JP2009127125A - Sputtering target material and sputtering target obtained therefrom - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering target material which can securely reduces the occurrence of arcing, and which can be restrained from being broken and cracked, and to provide a sputtering target obtained therefrom. <P>SOLUTION: An almost planar sputtering target material is provided which has a rectangular sputtering surface, rectangular side surfaces and a rectangular bonding surface, wherein, a corner part formed resulting from abutting of at least the three surfaces among the plurality of surfaces composing the sputtering target material is chamfered. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a sputtering target material characterized in that a corner portion is chamfered, and a sputtering target obtained therefrom.

  2. Description of the Related Art Conventionally, sputtering methods that can easily control film thickness and components have been widely used as film formation methods for materials for electronic and electrical parts such as semiconductors. A sputtering target used in such a sputtering method is obtained by bonding a sputtering target material made of a material for forming a thin film and a backing plate made of a material having excellent conductivity and thermal conductivity through a bonding material. Is generally used.

  When performing a sputtering process using a sputtering target, it is desired that stable film formation can be performed while reducing the occurrence of arcing as much as possible. Further, when manufacturing a sputtering target material, it is also required to improve the yield by suppressing the generation of cracks or cracks in the target material.

Under these circumstances, Patent Documents 1 to 3 disclose target materials having chamfered edges. However, all of the target materials described in the document are chamfered on an edge portion composed of two surfaces, for example, a sputtering surface and a side surface. It was not possible to reliably reduce the occurrence of. Moreover, when manufacturing these target materials, it was not able to fully suppress the cracking of target materials and the occurrence of cracks.
JP 11-61395 A JP 2000-345326 A JP 2003-55763 A

  Therefore, an object of the present invention is to provide a sputtering target material capable of reliably reducing the occurrence of arcing and suppressing the occurrence of cracks and cracks, and a sputtering target obtained therefrom.

The sputtering target material of the present invention is a substantially plate-like sputtering target material having a rectangular sputtering surface, a rectangular side surface and a rectangular bonding surface,
Among the plurality of surfaces constituting the sputtering target material, the shape of the corner portion formed by contacting at least three surfaces has a shape formed by chamfering.

The chamfering process may be a C chamfering process or an R chamfering process.
Such a chamfering process may be performed on a corner portion formed on the sputtering surface side, or may be performed on a corner portion formed on the bonding surface side.

Further, in the sputtering target material, a chamfering process may be performed on an edge portion formed by contacting two surfaces.
The sputtering target of the present invention is characterized in that the sputtering target material and a backing plate are joined via a bonding material.

  The sputtering target may be formed by arranging a plurality of the sputtering target materials in parallel.

  According to the sputtering target material of the present invention, the chamfering process is performed on the corner portion formed by contacting at least three surfaces of the plurality of surfaces constituting the sputtering target material. There is no linear or acute shape at the corner that is the main starting point. Therefore, the occurrence of arcing due to the corner portion can be effectively suppressed, and the occurrence of arcing can be significantly reduced even when viewed from the whole sputtering target.

Moreover, it becomes possible to suppress the generation of cracks or cracks due to the occurrence of arcing, and the utilization efficiency of the sputtering target material can be significantly improved.
As a result, a stable film forming process can be realized.

  Further, the plasma of the sputtering process may circulate not only on the sputtering surface but also on the side surface. In such a case, there is a possibility that arcing due to the corner portion on the bonding surface side may occur. However, if the corner portion on the bonding surface side is chamfered, the occurrence of such arcing can be suppressed, and the occurrence of cracks and cracks due to the impact of arcing can also be effectively prevented. .

  Further, it is possible to effectively prevent the tearing of the vacuum pack due to the linear or acute shape existing in the corner portion.

Hereinafter, the sputtering target material of this invention and the sputtering target obtained from this are demonstrated in detail, referring drawings, as needed.
In this specification, “chamfering process” means a process of adding a slope or rounding to the corner of the intersection between the surfaces, and the shape is strictly limited when simply chamfering. is not. However, when the chamfering process is referred to as a C chamfering process and an R chamfering process, they are limited to these shapes.

Further, the C chamfering process refers to a processing process of cutting a contact portion at a predetermined angle, and the predetermined angle is usually 45 ± 15 °. The Cα _% treatment means a C chamfering treatment in which the ratio (%) of the length from each surface in contact with the thickness of the sputtering target is α. For example, C _50% means that when the thickness of the sputtering target is 10 mm,
It means a C chamfering process that cuts at 45 ± 15 ° at 5 mm from each contact surface.

On the other hand, C3 refers to a process of cutting at a predetermined angle at a length of 3 mm from each contact surface, and the predetermined angle is usually 45 ± 15 °.
Further, the R chamfering process refers to a processing process for rounding a contact portion. Therefore, R _β% treatment means that the ratio (%) of the length of the radius to the thickness of the sputtering target is β
This means an R chamfering process for processing into a round shape. For example, R _50% means an R chamfering process that forms a round shape with a radius of 5 mm when the thickness of the sputtering target is 10 mm.

On the other hand, R3 means an R chamfering process for processing into a round shape with a radius of 3 mm. For example, R3 means an R chamfering process for processing into a round shape with a radius of 3 mm.
<Sputtering target material>
FIG. 1 is a perspective view showing an example of the sputtering target material of the present invention. As shown in FIG. 1, the sputtering target material of the present invention is a substantially plate-like sputtering target material 1 having a rectangular sputtering surface 2, a rectangular side surface 3, and a rectangular bonding surface 4.

  The sputtering target material 1 of the present invention is formed by chamfering the shape of the corner portion A formed by contacting at least three surfaces of the plurality of surfaces constituting the sputtering target material 1. It is characterized by having a shape.

  FIG. 2 is a perspective view of a general machined part having a substantially plate shape. As shown in FIG. 2, in a machined part or the like, an “edge portion” means an intersecting portion 20 of two surfaces, whereas a “corner portion” is a portion formed by an intersection of three surfaces. 22 means. These definitions are based on JIS B0051-2004.

  That is, the corner portion A of the sputtering target material 1 is a portion where the three surfaces of the sputtering surface 2, the side surface 3, and the bonding surface 4 come into contact with each other, and therefore, when the corner portion A is not chamfered, the three surfaces It will exhibit an acute-angled shape consisting of the intersections of the edges. When such a sharp shape is present in the corner portion A when the sputtering process is performed, this shape becomes a starting point, and the occurrence rate of arcing becomes very high. Such arcing may cause chipping in the sputtering material even if the impact is small. Further, if the impact is large, the sputtering material may break.

  Therefore, the sputtering target material of the present invention removes the sharp shape that may exist in the corner portion by chamfering the corner portion A, drastically reduces the occurrence of arcing during the sputtering processing, and the sputtering material. It is possible to prevent chipping and cracking.

Specifically, such a chamfering process may be a C chamfering process or an R chamfering process.
For example, FIG. 3 shows an enlarged perspective view of the sputtering target material 1 of the present invention in which the corner portion A is subjected to C chamfering treatment. 3A is a C chamfering process that is C1 and cut to 45 °, FIG. 3B is a C chamfering process that is C2 and cut to 45 °, and FIG. 3C is C3 and 45 °. It is the figure which performed the C chamfering process cut into two. The thickness of the sputtering target material 1 at this time is 10 mm for all.

  As described above, the C chamfering process is a process of cutting the corner portion A formed by contacting at least three of the plurality of surfaces constituting the sputtering target material 1 at a predetermined angle. is there. The predetermined angle is usually 45 ± 15 °, and preferably 45 °. When such a process is performed, the acute angle shape formed in the corner portion A can be removed by bringing the three surfaces into contact with each other to obtain a planar shape, and the acute angle shape located in the corner portion A is the cause. Can be effectively prevented. 3A to 3C are examples in which the edge portion 20 is not chamfered, but the linear or acute shape in the peripheral portion adjacent to the corner portion A can be further reduced. From the viewpoint of being able to do so, it is preferable to chamfer these edge portions 20 as well.

In such C chamfering treatment, the thickness d of the sputtering target material 1 is usually about 2 to 20 mm and may vary depending on the thickness d, but Cα _% (α is usually 3 to 80, preferably It is preferably a C chamfering process (representing a number of 3 to 50). In other words, the ratio (%) of the length l from each surface in contact with the thickness d of the sputtering target material 1 is usually 3 to 80 (%), preferably 3 to 50 (%). Means chamfering. Specifically, for example, when the thickness d of the sputtering target material 1 is 10 mm, C _10% is a C chamfering process in which the length l from each contacting surface becomes 1 mm.

  Further, such C chamfering processing may be C0.3 to C5 C chamfering processing. This means that the length 1 from each abutting surface is C chamfering processing of 0.3 to 5 mm. For example, although it may vary depending on the thickness d of the sputtering target material 1, C0.3 to C4 for the thickness of 5 mm of the sputtering target material 1 and C0.3 for the thickness of 10 mm of the sputtering target material 1. It is desirable to be a C chamfering process of .about.C5.

  Further, such C chamfering treatment is specifically performed by, for example, a manual operation using a grindstone or paper, a surface grinder, laser machining, machining, NC milling, grinder, or electric discharge machining.

  Further, FIG. 4 shows an enlarged perspective view of the sputtering target material 1 in which the corner portion A is subjected to the R chamfering process. FIG. 4A shows the R chamfering process for R1, FIG. 4B shows the C chamfering process for R2, and FIG. 4C shows the C chamfering process for R3. The thickness of the sputtering target material 1 at this time is 10 mm for all.

  As described above, the R chamfering process is a process for rounding the corner portion A formed by contacting at least three of the plurality of surfaces constituting the sputtering target material 1. When such a process is performed, the acute angle shape formed in the corner portion A by removing the three surfaces can be removed to obtain a curved surface shape, and the acute angle shape located in the corner portion A results. Can be effectively prevented. 4A to 4C are examples in which the edge portion 20 is not chamfered, but the linear or acute shape in the peripheral portion adjacent to the corner portion A can be further reduced. From the viewpoint of being able to do so, it is preferable to chamfer these edge portions 20 as well.

In such R chamfering treatment, the thickness d of the sputtering target material 1 is usually about 2 to 20 mm, and may vary depending on the thickness d, but R _β% (β is usually 3 to 80, preferably R represents a number of 3 to 50). In other words, the ratio of the length of the radius r to the thickness d of the sputtering target material 1 is usually 3 to 80 (%), preferably 3 to 50 (%). Means. Specifically, for example, when the thickness d of the sputtering target material 1 is 10 mm, R _10% is a process of processing into a round shape with a radius r of 1 mm.

  Further, such an R chamfering process may be an R chamfering process of R0.3 to R5. This means that the radius c is a chamfering process with a length of 0.3 to 5 mm. For example, an R chamfering process with a radius of 0.15 to 4 mm is desirable for a thickness of 5 mm of the sputtering target material 1, and an R chamfering process with a radius of 0.3 to 8 mm is desirable for a thickness of 10 mm.

Specifically, the R chamfering process is performed by a method similar to the method employed in the C chamfering process.
In the sputtering target material of the present invention, the shape of the corner portion formed by contacting at least three surfaces may have a shape formed by the chamfering treatment as described above. That is, for example, if it is a corner portion that has been subjected to the R chamfering process, the curved surface shape that forms the corner portion only needs to exhibit a shape that partially has a curved surface formed by the R chamfering process, It is desirable that all the curved surface shapes forming the corner portion are curved surfaces formed by the R chamfering process.

  Moreover, the shape which performed the R chamfering process further to the edge parts 23a-23c newly formed by the C chamfering process located in the periphery of the corner part to which the C chamfering process was performed may be sufficient.

  FIG. 5 is a perspective view showing an example of a conventional sputtering target material. The edge portions 35a to 35b where the side surfaces 33a to 33b and the sputtering surface 32 abut are subjected to an R chamfering process. No chamfering treatment has been performed. FIG. 6 is a perspective view showing an example of the sputtering target material 1 of the present invention, in which the edge portions 45a to 45c where the side surfaces 43a to 43b and the sputtering surface 2 abut are subjected to R chamfering treatment and the corner portions are also formed. R chamfering is performed. As shown in FIG. 5, in the case of the conventional sputtering target material 10, even if the edge portions 35 a to 35 b are subjected to the R chamfering process to form a curved surface, the corner portion 36 has the R chamfering of the edge portion 35. A ridge line X resulting from the processing is formed. If a straight and acute shape such as the ridge line X is present at the corner portion 36, arcing is likely to occur from the part during the sputtering process, and cracking is caused by arcing. It is likely to occur and may cause cracking of the target material.

  However, in the case of the sputtering target material 1 of the present invention, as shown in FIG. 6, the corner portion A formed by contacting the three surfaces including the sputtering surface 2 and the side surfaces 43 a to 43 b has an R chamfer. Since the processing is performed, the ridge line X as shown in FIG. 5 does not exist, and the corner portion A is not formed with a linear shape. Therefore, the occurrence of arcing caused by the ridge line X can be effectively prevented.

  In addition, although FIG. 6 compared with the prior art example by using as an example the sputtering target material 1 of the present invention in which the corner portion A has been subjected to R chamfering treatment, as described above, the corner portion A of the sputtering target material 1 of the present invention has The chamfering process to be performed is not limited to the R chamfering process and may be a C chamfering process. However, from the viewpoint of surely removing the linear or acute shape in the peripheral portion adjacent to the corner portion A, the R chamfering process is preferable.

  Further, FIG. 6 shows an aspect in which the edge portions 45a to 45c are subjected to the R chamfering process. However, as shown in FIGS. 3 and 4, even if the edge part is not subjected to the chamfering process. Good. That is, as shown in FIGS. 3 to 4, the sputtering target material 1 of the present invention only needs to be chamfered at least at the corner portion A, and more reliably removes a linear or acute shape. From the viewpoint, it is preferable that the edge portion is also chamfered.

  Four corner portions A of the sputtering target material 1 are formed on the sputtering surface 2 side, and four corner portions A are also formed on the bonding surface 4 side which is the back surface side of the sputtering surface 2. If the chamfering process of the corner part mentioned above is performed to the corner part A formed in the sputtering surface 2 side which receives the impact of sputtering process directly, generation | occurrence | production of arcing can be suppressed more effectively.

However, the impact of the sputtering treatment may reach the side surface of the sputtering target material depending on the sputtering treatment conditions, and this impact may be conducted from the side surface of the target material to the bonding surface. When such an impact is applied, if there is a linear or acute shape in the corner portion A formed on the bonding surface side of the sputtering target material 1, the occurrence of arcing may be promoted. In addition, the occurrence of arcing can be a cause of cracking or cracking of the sputtering target material 1. Therefore, it is desirable to chamfer the corner portion A formed on the bonding surface side of the sputtering target material 1 to remove a linear or acute shape that may cause arcing.

  The manufactured sputtering target material 1 manufactures a sputtering target by bonding a bonding surface and a backing plate through a bonding material. The manufactured sputtering target is packed by a vacuum pack at the time of shipment. However, since the conventional sputtering target has a linear or acute shape formed at the corner portion, this causes the vacuum pack. There were frequent tears. However, when the corner portion A of the sputtering target material 1 of the present invention is chamfered, the straight or acute shape is removed from the corner portion, so that the tearing of the vacuum pack can be reduced. .

  There is no restriction | limiting in particular as the material of the sputtering target material 1 of this invention, The metal oxide which has In or Sn as a main component like ITO (Indium-Tin-Oxide), aluminum, copper, titanium, chromium, molybdenum, AZO (aluminum-zinc oxide) etc. are mentioned. In particular, ITO (Indium-Tin-Oxide), which is a material adopted for film formation for flat panel displays, which requires a large target size, is suitable.

<Sputtering target>
The sputtering target of the present invention is usually manufactured by bonding one bonding surface of the above-described sputtering target material 1 to a backing plate via a bonding material. The material of the backing plate is not particularly limited, and pure copper, copper alloy, and the like excellent in conductivity and thermal conductivity are preferably used. The material of the bonding material depends on the material of the sputtering target material and the backing plate, and is not particularly limited. For example, solder alloys such as In, Sn, Ag, and Zn, brazing materials, and resins Etc. are used.

  Further, as shown in the top view of the sputtering target 50 in FIG. 7, the sputtering target of the present invention has a plurality of sputtering target materials 1 arranged side by side, and these bonding surfaces are attached to the backing plate 52 via the bonding material. A sputtering target 50 manufactured by bonding, a so-called multi-division target may be used. In this case, each of the sputtering target materials 1 has corner portions A formed at a plurality of locations. Among the plurality of corner portions A, at least the corner portion B formed on the sputtering target 50 is chamfered as described above. As long as it is given. However, from the viewpoint of more reliably suppressing the occurrence of arcing, it is desirable that the chamfering process is also performed on the corner portion A formed on each sputtering target material 1. Further, as shown in FIG. 7, the part where the corner portion A is located is roughly divided into a part C and a part D, and it is adopted which part the corner part A located in which the chamfering process is performed. What is necessary is just to determine with compatibility with a sputtering device.

  By doing so, it is possible to remove the linear or acute shape formed at the corner portion B of the sputtering target, which is the most likely cause of arcing when performing the sputtering treatment, and more effectively arcing. Can be prevented.

EXAMPLES Hereinafter, although this invention is demonstrated further more concretely based on an Example, this invention is not limited to these Examples.
In addition, it evaluated in accordance with the following evaluation items using the obtained sputtering target.

《Chip during bonding》
The obtained sputtering target material was bonded (bonded) to a backing plate using a bonding material (pure In). This bonding was repeated 10 times, and the presence or absence of chips generated in the sputtering target material was confirmed.

○: No chipping occurred at all around the edge of the bonding surface.
(Triangle | delta): The chip | tip generate | occur | produced 1-3 places throughout the edge part periphery of a bonding surface.
X: Chipping occurred at four or more locations around the entire edge of the bonding surface.

《Tear when packed》
The vacuum-packed sputtering target is usually subjected to a load of about 500 g during the folding operation, packing process, or handling process of the surplus part of the vacuum-packing film.

  Therefore, as shown in FIG. 8, the evaluation of the tearing at the time of packing is performed by vacuum packing the obtained sputtering target using a 100 μm-thick vacuum packing film (polypropylene-polyethylene two-layer structure film), and The bonding surface and the lower surface were arranged as sputtering surfaces. Next, the surplus portion of the vacuum packing film was pulled with a force of 500 g in the direction of the arrow (vertical direction) from above the upper surface using only the spring 62, and the presence or absence of tearing of the vacuum pack was confirmed.

○: No tearing occurred in the vacuum pack.
X: The vacuum pack was torn.
<Number of arcing occurrences>
Using the obtained sputtering target, sputtering treatment was performed under the sputtering conditions shown below, and the number of arcing occurrences was counted with an arcing counter (μArc Monitor MAM Genesis, manufactured by Landmark Technology Co., Ltd.).

Sputtering conditions Process pressure = 0.4 Pa
Input power = 3 W / cm ²
Sputtering time = 3 hours Film forming temperature = room temperature [Example 1]
As shown in FIG. 6, a substantially plate-like ITO sputtering target material 1 (SnO ₂ = 10 wt%, relative density 99.8%) having a width of 150 mm × length of 635 mm × thickness of 10 mm was prepared,
The edge portions 43a to 43c were subjected to R1 chamfering treatment, and the four corner portions A located on the sputtering surface 2 were subjected to R1 chamfering treatment.

  Next, the sputtering target material 1 was bonded to a backing plate using the above bonding material to produce a sputtering target. Each of the above evaluation items was evaluated using the obtained sputtering target. The obtained results are shown in Table 1.

[Comparative Example 1]
As shown in FIG. 5, a substantially plate-like ITO sputtering target material 1 (SnO ₂ = 10 wt%, relative density 99.8%) having a width of 150 mm × length of 635 mm × thickness of 10 mm is fabricated, and the edge portions 33a to 33a˜ The chamfering process of R1 was given to 33b.

Next, a sputtering target was prepared in the same manner as in Example 1, and each evaluation was performed. The obtained results are shown in Table 1.
[Example 2]
An ITO sputtering target material 1 made of the material shown in Table 1 is prepared, and C0.3 chamfering is performed on the four corners A located on the sputtering surface 2, and C0 is applied to the edge and corners located on the bonding surface. .5 chamfering treatment was performed.

Next, a sputtering target was prepared in the same manner as in Example 1, and each evaluation was performed. The obtained results are shown in Table 1.
[Comparative Example 2]
An ITO sputtering target material 1 made of the material shown in Table 1 was produced, and no chamfering treatment was performed on the edge portion and the corner portion.

Next, a sputtering target was prepared in the same manner as in Example 1, and each evaluation was performed. The obtained results are shown in Table 1.
[Examples 3-9, Comparative Examples 3-5]
An ITO sputtering target material 1 made of the material shown in Table 1 was prepared, and chamfering was performed on the edge portion or the corner portion according to the contents shown in Table 1.

Next, a sputtering target was prepared in the same manner as in Example 1, and each evaluation was performed. The obtained results are shown in Table 1.
[Example 10]
Two sheets of a substantially plate-like ITO sputtering target material 1 (SnO ₂ = 10 wt%, relative density 99.7%) having a width of 150 mm, a length of 635 mm, and a thickness of 10 mm are prepared, and an edge portion 43a.
The chamfering process of R1 was performed on ˜43c, and the chamfering process of C3 was performed on the edge part and the corner part located on the bonding surface.

  Next, as shown in FIG. 7, the sputtering target material 1 was bonded to a backing plate using the bonding material, and a multi-split sputtering target composed of two sputtering target materials 1 was produced. Regarding the sputtering surface, the corner portion B was chamfered with R1, and the corner portion A located at the divided portion where the two sputtering target materials 1 face each other was also chamfered. Each of the above evaluation items was evaluated using the obtained multi-split sputtering target. The obtained results are shown in Table 1.

[Example 11]
In accordance with the contents shown in Table 1, the chamfering treatment of the edge portion and the corner portion located on the sputtering surface and the bonding surface was not performed on the corner portion A located at the divided portion where the two sputtering target materials 1 face each other. Except for the above, a multi-split sputtering target was produced in the same manner as in Example 10. Each of the above evaluation items was evaluated using the obtained multi-split sputtering target. The obtained results are shown in Table 1.

[Example 12]
Four sheets of an ITO sputtering target material 1 (SnO ₂ = 10 wt%, relative density 99.5%) each having a width of 150 mm, a length of 635 mm, and a thickness of 10 mm were prepared, and C0. 3 was chamfered.

Next, as shown in FIG. 7, the sputtering target material 1 was bonded to a backing plate using the bonding material, and a multi-split sputtering target composed of four sputtering target materials 1 was produced. Regarding the sputtering surface, the corner portion B was subjected to a chamfering process of C2, and the corner portion A located at the divided portion where the four sputtering target materials 1 face each other was not subjected to the chamfering process. Each of the above evaluation items was evaluated using the obtained multi-split sputtering target. The obtained results are shown in Table 1.

[Example 13]
A multi-split sputtering target was produced in the same manner as in Example 12 except that the chamfering treatment of the edge portion and the corner portion located on the sputtering surface and the bonding surface was performed according to the contents shown in Table 1. Each of the above evaluation items was evaluated using the obtained multi-split sputtering target. The obtained results are shown in Table 1.

[Examples 14 to 15]
Instead of the ITO sputtering target material 1, an SnO ₂ -5 wt% Ta ₂ O ₅ target material (relative density 98%, width 150 mm × length 635 mm × thickness 6 mm) is prepared, and the edge portion located on the sputtering surface and the bonding surface A sputtering target was prepared and evaluated in the same manner as in Example 1 except that the chamfering process for the corner portion was performed according to the contents shown in Table 1. The obtained results are shown in Table 1.

[Examples 16 to 17]
Instead of the ITO sputtering target material 1, a ZnO-2 wt% Al ₂ O ₃ target material (relative density 99%, width 150 mm × length 635 mm × thickness 10 mm) was prepared, and an edge portion located on the sputtering surface and bonding surface and A sputtering target was prepared and evaluated in the same manner as in Example 1 except that the corner portion was chamfered according to the contents shown in Table 1. The obtained results are shown in Table 1.

[Example 18, Comparative Example 6]
Instead of the ITO sputtering target material 1, a ZnO-2 wt% Ga ₂ O ₃ target material (relative density 99%, width 150 mm × length 635 mm × thickness 7 mm) was prepared, and an edge portion located on the sputtering surface and the bonding surface and A sputtering target was prepared and evaluated in the same manner as in Example 1 except that the corner portion was chamfered according to the contents shown in Table 1. The obtained results are shown in Table 1.

[Example 19, comparative example 7]
Instead of the ITO sputtering target material 1, an Al target material (purity 99.999%, width 150 mm × length 635 mm × thickness 16 mm) is prepared, and the chamfering treatment of the edge portion and the corner portion located on the sputtering surface is shown in Table 1. A sputtering target was prepared and evaluated in the same manner as in Example 1 except that the application was performed according to the contents shown. The obtained results are shown in Table 1.

[Example 20, comparative example 8]
A Cu target material (purity 99.999%, width 150 mm × length 635 mm × thickness 2 mm) is produced instead of the ITO sputtering target material 1 and the chamfering treatment of the edge portion and the corner portion located on the sputtering surface is shown in Table 1. A sputtering target was prepared and evaluated in the same manner as in Example 1 except that the application was performed according to the contents shown. The obtained results are shown in Table 1.

[Example 21, comparative example 9]
A Mo target material (purity 99.95%, width 150 mm × length 635 mm × thickness 4 mm) is produced instead of the ITO sputtering target material 1 and the chamfering treatment of the edge portion and the corner portion located on the sputtering surface is shown in Table 1. A sputtering target was prepared and evaluated in the same manner as in Example 1 except that the application was performed according to the contents shown. The obtained results are shown in Table 1.

It is a perspective view which is an example of the sputtering target material of this invention. It is a perspective view of the general machined component which has substantially plate shape. It is an example of the sputtering target material of this invention, and is an expanded perspective view of the corner part A. FIG. (A) C corner chamfering process is applied to corner part A, (b) C corner chamfering process is applied to corner part A, and (c) C3 chamfering process is applied to corner part A. It is an example of the sputtering target material of this invention, and is an expanded perspective view of the corner part A. FIG. (A) R corner chamfering processing is applied to corner portion A, (b) R2 corner processing is applied to corner portion A, and (c) R3 chamfering processing is applied to corner portion A. It is a perspective view which is an example of the conventional sputtering target material. The edge portions 33a to 33b are subjected to R chamfering processing. It is a perspective view which is an example of the sputtering target material of this invention. The edge portions 45a to 45c are subjected to R chamfering processing, and the corner portion A is subjected to R chamfering processing. 3 is a top view of a sputtering target 50 in which a plurality of sputtering target materials 1 are arranged side by side. FIG. It is a figure which shows the evaluation method of the tear at the time of packing in an Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sputtering target material 2 Sputtering surface 3 Side surface 4 Bonding surface 20 Edge part 22 Corner part 32 Sputtering surface 33a, 33b Side surface 35a, 35b Edge part 43a, 43b side surface 45a, 45b, 45c R surface chamfering process Edge part 50 with curved surface formed by processing Sputtering target (multi-division target)
52 Backing plate 60 Vacuum packed film 62 Spring only A Corner portion B of sputtering target material Corner portion X of sputtering target 50 Ridge line C formed at corner portion D portion where corner portion A of each target material is located in multi-divided target The part where the corner portion A of each target material in the divided target is located. D The thickness l of the sputtering target material 1 The length from each surface that abuts.

Claims (13)

In a substantially plate-like sputtering target material having a rectangular sputtering surface, a rectangular side surface and a rectangular bonding surface,
Sputtering characterized in that the shape of the corner portion formed by contacting at least three surfaces of the plurality of surfaces constituting the sputtering target material has a shape that is chamfered. Target material.   The sputtering target material according to claim 1, wherein the chamfering process is a C chamfering process. The sputtering target material according to claim 2, wherein the C chamfering process is a C α _% C chamfering process;
(Α in the Cα _% represents a number of 3 to 80).   The sputtering target material according to claim 2, wherein the C chamfering process is a C chamfering process of C0.3 to C5 and cut at 45 °.   The sputtering target material according to claim 1, wherein the chamfering process is an R chamfering process. The sputtering target material according to claim 5, wherein the R chamfering process is an R chamfering process of R _β% .
( _Β in the R _β% represents a number of 3 to 80).   The sputtering target material according to claim 5, wherein the R chamfering process is an R chamfering process of R0.3 to R5.   The said chamfering process is given to the corner part formed in the sputtering surface side, The sputtering target material in any one of Claims 1-7 characterized by the above-mentioned.   The said chamfering process is given to the corner part formed in the bonding surface side, The sputtering target material in any one of Claims 1-8 characterized by the above-mentioned. In the sputtering target material,
The sputtering target material according to any one of claims 1 to 9, wherein a chamfering process is performed on an edge portion formed by contact between two surfaces.   The said sputtering target material consists of ITO (Indium-Tin-Oxide), The sputtering target material in any one of Claims 1-10 characterized by the above-mentioned.   The sputtering target material and backing plate in any one of Claims 1-10 are joined through the bonding material, The sputtering target characterized by the above-mentioned.   The sputtering target according to claim 12, wherein the sputtering target is formed by arranging a plurality of the sputtering target materials according to claim 1.

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