JPS5752386A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5752386A
JPS5752386A JP55127242A JP12724280A JPS5752386A JP S5752386 A JPS5752386 A JP S5752386A JP 55127242 A JP55127242 A JP 55127242A JP 12724280 A JP12724280 A JP 12724280A JP S5752386 A JPS5752386 A JP S5752386A
Authority
JP
Japan
Prior art keywords
chips
substrates
diode chips
rectifier
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55127242A
Other languages
Japanese (ja)
Inventor
Makio Sei
Shoichi Kawamata
Tsunehiro Endo
Fumio Tajima
Kunio Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55127242A priority Critical patent/JPS5752386A/en
Publication of JPS5752386A publication Critical patent/JPS5752386A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Control Of Ac Motors In General (AREA)

Abstract

PURPOSE:To reduce stray inductance, by providing a plurality of heat-diffusing substrates on a panel, mounting parts for a rectifier and an inverter on them, and making them for common potential terminals via substrated diodes. CONSTITUTION:Heat-diffusing substrates 102 and 103 are provided via an insulator 101 on a panel 100. A rectifier 130 is composed of diode chips 114, 115, 120, and 121. An inverter 120 is composed of chip capacitors, chip resistors, diode chips, and transistor chips 48 and 94. Diode chips and transistor chips are formed in particular shapes, and the substrates 102 and 103 are made for common potential terminals via diodes. Therefore, connections between elements can be shortened by dividing into positive and negative potential sides. Stray inductance can be kept minimum.
JP55127242A 1980-09-16 1980-09-16 Semiconductor device Pending JPS5752386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55127242A JPS5752386A (en) 1980-09-16 1980-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55127242A JPS5752386A (en) 1980-09-16 1980-09-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5752386A true JPS5752386A (en) 1982-03-27

Family

ID=14955220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55127242A Pending JPS5752386A (en) 1980-09-16 1980-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752386A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939059A (en) * 1982-08-27 1984-03-03 Hitachi Ltd Semiconductor device
JPS6218982A (en) * 1985-07-15 1987-01-27 Hitachi Ltd Inverter
JPS6281983A (en) * 1985-10-02 1987-04-15 Hitachi Ltd Main circuit of current type inverter
JPH01133572A (en) * 1987-11-16 1989-05-25 Sanyo Electric Co Ltd Single-phase frequency conversion circuit
EP0710983A2 (en) * 1994-11-07 1996-05-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Bridge module
WO2001010008A1 (en) * 1999-08-03 2001-02-08 Kabushiki Kaisha Yaskawa Denki Three-level inverter or pwm cycloconverter
WO2004073065A1 (en) * 2003-02-14 2004-08-26 Hitachi, Ltd. Integrated circuit for driving semiconductor device and power converter

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939059A (en) * 1982-08-27 1984-03-03 Hitachi Ltd Semiconductor device
JPS6218982A (en) * 1985-07-15 1987-01-27 Hitachi Ltd Inverter
JPS6281983A (en) * 1985-10-02 1987-04-15 Hitachi Ltd Main circuit of current type inverter
JPH01133572A (en) * 1987-11-16 1989-05-25 Sanyo Electric Co Ltd Single-phase frequency conversion circuit
EP0710983A2 (en) * 1994-11-07 1996-05-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Bridge module
EP0710983A3 (en) * 1994-11-07 1997-11-26 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Bridge module
WO2001010008A1 (en) * 1999-08-03 2001-02-08 Kabushiki Kaisha Yaskawa Denki Three-level inverter or pwm cycloconverter
WO2004073065A1 (en) * 2003-02-14 2004-08-26 Hitachi, Ltd. Integrated circuit for driving semiconductor device and power converter
US7763974B2 (en) 2003-02-14 2010-07-27 Hitachi, Ltd. Integrated circuit for driving semiconductor device and power converter
US7973405B2 (en) 2003-02-14 2011-07-05 Hitachi, Ltd. Integrated circuit for driving semiconductor device and power converter

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