TW502140B - Control system and control device - Google Patents

Abstract

The present invention is provided for controlling the wafer temperature suitably in the production process of a semiconductor device wherein overshoot or undershoot can be suppressed effectively after a desired steady temperature is reached by dividing the controlled system into a plurality of zones, controlling the zones separately, and making the timings of reaching the desired steady temperatures be the same by the primary control.

Description

140 l V. Description of the invention (1) Technical field to which the invention belongs 々 The present invention relates to, for example, the patented PID control (prOptioral Integral and

A control system such as Derivative control (IMC) or IMC (Internal Model Control) control is related to a control system that can be suitably used, for example, when using a plurality of heaters to control the temperature of a 5H wafer to be uniform throughout its entirety. Conventional technology Fig. 1 is a system construction diagram showing the structure of a conventional basic p ID control system. In FIG. 1, 224 is a wafer set in a constant temperature room not shown in the figure, 2 2 5 is a thermocouple that detects the temperature near the wafer 2 2 4 and 2 2 6 is the detection of the thermocouple 2 2 5 After the temperature is input to the target steady-state temperature, the operating device is output to make the detection temperature converge to the target steady-state temperature. The P 2 D computing device is a control device controlled according to the operation amount. The 228 is located near the wafer 224. The heater 229 is a power source, and 230 is a control circuit that connects the heater 228 and the power source 22Θ to the control device 227. The operation will be described next. After setting the target steady-state temperature, the PID computing device 226 outputs an operation amount controlled according to the temperature difference between the detected temperature of the thermocouple 2 2 5 and the target steady-state temperature according to p 丨 β, and the control device 227 controls the heater according to the operation amount. 228 power on time. " Therefore, in this kind of conventional basic! ^!) control system, the temperature of the thermocouple 2 2 5 and its vicinity can be controlled to stabilize the target steady state. Page 4 2103 -4363-PF; ahddub .ptd 140

5. Description of the invention (2) Temperature. y is the area of the wafer 224 to be controlled ..., and the temperature of the wafer 224 is controlled to be uniform as a whole. Therefore, Japanese Unexamined Patent Publication No. 7-96 1 68 discloses that ^ ° The relevant permission p 卩 eight ... 4, the degree of control of dryness! F. ^ 0 knives ° After each zone is individually 1 " 1 D control PID > In f the bulletin, in the case of 7 controls for an individual control object like this' use the same target steady-state temperature The control also reaches the goal because of the differences in the environment of the real area or the positional relationship between the areas. The second sequence varies from area to area. It also discloses the technology of controlling the start sequence and the end sequence of the control in the respective areas. FIG. 2 is a system configuration diagram showing the structure of a conventional Pjl) control system disclosed in Japanese Unexamined Patent Publication No. 7-96 丨 68. In Fig. 2, 231 is a process controller for setting the temperature according to the existing formula, 232 is a ramp signal generating circuit that outputs the set temperature as the final temperature, and 233 is the slope wave opening ^ as the target steady-state temperature input 、 The p ID controller '234 output after calculating the operation amount is 234, which uses the PID controller 233 to control the temperature of the furnace, 235 is a complex, the temperature sensor in the furnace, 236 is the initial setting memory for setting the reference temperature for comparison, 2 3 7 Series time difference measurement circuit that measures the temperature sensor in each furnace 2 3 5 and outputs the time difference after the time when the detected temperature and the reference temperature of the comparison match, 238 Series memory controls the ramp signal generation circuit 232 according to the time difference Time difference table memory for generating timing data of the ramp signal. The operation will be described next. In the state where the reference temperature for comparison is set in the memory 236, the self-made program controller 2 3 1 outputs the set temperature, and the ramp signal generating circuit 2 3 2 generates the ramp.

2103-4363-PF; ahddub.ptd Page 5 140 V. Description of the invention (3) The waveform is input as the target steady-state temperature, and the output is calculated. The temperature of the furnace 234 changes toward the set temperature. Among the temperature changes, 'When the detection temperature of the temperature sensor 235 in each furnace matches the reference temperature of the comparison', the time difference measurement circuit 237 measures the respective time points, and outputs the time to the table memory 238. Time difference. Time difference table memory ㈣ selection: after eliminating the time difference table, input to the ramp signal generation circuit 2 to output the second, after the self-made process controller 231 outputs the set temperature, the ramp signal generation circuit 232 adjusts the output timing of the ramp waveform only. The time set by the time difference table memory 238 is used. Then, the temperature of the furnace 234 is controlled to a set temperature in accordance with the ramp waveform. Therefore, multiple types can be performed for one furnace 234? 11) Control and control its temperature, and theoretically, it can make the timing of reaching the target steady-state temperature consistent. Fig. 3 shows the structure of the control system without using the conventional control device. Fig. 3 2 6 1 is a control device that includes the p I d control function. 2 μ is a thermostat. 263 is a crystal placed inside the thermostat. Circle, 264 is a heater that controls the temperature inside the thermostatic bath 262 according to the operation amount from the control device 261, and 265 is a temperature sensor that detects the temperature near the wafer 263. The operation will be described next. The control device 261 including the PID control function inputs the temperature measurement value detected by the temperature sensor 265 @, and performs calculations using the control function to make the measurement value consistent with the preset purpose and temperature setting value. In the calculation operation. Then, the operation amount is output to the heater 2 6 4. The heater 2 6 4 controls the inside of the thermostatic bath 262 by changing, for example, the energization time according to the operation amount. 2103-4363-PF; ahddub.p t d

2140 V. Description of the invention (4) / Lido. In this way, the control is performed so that the temperature of the wafer 263 is consistent with the preset target temperature. However, it is difficult to control the temperature of the wafer 263 to be uniform throughout the wafer 263 because the area of the wafer 263 to be controlled is large. In this case, after dividing the wafer to be controlled 263 into a plurality of regions, the above-mentioned control device 261 including the PID control function is used for each of these regions f. Because by setting the temperature sensor 265 and the heater 264 separately for each divided area, the P and D control can be performed to make the temperature in each area consistent with the preset target temperature. However, this control method has a problem in that proper control cannot be performed due to temperature interference between the regions. That is, when the temperature in a certain area is controlled by the heater control in that area, the temperature in that area is affected by the heaters in other areas, and proper control cannot be performed. To solve this problem, the control system shown in FIG. 4 is generally used. In FIG. 4 ′ 271 is a control device including PID control function, 272 is a constant temperature tank, 273 is a wafer arranged inside the constant temperature tank 272, and 274-1 is the first to control the inside of the constant temperature tank 272 according to the operation amount of Chl. The heater 274-2 of the temperature in the area 273-1 is a heater that controls the temperature of the second area 273-2 inside the thermostatic bath 272 in accordance with the operation amount of Ch2. The 275 is a temperature sensor that detects the temperature near the wafer 273. Detector, 281 is a target set value setting device for setting the target temperature of the wafer 273, and 282 is a temperature measurement value detected from the temperature sensor 275 and calculates a deviation using the set value set by the target set value setting device 28 1 The adder, 283 is a PID operation device that outputs the operation amount after performing PID calculation on the deviation calculated by the adder 282, and 284 is a limit on the operation amount.

2103 -4363-PF; ahddub.ptd page 7 ^) 2140 ---------------— _ 'V. Description of the invention ⑸ ^ ~ 一 ------ Limit and Lower limit operation amount limiting device, 285— 丨 and 285-2 are the first ratio calculation device and the second ratio calculation device in the first ratio calculation device, 286-1- and 286-2 are used to offset the operation value. The first offset calculation device and the second offset calculation device, 287 will branch from the operation amount limiter 284 ^ m, and 288 set the operation amount limiter 28! For example, the parameters to find Keyboard and other parameter setting devices using manual operation. The operation will be described next. The control device 2 71 inputs the temperature measurement value detected by the temperature sensor 2 7 5 according to the set value of the target temperature set by the target set value setting device 281, calculates the deviation with the adder 282, and calculates it with piD. Place the dish 28 3 and perform the pid calculation to determine the operation amount. Then, after the upper limit and lower limit of the operation amount are restricted by the operation amount limit 2 84, branching is performed by the branch portion 28 ?. The branched operation amount is converted into a Chl operation amount by the first ratio calculation device and the first offset calculation device 286.1. Similarly, the branched operation amount becomes the ch2 operation amount through the second ratio calculation device 285-2 and the second offset calculation device ', 286-2. The chl operation amount is output to the heater 274-1, and the heater 274-1 controls the temperature of the first region 273-1 inside the thermostatic bath /? 2 by changing, for example, the energization time according to the chl operation amount. Also, the same Ch2 operation amount is output to the heater 274-2, and the heater 274-2 controls the temperature of the second domain 273-2 inside the thermostatic bath 272 by changing, for example, the power-on time according to the ch2 operation amount. . ”In this case, use a key input operation not shown in the figure to set the parameter in the parameter setting device 2 8 8 during the adjustment in advance. 2 8 $, the first ratio

) 2140 V. Description of the invention (6) Parameters of the calculation device 285-1, the second ratio calculation device 285-2, the first offset calculation device 286-1, and the second offset calculation device 2 86-2, so that the wafer The temperature of 2 7 3 is consistent with the target temperature. In this way, the heater 274-1 disposed in the first region 273_1 and the heater 274-2 disposed in the second region 2 73-2 are controlled so that the temperature of the respective regions is consistent with the preset target temperature. That is, it is controlled so that the temperature of the entire wafer 273 is consistent with a preset target temperature. Because the other PID control systems are structured as shown above, theoretically, the timings for consistently reaching the target steady-state temperature are consistent, but only the start timing (end timing) of each PID control is changed, as shown in Figure 4. If there is no additional ramp generating circuit that continuously changes the target steady-state temperature itself to the final target 度 w degree, it is difficult to make the timing consistent, and that :: The coefficient of p ID control is set so as not to overshoot. The problem of overshoot or undershoot also occurs after reaching the target steady-state temperature. However, in the case of overshooting or undershooting, it is possible to stabilize the detection temperature at the target steady state temperature. That is, in this conventional PID control system, the time difference between the timings of reaching any comparative reference temperature during the heating period when the same target steady-state temperature is set for all PID controls is changed as the timing to offset the time i. . Moreover, this is to use this ramp signal generating circuit with each piD according to the same temperature rise curve to the target steady state temperature). However, there are differences in g = (thus the difference in heat conversion efficiency of the heater and the environment in each area). In fact, generally, the heating temperature of each PID control is different:

^ 02140 V. Description of the invention (7) (that is, the time constants of the PID controls are generally different). In the case where the final target steady-state temperature is directly input to each p 丨 D control, it is controlled so that the reference temperature for the comparison is reached. The timing is the same, and because the method of temperature change during the heating period varies from zone to zone, the heat exchange caused by the temperature gradient occurs in each zone. Therefore, the time sequence of each zone becoming the desired set temperature becomes different, and it reaches the set time. Over temperature or down temperature occurs after temperature. In addition, in the above description, a PID control system is taken as an example to explain the above-mentioned problems, but in addition, the same lesson also occurs in Mc control systems and the like. ^ Because the conventional control device is configured as shown in Fig. 3 and Fig. 4 above, it can be said that even when the area of the control target is large, the temperature can be controlled to be uniform throughout the control target. You can change the control object to another control object or the size of the control object, or if the heater is aging or the surrounding temperature of the control object is uncontrollable. The problem of uniform temperature of the object. i ^ For example, in the control system of FIG. 4, when the wafer 27 that is a control target is changed to another control target, the temperature sensor 275 is disposed in the first region 273-1, and the appropriate control is in the first The temperature of a region 2734, but η cannot be properly controlled due to the different thermal conductivity of the wafer 273. —Fun Also, if the temperature sensor 275 is arranged in the central region of the thermostatic bath 272, not only the second region 2 7 3-2, but also the temperature in the first region 2 7 3 -1 cannot be controlled appropriately. °

Page 10 Yan 140 V. Description of the invention (8) FIG. 5 is a temperature characteristic diagram inside the thermostatic bath 2 7 2 of the conventional control device shown in FIG. 4. In FIG. 5, (1) is a temperature characteristic diagram of a certain kind of wafer, and (2) is a temperature characteristic diagram of another kind of wafer. 2 91 and 2 9 4 use the target set value to sigh the target temperature set value set by the device 2 8 1; 2 9 2 and 2 9 5 are temperature sensors in the first zone 2 7 3 -1 2 7 5 The temperature measurement value detected by -1, 293 and 296 are the temperature measurement values detected by the temperature sensor 275-2 in the second area 273-2. If based on the temperature characteristics of (1), when adjusting in advance, the operating amount limitation device 284, the first ratio calculation device 2 85-1, the second ratio calculation device 285-2, and the first offset calculation device 286-1 And the parameters of the second offset calculation device 286-2 are set such that the temperature measurement values 292 and 293 are consistent with the target set temperature. The temperature measurement values 292 and 293 are consistent with the target set temperature, and appropriate control is performed. If the temperature characteristics based on (2) and the parameter control based on the pre-adjustment of wafers changed to Θ of other types of wafers, the temperature detection value 2 96 in the second region 2 7 3-2 will have a fixed deviation and will not The temperature becomes uniform throughout. In this case, in order to control the changed wafer to a uniform temperature overall, it is necessary to reset the parameters of the second ratio calculation device 2 8 5-2 and the second offset nose device 286-2. In this case, every time you control the object more, you need to reset the parameters. Similarly, there is a problem that the parameter needs to be set to an appropriate value when the ambient temperature of each object is changed. In order to solve the above problems, the present invention aims to obtain a control

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Page 11 502140

The system 'after dividing the control object into a plurality of areas, it does not need to be consistent with the time of the bad temperature under the i-path system, which depends on the slope signal generating circuit, etc., and it can effectively imitate it. It occurs when it reaches the west and goes down, for example, after making ΓΓη ef reverse and 疋 μ degrees, the manufacturing process of semiconductors such as kCCD sensors can appropriately control the temperature of the wafer. In addition, the purpose of the present invention is to provide _ ^ j # i- ^ rn ra, a control device for seed feeding, the control target A% < brother removal condition 4 has changed, and it is not necessary to change the Wen Cup ^ will control the entire object to make it 1 ^, Head, f parameters can continue to be carried out =: Measured value and preset target set value-Summary of the invention The control system of the present invention controls the detection value of the state of the detected control object to converge to the target steady state value Including ... The main computing device, after inputting two target steady-state values and detection values, generates an operation amount that changes to the detected value converging to the target steady-state value, and controls the control object; the main detection device sends to the main computing device Outputting the detection value; from the computing device, inputting the detection value of the main detection device and other detection values, generating an operation amount that changes to the other detection value and receiving the detection value, and controls the control object; and from the detection The device 'outputs the other detection value to the slave computing device. Therefore, the master computing device and each slave computing device can control the temperature to a small temperature difference below a fixed value even if there is a change in the exothermic characteristics or the like in their respective areas. Therefore, setting the target steady-state temperature only in the main computing device can make the temperature in each zone rise to the target steady-state temperature according to the same heating curve, for example, and because no setting process is necessary, the temperature in each zone can be maintained.

2103-4363-PF; ahddub.ptd Page 12 502140

The poor state is stable at the target steady-state temperature, which can effectively suppress, for example, & Qiaohuan ’s overshooting or downfall after reaching the target steady-state temperature. As a result, on the subject, the fifth, the invention description (ίο) CCD sensor and other semiconductor device manufacturing process can be properly approved, the gate temperature table and the effect of wafer temperature. According to the control system of the present invention, a first selector, a target steady state value, and a detection value of the main detection device are provided, and one of them is selected— / from the computing device input — and backward.

Therefore, the same control or individual control of each area is possible. By using them in combination, it is possible to control the body temperature to a uniform temperature or to control only a part of the temperature without separately setting a new control device. effect. Surface < The control system of the present invention, wherein the slave object controls the state of the control object based on the input target steady state value or the input main detection device detection value plus a predetermined offset value. Therefore, by setting the temperature difference of each zone to the offset value and controlling all the zones while maintaining the difference of a fixed value, or by setting the response delay from the control system to the offset value, the actual The occurrence of the delay cancels out, which has the effect of effectively suppressing the oscillation from the control system. In the control system of the present invention, a target steady state value memory 'is provided to output the target steady state values stored in the master computing device and the slave computing device.

Therefore, 'the effect of having a single target steady-state value memory to control each zone is achieved. In the control system of the present invention, the number of sets and the total number of master computing devices and the number of slave computing devices are the same to output the target steady-state value. Value memory 'and is set to switch between these plural target steady-state value memories

502140 V. Description of the invention (11) The second selector of the input element of the main computing device or the gang nose device. Therefore, a single target steady-state value memory can be used to control each area, and each slave computing device can be controlled separately from the master computing device, which has the effect of becoming a convenient system. The control system of the present invention controls the detection value of the detected state of the control object to converge to the target steady state value, and includes an arithmetic device. After inputting the target steady state value and the detection value, the output changes to the detection value and converges to A first operation amount of the target steady state value; and a multiplying device, inputting the first operation amount, multiplying the first operation amount by a preset value of a predetermined proportional coefficient, and outputting a second operation amount; control in accordance with the second operation amount controlled object. Therefore, if there is a change in the exothermic characteristics in the respective areas controlled by the second operation amount, the temperature can be controlled in a state where the change is suppressed by the proportional coefficient value. Therefore, 'setting the target steady-state temperature only in the computing device can make the temperature of each zone rise to the target steady-state temperature according to the same heating curve, for example, @I □ τ makes the state stable at the target steady-state without the temperature difference in each zone. The temperature $ 'can effectively inhibit the overshoot or downfall from occurring after reaching the target steady state temperature. As a result, it is effective to control the temperature of the wafer in the manufacture of semiconductor devices such as CCD sensors. In the control system of the present invention, a proportional coefficient input device is provided to set a proportional coefficient value for each multiplication device. Because of 2, just preset. The control system of the present invention, wherein a proportional coefficient setting device is set, and the detection of the control object is set according to the corresponding setting of the complex multiplication device.

The new control is only the control system in the control system. When the measurement control is modified for measurement, or the proportional coefficient value that suppresses the difference of the control object is calculated, the operator can set the best setting for the operator in the use environment. The effect control system, in which one is set and the first selector among these plural transport elements is set. The first operation of a computing device can be performed in each zone, and the circuit can be used to make the error of the invention description (12). The value of the steady state value for each multiplication can be set. Therefore, the invention can be used in this environment. Therefore, according to the first operation of the computing device, there is no additional temperature setting or independent control of the second control operation amount of the present invention, and then the output of the second selector is selected. For example, it will be set in the multiplication device. Attention to the multiplication device has the effect of setting the system at the beginning. Among the plural operations of controlling the evil and the state of the plural operating objects of the present invention, among the temperature of a part of the detection device, a second object that outputs one side is set. The newly set proportionality factor can be measured if it is 1. The new proportionality factor can be measured when the setting is changed. The detection value is relative to this setting. Only the measurement processing will be performed below. The number and the multiplication device are the same. Switch the workload between the calculation devices or run according to the complex numbers. Use them in combination to control the overall effect to a uniform effect. Into the first operation amount and the first selector, according to the first value 'not necessary to-the * result' does not have to be one by one and can retain the previous value, into a convenient system, including devices to change the control object independently, The detection device that detects the state of the control object is a device that outputs an operation amount so that the detection device controls the detection value to converge to the target steady-state value, and detects the state near all the operation devices ^; the ^

502140 V. Description of the invention (13) The use of a device to compensate for the detection value of a ▲ value = detection of the vicinity of the operating device / instead, each operation can be eliminated by = = = ^. The measured values are approximately the same, w, and deviation. Therefore, there may be changes in the characteristics of the complex detection, and the difference between the eighth: £ may be the final steady state value at the original temperature. Also, also; the arrival of all the regions at the same time occurs more or less. " Suppress the passage after reaching the set temperature. Therefore, the effect is that under the control, it is not necessary to rely on the ramp signal to generate electrical zones. The control of each zone reaches the target steady-state temperature. The original control is used to make the temperature constant. The transition or 7 * occurs more and more, '& f can effectively suppress the process of reaching the conductive element. The control system of the present invention, such as a sensor, is composed of two or two memories and memory targets. Steady-state value; and set the target steady-state value to the corresponding setting, using the respective test b 2 and the deviations of each known operating device to calculate the steady-state control of the target value for each operation device 2 The value is used as the individual target value for the output of two and three. The calculation value corresponding to the operating device of the target value is used as the reference. The other target value is provided for the individual target value. ㈣ The detection value of the reference is made. The situation of all control voltage values can further suppress the occurrence of detection value errors, can make the detection absolute value smaller, and can make the detection values of the state uniform. The control system of the present invention of deviation, where According to their respective inspections 2103-4363-PF; ahddub.ptd page 16 502140 V. Description of the invention (14) The measured value is batched with respect to the individual target value.% B inspection deviation is controlled by PID or IMC. The value of the deviation of the detection value on the reference detection value or the recognition of the humming A, the addition and subtraction of the judgment value of the earthen heart, and the detection value of the soil, and the deviation of the detection value of λ ° soil soap plus 4 The sum of the following values is input to another calculation circuit. The control system of the present invention is straight, face + coffee to the same 彳 目 别 目 # 彳 自 味 八, the value is displayed only for all the calculation circuits for individual items. Circumstance temperature change 啬 槔 +, the calculation circuit corresponding to the reference detection value from + ...; and ^ exclusive circuit k is the input of the operation circuit plus the operation circuit of ^ used in the other operation control circuit. Differential: the coefficient and the value after the state. Thousands mean value will filter the detection value deviation. Therefore, the slowest change in the control characteristics of the circuit will be performed under the control of all the arithmetic circuits in accordance with the slowest change in the state. The operating electricity is more controllable than this state and can be controlled The control device of the present invention can effectively suppress the detected value deviation from the variation of the detected value deviation. The control device of the present invention calculates the quantity f of the state of the control object constituted by the operating area so that the representation is made plural. Area output operation value, advance: a calculation device with a preset set value, according to the first system of the control object, including the operation value setting value, calculate the measurement value of the first operation amount and the second operation ^ 和After the preset amount is entered into the first region as the first region operation amount, the first operation is set, and the second operation is performed according to the other regions of the control object. The deviation control device or the measurement of the first region Value, the third f remaining value and the preset set value are calculated according to the calculation device using the operation amount; operation, and the adder, t ^ an operation amount and a set value

2103-4363-PF; ahddub.ptd Page 17 502140 V. Description of the invention (15) The area operation value of the third operation calculated by the deviation control device is output to other areas. The amount of β-knowledge is different, and it has the use of the deviation control to suppress the change of the object to another type of control object; Second, it can eliminate the situation of control, or the aging of the heater == the change of the size of the elephant, The effect of its environmental change on the deviation of the temperature measurement of the ambient temperature.丨 χ is in other areas. Therefore, it has the kind of parameters that have changed, which can continue to restore the obstacles. It is also not necessary to change the effect of the control of any preset target setting consistency. The value and the operation amount calculation device of the control device of this test include: 箆 to Ah volume limiter i, according to the first zone J settings: including-the first operation to the division of the operation L: the operation of the rotation After measuring the branch, multiply the amount of the knife branch by β by the preset offset calculation device. For the master m = value, u and the first and first operation ip output from the first and second ratio calculation device. The deviation is the preset value, which is calculated as the -U operation amount; the value is 2 boxes = 2 = = the operation amount limiter, and calculated according to other areas, the calculated value = P The upper limit and lower limit of the operation amount are different. The upper limit and lower limit of the mulberry amount limit, and the ratio calculation and deviation = bucket π have the effect of being more appropriate in the control object.刈 2140 V. Description of the invention (16) Simple illustration of drawing Figure 1 shows the basic PID control system in the past Structure of the system. Figure 2 shows the structure of a conventional PID control system. Figure 3 shows the structure of a control system using a conventional control device. Figure 4 shows the structure of a control system using a conventional control device. Structure diagrams., (5) (1), (2) are temperature characteristic diagrams showing a control system using a conventional control device. (1), (6) are system diagrams (i) of the ipiD control system according to Embodiment 1 of the present invention. , (B), (c) are in the embodiment of the present invention] an explanation diagram for selecting a control loop method.

Fig. 8 shows the system configuration of the PID control system according to the second embodiment of the present invention = 9 (a), (b) is M (b) showing the temperature control example of the second embodiment of the present invention, and shows the implementation of the present invention An illustration of another example of the temperature_ system of Example 2. 4 ~ μ degree diameter Drawing η shows the system configuration of the piD control system according to the third embodiment of the present invention. Figures 12 (a) and (b) are temperature control examples showing the embodiment ^ of the present invention.

502140 V. Illustrative drawing of invention description (17). Fig. 13 is a block diagram showing the structure of a piD control unit according to the fourth embodiment of the present invention. Mapping Figure 14 shows the fifth embodiment of the present invention? System Structure of JD Control System Fig. 15 is a flowchart showing the processing steps up to the setting of the proportionality coefficient in the fifth embodiment of the present invention. '' FIG. 16 is a system configuration diagram showing a p 丨 D control system according to a sixth embodiment of the present invention. FIG. 17 is a block diagram diagram illustrating the structure of a p I d control unit according to the seventh embodiment of the present invention. FIG. 18 Fig. 19 shows the system structure of the piD control system according to the eighth embodiment of the present invention. Fig. 19 shows the system structure of the piD control system of the ninth embodiment of the present invention. «120 (a), (b) are shown in Fig. 19 The PID control system is an explanatory diagram of the temperature characteristics when the input value of the second subtractor and the input value of the second subtractor are set to the target steady-state temperature. Figures 21 (a), (b), and (c) show the ninth embodiment of the present invention? ^ An illustration of the temperature control effect of the control system. Jade = 22 is a structural diagram showing the iPID control system of the embodiment 10 of the present invention. Fig. 23 is a structural diagram showing a control system using an embodiment of the present invention. Control of clothing

Page 20 State 2140

^ FIG. 24 is a diagram showing the configuration of a control system for controlling a PEI device using Embodiment 12 of the present invention. Control of the plant / Fig. 25 is a graph showing the temperature characteristics of the control system using the embodiment 12 of the present invention. Symbols also 2 ~ wafer; 4 ~ PID control unit; U ~ main subtractor; 13 ~ main control circuit; 15 ~ slave PID operation circuit; 18 ~ reference value selector; 20 ~ adder; 23 ~ Reference value selector; 42 ~ wafer; 44 ~ p ID control unit; 5 subtractor; 53 ~ multiplication device; 55 ~ numerical turn-in circuit; 58 ~ measuring circuit; 101 ~ control device; 1 ~ constant temperature room ; 3 ~ thermocouple; 5 ~ heater; 1〇 ~ target steady state temperature memory 12 ~ master PID arithmetic circuit; 1 4 ~ slave subtractor; 16 ~ slave control circuit; 1 7 ~ target steady state temperature memory 19 ~ bias temperature memory; 2 bias selector; 4 1 ~ constant temperature chamber; 4 3 ~ thermocouple; 4 5 ~ heater; visually shows the stable temperature memory 52 ~ PID operation circuit; 54 ~ Control circuit; 56 ~ value input circuit; 8 control object; 502140 V. Description of the invention (19) I 0 2 ~ constant temperature bath; 103-1 ~ first area; 103-2 ~ second area; 106 ~ target set value Setting device; 108 ~ manipulation device; II 0 ~ adder; 11 1 ~ PI D computing device; 11 2 ~ operation amount limit device; 11 4 ~ parameter setting device; 11 5-1 ~ first ratio calculation device; 115-2 ~ second ratio calculation device; 116-1 ~ first bias Set computing device; 116-2 ~ mPiD computing device of second offset computing device;

11 8 ~ Operation limiter. BEST MODE FOR CARRYING OUT THE INVENTION In order to explain the present invention in more detail, the preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment 1 FIG. Β is a diagram showing a system configuration of a PID control system according to Embodiment 1 of the present invention. In FIG. 1, 1 is a constant temperature chamber, 2 is a wafer for a CCD sensor installed in the constant temperature chamber 1, and 3 is a wafer respectively located near the wafer 2 and detecting the temperature.

Thermocouples, 4 are PID control units that use the multiple thermocouples 3, ..., 3 to detect the temperature into the predetermined control of the shirt, 5 are each near the wafer 2 and the thermocouple 3 — heating to a corresponding setting 6 are respectively set at the power supply of each plus = 5, 7 are each set the heater 5, the power supply 6 and the control circuit '8 are each set at the constant temperature through the M port, 9; 4 the vent 8 is set fan. τ towel

2103-4363-PF; ahddub.ptd Page 22 502140 V. Description of the invention (20) After the PID control unit 4, 1 η-, Western memory, 1 i W 10 is the target steady-state temperature Target steady state two device)) detection temperature; ί :: 3 (hereinafter referred to as the main thermocouple 3 (the main subtractor of the main temperature (the main standard, the main operation amount of the main deviation operation is output after the 9-state temperature) to make the system output According to the PID control (main pjd computing device), u is a PID computing circuit that converges to 0% — 4 & ', after the main operation amount is turned in accordance with the main operation; =; to: 3 :: / control circuit 7 (Hereinafter referred to as the main control circuit for the energization control of the K-channel U (the main operation and 14 are respectively left by themselves-± is +, ^ even (from the detection device ⑻ = = degree), the output deviation temperature is subtracted from the subtraction ;, F: 3's detection> The respective outputs of the plates are selected according to the p ID control operation as the θ-differential device) '1 5 series of convergence to. _ Calculate the operation of the power transmission circuit and control the electrical control for the electrical control ㈣ ^ Set the desired target steady-state temperature for all the thermocouples 3 ..... 3 when they are detected and set;: 俨 a: Output the main deviation temperature after the steady-state temperature; Electricity minus the main operation amount of the target control operation to make the 1 main output according to the control power and the main control amount according to the main control difference = convergence to 0, the main system. In addition, the main control circuit 13 only needs to be an example. When the value of the main control is negative, the value of the main operation amount is increased. When the ambassador is energized, the main operation amount is increased (the main deviation is the longer the power control between the heart and the heart), 2103-4363-PF; ahddub.ptd 502140 V. Description of the invention (21 ) Control, and when the temperature is lowered (the main deviation temperature is the power-on control that is making the power-on time shorter. The larger the value of the main operation amount, the control of this main control circuit 7 is used. The output of the generator 14 has a large temperature rise. The temperature of the main thermocouple 3 decreases. On the contrary, the temperature of the main thermocouple 3 decreases. The value of the deviation from the temperature on the negative side becomes the subtractor on the positive side. According to the PID control, each time the PID calculation temperature converges to, each slave: from the case where the deviation degree is negative, the deviation temperature == temperature = control, and the more the deviation value is positive, the more the ambassador turns on the time A short power-on control is sufficient. Because the detection temperature of the main control circuit 7 detected by the main thermocouple 3 is: Hour ^ Anyway, when the detection temperature of all the slave thermocouples 3, ..., 3 is also low, W 纟 is hot! The detection temperature of the main control circuit 7 decreases. In the companion, the detection temperature of the slave thermocouples 3 ..... 3 of the king also decreases, and the temperature difference below the temple value will reduce the temperature in the constant temperature chamber 1. Control until the target steady-state temperature is controlled so that its overall convergence reaches the target steady-state: As a result, only the target steady-state temperature is set to the target steady-state temperature memory 10 of the main piD arithmetic circuit 12, which can make the thermostat 1 as a whole. According to the rise of the sample case, the solitary curve rises to the target steady state temperature, and because no setting treatment is necessary, it can stabilize the unstable temperature at a state where no temperature difference occurs. After the target steady-state temperature passes, page 24 2103-4363-PF; ahddub.r 1 " ιιιιιιιιι ιιιιιιιιι _ 5. The description of the invention (22) The more or the more it happens. Moreover, the temperature of the wafer 2 can be appropriately controlled during the manufacturing process. Semiconductor devices such as 4 testers Next, the method for selecting the main control circuit of the heater 5 will be described. Fig. 7 shows the method of selecting the main control loop at ^ = ^ roads 7, ..., 7 * The first embodiment of the month is used to describe the temperature waveform, (b) is right; In the figure J ′ (a) is the target control: the = control temperature of each case; the electricity: waveform. From ① to ④, the detection of each thermocouple 3 is the second degree of detection, and the control circuit 7 of the sample is the same. However, in the case of the image, the results shown in (b) are controlled by ",", "witch", "fox", "manualization", and "mancheng" and returned to the "selection main control loop. Figure (c) is based on this main 3 , ..., select all the thermocouples 3, ..., which have entered the temperature control, loose the measured temperature waveforms. Also, under the condition that the test temperature of all the thermocouples is suppressed to a temperature difference below a fixed value You can set the second item: steady-state temperature. It is expected that in these waveform charts, the horizontal axis is warped. The degree of axis control & the vertical axis is the target control temperature value. FIG. 8 shows the system configuration of the PID control system according to the second embodiment of the present invention = j °. In FIG. 8 ′ 17, the target steady-state temperature memory for each target stability L 1 degree from the subtractor 14 is set, 1 8 each selects the main thermocouple 3 $ check / then the temperature and the target steady-state temperature memory 1 7 the target steady-state temperature and then the reference value selector I input to the subtraction value from the subtractor 14 Page 25 2103-4363-PF; ahddub.ptd 502140 V. Description of the invention (23) (first selector). The structure other than that is the same as the embodiment. The operation is described next. W. After each reference value selector 18 selects the detection temperature of the main thermocouple 3, each subtractor 14 subtracts the detection temperature from the detection temperature of the thermocouple 3, and then subtracts the detection temperature. As the output from the deviation temperature. In addition, each reference value selector 18 selects each: the target steady-state temperature of the standard steady-state temperature memory 17, and each subtracts the target steady-state temperature from the detected temperature of the thermocouple 3 from the subtractor 14 : Foot deviation temperature output. Other operations are explained as in Example i. Therefore, according to the respective target steady-state temperature, each setting is set as' controlling according to the detection temperature of the main thermocouple 3 can be based on the target The individual control of the target steady-state temperature of the steady-state temperature memory 17 can be used to control the overall temperature into a uniform sentence or an independent part of the temperature by using it after combination. As a result, for example, the following effects can be obtained. Fig. 9 shows a temperature control example of the second embodiment of the present invention ^ u) flJ, (b) m-degree waveform. Furthermore, by checking the temperature during the temperature control cycle like this J quasi-selector 1 8 The detection of autonomous thermocouple 3 is strict, and the target steady-state temperature of each base steady-state temperature memory 17 is obtained. The effect of setting the temperature of each zone of thermocouple 3 for the target has been improved. Change

502140 V. Explanation of the invention (24) R diagram? It is an explanatory diagram showing another example of temperature control in the second embodiment of the present invention. In Fig. 10, it is the wave of the target control temperature: the test temperature, the sound of the sound, the sound of the ancient thermocouples 3,.. As shown in the figure above, the detection temperature is used as a reference to control the master control loop of each slave control circuit. Heat: 3: After the 7 'temperature of the electric couple reaches the target steady-state temperature, ^ = after the target steady-state temperature reaches 3

J: The detection temperature is switched to S of the target steady-state temperature memory 17 ϋ it can stabilize the temperature of each zone equipped with each of the thermocouples 3 to 1 degree, and it can prevent the exhaustion caused by response delay, etc. Effectiveness-Firstly, each slave control loop 7 is stabilized in accordance with its respective target, and then moves to quickly reach the target steady-state temperature, and after changing the temperature near the degree, each slave control loop 7 is switched The main reference temperature for non-electricity detection has the effect of quickly stabilizing at = temperature. # 修 也 Embodiment 3 and FIG. 11 are diagrams showing a system configuration of a PID control system according to Embodiment 3 of the present invention. In FIG. 11, 19 is an offset temperature memory with a predetermined offset value, 20 is an adder that adds the offset value and the output value of the reference value selector 18, respectively: the adder 2 is selected individually ° Adder and reference value selector 18 mm Page 27 502140 5. One of the output values of the invention description (25) is used as a subtractor to output the bias selector from the subtractor j 4. The structure other than that is the same as that of the second embodiment, and the description is omitted. The operation will be described next. p = method 20 adds the offset value set in the offset temperature memory 19 and the output value of the reference value remote selector 18. The bias selector 2 丨 selects one of the addition value of the adder 2 and the output value of the reference value selector 18, and then performs a ^ subtraction value to output from the subtractor 14 and an output from the subtractor i 4 from the thermocouple The detection temperature of 3 is subtracted from the deviation temperature from the subtraction value. Therefore, you can choose the detection temperature of the main coupling 3, plus the predetermined temperature of the detection temperature of the main thermocouple 3, the temperature, the target steady-state temperature, and the target steady-state temperature. The state of the U ff value of the thermal sample makes each slave control loop 7 'in dependence, bias, and σ production: the control of the same temperature as the shell 1 biases ... The bias value captures the difference between the state control of each slave control circuit, and the temperature response delay of the control value is set to the bias value, so that the actual control system can effectively suppress the oscillation of the slave control system. No, the delay of x cancels, and Fig. 12 is a diagram showing the implementation of the present invention. In Fig. 12, (a) is the target control, the explanation of the example of the degree of tethering, and the detection temperature wave ir of the couples 3, ..., 3 From ① skin to open = b) are all the thermal detection temperature waveforms. However, the bias selector 21 is selected from the reference value by the way of thermocouple 3; the addition of the adder 20 in the control cycle Value,, select the output value system of ^ 8 to maintain a constant temperature difference state 2103-4363-PF; ahddub.ptd _ page 28 502140 five Explanation of the invention (26) Embodiment 4 FIG. 13 is a block diagram showing a structure and a skin of a pid control unit 4 according to Embodiment 4 of the present invention. In FIGS. Terminals, 23 series reference value selector (second selector), eight target steady-state temperature memories 10, 17, 7, ..., and all of them are connected to Prince 22, ..., 22, according to the program, etc. Arbitrarily switch between each main subtractor, subtraction input element, and round element of each adder 20] = Other operations are the same as those in the third embodiment, and the description is omitted. * This operation will be described next. Reference value selector 23 According to the setting of the control program, etc., from the steady-state temperature memory 10, 17, ..., 17 and all the input terminals 22, ... ::, one of them is selected as a subtraction value to each subtractor 11 (subtraction 14). Then, each adder 20 adds the value of the corresponding degree memory 19 to the output, and each subtractor (corresponding to the detection temperature of the thermocouple 3 input to the input terminal 22, etc.) is reduced by After the ^ self-subtraction value is controlled to the respective p ID, the power is lost. The description is omitted. First teeth!? Λη n ^ A sigh. The steady-state temperature memory 1 〇, 17 ..... and the input terminals 22 of the number… .. After inputting the subtraction value from the subtractor 14, the selection of k in the field ^ ^ ^ m ^ can be made according to the selected value for a long time t ρ τ η

The arithmetic circuit 12 operates and can control the main PID H 4 ^ related to each other. The respective main PID arithmetic circuits 1 2 and 1 5 ′ or each individual batch electric power ^ W CT I system ′ can be ordered by appropriate combination. Action, no need to add a new structure, silly 7 Honor can become a country of convenience 2103-4363-PF; ahddub.ptd page 29 502140

First effect. For example, at the target steady-state temperature 舻 1 of the slave P 丨 D operation circuit 选择 1, select the set temperature of the target steady-state temperature corresponding to the slave PID operation circuit 15 to record the set temperature of 7 or other PID control circuits that can be arbitrarily specified.

... for example, after setting the target steady-state temperature in the target steady-state temperature memory u, the main control loop 7 is initially controlled according to the target steady-state temperature, and the detection temperature of the main thermocouple 3 corresponding to the main control loop 7 is: After controlling other sanitary circuit Y, it becomes a steady state, and by controlling the target steady-state temperature of the body 10 according to the target steady-state temperature, all the control loops 7, ..., 7 and the actual example 2 can be used. Effectively prevent the oscillation caused by interference between channels caused by disturbance or response delay, and the control program of the upper-level operation can perform these processes without paying attention to the multiple target steady-state temperature memory. As a result, there is an effect that the control program can be better understood than that of the second embodiment.

In addition, in the above description, the PID control system including the PID operation circuits 12 and 15 is taken as an example to describe the embodiment of the present invention. However, for example, only the PID operation circuits 12 and 15 are replaced with the IMC control circuit, and the IMC control system can be changed. The IMC control system can of course be controlled so that the detection temperature converges to the target steady-state temperature. Also, in the above description, the temperature of the control wafer is appropriately controlled in the process of manufacturing a semiconductor device such as a CCD sensor as an example, but of course the present invention only needs to control the detection value of the state of the control target to converge to the target stability State values can be applied. Example 5

^ 02140 V. Description of the invention (28), FIG. 14 is a system configuration diagram showing a PID control system according to the fifth embodiment of the present invention. in. Fig. 14, 41 is a constant temperature chamber, 42 is a wafer for a CCD sensor installed in the constant temperature chamber 41, 43 is a thermocouple arranged in the center of the constant temperature chamber and detecting the temperature, and 44 is a thermocouple The detection temperature of 43 is controlled, and the PID control unit 45 is a heater (control device) respectively disposed near the wafer 42. The 46 is a power supply (control device) 45 each is installed in each amplifier. 47 is a control circuit (control device) in which a heater 45 and a power supply are connected in series with the control unit 44, 48 is a vent provided in the constant temperature chamber 41, and 49 is a fan provided inside the vent 48. _ fPID control sheet 7044 '50 is a target that stabilizes the target steady-state temperature. It is a degree of self-definition, 51 is a subtractor that outputs the deviation temperature after subtracting the target steady-state temperature from the detection temperature of the thermocouple 43 ( (Calculation device), 52 series output == system operation, different circuit (calculation device) for the first operation amount to make the deviation temperature converge to 0, 53 series each output the first operation amount by the proportional coefficient value The multiplication device of the two operating quantities, 5 4 is the control circuit (control device) (the coefficient inputting coefficient round-in device) of the control circuit (control device) for the energization control according to the second operating quantity after each input of the second operating quantity, It includes a numeric keypad, and sets the numerical value entered from the numeric keypad 2 to the complex multiplying means 53,..., 53 as a proportional coefficient value. Next, the operation will be described. Figure 1 5 shows the flow of the processing steps up to 5 in the present invention. The coefficients are shown in Figure 5. The initial value "i" is set in the figure of the multiplication. Figure 2 is the scale factor.丨 tIcing device 53 ..... 53

502140 V. Description of the invention (29) The setting steps, step ST2 is the step of setting the target steady-state temperature (for example, 100 degrees) to the target steady-state temperature of the target steady-state temperature memory 50. Step ST3 is based on these Set the start control step of starting the control temperature. Step ST4 is a sampling step for measuring the detection temperature of the thermocouple 43. Step ST5 is to judge whether the detection temperature of the thermocouple 43 is stable at the target according to the difference between the detection temperature and the target steady-state temperature. Step for determining the stability of the steady-state temperature. Step ST6 measures the temperature near each heater 45 (for example, the temperature at the position indicated by "*") in the state where the detected temperature is stable at the target steady-state temperature. Measurement step, step ST7 is a proportional coefficient calculation step of calculating a proportional coefficient according to the deviation of the temperature of each zone from the target steady-state temperature, and step ST8 is a proportional coefficient setting step of setting each proportional coefficient to each multiplication device 53. Step ST9 is to judge whether the deviation of the temperature near each heater 45 when the temperature is controlled under the setting of the new combination of proportionality coefficients is below the allowable deviation. Set the confirmation judgment procedure. In the process of setting the proportionality coefficient, for example, when the target steady-state temperature is 100 degrees, the measurement temperature in a certain area is 120 degrees, and the first operation amount at this time is 31% of its full scale. According to the following formulas 1 and 2, the proportionality coefficient can be obtained as "0 · 8".

{120 (degree) -100 (degree)} / {100 (degree) X 100 (〇 / 〇) / 25 (〇 / 〇)} = 20/400 = 5 (%) Formula 1 RATIO = {25 (° / .) -5 (° /.)}/ 25 (%) = 0 · 8 Equation 2 Since the numerical input circuit 5 5 sets the proportionality factor calculated by the above processing to the multiplication device 5 3, it will actually be set. The wafer 4 2 is set in the constant temperature chamber '41'. In this state, the temperature control program is activated on the PID control unit 4 4.

2103-4363-PF; ahddub.ptd p. 32 502140

2 'Set the temperature setting value of the program as the target steady-state temperature in the target steady-state temperature memory 50, change the temperature as needed, and control the temperature of the wafer 42 in a rational manner. Specifically, the target steady-state temperature is set to the target steady-state temperature ° own hidden body 50 after the 'subtractor 5 1 subtracts the target steady-state temperature from the current detection temperature of the thermocouple 4 3, and the PID arithmetic circuit 52 outputs According to the first operation amount of the PID control operation, the deviation temperature converges to 0, and each of the multiplication devices is 53 pairs. The first operation amount is multiplied by the respective set proportional coefficient and output in the second operation. Each control circuit 54 performs the operation according to the first operation amount. The two operation amounts perform energization control of each control loop 47. This energization control may be controlled to the

The larger the amount, the greater the on-time per unit time (duty) =: = The larger the value of the sundown control, the smaller the on-time per unit time. In addition, the difference between the heater 4 5 and the heater 4 5 can also be passed. Therefore, 50 can make the temperature of the target stable and overpass or chaos after the temperature is stable at the target. The output control times of the PID arithmetic circuit 52 ..., 45, and the power-on time are also different according to the proportionality coefficient, and the heat release characteristics of the respective heater 45 are provided. The state where no temperature difference occurs in each section causes the temperature to rise and fall.

Just set the target steady-state temperature to the target steady-state temperature and keep the temperature in each zone. For example, the temperature rises to 丨 according to the same temperature rise curve, and because the temperature difference does not occur in each section. ^ The steady-state temperature can be effectively suppressed at Reaching the target steady-state temperature z will occur. In addition, there is an effect of disturbance caused by a fan 49 or the like. The effect of controlling the temperature of the wafer 42 by manufacturing the wafer 42 for manufacturing a semiconductor element such as a CCD sensor.

^ 02140

Embodiment 6 Mapping = 1 The system phase of the PID control system according to Embodiment 6 of the invention ，, Figures 16, 56 are set according to the input to the multiplication factor value

In each: = input circuit (proportional factor setting device), 57 are thermocouples (detection temperature input device) near the respective J, ... state 45, 58 = test circuit (proportional factor setting device), enter the complex thermoelectric Use the detection temperature of each thermocouple 57, such as the detection temperature of the MI 2215, 7 and so on. Use a numeric value after entering the scale factor of each multiplication device 53. 5

The proportionality coefficient is set in each multiplication device 53. The structure and structure of Xi Bu are the same], and the description is omitted. The operation will be described next. The measurement circuit 58 executes the flowchart shown in FIG. 15 to calculate the proportionality coefficients set in all the multiplication devices 53... 53. The numerical input circuit 56 is used to set the proportionality coefficients in each multiplication device 53. The other operations are the same as those in the fifth embodiment, and the description is omitted. And 'by setting the measurement circuit 58 in the PID control unit 44 like this, and the processing from measurement to setting is automated, compared with the first embodiment, the setting operator only performs measurement processing in the use environment , The best setting can be made in this environment, and it has the effect of becoming convenient. Embodiment 7 FIG. 7 is a block diagram showing the structure of a pId control unit 44 according to Embodiment 7 of the present invention. The PID control unit 44 includes the number (four each in FIG. 17) and a control circuit 54 such as a target steady-state temperature memory 50, a subtractor 51, and

DUZ14U V. Description of the invention (32) PID operation circuit 52. In the figure I? Rq body 50 ..... 50, the gate of Renli 59 is the input terminal of the subtraction input element of the subtraction switch 51 in the complex target steady state temperature memory, and 6 1 is in the complex number ^ Switching in the subtractors from the detected temperature from the thermocouple etc. = ... 6 °, ..., 6. Arbitrary switching between the PID operation circuit 52 ..... 1 The first switching circuit, 62 is the third switching circuit of the complex input element //// M

The fourth switching circuit (the input element of each control circuit 54 is switched to all the multiplication devices 53) '64 is the use of * value input electric paste temperature control process ^ and so on-", 53 set the calculated ratio Coefficient or control set by switching: 4 switching circuits 59, 60, 61, 62 are omitted. body. The structure other than that is the same as that of Embodiment 2. In addition, each of the subtractor target steady-state target steady-state switching circuits 61 subtraction subtractors 51 1 degrees, or each multiplication device 53, ... Input temperature, temperature record, can be used for device 51,, which can be used to set 53 losses, different 53 rounds, or for the total memory 5 0 each destruction method ... 51, the common detection control into different eight The common body 64 is the target of the target stabilization part 5 1 input, and the common detection temperature is subtracted from the body 64. The first first switching state temperature controller 5 1 is the same as the steady state temperature. Manipulation amount Manipulation amount-switching circuit 59 Memory 50,..., 5 1 input degree. Measure the temperature by switching the detection temperature. So go to the common goal of the target steady state temperature three switching circuit 62 or to all of them. Therefore, the two brothers in common at each and 50, or all at ’at each steady state temperature. , Can be used for multiplication equipment multiplication equipment _

5U214U

The setting 53 can make the amount of a common first operation amount 'or make a second operation amount of a different first operation. 2. Multiply by the proportionality factor and output the second operand. Multiply by the respective proportionality factor and output the cake. 2: Using the control body 64 to switch the fourth switching circuit 63, you can enter the output of the multiplication device 53 (the third operating amount). ) Or yes, the output of the second tool changing circuit 62 (second operation amount). Therefore, common control or different control can be performed in each control circuit 54. The switching control above the port can be arbitrarily and independently, as in the embodiment 6, can be performed in accordance with a p I d arithmetic circuit 5 2 1 based on a detected temperature, all the control circuits 54, ..., 54 act, or The output of different operation circuits 52 causes each control circuit 54 to operate. By using combination 4, it is possible to control the whole to a uniform temperature or to control only a part of the temperature independently without setting a new control circuit 54 separately. The effect of becoming a convenient system. In particular, by controlling the entire control loop 47 in accordance with a target steady-state value of a target steady-state temperature memory 50 in stability and evil, the control program in the higher-order operation may not care about a plurality of target steady-state temperature memories 50, ·· ··, 50 control. As a result, there is an effect that the control program can be made simple and easy to understand. In addition, since the input element of each control circuit 54 is switched between the PID arithmetic circuit 52 (the third switching circuit 62) and the multiplication device 53, for example, in order to reset the proportional coefficient value, it is not necessary to set the-to the multiplication device 53 The value can be measured by modifying it to 1. As a result, it is possible to measure the new scale factor without having to worry about the multiplication device 5 3, and the previous value can be retained, which has the effect of becoming a convenient system when the initial setting is changed. v ^

V. Description of the invention (34) In addition, 'the complex PID operation circuit 52 can also be used to make the complex number multiplying devices 53, ..., 53 of the complex PID operation circuit 52, and the constant temperature can also be lost: after the dividing area' The temperature is controlled for each group consisting of the plural regions. Embodiment 8 Drawing Figure 1 shows the system configuration of the PID control system of the eighth embodiment of the invention. In Figures 18 and 65, the third-selection output of the multiplying device 53 and the offset value are added to make the rabbit. _ sk, WI, the first operation is a bias addition device that sets the output for the second frame, 66_ _ W ^ ^ type setting signal, etc., and outputs to each U = road 54 according to the operation mode. The offset value in the movement of the third operation amount, etc. Jiang Li ί loses the range w 00% ~ 200% w μ ^: Eight sighs in the complex offset addition device 65 .... of 65 : = Set, after the 68 is in the manual mode and the automatic mode, select one of Song Zhao, ▲ Zhan Fei, and Lian Zhuo, and use it. According to the mode selection device among the 4 selected operation modes, 6 9 is set to the mode 2 2 2 and the operation mode switching device is provided ....... The amount of operation used in the mode is set backward. It is set in the manual mode volume setting and changing device 66, ..., 66 output hand j BC back to the action mode, and the action 切 4 cuts the belly when manual operation, the volume setting device. The “Manual Hibiscus 4 and Type 66 Attacks have entered the manual mode on the action mode setting signal: < Preparation Mode '', ^ " Heart 丨 ° Now the input type setting signal has entered the“ Manual ” Mode: capacity = moving brother output from manual when the manual setting is set = 'to each, control circuit 54 type setting signal turns on τ r car gas w, using operation 1, in the action mode 2103-4363- PF; ahddub.ptd Page 37 502140 V. Description of the invention (35) _ The respective control circuits 54 output from manual operation _ ^ The amount of operation; in the mode of operation mode setting signal m device 70 input mode, to the respective cases The control circuit is prepared to set the operation amount input by the device 69; the operation amount is the third operation amount during the operation. Otherwise, the second circuit 54 is output. Ear ^ Example 5 will be omitted, and the operation will be described next. When the PID control system is activated and disconnected, at 68, the information on the operation mode selected according to the combination of the manual mode and the automatic mode ^ selection device is f ^ mode t operation mode number input all operation mode switching devices 66. Each action = type setting letter 66 moves in accordance with the action mode. ^ The mode switching device sets the operation amount and preparation of the device 70. Setting; =, choose among the setting settings-and output Γ # to the respective control circuit 54. ® "Manual mode such as" Manual mode x preparation mode "setting or setting device 70 set the operation amount, all H operation time operation amount setting amount for temperature control; set" automatic mode χ according to the operation amount setting when preparing After setting 69 to set the amount of operation, = 2 and = quasi can be determined when Zhaofang J is from "to 1 owing to Wang Shao's control circuit 5 4 formula", "Each bet: 5: second degree control, set" automatic mode X Running mode_ ^ Each & control circuit 54 can perform the temperature according to the respective third operation amount. In the state where the "automatic mode is turned mode" is set, since the first

P.38 502140 V. Description of the invention (36) After inputting the offset value by 部 Γίί67, set the offset value to their respective offset: 65. Output of the offset addition device 65 with the offset value set To Yue Yue; ΐ 在, in the above description, the embodiment of the present invention is described by taking the PID control PD 糸 arm t including the PID operation circuit 52 as an example, but for example, the operation different circuit 52 is only replaced by an IMC control circuit The control system can be turned into the control system of the 1MC. Of course, it can also be controlled so that the detection temperature = to the target steady state temperature. χ, in the above description, taking the temperature of the control wafer appropriately in the manufacturing process of the ㈣ Π? ί conductor element as an example, t ,, ι 彳 ^ = Erran, as long as the present invention is controlled to detect the state of the control target Any measurement that converges to the target steady state value can be applied. Example 9 The θ diagram Ht shows the system structure of the p 1D control system of Example 9 of the present invention =: '81 series thermostats and other control objects, 82 series are each equipped with 1 heater (operating device), 8 3 Each of the heaters is a pair of thermocouples (detection devices) that are respectively arranged near each of the heaters 82 and detect the temperature state of the two sub-images 81. The 85 series uses the control temperature of the ff single electric element 84 to detect temperature Controls the power of the two heaters 82. F Vc r J ^ ^ ^ 1182 ^ ^ ^ ^ < Probe circuit (operating device), 87 series will each add 5! 82, heater power 83 and operation The circuit 86 is connected to the control circuit "mulberry plant", and the 88 series memorizes the target steady-state temperature. Page 39 2103-4363-PF; ahddub.ptd 502140 Description of the invention (37) Temperature memory circuit (control device). In In the following ^, the galvanic couple 84 to the heater 82: (from 87, 82) shown in the upper part of FIG. 19 is called the first control circuit, and the control path from 89, 90, 86, 84 to the heater 82, and I are recorded. The self-thermocouple is called the second control circuit, and it is added in the case of individual instructions (95, 86, 87, 82). The "first" or "second" repairs are beautiful. 89 of the component elements of the road subtract the target stability from the first detection temperature; The PID control operation is performed as the first control deviation, and the calculation result is based on this. The g-th output from the first control to the -th operation circuit 86 is the first operation amount, and the second detection value is subtracted from the first detection temperature. Yun Er Dian Er (J ^ degree deviation output detection temperature subtractor (control device temperature it / filtered output after wave processing) "test = wave circuit (control device), 93 is the detection of the first difference filter The second temperature difference of the second head of the west sound field is σ. The filter has been filtered, and cm 尨 occupies one pan degree to generate an adder (controlling the mounting and covering of the private mountain, a detection temperature and subtracting the addition value as the second The second subtractor (control device) controlled by ^ output, 95 is a PID operation that is performed according to the second industrial control deviation, and the calculation result is used as the second operation. The second piD operation is output by the second operation circuit 86. The circuit (controlling the alpha α, the operation will be described next.) In 2 thermocouples 8 4. When the detection temperature is stable at 84, the target stable cancer temperature memory circuit 8 8 After setting the target steady state temperature of the desired control object, the first subtractor 89 subtracts the target steady state temperature from the stable first detection temperature. After that, the first PID operation circuit 90 performs the calculation according to the first control deviation.

5. Explanation of the invention on page 40 (38) Control operation, the first holding control circuit 87 is energized and controlled by the circuit 86: the detection temperature of the-energization according to the-operation amount is stable. "The control deviation is" Oi, the second control output of the subtractor 94, and the control circuit is not used to control the energization. When the degree rises, the energization control of the first path controls the thermocouple 84 temperature detection. . * 在 Ϊ ί = paste the first control deviation to carry out the control within the control pair; send ^ η ;: the heater 82 is powered on; go to the -check,; ,,: ΐ, the measured temperature subtractor 91 from the- Detection temperature reduction wave 2; ί ^; skin! = 2 Perform the detection temperature deviation = remove the addition value, the second PID operation is 2 1 ^ By continuously performing this control, because at the end of the first detection target The moment when the steady-state temperature is consistent, the lightning control that ends the first control loop is the same as the time when the measured temperature of the second and the detected temperature of the second are the same. The result is that at the first detected temperature and the second two ^ At the moment when the control reaches the target steady-state temperature, the power-on control ends. ^ The degree of fermentation has changed second, said Steady state temperature of the target input - a control loop which determines the method of the loop back control younger Guo two lines in FIG. 20 shows the PID control system shown in FIG. 19 the input of the first -

2103-4363-PF; ahddub.ptd 502140

The added values are all set as the target axis time, and the vertical axis is two or two. Figure_The set steady-state target temperature of the horizontal road: temperature Γ curve; the second road: the control return temperature: the temperature curve, the temperature curve of the second detection temperature of line '98 series: the-detection, as shown in Figure 19 (a ) As shown, at the time t0, the slowest (the flatness of the curve = the -th control loop) turns into the target steady state is the first: the loop can also follow the first control back to the right one], The filtering process of the filter circuit 92 will be described for a long time. The calculation formula of the filtering process of the filter circuit 92 is shown below. At the output of this filter circuit 92, s is a Laplace transform (s) = -PID operation circuit 9. Differential coefficient, D2 is the second: the calculation of the electrical coefficient by the number of shipments ... This parameter and other input devices, etc. are not shown in the figure. G (s) = l / (1 + T · s) Equation 3 T = a ( Dl + D2) / 2 Equation 4 However, the time is always consistent. The differential coefficient is known in the differential coefficient of PID control and the number of temperature curves in Figure 20 (b) (the detection value rises to about 60% of the set value). Time) is greater than the PID control of Θ in this embodiment using the time constant 502140

By adding the value of the formula 3 which substitutes the detection value of the second detection temperature to the detection value of the first detection temperature and the individual target value of the second control loop (the first detection temperature) like this, the _ detection occurs The sequence of “,” and “w” shows the delay of the temperature change of the first detection temperature to the first detection temperature. It is also eliminated by the remaining power of the second control circuit that can be controlled by the original time constant D2 i). In particular, in this embodiment 9 'as shown in the formula 3', the more the value of the formula 3 becomes larger as the delay amount accumulates, this temperature change delay can be reliably eliminated. As shown in the formula A, the average value of the micro knife coefficient D1 used in the first PID operation circuit 90 and the differential coefficient D2 of the second PID operation circuit 95 is used, and, for example, "τ = α Compared with the case of "M", on the one hand, the temperature change delay is effectively eliminated, and the temperature change delay is not eliminated as much as the case of "T = A Μ". The upper side of the temperature change curve of the first control loop has the effect of appropriately eliminating the delay of the temperature change. FIG. 21 is a diagram showing the effect of temperature control of the iPID control system according to the ninth embodiment of the present invention. Fig. 21 (a) shows the temperature curve of the first detection temperature when the target steady-state temperature is input as the subtraction / f to the second subtractor 94. Fig. 21 (b) shows the temperature curve of the first detection temperature. When the first detection temperature f is input as the subtraction value to the second subtractor 94, the temperature curve of the first detection temperature and the temperature of the second detection temperature are shown in FIG. 21 (c). The target temperature is generated by using the output of the adder 93 as the temperature curve of the first detection temperature and the temperature curve of the first detection temperature in the case where the method f turns into the second subtractor 94. In Fig. 21, 9 9 is a temperature curve of the output of the second target / demand generating adder 93.

Fifth invention description (41) Ludu: the production control loop and the second control loop, the difference between the heating efficiency of the respective heaters and the difference between the temperature curve appear directly, if the time normal from U: 5, etc. Characteristics-To the people_ First work to make the heating degree :: temperature rise or fall. However, in the case of using the second ί:; ::: to suppress the degree difference to the phase: ϋ Ϊ ί, the temperature difference between the temperature curve or the delay time of the temperature drop 疋 can be used to increase the temperature and control the change of the control object The situation can be reduced. In addition: the temperature i increases or decreases by π, as shown in Example 9 of palladium palladium. When the temperature difference occurs, use the second control circuit to spare a little extra production power according to the temperature difference = Eliminating the temperature difference equivalent to a fixed delay time and ordering the temperature:--Π is a control of rapid temperature changes, and it can also make the actual pulse difference smaller, and you can order the temperature to rise or lower when it is about the same: Elimination of the temperature $ between temperature changes, because the entire control target can reach the target temperature at the same time, and it will not cause the temperature gradient between the first heater 82 and the second heater 82. Convection can make the overshoot or undershoot hardly occur after reaching the target temperature. The 纟 σ result can make the control object 81 as a whole quickly stabilize at the target steady-state temperature. As shown above, according to the ninth embodiment, Includes two sets of operating devices composed of the actuator 82 and the operating circuit 86 and making the temperature state of the control object 81 independent of each other, and detects the heat of the temperature state of the control object 8 丨

2103-4363-PF; ahddub.ptd Page 44 V. Description of the invention (42) The electric couple 84 and the operation amount of the two sets of operating couples 84 to the control object 81 check wheel make the thermoelectric PID arithmetic circuit 9 0 The control sensitivity of 9 and 5 converged to the vicinity of the target steady-state temperature of the heater 82, which is far away from the German workers, #, Tong, because the thermocouple 84 detects the two heating temperature detection values i = the second use The deviations of the detection values of the respective operating quantities of the output operating circuits and M degrees. Therefore, 2 divisions, the first detection temperature and the second detection temperature curve change to the target steady-state temperature detection / temperature according to the difference of approximately the same temperature zone and the original temperature; = Heater 82 or the area in charge is approximately simultaneously Reaching the final level: all over or down after reaching the set temperature: f can also be suppressed. Therefore, the effect is that it will not depend on the ramp signal under the conditions of r and r m; also generating electricity; And] J: each: the time when the f system reaches the target steady-state temperature, the original control is used to make Zong,, w Xu, &A; ★, and it can effectively suppress the occurrence of the problem when reaching 5 'For example, in the process of manufacturing 70 semiconductors such as a CCD sensor, the temperature of the wafer can be appropriately controlled. ^ According to the present embodiment 9, including the memory of the target steady state f temperature memory electric paste, and each of the electric charge ^ stable use of the control of the respective detection temperature for the individual target temperature: difference = = for the respective operation of the electric paste 2j @ piD 运 ^ 路 90: 95 output after the manipulated quantity 'Because the individual piD operation circuit is supplied with an individual target value 90, the target steady-state temperature is provided, and the second piD operation circuit is provided with an individual target value. Compared with the case where only the target steady-state values are set individually for all the plD arithmetic circuits 90 and 24, the detection value can suppress the occurrence of detection value errors.

502140

Therefore, the absolute value of the deviation of the detection value can be made smaller. Enables status detection

According to the present embodiment 9, the UiD j different circuit 90 corresponding to the reference detection value is selected as the piD whose state changes the slowest when the individual target values of the same value are provided for all the piD arithmetic circuits 90 and 95. Electricity =, and to the input of other arithmetic circuit 95 plus the average value of the differential control coefficient D2 of ^ 95 and the differential control coefficient D1 of 90 in the selected arithmetic circuit will be detected value deviation The value after the wave is performed according to the control characteristics of the PID arithmetic circuit 90 which changes slowly in this state. Under the control of all arithmetic circuits 90 and 95, the P1 D arithmetic circuit whose control characteristics are slower than the state% * In the case where a deviation of the detection value occurs when the calculation circuit of the best 90 is different, it can be controlled to eliminate the deviation of the detection value.

Changes in the detection value. π < I Embodiment 10 FIG. 22 is a diagram showing a system f of a iPID control system according to Embodiment 10 of the present invention. In FIG. 22, the 100-series filter circuit (control device) is rotated into the first control deviation together with the detected temperature deviation, and then filtered according to Equation 5 to output the filtered detected temperature deviation. However, 0ffset is the filtered detection temperature and degree deviation, SP1 is the target steady-state temperature, ρν is the first detection temperature, PV2 is the second detection temperature, fs is the input sampling frequency of the filter circuit, and f 11 ter () is First-order filter function. of fset = 〇 SP1 ~ PV1 "is within 0.5% f s and" PVl "is stable)

Chuan 2140

V. Description of the invention (44) offset = fi 1 ter ((PVl -PV2) (SP1 -PV1)) ("SPl ~ PV1" is larger than 0.5% fs or "PV1" is not settled) Equation 5 In addition The structure is the same as in the ninth embodiment, and the description is omitted. Secondly, Xiong Ming made a move. In the state, according to the above-mentioned degree generation method, the temperature "SP1-PV1", which is stable at a specific temperature such as room temperature, is controlled to be within 0.5% fs. "PV1" is stable, the output of the filter circuit 100 according to the formula 2 becomes "0", and the first detection temperature is output from the second target temperature adder 93. Therefore, the second control system is controlled so that the second detection temperature becomes the first detection temperature.

In this state, after the target steady-state temperature memory circuit 88 memorizes the new target degree, the first subtracter 89 subtracts the target stability from the first detection temperature, so the first control loop controls the difference between the first detection temperature and the target stability. Until it becomes 0, that is, the first detection temperature becomes the target steady-state temperature, and since the output of the second target temperature generating adder 93 changes the first detection temperature, the second control loop starts the second detection temperature and becomes the first f-measurement temperature. Of control. In addition, when rSP1 —ρνι ”is larger than 0.5% fs or“ PV1 ”is not stable, the filter circuit 100 uses the temperature difference between the second detection temperature and the first detection temperature to output a filtered detection according to the above Equation 3. Temperature deviation. The filtered detected temperature deviation is greater when Γρνι — pv2 ”is larger, and larger when“ SP1—PV1) ”is larger, because the larger the temperature difference between the set target steady state temperature and the current temperature is, the larger it becomes. The nature is the same as the case of the σ ^ "m-PV2" variable & has the effect of the best compensation in a wide temperature ladder; Also, because a first-order filter is used,

2103-4363 -PF; ahddub.ptd Page 47 502140 5. Explanation of the invention (45) is when switching between "offset = 0" control and "〇ffset = filter ((pvl_ PV2) (SP1 — PV1)) control" 'The offset value also changes continuously 0, and the first detection temperature and the second detection temperature become the temperature near the target steady-state temperature' "SP1-PV1" is within 0.5% fs and "PV1" is settled down 'from the second target The temperature generating adder 93 outputs the first detection temperature again. The other operations are the same as those in the first embodiment, and the description is omitted.

In the above embodiment, an example has been described in which the PID arithmetic circuits 90 and 95 are used as the control device, but the same effect can be obtained by using the IMC arithmetic circuit. Furthermore, in the present invention, after filtering the deviation between the detection values of the first detection temperature and the second detection temperature, the filter output is added to the first detection temperature serving as a reference, but the difference between the first detection temperature and the second detection temperature is added. Adding the difference directly to the first detection temperature can also obtain approximately the same effect. Embodiment 11 Fig. 23 is a structural diagram showing a control system using the control device of the present invention to control the entire crystal circle of a control object to a uniform temperature. In Figure 23,

I 0 1 is a control device that includes a PID control function, 1 0 2 is a thermostatic bath, 1 0 3 is a wafer arranged inside the thermostatic bath 1 0 2, 1 0 4-1 and 1 0 4-2 are in accordance with The operating amount of the control device 101 is a heater that controls the internal temperature of the thermostatic bath 丨 〇2, 105-1, 105-2 are the first and second regions 103-1, 103 of the detection wafer 103 Temperature sensor near the temperature of -2, 107- 丨, 107- 2 adder, 108-series operation amount calculation device, ι09-series deviation control device, II 0-series adder.

Fifth, the description of the invention (46), followed by the action. The control device 101 uses the first adder 107-1 to calculate the temperature measurement value ichl measured by the temperature sensor j5-1 in the first region 1 0 3-1 of the wafer 1 being controlled. The deviation from the set value from the target set value setting device 106, and the second adder 1 07-2 is used to calculate the temperature detected by the temperature sensor 1 0-5-2 in the first area 1 03--2. The deviation between the measured value of ch2 and the set value from the target set value setting device 106, the operation amount calculation device 108 is controlled according to the deviation output from the first adder 10-7-1 = Example = PΠ) , Calculate the amount of operation. Here, the control device 101 sets the calculated operation amount to the Ch 1 operation amount (the first region operation amount), and then outputs it to the heater ^ '^ disposed in the first region 103-i. In addition, the deviation control device 109 performs, for example, PID control in accordance with the deviation output from the second adder 107_2, and calculates an operation amount. In addition, the adder 11 adds the operation amount calculated by the operation amount calculation device 1 08 and the operation amount calculated by the deviation control device 1 09 to ch 2 operation amount (in other area operations). Output to the heater 104-2 arranged in the second area 103-3. As shown above, if the type of the crystal 103 to be controlled or the environment of the controlled object is changed according to Embodiment 11, the operation amount of chi output to the first region 10 3-1 is set according to the target. The difference between the temperature and the chl measurement value of the temperature measurement value in the first region = 3-1 is calculated by using a different value such as piD control, and the control in the first region 103-i is appropriately performed. However, if the ch2 operation amount output to the second region 103-2 is the operation amount calculated using the operation amount calculation device 108, a fixed deviation occurs in the temperature ^ 2 of the second region 103-2. m ^ Therefore, in order to eliminate the deviation, a deviation control device 10 is provided.

2103-4363-PF; ahddub.ptd p. 49 502140

The m 9 control device 109 uses the P1D control and other calculations to calculate the deviation between the target set temperature and the measured value of c h 2 which is the output value in the second region. And the 'addition device 110 adds the operation amount calculated by the deviation control device ^ and the operation amount calculated by the operation amount calculation device 108 to output the operation amount ch2. That is, 'the use of the deviation control device _ = different operation amount can eliminate the fixed deviation of the temperature value occurring in the second area 103_2. S column Therefore, according to the eleventh embodiment, by setting the deviation control device 109 and the addition device 110, it is possible to eliminate the type or control object of the wafer 03 in the past.

Changes in the environment, etc., occur due to a fixed deviation in the amount of temperature in the second region 102-3. Example 12 Next, Example 12 will be described.

Fig. 24 is a diagram showing a configuration of a control system using the control device of the present invention. In FIG. 24, 101 is a control device including a control function of Π), ι2 is a thermostatic bath '1 0 3 is a wafer disposed inside the thermostatic bath 1 〇2, and 104 — 1 is in accordance with ch 1 The heater controls the upper temperature inside the thermostatic bath 1 〇2 (corresponding to the first zone 103-1). 104-2 is the lower temperature inside the thermostatic bath 102 (and the second zone 1). 〇3 —2) heaters, 105--1 series are temperature sensors that detect the temperature in the upper part of the constant temperature bath 1 〇2 near the thermostat 1 〇3, 105--2 series test configuration Temperature sensor for the temperature of the lower part of the interior of the constant temperature bath 1 〇2 near the wafer 〇3. Also, '106 is a target set value setting for setting a target temperature of the wafer 103

2103-4363-PF; ahddub.p t d p.50

ΐ U7 Tian 1 is the amount of temperature deviation from the temperature detected by the temperature sensor 105-1: the standard set value set by the set value setting device 106, an adder for calculating f '111, the first adder 107 -1 Calculated deviation = piD computing device that outputs the operation amount after PID operation (* one piD operation recommendation two: I2 is the operation limit limit and 1 " limit operation * limit device (compared to the first ^ operation limit device) ), 115-2 are the first ratio calculation device and the second ratio calculation device that perform different operations on the operation amount b.

U! _2 is the first offset meter and the second offset calculating device for performing offset calculation on the operation amount ce, 113 is a branching unit from the operation amount limiter 2, and the operation amount b is branched, 114 Parameter setting device for setting the operation amount limit 112, such as a keyboard and other manual parameter setting devices, such as a keyboard 110. The operation amount calculated by the self-bias calculation device 116_2 "and the operation amount h restricted by the operation amount limitation device 118 described later Adder for calculating ch2 operand. 10 7-2 is the second adder that calculates the deviation from the temperature measured by the temperature sensor 105 and the measured value 2 and the set value set by the target setting value setting device 106, and 117 is the second adder The PID calculation device (second piD calculation device) that outputs the operation amount g after PID calculation of the deviation calculated by the two adders 10-7-2. 11 8 is an operation amount limitation device that limits the upper limit and lower limit of the operation amount g (No. Two operating amount limiting device). & Next, the operation will be described. The control device 1 01 input is the temperature sensor ch 1 measured at the temperature sensor 1 05-1 and the temperature sensor 1 05-2 at the first area. 1 05-2 ch2 measurement of the detected temperature. Of course

) Like 140.5 After the description of the invention (49), the chl operation amount and ch2 operation amount are generated, and they are arranged first. The heater 104-1 of 10-3 -1 outputs the operation amount of chi, and is arranged in a region of the zone. The heater 104 — 2 outputs ch2 operation amount. A region = The temperature of the heater 104-1 according to the operation amount of chi, for example, by changing the temperature of the first region 103-1 inside the bit temperature tank 102 when the power is turned on. The same 'heater 1 〇 4-2 controls the temperature of the second zone 1Q3-2 of the constant temperature bath 4 2 according to the operation amount of ch2. Next, the processing inside the control device 101 will be described. Value. The parameter setting device 114 uses the button to input the setting operation: the amount limiting device 112, the first [example = Set 115], the first, the computing device 11 6-1, the second proportional computing device u 5 — 2, and the second computing device 1 1 6 —2 and operating quantity limiting device 1 1 8 parameters. Owing to the number of parameters of the operation amount limiting device Π2 and the operation amount limiting device 118 呌 quality pull H c brother ratio calculation device 115-1 tube control device 11 5-2 parameters are proportional values. The Yuan numbers of the first offset juice II 116-1 and the second offset calculation device 116_2 are offset values. The meaning of the J number will be explained in the description of each device. 6 Diyi adder 107-1 calculation uses target setting value setting device ^ target setting value setting device 1 〇6 uses the key input operation not shown in the figure δ to set the desired target temperature for wafer 1 〇3 series value. The set target is output to the first_adder 107-1 and the second adder 107-7-2.温 ^; set value. The parameters of the golden brace must be 1 1 d, 1 tn m., _ _… From the case of # 入 拥 # mouth and the bias offset meter is 90 C, the deviation is 90—100— = 10, the first Addition ^ 5, the deviation between the set value of the degree and the measured value of C h 1 and the measured value of the difference output device 111 are output. Example #, the setting value is 10 (rc, chl ~ then

V. Description of the invention (50) 1 〇7 -1 outputs the value η:;! :: 1 The key-in operation of the button not shown above is used to set the control scheme of m for i: After the deviation calculated by 1'1, This operation amount a is performed. # 作 旦 /, # 里 a, to the operation amount limiting device 11 2 rounds F operation in a generally take a value of 0% ~ 100%. The work-in-amount limitation device 112 limits the value calculated by using the parameter setting Yu setting 111 to the profit operation amount a, and sets the upper limit and the lower limit to 80% for the branch. :. The operation amount a is 20%. Operating amount limiting device ⑴: When the lower limit value is used to limit the latter 浐 屮 i: Output the operating amount b = 80% in other cases, and ί = Γ amount b = 2 °%. Because the operating amount is not limited by the upper limit 时 and 50 when it is 50%, the direct output of the operating amount b = 50%. The value of knife blade opening p 11 3 allows the use of the operating amount limit b to directly generate the chl operating amount f device; 12 Limitation of the amount of operation. The first-ratio calculation f ^ produces the path of the operation amount Ch2 ^ * b ^ a, (J ^ 'w' /, J113 ^^^^^ After the proportional value is further reduced, the amount of output c is output to h 5 θ of the 8th. For example *, when the proportional value is set to 50%, 50 × 0.8 = weight is calculated. The first proportional metering device 115- 1 The output operation amount c = 40%. The operation example is to set up a different device U 6-1 for the first proportion calculation device 11 and 1 ', and set the value set by the soil selection utilization parameter setting device 114. The value is, for example, ^ ~ = is set to the operating value of Chl and is output to the heater 104-1. Example 50 + lil = fi 2 / 疋 ★ When the value is set to 110, the operating amount. When it is 50%, calculate the first deviation of ° Set the calculation device 116-1 to output the operation amount d = 60%. 2103-4363-PF; ahddub.ptd Page 53 5. Description of the Invention (51) --- " The second ratio calculation device 11 5-2 pairs of utilization points Multiply the operation amount b of the branch 11 3 by the parameter setting After the proportional value set by the device 114, the operation amount e is output to the first offset calculation device 116-2. The second offset calculation device operates on the output of the second ratio calculation device 115-2 = /// 利用 ^ After the value set by the number setting device ι14 is set, the operation amount f is output to the adder 11 ().

The second adder 107-2 calculates the deviation between the set value of the target temperature set by the target set value setting device 06 and the measured value of ch2, and sends it to the PID calculation device 117㈣. The PID calculation device 117 sets a PID value by using a key input operation not shown in the figure. After inputting the deviation calculated by the second adder 10-20, PID calculation is performed to calculate the operation amount g, and the operation amount g is output to the operation limiter 118. The operation amount g is generally 0% to 100%. The operation amount limitation device 118 limits the operation amount g calculated by the PID calculation device 117 with the upper limit value and the lower limit value set by the parameter setting device, and outputs the operation amount h to the adder 110. After the adder 110 adds the operation 1 f calculated by the second offset calculation device 116_2 to the operation amount h limited by the operation amount limitation device 丨 丨 8,

The ch2 operation amount is output to the heater 104-2. For example, in the case of the operating amounts f_%, =, calculate 50 + 5 = 55%. Adder " 〇 Output ch2 operation 篁 d = 5 5%. Next, a temperature characteristic diagram of a control system using the control device of the twelfth embodiment of Fig. 24 will be described using Fig. 25. FIG. 25 is a temperature characteristic diagram after the control target is changed to another wafer. In Figures 25 and 131, the target setting is used.

502140 V. Description of the invention (52) The target temperature set value set by the value setting device 10 6 is 1 3 2 is the temperature measurement value detected by the temperature sensor 105-1 in the first area 103-1, 133 It is the temperature measurement value detected by the temperature sensor 1 105-2 in the second area 10 3-2. Before changing the temperature control to another type of wafer, during the pre-adjustment, the operating amount limitation device 11 2, the operating amount limitation device 11 8, the first ratio calculation device 115-1, and the second ratio calculation device 5- 2. The parameters of the first offset calculation device 116-1 and the second offset calculation device in? Are set such that the temperature measurement values 132 and 133 are consistent with the target set temperature, as shown in the temperature characteristic diagram of Fig. 5 (丨). The temperature measurement values 1 3 2 and 1 3 3 are consistent with the target set temperature, and appropriate control is performed. When changing to another type of wafer, as shown in Fig. 25, the temperature measurement values 1 2 3 and 1 3 3 are consistent with the target set temperature, and appropriate control is performed. As shown above, if the type of the crystal of the controlled object or the environment of the controlled object is changed according to Embodiment 12, the ch 1 operation amount output to the first region 1 03-1 The deviation between the target set temperature and the chl measurement value of the temperature measurement value in the 10th area 103-1 is calculated using piD control, etc., and appropriately performed in the first area-control. In addition, if the ch2 operation amount outputted to the second region 10-3-2 is the operation amount f calculated by using the PID calculation device lu and the like according to the measured value of chl, the temperature measurement value of the second region 103-2, A fixed deviation occurs. μTherefore, in order to eliminate the deviation, a second adder 1 07-2, a PI arithmetic device 117, an operation amount limitation device 118, and an addition control device 117, and a second adder 1 07_2 deviation control are provided.

2103-4363-PF; ahddub.ptd Page 55 502140 V. Description of the invention (53) 109 According to the ch2 measurement value using the second adder 107_2 from the target temperature setting value and the temperature measurement value of the two area ^ 103-2 After the calculated deviation enters the PID operation, 'the operation amount 乜 is generated. D Then, the adder 110 adds the operation amount calculated according to the ch2 measurement value to the operation calculated according to the ch2 measurement value, sets it as the ch2 operation amount, and outputs it to the heater 104-2. That is, it is possible to eliminate the fixed deviation occurring in the second region 〇 03_2 by using the operation amount h different according to the measured value of ch2. Therefore, if the second adder 10 7-2, the PID operation device 117, the operation amount limiting device 18, and the adder are provided according to Embodiment 12

110, which can eliminate the fixed deviation of the temperature measurement value in the second region 1 03-2 that occurred when the type of the wafer or the environment of the control target has changed in the past, and in the above-mentioned embodiment 12, By inputting the setting value set by the target setting value setting device 106 into the second adder 丨 〇7-2, the temperature is controlled to be uniform throughout the wafer 103, but the measured value of c1 can also be input. , Instead of setting value. By adopting the structure of inputting the measured value of ch 1 into the second adder 1 〇 07-2, the temperature characteristic of the wafer 103 in the second area 10 3-2 can be tracked in the first area 1 0 3 -1. Temperature characteristics. That is, it is effective when the temperature of the wafer is increased or decreased according to a fixed gradient. In the above embodiments, PID control is used as an example, but it can also be applied to IMC (Internal Model Control) control. Industrial Applicability As shown above, the control system and control device of the present invention are suitable for use

2103-4363-PF; ahddub. Ptd page 56 502140 V. Description of the invention (54) Multiple heaters control the temperature of the wafer uniformly in the semiconductor process. ϋΒ 2103-4363-PF; ahddub.ptd Page 57

Claims (1)

502140 VI. Application for Patent Scope 1 · A control detection value is converged to the objective, which is characterized in that the main computing device becomes a target of the detection value; ^ After the main detection device receives a value from the computing device, a change amount is generated to control the control slave detection device 2 · If you apply for the first selector, the system will control the standard steady-state value of the state of the detected control object, including: 'After entering the target steady-state value and detection value, it will produce a variable convergence to the target steady-state value. Operate the amount of control to control the selection of 3 · device pair value plus 4 · target stable target 5 · number and the main value of the target value memorization, and if the predetermined bias entered by the application is as stable as the application specific value State value. For example, if you apply for a special operation device to cut between the steady-state value body, input it to the other object;, enter the target to the profit range, and output the detection to the profit-range body's main calculation device after the stable value of the profit range target. The operation of converging the detection value of the main detection device and other detection values to the detection value and outputting the other detection value from the computing device. The control system of item 1, in which the steady state value and the detection value of the main detection device are set, and the output of the calculation device is selected. The control system of the first item, wherein the state of the control object is controlled based on the detection value from the operation state or the input of the main detection device. The control system of the first item, wherein the control system of the first item is provided to memorize the benefit range of the master computing device and the slave computing device, wherein a same output target steady-state memory is set as the total number of the slave computing devices, and It is set to change the input of the master computing device or the slave computing devices in the steady state of these complex targets. 2103-4363-PF; ahddub.ptd p. 58 502140 Sixth, the scope of patent application is the second selector. 6. · A control system that controls the detection value of the state of the detected control object to converge to the target steady state value, which is characterized by including: a computing device, after inputting the target steady state value and the detection value, the output changes to the detection value A first operation amount that converges to the target steady state value; and a multiplying device that inputs the first operation amount, multiplies the first operation amount by a preset value of a predetermined scaling coefficient, and outputs a second operation amount; according to the second operation Volume control object. 72. The control system according to item 6 of the scope of patent application, wherein a proportional coefficient input device is provided, and a proportional coefficient value is set for each multiplication device. I The control system of item 6 of the scope of patent application, wherein a proportional coefficient setting device is provided, and according to the detection value of the control object of the complex multiplication, the multiplication dream department knows = π ⑨X⑨ 夕 抡 t ^, water The measured value of the oak of the bed device to suppress the control object is set relative to the target steady state value. The value of the proportionality factor of the error of the L heart value is set to 9 after each. · If the patent application scope is the same as the multiplication device; the control system is strong, where 'set up a calculation device to switch between multiplications = heart and set In these plurals !. . For example-the first selector of the scope of the patent application. After entering the first operation amount and the second operation amount, the second one is the second system, where 'the auxiliary selector is set, and the second one is selected according to the second selection. The second n. Wheel: Control the control object. The multiple operating devices, a, a, change the control object independently of each other. 检测 Detection of the state of the control portrait 2103-4363-PF; ahddub.ptd p. 59 The detection value of the state of the control and output of the control object to the plurality of operating devices converges to the second and second sets. The characteristics of the control device are: the control device of the steady state value of cobalt, the detection device detects all the operations, and the control device is used for A certain test; the deviation of the detected value of the near test value compensates the amount of operation attached to each fall. Separately explore the respective dreams of the set output Λ2: the control system, system of the 11th patent scope of the claim Λ, which controls the i11 π 軚 steady-state value memory, and memorizes the target steady-state value; Circuit, and the corresponding difference between each of the operating devices, Gutian A and Yunyi Electric, for the individual target value π = output of each detection value after the interaction amount = = detection value of the operation of the respective operating device Operational practices = 忒: attached, Λ Ά 'Bei value is provided as an individual target value to other computing circuits. The control system of the 12th item in the scope of the calculation of electricity and electricity, each of which runs PID control or IMC control; the control deviation of the measured value relative to the individual target value is checked up = bias ΪΪΪ The value is the detected value of the benchmark The sum of the values after adding the wave is input: Second, the measured value plus the arithmetic circuit with a slow deviation of the detected value, S or ί, ',, S, the same individual target value. The temperature change is the most corresponding to the reference detection value. Operating circuits; other operating circuits have been added to control circuits used in other operating circuits. 2103-4363-PF; ahddub.ptd Page 60 502140 Six. Patent application scope ^ Differential control coefficient of the road and the average value of the selected ~ number will filter the detected value deviation of the filter circuit. A control device calculates an operation amount. The π ^ system is the amount of the state of the control object constituted by the region. The value% makes the expression "output the operation amount to each of these regions. It is characterized by including: a control operation amount calculation device, according to the control value and The preset setting value is calculated, and the first operation icon = the first area is calculated as the first area operation amount, and the deviation control device is operated according to the control object: the first area is rotated out; 'Will = preset: the set value or the amount of the first area, the amount of the second area, the blindness of the clam value: Yi Nai Yi Di 敦, the complex system, the fixed value ~ only the amount of work; and the adder' The second operation operation amount calculated by using the operation amount and the second operation operation amount calculated by the deviation control device is calculated as the operation operation amount of other areas. For example, the control device amount calculation device of the patent scope No. 15 includes : /, R # as the first operation amount limitation device, the upper and lower limits of the operation amount calculated according to the measured value of the first area and the preset setting value; the first and second ratio calculation devices will The first operation amount After branching the operation amount output from the limiting device, multiply the branched operation amount by a preset setting value; and the first and second offset calculation devices, for the first, second, and t calculation devices. The output operation amount is added to the preset value. ϋϋΙΙ ΙΙ ^ Εϋ Page 61 2103-4363-PF; ahddub.ptd 502140 2103-4363-PF; ahddub.ptd Page 62