TW448237B - Oxide sintered compact sputtering target assembly - Google Patents

Oxide sintered compact sputtering target assembly Download PDF

Info

Publication number
TW448237B
TW448237B TW088116588A TW88116588A TW448237B TW 448237 B TW448237 B TW 448237B TW 088116588 A TW088116588 A TW 088116588A TW 88116588 A TW88116588 A TW 88116588A TW 448237 B TW448237 B TW 448237B
Authority
TW
Taiwan
Prior art keywords
sputtering target
layer portion
thick layer
sintered body
oxide sintered
Prior art date
Application number
TW088116588A
Other languages
English (en)
Chinese (zh)
Inventor
Keiichi Ishizuka
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Application granted granted Critical
Publication of TW448237B publication Critical patent/TW448237B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW088116588A 1998-10-06 1999-09-28 Oxide sintered compact sputtering target assembly TW448237B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10297571A JP3076311B2 (ja) 1998-10-06 1998-10-06 酸化物焼結体スパッタリングターゲット組立体

Publications (1)

Publication Number Publication Date
TW448237B true TW448237B (en) 2001-08-01

Family

ID=17848284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088116588A TW448237B (en) 1998-10-06 1999-09-28 Oxide sintered compact sputtering target assembly

Country Status (5)

Country Link
JP (1) JP3076311B2 (ja)
KR (1) KR100332476B1 (ja)
CN (1) CN1238552C (ja)
TW (1) TW448237B (ja)
WO (1) WO2000020654A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020069603A (ko) * 2001-02-27 2002-09-05 임조섭 마그네트론 스퍼터링 장치용 스퍼터링 타겟
JP2003264307A (ja) * 2002-03-11 2003-09-19 Sharp Corp 薄膜太陽電池及びその製造方法
KR100753328B1 (ko) * 2003-03-04 2007-08-29 닛코킨조쿠 가부시키가이샤 스퍼터링 타겟트, 광 정보기록 매체용 박막 및 그 제조방법
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
JP4882332B2 (ja) * 2005-10-11 2012-02-22 大日本印刷株式会社 スパッタ装置
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
JP2009127125A (ja) * 2007-11-28 2009-06-11 Mitsui Mining & Smelting Co Ltd スパッタリングターゲット材およびこれから得られるスパッタリングターゲット
CN202322993U (zh) * 2011-11-21 2012-07-11 深圳市华星光电技术有限公司 透明导电层的溅射靶材构造
CN104532198A (zh) * 2014-12-16 2015-04-22 张家港市铭斯特光电科技有限公司 一种磁控溅射镀膜用阴极
CN105734508B (zh) * 2016-04-08 2019-08-16 有研亿金新材料有限公司 一种氧化物靶材及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428816A (en) * 1983-05-25 1984-01-31 Materials Research Corporation Focusing magnetron sputtering apparatus
JP2720755B2 (ja) * 1993-04-23 1998-03-04 三菱マテリアル株式会社 マグネトロンスパッタリング用Ｔｉターゲット材
JP2917743B2 (ja) * 1993-04-23 1999-07-12 三菱マテリアル株式会社 マグネトロンスパッタリング用Ｓｉターゲット材
JPH08176809A (ja) * 1994-12-21 1996-07-09 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその再利用方法
JPH09111445A (ja) * 1995-10-12 1997-04-28 Dainippon Printing Co Ltd スパッタリングターゲット

Also Published As

Publication number Publication date
KR100332476B1 (ko) 2002-04-13
CN1238552C (zh) 2006-01-25
CN1287578A (zh) 2001-03-14
JP2000119847A (ja) 2000-04-25
KR20010032706A (ko) 2001-04-25
JP3076311B2 (ja) 2000-08-14
WO2000020654A1 (fr) 2000-04-13

Similar Documents

Publication Publication Date Title
TW448237B (en) Oxide sintered compact sputtering target assembly
US7316763B2 (en) Multiple target tiles with complementary beveled edges forming a slanted gap therebetween
TWI289607B (en) Target tiles in a staggered array
KR100730243B1 (ko) 대면적 스퍼터링 타겟의 탄성중합체 본딩
US20060266639A1 (en) Sputtering target tiles having structured edges separated by a gap
TWI383060B (zh) 濺鍍靶
JPS63105963A (ja) ガラス板の真空コーティング装置
JP2007238978A (ja) スパッタ装置およびスパッタ方法
JP3863932B2 (ja) 分割ターゲットを用いたマグネトロンスパッタリング方法
TW201202456A (en) Sputtering device
KR100583323B1 (ko) 스퍼터링 타겟 및 그 제조 방법
JP4821999B2 (ja) シリコンターゲット材
JP2001011617A (ja) スパッタリングターゲット
JPH1161395A (ja) Ｉｔｏスパッタリングターゲット
CN107337355A (zh) Tft基板镀膜方法
JPS63192863A (ja) モザイク式タ−ゲツト装置
JP4161642B2 (ja) スパッタ成膜方法及びマグネトロンスパッタ装置
US11637001B2 (en) Deposition apparatus and deposition method using the same
CN218321593U (zh) 溅射设备
JP2004052082A (ja) スパッタリングターゲット組立体
CN202183001U (zh) 薄膜晶体管面板
JPH02163371A (ja) マグネトロンスパッタ装置
JP2009144234A (ja) 成膜装置及び成膜方法
JP2007107024A (ja) スパッタ装置およびターゲットプレート
JP2001355067A (ja) スパッタ成膜装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent