JPS577148A - Semiconductor module - Google Patents

Semiconductor module

Info

Publication number
JPS577148A
JPS577148A JP8181580A JP8181580A JPS577148A JP S577148 A JPS577148 A JP S577148A JP 8181580 A JP8181580 A JP 8181580A JP 8181580 A JP8181580 A JP 8181580A JP S577148 A JPS577148 A JP S577148A
Authority
JP
Japan
Prior art keywords
substrate
sub
soldered
cracking
lowering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8181580A
Other languages
Japanese (ja)
Inventor
Shigeo Hamamoto
Takayuki Kitamura
Yoshio Takagi
Yasunori Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8181580A priority Critical patent/JPS577148A/en
Publication of JPS577148A publication Critical patent/JPS577148A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent the cracking of a substrate due to a temperature cycle test and the lowering of dielectric strength by dividing the ceramic substrate into several parts. CONSTITUTION:The substrate 2 is divided into a main substrate 21 and sub substrates 22 and 23. A transistor 8 and a diode 9 are mounted on the main substrate 21 and an emitter electrode 5 is soldered on the sub substrate 22. A base terminal 3 and a common terminal 6 are soldered on the sub substrate 23. A thick film interconnection is applied on the surface of the respective substrates. With such an arrangement, a simple technique, dividing an insulating plate bonded on a radiation plate 1, can prevent the lowering of the dielectric strength due to cracking of the substrate in a temperature cycle test thereby improving the reliability of the device.
JP8181580A 1980-06-16 1980-06-16 Semiconductor module Pending JPS577148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8181580A JPS577148A (en) 1980-06-16 1980-06-16 Semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8181580A JPS577148A (en) 1980-06-16 1980-06-16 Semiconductor module

Publications (1)

Publication Number Publication Date
JPS577148A true JPS577148A (en) 1982-01-14

Family

ID=13756986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8181580A Pending JPS577148A (en) 1980-06-16 1980-06-16 Semiconductor module

Country Status (1)

Country Link
JP (1) JPS577148A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292653U (en) * 1985-11-29 1987-06-13
US5686758A (en) * 1994-05-31 1997-11-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having integral structure of case and external connection terminals

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536915A (en) * 1978-09-04 1980-03-14 Hitachi Ltd Electronic circuit and its manufacturing
JPS5539682A (en) * 1978-09-12 1980-03-19 Sanyo Electric Co Ltd Assembling method of power semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536915A (en) * 1978-09-04 1980-03-14 Hitachi Ltd Electronic circuit and its manufacturing
JPS5539682A (en) * 1978-09-12 1980-03-19 Sanyo Electric Co Ltd Assembling method of power semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292653U (en) * 1985-11-29 1987-06-13
US5686758A (en) * 1994-05-31 1997-11-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having integral structure of case and external connection terminals

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