WO2002071414A1 - Substrate with deposited transparent condcutive film and method for fabricating color filter - Google Patents

Substrate with deposited transparent condcutive film and method for fabricating color filter Download PDF

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Publication number
WO2002071414A1
WO2002071414A1 PCT/JP2002/002135 JP0202135W WO02071414A1 WO 2002071414 A1 WO2002071414 A1 WO 2002071414A1 JP 0202135 W JP0202135 W JP 0202135W WO 02071414 A1 WO02071414 A1 WO 02071414A1
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WIPO (PCT)
Prior art keywords
film
sputtering
inert gas
layer
substrate
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PCT/JP2002/002135
Other languages
French (fr)
Japanese (ja)
Inventor
Takuma Kobayashi
Hiroshi Fukada
Takeharu Hirooka
Eiji Kamijo
Yoshifumi Aoi
Susumu Tsubota
Takashi Imamichi
Kunihiko Sakayama
Muneo Sasaki
Original Assignee
Ueyama Electric Co., Ltd.
Ryukoku University
Shiga Prefecture
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Priority to JP2001-63842 priority Critical
Priority to JP2001063842 priority
Priority to JP2001-63835 priority
Priority to JP2001063835 priority
Application filed by Ueyama Electric Co., Ltd., Ryukoku University, Shiga Prefecture filed Critical Ueyama Electric Co., Ltd.
Publication of WO2002071414A1 publication Critical patent/WO2002071414A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Abstract

A method for fabricating a substrate on which a transparent conductive film is deposited comprises the steps of forming an ITO film on a substrate by sputtering a target of an indium-tin oxide sintered body in an atmosphere of an inert gas or of a mixture gas of an inert gas and oxygen by using a DC power supply or a DC+RF power supply and forming an ITO film and/or indium oxide film on the ITO film formed at step (1) by sputtering at least one kind of target selected from an indium-tin oxide sintered body and an indium oxide sintered body by suing a DC power supply, an RF power supply, or a DC+RF power supply. A color filter having a high conductivity and an excellent transparency is fabricated by forming an ITO film on a substrate on which a light-shielding film and a color resist film are formed.

Description

The transparent conductive film laminated board and force color filter manufacturing method of

Technical field

The present invention relates to a method for producing a transparent conductive film laminated substrate and the color fill evening one.

Background technology

Laptops, desktops Paso. TFT display is the mainstream, such as near the display, light from the light source TFT, passes through the liquid crystal molecules, the color one filter one, is configured to form an image on a substrate.

The color filter one is for light-shielding film on a transparent substrate, a color resist film and an indium tin Okisaido (ITO) conductive layer was formed.

As a method for producing color one filter, for example, JP 6 3 1 9 7 9 0 3 No. Gazette, the method described in such as JP-A-6 2 8 9 3 2 JP are known.

JP 6 3 - 1 9 7 9 0 3 Patent Publication, the light-shielding film and heating the glass substrate on which the color resist film is formed in 1 8 0, Target Tsu bets consisting of tin one indium oxide sintered body by sputtering or by reactive sputtering evening ring evening one Getting bets made of indium-tin alloy in argon fog 'in 囲気 containing oxygen, ITO conductive light shielding film and the force color resist film on a glass substrate formed It shows a method of forming a film open.

However, JP 6 3 - ITO conductive film obtained in 1 9 7 9 0 3 JP methods described is made of a single layer, low conductivity (i.e. resistivity is greater) there is a drawback. If an attempt to improve the conductivity of the ITO conductive film, it becomes necessary to increase the thickness of the iota TO conductive film, when the film thickness of the ITO conductive film, that the transparency of the conductive film is impaired inevitable will not. Therefore, I TO conductive film that is obtained by this method does not satisfy both high conductivity and transparency.

Hei 6 2 8 9 3 2 No. discloses a method of forming the ITO conductive layer to the organic resin table surface formed on the color resist film. The method comprises: (a) organic resins surface, with tin one indium oxide sintered body as a target, in a mixed gas atmosphere of argon and oxygen containing 3 volume% argon gas or oxygen, DC magnetron Ron sputtering step you coating thickness. 3 to 3 0 nm of the crystalline nucleation layer (first layer) by, is (b) in an atmosphere under reduced pressure the nucleation layer, Mimitsu 1 0 0 or more of the organic resin in a mixed gas atmosphere of step and (c) argon and oxygen containing oxygen 3% by volume on the nucleation layer is grown crystal nuclei by Aniru with no degradation temperature, low resistance layer by magnetron sputtering (the and a step of coating the second layer).

To lower the specific resistance of the ITO conductive film, there are two ways. One is a method of increasing the mobility of carriers (free electrons), the other is a method of increasing the density of the carrier (free charge child). Sho 6 3 - 1 9 7 9 0 3 No. method described in Japanese is to increase the carrier mobility, low specific resistance value of the ITO conductive film as a result, an attempt to improve i.e. conductivity it is intended to.

However, according to this method, although the carrier mobility increased, it therefore Kiyaria degree decreases with, the effect of improving the conductivity is insufficient.

Further, the method of JP-A 6 2 8 9 3 2 discloses, it is necessary to perform special processing of Aniru process, not practical.

Further, as a method for forming the ITO conductive film, for example, JP-A-2 - methods are known wherein like 1 8 9 8 1 6 JP.

The above publication,

And have you in an atmosphere containing a mixed gas of reduced pressure inert gas or an inert gas and oxygen, using a target of indium tin oxide sintered body, onto a substrate that is maintained at 2 0 0 or less, the magneto port Nsupa' evening ring, steps that form a ITO film of the first layer,

Heating under reduced pressure the substrate to 3 0 0 ° or more C,

In an atmosphere comprising a mixed gas of a reduced pressure inert gas and oxygen, the use of a target, the magnetron Spa Ttaringu on the first layer of the substrate which is heated to 3 0 or more, ITO film of the second layer the step of forming the,

Step of returning the cooling after the atmosphere below 2 5 0 ° C the substrate in an atmosphere whose pressure is reduced to atmospheric pressure

Through, discloses a method of forming an ITO conductive film composed of two layers on the substrate. The above method of JP-A-6 2 8 9 3 described in 2 JP also increases the wire carrier rear mobility in IT_〇 conductive film, a low specific resistance value of the ITO conductive film as a result, that the conductivity it is intended to improve the.

However, according to this method, although the carrier mobility increases, key Yaria density does not become high, the effect of improving the conductivity is insufficient.

Further, in the above-described method, since the substrate is exposed to a high temperature of more than 3 0 0 ° C, there is a disadvantage that restricted the substrate that is used.

Further, in the above method, or by heating from 2 0 0 ° C or less to 3 0 0 ° C over a high temperature under a reduced pressure, it is necessary to cool the 3 0 0 or more high temperature below 2 5 0 ° C, these It takes a long time to Caro heat and cooling. The method includes the step of returning the cooling after the atmosphere to atmospheric pressure below 2 5 0 ° C the substrate in an atmosphere whose pressure is reduced. This process, when returned to atmospheric pressure substrate heated above 3 0 0C while its temperature, 3 0 0 ° pressurized heated substrates above C is in contact with oxygen, is oxidized, resulting substrate it is necessary to prevent the deterioration. . 'Thus, the method of JP-A-6 2 8 9 3 2 No. is heated or the substrate to high temperatures, requires complex operations or to cooling, it is not practical.

Inventions of disclosure

One object of the present invention, with a high conductivity, is that excellent conductive film transparency provides a method for manufacturing a substrate are laminated.

Another object of the present invention, with a high conductivity, is to provide a method for producing excellent color filter transparency.

The present inventors have conducted various studies to achieve the above object. As a result, when forming the ITO film on the substrate to form a ITO film of at least two layers on a substrate, and and certain sputtering respectively with a supply of specific as a power source for forming an ITO film of these layers by a sputtering child in a gas atmosphere, it is possible to increase the carrier concentration in the ITO film, we saw that includes a thus high conductivity, moreover substrate excellent conductive film transparency are laminated is obtained It was out had.

Further, by the product layer the conductive film in the light-shielding film and the color resist layer is formed on a transparent substrate, with a high conductivity, color filters one having excellent transparency was found that the resulting et al.

Furthermore, we have found that even cowpea to replace some of the plurality of ITO films indium oxide film, a desired conductive film laminated substrate and the color fill evening one is obtained. The present invention has been completed based on these findings.

The present invention provides (1) a target of indium tin oxide sintered body, DC (direct current) power or DC + RF (radio frequency) using the power supply, an inert gas or an inert gas and a mixed gas atmosphere of oxygen in by sputtering, the step of forming the ITO film and,

(2) at least one target was exposed, selected from the group consisting of indium tin oxide sintered body, and indium Sani 匕物 sintered body, DC power supply, an RF power supply or DC + RF power used, inert gas step by sputtering in an atmosphere to form an ITO film and Z or oxide Injiumu film ITO film formed in the above (1)

To provide a transparent conductive film manufacturing method of a multilayer substrate including a.

The present invention provides (1) a target of indium tin oxide sintered body, using a DC power supply or DC + RF power, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, on the substrate forming a IT_〇 film of the first layer, the

(2) the target, using a DC power supply, an RF power supply or DC + RF power to form a IT 〇 film of the second layer on the first layer by sputtering in a mixed gas atmosphere of an inert gas and oxygen process , as well as

And (3) the target, using a DC power supply or DC + RF power, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, to form an ITO film of the third layer on the second layer a process

To provide a transparent conductive film manufacturing method of a multilayer substrate including a.

The present invention provides a transparent conductive film laminated substrate manufactured by the above various methods. The present invention, the light-shielding film on a transparent substrate, a color one resist film and a manufacturing method of a color filter one of sequentially forming a conductive film of at least two layers, a conductive film forming step

(1) the target of indium tin oxide sintered body, 0_Rei power or 1 ^ 〇 + 1 using the power supply, and sputter-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, IT forming a 〇 film and,

(2) indium tin oxide sintered body and at least one target was exposed, selected from the group consisting of Injiumu oxide sintered body, using a DC power supply, RF power or DC + RF power, an inert gas atmosphere forming a I tO membrane and Z or indium oxide film in the sputtering evening to ring ITO film formed in the above (1)

To provide a method of manufacturing a color one filter, including.

The present invention, the light-shielding film on a transparent substrate, a color resist film and a conductive film of at least three layers A method of manufacturing a color filter for sequentially formed, a conductive film forming step (1) of indium tin oxide sintered body evening one target, using a DC power supply or DC + RF power, by sputtering-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, to form an ITO film of the first layer on the substrate ,

(2) the target, DC power supply, - using the F power source or DC + RF power, an ITO film of the second layer to sputter evening first layer and the ring in a mixed gas atmosphere of an inert gas and oxygen the step of and,

(3) the evening one target, using a DC power supply or DC + RF power, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, I TO film of the third layer on the second layer the step of forming the

To provide a method of manufacturing a color filter one containing.

The present invention provides a color one filter one produced by the above various methods.

A transparent conductive film laminated substrate of the present invention DETAILED DESCRIPTION OF THE INVENTION, prepared by I TO film or comprising at least two layers on a substrate to form an indium oxide film at least one layer of ITO film and at least one layer of It is.

I TO film formed on the substrate, two layers, three layers, four layers, may be filed with 5 or more layers. Also, oxidation Injiu 厶膜 is one layer, it may be two or more layers. Each of ITO film or the like is deposited on the substrate by a known method. In the present invention, at least one of ITO film composed of two layers or more, (1) indium - targets stannate compound sintered body, using a DC power supply or DC + RF power, inert gas or formed by sputtering in a mixed gas atmosphere of an inert gas and oxygen, further to the way the ITO film thus formed, (2) indium - tin oxide sintered body or indium oxide sintered body the target, DC power supply, an RF power supply or DC + RF source, and essential and that an ITO film or Sani匕 Injiumu film by sputtering in an inert gas atmosphere.

(1) and conductive film step through the formation of (2), the carrier density in the conductive film is high and the mobility of the carrier is not reduced almost conductive film in in some of the sputtering conditions of Kiyaria density is high and since the mobility size Kunar of Kiyaria, the conductive film becomes one with high conductivity. .

A transparent conductive film laminated substrate of the present invention is more particularly prepared by the process Α~ how C shown for example below. Method A:

Method A,

(1) the target of indium tin oxide sintered body, using a DC power supply or DC + RF source, and sputtering-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, the on board forming a I tO film of one layer and,

(2) the target, DC power supply, an RF power supply or DC + RF power has a step of forming an ITO film of the second layer on the first layer by sputtering in an inert gas atmosphere.

The substrate may be any of the known substrate, for example a glass substrate, Garasuepo xylene resin substrate, a ceramic substrate, an alumina substrate, a silicon substrate, nitride Aruminiu beam substrate, a metal substrate, IMS substrate, a metal core substrate, enamel substrate, resin etc. substrate that can be cited. As the resin material of the resin substrate, for example, polycarbonate Bok, polyether sulfone, polyimide, acrylic resin, cyclic polyolefin (e.g., Nippon Zeon's Zeonoa resin), Poriarirenito, polyethylene naphthalate over preparative (PEN), polyethylene and the like terephthalate evening rate (PET). Among these substrates, a glass substrate is preferable. As the glass substrate, for example, it can be widely used glass substrates for color filters, specifically exemplified soda-lime glass substrate. The size of the substrate, such thickness can be appropriately selected by a transparent conductive film purpose use of the multilayer substrate. Data one target used in the method A is indium tin oxide sintered body. The sintered body is known, for example, fine powder of tin oxide and a fine powder oxide Injiumu mixed well, and press-molded into a predetermined shape, and those fired at for example about 1000 to about 1500 high-temperature it can be used. The content of tin oxide in the sintered body, but are not limited to, usually about 3 to about 30 wt%, preferably about 5 to about 15 wt%.

In the method A, first, indium Ichisuzusani 匕物 sintered body by sputtering a use record it on a substrate as a target, on the substrate Ru to form I TO film of the first layer (hereinafter this step ) referred to as a "first-step".

Sputtering conditions of the first step is as follows.

Power, DC power supply and to ¾ or a DC + RF power. Power is preferably a DC power supply.

Conditions such as the applied power is Do it may vary Depends on the size of the data one target Iga, assuming the target is a size 5 inches X 15 inches, are as follows.

Applied power, if the DC power source, usually about 0.1 to about 1 KW, preferably from about 0.3 to about 0.5 6KW. For DC + RF power, power of the DC power source is usually from about 0.1 to about 1 KW, preferably from about 0.5 2 to about 0.5 6KW,; power F power, usually from about 0.1 to about 3KW , preferably from about 0.5 2 to about 0.5 6KW. DCZRF power ratio is better to appropriately adjusted within the range of from about 0.5 to about 10. When using a RF power, frequency is generally about 6. 78 to about 27. 12 MHz, and preferably about 13. 56 MHz.

Temperature of the substrate varies depending on the type of substrate, when a glass substrate is used for example, less than at normal room temperature near to 300, preferably about 140 to about 250.

Sputtering gas, a mixed gas of an inert gas or an inert gas and oxygen, preferred properly is a mixed gas of inert gas and oxygen. The inert gas can be used widely known inert gas, such as argon gas can be cited as a representative.

Gas pressure (sputtering evening pressure) is usually from about 0.1 to about 1 P a, preferably from about 0.5 2 to about 0.5 8P a.

When a mixed gas of inert gas and oxygen in a first step, the oxygen content of the mixed gas is about 1 vol% or less, preferably about 0.6% by volume.

The first step, the thickness of the IT O film formed as the first layer on the substrate is generally about 5 to about 100 nm, preferably from about 10 to about 70 nm, particularly preferably about .15~ about 50 nm it is.

In the method A, then indium - have use tin oxide sintered body as a target, which was sputtered to a first layer formed on a substrate, I TO film of the second layer on the first layer to form (hereinafter, this step of "second step").

Sputtering conditions of the second step are as follows.

Type of power supply, the power to DC power, or DC DOO and RF Power: F power and be, Ru. Power is preferably a RF power supply.

Applied power, if the DC power source, usually about 0.1 to about 1 KW, preferably from about 0.3 to about 0.5 6KW. Power of the RF power source is usually from about 0.1 to about 3KW, preferably about 1 to about 1. 8KW. For DC + RF power, power of the DC power source is usually from about 0.1 to about 1 KW, preferably from about 0.5 2 to about 0.5 6KW, power of the RF power source is usually from about 0.1 to about 3KW, preferably it is about 0, is 2 to about 0. 6KW. DC / RF power ratio is better to appropriately adjusted within the range of from about 0.5 to about 10. If Ru using an RF power source frequency is usually about 6. 78 to about 27. 12 MHz, preferably about

13. is 56 MHz.

The temperature of the substrate on which the first layer is formed, usually less than about room temperature to 300 ", and preferably from about 140 to about 250 ° C.

Sputtering gas is an inert gas. The inert gas can be used widely known inert gas, such as argon gas can be cited as a representative.

Gas pressure is typically from about 0.1 to about 1 P a, Ru preferably from about 0.5 2 to about 0. 8 P a der.

The by a two-step, the thickness of the I TO film formed as a second layer on the first layer is generally about 5 to about 100 nm, preferably from about 10 to about 70 nm, particularly preferably from about 30 to about 7 is 0 nm.

In the method A, carried out twice sputtering while maintaining the substrate temperature at about 1 4 0 to about 2 5 0 ° C, Ru can be formed an ITO film composed of two layers on the substrate. In this case, since the substrate temperature is sufficiently low, be returned immediately atmospheric pressure atmosphere around the substrate, there is no fear of deterioration substrate. Cooling can be completed in a short time in minutes.

Methods A, includes the following aspects.

(A-1)

(1) the evening Getto indium tin oxide sintered body, 0_Rei power or zero. + Scale? Using the power supply, and sputtering evening-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, to form an ITO film on the substrate and,

(2) Injiumu - tin oxide sintered body and at least one target was exposed, selected from the group consisting of Injiumu oxide sintered body, using a DC power supply, RF power or DC + RF power, an inert gas atmosphere in sputtering to the step of forming the ITO film and Ζ or oxide Injiumu film IT_〇 film formed in the above (1)

Transparent conductive film manufacturing method of a multilayer substrate including a.

(A - 2) (1) the power of the process and a DC power supply, (2) the power of the process and the RF power source (A-1) a transparent conductive film manufacturing method of a multilayer substrate according to.

(A-3) (1) have rows sputtering evening ring in a mixed gas atmosphere of an inert gas and oxygen process, according to (2) a sputtering process conducted in an inert gas atmosphere (A- 2) the method for producing a transparent conductive film laminated substrate.

(A - 4) (1) The method according to the oxygen content in the mixed gas of inert gas and oxygen steps is about 1 volume% or less (A- 3).

(A-5) (I) the oxygen content of about 0 inert gas and mixed gas of oxygen process. The method according to 6 volume% or less is the (Alpha-4).

(Alpha-6) (1) the power of the process and a DC power supply, (2) the power of the process and DC power supply (A-1) a transparent conductive film manufacturing method of a multilayer substrate according to.

(A-7) (1) have line sputtering in a mixed gas atmosphere of an inert gas and oxygen process, (2) a sputtering process conducted in an inert gas atmosphere transparent according to (A- 6) (a-8) α) the method according to the oxygen content in the mixed gas of inert gas and oxygen steps is about 1 volume% or less (A- 7).

(A-9) (1) the oxygen content of approximately 0 in the mixed gas of inert gas and oxygen process. The method according to 6 volume% or less is the (A- 8).

(A-10) (1) the power of the process and DC + RF power, (2) the power of the process and the RF power source (A - 1) a transparent conductive film manufacturing method of a multilayer substrate according to. '(A- 11) (1) a sputtering process conducted in an inert gas atmosphere permeable transparent conductive film manufacturing method of a multilayer substrate according to (A- 10).

(A-12) (1) intends row in a mixed gas atmosphere sputtering inert gas and oxygen process (A- 10> transparent conductive film manufacturing method of a multilayer substrate according to.

(A-13) (1) the oxygen content of approximately 0 in the mixed gas of inert gas and oxygen process. The method according to 6 volume% or less is the (A- 12).

. (A - 14) (1) the oxygen content of approximately 0 in the mixed gas of inert gas and oxygen of step 4 volume% or less is the (A- 13) The method according to.

(A-15) (1) the oxygen content of approximately 0 in the mixed gas of inert gas and oxygen process. The method according to 2 volume% or less is the (A- 14).

(A - 16) (1) the power of the process and a DC power supply, (2) the power of the process and DC + RF Power (A-1) a transparent conductive film manufacturing method of a multilayer substrate according to.

(A-17) (1) intends row in a mixed gas atmosphere sputtering inert gas and oxygen process (A- 16) transparent conductive film manufacturing method of a multilayer substrate according to.

(A-18) (1) The method according to the oxygen content in the mixed gas of inert gas and oxygen steps is about 1 volume% or less (A- 17).

(A-19) (1) the oxygen content in the mixed gas of inert gas and oxygen process about 0. The method according to 6 volume% or less is the (A- 18). Method B:

Method] B is,

(1) Indium - the evening one target of tin oxide sintered body, 0_Rei power or 0_Rei + with scale power, and sputter-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, forming a I tO film of the first layer on the substrate,

(2) a step of the target, using a DC power supply, RF power or DC + RF power to form a I TO film of the second layer on the first layer by sputtering in an inert gas atmosphere and,

(3) the target, using a DC power supply or DC + RF power, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, forming the I TO film of the third layer on the second layer step of

It contains.

Substrate and target used in this method is similar to A.

In the method B, submitted firstly, indium - use les tin oxide sintered body as a target, which was sputtered onto the substrate, on the substrate Ru to form I TO film of the first layer (hereinafter this step " referred to as a first step ").

Sputtering conditions of the first step is as follows.

Power supply or a DC power source, or a DC + RF power. Power is preferably a DC power supply.

Conditions such as the applied power is evening Do it may vary depends, such as single target size bur, assuming the target is a size 5 inches X 15 inches, are as follows.

Applied power, if the DC power source, usually about 0, 1 to about 1 KW, preferably from about 0.3 to about 0. 6KW. For DC + RF Den猄, power of the DC power source is usually from about 0.1 to about 1 KW, preferably from about 0.5 2 to about 0.5 6_KW, power of the RF power source, usually from about 0.1 to about 3KW , preferably from about 0.5 2 to about 0.5 6KW. DCZRF power ratio is better to appropriately adjusted within the range of from about 0.5 to about 10. When using a RF power, frequency is usually about 6. 78 to about 27. 12 MH z, preferably about 13. 56 MHz.

Temperature of the substrate varies depending on the type of substrate, when a glass substrate is used for example, usually about room temperature ~ 300 ° less than C, preferably about 140 to about 250 ° C.

Sputtering gas, a mixed gas of an inert gas or an inert gas and oxygen. The inert gas can be used widely known inert gases include argon gas or the like as its representative.

Gas pressure is typically from about 0.1 to about 1 P a, Ru preferably from about 0.5 2 to about 0.5 8 Pa der.

When a mixed gas of inert gas and oxygen in the first step, in the case of DC power source, the oxygen content of the mixed gas is about 1% by volume or less, preferably not more than about 0.6% by volume, DC + for RF power, the oxygen content of the mixed gas is about 0.6 volume% or less, preferably about 0.4% by volume or less, and more preferably no more than about 0.2% by volume. . The first step, the thickness of the I TO film formed as the first layer on the substrate is generally about 5 to about 100 nm, it is preferably from about 10 to about 70 nm, particularly preferably from about 15 to about 50nm .

In the method B, submitted then indium - have use tin oxide sintered body as a target, which was sputtered to a first layer formed on a substrate, I TO film of the second layer on the first layer to form (hereinafter, this step of "second step").

Sputtering conditions of the second step are as follows.

Type of power supply, or a DC power supply, you whether or DC + RF power to RF power.

Applied power, if the DC power source, usually about 0.1 to about 1 KW, preferably from about 0.3 to about 0.5 6KW. Power of the RF power source is usually from about 0.1 to about 3KW, preferably about 1 to about 1. 8KW. For DC + RF power, power of the DC power source is usually from about 0.1 to about 1 KW, preferably from about 0.5 2 to about 0.5 6KW, power of the RF power source is usually from about 0.1 to about 3KW, preferably is about 0. 2 to about 0. 6KW. DC / RF power ratio is better to appropriately adjusted within the range of from about 0.5 to about 10. If Ru using an RF power source frequency is usually about 6. 78 to about 27. 12 MH z, preferably about

13. is 56MHz.

The temperature of the substrate on which the first layer is formed, usually about room temperature - less than 300 X, and preferably from about 140 to about 250 ° C.

Sputtering gas is an inert gas. The inert gas can be used widely known inert gas, such as argon gas can be cited as a representative.

Gas pressure is typically from about 0.1 to about 1 P a, Ru preferably from about 0.5 2 to about 0.5 8P a der.

The second step, the thickness of the I TO film formed as a second layer on the first layer is generally about 5 to about 0.99 nm, preferably from about 10 to about 100 nm, particularly preferably from about 20 to about 70 it is nm.

In the method B, submitted then indium - have use tin oxide sintered body as a target, which the second layer was made form on a substrate in a mixed gas atmosphere of an inert gas or an inert gas and oxygen by sputtering, on the second layer Ru to form a IT_〇 film of the third layer (below the process' it referred to as a "third step").

Sputtering conditions of the third step can be the same as the sputtering conditions of the first step.

That is, the sputtering conditions of the third step is as follows.

Type of power supply, or a DC power source, or a DC + RF power.

Applied power, if the DC power source, usually about 0.1 to about 1 KW, preferably from about 0.3 to about 0.5 6KW. For DC + RF power, power of the DC power source is usually from about 0.1 to about 1 KW, preferably from about 0.5 2 to about 0.5 6KW, power of the RF power source, usually from about 0.1 to about 3KW, preferably from about 0.1 2 to about 0.5 6KW. DCZRF power ratio, it is preferable to appropriately adjusted within the range of from about 0.5 to about 10. If Ru using an RF power source frequency is usually about 6. 78 to about 27. 12 MHz, preferably about

13. is 56MHz.

The temperature of the substrate is generally about room temperature ~ 300 ° less than C, preferably about 140 to about 250.

Sputtering gas is a mixture of inert gas and oxygen. Is an inert gas, can be used widely known inert gas, and the like argon gas scan as its representative.

Gas pressure is typically from about 0.1 to about 1 P a, Ru preferably from about 0.5 2 to about 0.5 8 Pa der.

In a third step, in the case of DC power supply, an inert gas and oxygen content in the mixed gas of oxygen of about 1% by volume or less, preferably about 0.6% by volume or less, in the case of DC + RF Power the oxygen content of the mixed gas is about 0. 6 vol% or less, preferably about 0. 4 vol% or less.

The third step, the film thickness of the ITO film formed as a third layer on the second layer, usually from about 5 to about 1 0 0 nm, preferably from about 1 0 to about 7 0 nm, particularly preferably from about 1 5 to about 5 0 nm.

In the present invention, the sputtering of the first step and the third step to exactly may be carried out under the same conditions, may be carried out sputtering as the first step and the third E appropriately modified within the scope of the sputtering conditions .

In the present invention, (1) step, (2) process and (3) it is preferable both power steps to a DC power source. In this case, (1) process and (3) process was carried out under the atmosphere of a mixed gas of inert gas and oxygen, (2) a step of may be carried out in an atmosphere of inert gas. Furthermore, (1) process and (3) the oxygen content of about 1% by volume in the mixed gas of inert gas and oxygen process or less, preferably from about 0. 2 to about 0. 6 good to the volume% .

In the present invention, (1) process and (3) both the power of the process and a DC power supply, (2) the power of the process preferably set to RF power. In this case, (1) process and (3) process was carried out in an atmosphere of a mixed gas of inert gas and oxygen, (2) a step of may be carried out in an atmosphere of inert gas. Furthermore, (1) process and (3) the oxygen content of about 1% by volume in the mixed gas of inert gas and oxygen process or less, preferably from about 0. To about 0. 6 good to the volume% .

In the present invention, (1) both the supply process 及 Pi (3> step was DC + RF power preferably set to RF power source supply (2) step. In this case, (1> process and (3) step was carried out in an atmosphere of a mixed gas of not 'inert gas or an inert gas and oxygen, (2) may be carried out under an atmosphere of inert gas the process. in addition, (1) process and ( 3) oxygen content of about 0 in the mixed gas of inert gas and oxygen processes. it's better than 2% by volume or less.

In the present invention, (1) process and (3) both the power of the process and a DC power supply, (2) the power of the process it is preferable to DC + RF power. In this case, (D process and (3) process was carried out in an atmosphere of a mixed gas of inert gas and oxygen, (2) a step of may be carried out under Kiri囲 gas of an inert gas. Further, (1) step and (3) mixed gas of inert gas and oxygen process] 5

About the oxygen content in the scan is approximately from 0.1 to 0.6 may be between volume%.

In the present invention, after completion of the third step, by sputtering the same sputtering conditions and the second step may be formed a fourth layer made of an ITO film to a 3 layer. A transparent conductive film laminated substrate IT_〇 film are laminated in four layers of this it is particularly preferred in view of high conductivity and transparency.

Further on the fourth layer of the transparent conductive film laminated substrate ITO film are laminated in four layers, by sputtering the same sputtering conditions as the first E as or third step, forming a fifth layer made of an ITO film it may be.

In the present invention, the second step and the same sputtering conditions and the like spa Ttaringu conditions a first step alternately repeated, may be further formed one or more of the ITO film on the fifth layer.

In the method B, submitted again 3 times while maintaining the substrate temperature at about 1 4 0 to about 2 5 (TC performs more sputtering, an ITO film composed of three layers or more layers on a substrate can be. in this case, since the substrate temperature is sufficiently low, be returned immediately atmospheric pressure atmosphere around the substrate, there is no fear. cooling the substrate is degraded, completed in a short time in minutes can do.

The method B, submitted includes the following aspects.

(B-1)

(1) the target of indium tin oxide sintered body, using a DC power supply or DC + RF source, and sputtering-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, the on board forming an ITO film having a first layer,

(2) a step of the target, using a DC power supply, RF power or DC + RF power to form a IT_〇 film of the second layer on the first layer by sputtering evening ring in an inert gas atmosphere and,

(3) the target, using a DC power supply or DC + RF power, by sputtering in a mixed gas atmosphere of an inert gas or an active 14 gas and oxygen, an ITO film of the third layer on the second layer the step of,

The method for producing a transparent conductive film laminated substrate comprises a.

(B-2) (1) step, (2) process and (3) method according to the power of the process in the (B- 1) to either a DC power source.

(B-3) (1) is performed step and (3) a step to an atmosphere of a mixed gas of inert gas and oxygen, according to (2) above to perform the process in an atmosphere of inert gas (B- 2) the method of.

(B-4) (1) process and (3) the oxygen content in the mixed gas of inert gas and oxygen steps is less than about 1 volume% above (B- 3) The method according to.

(B-5) (1) process and (3) both the power of the process and DC power supply, the method described in the above (B-1) to RF power source supply (2) step.

(B-6) (1) process and (3) process was carried out in an atmosphere of a mixed gas of inert gas and oxygen, according to (2) above to perform the process in an atmosphere of an inert gas (B-5) the method of.

(B-7) (1) process and (3) the oxygen content in the mixed gas of inert gas and oxygen steps is about 1% by volume or less above (B- 6) A method according to.

(B - 8) (1) step, (2) process and (3) The method according to (B-5) performing steps in an atmosphere of inert gas.

(B-9) (1) process and (3) both the power of the process and DC + RF power, the method described in (2) above power steps to a RF power supply (B-1).

(B-10) (1) is performed step and (3) a step to an atmosphere of a mixed gas of inert gas and oxygen, according to (2) above (B- 9) performing step in an atmosphere of an inert gas the method of.

. (B - 11) (1) process and (3) the oxygen content of about 0 in the mixed gas of inert gas and oxygen-step method described in 2 volume% or less is the (B-10).

(Beta-12) (1) process and (3) both the power of the process and DC power supply, the method described in (2) above the supply step and DC + RF Power (B- 1).

(B - 13) (1) is performed step and (3) a step to an atmosphere of a mixed gas of inert gas and oxygen, according to (2) above (B- 12) performing step in an atmosphere of an inert gas the method of.

(B-14) (1) process and (3) the oxygen content in the mixed gas of inert gas and oxygen steps is less than about 1 volume% above (B- 13) The method according to. Method C

Method C,

(1) Indium - the target of tin oxide sintered body, 0 Ji power or 13 Ji +? Using the power supply, and sputter-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, forming a IT_〇 film of the first layer on the substrate and,

(2) the target of indium oxide sintered body, DC power supply, RF power or DC + using an RF power source, sputtering evening the first layer and the ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen forming an oxide Injiumu film of the second layer to the

have.

This method, the target used in the (1) step, indium tin oxide sintered body, characterized in that (2) evening one target to be used in the process is indium oxide sintered body. Unless the target is different, other conditions may be the same as method A. In the present invention, (1) the power of the process and DC power, it is preferable to RF power source supply (2) step. In this case, (1) process was carried out in an atmosphere of a mixed gas of inert gas and oxygen, (2) a step of may be carried out in an atmosphere of inert gas. Furthermore, (1) the oxygen content of the inert gas and mixed gas of oxygen step about 1% by volume or less, preferably about 0.6 may not more than volume%.

(1) by the process, the film thickness of the ITO film formed as the first layer on the substrate is generally about 5 to about 1 0 0 nm, preferably from about 1 0 to about 7 0 nm, particularly preferably from about 1 5 it is to about 5 0 nm.

(2) by the process, the thickness of the indium oxide film formed as a second layer on the first layer 'is generally about 5 to about 1 5 0 nm, preferably from about 1 0 to about 1 0 O nm, especially preferably from about 2 0 to about 7 0 nm.

In the method C, subjected to 2 times of sputtering while maintaining the substrate temperature at about 1 4 0 to about 2 5, it is the this to form the I Tau_〇 film and an indium oxide film on the substrate. In this case, since the substrate temperature is sufficiently low, be returned immediately atmospheric pressure atmosphere around the substrate, there is no fear of deterioration substrate. Cooling can be completed between the time short in minutes.

The method C, comprises the following aspects.

(C-1)

(1) the data one target of indium tin oxide sintered body, using a 0 Ji power or 13_Rei + 1 1 ^ power, sputter-ring was in a mixed gas atmosphere of an inert gas or an inert gas and oxygen Te, the step of forming the ITO film of the first layer on the substrate and,

(2) the target of indium oxide sintered body, DC power supply, RF power or DC + using an RF power source, sputtering evening the first layer and the ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen forming an oxide Injiumu film of the second layer to '

The method for producing a transparent conductive film laminated substrate comprises a.

(C-2) (1) the power of the process and DC power supply, the method described in the above (C-1) to RF power source supply (2> process..

(C-3) (1) process and (2) the method described above SL (C-2) performing step to an atmosphere of a mixed gas of inert gas and oxygen.

(C-4) (1) the oxygen content in the mixed gas of inert gas and oxygen of about 1 volume% or less of the process, the oxygen content in the mixed gas of inert gas and oxygen ( «step 0 . a method according to 6 volume% or less and is the (C-3).

(C-5) (1) Step was carried out in an atmosphere of a mixed gas of inert gas and oxygen, the method described in (2) above to perform the process under an inert gas atmosphere (C 2).

(C-6) (1) 'The method according to the oxygen content in the mixed gas of inert gas and oxygen steps is about 1 volume% or less (C-5). In addition to the above-mentioned methods, the transparent conductive film laminated substrate of the present invention can be prepared by Method D shown below.

METHOD D:

Method D,

(1) Indium - the target of tin oxide sintered body, using a DC power supply or DC + RF source, and sputtering-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, the on board forming a first layer of. IT_〇 film,

(2) the target, using a DC power supply, RF power or DC + RF source, an ITO film of the second layer on the first layer by sputtering in a mixed gas atmosphere of an inert gas and oxygen process, as well as

(3) the above target, 0 0 power or 0_Rei + 11 I use the power, and sputtering evening ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, the third layer on the second layer forming a I tO film

It contains.

Substrate and target used in this method is similar to A.

(2) except for performing the sputtering process in a mixed gas atmosphere of an inert gas and oxygen, other conditions are the same as the method B.

(1) step, (2) process and (3) when performing step in an atmosphere of a mixed gas of inert gas and oxygen, (2) the oxygen content in the mixed gas of inert gas and oxygen process, (1> the low good mixed gas Me oxygen content and than the same level or in the process. Specifically, (1) process and (3) oxygen inert gas and mixed gas of oxygen step about 1% by volume content of less, preferably of about 0.5 2 to about 0.6 volume%, (2) from about 0.3% by volume of oxygen content in the mixed gas of inert gas and oxygen process following , and it is preferably from about 0.2% by volume or less.

(1) by the process, the thickness of the I TO film formed as the first layer on the substrate is generally about 5 to about 100 nm, preferably about 10 to about 70 nm, particularly preferably from about 15 to about 50 nm is there. .

(2) by the process, the thickness of the I TO film formed as a second layer on the first layer is generally about 5 to about 0.99 nm, preferably from about: I 0 to about 100 nm, particularly preferably about 20 it is to about 70 nm.

(3) by the process, the thickness of IT_〇 film formed as a third layer on the second layer, 逋常 about 5 to about 100 nm, preferably from about 10 to about 70 nm, particularly preferably about 15 to it is about 50 nm.

In the present invention, (3) after the end of the process, (2) to scan pack evening ring similar sputtering conditions and steps, may form a fourth layer consisting of I TO film to a 3 layer, further on the fourth layer, (]) or (3) by sputtering on the same sputtering conditions and steps, may be formed a fifth layer of I tO film.

In the present invention, (2) process the same sputtering conditions and with the (1) step and the same sputtering Taringu conditions repeated alternately be formed further one or more I TO film over the fifth layer good.

In the method D, or 3 times while maintaining the substrate temperature at about 140 to about 250 ° C is carried out more sputtering, to form gamma. TO film comprising three layers or more layers on a substrate be able to. In this case, since the substrate temperature is sufficiently low, be returned immediately atmospheric pressure atmosphere around the substrate, there is no fear of deterioration substrate. Cooling can be completed in a short time in minutes.

Methods D, includes the following aspects.

(D-1)

(1) Indium -? Target of tin oxide sintered body, using a 0 power or 0 0 + 1 power supply, and sputtered-ring with an inert gas Further, an inert gas and oxygen mixed gas atmosphere of, the substrate forming a IT_〇 film of the first 'layer thereon,

(2) the target, using a DC power supply, an RF power supply or DC + RF power to form a IT 〇 film of the second layer on the first layer by sputtering in a mixed gas atmosphere of an inert gas and oxygen process , as well as

And (3) the target, 0_Rei power or 0_Rei + power use the I, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, the ITO film of the third layer on the second layer the step of forming,

The method for producing a transparent conductive film laminated substrate comprises a.

(D-2) (1) step, (2) process and (3> The method described above for any power step a DC power source (D-1).

(D-3) (1) step, (2) process and (3) The method according to (D-2) carrying out the step in an atmosphere of a mixed gas of inert gas and oxygen. '

(D-4) (1) process and (3) the oxygen content of the inert gas and mixed gas of oxygen process about. 1% by volume or less, (2) an inert gas and mixed gas of oxygen step the method according to the oxygen content of is about 0.3 vol% or less (D-3).

(D-5) (1) process and (3) the oxygen content of the inert gas and mixed gas of oxygen step about 0. 2 to about 0. 6 vol%, (2) an inert gas process and the method according to the oxygen-containing organic content in the mixed gas of oxygen of about 0.2% by volume or less is the (D-4).

(D-6) (1) process and (3) both the power of the process and a DC power supply, (2) the method described power steps in the (D-1) to the RF power supply.

(D-7) (i) step and (3) process was carried out under an inert gas atmosphere, according to (2) step of the above carried out under an atmosphere of a mixed gas of inert gas and oxygen (D-6) Method.

(D-8) (2) The method according to the oxygen content in the mixed gas of inert gas and oxygen steps is about 1 volume% or less (D-7).

. (D - 9) (2) oxygen content of about 0 in the mixed gas an inert gas and oxygen in the process method according to 3 volume% or less is the (D-8). Sputtering in the method A~ method D includes a known sputtering, For example, magnetron sputtering, reactive sputtering, the ECR sputtering-ring or the like. Production of color filters

Color filters evening one aspect of the present invention is the light-shielding film on a transparent substrate, in which color resist film and the ITO conductive film is formed. The overcoat layer may be formed between the color resist film and the ITO conductive film.

Transparent substrate is not limited, the transparency substrate commonly used in the field of this type can be widely used. Specific examples of the transparent substrate, for example, an alkali glass, a glass plate such as alkali-free glass, poly force one Bonnet Ichito, such as polymethacrylic rate which resin plate and the like. Among these, alkali-free glass is good suitable. The size of the transparent substrate, such as thickness, can be appropriately selected depending on the color fill evening one use.

Material forming the light-shielding film, the light-shielding film formed materials commonly used can widely use in this field. The light-shielding film forming material may include, for example, metal, metal oxides, such as the distributed is a resin obtained pigment. The metal, specifically, chromium, molybdenum, tantalum, and aluminum. As an oxide of a metal, specifically, chromium oxide, and aluminum oxide. The resin in which a pigment is dispersed, in particular carbon-dispersed resins, such as black pigment dispersion resin like et be. Of these, light-shielding, from the viewpoint of film forming property, a metal, chromium oxide, chromium, forces one carbon-dispersed resin, such as a black pigment dispersion resin is preferable.

Material forming the color resist film, a color Ichire resist film forming materials commonly used in this field can be widely used. The color resist film forming materials, acrylic resins For example, polyester resins, polyvinyl alcohol resins, red in a mixture of polyimide resins or their resins, and the like of the green-based or blue-based coloring agents are dispersed . .

The resin constituting the O one barcode one coat layer can wide rather a resin generally used in the art, for example, epoxy resin, acrylic resin, polyimide resin Ru mentioned.

Shielding film on a transparent substrate, it is hit in order to form a color resist film and the overcoat film, a known light-shielding film forming method can be widely used color resist film forming method and over one co over preparative film forming method .

The color filter aspect of the present invention, the light-shielding film and color one resist film, the more as needed over one coating film formed on a transparent substrate, ITO conductive film made of at least two layers are formed.

Color one filter aspect of the present invention, for example, a known method by the light-shielding Maku及 beauty color resist film on a transparent substrate, after further forming a Obako one preparative layer optionally any of the above methods A~ Method E more thereby forming a conductive film according to the conductive film forming method, it is produced.

Effect of the invention

According to the transparent conductive film manufacturing method of a multilayer substrate of the present invention, it is possible to increase the carrier (free electron) density in the conductive film, yet can maintain or increase or Kiyaria mobility hardly reduces the carrier mobility since, it is possible to obtain a transparent conductive film laminated substrate having a high conductivity.

Since the conductive film formed on the substrate has a high conductivity, 必 short without increasing the thickness, it is possible to secure excellent transparency.

Therefore, according to the method of the present invention, with a high conductivity, that is, the specific resistance value to produce a small transparent conductive film laminated substrate. According to the method of the present invention, it is possible to produce a transparent conductive film laminated substrate having excellent transparency.

In the method of the present invention, it is necessary to maintain the substrate temperature at 3 0 0 ° C or higher temperature rather than, in some cases even at a relatively low temperature of 1 4 0~ 2 5 0 ° C, good on the substrate conductive film can be formed. Therefore, not limited by the type of substrate used. The method of the present invention, 3 0 0 ° 2 from a temperature higher than C 5 O t under vacuum: no need to cool below are practical.

In the method of the present invention, only by changing the power type and sputtering evening ring gas during sputtering evening ring, it can be formed of the desired ITO film on a substrate, which is industrially Yes advantage.

In the method of the present invention, there is no need to perform special processing of Aniru process, is very practical.

According to the method of the present invention, it is possible to produce a color one filter having a high conductivity with a, i.e. specific resistance value is smaller ITO conductive film.

According to the method of the present invention, as possible out to produce superior strength color filter foremost transparency.

BEST MODE FOR CARRYING OUT THE INVENTION

By reference to Examples and Comparative Examples below, further clarify the present invention.

Following an example of producing a transparent conductive film laminated substrate.

Summary of operations in the following examples and comparative examples are as follows.

Glass substrate (2 0 Ommx 2 6 O mm, thickness 0. 7 mm) was placed in a preheated zone Ichin and preheated to a predetermined temperature for 60 minutes under high vacuum.

When the substrate to a predetermined temperature is pre-heated, after which the argon gas and oxygen gas is introduced such that the predetermined ratio was adjusted so that the total pressure (sputtering evening pressure) becomes 0. 7 P a, evening It applied using a predetermined power Getto, discharge start cheat.

After evening glow one discharge on one target, it was confirmed that they were stable, the pre-heated substrate moving speed 1. O m / min speed to move through the discharge, a first layer of a predetermined thickness on the substrate to form a transparent conductive film. Until a predetermined thickness, it is reciprocated over the target.

Then, by introducing a gas such as argon gas and oxygen reaches a predetermined ratio, after the total pressure was adjusted to a predetermined pressure, is applied using a predetermined power to the target, to initiate a discharge collector .

After glow one discharge on the target, it was confirmed that stable, the preheated substrate moving speed 1. O mZ min speed during discharge is moved in the transparent conductive film of the second layer having a predetermined thickness on the substrate to form. Until a predetermined thickness, it is reciprocated over the target.

Further, in the case of forming a transparent conductive film of the transparent conductive film and the fifth layer of the third layer on the transparent conductive film of the second layer, repeat the procedure similar to form a transparent conductive film of the first layer return. In the case of forming a transparent conductive film of the fourth layer on the transparent conductive film of the third layer, repeat the procedure similar to form a transparent conductive film of the second layer.

Further, the glass substrate after film formation move to the vacuum chamber, was allowed to cool for 3 minutes, to replace the vacuum chamber with nitrogen gas, it was taken out glass substrate having a transparent conductive film is formed.

Example 1

Argon gas and oxygen gas mixture (oxygen content 0.542% by volume, sputtering evening pressure 0. 7P a) under an atmosphere of indium - tin oxide sintered body (oxide content of tin 10% by weight, hereinafter the same) target, and Supattari ring using a DC power supply (power 0. 5KW), was on a glass substrate which is maintained at 200 to form a first layer of I tO film (thickness 438. 8 a).

Then, under an atmosphere of argon gas (sputtering pressure 0. 7 P a), indium - stannate compound sintered body target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z), on the first layer by forming a second layer consisting of I tO film (thickness 4 38. 8A), to obtain a transparent conductive film laminated substrate of the present invention.

Comparative Example 1

Under an atmosphere of argon gas (sputtering evening pressure 0. 7 P a), indium tin oxide sintered body target, RF power and sputtering have use the (power 1. 5KW, frequency 13. 56 MHz), 200 on a glass substrate which is maintained to form a first layer that Do from I tO film (thickness 553. 9A).

Then, a mixed gas (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) of argon gas and oxygen atmosphere, indium - tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), on the first layer by forming I tO film or Ranaru second layer (film thickness 553. 9 a), to obtain a conductive film laminated substrate. Per conductive film laminated substrate obtained in the transparent conductive film laminated substrate and Comparative Example 1 of the present invention obtained in Example 1 to obtain sheet resistance.

Sheet one sheet resistance value was determined as follows. That, 200MmX 260 mm, the film surface formed on a glass substrate having a thickness of 0. 7 mm, equally provided with measurement points 67 points, resistance using a four-probe resistivity meter manufactured by Mitsubishi Chemical Corporation (MCP T600) calculated values, these average values ​​determined to obtain the sheet one sheet resistance value further multiplied by a constant = 4.5424.

The film thickness was measured in the following manner. That, manufactured by Kosaka Laboratory Ltd. two-dimensional fine shape measuring device (ET4000), were measured the film thickness of the formed conductive film on a glass substrate. Measurement sets the measurement points 5 points on a glass substrate, masked with a helmet down tape, peel off the mask after the deposition, the film thickness was measured, and the average was taken as the thickness of the film.

Specific resistance (Ω · cm) was determined by multiplying the film thickness in the sheet resistance value obtained by the four-probe method.

Also, every conductive film laminated substrate obtained in the transparent conductive film laminated substrate and Comparative Example 1 of the present invention obtained in Example 1 to obtain transmittance (%). That is, using Hitachi spectrophotometer (U- 2010), measuring the transmittance) of the conductive film laminated board in the wavelength range of 200 to 900 nm, transmittance of the glass substrate before film formation (blank) rate a (%) 100%, was calculated transmittance at 620 nm, 540 nm and 460 nm (percent).

The results are shown in Table 1.

Table 1

Example 2

Mixed gas of argon gas and oxygen (oxygen content 0.54% by volume, sputtering pressure 0. 7 Pa) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, it was on a glass substrate which is maintained 200 ° C (392 ° F) to form a first layer of I tO film (thickness 433 a).

Then, under an atmosphere of argon gas (sputtering evening pressure 0. 7P a), indium tin oxides sintered evening one target, by sputtering using a DC power supply (power 0. 5KW), the first layer a was formed a second layer consisting of I tO film (thickness 433 a).

Next, a gas mixture of argon gas and oxygen (oxygen content 0.54% by volume, sputtering evening pressure 0. 7 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power 0 . by sputtering using a 5KW), on the second layer by forming a third layer consisting of I tO film (thickness 433 a), to obtain a transparent conductive film laminated substrate of the present invention. Comparative Example 2

Glass under an atmosphere of argon gas (sputtering evening pressure 0. 7 P a), indium tin oxide sintered compact target, and sputtering using a DC power supply (power 0. 5KW), maintained 200 ° C (392 ° F) single layer made of IT_〇 film on a substrate (thickness 1686. 6 Α) by forming, to obtain a conductive film laminated substrate.

Comparative Example 3

Mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 P a) an atmosphere of an indium tin oxide sintered body target, DC power supply (power 0. 5 KW ) by sputtering using a on a glass substrate maintained at 200 ° C (392 ° F) to form a single layer consisting of I tO film (thickness 1504. 3 a), was obtained Shirubedenmakuseki layer substrate.

Per transparent conductive film laminated board, and Comparative Example 2 and obtained et conductive film laminated substrate 3 of the present invention obtained in Example 2, in the same manner as described above, sheet resistance (Omega / mouth), the ratio resistance was determined value (ύ · cm) and 620 nm, transmittance at 540 nm and 460 nm (%).

The results are shown in Table 2.

Sheet resistance resistivity transmittance of the conductive film (%) total film thickness (Alpha) (Omega / mouth) (Ώ · cm) 620nm 540nm 460nm EXAMPLE 2 1299.1 13.37 1.74X10 -4 95.16 97.91 91.21 Comparative Example 2 1686.6 15.30 2.58 X10- 4 90.16 90.96 83.85 Comparative example 3 1504.3 15.64 2.35X10 one 4 96.55 98.01 88.20 example 3

Mixed gas (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 Pa) of argon gas and oxygen atmosphere, the indium tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, to form a first layer of ITO film (with a thickness of 446. 5 a) to the glass substrate is maintained at 200. 'Next, under an atmosphere of argon gas (sputtering evening pressure 0. 7P a), indium - stannate compound sintered body target, and sputtering using an RF power supply (power 1. 5KW, frequency 13 .. 56MH z) Te was formed a second layer consisting of I tO film (thickness 4 46. 5 a) on the first layer.

Then, a mixed gas (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) of argon gas and oxygen atmosphere, indium - tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), on the second layer by forming I tO film or Ranaru third layer (thickness 446. 5A), to obtain a transparent conductive film laminated substrate of the present invention.

Example 4

Mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 P a) an atmosphere of indium - tin oxide sintered body target, DC power supply (power 0 .. 5KW ) by sputtering was used to form a first layer of IT_〇 film on a glass substrate which is maintained at 200 (thickness 177. 8 Alpha).

Then, under an atmosphere of argon gas (sputtering pressure 0. 7 Pa), indium tin oxides sintered body target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z), the second layer of IT_〇 film on the first layer was formed (thickness 1 77. 8 Alpha).

Next, a gas mixture of argon gas and oxygen (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), to form a IT_〇 film or Ranaru third layer on the second layer (film thickness 177. 8 a).

Then, under an atmosphere of argon gas (sputtering evening pressure 0. 7 P a), indium tin oxides sintered body target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z) It was formed a fourth layer consisting of I tO film (thickness 1 77. 8 a) to the third layer on.

Then, a mixed gas (oxygen content 0.542% by volume, spa Tsu evening pressure 0. '7 Pa) of argon gas and oxygen atmosphere, indium - tin oxide sintered body target, DC power supply (power 0 . by sputtering using a 5KW), on the fourth layer to form a I tO film or Ranaru fifth layer (thickness 177. 8A), to obtain a transparent conductive film laminated substrate of the present invention.

Example 5

Mixed gas (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 Pa) of argon gas and oxygen atmosphere, indium - tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, it was formed on a glass substrate which is maintained 200 ° C (392 ° F) a first layer consisting of I tO film (thickness 182. 1 a).

Then, under an atmosphere of argon gas (sputtering pressure 0. 7 P a), indium - stannate compound sintered body target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z), It was formed a second layer consisting of I tO film (thickness 4 55. 3 a) on the first layer.

Next, a gas mixture of argon gas and oxygen (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), on the second layer by forming I tO film or Ranaru third layer (thickness 182. 1 a), to obtain a transparent conductive film laminated substrate of the present invention.

Example 6

Mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 Pa) under an atmosphere of indium - tin oxide sintered body target, using a DC power supply (power 5KW) by sputtering, to form a first layer of I tO film (thickness 208 a) on a glass substrate maintained at 299 ° C.

Then, under an atmosphere of argon gas (sputtering pressure 0. 7 P a), indium tin oxides sintered evening one target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z) Te was formed a second layer consisting of I tO film (thickness 5 19. 9 a) on the first layer.

Next, a gas mixture of argon gas and oxygen (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5 KW), on the second layer to form an I tO film or Ranaru third layer (film thickness 208 a), to obtain a transparent conductive film laminated substrate of the present invention.

Per transparent conductive film laminated board of the present invention obtained in Example 3-6, in the same manner as described above, the sheet resistance value (Omega slag), resistivity (Omega · cm) and 620 nm, 540 nm and 460 nm transmittance (%) was determined in the.

The results are shown in Table 3.

Table 3

Example 7

The sputtering for forming the second layer on the first layer, mixed-gas (oxygen content 0.18% by volume, sputtering evening pressure 0. 7 P a) of argon gas and oxygen, except for performing under an atmosphere of, in the same manner as in example 3, to obtain a transparent conductive film laminated substrate of the present invention. First layer formed on the substrate, the thickness of the second layer and the third layer are all 488. 1 A der ivy.

Example 8

The sputtering evening ring to form a second layer on the first layer, mixed-gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering pressure 0. 7 P a) except for the line power sale under an atmosphere of , the same procedure as in example 3, to obtain a transparent conductive film laminated substrate of the present invention. First layer formed on the base plate, the thickness of the second layer and the third layer, the mediation by both 432. 1A.

Per transparent conductive film laminated board of the present invention obtained in Example 7 and 8, in the same manner as described above, sheet resistance (Omega / mouth), resistivity (Omega · cm) and 620 nm, 54 0 nm and it was calculated transmittance at 460 nm (%) of.

The results are shown in Table 4.

Table 4

Example 9

Under an atmosphere of argon gas (sputtering pressure 0. 7 Pa), indium - tin oxide sintered body target, DC + RF Power (DC: power 0. 4KW, RF: power 0. 4 KW, frequency 13. 56 MHz ) by sputtering was used on a glass substrate which is maintained at 200 to form a first layer of I tO film (thickness 451. 9A).

Then, under an atmosphere of argon gas (sputtering evening pressure 0. 7P a), indium tin oxides sintered body target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. '56MH z) It was formed a second layer consisting of I tO film (thickness 4 51. 9 a) on the first layer.

Then, under an atmosphere of argon gas (sputtering pressure 0. 7 P a), indium tin oxides sintered body target, DC + RF Power (DC: power 0. 4KW, RF: power 0. 4KW, frequency 13 . by sputtering using a 56 MHz), on the second layer to form a third layer consisting of I tO film (thickness 451. 9 a), a transparent electrically example 10 of the present invention

The sputtering in which made form the third layer in the sputtering and the second layer on to form a first layer on a glass substrate, a gas mixture of argon gas and oxygen (oxygen content 0.18% by volume, sputtering pressure 0. 7 Pa ) except for performing under an atmosphere of, in the same manner as in example 9, to obtain a transparent conductive film laminated substrate of the present invention. First layer formed on the substrate, the thickness of the second layer and the third layer were both 470. 6A.

Per transparent conductive film laminated board of the present invention obtained in Example 9 and 10, in the same manner as described above, the sheet resistance value (Ω Ό), resistivity (Ω · cm) and 620 nm, 5 40 nm and 460 transmittance at nm (%) was determined.

The results are shown in Table 5.

Table 5

Example 1 1

Mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 P a) an atmosphere of an indium tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering was used to form a first layer consisting IT_〇 film the glass substrate is maintained 200 ° C (392 ° F) (thickness: 467. 5 Alpha).

Next, a gas mixture of argon gas and oxygen (oxygen content 0.542% by volume, spa Tsu evening pressure 0. 7 Pa) under an atmosphere of an indium oxide sintered body evening one target, RF power (power 1. 5KW, by sputtering using a frequency 13, 56 MHz), to form a second layer of indium oxide film on the first layer (film thickness 467. 5 a). Next, a gas mixture of argon gas and oxygen (oxygen content 0.542% by volume, spa Tsu evening pressure 0. 7 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), a third layer IT_〇 film or Ranaru on the second layer (to form a film thickness of 46 7. 5A), to obtain a transparent conductive film laminated substrate of the present invention.

Example 1 2

Under an atmosphere of argon gas (sputtering evening pressure 0. 7 P a), indium - glass tin oxide sintered compact target, and sputtering using a DC power supply (power 0. 5KW), maintained at 2 00 first layer of IT_〇 film on a substrate to form a (film thickness 47 0. 8 Α).

Next, a gas mixture of argon gas and oxygen (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) under an atmosphere of an indium oxide sintered body target, DC power (power 0 . by sputtering using a 5KW), to form a second layer of indium oxide 'film on the first layer (film thickness 470. 8A).

Then, under an atmosphere of argon gas (sputtering evening pressure 0. 7 P a), indium - stannate compound sintered body target, and sputtering using a DC power supply (power 0. 5KW), on the second layer : to form a [T_〇 third layer of film (thickness 47 0. 8 Α), to obtain a transparent conductive film laminated substrate of the present invention. '

Per transparent conductive film laminated board of the present invention obtained in Examples 1 1 and 1 2, in the above the same way, the sheet resistance value (Omegazeta port), a specific resistance value (Omega · cm) and 62 0 nm, 540 transmittance at nm and 460 nm (%) was determined.

The results are shown in Table 6.

Table 6

Example 1 3

Mixed gas of argon gas and oxygen (oxygen content 0 - 36% by volume, sputtering evening pressure 0 2 8 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power 0. 5 KW ) by sputtering was used to form a first layer of I tO film (thickness 288. 5 a) on a glass substrate maintained at 0.99 ° C. .

Then, under an atmosphere of argon gas (sputtering pressure 0. 28P a), indium Ichisuzu oxide sintered compact target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z), the second layer of I tO film on the first layer to form a (thickness 6 73. 3A), to obtain a transparent conductive film laminated substrate of the present invention.

Comparative Example 4

Mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 P a) an atmosphere of indium - tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using a single layer made of an ITO film on a glass substrate maintained at 0.99 ° C (film thickness 1069. 2A) by forming to yield the Shirubedenmakuseki layer substrate. '

Comparative Example 5

Under an atmosphere of argon gas (sputtering evening pressure 0. 7 Pa), indium tin oxide sintered compact target, and sputtering using a DC power supply (power 0. 5KW), a glass substrate maintained at 0.99 ° C to form a single layer consisting of I tO film above (thickness 928. 0 a), to obtain a conductive film laminated substrate.

Comparative Example 6

Mixed gas of argon gas and oxygen (oxygen content 0.36% by volume, sputtering evening pressure 0. 7 Pa) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, on a glass substrate maintained at 0.99 ° C to form a single layer consisting of I tO film (thickness 1406. 5 a), to obtain a conductive film laminated board.

Comparative Example 7

Under an atmosphere of argon gas (sputtering pressure 0. 7 Fa), indium tin oxide sintered body target, 0_Rei + 1 Power (0_Rei:? Electricity 0. 4KW, 1: electricity 0. 4 KW, by sputtering using the frequency 13. 56 MHz), a single-layer film made of IT_〇 film on a glass substrate which is maintained at 150 (thickness 1420. 2 Α) by forming, to obtain a conductive film laminated substrate . Conductive film layered substrate obtained per a transparent conductive film laminated substrate and Comparative Examples 4-7 of the present invention obtained in Example 1 3, in the same manner as described above, sheet resistance (Ω / Π), resistivity (Omega · cm) and was obtained transmittance at 620 nm, 540 nm and 460 nm (percent). -

The results are shown in Table 7.

Table 7

Example 14

Mixed gas of argon gas and oxygen (oxygen content 0.3 6 volume%, sputtering pressure 0. 28 P a) under an atmosphere of indium - tin oxide sintered body target, DC power supply (power 0. 5 KW ) by sputtering was used to form a first layer consisting of I tO film on a glass substrate which is maintained at 1 50 (thickness: 3 0 8. 6 a).

Then, under an atmosphere of argon gas (sputtering pressure 0. 28 P a), the indium Ichisuzu oxide sintered body target, RF power (power 1. 5KW, Frequency: 1 3. 5 6MH z). Using the by sputtering, to form a second layer consisting of I tO film (thickness 7 20. OA) on the first layer.

Then, a mixed gas (oxygen content 0.36% by volume, sputtering evening pressure 0. 2 8 P a) of argon gas and oxygen atmosphere of, indium tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), was formed I tO film or Ranaru third layer (film thickness 30 8. 6 a) on the second layer.

Furthermore, under an atmosphere of argon gas (sputtering evening pressure 0. 2 8 P a) ', the indium Ichisuzu oxide sintered compact target, and sputtering using an RF power supply (power 1. 5KW, frequency 13. 56MH z) Te, a fourth layer made of an ITO film to a 3 layer to form a (thickness 7 20. OA), to obtain a transparent conductive film laminated substrate of the present invention.

In the same manner as described above, sheet resistance (Omega / mouth), it was determined resistivity (Omega · cm) and 6 20 nm, transmittance at 540 nm and 460 nm (%).

Sheet resistance (Omega slag) is 8.93, the specific resistance value (Omega - cm) was 1. 84X 10 one 4. Transmittance at 620 nm, 540 nm and 460 nm (%), respectively 91.1%, 87.0%, was 93.7%. For some representative transparent conductive film laminated substrate obtained in the above shows electrical characteristics of the conductive film (the carrier density and mobility) in Table 8. Carrier density 及 Pi mobility of the conductive film, using the Resi Test 8320 manufactured by Toyo Tech two forces Corporation, is a value measured at 23.

Table 8

Then Kara one fill evening showing one of the manufacturing example. Glass substrate (20 Ommx 26 Omm, thickness 0. 7 mm) in place of the light-shielding film, a color resist film and the overcoat layer is formed glass substrate (20 OmmX 26 Omm, thickness 0. 7 mm) except for using the , in the same manner as described above, to produce a color filter having a transparent conductive film are laminated.

Example 15

Mixture of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 Pa) under an atmosphere of indium - tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, maintained at 200, the light-shielding film, color one resist film and O one barcode one coat layer I tO film or Ranaru first layer on a glass substrate formed with a (film thickness 262. OA) It was formed.

Then, under an atmosphere of argon gas (sputtering evening pressure 0. 7 P a), indium - stannate compound sintered evening one target, using a RF power (power 1. 5 KW, frequency 13. 56MH z) by sputtering, to form a second layer of ITO film on the first layer (thickness 6 11. 4A).

Then, a mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, spa Tta圧 0. 7 P a) under an atmosphere of an indium tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), on the second layer by forming a third layer comprising either I tO film (thickness 262. OA), to obtain a color one filter aspect of the present invention.

Example 16

Mixture of argon gas and oxygen (oxygen content 0.542% by volume, sputtering pressure 0. 7 P a) under an atmosphere of indium - tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, formed is maintained at 20, the light shielding film, I tO film or Ranaru first layer from to one resist film and over one coating layer on a glass substrate formed (thickness 232. 9 a) It was.

Then, under an atmosphere of argon gas (sputtering pressure 0. 7 F a), indium tin oxides sintered body target, and sputtering using a power (electricity 1. 5KW, frequency 13. 56MH z), It was formed a second layer consisting of I tO film (thickness 6 98. 8 a) on the first layer. Then, a mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, spa Tsu evening pressure 0. 7 P a) under an atmosphere of indium - tin oxide sintered body target, DC power supply (power by sputtering using a 0. 5KW), on the second layer by forming I tO film or Ranaru third layer (film thickness 232. 9 a), to obtain a color filter aspect of the present invention.

Comparative Example 8

Mixed gas of argon gas and oxygen (oxygen content 0.542% by volume, sputtering evening pressure 0. 7 P a) an atmosphere of indium - tin oxide sintered body target, DC power supply (power 0. 5KW) by sputtering using, maintained at 200 ° C, the light-shielding film, a color resist film and O one bar coating layer I tO film on a glass substrate which is formed either Ranaru single layer film (thickness 1133. OA) They were allowed to form, to obtain a color filter. Comparative Example 9

Under an atmosphere of argon gas (sputtering evening pressure 0. 7 Pa), indium tin oxide 'sintered target, 0 Ji + continuous power (0 .: electricity 0. 4KW, RF: power 0. 4 KW, by sputtering using the frequency 13. 56 MHz), 20 is maintained at CTC, the light-shielding film, a single layer film (thickness 1145.7 consisting I tO film color resist film and the overcoat layer on a glass substrate formed to form a a), to obtain a color one filters.

Examples 15 and of the present invention obtained in 16 color filter and Comparative Examples 8 and 9 obtained in the color filter one diary, were obtained sheet resistance value.

The sheet resistance value was determined as follows. That is, the film surface formed on the glass substrate, uniformly arranged ¾ measurement points 67 points, the resistance value determined using a Mitsubishi Chemical Corporation four-probe resistance meter (MCP T 600), the average of these calculated value to obtain the sheet resistance value further multiplied by a constant = 4.542 4.

The film thickness was measured in the following manner. That, manufactured by Kosaka Laboratory Ltd. two-dimensional fine shape measuring device (ET4000), were measured the film thickness of the formed conductive film on a glass substrate. Measurement sets the measurement points 5 points on a glass substrate, masked with a helmet down tape, peel off the mask after the deposition, the film thickness was measured, and the average was taken as the thickness of the film.

Specific resistance (Ω · cm) was determined by multiplying the film thickness in the sheet resistance value obtained by the four-probe method.

Further, obtained in Example 1 5 and 1 6 with resulting color one filter, and Comparative Examples 8 and 9 obtained in color one filter one diary of the present invention, transmittance (%). That is, by using Hitachi Seisakusho spectrophotometer (U- 2 0 1 0), measured wavelength 2 0 0~9 0 O nm conductive film transmittance of the laminated substrate in the range of (%), deposited transmittance before the light-shielding film and the glass substrate on which the color registration strike film is formed (blank) (%) as a 1 0 0%, 6 2 0 nm, 5 4 0 nm and 4 6 0 transmittance at nm (% ) was calculated. The results are shown in Table 9..

Table 9

Example; I 5 and the color filters one obtained in 1 6 are both in forming the first layer of ITO film, color resist film is not damaged, as a color fill evening one It was equipped with the expected performance.

Claims

The scope of the claims
1. (1) the target of indium tin oxide sintered body, using a DC power supply or DC + RF source, and sputtering evening ring in an atmosphere of a mixed gas of an inert gas or an inert gas and oxygen, I forming a tO film and,
(2) indium tin oxide sintered body and at least one target was exposed, selected from the group consisting of indium oxide sintered body, DC power supply, an RF power supply or DC + RF power, an inert gas atmosphere in sputtering to the step of forming the I tO membrane and Z or oxide Injiumu film on I tO film formed in the above (1)
Transparent conductive film manufacturing method of a multilayer substrate including a.
2. (1) the power of the process and a DC power supply, (2) step ranges transparent conductive film manufacturing method of a multilayer substrate according to the first term of the claims power to RF power.
3. (1) it performs a sputtering process in a mixed gas atmosphere of an inert gas and oxygen,
(2) Step sputtering evening range second term transparent conductive film manufacturing method of a multilayer substrate according to claims to perform ring in an inert gas atmosphere. '4. (1). The power of the process and a DC power supply, (2> Step range transparent conductive film manufacturing method of a multilayer substrate according to the first term of the claims power to DC power.
5. (1) performs a sputtering process in a mixed gas atmosphere of an inert gas and oxygen, (2) the transparent conductive film according to claim 4 for performing sputtering evening ring step in an inert gas atmosphere method of manufacturing a multilayer substrate.
6. (2) Transparent conductive film manufacturing method of a multilayer substrate according to range 囲第 preceding claims target is indium tin oxide sintered body used in the process.
7. A method of ranging first claim of claim forming the I TO film on a substrate, (1) E about and (2) the temperature of the substrate being sputtered processed in step light permeability is less than 300 manufacturing method of the conductive film laminated substrate.
8. (1) process and (2) the temperature of the substrate being sputtered processed in step one hundred and forty to twenty-five 0 ° C is a transparent conductive film manufacturing method of a multilayer substrate according to claim 7 is.
9. (1) the target of indium tin oxide sintered body, using a DC power supply or DC + RF power, sputtering evening and ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, on the substrate to form I tO film of the first layer process, (2) the target, using a DC power supply, an RF power supply or DC + RF power, the by sputtering evening ring in a mixed gas atmosphere of an inert gas and oxygen forming a IT 〇 film of the second layer on the first layer and,
(3> the above target, using a DC power supply or DC + RF power, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, forming the I TO film of the third layer on the second layer step of
Transparent conductive film manufacturing method of a multilayer substrate including a.
10. shielding film on a transparent substrate, a color resist film and at least two layers conductive film method of color one filter one to sequential formation preparation of conductive film formation step
The target (1) indium tin oxide sintered body, using a DC power supply or DC + RF source, and sputtering-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, the I TO film forming and,
(2) indium - at least one target was exposed, selected from the group consisting of tin oxide sintered body, and indium acid I arsenide-sintered body, DC power supply, RF power supply, or DC + RF power used, inert forming a I tO membrane and Z or oxide Injiumu film by sputtering in a gas atmosphere I tO film formed in the above (1)
Power color filter manufacturing method, including.
11. (1) The power step and a DC power supply, (2) process color filters evening one method according to range 囲第 Section 10 claims power to RF power.
12. (1) are performed by the mixed gas atmosphere sputtering inert gas and oxygen process, (2) a sputtering process range eleventh Ki载 Kara one filter of claims carried out in an inert gas atmosphere the method of production.
13. The power supply of the process to a DC power source, (2) a force color filter manufacturing method according to range 囲第 10 preceding claims in which the power of the process a DC power source.
14. (1) have line sputtering in a mixed gas atmosphere of an inert gas and oxygen process, (2) a sputtering process forces color filter according to claim 13 carried out in an inert gas atmosphere Production method.
15. (2) Color filter manufacturing method of a target used in the step described in the scope paragraph 10 according indium tin oxide sintered body.
1 6. A light-shielding film and 請 method determined in the range first 0 wherein forming the ITO film on a substrate color one resist film is formed, is sputtered treated with (1) process and (2) the step the color filter manufacturing method of the temperature of the substrate is 1 4 0-2 5 0.
1 7. Shielding film on a transparent substrate, a color resist film and a method for manufacturing a color filter to sequential form a conductive film of at least three layers, the conductive film forming step
(1) the target of indium tin oxide sintered body, 0_Rei power or 0_Rei + Using the power supply, and sputter-ring in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, to form an ITO film of the first layer on the substrate,
(Step of ¾ the target, using a DC power supply, RF power or DC + RF source, an ITO film of the second layer on the first layer by sputtering in a mixed gas atmosphere of an inert gas and oxygen and,
(3) The above target, 0. Power or 0_Rei + 1? Use the power, by sputtering in a mixed gas atmosphere of an inert gas or an inert gas and oxygen, to form an ITO film of the third layer on the second layer
Kara one Phil evening one of the production method, including.
PCT/JP2002/002135 2001-03-07 2002-03-07 Substrate with deposited transparent condcutive film and method for fabricating color filter WO2002071414A1 (en)

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CN104465933B (en) * 2013-09-18 2018-03-06 上海蓝光科技有限公司 Ito prepared using this film and the film ito led chip production method
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JPH02189816A (en) * 1989-01-17 1990-07-25 Nippon Sheet Glass Co Ltd Method for forming transparent conductive film
JPH03261005A (en) * 1990-03-09 1991-11-20 Fujitsu Ltd Formation of hyaline conductive film
JPH0874034A (en) * 1994-09-09 1996-03-19 Aneruba Kk Formation of ito transparent conductive film
JPH08180748A (en) * 1994-12-21 1996-07-12 Sumitomo Bakelite Co Ltd Transparent electrode
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JPH11335815A (en) * 1998-05-20 1999-12-07 Nippon Sheet Glass Co Ltd Substrate with transparent conductive film and deposition apparatus
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JP2000256842A (en) * 1999-01-08 2000-09-19 Tosoh Corp Ito sputtering target, and production of ito sintered compact and transparent conductive film
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JPH02189816A (en) * 1989-01-17 1990-07-25 Nippon Sheet Glass Co Ltd Method for forming transparent conductive film
JPH03261005A (en) * 1990-03-09 1991-11-20 Fujitsu Ltd Formation of hyaline conductive film
JPH0874034A (en) * 1994-09-09 1996-03-19 Aneruba Kk Formation of ito transparent conductive film
JPH08180748A (en) * 1994-12-21 1996-07-12 Sumitomo Bakelite Co Ltd Transparent electrode
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JPH11335815A (en) * 1998-05-20 1999-12-07 Nippon Sheet Glass Co Ltd Substrate with transparent conductive film and deposition apparatus
JP2000045063A (en) * 1998-07-28 2000-02-15 Teijin Ltd Film with transparent conductive thin film and its production
JP2000256842A (en) * 1999-01-08 2000-09-19 Tosoh Corp Ito sputtering target, and production of ito sintered compact and transparent conductive film
JP2000338506A (en) * 1999-06-01 2000-12-08 Advanced Display Inc Liquid crystal display device and its production

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