WO2000020654A1 - Corps de cible de pulverisation realise par frittage d'oxyde - Google Patents
Corps de cible de pulverisation realise par frittage d'oxyde Download PDFInfo
- Publication number
- WO2000020654A1 WO2000020654A1 PCT/JP1999/005274 JP9905274W WO0020654A1 WO 2000020654 A1 WO2000020654 A1 WO 2000020654A1 JP 9905274 W JP9905274 W JP 9905274W WO 0020654 A1 WO0020654 A1 WO 0020654A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- oxide
- target assembly
- oxide sintered
- sintered body
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Definitions
- the present invention relates to an oxide sintered compact sputtering target assembly that can reduce the amount of expensive target raw materials made of oxide sintered compacts and the like, and can easily produce large-sized products that are difficult to integrally mold.
- an oxide thin film for forming a transparent conductive film such as ITO is formed by sputtering.
- This magnet sputter device can form films at high speed and low temperature, but because the magnetic field traps the plasma, the sputter ion gas concentrates only on a certain part of the target, which causes the target to be localized. The phenomenon of erosion occurred.
- this localized erosion is called an erosion, but when the erosion is localized, there is a disadvantage that most of the target remains unused.
- the target when the eroded portion due to sputtering reaches a position near the backing plate (a certain depth), the target has reached the end of its life and needs to be replaced. In other words, as the local erosion progresses, it is likely that the local erosion will determine the lifetime of the entire target.
- the target such as ITO for forming the transparent conductive film is often a large area, the local erosion as described above has caused the use efficiency of the target to be greatly reduced.
- a ceramic star target for magnetron sputtering is divided into an erosion region and a non-erosion region.
- a target having a body shape has been proposed (Japanese Patent Application Laid-Open No. Hei 6-172921).
- a doughnut-shaped transparent conductive film sputtering target in which a material is concentrated in an erosion region Japanese Patent Application Laid-Open No. 1-290764.
- the two types of improved targets are the target erosion target thickness. Although it has a certain effect in the sense that it increases the life of the target, it is necessary to form a step at the center and the edge even though the target has a body shape. Cracks may occur during processing steps such as pressure sintering and grinding. Therefore, they are effective for relatively small targets, but are not suitable for targets requiring a large area.
- the present invention enables efficient sputtering capable of coping with local erosion due to magnet opening sputtering, and does not affect sputtering performance, and is an expensive type of oxide sintered body such as ITO.
- An object of the present invention is to provide a sputtering target assembly of an oxide sintered body of ITO or the like, which can reduce the consumption of one raw material as much as possible and can easily produce a large product that is difficult to integrally mold.
- the oxide sintered body target assembly for magnet sputtering no oxide sintered body exists in the central non-erosion portion, and the backing of the central non-erosion portion does not exist.
- the surface of the plate constitutes the target material
- Oxide-sintered-body target assembly characterized in that the respective parts of the oxide-sintered-body target divided so that Consists of two rectangular end portions in a plan view and one or more pairs of parallel portions disposed between them, and a central non-erosion region in which no oxide sintered body exists between these two end portions and the parallel portions.
- Both ends of the rectangle have a horseshoe-shaped thick part and a thin part around it, and the thick part and the thin part formed in the parallel part at the time of assembling the oxide sintered body target
- the oxide sintered compact sputtering target assembly as described in 2 above characterized in that it is aligned with the ends of the thin portion and the end of the thin portion, respectively.
- the cross-sectional shape of the thick portion is substantially trapezoidal. Wherein the average slope of the slope is not less than 5 ° and less than 90 °, wherein the oxide sintered compact sputtering target assembly according to any one of the above items 1 to 3,
- the oxide sintered compact sputtering target assembly according to any one of the above items 1 to 4, wherein the assembly has one kind of continuous or discontinuous slope.
- the distance from the virtual intersection between the erosion profile and the slope of the target having a substantially trapezoidal thick part and the top surface of the thick part is 5 mm or less.
- FIG. 1 is an external view explanatory view of an oxide sintered compact sputtering target assembly such as ITO of the present invention.
- FIG. 2 is a schematic explanatory view (a) to (c) showing various examples of the cross-sectional shape of a thick section of a target of the present invention, that is, a race track.
- Fig. 3 shows (d) to (f).
- Fig. 4 is the same as (g) to (i).
- FIG. 5 is an explanatory view of a target cross section showing a profile of a target having an erosion profile when a flat target is sputtered and a trapezoidal thick portion of the present invention.
- FIG. 6 is an explanatory view showing an example in which a corner is rounded so as to form a gentle curved surface, and the inclined portion is curved.
- the average particle size is 2 ⁇ m.
- the tin oxide powder having the same particle diameter as the m powder of zinc oxide is weighed so as to have a weight ratio of 90:10, and a molding binder is added thereto and mixed uniformly. Next, the mixed powder is filled in a mold, pressed, and sintered at a high temperature.
- ITO targets mainly contain at least 70% by weight of indium oxide and tin oxide.
- a third component may be added in addition to the above components. Good.
- the particle sizes and the mixing ratios of the indium oxide powder and the tin oxide powder in the ITO sputtering target assembly are merely examples, and are not limited to these in the present invention.
- the present invention is applicable not only to ordinary ITO but also to all oxide sintered body target materials such as ZnO-based, InzOs-ZnO-based, and Mg ⁇ -based materials.
- the present invention includes all of them.
- the ITO sputtering target sintered body obtained as described above is ground by a surface grinder to obtain a material for an ITO target assembly part.
- the surface of the ITO target assembly part is polished and smoothed with a sandpaper or a polishing cloth.
- Sandblasting may be used in this finishing step. For example, by using glass beads, alumina beads, zirconia beads, or the like as a blast material, it is possible to reduce irregularities having edges on a target surface and to remove grinding dust between these irregularities.
- FIG. 1 shows the appearance of the ITO sputtering target assembly produced in this way.
- the ITO target assembly 1 is composed of rectangular end portions 3 and a pair or a plurality of pairs of parallel portions 4 interposed between the rectangular end portions 3 when viewed in a plan view. Assemble so that a central non-equilibrium part where no ITO is present is formed.
- the race track of this assembly has a substantially elliptical planar shape.
- the IT target assembly 1 consists of a total of four parts including both ends 3 when the parallel part 4 is a pair, and a total of six parts when the parallel part 4 is two pairs. You.
- the parallel part 4 can be further composed of a plurality of pairs of assembling parts.
- the race track may be curved at a constant curvature, but the assembly in this case is limited to an elliptical shape to that curvature.
- a metal I ⁇ solder 7 is applied on the entire surface of the backing plate 2, and the above-mentioned I ⁇ ⁇ ⁇ target assembly 1 is mounted thereon and joined. Therefore, the metal I ⁇ solder 7 is exposed at the central non-erosion portion where ⁇ ⁇ ⁇ does not exist.
- brazing materials can be used depending on the film forming conditions (type of thin film).
- an element constituting the target material or a filter medium containing the element constituting the target material can be used.
- these brazing materials can contaminate the film formed by sputtering.
- the use of materials that are not required is a condition, but as long as the conditions are satisfied, there are no particular restrictions on the materials.
- the rectangular end portions 3 of the ITO target assembly 1 each have a horseshoe-shaped thick portion 5 and a thin portion 6 around the thick portion.
- the parallel portion 4 also has a parallel thick portion 5 and a thin portion 6 sandwiching the same, and when assembling the IT target of the parallel portion 4, the horseshoe-shaped thick portion 5 at both end portions 3 is formed.
- the end of the thin part 6 and the thick part 5 of the parallel part 4 and the end of the thin part 6 or the thick part 5 of the parallel part 4 and the end of the thin part 6 are aligned with each other to form an endless race. Form a track.
- the end portion 3 of the target assembly 1 has a horseshoe-shaped thick portion 5 and a thin portion 6 surrounding it as a whole.
- the advantage is that only one molding die is required. Also, as shown in the figure, since it has a relatively compact shape, it does not crack during sintering or handling, and greatly improves the processing yield.
- the parallel portions 4 made of one or more pairs of the ITO target assembly 1 can also have basically the same shape. As in the case of the above-mentioned end portions 3, only one powder molding die is required, no cracking occurs during sintering or handling, and the processing yield is greatly improved.
- the ITO target assembly As described above, here we describe the ITO target assembly. As described above, it goes without saying that the present invention can be applied to all oxide sintered body target materials.
- the filter material applied to the above-described backing plate and the central non-erosion portion can be appropriately selected according to the type of the oxide sintered body target material.
- the cross-sectional shape of the thickened portion 5, ie the race track is substantially trapezoidal, and both slopes 8 of which are 5 ° or more and less than 90 °, preferably 10 °.
- the angle is preferably not less than 60 ° and more preferably not less than 15 ° and not more than 45 °.
- the most easily sputtered portion of the target, that is, the thick portion 5 is intensively sputtered.
- the erosion part is mostly formed also on the inclined surface 8, the amount of erosion is smaller than that of the thick part 5, and the amount decreases as approaching the edge.
- the inclined surface can reduce the local progress of erosion.
- the thin part 6 may also be sputtered, but the amount is small.
- the width of the thin portion 6 is designed in consideration of the safety of the sputtered area.
- FIG. 2 (a) shows a cross-sectional shape of the target in which the thick portion is substantially trapezoidal. The center is a thick part and both ends are thin parts.
- FIGS. 2 (b) to (c), FIGS. 3 (d) to ( ⁇ ), and FIGS. 4 (g) to (i) show the cross-sectional shapes of the target race track as another example of the present invention. Shown in
- the top surface (top surface) of the thick part of the target in Fig. 2 (b) is flat, and the slope (straight slope) is continuously inclined to the edge of the target. If the slope or arc surface continues to the edge of the target in this way, the thin portion may not be formed.However, in consideration of safety, a thin portion is formed around the slope or arc surface. Is also good.
- the top surface of the thick part of the target shown in Fig. 2 (c) is flat, and both ends are continuously inclined at the upper arc surface, continue smoothly to the edge of the target, and terminate there.
- the top surface of the thick part of the target shown in Fig. 3 (e) is flat, and both ends have slopes (straight slopes) that continuously slope to the edge of the target.
- the top surface of the thick part of the target shown in Fig. 3 (f) is flat, and both ends are lower arc surfaces and continue continuously to the edge of the target.
- the cross section of the target shown in Fig. 4 (g) is a convex upper arc surface, which has no flat part and continues to the outer edge of the target.
- Fig. 4 (h) shows an example in which the cross section of the target decreases stepwise (in this case, two steps) from the thick part to the thin part.
- the joining of each step is an example having a vertical surface.
- the cross section of the target shown in Fig. 4 (i) is an example having a discontinuous surface that is connected from the thick part to the thin part by an inclined surface and a vertical surface.
- FIGS. 2 to 4 show examples other than the trapezoidal thick portions (including those approximating the trapezoids).
- the thick part, thin part, and inclined part (surface) between them are selected from the above-mentioned straight slope, upper arc plane, lower arc plane, a combination of these, or a combination of these planes or vertical planes. It can be created as appropriate using at least one continuous or discontinuous surface.
- FIG. 6 is a typical example of this, in which the corners are rounded and the inclined portions are curved, and the hatched portions in FIG. C indicate the target material.
- chamfering the ridge or corner at each intersection of the horizontal plane, the inclined plane, the arc plane, and the vertical plane with R 0.1 mm or more is effective in preventing the above-described defects.
- FIG. 5 is an explanatory cross-sectional view of a target showing an erosion opening file when a flat target is sputtered and a target profile having a trapezoidal thick portion according to the present invention.
- the horizontal axis represents the target dimensions (mm), and the vertical axis represents the erosion depth (Erosion Depth) or the height (mm) of the trapezoidal thick part.
- the center line average surface roughness Ra of the sputtered surface of the assembly 1 of the oxide sintered body target such as I ⁇ R is 4 ⁇ m or less, preferably 1 ⁇ m or less, and the relative density of the target is 80%. As described above, the content is preferably 90% or more, and the density distribution of the target is 0.04% or less, and preferably 0.02% or less.
- the target assembly 1 of an oxide sintered body such as ITO is composed of a plurality of divided parts, it is necessary to avoid variations in the manufacturing process. the above In the range of the numerical value of the above, a preferable oxide sintered compact sputtering target assembly 1 having I ⁇ or the like is obtained. In particular, when the target density distribution is in the above range, a uniform sputter film can be obtained.
- Industrial applicability-Enables efficient sputtering capable of coping with localized erosion by magnetron sputtering, and targets oxide sinters such as I ⁇ which are expensive without affecting sputtering performance
- oxide sintered compact sputtering target assembly that can reduce the use of raw materials as much as possible and can easily manufacture large-sized products that are difficult to integrally mold.
- Both ends of the oxide sintered body target assembly such as ITO, have a horseshoe-shaped thick part and a thin part around it are easy to work because they are almost rectangular in plan view.
- the advantage is that only one mold is required.
- the parallel portions made of one or more pairs of oxide sintered body target assemblies such as ITO can have basically the same shape. As in the case of both ends, only one powder molding die is required.Since it has a relatively simple shape, no cracking occurs during sintering and handling, and the processing yield is large. To improve.
- the shape of the oxide sintered body target assembly such as ⁇ can be made larger, and an oxide sintered body such as ITO can be formed according to the film forming conditions. It has the feature that the dimensions of the union target assembly can be easily changed (variable).
- the cross-sectional shape of the race track is almost trapezoidal, and erosion occurs intensively in the thick part of the trapezoid.
- the sloping surface also partially becomes an erosion portion, but the sloping surface can ease local progress.
- the cross-sectional shape of the race track may be changed, for example, between a thick part and a thin part, by a straight slope, an upper arc surface, a lower arc surface, a combination thereof, or a plane or perpendicular to these. It can be deformed to have at least one continuous or discontinuous slope selected from a combination with a surface.
- the non-erosion portion located at the center of the race track is sputtered with an oxide sinter such as a filter material containing elements that constitute the target material such as metal In braze or elements that constitute the target material. Since the material (metal) that does not contaminate the thin film is exposed, even if the central non-erosion portion is sputtered, only harmless materials such as metal In come flying. Can be prevented from becoming a source of contamination in the oxide film formation. Thus, a sputtered film of stable quality can be obtained by a simple process.
- an oxide sinter such as a filter material containing elements that constitute the target material such as metal In braze or elements that constitute the target material. Since the material (metal) that does not contaminate the thin film is exposed, even if the central non-erosion portion is sputtered, only harmless materials such as metal In come flying. Can be prevented from becoming a source of contamination in the oxide film formation. Thus, a sputtered film of stable quality can be obtained by a simple process
- the thick portion of the oxide sintered body target such as IT ⁇ is intensively arranged corresponding to the erosion profile, thereby reducing waste as a whole and sintering the oxide such as I ⁇ .
- Significant efficiency of body targets and reduction of raw materials can be achieved.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020007005995A KR100332476B1 (ko) | 1998-10-06 | 1999-09-28 | 산화물 소결체 스팟터링 타겟트 조립체 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10297571A JP3076311B2 (ja) | 1998-10-06 | 1998-10-06 | 酸化物焼結体スパッタリングターゲット組立体 |
JP10/297571 | 1998-10-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000020654A1 true WO2000020654A1 (fr) | 2000-04-13 |
Family
ID=17848284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1999/005274 WO2000020654A1 (fr) | 1998-10-06 | 1999-09-28 | Corps de cible de pulverisation realise par frittage d'oxyde |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3076311B2 (ja) |
KR (1) | KR100332476B1 (ja) |
CN (1) | CN1238552C (ja) |
TW (1) | TW448237B (ja) |
WO (1) | WO2000020654A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020069603A (ko) * | 2001-02-27 | 2002-09-05 | 임조섭 | 마그네트론 스퍼터링 장치용 스퍼터링 타겟 |
JP2003264307A (ja) * | 2002-03-11 | 2003-09-19 | Sharp Corp | 薄膜太陽電池及びその製造方法 |
US7635440B2 (en) * | 2003-03-04 | 2009-12-22 | Nippon Mining & Metals Co., Ltd. | Sputtering target, thin film for optical information recording medium and process for producing the same |
US7652223B2 (en) * | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
JP4882332B2 (ja) * | 2005-10-11 | 2012-02-22 | 大日本印刷株式会社 | スパッタ装置 |
DE102006009749A1 (de) * | 2006-03-02 | 2007-09-06 | FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH | Targetanordnung |
JP2009127125A (ja) * | 2007-11-28 | 2009-06-11 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲット材およびこれから得られるスパッタリングターゲット |
CN202322993U (zh) * | 2011-11-21 | 2012-07-11 | 深圳市华星光电技术有限公司 | 透明导电层的溅射靶材构造 |
CN104532198A (zh) * | 2014-12-16 | 2015-04-22 | 张家港市铭斯特光电科技有限公司 | 一种磁控溅射镀膜用阴极 |
CN105734508B (zh) * | 2016-04-08 | 2019-08-16 | 有研亿金新材料有限公司 | 一种氧化物靶材及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4428816A (en) * | 1983-05-25 | 1984-01-31 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
JPH06306597A (ja) * | 1993-04-23 | 1994-11-01 | Mitsubishi Materials Corp | マグネトロンスパッタリング用Tiターゲット材 |
JPH06306596A (ja) * | 1993-04-23 | 1994-11-01 | Mitsubishi Materials Corp | マグネトロンスパッタリング用Siターゲット材 |
JPH08176809A (ja) * | 1994-12-21 | 1996-07-09 | Asahi Glass Co Ltd | スパッタリング用ターゲットおよびその再利用方法 |
JPH09111445A (ja) * | 1995-10-12 | 1997-04-28 | Dainippon Printing Co Ltd | スパッタリングターゲット |
-
1998
- 1998-10-06 JP JP10297571A patent/JP3076311B2/ja not_active Expired - Lifetime
-
1999
- 1999-09-28 WO PCT/JP1999/005274 patent/WO2000020654A1/ja active IP Right Grant
- 1999-09-28 KR KR1020007005995A patent/KR100332476B1/ko active IP Right Grant
- 1999-09-28 CN CNB998017779A patent/CN1238552C/zh not_active Expired - Lifetime
- 1999-09-28 TW TW088116588A patent/TW448237B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4428816A (en) * | 1983-05-25 | 1984-01-31 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
JPH06306597A (ja) * | 1993-04-23 | 1994-11-01 | Mitsubishi Materials Corp | マグネトロンスパッタリング用Tiターゲット材 |
JPH06306596A (ja) * | 1993-04-23 | 1994-11-01 | Mitsubishi Materials Corp | マグネトロンスパッタリング用Siターゲット材 |
JPH08176809A (ja) * | 1994-12-21 | 1996-07-09 | Asahi Glass Co Ltd | スパッタリング用ターゲットおよびその再利用方法 |
JPH09111445A (ja) * | 1995-10-12 | 1997-04-28 | Dainippon Printing Co Ltd | スパッタリングターゲット |
Non-Patent Citations (1)
Title |
---|
Toshiba Gijutsu Kokaishu, Vol. 15, No. 56, (1997), page 61 * |
Also Published As
Publication number | Publication date |
---|---|
KR100332476B1 (ko) | 2002-04-13 |
JP3076311B2 (ja) | 2000-08-14 |
CN1287578A (zh) | 2001-03-14 |
TW448237B (en) | 2001-08-01 |
JP2000119847A (ja) | 2000-04-25 |
KR20010032706A (ko) | 2001-04-25 |
CN1238552C (zh) | 2006-01-25 |
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