經濟部智慧財產局員工消費合作社印製 ^4823 7 at Β7 五、發明說明（I ) 〔本發明的技術範圍〕 本發明係有關於一種氧化物燒結體濺鍍靶組件’在不 影響濺鍍性能的前提下而可節省由ITO、ZnO系、Im〇3-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 4823 7 at Β7 V. Description of the Invention (I) [Technical Scope of the Invention] The present invention relates to an oxide sintered body sputtering target assembly without affecting the sputtering performance Can be saved under the premise of ITO, ZnO series, Im〇3-
Zn〇系、Mg〇系等的氧化物燒結體所構成之昂貴之濺鍍靶 原料的使用量，而且能夠容易地製造難以一體成型的大型 物。 [習知技術] 透明導電膜形成用之ΐτ〇、ZnO系、Im〇3-Zn〇系、 Mg〇系等的薄膜係廣泛地應用於以液晶顯示器、觸碰式面 板、EL顯示器等爲中心的顯示裝置之透明電極。於大多數 的情形下，ITO等之透明導電膜形成用氧化物薄膜係由濺 鑛所形成。 在開發濺鍍裝置之初係使用2極式濺鍍裝置。但由於 此2極式濺鍍裝置之外加電壓較高，此外，尙有基板溫度 上昇、薄膜形成速度慢等缺點。是以，乃著手於3極式或 4極式濺鍍裝置等的硏究或高頻濺鍍裝置等的開發，但其 結果都不夠理想。 有鑑於此種情況，近來乃開發一種磁控濺鍍裝置，係 於濺鍍靶之內側配製磁鐵，藉由此磁鐵所發出的磁束來控 制電漿，以促使電離之離子化氣體集中於濺鍍靶，從而提 昇濺鍍效率。此已成爲現在的ITO薄膜等之透明導電膜形 成用濺鍍裝置的主流β 此磁控濺鍍裝置雖於高速、低溫的狀況下進行薄膜的 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---— —— — —--1 !* ---I ---—訂-----I---線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 4 482 3 7 A7 B7 五、發明說明（>·) 形成，但受到磁場的影響電漿將被侷限住，造成濺鍍離子 氣體僅集中於濺鍍靶之特定部位，從而發生濺鍍靶遭受局 部侵蝕的現象。 一般而言，此種受到局部侵蝕之部份係被稱爲濺蝕部 ，如此般，若此濺蝕部僅發生於局部的地方，則有留下之 濺鍍靶大部分未被使用到的缺點。 亦即，當由濺鍍造成的濺蝕部分到達底板之附近位置 (某一深度）時，代表該濺鍍靶的壽命已盡而必需更換。 換言之，若濺鍍係發生於局部的濺蝕部，則該局部的濺飽 部便決定了濺鍍靶全體之壽命。 由於形成透明導電膜的ITO等濺鍍靶多爲大面積之物 ，結果，如上述之局部的侵蝕將會成爲濺鍍靶之使用效率 大幅地降低的原因。 爲了解決該等問題，乃提出有一種一體型之濺鍍靶（ 特開平6-172991號公報），係將磁控濺鍍用陶瓷濺鍍靶區 分爲灑蝕區域與非濺蝕區域’並於濺蝕區域形成較厚之材 料、於非濺蝕區域形成較薄之材料。另外，也提出了一種 甜甜圏型之透明導電膜用濺鍍靶（特開平1-29764號公報 )，係將材料集中配置於濺蝕區域。 雖然上述二種改良型濺鍍靶意欲藉由增加局部的濺飩 部之濺鍍靶的厚度以延長濺鍍靶之壽命，也確實有相當的 效果，然而，姑且不論濺鍍靶是否爲一體型，由於必須在 中心部或周緣部彤成落差，故在製造過程中，亦即於加壓 燒結或硏磨等加工過程中，有發生裂縫之虞。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I. 1---------I---^ . I------------ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4482 3 7 A7 一 ____B7 五、發明說明（七） 因此’該等改良方式雖在較小型的濺鍍靶上有其效用 ，卻有不適用於需要大面積之濺鍍靶的缺點。 〔發明所欲解決之課題〕 本發明係提供一種ITO等之氧化物燒結體濺鍍靶組件 ’其可對應由磁控濺鍍而引起之局部的濺蝕而可有效率地 進行濺鍍’而在不影響靶性能的前提下儘量節省ITO等氧 化物燒結體之昂貴的濺鍍靶原料的使用量，並且能夠容易 地製造難以一體成型大型物。 〔用以解決課題之手段〕 本發明係提供： 1 _ 一種氧化物燒結體濺鍍靶組件，係磁控濺鍍用氧 化物燒結體灑鍍靶組件；其特徵爲，於中央之非濺蝕部不 存在氧化物燒結體，而該中央之非濺蝕部之底板面係爲構 成上述濺鍍靶材之元素、或含有構成上述濺鍍靶材之元素 的焊料所被覆，又將以濺鍍靶之最易遭濺擊部分的厚度較 非濺蝕部爲厚之形成爲跑道狀的方式所分割的氧化物燒結 體濺鍍靶的各部分加以組合而成。 2.如上述1所記載的氧化物燒結體濺鍍靶組件’其 中’氧化物燒結體濺鍍靶組件就平面觀之係由矩形之兩端 部份與配置其間之一對或複數對之平行部分所構成’而於 該等兩端部分與平行部分之間係具備著無氧化物燒結體存 在的中央之非濺蝕部分》 6 本紙張尺度適用中國國家標準（CNS)A4規格（21(U 297公釐） ----I---------A'-------訂--------- (請先間讀背面之注意事項再填寫本頁> 44S237 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（#) 3 ·如上述2所記載的氧化物燒結體濺鍍靶組件，其 中，矩形之兩端部份分別具備馬蹄形之厚層部與其周圍之 薄層部，而於平行部份所形成之厚層部與薄層部在組合氧 化物燒結體濺鍍靶時，係和上述馬蹄形之厚層部與薄層部 之各端部排成一線成爲跑道形狀。 4 ·如上述1〜3分別所記載的氧化物燒結體濺鍍革巴 組件，其中，厚層部之截面形狀係大致梯形，而其斜面之 平均斜度爲5°以上未滿9 0°。 5·如上述1〜4所記載的氧化物燒結體濺鍍靶組件 ，其中，厚層部與薄層部之間或於厚層部之周緣上，具備 有擇自直斜面、上弧面、下弧面或該等面之組合體，或者 是該等面與平面或垂直面之組合體中至少一種之連續或不 連續之斜面。 6 *如上述5所記載的氧化物燒結體濺鍍靶組件，其 中，成爲水平面、斜面、弧面、垂直面之各交點的稜部份 或角部係以RO.lmm以上來切角。 7·如上述5或6所記載的氧化物燒結體濺鍍靶組件 ’其中，將平板狀濺鍍靶濺擊後之濺蝕輪廓與具有大致呈 梯形之厚層部的濺鍍靶之斜面的假想交點，距離該厚層部 之頂面爲5mm以下。 8·如上述1〜7分別所記載的氧化物燒結體濺鍍靶 組件，其中，濺鍍表面之中心線平均表面粗糙度Ra爲4" m以下、濺鍍靶之相對密度爲80%以上、濺鍍靶之密度分 佈爲0.04%以內。 7 本紙張尺度適用中國國家標準（CNS)A4規格（2〗0 X 297公釐） III-----Λ--—If---訂--I I I I--I c請先閱讀背面之注意事項再填寫本頁) 4482 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（<) 〔發明之實施形態〕 在製造由氧化物燒結體所構成之濺鍍靶組件（構件） 時，如根據ITO燒結體來說明，則是秤量平均粒徑2/zm 之氧化銦粉末與同粒徑之氧化錫粉末使其重量比例成爲90 :10，再添加成形用結合劑後進行均一地混合。其次，將 此混合物塡充於金屬模具，經加壓成形後，再藉高溫燒結 以得到所需之物。 雖然通常ITO濺鍍靶係以含70重量％以上之氧化銦以 及氧化錫爲主成分，惟，爲提升透明導電膜之導電性或透 明度，在前述成分以外亦可再添加第三成分。前述ITO濺 鍍靶組裝構件之氧化銦粉末與氧化錫粉末所使用之粒徑、 配合比例僅表示其一例子，在本發明中並不受此方面之限 制。 又，在本發明方面，不僅是一般的ITO，其他如Zn〇 系、Iru〇3-ZnO系、MgO系等之氧化物燒結體濺鍍靶材料皆 可適用之，本發明中亦包含該等之物。 就前述的例子進一步地加以說明。藉由平面硏磨盤將 依前述方法所得之IT0濺鍍靶燒結體予以硏磨以做爲IT0 濺鑛靶組裝構件的材料。 於精加工過程上，係使用砂紙、硏磨布等將IT0濺鍍 靶組件構件之表面磨成平滑。在此精加工過程中亦可使用 噴砂處理。例如，藉由使用做爲噴砂材料之玻璃珠、氧化 鋁珠或氧化锆珠等，乃可減少於濺鍍靶表面之具有稜邊的 凹凸，又能夠去除該等凹凸間的硏磨屑β 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) I--I-----乂--------訂•寒 --------線 (請先閱讀背面之注意事項再填寫本頁) 44823 7 B7 五、發明說明（b ) (請先閱讀背面之注意事項再填寫本頁) 其次，採用鼓風機或水流洗淨等來進行潔淨處理。亦 可用超音波洗淨。又，亦可使用將膠帶剝下的同時去除付 著於濺鍍靶面之粒子的方法（膠帶剝離法）° 如此製成的ιτο濺鍍靶組件的外觀如圖1所示。由平 面觀察可知，ΓΓΟ濺鍍靶組裝構件1是由矩形之兩端部分3 與其間配置的一對或複數對之平行部分4所構成’以於該 等矩形之兩端部分3與平行部分4之間形成無ITO存在之 中央非濺蝕部的方式來組裝。此組件之跑道的平面形狀大 致呈橢圓狀。 若ITO濺鎪靶組件1在平行部分4爲一對，則包含兩 端部分3合計將成爲4個構件；又平行部分4爲二對時， 合計將由6個構件構成。平行部分4更可由二對以上之複 數對的組裝部分來構成。 如此般，單是增加同形狀之平行部分4就可得到較長 且大型之ITO濺鍍靶組件。其跑道雖亦能以一定的曲率加 予彎曲，惟此時的組件被局限於能配合該曲率的橢圓形。 經濟部智慧財產局員工消費合作社印製 在底板2上全面地被覆金屬In蠟7，再將前述ITO濺 鍍靶組件1置於其上並接合。因此，將成爲於無IT◦存在 之中央的非濺蝕部上外露有金屬In蠟7的構造。 僅在接合ITO濺鍍靶組件1的背面被覆金屬In蠟之情 況下，則於底板2的外露面被覆其他的金屬In。 如前述，若於底板2之全面覆蓋金屬In蠟7時，由於 對接合IT◦濺鍍靶組件與中央非濺蝕部僅需覆蓋一次金屬 In即可完成，故具有過程簡單的特徵。 9 本紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公釐） 44823 7 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（) 藉此，因中央之非濺蝕部不存在昂貴的ITO，所以可 大幅地降低成本β即使萬一中央之非濺蝕部被濺擊時，因 爲僅有金屬In飛散，這將不會成爲進行ΙΤΟ成膜時的污染 源。 此外，根據薄膜形成條件（薄膜的種類）亦可使用其 他焊料。亦即，可在中央之非濺蝕部使用構成濺鍍靶材之 元素或含有構成濺鍍靶材之元素的焊料。如此，使用之焊 料將以不會因受到濺擊而造成所形成之薄膜的污染的材料 爲前提，而在滿足此條件下，材料並不受特別地限制。 IT〇濺鍍靶組件1之矩形的兩端部分3各具備馬蹄形 之厚層部5與其周圍之薄層部6。平行部分4亦同樣擁有 平行的厚層部5與夾於其間之薄層部6，在平行部分4的 ΙΤΟ濺鍍靶組裝時，兩端部分3之前述馬蹄形之厚層部5 與薄層部6之端部與平行部分4之厚層部5與薄層部6之 端部、或平行部分4之厚層部5與薄層部6彼此間將分別 排成一列形成無終端之跑道。 做爲ΙΤΟ濺鍍靶組件1之兩端部分3，由於就平面觀 察之馬蹄形之厚層部5與其周圍之薄層部6全體而言大致 呈矩形，所以加工容易，另外亦具有對此兩端部分3所需 使用之粉末成形用金屬模具最少一個即可之優點。又如圖 所示，因具有比較小型的形狀，故在燒結或使用時，不會 發生裂縫等現象，故可大幅地提升加工良率。以ΙΤΟ濺鍍 靶組件1之所製作出之一對或複數對的平行部分4,在基 本上亦可製成相同形狀。與前述兩端部分3相同，所使用 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------I---- *--------t---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印：^ ^482 3 7 Α7 Β7 五、發明說明（3 ) 之粉末成形金屬模具亦最少一個即可，不僅於燒結或操作 時不會發生龜裂，且可大幅地提升加工效率》 如前述所說明，在此雖對ITO濺鍍靶組件加以說明， 惟亦可適用於氧化物燒結體濺鍍靶材料全體之事自不待言 〇 又，適用於前述之底板及中央之非濺蝕部之焊料可依 照該等氧化物燒結體濺鍍靶材料之種類做適當的選擇。 厚層部5(亦即跑道之截面形狀)爲大致梯形，而其兩斜 面8之角度爲5°以上90°未滿，較佳者爲10°以上60° 未滿，更佳爲15°以上45°下。濺鍍靶最易被濺擊之部分 (即厚層部5)受到集中地濺擊。 另外，雖然前述傾斜面8之大部分成爲濺蝕部，但相 較於厚層部5其灑蝕量少，並隨著越接近周緣部其量越減 少。 如此，對傾斜面而言，可緩和於該局部之侵蝕的進行 。雖然薄層部6也受到濺擊，但其量少。薄層部6的寬度 端視被濺擊範圍之安全性來設計。 圖2(a)顯示濺鍍靶之厚層部之大致梯彤的截面形狀。 中央爲厚層部’兩端爲薄層部。本發明之其他例子的濺鍍 靶之跑道截面形狀係顯示於圖2(b)〜（c)、圖3(d)〜⑴以及 圖4(g)〜⑴° 圖2(b)之濺鍍靶的厚層部之頂面（上面）係平坦，而 斜面（直斜面）連續地傾斜至濺鍍靶的周緣部。如此，就 斜面或圓弧面係延續至濺鍍靶之周緣部者而言，雖可不需 11 本纸張尺度適用中國國家標準（CNS〉A4規格公釐） ----- I lull —--vt . - I I I I--« — — — — — — I— (請先閱讀背面之注意事項再填冩本頁) 44823 7 五、發明說明（f ) 形成薄層部，惟就安全起見，可在斜面或圓弧面的周圍再 形成薄層部。 (請先閱讀背面之注意事項再填寫本頁) 圖2(c)所示濺鍍靶之厚層部之頂面爲平坦面，而兩端 部係以上弧面的方式連續地傾斜而平穩地延續至濺鍍靶的 周緣部，以該處做爲終點。 圖3(d)所示之濺鍍靶之兩端部，係中途夾著水平面而 形成2段的直斜面。如此有落差者係如圖所示般，形成有 不連續的斜面。 圖3(e)所示之濺鍍靶之厚層部爲平坦面，兩端部則具 有連續傾斜至濺鍍靶之周緣部的斜面（直斜面）。 圖3(f)所示之濺鍍靶之厚層部之頂面爲平坦面，兩端 部係未滿弧面的方式連續地延續至濺鍍靶的周緣部。 圖4(g)所示之濺鍍靶截面係凸型的上弧面，其不具平 坦部而延續至濺鍍靶的外端。 圖4(h)所示之濺鍍靶的截面係自厚層部至薄層部呈階 段般（在此爲2段）地減少之例，而各段之接合爲具有垂 直面者。 經濟部智慧財產局員工消費合作社印製 圖4⑴所示之濺鍍靶之截面係自厚層部至薄層部間具 有以傾斜面與垂直面所結合之不連續面的例子。 圖2〜圖4之(b)〜(g)均表示厚層部爲梯形以外之其他 例子（包含近似梯形者）。濺鍍靶之厚層部、薄層部乃至 於兩者間的傾斜部（面）可使用擇自上述直斜面、上弧面 、下弧面或該等面之組合，或是該等面與平面或垂直面之 組合中至少一種的連續或不連續的面來適當地製造出。 12 本紙張尺度適用中國國家標準（CNS)A4規格（2i〇X 297公楚） 經濟部智慧財產局員工消費合作社印製 44823 7 _______B7____ 五、發明說明（e) 示於圖2〜圖4的⑷〜（g)濺鍍靶之斜面與厚層部或薄 層部之接合部（角部）雖未對其細部表示之，但該等角若 陡峭，則在濺鍍靶材料之成形或燒結時會發生缺陷，或於 作業使用中恐會發生破損，乃希望將角部製作成如圖6所 示般平滑之曲面。 圖6爲其代表例，係將角進行切角使傾斜面曲面化之 例。圖中斜線部係表示濺鍍靶材。如此，若將成爲水平面 、斜面、弧面及垂直面之各交點的稜部分或角部切角爲 RO.1mm以上，將可有效地防止前述之缺點。 茲以圖5顯示濺擊平板狀濺鍍靶時之濺蝕輪廓與表示 具有本發明之梯形的厚層部之濺鍍靶輪廓的濺鍍靶截面說 明圖。 在圖5，橫軸係表示靶之尺寸（mm)，縱軸係表示濺 蝕之深度（Erosion Depth)或者是梯形厚層部之高度（mm )0 將平板狀濺鍍靶濺擊後之濺蝕輪廓9與具有本發明之 梯形之厚層部的濺鍍靶之傾斜面10的假想交點A距離該 厚層部之頂面11間設爲5mm以下，較佳爲2mm未滿，更 佳爲0.4mm未滿。 藉此，乃可對應於濺蝕輪廓而謀求節省IT0等之氧化 物燒結體之濺鍍靶原料。 於設定上’ IT0等之氧化物燒結體濺鎪靶之組件1之 濺鍍表面的中心線平均表面粗糙度爲Ra 4/zm未滿，較佳 爲未滿，而濺鍍靶之相對密度爲80%以上，較佳爲 13 ϋ張尺度適用中國國家標準規格（210 X &公复) I I I ϋ n ϋ ϋ n n I n I V > I ϋ ϋ I n ϋ 一-SJI I ϋ ϋ - n n n I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局貝工消費合作社印製 4482 3 7 A7 B7 五、發明說明（（1 ) 90%以上，又濺鍍靶之密度分佈0.04%以內，較佳爲〇.〇2 %以內。 若ITO等之氧化物燒結體之濺鍍靶組件1係由分割成 複數之構件來構成，則必須避免在製造過程上的偏差。在 前述之數據範圍內，可得較佳之ITO等之氧化物燒結體濺 鍍靶組件1。特別是當濺鍍靶之密度分佈係前範圍時，可 獲得均一的濺鍍膜。 〔發明之效果〕 本發明所提供之氧化物燒結體濺鍍靶組件，能夠對應 因磁控濺鍍而引起之局部的侵蝕來有效率地進行濺鍍’而 在不影響濺鍍靶性能的前提下可儘量節省減低ITO等氧化 物燒結體之昂貴的濺鍍靶原料之使用量，並且能夠容易地 製造難以一體成型的大型物。 就IT◦等的氧化物燒結體濺銨靶組件的兩端部分以馬 蹄形之厚層部與其周圍之薄層部爲全體而言，自平面觀之 因大致呈矩形故加工容易，且具有此兩端部分所使用的粉 末成形用金屬模具只要最少一個就夠之優點。 又，因擁有比較小型的形狀，故在燒結或使用時不會 發生龜裂等現象，而可大幅地提升加工良率。 同樣地，以ITO等的氧化物燒結體靶組件之一對或複 數對所製成的平行部分，在基本上亦可製成爲相同形狀。 因與前述的兩端部分同樣地所需使用之粉末成形用金屬模 具亦最少一個即可’且擁有比較簡單的形狀，所以於燒結 14 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐) ' II 1!—* . νΛ--I I II I 訂 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 “8237 A7 B7 五、發明說明（丨〆） 或使用時亦不會發生龜裂，且可大幅地提升加工良率。 又，藉由增加平行部分之對數，可再將ΠΌ等之氧化 物燒結體濺鍍靶組件之形狀予以大型化，是以’所具有之 特徵爲：可根據薄膜形成條件來輕易地改變ITO等之氧化 物燒結體濺鍍靶組件的尺寸。 跑道的截面形狀爲大致梯形，而濺蝕係集中地發生在 該梯形之厚層部。另外，雖然於前述傾斜面上亦會有一部 分發生濺蝕，但該傾斜面可緩和其局部的進行。 又，依其需要可將跑道之截面形狀變形之，譬如於厚 層部與薄層部之間或於厚層部之周緣上，具備有擇自直斜 面、上弧面、下弧面或該等面之組合體，或者是該等面與 平面或垂直面之組合體中至少一種之連續或不連續之斜面 〇 藉此，可製成能夠對應各種濺蝕的濺鍍靶形狀。 由於位於跑道中央之非濺蝕部係構成金屬In蠟等濺鍍 靶材之元素或包含有搆成濺鍍靶材元素之焊料等之不會造 成氧化物燒結體濺鍍薄膜受到污染的材料（金屬）外露之 故，即使萬一中央之非濺蝕部遭濺擊時，亦僅有金屬In等 之無害材料飛散，故可防止其成爲ΓΓΟ等之氧化物薄膜形 成之污染源。如此，可以簡單的過程獲得品質安定之濺鍍 膜。 依據以上所述，對應於濺蝕輪廓圖來集中地配置ITO 等的氧化物燒結體濺鍍靶的厚層部，就全體而言可省去不 必要的浪費，並可圖謀ITO等之氧化物燒結體濺鍍靶之效 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公爱） (請先閱績背面之注意事項再填寫本頁)The ZnO-based, MgO-based oxide sintered bodies are used as expensive sputtering target materials, and large-scale objects that are difficult to be integrally formed can be easily manufactured. [Known Technology] Thin film systems such as ΐτ〇, ZnO-based, Im〇3-Zn〇-based, and Mg〇-based for forming transparent conductive films are widely used mainly in liquid crystal displays, touch panels, and EL displays. Transparent electrode of a display device. In most cases, an oxide thin film for forming a transparent conductive film such as ITO is formed by sputtering. At the beginning of the development of a sputtering system, a 2-pole sputtering system was used. However, due to the high applied voltage in addition to this 2-pole sputtering system, it also has disadvantages such as rising substrate temperature and slow film formation. Therefore, researches on three-pole or four-pole sputtering equipment and development of high-frequency sputtering equipment were started, but the results were not satisfactory. In view of this situation, a magnetron sputtering device has recently been developed. A magnet is prepared inside the sputtering target, and the plasma is controlled by the magnetic beam emitted by the magnet to promote the ionization of the ionized gas in the sputtering. Target to increase sputtering efficiency. This has become the mainstream of current sputtering devices for forming transparent conductive films such as ITO films. This magnetron sputtering device performs thin film at high speed and low temperature. 4 The paper size is in accordance with China National Standard (CNS) A4. (210 X 297 mm) ----------- 1! * --- I ----- order ----- I --- line (please read the precautions on the back before filling in this Page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 482 3 7 A7 B7 V. Description of the invention (>), but plasma affected by the magnetic field will be confined, causing the sputtered ionic gas to concentrate only on the spatter A specific part of the plating target is subject to local erosion of the sputtering target. Generally speaking, this part that is locally eroded is called a sputtered part. So, if this sputtered part only occurs locally, most of the remaining sputtering targets are not used. Disadvantages. That is, when the sputtered portion caused by sputtering reaches a position (a certain depth) near the bottom plate, it means that the life of the sputtering target has expired and must be replaced. In other words, if the sputtering system occurs in a localized sputtering portion, the local sputtering saturation portion determines the life of the entire sputtering target. Sputtering targets such as ITO that form transparent conductive films are mostly large-area objects. As a result, local erosion as described above will cause the use efficiency of the sputtering target to be greatly reduced. In order to solve these problems, an integrated sputtering target is proposed (Japanese Unexamined Patent Publication No. 6-172991). The ceramic sputtering target for magnetron sputtering is divided into an etching area and a non-sputtering area. Thicker materials are formed in the sputtered area, and thinner materials are formed in the non-sputtered area. In addition, a sweet-smoke-type sputtering target for a transparent conductive film (Japanese Patent Application Laid-Open No. 1-29764) has also been proposed, in which materials are concentratedly arranged in a sputtering region. Although the above two improved sputtering targets are intended to extend the life of the sputtering target by increasing the thickness of the sputtering target at the local sputter portion, they do have a considerable effect, however, regardless of whether the sputtering target is an integrated type or not Because the gap must be formed in the central part or the peripheral part, there is a possibility that cracks may occur during the manufacturing process, that is, during the processing such as pressure sintering or honing. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) I. 1 --------- I --- ^. I ----------- -(Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4482 3 7 A7 ____B7 V. Description of the Invention (VII) Therefore, although these improvements are in The plating target has its effectiveness, but it has the disadvantage that it is not suitable for sputtering targets that require a large area. [Problems to be Solved by the Invention] The present invention is to provide an oxide sintered body sputtering target assembly such as ITO, which can efficiently perform sputtering according to local sputtering caused by magnetron sputtering. Without prejudice to target performance, the amount of expensive sputtering target materials used for oxide sintered bodies such as ITO can be saved as much as possible, and large objects that are difficult to be integrally molded can be easily manufactured. [Means to solve the problem] The present invention provides: 1_ An oxide sintered body sputtering target assembly, which is an oxide sintered body sputtering target assembly for magnetron sputtering; which is characterized by non-sputtering in the center There is no oxide sintered body, and the bottom surface of the non-sputtered part in the center is covered with the elements constituting the sputtering target or the solder containing the elements constituting the sputtering target. The thickness of the most susceptible portion of the target is thicker than that of the non-sputtered portion, and the portions of the oxide sintered body sputtering target divided in such a manner as to form a track shape are combined. 2. The oxide sintered body sputtering target assembly according to the above 1, wherein the oxide sintered body sputtering target assembly is parallel from the two end portions of the rectangle to one or more pairs arranged therebetween in plan view. Part of the composition 'and a non-sputtered part with a central part between the two end parts and the parallel part with the presence of an oxide-free sintered body. 6 This paper size applies to the Chinese National Standard (CNS) A4 specification (21 (U 297 mm) ---- I --------- A '------- Order --------- (Please read the precautions on the back before filling in this page > 44S237 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (#) 3 · The oxide sintered body sputtering target assembly as described in 2 above, in which both ends of the rectangle are provided with a horseshoe shape. The thick layer portion and the surrounding thin layer portion, and the thick layer portion and the thin layer portion formed in the parallel portion are the same as those of the horseshoe-shaped thick layer portion and the thin layer portion when the oxide sintered body sputtering target is combined. The ends are lined up to form a runway shape. 4 · The oxide sintered body sputtered leather bar assembly as described in 1 to 3 above, which The cross-sectional shape of the thick layer portion is approximately trapezoidal, and the average slope of the inclined surface is 5 ° or more and less than 90 °. 5. The oxide sintered body sputtering target assembly according to 1 to 4 above, wherein Between the layer portion and the thin layer portion or on the periphery of the thick layer portion, there is a body selected from a straight inclined surface, an upper curved surface, a lower curved surface, or a combination of these surfaces, or a combination of such surfaces with a plane or a vertical surface. Continuous or discontinuous inclined surface of at least one of the combinations. 6 * The oxide sintered body sputtering target assembly as described in 5 above, wherein it is a ridge portion at each intersection of a horizontal plane, an inclined plane, an arc plane, and a vertical plane, or The corners are cut at RO.lmm or more. 7. The oxide sintered body sputtering target assembly described in 5 or 6 above, wherein the sputtering profile of the flat-shaped sputtering target after sputtering is substantially The imaginary intersection point of the inclined surface of the sputtering target of the thick layer portion of the trapezoid is 5 mm or less from the top surface of the thick layer portion. 8. The oxide sintered body sputtering target assembly according to 1 to 7 above, wherein The average surface roughness Ra of the centerline of the plated surface is 4 " m or less, relative to the sputtering target The degree of density is above 80%, and the density distribution of the sputtering target is within 0.04%. 7 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (2〗 0 X 297 mm) III ----- Λ --- If --- Order--III I--I c Please read the notes on the back before filling out this page) 4482 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (<) [Implementation Mode of Invention ] When manufacturing a sputtering target assembly (member) made of an oxide sintered body, if it is explained based on the ITO sintered body, the indium oxide powder with an average particle diameter of 2 / zm and the tin oxide powder with the same particle diameter are weighed so that The weight ratio was 90:10, and after the binder for molding was added, the mixture was uniformly mixed. Secondly, this mixture is filled into a metal mold, and after being press-formed, it is sintered at high temperature to obtain the desired material. Although the ITO sputtering target usually contains indium oxide and tin oxide as the main components containing 70% by weight or more, a third component may be added in addition to the foregoing components in order to improve the conductivity or transparency of the transparent conductive film. The particle diameters and blending ratios of the indium oxide powder and tin oxide powder of the aforementioned ITO sputtering target assembly member are merely examples, and the present invention is not limited in this respect. In addition, in the aspect of the present invention, not only general ITO, but also other oxide sintered body sputtering target materials such as Zn〇-based, Iru〇3-ZnO-based, and MgO-based can be applied. The present invention also includes Thing. The foregoing example is further explained. The sintered body of the IT0 sputtering target obtained according to the aforementioned method is honed by a flat honing disc as a material for the assembly component of the IT0 sputtering target. In the finishing process, the surface of the IT0 sputtering target component is smoothed by using sandpaper, honing cloth, etc. Sandblasting can also be used in this finishing process. For example, by using glass beads, alumina beads, or zirconia beads as sandblasting materials, it is possible to reduce the unevenness on the surface of the sputtering target with edges and to remove the honing debris between the unevenness β 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) I--I ----- 乂 -------- Order • Cold -------- Line ( Please read the precautions on the back before filling this page) 44823 7 B7 V. Description of the invention (b) (Please read the precautions on the back before filling this page) Secondly, use a blower or water flow to clean it. It can also be washed with ultrasound. A method of removing the tape and removing particles attached to the sputtering target surface (tape peeling method) may be used. The appearance of the ιτο sputtering target assembly thus produced is shown in FIG. 1. It can be seen from a planar observation that the ΓΓΟ sputter target assembly member 1 is composed of two end portions 3 of a rectangle and a pair or a plurality of parallel portions 4 disposed therebetween, so that the two end portions 3 and the parallel portions 4 of the rectangles It is assembled by forming a central non-sputtered portion without ITO therebetween. The flat shape of the runway of this module is almost oval. If the ITO sputtering target assembly 1 is a pair in the parallel portion 4, the total number of the two end portions 3 including the two end portions will become four members. When the parallel portion 4 is in two pairs, the total number of the ITO sputtering target assembly 1 will be six members. The parallel portion 4 may be composed of two or more pairs of assembled portions. In this way, a long and large ITO sputtering target assembly can be obtained simply by adding parallel portions 4 of the same shape. Although the runway can also be bent with a certain curvature, the components at this time are limited to an ellipse that can match the curvature. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The base plate 2 is completely covered with metal In wax 7 and the aforementioned ITO sputtering target assembly 1 is placed thereon and joined. Therefore, a structure in which the metal In wax 7 is exposed on the non-sputtered portion in the center where no IT exists. Only when the back surface of the ITO sputtering target assembly 1 is coated with metal In wax, the exposed surface of the base plate 2 is covered with other metal In. As mentioned above, if the metal In wax 7 is completely covered on the bottom plate 2, it only needs to cover the metal In once to join the IT sputtering target assembly and the central non-sputtered part, so it has a simple process. 9 This paper size is subject to Chinese National Standard (CNS) A4 Regulations (210 X 297 mm) 44823 7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Due to the non-spattering of the central government There is no expensive ITO in the part, so the cost can be greatly reduced. Even if the non-sputtered part in the center is splashed, because only the metallic In is scattered, this will not become a source of pollution during the ITO film formation. In addition, other solders can be used depending on the film formation conditions (type of film). That is, the element constituting the sputtering target or the solder containing the element constituting the sputtering target may be used in the non-sputtered portion in the center. In this way, the solder used is premised on a material that does not cause contamination of the formed thin film due to splashing, and the material is not particularly limited under these conditions. The rectangular end portions 3 of the IT0 sputtering target assembly 1 each have a horseshoe-shaped thick layer portion 5 and thin layer portions 6 around it. The parallel portion 4 also has a parallel thick layer portion 5 and a thin layer portion 6 sandwiched therebetween. When the ITO sputtering target of the parallel portion 4 is assembled, the aforementioned horseshoe-shaped thick layer portion 5 and the thin layer portion of the both end portions 3 are assembled. The end portion of 6 and the thick layer portion 5 and the thin layer portion 6 of the parallel portion 4 or the thick layer portion 5 and the thin layer portion 6 of the parallel portion 4 will be aligned with each other to form an endless runway. As the both end portions 3 of the ITO sputtering target assembly 1, the horseshoe-shaped thick layer portion 5 and the surrounding thin layer portions 6 are substantially rectangular as a whole when viewed in a plane, so processing is easy, and the two ends are also provided. The advantage of using at least one metal mold for powder molding in Part 3 is sufficient. As shown in the figure, since it has a relatively small shape, cracks and the like do not occur during sintering or use, so the processing yield can be greatly improved. A pair or a plurality of pairs of parallel portions 4 fabricated by the ITO sputtering target assembly 1 can basically be made into the same shape. Same as the above two parts 3, the paper size used is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------- I ---- * ------- -t --------- line (please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: ^ 482 3 7 Α7 Β7 V. Description of Invention (3) At least one powder forming metal mold can be used, which will not only cause cracks during sintering or operation, but also greatly improve processing efficiency. "As explained above, although the ITO sputtering target assembly is described here, it can also be used. It goes without saying that it is applicable to the entirety of the oxide sintered body sputtering target material. Also, the solder suitable for the aforementioned bottom plate and the central non-sputtered part can be appropriately determined according to the type of the oxide sintered body sputtering target material. select. The thick layer 5 (ie, the cross-sectional shape of the runway) is substantially trapezoidal, and the angle of the two inclined surfaces 8 is 5 ° or more and 90 ° or less, preferably 10 ° or more and 60 ° or less, and more preferably 15 ° or more 45 °. The portion of the sputtering target that is most likely to be hit (i.e., the thick layer portion 5) is hit by concentrated sputtering. In addition, although most of the inclined surface 8 is a sputtered portion, the amount of erosion is smaller than that of the thick layer portion 5, and the amount decreases as it approaches the peripheral portion. In this way, for the inclined surface, the local erosion can be eased. Although the thin layer portion 6 is also splashed, the amount is small. The width end of the thin layer portion 6 is designed depending on the safety of the splashed area. Fig. 2 (a) shows a roughly stepped cross-sectional shape of a thick layer portion of a sputtering target. The center is a thick layer portion 'and both ends are thin layer portions. The cross-sectional shape of the runway of other examples of the sputtering target of the present invention is shown in Figs. 2 (b) to (c), Figs. 3 (d) to ⑴, and Figs. 4 (g) to ⑴ °. The top surface (upper surface) of the thick layer portion of the target is flat, and the inclined surface (straight inclined surface) is continuously inclined to the peripheral edge portion of the sputtering target. In this way, as far as the bevel or arc surface is continued to the periphery of the sputtering target, although it is not necessary to use 11 paper sizes, the Chinese national standard (CNS> A4 mm) ----- I lull —- -vt.-III I-- «— — — — — — I— (Please read the notes on the back before filling this page) 44823 7 V. Description of the invention (f) Form a thin layer, but for safety reasons , A thin layer portion can be formed around the inclined surface or the arc surface. (Please read the precautions on the back before filling this page) The top surface of the thick layer part of the sputtering target shown in Figure 2 (c) is a flat surface, and the two ends are continuously inclined and smoothly with the above arc surface. Continue to the peripheral edge of the sputtering target and use this as the end point. Both ends of the sputtering target shown in Fig. 3 (d) are formed into two straight slopes with the horizontal plane sandwiched between them. As shown in the figure, there is a discontinuous slope as shown in the figure. The thick layer portion of the sputtering target shown in FIG. 3 (e) is a flat surface, and the both end portions have inclined surfaces (straight inclined surfaces) continuously inclined to the peripheral edge portion of the sputtering target. The top surface of the thick layer portion of the sputtering target shown in Fig. 3 (f) is a flat surface, and both ends are continuous to the peripheral edge portion of the sputtering target in such a manner that the arc surface is not full. The cross section of the sputtering target shown in Fig. 4 (g) is a convex upper arc surface, which does not have flat portions and continues to the outer end of the sputtering target. The cross section of the sputtering target shown in Fig. 4 (h) is an example in which the section from the thick layer portion to the thin layer portion is reduced in steps (here, 2 steps), and the joints of the sections are formed with vertical surfaces. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The cross section of the sputtering target shown in Figure 4 (a) is an example of a discontinuous surface combined with an inclined plane and a vertical plane from the thick layer to the thin layer. (B) to (g) in Figs. 2 to 4 all show examples in which the thick layer portion is trapezoidal (including those with approximate trapezoidal shapes). The thick layer portion, thin layer portion, and even the inclined portion (face) of the sputtering target can be selected from the above-mentioned straight inclined surface, upper curved surface, lower curved surface, or a combination of these surfaces, or these surfaces and A continuous or discontinuous surface of at least one of a combination of planar or vertical surfaces is appropriately manufactured. 12 This paper size is in accordance with China National Standard (CNS) A4 (2i0X 297). Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 44823 7 _______B7____ 5. Description of the invention (e) Figures 2 to 4 ⑷ ~ (G) Although the joint (corner) of the inclined surface of the sputtering target and the thick or thin layer part is not shown in detail, if these angles are steep, when the sputtering target material is formed or sintered Defects may occur or damage may occur during operation. It is desirable to make the corners into a smooth surface as shown in FIG. 6. Fig. 6 is a representative example of the case where the angle is chamfered to make the inclined surface curved. The oblique line in the figure indicates the sputtering target. In this way, if the edges or corners that become the intersections of the horizontal plane, inclined plane, curved plane, and vertical plane are RO.1mm or more, the aforementioned disadvantages can be effectively prevented. FIG. 5 is an explanatory view showing a sputtering profile when a flat-plate sputtering target is sputtered and a sputtering target cross-sectional view showing the outline of a sputtering target having a thick layer portion of a trapezoidal shape according to the present invention. In Fig. 5, the horizontal axis represents the target size (mm), and the vertical axis represents the depth of the sputtering (Erosion Depth) or the height of the trapezoidal thick layer (mm). 0 The distance A between the imaginary intersection point A of the etched contour 9 and the inclined surface 10 of the sputtering target having the trapezoidal thick layer portion of the present invention is 5 mm or less, preferably less than 2 mm, more preferably 0.4mm or less. Accordingly, it is possible to save the sputtering target material of the oxide sintered body such as IT0 in accordance with the sputtering profile. The center line average surface roughness of the sputtered surface of the component 1 of an oxide sintered body sputtering target such as IT0 is set to Ra 4 / zm or less, preferably less than, and the relative density of the sputtering target is 80% or more, preferably 13 scales Applicable to Chinese national standard specifications (210 X & public copy) III ϋ n ϋ ϋ nn I n IV > I ϋ ϋ I n ϋ--SJI I ϋ n-nnn I (Please read the precautions on the back before filling this page) Printed by Shelley Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 4482 3 7 A7 B7 V. Description of the invention ((1) Above 90%, and the density distribution of the sputtering target is 0.04% It is preferably within 0.02%. If the sputtering target assembly 1 of an oxide sintered body such as ITO is composed of a plurality of divided parts, it is necessary to avoid deviation in the manufacturing process. In the foregoing data Within the range, a preferable oxide sintered body sputtering target assembly 1 such as ITO can be obtained. Especially when the density distribution of the sputtering target is in the previous range, a uniform sputtering film can be obtained. [Effects of the Invention] Provided by the present invention The oxide sintered body sputtering target assembly can respond to the problems caused by magnetron sputtering. Local erosion can be used to efficiently perform sputtering, without reducing the performance of the sputtering target, it can minimize the use of expensive sputtering target raw materials for oxide sintered bodies such as ITO, and can easily manufacture difficult Integrated large-sized object. For both ends of an oxide sintered oxide sputtering target assembly such as IT◦, a horseshoe-shaped thick layer portion and the surrounding thin layer portion are used as a whole, and they are processed in a rectangular shape in plan view. It is easy, and it has the advantage that at least one powder molding metal mold used at both ends is enough. In addition, because it has a relatively small shape, it does not cause cracks and other phenomena during sintering or use, which can greatly In the same way, the parallel portion made of one or a plurality of pairs of oxide sintered body target components such as ITO can basically be made into the same shape, because it is the same as the two end portions described above. At least one metal mold for powder molding can be used in the ground, and it has a relatively simple shape, so it is sintered on 14 paper standards that are applicable to Chinese National Standards (CNS) A4 specifications (210x297 mm) 'II 1! — *. ΝΛ--II II I (Please read the notes on the back before filling out this page) The “8237 A7 B7” printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Description of the invention (丨 〆) No cracking occurs during use, and the processing yield can be greatly improved. Moreover, by increasing the logarithm of the parallel part, the oxide sintered body such as ΠΌ can be sputtered on the target assembly. The shape is increased in size and is characterized by the fact that the size of an oxide sintered body sputtering target assembly such as ITO can be easily changed according to the film formation conditions. The cross-sectional shape of the runway is approximately trapezoidal, and the spatters are concentrated in thick portions of the trapezoid. In addition, although some erosion occurs on the inclined surface, the inclined surface can ease the progress of a part thereof. In addition, the cross-sectional shape of the runway can be deformed according to its needs. For example, between the thick layer portion and the thin layer portion or on the periphery of the thick layer portion, there is a selective slope, an upper arc surface, a lower arc surface, or the An isoplanar combination, or a continuous or discontinuous inclined surface of at least one of the combination of these planes and planes or vertical planes. By this, a sputtering target shape that can respond to various sputterings can be made. The non-sputtered part located in the center of the runway is a material that does not cause contamination of the oxide sintered body sputtering film because it contains elements such as metal In wax and sputtering target materials or contains solder that forms the sputtering target element ( Due to the exposure of metal, even if the non-sputtered part in the center is splashed, only harmless materials such as metal In are scattered, so it can be prevented from becoming a pollution source formed by oxide films such as ΓΓΟ. In this way, a stable sputtering film can be obtained in a simple process. According to the above, the thick layer portion of an oxide sintered body sputtering target such as ITO is concentratedly arranged in accordance with the sputtering profile, and unnecessary waste can be saved as a whole, and an oxide such as ITO can be planned. Effect of sintered body sputtering target 15 This paper size is applicable to Chinese National Standard (CNS) A4 (210 χ 297 public love) (please read the precautions on the back of the results before filling this page)
VA -線· A7 B7 44823 五、發明說明（β) 率大幅提昇與原材料之節省。 〔圖式之簡單說明〕 圖1係本發明之ITO等氧化物燒結體濺鍍靶組件之外 觀說明圖。 圖2所示係本發明之濺鍍靶之厚層部，亦即跑道之截 面形狀之種種例子的槪略說明圖(a)〜(c)， 圖3所示係本發明之濺鍍靶之厚層部，亦即跑道之截 面形狀之種種例子的槪略說明圖(d)〜(f)， 圖4所示係本發明之濺鍍靶的厚層部，亦即跑道之截 面形狀之種種例子的槪略說明圖(g)〜⑴， 圖5所示係濺擊平板狀之濺鍍靶時之濺蝕輪廓與具有 本發明之梯形厚層部之濺鍍靶的輪廓之截面形狀說明圖。 圖6所示係使角部成爲平滑曲面般取R，而將傾斜部 曲面化之例的說明。 〔符號說明〕 1 ITO等之氧化物燒結體濺鍍靶組件 2底板 3濺鍍靶組件之兩端部 4濺鍍靶組件之平行部 5跑道之馬蹄形厚層部或平行厚層部 6跑道之薄層部 7金屬In (蠟）之露出部 16 ---— — — — — — I ---vr^ ---- ---- - ---- -------- ·. (請先閱讀背面之注意事項再填寫本頁) 經濟邨智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐) A7 B7 五、發明說明（ 8厚層部與薄層部間之傾斜面 9灑擊平板狀之濺鍍靶時之濺蝕輪廓 1 〇具有本發明之梯形之厚層部之濺鍍靶輪廓 1 1梯形之厚層部之頂面 1 2傾斜面8之角度 A將平板狀之濺鍍靶濺擊後之濺蝕輪廓與具有梯形 之厚層部濺鍍靶之傾斜面的假想交點。 ：-----V-A--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐）VA-line · A7 B7 44823 V. Description of the invention (β) The rate is greatly improved and the raw material is saved. [Brief description of the drawings] Fig. 1 is an external view illustrating an sputtering target assembly of an oxide sintered body such as ITO according to the present invention. Figures 2 (a) to (c) are schematic illustrations of the thick layer portion of the sputtering target of the present invention, that is, various examples of the cross-sectional shape of the runway. Figure 3 is a schematic view of the sputtering target of the present invention. (D) ~ (f) are schematic illustrations of various examples of the cross-section shape of the thick section of the runway. Fig. 4 shows the thick section of the sputtering target of the present invention, that is, the cross-section shapes of the runway. (G) to ⑴ of the example, FIG. 5 is an explanatory diagram of a cross-sectional shape of a sputtering contour when a flat-shaped sputtering target is sputtered and a contour of a sputtering target having a trapezoidal thick layer portion according to the present invention. . Fig. 6 illustrates an example in which the corner portion is made into a smooth curved surface, and the inclined portion is curved. [Description of Symbols] 1 Sintered target assembly of oxide sintered body such as ITO 2 Base plate 3 Both ends of the sputtering target assembly 4 Parallel portion of the sputtering target assembly 5 Horseshoe-shaped thick layer portion or parallel thick layer portion of the 6 runway Thin layer part 7 Exposed part of metal In (wax) 16 ----------I --- vr ^ ---- --------- -------- · (Please read the precautions on the back before filling out this page) The paper size printed by the Economic Village Intellectual Property Bureau employee consumer cooperative is applicable to China National Standard (CNS) A4 (210x297 mm) A7 B7 V. Description of the invention (8 thick The inclined surface 9 between the layer portion and the thin layer portion 9 The sputtering contour 1 when the flat-plate-shaped sputtering target is sprayed 1 The top surface of the thick layer portion of the trapezoid having the trapezoidal thick layer portion of the present invention 1 1 2 The angle A of the inclined surface 8 is the imaginary intersection point of the sputtering profile of the flat-shaped sputtering target and the inclined surface of the sputtering target with a trapezoidal thick layer portion.: ----- VA ---- ---- Order --------- line (please read the notes on the back before filling out this page) The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed this paper The size of the paper is applicable to China National Standard (CNS) A 4 specifications (210 * 297 mm)