WO2001010008A1 - Investisseur trois niveaux ou cycloconvertisseur pwm - Google Patents

Investisseur trois niveaux ou cycloconvertisseur pwm Download PDF

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Publication number
WO2001010008A1
WO2001010008A1 PCT/JP2000/005183 JP0005183W WO0110008A1 WO 2001010008 A1 WO2001010008 A1 WO 2001010008A1 JP 0005183 W JP0005183 W JP 0005183W WO 0110008 A1 WO0110008 A1 WO 0110008A1
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WO
WIPO (PCT)
Prior art keywords
diode
module
level
emitter
collector
Prior art date
Application number
PCT/JP2000/005183
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English (en)
Japanese (ja)
Inventor
Akira Kumagae
Kenji Yamada
Sadao Ishii
Original Assignee
Kabushiki Kaisha Yaskawa Denki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Yaskawa Denki filed Critical Kabushiki Kaisha Yaskawa Denki
Publication of WO2001010008A1 publication Critical patent/WO2001010008A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Definitions

  • the present invention relates to an inverter and the like using a module in which semiconductor switches and diodes constituting a three-level inverter for converting a DC voltage input to a desired AC voltage output are arranged on the same structure and connected.
  • semiconductor switches and diodes constituting a three-level inverter for converting a DC voltage input to a desired AC voltage output are arranged on the same structure and connected.
  • Figure 2 shows the basic configuration of the power conversion unit for the three-level chamber.
  • IGBT insulated gate bipolar transistor
  • the present invention solves the above-mentioned problems, and an object of the present invention is to provide a composite module that realizes a three-level driver and a PWM cycloconverter using a plurality of semiconductor chips at low cost and small size. Disclosure of the invention
  • the present invention provides:
  • 3-level inverer section Divide the DC voltage between the P (positive) side and the N (negative) side into two Inverter section that outputs at the level (hereinafter referred to as “3-level inverer section”), where a semiconductor switch chip with diode chips connected in anti-parallel is connected to the P-side with the top collector pin connected.
  • the emitter is connected to the second collector, the second emitter is connected to the third collector, the third emitter is connected to the fourth collector, and the fourth emitter Are connected in series so that are connected to the N side, the output terminal is taken out from the connection point of the second collector and the third emitter from the P side, and the first emitter is connected from the P side.
  • the cathode of the diode chip is connected to the connection point between the evening and the second collector, the anode of the diode chip is connected to the neutral point that divides the DC voltage into two, and the third emitter from the P side And a diode chip at the connection point of the fourth collector.
  • the anode of the diode chip is connected, and the cathode of the diode chip has a one-arm unit composed of a unit connected to a neutral point obtained by dividing the DC voltage into two, and the one-arm circuit is divided into three circuits.
  • all the top collectors are connected to the P side
  • all the fourth emitters are connected to the N side
  • the second emitter and the third collector are connected to the third collector.
  • the diode node connected to the diode node and the power source of the diode chip connected to the third emitter and the fourth collector are placed and connected on the same structure in parallel at the neutral point.
  • a rectification unit that rectifies the AC voltage and converts it to a DC voltage
  • a braking circuit unit that drives the three-level driver and a discharge resistor for braking.
  • the rectification diode and the braking circuit used for the rectification unit The semiconductor switches and diodes used are arranged and connected on the same structure as the inverter module described in (1) above.
  • a module in which a plurality of semiconductor switches and diodes necessary for realizing the circuit of the three-level driver are arranged and connected in a chip or a mold state for each chip on the same structure such as a board or an aluminum plate is connected. Since it can be used, miniaturization and cost reduction can be realized over three levels.
  • the invention of the PWM cycloconverter is a PWM cycloconverter for directly converting a commercial AC voltage directly to an AC voltage of an arbitrary frequency, and includes a plurality of semiconductor switch chips constituting the PWM cycloconverter. Diode chips are arranged and connected on the same structure.
  • a module In a PWM cycloconverter using a semiconductor switch and a diode of a surface mount type discrete component, a module is used in which the semiconductor switch and the diode are mounted and wired on the same structure. I have.
  • the present invention is characterized in that the PWM cycloconverter described in the preceding paragraph (7) or (8) is multiply connected.
  • connection relation described in (1) above applied to an NPN semiconductor switch, is similarly applied to a PNP semiconductor switch.
  • FIG. 1 shows an example of a module configuration for a three-level driver overnight according to the first embodiment of the present invention.
  • FIG. 2 is a diagram showing a main circuit in a three-level inverer part.
  • FIG. 3 is a diagram showing various main circuits of the PWM cycle port converter.
  • FIG. 4 is a diagram showing a specific example in which the bidirectional switch BS of FIG. 3 is realized by using two unidirectional semiconductor switches in series or in parallel, and further using a diode or the like.
  • FIG. 5 is a perspective view of a circuit device according to a second embodiment of the present invention, in which the pattern of the PWM cycloconverter of FIG. 3B is realized using the IGBT and the diode of FIG. 4A.
  • FIG. 6 is a structural diagram of the present embodiment in which a module is formed including the module circuit 10 of FIG.
  • FIG. 7 shows a modification of the second embodiment of the present invention.
  • ⁇ 1 This is a perspective view of a circuit device realized by using the IGBT and diode shown in Fig. 4 (a) for the pattern of the cyclocomputer.
  • FIG. 8 is a structural diagram of the present embodiment in which a module is formed including the module circuit 20 of FIG.
  • FIG. 9 is a perspective view of a circuit device which is a modification of the second embodiment of the present invention and is realized by using the IGBT and the diode shown in FIG. 4A for the pattern of the PWM cyclo-converter shown in FIG. 3D. .
  • FIG. 10 is a structural diagram of the present embodiment in which a module is formed including the module circuit 30 of FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • Figure 2 is a circuit diagram showing the three-phase three-level inverter.
  • Figure 2 (a) shows the main circuit of the three-phase three-level inverter
  • Figure 2 (b) shows the three-phase three-level inverter circuit.
  • FIG. 2 (c) is a circuit diagram illustrating an example of a three-phase three-level inverting braking circuit portion, illustrating an example of an input-side rectifying portion.
  • terminal P is the positive terminal and terminal N is the negative terminal.
  • the output of the rectifier shown in Fig. 2 (b) is connected to the terminals P and N, and the rectified voltage obtained by regulating the AC voltage is applied between the terminals P and N.
  • a series connection circuit of capacitors 1 C 1 and 1 C 2 is connected between terminals P and N, and this rectified voltage is smoothed by the series connection circuit of capacitors 1 C 1 and 1 C 2 Applied to the main circuit of the U-phase, V-phase and W-phase of the three-phase three-level inverter connected to the three-phase inverter.
  • the U-phase main circuit 1 includes freewheeling diodes 1D2, ID3, ID5, and 1D6 for IGBTs such as 1S1, 1S2, IS3, and IS4 and their respective IGBTs.
  • the first, second, third, and fourth semiconductor switches, which are connected in anti-parallel, and the cathode of the first clamp diode 1D1 are connected to the first semiconductor switch chip and the second semiconductor switch chip.
  • the node of the second clamp diode 1D4 is connected to the node between the third semiconductor switch chip and the fourth semiconductor switch chip, and the first clamp diode 1D1 And the cathode of the second clamp diode 1D4 are both connected to the connection point of the capacitors 1C1 and 1C2.
  • the main circuit 2 of the V-phase is a freewheeling diode 2D2, 2D3, 2D5, with IGBTs 2S1, 2S2, 2S3, 2S4 and their respective IGBTs.
  • the first, second, third, and fourth semiconductor switches having 2D6 connected in anti-parallel, and the cathode of the first clamp diode 2D1 are connected to the first semiconductor switch chip and the second semiconductor switch chip.
  • the node of the second clamp diode 2D4 is connected to the node between the third semiconductor switch chip and the fourth semiconductor switch chip, and the first clamp diode 2D1 And the cathode of the second clamp diode 2D4 are both connected to the connection point of the capacitors 1C1 and 1C2.
  • the W-phase main circuit 3 is also a freewheeling diode 3D2, 3D3, 3D for IGBTs 3S1, 3S2, 3S3, 3S4 and their respective IGBTs.
  • the first, second, third, and fourth semiconductor switches having anti-parallel connection of 5, 3D 6 and the cathode of the first clamp diode 3D1 are connected to the first semiconductor switch chip and the second semiconductor switch. Connected to the connection point with the switch chip, connected to the node of the second clamp diode 3D4 to the connection point between the third semiconductor switch chip and the fourth semiconductor switch chip, and connected to the first clamp diode 3D1.
  • the anode and the cathode of the second clamp diode 3D4 are both connected to the connection point between the capacitors 1C1 and 1C2.
  • Fig. 1 shows an example in which a semiconductor switch chip and a diode chip used for three-level integration are arranged and connected on the same substrate9, and the main components of the three-phase three-level integration shown in Fig. 2 are shown.
  • the circuit consists of a module that combines semiconductor switches and diode chips, which are the parts other than the capacitors 1C1 and 1C2.
  • 1S1 ⁇ : LS4, 2S1-2S4, 3S1-3S4 are semiconductor switches, 1D1-1D6, 2D1-2D6, 3D 1 to 3D 6 are diode chips, 4, 5, and 6 are input connections for P, N, and C in Fig. 2, and U, V, and W are outputs of U, V, and W in Fig. 2.
  • 1B1, 1B2, 2B1, 2B2, 3B1 3B2 are the semiconductor switch control signal connections, 1T1, IT2, 2T1, 2 ⁇ 2, 3 ⁇ 1 and 3 ⁇ 2 indicate connection parts. Each chip and connecting part are placed on the same board or aluminum plate, and if necessary, insulation treatment is performed. Each part is made of copper foil pattern as shown in the circuit diagram. Etc. to make 1 module 9 and apply to 3 level members overnight ⁇
  • diodes D 1 and D 2 of FIG. 2 (b) used in the rectifying unit are combined with the module of the above-mentioned inverting unit because the compactness can be further improved.
  • Fig. 2 (c) shows the braking resistance of the capacitors 1C1 and 1C2 R 1 indicates a braking circuit portion that consumes heat energy, and IGBT or the like is used as a semiconductor switch S 1 for flowing a current to the braking resistor R 1. It is advantageous to combine the antenna and the module with the above-mentioned module of the chamber because it is more compact.
  • FIG. 3 shows a circuit example of a PWM cycloconverter
  • Fig. 3 (a) shows one bidirectional switch BS as a unit of the circuit configuration
  • FIG. 3 (b) shows a PWM cycloconverter overnight module 10 using three bidirectional switches BS.
  • FIG. 3 (c) shows a module 20 in which the PWM cycloconverter is arranged in two parallel
  • FIG. 3 (d) shows a module 30 in which this PWM cycloconverter is arranged in three parallel.
  • Fig. 4 shows a series or parallel connection of two unidirectional semiconductor switches, such as IGBTs and GTOs (gate turn-off thyristors), to realize one bidirectional switch BS shown in Fig. 3 (a). It shows a specific circuit using a connection and further using a diode and the like.
  • IGBTs and GTOs gate turn-off thyristors
  • Fig. 4 (a) shows two IGBTs, S1 and S2, connected at each collector (connection point T2), and the nodes of diodes D1 and D2 are connected to connection point T2.
  • connection point T2 connects the power source of diode D 1 to the emitter of I GBTS 1 (connection point T 1), and connect the power source of diode D 2 to the emitter of I GBT S 2 (connection point T 3)
  • the bidirectional switch BS consists of:
  • Fig. 4 (b) shows two IGBTs S1 and S2 connected to each other (connection point T2), and two diodes D1 and D2 connected to each other. Connect and connect to connection point T2. Connect the node of diode D1 to the emitter of IGBTS1 (connection point T1), and connect the anode of diode D2 to the emitter of IGBTS2 (connection point T3).
  • This is a bidirectional switch BS.
  • Fig. 4 (b) shows a series connection circuit in which the collector of IGB TS1 is connected to the diode D1 and a series connection circuit in which the collector of IGBTS2 is connected to the diode D2.
  • the circuit is connected by the diode D 2 cathode to the IGBTS 1 emitter (connection point T 1) and the diode D 1 power source to the IGBTS 2 emitter. Then, it is a bidirectional switch BS connected in parallel (connection point T3).
  • Fig. 4 (d) shows a series connection circuit in which the EGB of IGBTS 1 and the force sword of the diode D1 are connected, and the emitter of IGBTS 2 and the cathode of the diode D2 are connected.
  • a series connection circuit is connected between the diode of diode D 2 and the collector of IGBTS 1 (connection point T 1), and is connected with the anode of diode D 1 and the core of I GBTS 2 Then, it is a two-way switch BS connected in parallel (connection point T 3).
  • FIG. 4 (e) shows a bidirectional switch BS in which S1 and S2 of GTO (gate turn-off 'thyristor) are connected in anti-parallel.
  • Figures 4 (a) to 4 (d) show IGBTs, where IGBTs are turned on when a signal is applied to the base and IGBTs are turned off when there are no more signals, while GT 0 is a IGBT. It turns on when a positive pulse is applied to the gate, continues to be on even if there is no signal at the gate, and turns off when a negative pulse is applied to the gate or when the current falls below the holding current.
  • the operation of the circuit in Fig. 4 (e) indicates that the positive When Lus is added, SI of GTO turns on.
  • SI of GTO turns on.
  • S1 turns on, current flows from T1 to S1 to T3. Then, when a negative pulse is applied to the gate or the current drops below the holding current, S1 turns off.
  • S2 turns on and a current flows through T3 ⁇ S2 ⁇ ⁇ 1 until a negative pulse is applied to the gate or the current drops below the holding current. Keep flowing.
  • the bidirectional switch BS shown in FIG. 4E is formed.
  • FIG. 5 shows the pattern of the PWM cyclo-converter of Fig. 3 (b) using three bidirectional switches BS in Fig. 4 (a), with SI and S2 of IGBT and diodes D1 and D1.
  • FIG. 6 is a perspective view of a module 10 of a bidirectional switch circuit configured by using FIG. 2, and FIG. 6 is a structural diagram of a PWM cycloconverter module according to the present invention including the module 10 of FIG.
  • IGBT 1S 11 and 1 S12 correspond to IGBT S 1 and S 2 in FIG. 4 (a), and diodes 1 D 11 and 1 D 12 in FIG. This corresponds to diodes D1 and D2 in a).
  • the connection points 1 T 1, 1 R 1, and 1 P 1 in FIG. 5 correspond to the connection points T 1, T 2, and T 3 in FIG. 4A, respectively.
  • G 11 and G 12 in FIG. 5 are gate lines for controlling 1 S 11 and 1 S 12. Exactly the same can be seen in the middle row of Figure 5, the second group of IGBTs 1S21 and 1S22, the second group of diodes 1D21 and 1D22, and the connection points of the second group. The same is true for Terminals 1 T 2 and 1 R2.
  • IGBTs 1S21 and 1S22 correspond to IGBTs S1 and S2 in Fig. 4 (a)
  • diodes 1D21 and 1D22 correspond to Fig. 4 (a).
  • the connection terminals 1T2 and 1R2 correspond to the connection points T1 and T2 in FIG. 4 (a), respectively.
  • G 21 and G 22 in FIG. 5 are gate lines that control 1 S 21 and 1 S 22.
  • the third group of IGBTs 1S31 and 1S32, the third group of diodes 1D31 and 1D32, and the third group of connection points at the bottom of Fig. 5 The same is true for 1 T 3 and 1 R 3. That is, 1S31 and 1S32 of IG II correspond to SI and S2 of IGBT in Fig. 4 (a), and diodes 1D31 and 1D32 correspond to the diodes in Fig. 4 (a). Equivalent to D 1 and D 2 The connection terminals 1 T 3 and 1 R 3 correspond to the connection points T 1 and T 2 in FIG. 4A, respectively.
  • G31 and G32 in FIG. 5 are gate lines for controlling 1S31 and 1S32.
  • FIG. 6 which is a structural diagram of the PWM cycloconverter module including the bidirectional switch circuit module of FIG. 5, 10 is a bidirectional switch circuit module, 61 is 30 input terminals, 62 is an output terminal, 63 is an insulating plate, 64 is a case, 65 is a base plate, 66 is a mounting hole, and 67 is a gate terminal.
  • cost can be reduced by applying a module in which semiconductor switch diodes are arranged and wired on the same structure such as a substrate. It can be realized without increasing the size and size.
  • FIG. 7 shows the pattern of the PWM cycloconverter in Fig. 3 (c) using six bidirectional switches BS, with SI and S2 of IGBT and diodes D1 and D2 in Fig. 4 (a).
  • FIG. 8 is a perspective view of a module 20 of the bidirectional switch circuit configured using the module, and FIG. 8 is a structural view of a PWM cycloconverter module according to the present invention including the module 20 of FIG.
  • a module 20 is obtained by connecting the modules 10 of FIG. 5 in two rows in parallel. Therefore, 1 S11 and 1 S12 of the IGBT belonging to the first module in the left column correspond to S1 and S2 of the IGBT in FIG. 4 (a), and the diode 1D in FIG. 1 1 and 1 D 12 correspond to the diodes D 1 and D 2 in FIG. 4 (a), and the connection terminals 1 T 1, 1 R 1 and 1 P 1 in FIG. The same applies to the connection points T l, ⁇ 2, and ⁇ 3.
  • FIG. 8 is a structural diagram of the PWM cycloconverter module including the bidirectional switch circuit module of FIG.
  • reference numeral 20 denotes a bidirectional switch circuit module
  • 81 denotes 30 input terminals
  • 82 denotes output terminals.
  • Reference numeral 83 denotes an insulating plate
  • 84 denotes a case
  • 85 denotes a base plate
  • 86 denotes a mounting hole
  • 87 denotes a gate terminal.
  • FIG. 9 shows the pattern of the PWM cyclo-converter of Fig. 3 (d) using nine bidirectional switches BS.
  • Fig. 4 (a) shows the SI and S2 of IGBT and diodes D1 and D2.
  • FIG. 10 is a perspective view of a module 30 of a bidirectional switch circuit configured by using FIG. 10.
  • FIG. 10 is a structural diagram of a PWM cycle opening converter module including the module 20 of FIG. 9 according to the present invention.
  • the module 30 is obtained by connecting the modules 10 of FIG. 5 in three rows in parallel. Therefore, 1S11, 1S1 2 or less of the upper first group IGBT belonging to the first module 10 in the left column, 1S21, 1S22 or less of the second group of the middle row, lower row.
  • 1S31, 1S32, etc. of the third group of IGBT, 2S11, 2S12 of the upper first group belonging to the second module 10 in the middle row the same applies to 2S21 and 2S22 and below in the second group in the middle and 2S31 and 2S32 and below in the third group in the bottom.
  • FIG. 10 which is a structural diagram of the PWM cycloconverter module including the bidirectional switch circuit module of FIG. 9, 30 is a bidirectional switch circuit module, 91 is 30 input terminals, and 92 is An output terminal, 93 is an insulating plate, 94 is a case, 95 is a base plate, 96 is a mounting hole, and 97 is a gate terminal.
  • 91 is 30 input terminals
  • 92 is An output terminal
  • 93 is an insulating plate
  • 94 is a case
  • 95 is a base plate
  • 96 is a mounting hole
  • 97 is a gate terminal.
  • PWM cycloconverter module where semiconductor switches and diodes, which are surface-mount discrete components, are mounted and wired on the same structure as the above-mentioned PWM cycloconverter module. Use is advantageous.
  • multilevel invers of three or more levels can be performed without increasing cost and size. It can be realized. If such three-level receivers are connected in multiple stages, multilevel inversion can be realized without increasing cost and size.

Abstract

L'invention concerne un cycloconvertisseur pwm et un invertisseur trois niveaux permettant de générer des sorties trois niveaux ayant une configuration de circuit complexe ce qui le rend onéreux et encombrant si l'on fait appel aux modules de commutation de semi-conducteur commercialisés à ce jour. Ce problème peut être pallié grâce à cette invention qui concerne une puce à diodes de commutation à semi-conducteur formant le circuit principal d'un investisseur trois niveaux ou d'un cycloconvertisseur pwm intégrée dans un seul bras. Ces bras sont montés en parallèle au niveau de trois points, P, N et neutre sur la même structure.
PCT/JP2000/005183 1999-08-03 2000-08-02 Investisseur trois niveaux ou cycloconvertisseur pwm WO2001010008A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11220206A JP2001045772A (ja) 1999-08-03 1999-08-03 ３レベルインバータまたはｐｗｍサイクロコンバータ
JP11/220206 1999-08-03

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WO2004105220A2 (fr) * 2003-05-16 2004-12-02 Ballard Power Systems Corporation Systeme de module de puissance
CN103597728A (zh) * 2011-05-31 2014-02-19 日产自动车株式会社 电力变换装置
CN103597727A (zh) * 2011-05-31 2014-02-19 日产自动车株式会社 电力变换装置
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JP5899947B2 (ja) * 2012-01-18 2016-04-06 富士電機株式会社 パワー半導体モジュールおよび電力変換装置
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JP5926835B2 (ja) * 2015-04-23 2016-05-25 株式会社東芝 電力変換装置
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WO2004105220A2 (fr) * 2003-05-16 2004-12-02 Ballard Power Systems Corporation Systeme de module de puissance
WO2004105220A3 (fr) * 2003-05-16 2005-03-31 Ballard Power Systems Systeme de module de puissance
CN103597728A (zh) * 2011-05-31 2014-02-19 日产自动车株式会社 电力变换装置
CN103597727A (zh) * 2011-05-31 2014-02-19 日产自动车株式会社 电力变换装置
CN103650317A (zh) * 2011-05-31 2014-03-19 日产自动车株式会社 电力变换装置
CN103597728B (zh) * 2011-05-31 2016-01-20 日产自动车株式会社 电力变换装置
CN103650317B (zh) * 2011-05-31 2016-06-22 日产自动车株式会社 电力变换装置
CN106921305A (zh) * 2015-12-25 2017-07-04 富士电机株式会社 三电平功率转换电路
CN106921305B (zh) * 2015-12-25 2020-08-25 富士电机株式会社 三电平功率转换电路

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