WO2002059700A1 - Systeme de commande et controleur - Google Patents

Systeme de commande et controleur Download PDF

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Publication number
WO2002059700A1
WO2002059700A1 PCT/JP2001/008240 JP0108240W WO02059700A1 WO 2002059700 A1 WO2002059700 A1 WO 2002059700A1 JP 0108240 W JP0108240 W JP 0108240W WO 02059700 A1 WO02059700 A1 WO 02059700A1
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WIPO (PCT)
Prior art keywords
value
temperature
control
target
state
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PCT/JP2001/008240
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English (en)
Japanese (ja)
Inventor
Hirofumi Hirayama
Original Assignee
Kabushiki Kaisha Yamatake
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Kabushiki Kaisha Yamatake filed Critical Kabushiki Kaisha Yamatake
Publication of WO2002059700A1 publication Critical patent/WO2002059700A1/fr
Priority to US10/626,543 priority Critical patent/US6911628B1/en

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B11/00—Automatic controllers
    • G05B11/01—Automatic controllers electric
    • G05B11/36—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential
    • G05B11/42—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P. I., P. I. D.
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B5/00—Anti-hunting arrangements
    • G05B5/01—Anti-hunting arrangements electric

Definitions

  • the present invention relates to PID control (Proportional control, Integrated drive control) and IMC (Internal motor control) control used when controlling the temperature of a wafer in a semiconductor process.
  • the present invention relates to a control system, for example, to a control system that can be suitably used when, for example, using a plurality of heaters to uniformly control the temperature of a wafer over the entirety.
  • FIG. 1 is a system configuration diagram showing the configuration of a conventional basic PID control system.
  • reference numeral 222 denotes a wafer installed in a constant temperature chamber (not shown)
  • reference numeral 222 denotes a thermocouple for detecting a temperature near the wafer 222
  • reference numeral 222 denotes a thermocouple of the thermocouple 222.
  • PID calculation means for inputting the target steady-state temperature together with the detected temperature and outputting a manipulated variable so that the detected temperature converges to the target steady-state temperature
  • 227 is control means for performing control based on this manipulated variable
  • 228 is Reference numeral 229 denotes a power supply installed near the wafer 224, reference numeral 229 denotes a power supply, and reference numeral 230 denotes a control loop for connecting the heater 228 and the power supply 229 to the control means 227.
  • the PID calculation means 222 determines the P based on the temperature difference between the detected temperature of the thermocouple 22 and the target steady-state temperature.
  • An operation amount based on the ID control is output, and the control means 227 controls the energization time to the power supply 228 based on the operation amount.
  • thermocouple 225 In such a conventional basic PID control system, it is possible to perform control so that the arrangement position of the thermocouple 225 and the temperature in the vicinity thereof are stabilized at the target steady-state temperature.
  • Japanese Patent Application Laid-Open No. 7-916168 discloses a technique in which a space related to temperature control is divided and grasped for each zone, and PID control is separately performed for each zone.
  • PED control is performed separately on one control object as described above, even if the control is performed using the same target steady-state temperature, it is actually different. Since the timing to reach the target steady-state temperature differs from zone to zone due to differences in the zone environment and the positional relationship between zones, the start and end timings of PID control in each zone must be set.
  • FIG. 2 is a system configuration diagram showing the configuration of another conventional PID control system disclosed in Japanese Patent Application Laid-Open No. 7-916168.
  • reference numeral 231 denotes a process controller that outputs a set temperature based on a predetermined program
  • 232 denotes a ramp signal generation circuit that outputs a ramp waveform having the set temperature as a final temperature
  • 233 denotes a ramp signal generation circuit.
  • 234 is a furnace whose temperature is controlled by this PID controller 233.
  • 235 is a plurality of furnace temperature sensors.
  • 236 is the initial setting memory for setting the reference temperature
  • 237 is the evening when the temperature detected by each furnace temperature sensor 235 matches the reference temperature
  • the time difference is output Time difference measurement circuit
  • This is a time difference table memory for storing data for controlling the ramp signal generation timing of the ramp signal generation circuit 232 based on the time difference between the two.
  • the ramp signal generation circuit 232 When the set temperature is output from the process controller 231 with the comparison reference temperature set in the memory 236, the ramp signal generation circuit 232 generates a ramp waveform with this set temperature as the final temperature.
  • the ramp waveform is input to the PID controller 233 as the target steady-state temperature, and the manipulated variable is calculated and output.
  • the temperature of the furnace 234 changes toward the set temperature.
  • the time difference measurement circuit 237 measures the matching timing and stores the time difference in the time difference table memory. Output to 2 3 8.
  • the time difference table memory 238 selects table data that cancels out this time and outputs this to the ramp signal generation circuit 232.
  • the ramp signal generation circuit 232 adjusts the output start timing of the ramp waveform for the time set by the time difference table memory 238. Then, the temperature of the furnace 234 is controlled to the set temperature based on the lamp waveform. Therefore, it is theoretically possible to control the temperature by performing a plurality of PID controls on one furnace 234, and to have the timing to reach the target steady-state temperature. It is possible.
  • FIG. 3 is a configuration diagram of a control system using a conventional control device.
  • 26 1 is a control device with a PID control function
  • 26 2 is a constant temperature bath
  • 26 3 is a wafer placed inside the constant temperature bath
  • 26 4 is the manipulated variable from the control device 26 1
  • a temperature sensor for controlling the temperature inside the thermostatic bath 26 2 based on the temperature sensor 26 2 is a temperature sensor for detecting the temperature near the wafer 26 3.
  • the control device 261 equipped with a PID control function, inputs the measured temperature value detected by the temperature sensor 265, and uses the PID control function so that the measured value matches the preset target temperature set value. Calculation is performed to calculate the manipulated variable. Then, this manipulated variable is output to 264.
  • the heater 264 controls the temperature inside the constant temperature bath 262 by, for example, changing the energizing time according to the operation amount. In this way, control is performed so that the temperature of wafer 263 coincides with the preset target temperature.
  • Fig. 4 the control system shown in Fig. 4 is generally used.
  • 271 is a control device with a PID control function
  • 272 is a thermostat
  • 273 is a wafer placed inside the thermostat 272
  • 274-1 is the ch 1 operation amount
  • the temperature of the first area 2 7 3 1 1 inside the thermostat 2 7 2 is controlled based on the temperature
  • 2 7 4-2 is the inside of the thermostat 2 7 2
  • 2 7 5 is a temperature sensor for detecting the temperature near the wafer 2 7 3
  • Target set value setting means for setting the target temperature of 273, 282 is a deviation between the temperature measured value detected by the temperature sensor 275 and the set value set by the target set value setting means 281 Adder to be calculated
  • 283 PID calculation means that performs PID calculation from the deviation calculated by adder 282 and outputs the manipulated variable
  • 284 Manipulation limit means that limits the upper and lower limits of the
  • First offset operation means and second offset operation means for performing offset operation 287 is a branching unit for branching the operation amount output from the operation amount limiting means 284, and 288 is an operation amount Parameter setting means for setting parameters such as limiting means 284 by manual operation such as a keyboard.
  • the controller 271 inputs the measured temperature value detected by the temperature sensor 275, and sets the deviation by the adder 282 in accordance with the set value that is the target temperature set by the target set value setting means 281. Is calculated, PID calculation is performed by PID calculation means 283 to determine the operation amount. Then, the operation amount is subjected to the upper limit and the lower limit by the operation amount limiting means 284, and then branched at the branching unit 287. The branched operation amount becomes the ch1 operation amount via the first ratio operation means 285-1 and the first offset operation means 286-1. Similarly, the branched operation amount becomes the ch 2 operation amount via the second ratio operation means 285-2 and the second offset operation means 2886-2.
  • the ch 1 operation amount is output to the heater 274-2, and the heat 274-2 is changed by changing the energizing time according to the ch 1 operation amount. Control the temperature in the area 2 7 3-1 in 1. In the same manner, the ch 2 operation amount is output to the heater 2 74-2, and the heater 2 74-2 is controlled by the ch 2 operation amount in the inside of the constant temperature bath 27 2. Region 2 2 7 3—Controls the temperature of 2.
  • the parameter of the offset calculation means 2886-2 is preset by the parameter setting means 288 by inputting a key (not shown) so that the temperature of the wafer 2773 coincides with the target temperature.
  • the heater 2 7 4-1 arranged in the first area 2 73-1 and the heater 2 7 4 arranged in the second area 2 7 3-2 -Control is performed so that the temperature in each area matches the preset target temperature by the control in -2. That is, control is performed so that the entire temperature of the wafer 273 coincides with a preset target temperature.
  • each PID control changes to the target steady-state temperature with the same heating curve (for that purpose, the above-described ramp signal generation circuit is used).
  • the heating carp of each PID control generally differs from that. (In other words, the time constant of each PID control is generally different), and when the final target steady-state temperature is directly input to each PID control, the time required to reach the above-mentioned comparison reference temperature is reached. Even if control is performed to match the temperature, the manner in which the temperature changes during the heating period differs for each zone, and heat will flow between the zones due to temperature gradients. Therefore, the overshoot / undershoot occurs after the set temperature is reached.
  • the conventional control device is configured as shown in FIGS. 3 and 4, even if the area of the controlled object is large, it is possible to control the temperature to be uniform over the entire controlled object. It can be said that there is.
  • the wafer to be controlled 27 When 3 is changed to another type of wafer, the temperature control of the first area 273-1-1 is not performed because the temperature sensor 275 is located in the first area 273-1-1. The temperature is properly controlled, but the temperature of the second region 273--2 cannot be properly controlled due to a difference in the thermal conductivity of the wafer 273 or the like. Even if the temperature sensor 275 is arranged at the center of the constant temperature bath 272, the control of the temperature not only in the second area 2733-1 but also in the first area 2733-1 is performed. Not done properly.
  • FIG. 5 is a temperature characteristic diagram inside the constant temperature bath 272 in the conventional control system shown in FIG.
  • (1) is a temperature characteristic diagram of a certain wafer
  • (2) is a temperature characteristic diagram of another type of wafer.
  • 291 and 294 are the target temperature set values set by the target set value setting means 281
  • 292 and 295 are the temperature sensors in the first area 273-1.
  • Reference numeral 75 denotes a detected temperature value
  • reference numerals 293 and 2996 denote temperature measured values detected by a temperature sensor (not shown) in the second area 273-2-2.
  • the manipulated variable limiting means 2 84 and the first ratio calculating means 28 are so set that the measured temperature values 29 2 and 29 3 match the target set temperature at the time of adjustment in advance. 5-1, second ratio calculation means 2 8 5—2, first offset calculation means 2 866-1, and second offset calculation means 2
  • the temperature measurement value of the second area 273-2-2 is obtained. 6 has a certain deviation, and the temperature does not become uniform throughout.
  • the second ratio calculation means 2855-2 and the second offset calculation are performed so that the temperature of the wafer after the change can be controlled to be uniform throughout.
  • Means 2 8 6-2 It is necessary to reset the parameters again. In this case, it is necessary to reset the parameter every time the control target is changed, which is inconvenient. Similarly, even when environmental conditions around the controlled object change, there is a problem that parameters need to be set again to appropriate values.
  • the present invention has been made to solve the above-described problems.
  • the control target is divided into a plurality of zones and the control is performed for each zone, and the original control is performed without relying on a lamp signal generation circuit or the like.
  • An object of the present invention is to provide a control device capable of performing control for causing the control device to perform the control. Disclosure of the invention
  • the control system is a control system that performs control so that a detected value that has detected a state of a control target converges to a target steady-state value, wherein the target steady-state value and the detected value are input, and Main operation means for generating an operation amount that changes so as to converge to a target steady-state value and controlling the control target; main detection means for outputting the detection value to the main operation means; and detection of the main detection means Value and another detection value are input, and an operation amount that changes so that the other detection value converges to the detection value is generated, and the sub-operation means for controlling the control target; Secondary detection that outputs other detection values Output means.
  • the main calculation means and each sub-calculation means can control the temperature with a very small temperature difference, which is very small even if there is a variation in heat radiation characteristics in the respective receiving zones. Therefore, by simply setting the target steady-state temperature in the main calculation means, it is possible to raise the temperature of each zone to the target steady-state temperature, for example, by using a similar heating curve. It is possible to stabilize at the target steady-state temperature without causing a temperature difference between zones without performing any steps, etc., thus effectively suppressing the occurrence of overshoot and undershoot after reaching the target steady-state temperature. can do. As a result, for example, in a process of manufacturing a semiconductor element such as a CCD sensor, an effect that the temperature of the wafer can be suitably controlled can be obtained.
  • the control system according to the present invention is provided with a first selector that receives a target steady-state value and a detection value of the main detection unit, selects one of them, and outputs the selected one to the sub-operation unit.
  • the slave arithmetic unit adds a predetermined offset value to the input target steady-state value or the input detection value of the main detection unit, and controls the state of the control target based on the added value. Things.
  • the control system according to the present invention may include a target steady value memory for outputting the stored target steady value to the main calculation means and the sub calculation means.
  • the control system provides a target steady value memory for outputting a target steady value equal to the total number of the main operation means and the sub operation means, and an input source of the main operation means or each of the sub operation means. Is provided between the plurality of target steady value memories.
  • each zone can be controlled by a single target steady-state memory, and each sub-operation means can be controlled separately from the main operation means. This is a very convenient system. There is an effect that can be made.
  • a control system is a control system that performs control so that a detected value that has detected a state of a control target converges to a target steady-state value, wherein the target steady-state value and the detected value are input, and A calculating means for outputting a first manipulated variable that changes so as to converge to a target steady-state value; and a first manipulated variable that is input and multiplied by a predetermined ratio coefficient value set in advance to obtain a first manipulated variable.
  • a plurality of multiplying means for outputting a second manipulated variable, and controlling a control target based on the second manipulated variable.
  • the temperature of each zone can be raised to the target steady-state temperature by, for example, a similar heating curve.
  • the target steady-state temperature can be stabilized without a temperature difference between zones, it is possible to effectively suppress the occurrence of overshoot and undershoot after the target steady-state temperature is reached. it can.
  • the temperature and the like can be suitably controlled.
  • control system is such that each multiplier is provided with a ratio coefficient input means for setting a value of a ratio coefficient value.
  • the control system includes a ratio coefficient value for suppressing an error of the detected value of the controlled object with respect to the target steady-state value, based on a detected value of the controlled object provided corresponding to the plurality of multiplying means.
  • Ratio coefficient setting means for calculating and setting each of the multiplication means is provided.
  • the control system provides the same number of calculation means as the number of multiplication means.
  • a first selector for switching the input source of each multiplying means among the plurality of arithmetic means is provided.
  • each zone can be operated based on the first operation amount of one arithmetic unit, or based on the first operation amount of a plurality of arithmetic units.
  • the control system according to the present invention is provided with a second selector that receives the first operation amount and the second operation amount and selects and outputs one of them, based on the output of the second selector.
  • the control of the control target is performed.
  • measurement can be performed without correcting the value set in the multiplication means to 1 each time in order to newly set a ratio coefficient value.
  • it is possible to measure a new ratio coefficient without being conscious of the multiplication means one by one, and to keep the previous value, resulting in a very convenient system. .
  • the control system includes: a plurality of operation means for changing the state of the control target independently of each other; a detection means for detecting the state of the control target; and a detection value of the state of the control target by the detection means being a target steady state.
  • Each of the manipulated variables output to is corrected using a detected value deviation of a detected value near the operating means with respect to a certain detected value.
  • the detected value deviation of each detected value can be eliminated. Therefore, the plurality of detected values will change to the target steady-state value on almost the same curve (change characteristics). Even if the change characteristics originally fluctuate due to differences in the operating means and assigned zone, for example. Can reach the final target steady-state value almost simultaneously. Further, occurrence of overshoot / undershoot after reaching the set temperature can be suppressed.
  • the control target is divided into multiple zones and controlled for each zone, the timing to reach the target steady-state temperature is aligned by the original control without relying on a lamp signal generation circuit, etc.
  • the occurrence of overshoot and undershoot after the temperature has been reached can be effectively suppressed, and for example, the effect of appropriately controlling the wafer temperature in the process of manufacturing semiconductor devices such as CCD sensors can be obtained. is there.
  • the control means stores a target steady-state value.
  • the target steady-state value is given as an individual target value to an arithmetic circuit corresponding to the operation means in which the reference detection value is detected in the vicinity, and the other detection circuits receive the reference detection value. It is given as an individual target value.
  • each arithmetic circuit performs PID control or IMC control in accordance with a control deviation of each detected value from an individual target value.
  • the value obtained by adding the detected value deviation to the detected value of the reference, or the value obtained by adding the value obtained by filtering the detected value deviation to the detected value of the reference instead of the detected value itself of the reference Is input.
  • the arithmetic circuit corresponding to the reference detection value selects the arithmetic circuit which has the slowest temperature change when the same individual target value is given to all arithmetic circuits.
  • the value obtained by filtering the detected value deviation using the average value of the differential control coefficient of the other arithmetic control circuit and the differential control coefficient of the selected arithmetic circuit is added to the other arithmetic circuit.
  • the entered value is input.
  • a control device calculates an operation amount so as to match a measured value representing a state of a control target composed of a plurality of regions with a preset set value, and outputs an operation amount for each of these regions.
  • a control device that calculates a first manipulated variable and a second manipulated variable based on a measured value of the first area to be controlled and a preset set value, and calculates the first manipulated variable and the second manipulated variable.
  • An operation amount calculating unit that outputs an operation amount to the first area; and a second operation amount based on a measurement value in another area of the control target and a preset set value or a measurement value in the first area.
  • Deviation control means for calculating the operation amount of the third, and the operation amount calculated based on the second operation amount calculated by the operation amount calculation means and the third operation amount calculated by the deviation control means, to another area. It is provided with an adder for outputting the same.
  • control is performed to keep the measured value in that state consistent with the preset target set value over the entire controlled object without changing any parameters. There is an effect that can be performed.
  • An operation amount calculating unit of the control device includes: a first operation amount limiting unit that limits an upper limit and a lower limit to a deviation calculated based on the measured value of the first region and a preset set value; First and second ratio calculating means for branching the manipulated variable output from the first manipulated variable limiting means and multiplying the branched manipulated variable by a preset set value; The first and second control values are added to the manipulated variable output from the First and second offset calculating means for calculating a second manipulated variable, wherein the deviation limiting means sets an upper limit and a lower limit on the deviation calculated based on the measured value of another area and a preset set value. And a second operation amount restricting means for calculating a third operation amount.
  • FIG. 1 is a system configuration diagram showing the configuration of a conventional basic PID control system.
  • FIG. 2 is a system configuration diagram showing the configuration of another conventional PID control system.
  • FIG. 3 is a configuration diagram of a control system using a conventional control device.
  • FIG. 4 is a configuration diagram of another control system using a conventional control device.
  • FIG. 5 is a temperature characteristic diagram of a control system using a conventional control device.
  • FIG. 6 is a system configuration diagram showing a PID control system according to Embodiment 1 of the present invention.
  • FIG. 7 is an explanatory diagram for describing a method of selecting a main control loop in the first embodiment of the present invention.
  • FIG. 8 is a system configuration diagram showing a PID control system according to Embodiment 2 of the present invention.
  • FIG. 9 is an explanatory diagram showing an example of temperature control according to Embodiment 2 of the present invention.
  • FIG. 10 is an explanatory diagram showing another example of the temperature control according to the second embodiment of the present invention.
  • FIG. 11 is a system configuration diagram showing a PID control system according to Embodiment 3 of the present invention.
  • FIG. 12 is an explanatory diagram showing an example of temperature control according to Embodiment 3 of the present invention.
  • FIG. 13 is a block diagram showing a configuration of a PID control unit according to Embodiment 4 of the present invention.
  • FIG. 14 is a system configuration diagram showing a PID control system according to Embodiment 5 of the present invention.
  • FIG. 15 is a flowchart showing a processing procedure up to setting of a ratio coefficient according to Embodiment 5 of the present invention.
  • FIG. 16 is a system configuration diagram showing a PID control system according to Embodiment 6 of the present invention.
  • FIG. 17 is a block diagram showing a configuration of a PID control unit according to Embodiment 7 of the present invention.
  • FIG. 18 is a system configuration diagram showing a PID control system according to Embodiment 8 of the present invention.
  • FIG. 19 is a system configuration diagram showing a PID control system according to Embodiment 9 of the present invention.
  • Fig. 20 shows the temperature characteristics when both the added value input to the first subtractor and the added value input to the second subtractor in the PID control system shown in Fig. 19 are set to the target steady-state temperature.
  • FIG. 21 is an explanatory diagram showing a temperature control effect of the PID control system according to Embodiment 9 of the present invention.
  • FIG. 22 is a system configuration diagram showing a PID control system according to Embodiment 10 of the present invention.
  • FIG. 23 shows a control system using a control device according to Embodiment 11 of the present invention. It is a block diagram of a stem.
  • FIG. 24 is a configuration diagram of a control system using a control device according to Embodiment 12 of the present invention.
  • FIG. 25 is a temperature characteristic diagram of a control system using the control device according to Embodiment 12 of the present invention.
  • FIG. 6 is a system configuration diagram showing a PID control system according to Embodiment 1 of the present invention.
  • 1 is a constant temperature chamber
  • 2 is a CCD sensor wafer installed in the constant temperature chamber
  • 3 is a thermocouple which is disposed near the wafer 2 and detects temperature
  • 4 is a plurality of thermocouples.
  • a PID control unit 5 that performs predetermined control using the detected temperatures of the thermocouples 3, 3,..., 3 has a one-to-one correspondence with each thermocouple 3 near the wafer 2 6 is a power supply provided for each heater 5 and ⁇ is a control loop connecting the heater 5 and the power supply 6 in series to the PID control unit 4, and 8 is a control loop.
  • Ventilation outlets 9 are installed in the constant temperature room 1, and fans 9 are installed inside the ventilation openings 8.
  • 10 is a target steady-state temperature memory (target steady-state memory) in which a target steady-state temperature is set, and 11 is one thermocouple 3 (hereinafter, main thermocouple 3 (main detection means).
  • the main subtractor main PID calculation means
  • Main PID operation circuit that outputs the main operation amount based on (Main PID operation means
  • the main operation amount is input to the main control circuit 13 and the main control circuit (13) performs energization control of the control loop 7 (hereinafter, referred to as main control loop 7) corresponding to the main thermocouple 3 according to the main operation amount.
  • Main operation means ).
  • a slave PID operation circuit (slave PID calculation means) which outputs a slave operation amount based on PID control calculation so that the slave deviation temperature converges to 0 ), 16 receives the input of the slave operation amount and controls the energization control of the control loop 7 (hereinafter, slave control loop 7) corresponding to the slave thermocouple 3 according to the slave operation amount.
  • slave control loop 7 hereinafter, slave control loop 7
  • the main subtractor 11 becomes the main thermocouple 3
  • This target steady-state temperature is subtracted from the detected temperature of, and the main deviation temperature is output.
  • the main PID operation circuit 12 outputs the main operation amount based on the PID control operation so that the main deviation temperature converges to 0, and the main control circuit 13 controls the energization of the main control loop 7 according to the main operation amount. I do.
  • the main control circuit 13 performs energization control such that, for example, when the temperature rises (the main deviation temperature is minus), the energization time increases as the value of the main operation amount increases, and when the temperature decreases (the main deviation amount decreases). If the deviation temperature is positive, energization control should be performed so that the energization time is shortened as the value of the main operation amount increases.
  • each slave PID operation circuit 15 outputs a slave operation amount based on the PID control calculation so that the slave deviation temperature converges to 0, and each slave control circuit 16 controls the energization control of the slave control loop 7. I do.
  • energization control when the slave deviation temperature is negative, energization control is performed such that the larger the value is, the longer the energization time is, and when the slave deviation temperature is positive. In this case, energization control may be performed such that the larger the value is, the shorter the energization time is.
  • the detected temperature of the main control loop 7 detected by the main thermocouple 3 rises, the detected temperatures of all the sub thermocouples 3, 3
  • the detected temperatures of all the slave thermocouples 3, ⁇ 3 also fall, and the temperature inside the constant temperature chamber 1 decreases.
  • the temperature is controlled to the target steady-state temperature while maintaining the temperature difference below a certain level, and is controlled so that the whole converges to the target steady-state temperature.
  • the temperature of the wafer 2 can be suitably controlled in a process of manufacturing a semiconductor element such as a CCD sensor.
  • FIG. 7 is a view for explaining a method of selecting a main control loop in the first embodiment of the present invention.
  • FIG. in the figure (a) is the waveform of the target control temperature, and (b) is the waveform of each thermocouple 3,..., 3 when the target control temperature is input to all the control loops 7,. It is a detected temperature waveform.
  • (1) to (4) are the detected temperature waveforms of each thermocouple 3. If the detected temperature change of each control loop 7 results in the result as shown in FIG. 3B, the temperature change is the slowest, that is, the thermocouple 3 having a large time constant is used. Is selected as the main control loop.
  • FIG. 3B the detected temperature waveform of each thermocouple 3.
  • thermocouples 3 shows the detected temperature waveforms of all the thermocouples 3,..., 3 when the above-described temperature control is performed based on the selection of the main control loop. Then, it is possible to stabilize the target steady-state temperature while keeping the detected temperatures of all the thermocouples 3,.
  • the horizontal axis is the elapsed time
  • the vertical axis in (a) is the value of the target control temperature
  • the vertical axes in (b) and (c) are the detected temperatures.
  • FIG. 8 is a system configuration diagram showing a PID control system according to Embodiment 2 of the present invention.
  • 17 is a target steady-state memory (target steady-state memory) in which a target steady-state temperature is set for each slave subtracter 14, and 18 is the detected temperature of the main thermocouple 3 and
  • This is a reference value selector (first selector) that selects one of the target steady-state temperatures of the target steady-state temperature memory 17 and outputs it to the subtraction value input of each slave subtracter 14.
  • Other configurations are the same as those in the first embodiment, and a description thereof will not be repeated.
  • each slave subtracter 14 subtracts this detection temperature from the detection temperature of the slave thermocouple 3 and outputs it as the slave deviation temperature.
  • each reference value selector 1 When 8 selects the target steady-state temperature of each target steady-state temperature memory 17, each slave subtracter 14 subtracts the target steady-state temperature from the detected temperature of the slave thermocouple 3, and outputs the result as a slave deviation temperature.
  • Other operations are the same as those in the first embodiment, and a description thereof will not be repeated.
  • each slave control loop 7 can be operated based on a different target steady-state temperature in this way, each slave control loop 7 is controlled in the same manner based on the detected temperature of the main thermocouple 3.
  • FIG. 9 is an explanatory diagram showing an example of temperature control according to Embodiment 2 of the present invention.
  • (a) is the waveform of the target control temperature
  • (b) is the detected temperature waveform of all samples 3, 3,. 1 to 4 are the detected temperature waveforms of each thermocouple 3.
  • FIG. 10 is an explanatory diagram showing another example of the temperature control according to the second embodiment of the present invention.
  • (a) shows the waveform of the target control temperature
  • (b) and (c) show the detected temperature waveforms of all the thermocouples 3. 1 to ⁇ ⁇ are the detected temperature waveforms of each thermocouple 3.
  • each slave control loop 7 is always controlled based on the detected temperature of the main thermocouple 3 as shown in FIG. If the oscillation continues after the normal temperature has been reached, the detected temperature of each slave thermocouple 3 will also oscillate in a state delayed from that, and in some cases, oscillation may occur. After the detected temperature of each thermocouple 3 reaches the target steady-state temperature as shown in Fig.
  • the reference value selection 18 is selected from the detected temperature of the main thermocouple 3 based on the target temperature.
  • the target steady-state temperature of the steady-state temperature memory 17 By switching to the target steady-state temperature of the steady-state temperature memory 17, the temperature of each zone where each slave thermocouple is located can be stabilized at the target steady-state temperature, and oscillation due to response delay etc. can be prevented. effective.
  • each slave control loop 7 is operated based on its target steady-state temperature to reach the target steady-state temperature early, and when the temperature becomes close to the target steady-state temperature, each slave control loop 7 is controlled.
  • the control loop 7 is switched to the detected temperature reference of the main thermocouple 3, there is an effect that the target steady-state temperature can be stabilized early.
  • FIG. 11 is a system configuration diagram showing a PID control system according to Embodiment 3 of the present invention.
  • 19 is an offset temperature memory in which an offset value is set
  • 20 is a reference value selector
  • 18 is an adder that adds this offset value to the output value of the reference value selector 18.
  • This is an offset selector that selects one of the added value of the adder 20 and the output value of the reference value selector 18 and outputs it as a subtraction value to the slave subtractor 14.
  • the other configuration is the same as that of the second embodiment, and the description is omitted.
  • the adder 20 adds the offset value set in the offset temperature memory 19 to the output value of the reference value selector 18.
  • the offset selector 21 selects one of the addition value of the adder 20 and the output value of the reference value selector 18.
  • the selected value is output to the slave subtractor 14 as a subtraction value.
  • the slave subtracter 14 outputs a slave deviation temperature obtained by subtracting the subtraction value from the detection temperature of the slave thermocouple 3. Accordingly, the slave subtractor 14 has a predetermined offset value to the detected temperature of the main thermocouple 3, a temperature obtained by adding a predetermined offset value to the detected temperature of the main thermocouple 3, a target offset temperature, and a predetermined offset to the target steady temperature. You can select and enter one of the added temperatures. Other operations are the same as those in the second embodiment, and a description thereof will not be repeated.
  • each slave control loop 7 can be operated in a state in which the offset value is considered in this manner, each slave control loop 7 can be controlled in the same manner based on the detected temperature of the main thermocouple 3.
  • the control can be performed while maintaining a constant temperature difference based on the offset value of the offset temperature memory 19, or by setting the response delay of the slave control system as the offset value. It is also possible to effectively suppress the oscillation of the slave control system by canceling the delay that actually occurs.
  • FIG. 12 is an explanatory diagram showing an example of temperature control according to Embodiment 3 of the present invention.
  • (a) shows the target control temperature waveform
  • (b) shows the detected temperature waveforms of all the thermocouples 3,. 1 to 4 are the detected temperature waveforms of each thermocouple 3.
  • a constant temperature difference is maintained by switching the selection of the offset selector 21 from the output value of the reference value selector 18 to the addition value of the adder 20 in the middle of the temperature control cycle. It can be controlled in the state where it was done.
  • FIG. 13 is a block diagram showing a configuration of a PID control unit 4 according to Embodiment 4 of the present invention.
  • 22 is an input terminal to which the detected temperature from thermocouple 3 etc. is input
  • 23 is all target steady state. Temperature memory 10, 17, 17, and all input terminals 22,
  • Reference value selector (second selector) that is connected to-, 22 and switches between the subtraction input source of each subtractor 11 and the input source of each adder 20 arbitrarily between them according to the setting by a program or the like. It is.
  • the other configuration is the same as that of the third embodiment, and the description is omitted.
  • the reference value selector 23 is used to store all target steady-state temperature memories 10, 17, 17, and 17 and all input terminals 22,. Are selected one by one and output to each subtracter 10 (14) as its subtraction value. Then, each adder 20 adds the value of the corresponding offset temperature memory 19 to this output, and each subtracter 11 (14) is input from the corresponding input terminal 22. This subtraction value is subtracted from the detected temperature of thermocouple 3 and output to each PID control circuit. Other operations are the same as those in the third embodiment, and a description thereof will not be repeated.
  • the subtraction value input to the subtractor 14 in this manner is divided into the plurality of target steady-state temperature memories 10, 17,..., 17 and the plurality of input terminals 22,.
  • the PID calculation circuits 12 and 15 can be operated appropriately based on the selection, and the respective PID calculation circuits 12 and 15 can be controlled in association with each other or individually. By operating these in combination as appropriate, there is an effect that a very convenient system can be obtained without adding a new configuration separately. For example, as the target steady-state temperature of the slave PID control circuit 15, the set temperature of the target steady-state temperature memory 17 associated with the slave PID control circuit 15, or the detection value of another arbitrarily specifiable PID control circuit It is possible to select and use.
  • the main control loop 7 is initially controlled based on this, and the other slave control loops 7 correspond to this main control loop 7.
  • the control is performed based on the detected temperature of the main thermocouple 3 and when it is in a stable state, all the control loops 7 are controlled based on the target steady-state temperature in the target steady-state temperature memory 10 described above.
  • the embodiment of the present invention has been described using a PID control system including PID operation circuits 12 and 15 as an example.
  • the PID operation circuits 12 and 15 are controlled by IMC control.
  • An IMC control system can be created simply by replacing the circuit. It goes without saying that even with this IMC control system, control can be performed so that the detected temperature converges to the target steady-state temperature.
  • the case where the temperature of the wafer is suitably controlled in the process of manufacturing a semiconductor device such as a CCD sensor has been described as an example.
  • the detection value for detecting the state of the control target is the target steady-state value. Needless to say, any method can be applied as long as the control is performed so as to converge to.
  • Embodiment 5 any method can be applied as long as the control is performed so as to converge to.
  • FIG. 14 is a system configuration diagram showing a PID control system according to Embodiment 5 of the present invention.
  • 41 is a constant temperature room
  • 42 is a wafer for a CCD sensor installed in the constant temperature room 41
  • 43 is the center of the constant temperature room 41.
  • 44 is a PID control unit for performing predetermined control using the detected temperature of the thermocouple 43
  • 45 is a wafer for each.
  • the heaters (control means) arranged in the vicinity of, 46 are the power supplies (control means) provided for each heater 45, and 47 are the power supplies 4 5 and the power supply 4 6, respectively.
  • a control loop (control means) for connecting the PID control unit 44 in series with the PID control unit 44, 48 is a vent provided in the constant temperature room 41, and 49 is a fan installed inside the vent 48. is there
  • 50 is a target steady-state memory in which the target steady-state temperature is set, 51 is a subtraction that subtracts the target steady-state temperature from the detected temperature of the thermocouple 43 and outputs a deviation temperature.
  • Container (arithmetic means) 5
  • PID calculation circuit for outputting a first manipulated variable based on the PID control calculation so that the deviation temperature converges to 0, and 53 is a predetermined PID calculation circuit preset to the first manipulated variable.
  • Multiplying means for multiplying the ratio coefficient value of the second operation amount to output a second operation amount, and 54 each receiving the second operation amount and energizing control of each control loop 47 in accordance with the second operation amount Control circuit
  • Control means and 55 are provided with a numeric keypad, and a numerical input circuit (ratio) for setting a numerical value input from the numeric keypad as a ratio coefficient value to the plurality of multiplying means 53,..., 53. Coefficient input means).
  • FIG. 15 is a flowchart showing a processing procedure up to setting of a ratio coefficient according to Embodiment 5 of the present invention.
  • step ST 1 is an initial setting step in which the ratio coefficient “1” is set as an initial value in all multiplying means 53,..., 53, and step ST 2 is desired in target steady-state temperature memory 50.
  • Step ST3 for setting the target steady-state temperature (for example, 100 degrees) for the target steady-state temperature.
  • Start step, Step ST4 is a sampling step for measuring the detected temperature of the thermocouple 43, and Step ST5 is whether the detected temperature of the thermocouple 43 has stabilized at the target steady-state temperature based on the difference between this detected temperature and the target steady-state temperature.
  • Step ST6 measures the vicinity of each heater 45 (for example, the temperature at the position indicated by “*” in Fig. 14) with the detected temperature stabilized at the target steady-state temperature.
  • Step ST7 is a step for calculating a ratio coefficient according to the deviation of the temperature of each zone from the target steady-state temperature.
  • Step ST8 is a step for calculating each ratio coefficient to each multiplication means 53.
  • the temperature is controlled under the setting of the new ratio coefficient combination, and the vicinity of each heater 45 at that time is controlled.
  • Temperature deviation is setting confirmation decision step of determining whether the lower tolerance than.
  • the ratio coefficient can be calculated as “0.8” based on the following equations 1 and 2.
  • the ratio coefficient calculated by the processing of Equation 2 or higher is input from the numerical value input circuit 55 to each multiplication means 53.
  • the specified wafer 42 is actually installed in the constant temperature chamber 41, and in that state, the temperature control program is operated above the PID control unit 44, and the temperature set by the program is set as the target steady temperature and the target steady temperature is set.
  • the temperature is set in the temperature memory 50, and the temperature is changed if necessary, and the temperature of the wafer 42 is managed and controlled.
  • target steady-state temperature memory 5 When the target steady-state temperature is set to 0, the subtractor 51 subtracts this target steady-state temperature from the current detected temperature of the thermocouple 4 3, and the PID calculation circuit 52 sets the deviation temperature to converge to 0.
  • the first manipulated variable based on the PID control calculation is output to each of the multiplying means 53, and each multiplication means 53 multiplies the first manipulated variable by the ratio coefficient set thereto and outputs a second manipulated variable.
  • the circuit 54 controls the energization of each control loop 47 according to the second manipulated variable.
  • This energization control is controlled, for example, to increase the on-time (duty) per unit time as the magnitude of the second manipulated variable increases when the temperature rises, and to increase the second manipulated variable when the temperature falls.
  • the ON time (duty) per unit time should be controlled to decrease as the value increases.
  • the temperature of each zone can be raised to the target steady-state temperature by, for example, a similar temperature raising carp. Since the target steady-state temperature can be stabilized in a state where no occurrence occurs, the occurrence of overshoot and undershoot after reaching the target steady-state temperature can be effectively suppressed. Then, even if disturbance is caused by the fan 49 or the like, there is an effect that the temperature of the wafer 42 can be suitably controlled in the process of manufacturing the semiconductor element 42 such as a CCD sensor.
  • FIG. 16 shows a PID control system according to Embodiment 6 of the present invention. It is a system configuration diagram.
  • reference numeral 56 denotes a numerical value input circuit (ratio coefficient setting means) for setting a ratio coefficient value for each multiplying means 53 in accordance with an input
  • 57 denotes a numerical value input circuit which is disposed in the vicinity of each of the multipliers 5.
  • the thermocouples (detection temperature input means), 58 are input with the detected temperatures of the plurality of thermocouples 57, 57, 57, etc., and multiply each by using the detected temperature of each thermocouple 57.
  • the other configuration is the same as that of the fifth embodiment, and the description is omitted. Next, the operation will be described.
  • the measuring circuit 58 calculates the ratio coefficients to be set for all the multiplying means 53, 53 by executing the flow chart shown in FIG. 15 and calculates this by using the numerical value input circuit 56. Set in each multiplication means 53. Other operations are the same as in the fifth embodiment, and a description thereof will not be repeated.
  • Embodiment 7 By providing the measurement circuit 58 in the PID control unit 44 and automating the process from measurement to setting, the setting operator can perform the measurement process under the use environment compared to the first embodiment. If you only perform the settings, it is possible to make optimal settings in that environment, and it will be very convenient.
  • Embodiment 7
  • FIG. 17 is a block diagram showing a configuration of a PID control unit 44 according to Embodiment 7 of the present invention.
  • the PID control unit 44 has the same number (four in FIG. 4) of the target steady-state temperature memory 50, the subtracter 51, and the PID operation circuit 52 as the control circuit 54.
  • reference numeral 59 denotes a subtraction input source of each subtractor 51, which is stored in a plurality of target steady-state temperature memories 50,.
  • a first switching circuit for arbitrarily switching between, 60 is an input terminal to which a detected temperature from a thermocouple or the like is input, and 61 is a plurality of input terminals 60 0 for an addition input source of each subtracter 51.
  • each multiplication means 53 arbitrarily switches the input source of each multiplication means 53 among a plurality of PID operation circuits 52,.
  • a third switching circuit (first selector) 63, and a fourth switching circuit (second selector) arbitrarily switching the input source of each control circuit 54 between the multiplying means 53 and the third switching circuit 62.
  • Numerical input circuit 56 sets the calculated ratio coefficients for all multiplication means 53, 53, 53 using numerical input circuit 56, and switches these four switching circuits 5 according to the temperature control program. It is the control main unit that performs switching settings of 9, 61, 62, and 63.
  • the other configuration is the same as that of the second embodiment, and the description is omitted.
  • the target steady-state temperatures of different target steady-state temperature memories 50,. , And the target steady-state temperature of the common target steady-state temperature memory 50 can be input to all the subtractors 51,..., 51.
  • a different detection temperature can be input to each subtractor 51, or a common detection temperature can be set to all the subtracters 51,. Can be entered. Therefore, in each subtracter 51, a common target steady-state temperature can be subtracted from a common detected temperature, or different target steady-state temperatures can be subtracted from different detected temperatures.
  • the multiplying means 53 multiplies a common first manipulated variable by a ratio coefficient to output a second manipulated variable, or multiplies a separate first manipulated variable by each ratio coefficient. To output the second manipulated variable can do.
  • the fourth switching circuit 63 by switching the fourth switching circuit 63 by the control body 64, the output (third manipulated variable) of the multiplying means 53 is input to each control circuit 54, and the third switching circuit 62 Output (second manipulated variable) can be input. Therefore, common control can be performed in each control circuit 54 or separate control can be performed.
  • all control circuits 5 4 are controlled based on the output of one PID operation circuit 52 based on one detected temperature.
  • each control circuit 54 can be operated based on the output of a separate PID operation circuit 52.
  • each control means 54 since the input source of each control means 54 is switched between the PID operation circuit 52 (third switching circuit 62) and the multiplication means 53, for example, a ratio coefficient value is newly set. Measurement can be performed without correcting the value set in the multiplication means 53 to 1 each time. As a result, it is possible to measure a new ratio coefficient without being conscious of the multiplying means 53 one by one and to keep the previous value, which is very convenient at the time of initial setting or setting change. There is an effect that the system can be rich. Further, the outputs of the plurality of PID operation circuits 52,..., 52 can be input to a plurality of multiplication means 53,..., 53, respectively. The temperature can be controlled for each group consisting of multiple zones. Embodiment 8
  • FIG. 18 is a system configuration diagram showing a PID control system according to Embodiment 8 of the present invention.
  • reference numeral 65 denotes offset adding means for adding an offset value to the second manipulated variable output from each of the multiplying means 53 and outputting the result as a third manipulated variable.
  • An operation mode switching means for receiving a mode setting signal or the like and outputting the third manipulated variable or the like to the control circuit 54 according to the operation mode, 67 is, for example, 100% to 2%.
  • An offset value in the range of 0% is input by a key operation of the control device or the like, and the offset value input means for setting the offset value in the plurality of offset adding means 65, 65, 65, 6 8 is a selection input of one of the manual mode and the auto mode, and a selection input of one of the ready mode and the run mode.
  • One of the modes Mode selection means that outputs information on the operation mode as an operation mode setting signal.
  • Reference numeral 69 designates a manipulated variable to be used in the ready mode, and this is output to the operation mode switching means 6 6, 6.
  • the manipulated variable setting means 70 is a manual manipulated variable setting means for setting the manipulated variable to be used in the manual mode and outputting the manipulated variable to the operation mode switching means 66, 66, 66.
  • the operation mode switching unit 66 controls the operation amount input from the manual operation amount setting unit 70 to each of them. Output to circuit 54
  • the operation amount input from the manual operation amount setting means 70 is output to the control circuit 54 of the operation mode, and the operation mode is output.
  • the “Auto mode X ready mode” is input as the setting signal
  • the operation amount input from the operation amount setting means 69 at ready is output to the control circuit 54 of each, and the operation mode is set.
  • the “auto mode X run mode” is input as a signal, the third manipulated variable is output to the control circuit 54 of each.
  • the other configuration is the same as that of the fifth embodiment, and the description is omitted.
  • each operation mode switching means 66 selects one of the operation amount of the S operation amount, manual operation amount setting means 70 operation amount, and ready operation amount setting means 69. And outputs this to each control circuit 54.
  • the embodiment of the present invention has been described by taking as an example a PID control system including a PID operation circuit 52.
  • the PID operation circuit 52 is simply replaced with an IMC control circuit. It can be. And, needless to say, even with this IMC control system, control can be performed so that the detected temperature converges to the target steady-state temperature.
  • the case where the temperature of the wafer is suitably controlled in the process of manufacturing a semiconductor element such as a CCD sensor has been described as an example.
  • the present invention is based on the detection value obtained by detecting the state of the control target. ⁇ ⁇ ⁇ It goes without saying that any method can be applied as long as control is performed so as to converge to a steady value.
  • FIG. 19 is a system configuration diagram showing a PID control system according to Embodiment 9 of the present invention.
  • 8 1 is a controlled object such as a constant temperature room
  • 8 2 is a controlled object 8 1, respectively
  • 8 3 is a heater power supply (operating means) arranged inside the 8 1.
  • 8 1 is a controlled object such as a constant temperature room
  • 8 2 is a controlled object 8 1
  • 8 3 is a heater power supply (operating means) arranged inside the 8 1.
  • These is located in the vicinity of each heat sink 82, respectively, and a thermocouple (detection means) that detects the temperature state of the controlled object 81, and 85 is the temperature detected by the two thermocouples 84.
  • This is a PID control unit that controls the energization of the above two heaters.
  • reference numeral 86 denotes an operation circuit (operation means) in which the heater 82 and the power supply 83 are connected in series, and 87 designates an operation circuit 82, respectively.
  • An energization control loop (operating means) connected to the pump and 88 is a target steady-state temperature storage circuit (control means) for storing the target steady-state temperature.
  • thermocouple 84 4, 89, 90, 86, 87, 87 2) is the first control loop, and the control path (84, 84) from the thermocouple 84 shown in the lower part of FIG.
  • 89 is a first subtractor (control means) for subtracting the target steady-state temperature from the first detected temperature and outputting this as a first control deviation.
  • 90 is a PID control based on this first control deviation.
  • This is a first PID operation circuit (control means) which performs an operation and outputs the operation result to the first operation circuit 86 as a first operation amount.
  • 91 is a detected temperature subtracter (control means) for subtracting the second detected temperature from the first detected temperature and outputting this value as a detected temperature deviation
  • 92 is a filter for detecting the detected temperature deviation.
  • a filter circuit for performing a ring process and outputting a fill detected temperature deviation, and a second adder for generating a second target temperature (adding the fill detected temperature deviation to the first detected temperature)
  • the control means 94 subtracts this addition value from the second detected temperature, and outputs a second control deviation as a second subtractor (control means).
  • a second PID calculation circuit (control means) that performs PID control calculation based on the calculation result and outputs the calculation result to the second operation circuit 86 as a second operation amount.
  • the first subtractor 89 becomes stable. From the first detected temperature The first steady-state temperature is subtracted, the first PID operation circuit 90 performs PID control operation based on the first control deviation, and the first operation circuit 86 operates based on the first operation amount. The energization control of the energization control loop 87 is performed.
  • the second control deviation output from the second subtractor 94 is "0", so the second control loop Is not controlled.
  • the first subtractor 89 subtracts the target steady-state temperature from the first detected temperature
  • One control loop performs energization control based on the new first control deviation.
  • the second control loop since only the first heater 2 is energized, a temperature gradient is generated inside the controlled object 8 1 and a difference is generated between the first detected temperature and the second detected temperature. Therefore, the detected temperature subtractor 91 subtracts the second detected temperature from the first detected temperature, and the filter circuit 92 performs a filtering process on the detected temperature deviation to generate the second target temperature.
  • the adder 93 adds the filtered detected temperature deviation to the first detected temperature, the second subtractor 94 subtracts the added value from the second detected temperature, and the second PID operation circuit 95 performs PID control calculation based on the second control deviation, and the operation circuit 86 performs energization control based on the second operation amount.
  • FIG. 9 is an explanatory diagram showing temperature characteristics when both the addition value input to the first subtractor 89 and the addition value input to the second subtractor 94 in the PID control system shown in FIG.
  • the horizontal axis of the figure (a) is the time
  • the vertical axis is the target steady-state temperature
  • the horizontal axis of the figure (b) is the time
  • the vertical axis is the detected temperature
  • 96 is the first control loop and the second control loop.
  • the temperature curve of the target steady-state temperature commonly set 97 is the temperature curve of the first detected temperature
  • 98 is the temperature curve of the second detected temperature.
  • the time constant of the temperature curve (the time required for the detected value to rise to about 60% of the set value) in Fig. 20 (b) almost coincides with the derivative in PID control.
  • the time constant is used as a differential coefficient.
  • the value of the above equation 1 into which the detected value deviation of the second detected temperature with respect to the first detected temperature is substituted is added to the individual target value (first detected temperature) of the second control loop. Therefore, even if a temperature change delay of the second detection temperature with respect to the first detection temperature occurs, the remaining power of the second control loop, which can be controlled by the time constant D 2 ( ⁇ D 1), is originally obtained. Can be used to eliminate it.
  • the value of the above equation 1 increases as the delay accumulates as shown in the above equation 1, so that the temperature change delay can be reliably eliminated. it can.
  • the temperature change curve of the second control loop does not come above the temperature change curve of the first control loop, and the temperature change delay can be preferably eliminated.
  • FIG. 21 is an explanatory diagram showing a temperature control effect of the PID control system according to Embodiment 9 of the present invention.
  • FIG. 12A shows a temperature curve of the first detected temperature and a temperature curve of the second detected temperature when the target steady-state temperature is input as a subtraction value to the second subtractor 94.
  • Figure (b) shows the temperature curve of the first detected temperature and the temperature curve of the second detected temperature when the first detected temperature is input to the second subtractor 94 as a subtraction value.
  • FIG. 14C shows a temperature curve of the first detected temperature when the output of the second target temperature generating adder 93 is input to the second subtractor 94 as a subtraction value as in the ninth embodiment.
  • 7 shows a temperature curve of a second detected temperature.
  • reference numeral 99 denotes a temperature curve of the output of the second target temperature generating adder 93.
  • the target steady-state temperature is simply input to both the first control loop and the second control loop as the control reference temperature and they are operated independently of each other, the heat control
  • the difference in the time constant caused by heating efficiency etc. appears as the difference in the temperature curve as it is, and if the characteristics such as heating and cooling are not adjusted in advance and the time constant is matched, the temperature rises while maintaining the uniform temperature. Or it cannot be lowered.
  • the first detected temperature is used as the control reference temperature of the second control loop, the temperature rises while the temperature difference between the temperature curves is suppressed to a temperature difference corresponding to a certain delay time.
  • the temperature can be increased or decreased while the temperature of the controlled object is maintained at a substantially uniform temperature.
  • a little extra heating is performed by using the remaining power of the second control loop in accordance with the temperature difference, thereby corresponding to a certain delay time. Since the temperature can be raised or lowered while eliminating the temperature difference, even if the control is such that the temperature changes suddenly, the temperature difference that actually occurs is further reduced, and the temperature rises while keeping the temperature substantially matched Or it can be lowered.
  • the entire controlled object can reach the target temperature almost at the same time, and moreover, the first heater 82 and the second heater 82 can be controlled. Since convection due to the temperature gradient occurring between the evening and 82 does not occur, almost no overshoot and undershoot after reaching the target temperature can be minimized.
  • the entire control target 81 can be stabilized at the target steady-state temperature.
  • two sets of operating means including the heater 82 and the operating circuit 86 for changing the temperature state of the controlled object 81 independently of each other, 8 Thermo cup for detecting temperature condition of 1 PID operation circuits 90, 9 that output manipulated variables to the two operation circuits 86 so that the detected temperature of the control target 81 by the thermocouple 84 converges to the target steady-state temperature.
  • the thermocouple 84 detects the state near the two heaters 82, and the PID operation circuit 90 outputs each operation amount to each operation circuit 86. Since the correction is performed using the detected value deviation of the second detected temperature with respect to the first detected temperature, the detected value deviation between the first detected temperature and the second detected temperature can be eliminated.
  • the two detected temperatures change to the target steady-state temperature with almost the same temperature curve, and for example, the characteristics of the change in the temperature originally varied due to the difference between the heater 82 and the assigned zone.
  • all the regions can reach the final target steady-state value almost simultaneously. Also, occurrence of overshoot and undershoot after reaching the set temperature can be suppressed.
  • the control target is divided into multiple zones and controlled for each zone, the timing to reach the target steady-state temperature is aligned by the original control without relying on a lamp signal generation circuit, etc. It is possible to effectively suppress the occurrence of overshoot / undershoot after reaching the temperature, and to advantageously control the temperature of the wafer in a process of manufacturing a semiconductor device such as a CCD sensor.
  • the target steady-state temperature storage circuit 88 for storing the target steady-state temperature and the control deviation of the detected temperature with respect to the individual target temperature are provided for each of the operation circuits 86.
  • two PID operation circuits 90 and 95 for calculating and outputting the operation amounts for the respective operation circuits 86 using the first PID operation circuit 90. Since the detected value of the reference is given as an individual target value to the second PID operation circuit 95, all the PID operation circuits are simply provided. The occurrence of detection value errors can be suppressed as compared with the case where the target steady-state values are individually set to 90 and 95, and the absolute value of the detection value deviation is further reduced to equalize the detection value of the state. Can be achieved.
  • the first PID calculation circuit 90 corresponding to the reference detection value is provided with the same individual target value for all PID calculation circuits 90 and 95.
  • the PID arithmetic circuit 90 whose state change is the slowest is selected, and the other arithmetic circuit 95 includes the differential control coefficient D2 of the other PID arithmetic circuit 95 and the selected PID arithmetic circuit.
  • the value obtained by adding the value obtained by filtering the detected value deviation using the average value of the differential control coefficient D1 at 90 and the value is input. While performing the control in all the PID calculation circuits 90 and 95 based on the characteristics, the latest PID calculation circuit 95 has better control characteristics than the PID calculation circuit 90. If it occurs, it can be controlled to eliminate it, Field Rakki the detection value can be effectively suppressed.
  • FIG. 22 is a system configuration diagram showing a PID control system according to Embodiment 10 of the present invention.
  • reference numeral 100 denotes a filter circuit (control means) which receives a first control deviation together with a detected temperature deviation, performs a filtering process based on the following equation 5, and outputs a filtered detected temperature deviation.
  • offset is the detected temperature deviation after fill
  • SP 1 is the target steady-state temperature
  • PV 1 is the first detected temperature
  • PV 2 is the second detected temperature
  • fs is the input sampling frequency of the fill circuit
  • filter () is It is a linear filter function.
  • the other configuration is the same as that of the ninth embodiment, and the description is omitted.
  • the temperature of the control target 81 is stable at a specific temperature, for example, room temperature, “SP 1—PV 1” is within 0.5% fs, and “PV 1” is stable.
  • the output of the filter circuit 20 is “0” based on the above equation 2, and the second detected temperature generating adder 93 outputs the first detected temperature itself. Therefore, the second control loop controls the temperature so that the second detected temperature becomes the first detected temperature.
  • the first subtractor 89 subtracts the target steady-state temperature from the first detected temperature, thereby obtaining the first steady-state temperature.
  • This control loop performs control until the difference between the first detected temperature and the target steady-state temperature disappears, that is, the first detected temperature becomes the target steady-state temperature.
  • the filter circuit 100 sets the first detection temperature to the first detection temperature. Using the temperature difference between the two detected temperatures, a fill detected temperature deviation based on Equation 3 above is output. If the “PV 1—PV 2” is large, The larger the value, the larger the value of “SP 1—PV 1”, the larger the value. The larger the difference between the set target steady-state temperature and the current temperature, the larger the difference.
  • the second target temperature is set.
  • the first detection temperature itself is output again from the temperature generation adder 93.
  • Other operations are the same as in the first embodiment, and a description thereof will not be repeated.
  • the PID operation circuits 90 and 95 are used as control means.
  • similar effects can be obtained by using an IMC operation circuit.
  • the detected value deviation between the first detected temperature and the second detected temperature is filtered, and the filtered output is added to the reference first detected temperature. Even if the difference between the first detected temperature and the second detected temperature is directly added to the first detected temperature, substantially the same effect can be obtained.
  • Embodiment 1 1.
  • FIG. 23 is a configuration diagram of a control system that uses the control device of the present invention to control the temperature to be uniform over the entire wafer to be controlled.
  • 101 is a control device with a PID control function
  • 102 is a thermostat
  • 3 is a wafer placed inside the thermostat 102
  • 104-1 and 104-2 are heaters for controlling the temperature inside the thermostat 102 based on the operation amount from the controller 1.
  • 105-1 and 105-2 are temperature sensors that detect the temperature near the first and second areas 103-3 and 103-3 of wafer 103, and 106 is the wafer Target set value setting means for setting the target temperature of 103, 107-1 and 107-2 are adders, 108 is manipulated variable calculation means, 109 is deviation control means, 110 is It is an adder.
  • the control device 101 is configured to control a target to be controlled, a ch 1 measurement value, which is a temperature measurement value detected by the temperature sensor 105-1 in the first area 103-3 of 103, and a target.
  • the deviation from the set value from the set value setting means 106 is calculated by the first adder 107-1, and the temperature measurement detected by the temperature sensor 105-2 in the second area 103-2
  • the deviation between the measured value of ch 2 as the value and the set value from the target set value setting means 106 is calculated by the first adder 107-7-2.
  • the manipulated variable computing means 108 performs, for example, PID control based on the deviation output from the first adder 107_1 to compute the manipulated variable.
  • the control device 101 sets the calculated manipulated variable as the ch 1 manipulated variable (first manipulated variable), and sets the calculated amount of manipulated data in the first area 104-1, which is arranged in the first area 103-1 Output to
  • the deviation control means 109 performs, for example, PID control based on the deviation output from the second adder 107-2 to calculate the manipulated variable.
  • the adder 110 adds the operation amount calculated by the operation amount calculation means 108 and the operation amount calculated by the deviation control means 109 to obtain the ch2 operation amount (other area operation amount). ) Is output to the heater 104-2 arranged in the second area 103-3-2.
  • the first area 103 The ch 1 manipulated variable output for 1 is the target set temperature and the 1st area 1
  • the control of the first area 103-1-1 is appropriately performed.
  • the ch 2 manipulated variable output to the second area 103-3-2 is the manipulated variable computed by the manipulated variable computing means 108, as described above, There will be a certain deviation in the temperature measurement value in the area 1 0 3—2 of area 2.
  • a deviation control means 109 is provided to eliminate this deviation.
  • the deviation control means 109 calculates and operates by PID control or the like based on the deviation between the target temperature set value and the measured value of ch 2 which is the temperature measured value in the second area 103-3-2. Generate quantity.
  • the adding means 110 adds the operation amount calculated by the deviation control means 109 to the operation amount calculated by the operation amount calculation means 108 to output a ch 2 operation amount. That is, the constant deviation of the temperature measurement value generated in the second area 103_2 can be eliminated by the operation amount calculated by the deviation control means 109.
  • FIG. 24 is a configuration diagram of a control system using the control device of the present invention.
  • 101 is a control device with a PID control function
  • 102 is a thermostat
  • 103 is a wafer placed inside the thermostat
  • 1004-1 is based on the ch1 operation amount.
  • Upper temperature inside the thermostatic bath 102 (first area 103
  • One control to control the lower temperature inside the constant temperature bath 102 (corresponding to the second area 103-2) based on the 012 manipulated variable.
  • 105-1 is a temperature sensor placed near the wafer 103 to detect the upper temperature inside the thermostat 102.
  • 105-2 is a thermostat placed near the wafer 103 A temperature sensor that detects the lower temperature inside 102 can be used.
  • 106 is a target set value setting means for setting the target temperature of the wafer 103
  • 107-1 is a ch 1 measured value of the temperature detected by the temperature sensor 105--1 and a target set value setting means.
  • a first adder that calculates a deviation from the set value set by 106, 1111 is a PID calculation means that performs PID calculation from the deviation calculated by the adder 1107-1 and outputs the manipulated variable ( 1st PID calculation means)
  • 1 1 2 is the manipulated variable limiting means that limits the upper and lower limits on the manipulated variable (1st manipulated variable limiting means)
  • 1 15—1 and 1 15—2 are the manipulated variables a first ratio operation means and a second ratio operation means for performing a ratio operation on b; a first offset operation for performing an offset operation on the manipulated variables c and e;
  • Means and the second offset calculating means, 113 is a branching portion for branching the manipulated variable b from the manipulated variable limiting means 112, and
  • a parameter set by manual operation of a keyboard or the like for setting the night—evening setting means, 110 is the operation amount calculated by the offset calculation means 1 16-2, and the operation limited by the operation amount limiting means 1 18 described later This is an adder that calculates the ch 2 operation amount from the amount h.
  • 1 0 7-2 is a second adder that calculates the deviation from the ch 2 measurement value of the temperature detected by the temperature sensor 10 5-2 and the set value set by the target set value setting means 106.
  • 7 is a PID calculation means (second PID calculation means) that performs PID calculation from the deviation calculated by the second adder 107-2 and outputs the manipulated variable g
  • 1 18 is the upper or lower limit of the manipulated variable g. Operation amount limiting means for restricting (Second manipulated variable limiting means).
  • the control device 101 transmits the measured value of the ch 1 which is the temperature detected by the temperature sensor 105-1 disposed in the first area 103-3-1, and the second area 103-3-2. Input the measured value of ch2, which is the temperature detected by the placed temperature sensor 105--2. Then, a ch 1 manipulated variable and a ch 2 manipulated variable are generated, and a signal of the ch 1 manipulated variable is output to the first 10 4 1-1 arranged in the first area 103-1, and the ch 2 manipulated The signal of the quantity is output to the heater 104- 2 arranged in the second area 103--2.
  • the heater 104_1 controls the temperature of the first region 1033-1 inside the thermostatic bath 102 by, for example, changing the energizing time by the signal of the ch1 operation amount.
  • the heater 104-2 controls the temperature of the second area 103-2 inside the thermostatic bath 102 by using the signal of the ch 2 manipulated variable.
  • the target set value setting means 106 sets a set value that is a desired target temperature for the wafer 103 by inputting a key (not shown).
  • the set target temperature set value is output to the first adder 107-1 and the second adder 107-2.
  • the parameter setting means 1 1 4 includes the operation amount limiting means 1 1 2, the first ratio calculating means 1 1 5-1, the first offset calculating means 1 1 6-1, the second ratio calculating means 1 15-2, the parameters of the second offset calculation means 1 161-2 and the manipulated variable limiting means 1 18 are set by key operation (not shown).
  • the parameters of the manipulated variable limiting means 111 and the manipulated variable limiting means 118 are an upper limit value and a lower limit value, respectively.
  • the parameters of the first ratio calculating means 1 15-1 and the second ratio calculating means 1 15-2 are each ratio values.
  • the parameters of the first offset calculating means 1 16-1 and the second offset calculating means 1 16-2 are each an offset value. The meaning of the parameter will be explained in the explanation of each means.
  • the PID calculation means 111 sets a PID value by inputting a key of a not-shown PID value setting means.
  • the deviation calculated by the first adder 1 07 -1 is input, the PID control calculation is performed to calculate the manipulated variable a, and this manipulated variable a is transmitted to the manipulated variable limiting means 1 1 2 Output.
  • the manipulated variable a usually takes a value of 0% to 100%.
  • the manipulated variable limiting means 1 1 2 limits the upper and lower limits set by the parameter setting means 1 1 4 to the manipulated variable a calculated by the PID calculating means 1 1 1, and the manipulated variable b Is output to the branching units 1 1 and 3. For example, if the upper limit value is set to 80% and the lower limit value is set to 20%, when the manipulated variable a is 90%, it is limited to 80% by the upper limit, and when the manipulated variable a is 10%. Is limited to 20% by the lower limit.
  • the manipulated variable a 50%
  • the branching unit 1 1.3 branches the operation amount b restricted by the operation amount restriction unit 1 12 into a path for generating the ch1 operation amount and a path for generating the ch2 operation amount as it is.
  • the first offset operation means 1 16-1 is a first ratio operation means 1 1
  • the second ratio calculating means 1 1 5-2 multiplies the operation amount b branched by the branching section 1 13 by the ratio value set by the parameter setting means 1 14, and offsets the operation amount e by the operation amount e. Output to 1 1 6—2.
  • the second offset calculating means 1 16—2 is the offset set by the parameter setting unit 114 to the manipulated variable e output by the second ratio calculating means 1 15—2. The values are added, and the manipulated variable f is output to the adder 110.
  • the second adder 107-2 calculates the deviation between the set value which is the target temperature set by the target set value setting means 106 and the measured value of ch2, and calculates the PID calculation means 1 Output to 1 7
  • the PID calculation means 1 17 has a PID value set by a key operation of a PID value setting means (not shown).
  • the deviation calculated by the second adder 1 0 7-2 is input, the PID control calculation is performed to calculate the manipulated variable g, and this manipulated variable g is output to the manipulated variable limiting means 1 18 I do.
  • the manipulated variable g usually takes a value of 0% to 100%.
  • the operation amount limiting means 1 18 is the operation calculated by the PID calculation means 1 17
  • the upper limit and lower limit set by the parameter setting means are applied to the quantity g, and the manipulated variable h is output to the adder 110.
  • FIG. 25 shows a temperature characteristic diagram after the wafer to be controlled is changed to another type of wafer.
  • 13 1 is the target temperature set value set by the target set value setting means 106
  • 13 2 is the temperature sensor 10 5 -1 detected in the first area 10 3 -1
  • the measured temperature value 133 is the measured temperature value detected by the temperature sensor 105-2 in the second area 103-2.
  • the operation amount limiting means 1 1 2 and the operation are performed so that the temperature measurement values 13 2 and 13 3 match the target set temperature.
  • Quantity limiting means 1 18, first ratio calculating means 1 15-1, second ratio calculating means 1 15-2, first offset calculating means 1 16-1, and second ratio calculating means Since the parameters of the offset calculation means 1 16—2 are set, the measured temperature values 13 2 and 13 3 are not equal to the target set temperature, as shown in the temperature characteristic diagram in Fig. 5 (1). And appropriate control is performed. Even if the wafer is changed to another type, as shown in Fig. 25, the temperature measured values 13 2 and 13 3 match the target set temperature, and appropriate control is performed.
  • the first area 103 The ch 1 manipulated variable output for 1 is a value calculated by PID control or the like based on the deviation between the target set temperature and the ch 1 measured value that is the temperature measured value in the first area 103-1 Therefore, the control of the first area 103-1 is appropriately performed.
  • the ch 2 manipulated variable output to the second area 103-3-2 is the manipulated variable: f computed by the PID computing means 111 based on the ch 1 measurement value. Then, a certain deviation occurs in the temperature measurement value of the second area 103-3-2.
  • a second adder 107-2, PID calculating means 117, operation amount limiting means 118, and adder 110 are provided. That is, the deviation control means 109 having the PID calculation means 117 and the second adder 107-2 is operated by the second adder 107-2 to set the target temperature set value and the second area. PID calculation is performed based on the deviation calculated from the ch 2 measurement value, which is the temperature measurement value in 103-2, to generate the manipulated variable h. Then, the adder 110 calculates based on the ch 1 measurement value.
  • the manipulated variable h calculated based on the measured value of ch 2 is added to the manipulated variable f, and the result is output to the user 1044-2 as a ch 2 manipulated variable. That is, the constant deviation of the temperature measurement value generated in the second area 103-3-2 can be eliminated by the manipulated variable h calculated based on the ch2 measurement value.
  • target set value setting means 106 By inputting the set value set in step 2 into the second adder 107--2, the temperature is controlled to be uniform over the entire wafer 103. Instead of the set value, the ch 1 measurement is performed. You may enter a value. By adopting a configuration in which the measured value of ch 1 is input to the second adder 107-2, the temperature characteristic of the second area 103-2 of the wafer 3 becomes the same as that of the first area 103-1. It can follow the temperature characteristics. In other words, it is effective when raising or lowering the temperature of the wafer at a constant gradient.
  • control system and the control device according to the present invention are suitable for uniformly controlling the temperature of a wafer over the whole in a semiconductor process or the like using a plurality of heaters.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Feedback Control In General (AREA)
  • Control Of Temperature (AREA)
  • Control Of Resistance Heating (AREA)

Abstract

L'invention concerne un système de commande et un contrôleur pour réguler correctement la température d'une tranche de silicium dans le cadre du processus de production d'un dispositif à semi-conducteur où la surmodulation et la sous-oscillation peuvent être supprimées efficacement lorsqu'une température stable est atteinte. A cet effet, il est prévu de diviser le système de commande en une pluralité de zones, de commander lesdites zones séparément et que la commande primaire effectue simultanément le chronométrage approprié pour obtenir les températures stables voulues.
PCT/JP2001/008240 2001-01-25 2001-09-21 Systeme de commande et controleur WO2002059700A1 (fr)

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JP2001017480A JP3833479B2 (ja) 2001-01-25 2001-01-25 制御装置
JP2001-17480 2001-01-25

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JP4256236B2 (ja) * 2003-09-04 2009-04-22 株式会社山武 制御装置および制御方法
JP4634197B2 (ja) * 2005-03-25 2011-02-16 株式会社日立国際電気 基板処理装置、半導体装置の製造方法
JP4989455B2 (ja) * 2007-12-28 2012-08-01 アズビル株式会社 制御装置および制御方法
WO2014155951A1 (fr) * 2013-03-29 2014-10-02 三菱電機株式会社 Dispositif de commande de climatisation, système de commande de climatisation et procédé de commande de climatisation
JP6415332B2 (ja) * 2015-01-16 2018-10-31 キヤノン株式会社 温度制御装置、リソグラフィ装置、および物品の製造方法
JP6531605B2 (ja) * 2015-10-07 2019-06-19 オムロン株式会社 温度制御装置およびオートチューニング方法
JP6909921B2 (ja) * 2018-03-26 2021-07-28 日本たばこ産業株式会社 エアロゾル生成装置及び制御方法並びにプログラム

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JPH0665901U (ja) * 1993-02-04 1994-09-16 理化工業株式会社 多点調節計
JPH07200078A (ja) * 1993-12-28 1995-08-04 Komatsu Electron Metals Co Ltd 温度制御装置
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CN106444899B (zh) * 2016-11-16 2018-07-24 中南大学 一种3d打印机温度控制系统

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CN1486452A (zh) 2004-03-31
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JP3833479B2 (ja) 2006-10-11

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