CN109811308A - A kind of ITO process for making conducting membrane - Google Patents
A kind of ITO process for making conducting membrane Download PDFInfo
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- CN109811308A CN109811308A CN201910083927.9A CN201910083927A CN109811308A CN 109811308 A CN109811308 A CN 109811308A CN 201910083927 A CN201910083927 A CN 201910083927A CN 109811308 A CN109811308 A CN 109811308A
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- magnetron sputtering
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Abstract
The present invention discloses a kind of ITO process for making conducting membrane, it comprises the following steps that: substrate step 1: being subjected to supersonic cleaning, remove the oxide layer and spot of substrate surface, step 2: substrate is put into the load chamber of magnetron sputtering apparatus, electrostatic is eliminated using ion bombardment transparent film substrate, it is vacuumized after sealing, step 3: resin matrix is transported to sputtering chamber after being heated to 95~100 DEG C, first time deposition is carried out using magnetron sputtering mode, after obtaining the first ITO layer, it is cooled to room temperature, step 4: the first ITO layer coating surface is polished, step 5: the substrate of the first ITO layer of deposition uses magnetron sputtering mode to carry out second of deposition after being again heated to 95~100 DEG C, after obtaining the second ITO layer, cooling chamber is transported to be cooled to room temperature, step 6: substrate after cooling It is put into relief chamber, unloading piece obtains ITO conductive film, and step 7: ITO conductive film is made annealing treatment, and 90~110 DEG C of annealing temperature, annealing time 20 minutes, obtains a kind of ITO conductive film.
Description
Technical field
The present invention relates to a kind of field ITO, specifically a kind of ITO process for making conducting membrane.
Background technique
ITO conductive film refers to the method using magnetron sputtering, sputters transparent indium tin oxide on transparent organic film material
(ITO) conductive film coating and product is obtained through the high temperature anneal.The thickness of ito film layer is different, the electric conductivity of film and thoroughly
Optical property is also different.In recent years, advancing by leaps and bounds with semiconductor processing technology, such as photocell, flat-panel screens, LED shine
The new device such as bright, touch screen is developed rapidly and is largely applied in our daily life.These new devices will be used
Transparent conductive film is as light-receiving surface either light-emitting surface electrode.In conventional transparent conductive film, ITO (tin indium oxide mixture)
One kind that film is the most frequently used and performance is best.In response to this, it is proposed that a kind of ITO process for making conducting membrane, ITO layer
The strong effect of binding force between resin matrix, the transmitance of product is high, resistivity is low.
Summary of the invention
The purpose of the present invention is to provide a kind of ITO process for making conducting membrane, the binding force between ITO layer and resin matrix
Strong effect, the transmitance of product is high, resistivity is low, and substrate is thoroughly cleaned and polished in production process, is improved attached
Performance, while also improving the service life of film.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of ITO process for making conducting membrane, comprises the following steps that:
Step 1: carrying out supersonic cleaning for substrate, removes the oxide layer and spot of substrate surface.
Substrate: being put into the load chamber of magnetron sputtering apparatus by step 2, is eliminated using ion bombardment transparent film substrate quiet
Electricity is vacuumized after sealing.
Step 3: resin matrix is transported to sputtering chamber after being heated to 95~100 DEG C, carries out first using magnetron sputtering mode
Secondary deposition is cooled to room temperature after obtaining the first ITO layer.
Step 4: the first ITO layer coating surface is polished.
Step 5: using magnetron sputtering side after the substrate that step 4 deposits the first ITO layer is again heated to 95~100 DEG C
Formula carries out second and deposits, and after obtaining the second ITO layer, is transported to cooling chamber and is cooled to room temperature.
Step 6: substrate after cooling is put into relief chamber in step 5, and unloading piece obtains ITO conductive film.
Step 7: step 6 acquisition ITO conductive film is made annealing treatment, 90~110 DEG C of annealing temperature, annealing time 20
Minute, obtain a kind of ITO conductive film.
Further, the visible light transmittance of 30 μm~200 μm of the base material thickness, substrate is 93% or more, and substrate is
Resin matrix.
Further, the first ITO layer coating surface surface roughness is not higher than 2.5nm.
Further, the oxidation that indium oxide target used in the magnetron sputtering apparatus is 94.5% by weight percentage
The tin oxide that indium and weight percentage are 5.5% forms.
Further, direct current/radio-frequency power supply, 160~170V of sputtering voltage, magnetic field strength are used when the magnetron sputtering
1100G~1450G, process gas use argon gas and oxygen mixed gas, and argon gas in mixed gas: the volume ratio of oxygen is 2.5:
1.2。
Further, the ITO conductive film detection data meets following standard: surface resistance: 200~250 Ω/m2, face electricity
Uniformity: MD≤± 3%, TD≤± 5% is hindered, total light transmittance: >=93%, surface hardness (pencil hardness): >=3H.
Beneficial effects of the present invention:
1, the strong effect of binding force between ITO layer of the present invention and resin matrix, the transmitance of product is high, resistivity is low.
2, substrate is thoroughly cleaned and is polished in production process of the present invention, improves adhesion property, while also improving
The service life of film.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the invention is clearly and completely described,
Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, all other embodiment obtained by those of ordinary skill in the art without making creative efforts, all
Belong to the scope of protection of the invention.
A kind of ITO process for making conducting membrane, comprises the following steps that:
Step 1: carrying out supersonic cleaning for substrate, removes the oxide layer and spot of substrate surface, and 30 μm of base material thickness~
200 μm, the visible light transmittance of substrate is 93% or more, and substrate is resin matrix.
Substrate: being put into the load chamber of magnetron sputtering apparatus by step 2, is eliminated using ion bombardment transparent film substrate quiet
Electricity is vacuumized after sealing.
Step 3: resin matrix is transported to sputtering chamber after being heated to 95~100 DEG C, carries out first using magnetron sputtering mode
Secondary deposition is cooled to room temperature after obtaining the first ITO layer.
Step 4: polishing the first ITO layer coating surface, and the first ITO layer coating surface surface roughness is not higher than
2.5nm。
Step 5: using magnetron sputtering side after the substrate that step 4 deposits the first ITO layer is again heated to 95~100 DEG C
Formula carries out second and deposits, and after obtaining the second ITO layer, is transported to cooling chamber and is cooled to room temperature；
Step 6: substrate after cooling is put into relief chamber in step 5, and unloading piece obtains ITO conductive film；
Step 7: step 6 acquisition ITO conductive film is made annealing treatment, 90~110 DEG C of annealing temperature, annealing time 20
Minute, obtain a kind of ITO conductive film.
Indium oxide and weight percent of the indium oxide target used in magnetron sputtering apparatus by weight percentage for 94.5%
The tin oxide that content is 5.5% forms.
When the magnetron sputtering use direct current/radio-frequency power supply, 160~170V of sputtering voltage, magnetic field strength 1100G~
1450G, process gas use argon gas and oxygen mixed gas, argon gas in mixed gas: the volume ratio of oxygen is 2.5:1.2.
Following standard: surface resistance: 200~250 Ω/m is met to the ITO conductive film detection data of production2, surface resistance is uniform
Property: MD≤± 3%, TD≤± 5%, total light transmittance: >=93%, surface hardness (pencil hardness): >=3H.
Embodiment 1
Use a kind of ITO process for making conducting membrane of following making step:
Step 1: carrying out supersonic cleaning for substrate, removes the oxide layer and spot of substrate surface, and 30 μm of base material thickness~
200 μm, the visible light transmittance of substrate is 93% or more, and substrate is resin matrix.
Substrate: being put into the load chamber of magnetron sputtering apparatus by step 2, is eliminated using ion bombardment transparent film substrate quiet
Electricity is vacuumized after sealing.
Step 3: resin matrix is transported to sputtering chamber after being heated to 95~100 DEG C, carries out first using magnetron sputtering mode
Secondary deposition is cooled to room temperature after obtaining the first ITO layer.
Step 4: polishing the first ITO layer coating surface, and the first ITO layer coating surface surface roughness is not higher than
2.5nm。
Step 5: using magnetron sputtering side after the substrate that step 4 deposits the first ITO layer is again heated to 95~100 DEG C
Formula carries out second and deposits, and after obtaining the second ITO layer, is transported to cooling chamber and is cooled to room temperature；
Step 6: substrate after cooling is put into relief chamber in step 5, and unloading piece obtains ITO conductive film；
Step 7: step 6 acquisition ITO conductive film is made annealing treatment, 90~110 DEG C of annealing temperature, annealing time 20
Minute, obtain a kind of ITO conductive film.
Indium oxide and weight percent of the indium oxide target used in magnetron sputtering apparatus by weight percentage for 94.5%
The tin oxide that content is 5.5% forms.
When the magnetron sputtering use direct current/radio-frequency power supply, 160~170V of sputtering voltage, magnetic field strength 1100G~
1450G, process gas use argon gas and oxygen mixed gas, argon gas in mixed gas: the volume ratio of oxygen is 2.5:1.2.
To the ITO conductive film detection data of production, ITO conduction membrane surface resistance: 235 Ω/m2, surface resistance uniformity: MD≤
± 3%, TD≤± 5%, total light transmittance=93%, surface hardness (pencil hardness)=3H.
In the description of this specification, the description of reference term " one embodiment ", " example ", " specific example " etc. means
Particular features, structures, materials, or characteristics described in conjunction with this embodiment or example are contained at least one implementation of the invention
In example or example.In the present specification, schematic expression of the above terms may not refer to the same embodiment or example.
Moreover, particular features, structures, materials, or characteristics described can be in any one or more of the embodiments or examples to close
Suitable mode combines.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.
Claims (6)
1. a kind of I TO process for making conducting membrane, which is characterized in that comprise the following steps that:
Step 1: carrying out supersonic cleaning for substrate, removes the oxide layer and spot of substrate surface；
Substrate: being put into the load chamber of magnetron sputtering apparatus by step 2, eliminates electrostatic using ion bombardment transparent film substrate, close
It is honored as a queen and is vacuumized；
Step 3: resin matrix is transported to sputtering chamber after being heated to 95~100 DEG C, and it is heavy for the first time to be carried out using magnetron sputtering mode
Product, after obtaining TO layers of the first I, is cooled to room temperature；
Step 4: TO layers of coating surface of the first I are polished；
Step 5: using magnetron sputtering mode after the substrate of TO layers of the first I of step 4 deposition is again heated to 95~100 DEG C
It carries out second to deposit, after obtaining the second ITO layer, is transported to cooling chamber and is cooled to room temperature；
Step 6: substrate after cooling is put into relief chamber in step 5, and unloading piece obtains ITO conductive film；
Step 7: step 6 acquisition ITO conductive film is made annealing treatment, 90~110 DEG C of annealing temperature, annealing time 20 divides
Clock obtains a kind of ITO conductive film.
2. a kind of ITO process for making conducting membrane according to claim 1, which is characterized in that 30 μm of the base material thickness~
200 μm, the visible light transmittance of substrate is 93% or more, and substrate is resin matrix.
3. a kind of ITO process for making conducting membrane according to claim 1, which is characterized in that the first ITO layer coating table
Face surface roughness is not higher than 2.5nm.
4. a kind of ITO process for making conducting membrane according to claim 1, which is characterized in that the magnetron sputtering apparatus institute
The tin oxide group that the indium oxide and weight percentage that indium oxide target is 94.5% by weight percentage are 5.5%
At.
5. a kind of ITO process for making conducting membrane according to claim 1, which is characterized in that used when the magnetron sputtering
Direct current/radio-frequency power supply, 160~170V of sputtering voltage, magnetic field strength 1100G~1450G, process gas are mixed using argon gas and oxygen
Close gas, argon gas in mixed gas: the volume ratio of oxygen is 2.5:1.2.
6. a kind of I TO process for making conducting membrane according to claim 1, which is characterized in that the ITO conductive film detection
The following standard of data fit: surface resistance: 200~250 Ω/m2, surface resistance uniformity: MD≤± 3%, TD≤± 5%, full light
Transmitance: >=93%, surface hardness (pencil hardness): >=3H.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242849A (en) * | 2021-11-25 | 2022-03-25 | 福建兆元光电有限公司 | ITO annealing method for improving LED brightness |
| CN115074666A (en) * | 2022-06-13 | 2022-09-20 | 桂林电子科技大学 | Preparation method of multilayer composite ITO film |
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| CN103388126A (en) * | 2013-07-22 | 2013-11-13 | 上海冠旗电子新材料股份有限公司 | Processing method for ITO conductive film with low impedance and high light transmittance |
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| CN114242849A (en) * | 2021-11-25 | 2022-03-25 | 福建兆元光电有限公司 | ITO annealing method for improving LED brightness |
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| CN115074666A (en) * | 2022-06-13 | 2022-09-20 | 桂林电子科技大学 | Preparation method of multilayer composite ITO film |
| CN115074666B (en) * | 2022-06-13 | 2023-11-03 | 桂林电子科技大学 | Preparation method of multilayer composite ITO film |
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Application publication date: 20190528 |