oxide sintered body was DC-powered (power: 0.5KW)
  • a first layer (467.5 mm thick) of an IT film was formed on a glass substrate maintained at 200 ° C by sputtering.
  • an indium oxide sintered compact was obtained by an RF power source (power A second layer of indium oxide (467.5 A in thickness) was formed on the first layer by sputtering at 1.5 KW at a frequency of 13,56 MHz.
  • a target of indium monotin oxide sintered body was connected to a DC power source (power 0.5 KW) to form an IT ⁇ film on the second layer.
  • a third layer (having a thickness of 467.5 A) was formed to obtain a transparent conductive film laminated substrate of the present invention.
  • Indium-tin oxide sintered target was sputtered using a DC power supply (power 0.5 KW) under an atmosphere of argon gas (spray pressure 0.7 Pa), and the glass maintained at 200 A first layer (470.8 mm thick) consisting of an IT ⁇ film was formed on the substrate.
  • the indium oxide sintered body target was connected to a DC power source (power 0 5KW) to form a second layer of indium oxide 'film (thickness: 470.8A) on the first layer.
  • the sheet resistance ( ⁇ cm), specific resistance ( ⁇ ⁇ cm), The transmittance (%) at nm and 460 nm was determined.
  • a target of indium tin oxide sintered compact was (Power 0.5 KW) to form a first layer (thickness 288.5 A) of an ITO film on a glass substrate maintained at 150 ° C. .
  • an indium-tin-tin oxide sintered body target was sputtered using an RF power source (power 1.5 KW, frequency 13.56 MHz), A second layer (thickness: 673.3 A) composed of an ITO film was formed on one layer to obtain a transparent conductive film laminated substrate of the present invention.
  • a target of indium-tin oxide sintered body was DC-powered (power 0.5KW).
  • a single layer (thickness: 1069.2 A) made of an ITO film was formed on a glass substrate maintained at 150 ° C. by using, to obtain a conductive film laminated substrate.
  • a glass substrate maintained at 150 ° C by sputtering an indium monotin oxide sintered target using a DC power supply (power 0.5 KW) in an atmosphere of argon gas (spray pressure 0.7 Pa).
  • a single layer (928.0 A in thickness) of an ITO film was formed thereon to obtain a conductive film laminated substrate.
  • a target of indium monotin oxide sintered body was DC-powered (power 0.5KW)
  • a single layer (thickness 1406.5 A) of an ITO film was formed on a glass substrate maintained at 150 ° C. by using a sputtering method to obtain a conductive film laminated substrate.
  • the indium monotin oxide sintered target was set to 0 ⁇ + 1 ⁇ power (0 ⁇ : power 0.4 KW, 1: power 0.4 KW, Sputtering using a frequency of 13.56 MHz) to form a single-layer film (thickness: 1420.2 mm) consisting of an IT film on a glass substrate maintained at 150 to obtain a conductive film laminated substrate .
  • the sheet resistance value ( ⁇ / ⁇ ) and the specific resistance value were obtained in the same manner as described above. ( ⁇ ⁇ cm) and transmittance (%) at 620 nm, 540 nm and 460 nm. ⁇
  • a target of indium-tin oxide sintered body was connected to a DC power supply (power 0.5 KW). )
  • a first layer thickness 30.8.6 A of an ITO film on a glass substrate maintained at 150.
  • an indium / monotin oxide sintered body target was irradiated using an RF power supply (power 1.5 KW, frequency: 13.56 MHz).
  • a second layer (thickness: 720.OA) of an ITO film was formed on the first layer.
  • a target of indium monotin oxide sintered body was connected to a DC power source (electric power).
  • a third layer (thickness 308.6 A) of an ITO film was formed on the second layer by sputtering using 0.5 KW).
  • the sheet resistance ( ⁇ / port), the specific resistance ( ⁇ ⁇ cm), and the transmittance (%) at 620 nm, 540 nm and 460 nm were determined.
  • Sheet resistance (Omega slag) is 8.93, the specific resistance value (Omega - cm) was 1. 84X 10 one 4.
  • Table 8 shows the electrical properties (carrier density and mobility) of the conductive films of some typical transparent conductive film laminated substrates obtained above. The carrier density and the mobility of the conductive film were measured at 23 using Resi Test 8320 manufactured by Toyo Technicor Co., Ltd.
  • the first layer consisting of an ITO film was formed on a glass substrate on which a light-shielding film, a color resist film, and an overcoat layer were formed, and maintained at 200. Formed.
  • an indium-tin oxide sintered compact was obtained using an RF power supply (power 1.5 KW, frequency 13.56 MHz).
  • a second layer made of an ITO film was formed on the first layer.
  • a target of indium monotin oxide sintered body was connected to a DC power source (power supply). 0.5 KW) to form a third layer (thickness: 262.OA) of an ITO film on the second layer to obtain a color filter 1 of the present invention.
  • the first layer consisting of an ITO film is formed on a glass substrate on which a light-shielding film, a color resist film, and an overcoat layer are formed, which is maintained at 20 by sputtering. I let it.
  • the indium monotin oxide sintered body target was sputtered using a power supply (electric power 1.5 KW, frequency 13.56 MHz), A second layer (thickness: 698.8 A) of an ITO film was formed on the first layer.
  • a mixed gas of argon gas and oxygen oxygen content: 0.542% by volume, sputter pressure: 0.7 Pa
  • the indium-tin oxide sintered body target was connected to a DC power supply (power supply). 0.5 KW) to form a third layer (thickness: 232.9 A) made of an ITO film on the second layer to obtain a color filter of the present invention.
  • the indium monotin oxide 'sintered target was replaced with a power source (0: 0.4 KW, RF: power 0.4 KW, Sputtering using a frequency of 13.56 MHz) was maintained at 20 CTC, and a single-layer film (thickness 1145.7) consisting of an ITO film was formed on a glass substrate on which a light-shielding film, color resist film, and overcoat layer were formed. A) was formed to obtain a color filter.
  • the sheet resistance was determined as follows. That is, 67 measurement points are provided evenly on the film surface formed on the glass substrate, and the resistance value is calculated using a four-probe resistance meter (MCP-T600) manufactured by Mitsubishi Chemical Corporation. The sheet resistance was determined by multiplying the value by a constant of 4.542.
  • the film thickness was measured as follows. That is, the film thickness of the conductive film formed on the glass substrate was measured using a two-dimensional fine shape measuring device (ET4000) manufactured by Kosaka Laboratory. For the measurement, five measurement points were set on a glass substrate, masked with Kavton tape, the mask was peeled off after film formation, the film thickness was measured, and the average value was taken as the film thickness.
  • E4000 two-dimensional fine shape measuring device manufactured by Kosaka Laboratory.
  • the specific resistance value ( ⁇ ⁇ cm) is obtained by multiplying the sheet resistance value obtained by the above four-probe method by the film thickness. I asked for it.
  • the transmittance (%) of the color filters of the present invention obtained in Examples 15 and 16 and the color filters obtained in Comparative Examples 8 and 9 was determined. That is, the transmittance (%) of the conductive film laminated substrate was measured in the wavelength range of 200 to 90 O nm using a spectrophotometer (U-210) manufactured by Hitachi, Ltd. Assuming that the transmittance (%) of the glass substrate (blank) on which the light-shielding film and the color resist film are formed is 100%, the transmittance (%) at 62 nm, 540 nm, and 450 nm is ) was calculated. Table 9 shows the results.

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Abstract

L'invention concerne un procédé permettant de fabriquer un substrat sur lequel un film conducteur transparent est déposé. Ledit procédé consiste 1) à former un film ITO sur un substrat par pulvérisation d'une cible d'un corps fritté d'oxyde d'indium-étain dans une atmosphère de gaz inerte ou de mélange de gaz inerte et d'oxygène à l'aide d'une alimentation C. C. ou C. C. + R. F.; et 2) à former un film ITO et/ou un film d'oxyde d'indium sur le film ITO formé à l'étape 1) par pulvérisation d'au moins un type de cible sélectionnée dans le groupe constitué par un corps fritté d'oxyde d'indium-étain et un corps fritté d'oxyde d'indium à l'aide d'une alimentation C. C., d'une alimentation R. F. ou d'une alimentation C. C. + R. F. Un filtre coloré présentant une conductivité élevée et une excellente transparence est fabriqué par formation d'un film ITO sur un substrat sur lequel un film de protection contre la lumière et un film de résine colorée sont formés.
PCT/JP2002/002135 2001-03-07 2002-03-07 Film conducteur transparent depose sur un substrat et procede de fabrication d'un filtre colore WO2002071414A1 (fr)

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CN115667573A (zh) * 2020-05-25 2023-01-31 日东电工株式会社 透光性导电性片的制造方法

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CN104465933B (zh) * 2013-09-18 2018-03-06 上海蓝光科技有限公司 Ito薄膜的制备方法及采用该ito薄膜的led芯片的制作方法
CN105331936B (zh) * 2014-06-18 2018-05-08 北京北方华创微电子装备有限公司 ITO薄膜的沉积方法及GaN基LED芯片

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CN115667573A (zh) * 2020-05-25 2023-01-31 日东电工株式会社 透光性导电性片的制造方法

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