JPS59211575A - Target for sputtering - Google Patents

Abstract

PURPOSE:To provide a titled target which can decrease abnormal sputtering and prevent short circuiting between wirings and has high reliability by rounding or tapering the end parts of each face body of a sputtering member of a target on the side facing a target. CONSTITUTION:A sputtering member 22 of aluminum, etc. is provided on a supporting member 21 of copper, etc. and the end parts 23- of each face body of the member 22 on the side opposite from the member 21 are rounded to about 3-5mm. R, thereby obtaining a target. Formation of a film of aluminum, etc. on a semiconductor wafer by using such target with a sputtering device (not shown) is accomplished by positioning the rounded surface of the material 22 to face the wafer and performing sputtering, by which abnormal sputtering is considerably decreased and short circuiting between wirings is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a metering gear for skidding.

[Technical background of the invention]

As is well known, a sputtering apparatus such as the one shown in FIG. 1 is used to form a 1/2 coat on a semi-dedicated wafer.

1 in the figure is internal or approximately 7
This is a sweet potato container in which the stem maintained at r is connected to the bomb f2.

Inside this vacuum vessel 1, a sputtering target 3 serving as a %L pole is provided. This targatsu 3
As shown in FIG. 2, the support member □ material 4 made of copper or the like and the rectangular parallelepiped AI! , kl/81 etc.: Sputter #
It is composed of H5.

A holding member 7 for holding a semiconductor mount 6 is provided inside the vacuum vessel 1 at a position opposite to the targate 3. Argon gas is supplied into the vacuum container 1 through a pipe (not shown).

[Problems with background technology]

However, according to the conventional sputtering target used in the sputtering apparatus mentioned above, 17473
Since the end portion 8 of the member 6 has a right-angled shape, an abnormal sputtering phenomenon occurs, as shown in FIGS. 3(a) and (bJ).
Although the metal coating 9 should originally have a thickness of about 0.7 to 1.1 μm, the abnormal coating 10 has a thickness of several μm to several 10 μm.
occurs partially. Therefore, in Fig. 3 (enlarge the dotted line part of bJ [9.Cj in Fig. 4], turn the gold-treated film 9, and form the wiring 11... into the shape 1). In this case, wiring 17 r 7711'4j l''-)%'
i('+'v% 1g') There is a risk that the remaining force will be brought into the relationship.

[Purpose of the invention]

The present invention was made in view of the above-mentioned circumstances, and it is an object of the present invention to provide a spantering tardut that can reduce the C abnormality phenomenon and prevent short circuits between wirings compared to the conventional one. Ruru.

C. Summary of the Invention] The present invention reduces the abnormal sputtering phenomenon by performing either Arnosi processing or Teno 4-processing on at least the end of each facet of the target of the sputtering member on the side facing the wafer. This can prevent short circuits between one wiring.

[Example of ZA C Ming]

Hereinafter, a span J ring l- according to an embodiment of the present invention will be described.
The explanation will be based on Fig. 5 (al, (bl).

In the figure, 21 (Ii) is a support member made of copper, for example.

A sputtering member 22 made of AJ is provided on the support member 2. This spatter 8iS
Cutting each face piece of material 22 1. On the end portion 23 on the side opposite to the support member 2 (or on the side facing the wafer), a light weight, for example, a light weight of 31 times, is attached. In addition, wide 1;1
The radius of the round of part 23... is approximately 3 to 5? , preferably within the legal range.

According to the present invention, the end portion 23 of each facet of the sputtering member 22 on the opposite side from the support member 2 ... Vζ radius 3I
Since the IA is rounded, the 5'S sputtering condition can be reduced from about 10% to about 3%, and short circuits between wires can be prevented.

Note that the J-rt for spun rings according to the present invention is not limited to the one shown in FIGS. 2] and the opposite end of the support member 2).
1), or as shown in Fig. 7, the entire side opposite to the support member 21 of the sputtering member 22'' may have a substantially hemispherical L shape. The same effect as the above-mentioned Jitten LJ1 can be expected.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to reduce abnormal sputtering phenomena and prevent short circuits between wirings (a spunmeling target with a total weight of 1%).

[Brief explanation of the drawing]

1st 1t: An explanatory diagram of the sysspame device IT, FIG. 2 is a perspective view of the conventional spunter ring J target used in the Qj spame device shown in FIG. 1, and FIG. - A cross-sectional view illustrating the state in which a metal film is formed on the surface of the cube using the i target,
Figure 1bJi is a plan view of Figure 3(a), Figure 4 is a partially enlarged plan view of Figure 3(1)), and Figure 8g5 (aJ is a sputtering make-up according to the example shown in Figure 1). i of
j, lr Llli IAI, same figure ([) j is same figure (a
The plan view of J, Figure 811.6 and Figure 7 are sectional views of a spasome ring machine without showing other embodiments of the present invention. 1... Shinya Taniki, 2... IA Guy Pump', 7...
Holding part 4.2)...Supporting member, 22.22',
22"...Snow! Nku part Bs23...End part. Takehiko Suzue, agent Patent attorney, Figure 1, Figure 2, Figure 3, Figure 4

Claims (1)

[Claims] In a sputtering target used when a sputtering device 1 is used to form a film on a semiconductor wafer, at least the end of each face of the medant facing the wafer is rounded or tapered. A sputtering targat whose adhesive property is ffi%.