JPH03261005A - Formation of hyaline conductive film - Google Patents

Formation of hyaline conductive film

Info

Publication number
JPH03261005A
JPH03261005A JP5929090A JP5929090A JPH03261005A JP H03261005 A JPH03261005 A JP H03261005A JP 5929090 A JP5929090 A JP 5929090A JP 5929090 A JP5929090 A JP 5929090A JP H03261005 A JPH03261005 A JP H03261005A
Authority
JP
Japan
Prior art keywords
film
conductive film
resistance
hyaline
ito
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5929090A
Other languages
Japanese (ja)
Other versions
JP3094421B2 (en
Inventor
Tetsuro Endo
遠藤 鉄郎
Takuya Yoshimi
琢也 吉見
Kenji Okamoto
謙次 岡元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5929090A priority Critical patent/JP3094421B2/en
Publication of JPH03261005A publication Critical patent/JPH03261005A/en
Application granted granted Critical
Publication of JP3094421B2 publication Critical patent/JP3094421B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a conductive film of excellent etching property by forming a hyaline conductive wire of double-layer film structure comprising a first high-resistance ITO film different from a second low-resistance ITO film in membranous quality and the second low-resistance ITO film laminated on the surface of the first ITO film. CONSTITUTION:A polyimide top-coat layer 13 is placed for the purpose of protection on a color filter layer 12 which has been placed on a hyaline glass substrate 11. A first ITO film 22 of 50nm thickness, high resistance and excellent etching property is laid on the top-coat layer in Ar gas under low pressure having a very small amount of O2 added thereto by the use of a high-frequency sputtering device having a metal oxide target which is made of In2O3 having 5 to 10wt.% of SnO2 added thereto. Then a second ITO film 23 of 200nm thickness and low resistance is laid on the film 22 in Ar gas having a very small amount of O2 added thereto under a condition of lower pressure so as to form a hyaline conductive film 21 of double-layer film structure. Although the hyaline conductive film 21 is then patterned in the shape of a specified electrode through a process of photolighography, it can be patterned without difficulty because of its excellent etching property, so that a hyaline electrode pattern 24 can be formed without difficulty with low resistance and excellent accuracy in pattern.

Description

【発明の詳細な説明】 〔概 要〕 各種表示パネルの透明電極等に適用する透明導電膜の形
成方法、特に低抵抗で、かつパターニング時のエツチン
グ特性を向上させるためのITO(Indium Ti
n 0xide)からなる透明導電膜の形成力(産業上
の利用分野〕 本発明は各種表示パネルの透明電極等に用いられる透明
導電膜の形成方法に係り、特に低抵抗で、かつパターニ
ング時のエツチング特性を向上させるためのITO(I
ndium Tin 0xide)からなる透明導電膜
の形成方法に関するものである。
[Detailed Description of the Invention] [Summary] A method for forming a transparent conductive film applied to transparent electrodes of various display panels, in particular a method using ITO (Indium Ti) to have low resistance and improve etching characteristics during patterning.
The present invention relates to a method for forming a transparent conductive film that is used for transparent electrodes of various display panels, etc. The present invention relates to a method for forming a transparent conductive film that is used for transparent electrodes of various display panels, and in particular has a low resistance and a high resistance to etching during patterning. ITO (I
The present invention relates to a method of forming a transparent conductive film made of ndium tin oxide).

ITOからなる透明導電膜は液晶表示パネル、EL表示
パネル、或いはガス放電表示等の平板状表示デバイスに
おける透明電極の形成用として広く用いられており、前
記表示デバイスの大型化、高解像度化、或いは表示駆動
特性等の安定化を実現するためには低抵抗で、かつ電極
パターンをその下地面の材質や表面状態の違いに影響さ
れることなく容易にバターニングし得るITOからなる
透明導電膜が必要とされる。
Transparent conductive films made of ITO are widely used for forming transparent electrodes in flat display devices such as liquid crystal display panels, EL display panels, and gas discharge displays. In order to stabilize the display drive characteristics, etc., a transparent conductive film made of ITO is needed, which has low resistance and can easily pattern the electrode pattern without being affected by the material or surface condition of the underlying surface. Needed.

〔従来の技術〕[Conventional technology]

従来、液晶表示パネルの製造工程において、例えば液晶
層を挟んで対向する一対のガラス基板の内の一方のカラ
ーフィルタを形成したガラス基板上にITOからなる透
明電極を形成する場合、第2図(a)に示すように前記
一方の透明ガラス基板1↓上の所定領域に、赤(R)、
緑(G)、青(B)からなる複数の色素膜パターンを有
するカラーフィルタ1ij12を形成し、そのカラーフ
ィルタ層12上に該カラーフィルタ層12を保護し、か
つその上面を平坦化するために例えばポリイミドからな
る高分子樹脂材を図示のように塗布し、硬化してトップ
コート層13を形成する。
Conventionally, in the manufacturing process of a liquid crystal display panel, for example, when a transparent electrode made of ITO is formed on one of a pair of glass substrates facing each other with a liquid crystal layer in between, on which a color filter is formed, a transparent electrode made of ITO is formed. As shown in a), red (R),
In order to form a color filter 1ij12 having a plurality of pigment film patterns consisting of green (G) and blue (B), to protect the color filter layer 12 on the color filter layer 12, and to flatten the upper surface thereof. For example, a polymeric resin material made of polyimide is applied as shown in the figure and cured to form the top coat layer 13.

しかる後、そのl・ツブコート層上3上を含む前記透明
ガラス基板11上にスパッタリング法等によりITOか
らなる透明導電膜14を被着形成する。
Thereafter, a transparent conductive film 14 made of ITO is deposited on the transparent glass substrate 11 including the top of the L/tub coat layer 3 by sputtering or the like.

次に第2図(b)に示すように前記透明導電膜14をフ
ォトリソグラフイエ程における選択的なエツチングによ
るバターニングによって所望の透明電極パターン15を
形成している。
Next, as shown in FIG. 2(b), the transparent conductive film 14 is patterned by selective etching in a photolithography process to form a desired transparent electrode pattern 15.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで上記した電極形成用のITOからなる透明導電
膜14は、少な(とも1.5〜2.0XIO−’Ω・c
m程度の低抵抗値を有し、かつ電極パターンにバターニ
ングする際のエツチング特性(均一なエツチングにより
部分的なオーバエツチングが生しないこと)が良好であ
ることが要求される。
By the way, the above-mentioned transparent conductive film 14 made of ITO for electrode formation has a small (both 1.5 to 2.0XIO-'Ω·c)
It is required to have a low resistance value of about m, and to have good etching characteristics (uniform etching without local overetching) when patterning the electrode pattern.

しかしながら、従来、トップコート む前記透明ガラス基板11上に被着形成した電極形収用
のITOからなる透明導電膜14が低抵抗である場合、
かかる透明導電膜14を選択的なエツチングによるバタ
ーニングによって透明電極パターン15を形成した際に
、そのエツチング速度が一般に遅く、また基板上の透明
導電膜14部分に比べてトップコート層13上の透明導
電膜14部分が下地の材質、或いは下地面の状態等の違
い等によって均一にエツチング除去され難い傾向があり
、このために、更にエツチングを続行するとオーバエツ
チングが生して透明電極のパターン精度が低下する問題
があった。
However, conventionally, when the transparent conductive film 14 made of ITO used as an electrode and formed on the top coated transparent glass substrate 11 has a low resistance,
When the transparent conductive film 14 is patterned by selective etching to form the transparent electrode pattern 15, the etching speed is generally slow, and the transparent conductive film 14 on the top coat layer 13 is etched more easily than the transparent conductive film 14 on the substrate. The conductive film 14 tends to be difficult to be etched away uniformly due to differences in the underlying material or condition of the underlying surface, and for this reason, if etching is continued, over-etching will occur and the pattern accuracy of the transparent electrode will deteriorate. There was a problem with the decline.

このようなトップコート層13上でオーバエツチングが
生しないITOからなる透明導電膜としては、高抵抗な
ITOからなる透明導電膜が有利であるが、抵抗値の点
で問題があり、この抵抗値を相対的に低下させるために
、該透明導電膜の膜厚を厚くすることも考えられるが、
透明導電膜も厚くなると透過率が悪くなるといった問題
があった。
As a transparent conductive film made of ITO that does not cause overetching on the top coat layer 13, a transparent conductive film made of ITO with high resistance is advantageous, but there is a problem in terms of resistance value. It is conceivable to increase the thickness of the transparent conductive film in order to relatively reduce the
There is also a problem in that as the transparent conductive film becomes thicker, the transmittance deteriorates.

本発明は上記した従来の問題点に鑑み、部分的に形成さ
れた高分子樹脂膜を含むガラス基板上に、低抵抗で、か
つ電極パターンをその下地面の材質や表面状態の違いに
影響されることなく容易にバターニングし得るエツチン
グ特性の良好なTTOからなる透明導電膜を形成可能に
した新規な透明導電膜の形成方法を提供することを目的
とするものである。
In view of the above-mentioned conventional problems, the present invention has been developed to provide a low-resistance electrode pattern on a glass substrate including a partially formed polymer resin film, which is not affected by differences in the material or surface condition of the underlying surface. The object of the present invention is to provide a novel method for forming a transparent conductive film, which makes it possible to form a transparent conductive film made of TTO with good etching properties that can be easily buttered without etching.

〔課題を解決するための手段] 本発明は上記した目的を達成するため、あらかじめ高分
子樹脂膜が部分的に形成されたガラス基板上の該高分子
樹脂膜を含めた基板表面にITOからなる透明導電膜を
被着する際に、膜質の異なる高抵抗な第一ITO膜とそ
の表面に低抵抗な第二ITO膜を積層した二層膜構造の
透明導電膜を形成する構成とする。
[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention has a glass substrate on which a polymer resin film is partially formed in advance, and the substrate surface including the polymer resin film is made of ITO. When depositing the transparent conductive film, a transparent conductive film having a two-layer structure is formed by laminating a first high-resistance ITO film of different film quality and a second low-resistance ITO film on its surface.

〔作 用〕[For production]

本発明の形成方法では、高分子樹脂膜が形成された領域
を有するガラス基板上に、先ずパターニング時の高分子
樹脂膜上でエツチング特性が良好な高抵抗なITO膜を
薄膜状に被着し、その表面に低抵抗なITO膜を被着す
ることにより、低抵抗で、かつ電極パターンを容易にパ
ターニングし得るITOからなる二層膜構造の透明導電
膜を形成することが可能となる。
In the forming method of the present invention, a high-resistance ITO film with good etching properties is first deposited in the form of a thin film on a glass substrate having a region on which a polymer resin film is formed. By depositing a low-resistance ITO film on its surface, it is possible to form a two-layer transparent conductive film made of ITO that has low resistance and can be easily patterned into an electrode pattern.

〔実施例〕〔Example〕

以下図面を用いて本発明の実施例について詳細に説明す
る。
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図(a)〜(b)は本発明に係る透明導電膜の形成
方法の一実施例を順に示す要部断面図であり、第2図(
a)〜(b)と同等部分には同一符号を付している。
FIGS. 1(a) and 1(b) are sectional views of main parts sequentially showing one embodiment of the method for forming a transparent conductive film according to the present invention, and FIG.
Parts equivalent to those in a) to (b) are given the same reference numerals.

本実施例では第1図(a’)に示すように従来と同様に
赤(R)、緑(G)、青(B)からなる複数の色素膜パ
ターンを有するカラーフィルタ層12が形成され、その
カラーフィルタ層12上に保護する形状にポリイ≧ドか
らなる高分子樹脂材(日本合成ゴム製)を1〜3μmの
膜厚に被覆したトップコート層13を設けた一方の透明
ガラス基板11上に、高周波スパッタリング装置、或い
はDCスパッタリング装置、本実施例では酸化錫(Sn
O□)を5〜10重量%程度添加した酸化インジウム(
InzO3)からなる金属酸化物ターゲットを備えた高
周波スパッタリング装置を用いて、0.1〜1.0容量
%の酸素(0□)ガスを添加したアルゴン(Ar)から
なるスパッタガスのガス圧を1.2〜5.0X10−2
torr、高周波の供給パワーを300〜l000W、
基板温度を150〜250°Cとしたスパッタリング条
件で、膜厚が10〜1100n、本実施例では50nm
の膜厚の高抵抗(4,0〜8.0X10−’Ω・cm)
なエツチング特性の良い第一ITO膜22を被着する。
In this embodiment, as shown in FIG. 1(a'), a color filter layer 12 having a plurality of dye film patterns of red (R), green (G), and blue (B) is formed as in the conventional case. On one transparent glass substrate 11, a top coat layer 13 made of a polymeric resin material (manufactured by Japan Synthetic Rubber Co., Ltd.) made of polyide (manufactured by Japan Synthetic Rubber) coated with a film thickness of 1 to 3 μm is provided on the color filter layer 12 in a protective shape. In this example, tin oxide (Sn
Indium oxide (
Using a high-frequency sputtering device equipped with a metal oxide target made of InzO3), the gas pressure of the sputtering gas made of argon (Ar) to which 0.1 to 1.0 volume % oxygen (0□) gas was added was set to 1. .2~5.0X10-2
torr, high frequency supply power of 300~1000W,
Under sputtering conditions where the substrate temperature was 150 to 250°C, the film thickness was 10 to 1100 nm, and in this example, 50 nm.
High resistance film thickness (4.0~8.0X10-'Ω・cm)
A first ITO film 22 having good etching properties is deposited.

引続きその第一ITOJI%22」−に、0.1〜1.
0容量%の酸素(02)ガスを添加したアルゴン(Ar
)からなるスパッタガスのガス圧のみヲ1.oxxo−
2〜1,0×10−3torrに制御した上記スパッタ
リング条件で、100〜11000nの膜厚、本実施例
では200nmの膜厚の低抵抗(1,5〜2.5X10
−’Ω・Cl11)な第二ITO膜23を被着して二層
膜構造のI T Oからなる透明導電膜21を形成する
Next, the first ITOJI%22''-0.1 to 1.
Argon (Ar) supplemented with 0% oxygen (02) gas by volume
) only the gas pressure of the sputtering gas is 1. oxxo-
Under the above sputtering conditions controlled to 2 to 1,0 x 10-3 torr, a low resistance (1,5 to 2.5 x 10
A second ITO film 23 of -'Ω·Cl11) is deposited to form a transparent conductive film 21 made of ITO having a two-layer film structure.

その後、かかる二層膜構造のITOからなる透明導電膜
21をフォトリソグラフィ工程において、例えば30〜
40°Cに加熱した塩酸系エツチング液による選択的な
エツチングにより所定電極形状にパターニングすること
によって、前記第一ITO膜22はトップコート層13
と直接的に接していないので容易にパターニングされ、
次に露出する第二IT○膜23はトップコート層13上
でのエツチング特性が良好であるため、オーバエツチン
グが生しることなく容易にパターニングされる。この結
果、低抵抗でパターン精度の良い透明電極パターン24
を容易に形成することが可能となる。
Thereafter, the transparent conductive film 21 made of ITO having such a two-layer film structure is formed in a photolithography process, for example, from
The first ITO film 22 is formed into the top coat layer 13 by patterning it into a predetermined electrode shape by selective etching with a hydrochloric acid etching solution heated to 40°C.
It is easily patterned because it is not in direct contact with the
The second IT○ film 23 exposed next has good etching characteristics on the top coat layer 13, so it can be easily patterned without overetching. As a result, a transparent electrode pattern 24 with low resistance and high pattern accuracy is obtained.
can be easily formed.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように、本発明に係る透明導電
膜の形成方法によれば、高分子樹脂膜が形成された領域
を有するガラス基板上に、低抵抗で、かつ電極パターン
をその下地面の材質や表面状態の違いに影響されること
なく容易に、精度良くパターニングし得るエツチング特
性の良好なITOからなる二層膜構造の透明導電膜を形
成することが可能となる利点を有し、カラーフィルタ層
を被覆した高分子樹脂膜上にITOからなる透明電極を
バターニング形成する液晶表示パネル等の製造に適用し
て、精度の良い低抵抗な透明電極パターンを容易に形成
することができ、表示品質が向上するなど、実用上の効
果は大きい。
As is clear from the above description, according to the method for forming a transparent conductive film according to the present invention, an electrode pattern is formed on a glass substrate having a region on which a polymer resin film is formed, with low resistance, and on the underlying surface thereof. It has the advantage that it is possible to form a transparent conductive film with a two-layer structure made of ITO with good etching characteristics that can be easily and accurately patterned without being affected by differences in material or surface condition. It can be applied to the manufacture of liquid crystal display panels, etc., in which transparent electrodes made of ITO are formed by patterning on a polymer resin film coated with a color filter layer, and a highly accurate, low-resistance transparent electrode pattern can be easily formed. , the practical effects are great, such as improved display quality.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)及び(b)は本発明に係る透明導電膜の形
成方法の一実施例を順に説明するため の要部断面図、 第2図(a)及び(b)は従来の透明導電膜の形成方法
を順に説明するための要部断面図であ る。 第1図(a)及び(+))において、 11は一方の透明ガラス基板、12はカラーフィルタ層
、13はトップコート層、21は二層膜構造の透明導電
膜、22は第−IT○膜、23は第二I T OII!
、24は透明電極パターンをそれぞれ示す。  9 0
1(a) and (b) are main part sectional views for sequentially explaining one embodiment of the method for forming a transparent conductive film according to the present invention, and FIG. 2(a) and (b) are sectional views of the conventional transparent FIG. 3 is a cross-sectional view of a main part for sequentially explaining a method for forming a conductive film. In FIGS. 1(a) and (+)), 11 is one transparent glass substrate, 12 is a color filter layer, 13 is a top coat layer, 21 is a transparent conductive film with a two-layer film structure, and 22 is the -IT○ Membrane, 23 is the second IT OII!
, 24 indicate transparent electrode patterns, respectively. 9 0

Claims (1)

【特許請求の範囲】 あらかじめ高分子樹脂膜(13)が部分的に形成された
ガラス基板(11)の該高分子樹脂膜(13)を含めた
基板表面に、スパッタリング法によりITOからなる透
明導電膜を被着する際に、 膜質の異なる高抵抗な第一ITO膜(22)とその表面
に低抵抗な第二ITO膜(23)を積層した二層膜構造
の透明導電膜(21)を形成することを特徴とする透明
導電膜の形成方法。
[Claims] A transparent conductive material made of ITO is applied by sputtering to the surface of the glass substrate (11) including the polymer resin film (13) on which a polymer resin film (13) has been partially formed in advance. When depositing the film, a transparent conductive film (21) with a two-layer film structure consisting of a first high-resistance ITO film (22) of different film quality and a second low-resistance ITO film (23) laminated on its surface is used. 1. A method for forming a transparent conductive film, the method comprising forming a transparent conductive film.
JP5929090A 1990-03-09 1990-03-09 Method for forming transparent conductive film Expired - Lifetime JP3094421B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5929090A JP3094421B2 (en) 1990-03-09 1990-03-09 Method for forming transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5929090A JP3094421B2 (en) 1990-03-09 1990-03-09 Method for forming transparent conductive film

Publications (2)

Publication Number Publication Date
JPH03261005A true JPH03261005A (en) 1991-11-20
JP3094421B2 JP3094421B2 (en) 2000-10-03

Family

ID=13109106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5929090A Expired - Lifetime JP3094421B2 (en) 1990-03-09 1990-03-09 Method for forming transparent conductive film

Country Status (1)

Country Link
JP (1) JP3094421B2 (en)

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US6734048B2 (en) 2001-05-14 2004-05-11 Lg.Philips Lcd Co., Ltd. Thin film transistor liquid crystal display and fabrication method thereof
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JP5232787B2 (en) * 2007-08-22 2013-07-10 株式会社アルバック Manufacturing method of color filter
CN103230864A (en) * 2013-04-03 2013-08-07 江西沃格光电科技有限公司 Manufacturing method of anti-static TFT substrate

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JPH05158071A (en) * 1991-12-09 1993-06-25 Oki Electric Ind Co Ltd Production of lower substrate of active matrix liquid crystal display
WO2002071414A1 (en) * 2001-03-07 2002-09-12 Ueyama Electric Co., Ltd. Substrate with deposited transparent condcutive film and method for fabricating color filter
US6734048B2 (en) 2001-05-14 2004-05-11 Lg.Philips Lcd Co., Ltd. Thin film transistor liquid crystal display and fabrication method thereof
KR100532081B1 (en) * 2001-05-14 2005-11-30 엘지.필립스 엘시디 주식회사 Rework method for indium tin oxide in tft-lcd
JP2006133769A (en) * 2004-10-26 2006-05-25 Samsung Electronics Co Ltd Thin film transistor display plate and its manufacturing method
US8207534B2 (en) 2004-10-26 2012-06-26 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
US8288771B2 (en) 2004-10-26 2012-10-16 Samsung Electonics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
US8455277B2 (en) 2004-10-26 2013-06-04 Samsung Display Co., Ltd. Thin film transistor array panel and manufacturing method thereof
JP2006162686A (en) * 2004-12-02 2006-06-22 Ricoh Co Ltd Optical deflecting element, optical deflector provided with the element, and picture display device
JP5232787B2 (en) * 2007-08-22 2013-07-10 株式会社アルバック Manufacturing method of color filter
CN103230864A (en) * 2013-04-03 2013-08-07 江西沃格光电科技有限公司 Manufacturing method of anti-static TFT substrate
CN103230864B (en) * 2013-04-03 2015-03-25 江西沃格光电股份有限公司 Manufacturing method of anti-static TFT substrate

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