JPH06306597A - Ti target material for magnetron sputtering - Google Patents
Ti target material for magnetron sputteringInfo
- Publication number
- JPH06306597A JPH06306597A JP12096193A JP12096193A JPH06306597A JP H06306597 A JPH06306597 A JP H06306597A JP 12096193 A JP12096193 A JP 12096193A JP 12096193 A JP12096193 A JP 12096193A JP H06306597 A JPH06306597 A JP H06306597A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- erosion
- surface roughness
- target material
- erosion portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、長期に亘ってパーテ
ィクルの少ない成膜形成が可能なマグネトロンスパッタ
リング用Ｔｉターゲット材に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ti target material for magnetron sputtering capable of forming a film with few particles for a long period of time.
【０００２】[0002]
【従来の技術】従来、一般に、雰囲気ガスとしてＮ2 や
Ｏ2 などの反応性ガスを用いてプラズマを発生させ、マ
グネットによりＴｉターゲット材の表面に垂直方向の磁
界を印加しながら、前記Ｔｉターゲット材表面をスパッ
タして基体の表面にＴｉＮ膜などを形成するマグネトロ
ンスパッタリング法が知られている。Conventionally, in general, to generate a plasma using a reactive gas such as N 2 or O 2 as an atmosphere gas, while applying a magnetic field in the direction perpendicular to the surface of the Ti target material by the magnet, the Ti target A magnetron sputtering method is known in which a material surface is sputtered to form a TiN film or the like on the surface of a substrate.
【０００３】[0003]
【発明が解決しようとする課題】一方、近年のこの種マ
グネトロンスパッタリング装置の大型化および高性能化
はめざましく、これに伴ないスパッタ条件は一段と苛酷
さを増す状況にあるが、上記の従来Ｔｉターゲット材の
場合、苛酷な条件下でのスパッタでは、比較的短時間の
操業で成膜中に、通常直径：０．３μｍ以上の粗大なパ
ーティクルが多数発生するようになり、これが原因で使
用寿命に至るのが現状である。On the other hand, in recent years, the magnetron sputtering apparatus of this kind has been remarkably increased in size and performance, and along with this, the sputtering conditions are becoming more severe. In the case of material, spattering under harsh conditions usually causes a large number of coarse particles with a diameter of 0.3 μm or more to be generated during film formation in a relatively short period of operation, which causes the service life to increase. It is the current situation.
【０００４】[0004]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、成膜中に粗大パーティクルを発
生させないマグネトロンスパッタリング用Ｔｉターゲッ
ト材を開発すべく研究を行なった結果、 （ａ） 従来Ｔｉターゲット材の場合、比較的短時間の
使用で成膜中に多数のパーティクルが形成されるように
なるのは、操業中にターゲット材のスパッタ面の非エロ
ージョン部、すなわちスパッタ面の中央部および外周縁
部にＴｉＮなどのスパッタ生成物が堆積するが、この堆
積物がある量になると、スパッタ中に前記非エロージョ
ン部から剥離し、これが成膜中にパーティクルとして混
入するようになることに原因があること。Therefore, the present inventors have
From the above viewpoints, as a result of research to develop a Ti target material for magnetron sputtering that does not generate coarse particles during film formation, (a) In the case of a conventional Ti target material, a relatively short time is used. A large number of particles are formed in the film because the sputtering products such as TiN are deposited on the non-erosion portion of the sputtering surface of the target material, that is, the central portion and the outer peripheral edge portion of the sputtering surface during the operation. The reason for this is that when a certain amount of this deposit is released from the non-erosion portion during sputtering, this becomes mixed as particles during film formation.
【０００５】（ｂ） 一般に、従来Ｔｉターゲット材に
おいては、そのスパッタ面の面粗さを全面に亘って０．
１〜１．５μｍＲａ（中心線平均粗さ、以下同じ）とし
ているが、これをスパッタ面における上記非エロージョ
ン部の面粗さを相対的に粗い２〜５μｍＲａとし、残り
の平面リング状のエロージョン部の面粗さをこれより平
滑な０．１〜１μｍＲａとすると、前記エロージョン部
の表面粗さによってスパッタが円滑に、かつ多数のパー
ティクルの発生が極力抑制された状態で行なわれるよう
になり、一方上記非エロージョン部の相対的に粗い面粗
さによって操業中に堆積したスパッタ生成物との間に強
固な密着力が形成されることから、苛酷な条件でスパッ
タを行なっても前記スパッタ生成堆積物が非エロージョ
ン部から剥離することがなく、成膜中のパーティクルの
形成が長期に亘って抑制されるようになること。(B) Generally, in the conventional Ti target material, the surface roughness of the sputtered surface is 0.
1 to 1.5 μmRa (center line average roughness, the same applies hereinafter), but the surface roughness of the non-erosion portion on the sputter surface is set to relatively coarse 2 to 5 μmRa, and the remaining flat ring-shaped erosion portion is used. Surface roughness of 0.1 to 1 μmRa, which is smoother than this, allows the surface roughness of the erosion portion to smoothly perform sputtering and to suppress the generation of a large number of particles as much as possible. Due to the relatively rough surface roughness of the non-erosion portion, a strong adhesion is formed with the sputter product deposited during operation, so that the sputter product deposit is obtained even if sputtering is performed under severe conditions. Does not separate from the non-erosion portion, and the formation of particles during film formation can be suppressed for a long period of time.
【０００６】（ｃ） スパッタ面における上記非エロー
ジョン部を同エロージョン部に対して面レベルで低くす
る、すなわちエロージョン部を非エロージョン部に対し
て突出させると、操業中に非エロージョン部に堆積した
スパッタ生成物がスパッタ反応空間の影響を受けにくく
なるので、成膜中のパータィクルの形成がさらに一段と
抑制されるようになること。なお、この場合、エロージ
ョン部をスパッタ面中央部の非エロージョン部に対して
面高さで０．０５〜５mm高くするのが望ましく、また、
非エロージョン部の外周縁部を面取り加工面とすること
や、上記突出したエロージョン部の角部をＲ加工面とす
ることが望ましく、これによってパーティクル発生の原
因となる異常放電が著しく低減するようになること。 以上（ａ）〜（ｃ）に示される研究結果が得られたので
ある。(C) When the non-erosion portion on the sputter surface is lowered at the surface level with respect to the erosion portion, that is, when the erosion portion is projected from the non-erosion portion, the spatter deposited on the non-erosion portion during operation. Since the products are less affected by the sputtering reaction space, the formation of particles during film formation is further suppressed. In this case, it is desirable that the erosion portion has a surface height higher by 0.05 to 5 mm than the non-erosion portion at the center of the sputtering surface.
It is desirable that the outer peripheral edge portion of the non-erosion portion be a chamfered surface, and that the corner portion of the protruding erosion portion be a R processed surface, so that abnormal discharge that causes generation of particles is significantly reduced. To become a. The research results shown in (a) to (c) above were obtained.
【０００７】この発明は、上記の研究結果にもとづいて
なされたものであって、スパッタ面の平面リング状のエ
ロージョン部を、残りのスパッタ面中央部および外周縁
部で構成された非エロージョン部に対して突出させ、か
つ前記エロージョン部の表面粗さを０．１〜１μｍＲａ
とし、前記非エロージョン部の表面粗さを２〜５μｍＲ
ａとすることにより、長期に亘ってパーティクルの少な
い成膜形成を可能ならしめたマグネトロンスパッタリン
グ用Ｔｉターゲット材に特徴を有するものである。The present invention has been made on the basis of the above research results. The flat ring-shaped erosion portion of the sputter surface is replaced by a non-erosion portion composed of the central portion and the outer peripheral edge portion of the remaining sputter surface. And the surface roughness of the erosion portion is 0.1 to 1 μmRa.
And the surface roughness of the non-erosion part is 2 to 5 μmR
A characteristic of the Ti target material for magnetron sputtering is that it can be formed into a film with few particles over a long period of time by setting a.
【０００８】つぎに、この発明のＴｉターゲット材にお
いて、エロージョン部および非エロージョン部の表面粗
さを上記の通りに限定した理由を説明する。すなわち、
エロージョン部の表面粗さを０．１〜１μｍＲａとした
のは、その表面粗さが０．１μｍＲａ未満では、スパッ
タ面が平滑すぎて、特に初期段階でのスパッタがスムー
ズに行なわれず、一方その表面粗さが１μｍＲａを越え
ると、異常放電が発生し易くなり、パーティクルの多発
形成の原因になるという理由によるものである。また、
非エロージョン部の表面粗さを２〜５μｍＲａとしたの
は、その表面粗さが２μｍＲａ未満では、スパッタ生成
堆積物との間にスパッタ中に剥離のない強固な密着力を
形成することができず、この結果上記の通りスパッタ生
成堆積物の剥離が起ってパーティクルの多数発生の原因
となり、一方その表面粗さが５μｍＲａを越えると、特
にスパッタ初期において、粗面が原因で異常放電を起し
易くなり、同様に成膜中のパーティクル数が増大するよ
うになるという理由にもとづくものである。さらに、エ
ロージョン部を非エロージョン部における中央部に対し
て面高さで０．０５〜５mm高くするのが望ましい理由
は、その高さが０．０５mm未満では所望のパーティクル
の発生抑制効果が得られず、一方その高さが５mmを越え
ると、スパッタ効率が低下し、成膜速度が低下するよう
になることにある。Next, the reason why the surface roughness of the erosion portion and the non-erosion portion in the Ti target material of the present invention is limited as described above will be explained. That is,
The surface roughness of the erosion part is set to 0.1 to 1 μmRa because the surface roughness is less than 0.1 μmRa because the sputtered surface is too smooth and the sputtering is not particularly smooth in the initial stage. This is because when the roughness exceeds 1 μmRa, abnormal discharge is likely to occur, which causes the formation of many particles. Also,
The surface roughness of the non-erosion portion is set to 2 to 5 μmRa, because if the surface roughness is less than 2 μmRa, it is not possible to form a strong adhesive force between the spatter generated deposit and the sputter generated deposit without peeling during sputtering. As a result, as described above, the sputtered deposits are peeled off, which causes a large number of particles to be generated. On the other hand, when the surface roughness exceeds 5 μmRa, an abnormal discharge is caused due to the roughened surface especially at the initial stage of sputtering. This is based on the reason that it becomes easier and the number of particles during film formation also increases. Furthermore, the reason why it is desirable to increase the surface height of the erosion portion by 0.05 to 5 mm with respect to the central portion in the non-erosion portion is that if the height is less than 0.05 mm, the desired particle generation suppressing effect can be obtained. On the other hand, if the height exceeds 5 mm, the sputtering efficiency is lowered and the film forming rate is lowered.
【０００９】[0009]
【実施例】つぎに、この発明のＴｉターゲット材を実施
例により具体的に説明する。図１にそれぞれ概略縦断面
図で示されるＡ型、Ｂ型、およびＣ型の形状および表１
に示される寸法を有し、かつ表２に示される表面粗さを
もった平面円形の本発明Ｔｉターゲット材１〜９をそれ
ぞれ用意した。また、比較の目的で同じく表２に示され
る寸法およびスパッタ面表面粗さをもった従来Ｔｉター
ゲット材１〜３を用意した。ついで、これらの各種Ｔｉ
ターゲット材を用い、直流マグネトロンスパッタリング
装置にて、電圧：４００Ｖ、出力：５０００Ｗ、雰囲
気：Ａｒ＋Ｎ2 気流の条件で、直径：２５０mm×厚さ：
１０mmの寸法をもった平面円形のＳｉウエハの表面に厚
さ：０．５μｍのＴｉＮ成膜を形成する操作を連続的に
行ない、一方で前記ＴｉＮ成膜中に存在する直径：０．
３μｍ以上のパーティクル数をパーティクルカウンター
を用い、レーザ光を当てて観察し、前記成膜中に前記パ
ーティクルが１００個以上存在するに至るまでのＳｉウ
エハ枚数を測定した。これらの測定結果を表２に示し
た。EXAMPLES Next, the Ti target material of the present invention will be specifically described by way of examples. Shapes of A-type, B-type, and C-type shown in schematic longitudinal sectional views in FIG. 1 and Table 1, respectively.
The flat target circular Ti target materials 1 to 9 of the present invention having the dimensions shown in Table 1 and the surface roughness shown in Table 2 were prepared. Further, for comparison purposes, the conventional Ti target materials 1 to 3 having the dimensions and the surface roughness of the sputter surface shown in Table 2 were prepared. Next, these various Ti
Using a target material and a direct current magnetron sputtering device, voltage: 400 V, output: 5000 W, atmosphere: Ar + N 2 gas flow, diameter: 250 mm × thickness:
A TiN film having a thickness of 0.5 μm is continuously formed on the surface of a flat circular Si wafer having a size of 10 mm, while the diameter of the TiN film existing in the TiN film is:
The number of particles having a particle size of 3 μm or more was observed by irradiating a laser beam with a particle counter, and the number of Si wafers until 100 or more particles were present during the film formation was measured. The results of these measurements are shown in Table 2.
【００１０】[0010]
【表１】 [Table 1]
【００１１】[0011]
【表２】 [Table 2]
【００１２】[0012]
【発明の効果】表２に示される結果から、本発明Ｔｉタ
ーゲット材１〜９は、いずれもエロージョン部はスパッ
タ効率の点から従来表面粗さと同等であるが、特に非エ
ロージョン部を構成するスパッタ面中央部および外周縁
部の表面粗さを相対的に粗くすることにより、これに堆
積するスパッタ生成物との密着性が高いものとなってい
るので、スパッタ中に前記スパッタ生成堆積物が剥れる
ことがなくなり、この結果成膜中のパーティクルの多発
が著しく長期に亘って抑制されるようになるのに対し
て、従来Ｔｉターゲット材１〜３は、スパッタ面の表面
粗さが全面同じであり、その表面粗さもスパッタ効率を
主体としたものとなり、どうしても相対的に平滑なもの
とならざるを得ず、この結果特に苛酷な条件でのスパッ
タではスパッタ生成堆積物のスパッタ面からの剥離を避
けることができなくなり、短時間の操業でパーティクル
の多発を見るようになることが明らかである。上述のよ
うに、この発明のＴｉターゲット材は、苛酷な条件での
スパッタでも成膜中にパーティクルが多発するのを長期
に亘って抑制することができるので、マグネトロンスパ
ッタリング装置の大型化および高性能化に十分満足に対
応でき、長い使用寿命を示すものである。From the results shown in Table 2, in the Ti target materials 1 to 9 of the present invention, the erosion portion is equivalent to the conventional surface roughness in terms of the sputtering efficiency, but especially the sputtering that constitutes the non-erosion portion. By making the surface roughness of the central part and the outer peripheral edge part relatively large, the adhesion with the sputter product deposited on the surface is high, so that the sputter product deposits are removed during sputtering. As a result, the number of particles generated during film formation is significantly suppressed for a long period of time, whereas the conventional Ti target materials 1 to 3 have the same surface roughness on the sputtering surface. However, the surface roughness is mainly based on the sputtering efficiency, and it is unavoidable that the surface roughness is relatively smooth. As a result, spatter is generated especially in spattering under severe conditions. Can not be avoided the peeling from the sputtering surface of the product material, it is clear that so view particles frequently in a short time of operation. As described above, the Ti target material of the present invention can suppress a large number of particles from being generated during film formation for a long period even when sputtering is performed under harsh conditions. It has a long service life and can be fully satisfied.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年１０月１９日[Submission date] October 19, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１２[Correction target item name] 0012
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１２】[0012]
【発明の効果】表２に示される結果から、本発明Ｔｉタ
ーゲット材１〜９は、いずれもエロージョン部はスパッ
タ効率の点から従来表面粗さと同等であるが、特に非エ
ロージョン部を構成するスパッタ面中央部および外周縁
部の表面粗さを相対的に粗くすることにより、これに堆
積するスパッタ生成物との密着性が高いものとなってい
るので、スパッタ中に前記スパッタ生成堆積物が剥れる
ことがなくなり、この結果成膜中のパーティクルの多発
が著しく長期に亘って抑制されるようになるのに対し
て、従来Ｔｉターゲット材１〜３は、スパッタ面の表面
粗さが全面同じであり、その表面粗さもスパッタ効率を
主体としたものとなり、どうしても相対的に平滑なもの
とならざるを得ず、この結果特に苛酷な条件でのスパッ
タではスパッタ生成堆積物のスパッタ面からの剥離を避
けることができなくなり、短時間の操業でパーティクル
の多発を見るようになることが明らかである。上述のよ
うに、この発明のＴｉターゲット材は、苛酷な条件での
スパッタでも成膜中にパーティクルが多発するのを長期
に亘って抑制することができるので、マグネトロンスパ
ッタリング装置の大型化および高性能化に十分満足に対
応でき、長い使用寿命を示すものである。From the results shown in Table 2, in the Ti target materials 1 to 9 of the present invention, the erosion portion is equivalent to the conventional surface roughness in terms of the sputtering efficiency, but especially the sputtering that constitutes the non-erosion portion. By making the surface roughness of the central part and the outer peripheral edge part relatively large, the adhesion with the sputter product deposited on the surface is high, so that the sputter product deposits are removed during sputtering. As a result, the number of particles generated during film formation is significantly suppressed for a long period of time, whereas the conventional Ti target materials 1 to 3 have the same surface roughness on the sputtering surface. However, the surface roughness is mainly based on the sputtering efficiency, and it is unavoidable that the surface roughness is relatively smooth. As a result, spatter is generated especially in spattering under severe conditions. Can not be avoided the peeling from the sputtering surface of the product material, it is clear that so view particles frequently in a short time of operation. As described above, the Ti target material of the present invention can suppress a large number of particles from being generated during film formation for a long period even when sputtering is performed under harsh conditions. It has a long service life and can be fully satisfied.
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief description of the drawing
【補正方法】追加[Correction method] Added
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図１】この発明のＴｉターゲット材のＡ型、Ｂ型、お
よびＣ型の実施例を示す概略縦断面図である。FIG. 1 is a schematic vertical cross-sectional view showing examples of A type, B type, and C type of a Ti target material of the present invention.
【符号の説明】 １ エロージョン部 ２ａ、２ｂ 非エロージョン部[Explanation of Codes] 1 Erosion part 2a, 2b Non-erosion part
Claims (4)
ン部を、残りのスパッタ面中央部および外周縁部で構成
された非エロージョン部に対して突出させ、かつ前記エ
ロージョン部の表面粗さを０．１〜１μｍＲａ（中心線
平均粗さ）とし、前記非エロージョン部の表面粗さを２
〜５μｍＲａとしたことを特徴とするマグネトロンスパ
ッタリング用Ｔｉターゲット材。1. A flat ring-shaped erosion portion of a sputter surface is projected to a non-erosion portion composed of a center portion and an outer peripheral edge portion of the remaining sputter surface, and a surface roughness of the erosion portion is set to 0. The surface roughness of the non-erosion portion is 2 to 1 μmRa (center line average roughness).
The Ti target material for magnetron sputtering is characterized in that the Ti target material has a thickness of ˜5 μmRa.
部の非エロージョン部に対して面高さで０．０５〜５mm
高くしたことを特徴とする上記請求項１記載のマグネト
ロンスパッタリング用Ｔｉターゲット材。2. The surface height of the erosion portion is 0.05 to 5 mm with respect to the non-erosion portion at the center of the sputtering surface.
The Ti target material for magnetron sputtering according to claim 1, wherein the Ti target material is made higher.
を面取り加工面としたことを特徴とする上記請求項１ま
たは２記載のマグネトロンスパッタリング用Ｔｉターゲ
ット材。3. The Ti target material for magnetron sputtering according to claim 1 or 2, wherein the non-erosion portion at the outer peripheral edge of the sputtering surface is a chamfered surface.
したことを特徴とする上記請求項１，２、または３記載
のマグネトロンスパッタリング用Ｔｉターゲット材。4. The Ti target material for magnetron sputtering according to claim 1, wherein the corner portion of the erosion portion is an R processed surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5120961A JP2720755B2 (en) | 1993-04-23 | 1993-04-23 | Ti target material for magnetron sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5120961A JP2720755B2 (en) | 1993-04-23 | 1993-04-23 | Ti target material for magnetron sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06306597A true JPH06306597A (en) | 1994-11-01 |
| JP2720755B2 JP2720755B2 (en) | 1998-03-04 |
Family
ID=14799286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5120961A Expired - Fee Related JP2720755B2 (en) | 1993-04-23 | 1993-04-23 | Ti target material for magnetron sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2720755B2 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998003696A1 (en) * | 1996-07-22 | 1998-01-29 | Balzers Aktiengesellschaft | Target arrangement with a circular disk |
| WO2000020654A1 (en) * | 1998-10-06 | 2000-04-13 | Nikko Materials Company, Limited | Sputtering target assembly of oxide sintered body |
| EP1087033A1 (en) * | 1999-09-23 | 2001-03-28 | Praxair Technology, Inc. | Extended life sputter targets |
| WO2002016667A3 (en) * | 2000-08-21 | 2002-06-06 | Honeywell Int Inc | Sputtering targets |
| JP2002180243A (en) * | 2000-12-11 | 2002-06-26 | Toshiba Corp | Titanium sputtering target and manufacturing method therefor |
| JP2002302762A (en) * | 2001-04-04 | 2002-10-18 | Tosoh Corp | Ito sputtering target |
| US6497797B1 (en) | 2000-08-21 | 2002-12-24 | Honeywell International Inc. | Methods of forming sputtering targets, and sputtering targets formed thereby |
| US6503380B1 (en) * | 2000-10-13 | 2003-01-07 | Honeywell International Inc. | Physical vapor target constructions |
| WO2004079039A1 (en) | 2003-03-07 | 2004-09-16 | Nikko Materials Co., Ltd. | Hafnium alloy target and process for producing the same |
| JP2004315931A (en) * | 2003-04-18 | 2004-11-11 | Dainippon Printing Co Ltd | Sputtering target |
| JP2008133520A (en) * | 2006-11-29 | 2008-06-12 | Mitsubishi Materials Corp | Silicon target material |
| JP2012021233A (en) * | 2011-09-16 | 2012-02-02 | Dainippon Printing Co Ltd | Sputtering apparatus and target plate |
| US20150357169A1 (en) * | 2013-01-04 | 2015-12-10 | Tosoh Smd, Inc. | Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same |
| US20180308671A1 (en) * | 2017-04-20 | 2018-10-25 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59211575A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Target for sputtering |
| JPH02236277A (en) * | 1989-03-09 | 1990-09-19 | Fujitsu Ltd | Sputtering method |
| JPH04173965A (en) * | 1990-11-05 | 1992-06-22 | Vacuum Metallurgical Co Ltd | Target for sputtering |
-
1993
- 1993-04-23 JP JP5120961A patent/JP2720755B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59211575A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Target for sputtering |
| JPH02236277A (en) * | 1989-03-09 | 1990-09-19 | Fujitsu Ltd | Sputtering method |
| JPH04173965A (en) * | 1990-11-05 | 1992-06-22 | Vacuum Metallurgical Co Ltd | Target for sputtering |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998003696A1 (en) * | 1996-07-22 | 1998-01-29 | Balzers Aktiengesellschaft | Target arrangement with a circular disk |
| WO2000020654A1 (en) * | 1998-10-06 | 2000-04-13 | Nikko Materials Company, Limited | Sputtering target assembly of oxide sintered body |
| EP1087033A1 (en) * | 1999-09-23 | 2001-03-28 | Praxair Technology, Inc. | Extended life sputter targets |
| WO2002016667A3 (en) * | 2000-08-21 | 2002-06-06 | Honeywell Int Inc | Sputtering targets |
| US6497797B1 (en) | 2000-08-21 | 2002-12-24 | Honeywell International Inc. | Methods of forming sputtering targets, and sputtering targets formed thereby |
| US6971151B2 (en) | 2000-10-13 | 2005-12-06 | Honeywell International Inc. | Methods of treating physical vapor deposition targets |
| US6503380B1 (en) * | 2000-10-13 | 2003-01-07 | Honeywell International Inc. | Physical vapor target constructions |
| JP2002180243A (en) * | 2000-12-11 | 2002-06-26 | Toshiba Corp | Titanium sputtering target and manufacturing method therefor |
| JP2002302762A (en) * | 2001-04-04 | 2002-10-18 | Tosoh Corp | Ito sputtering target |
| US8241438B2 (en) | 2003-03-07 | 2012-08-14 | Jx Nippon Mining & Metals Corporation | Hafnium alloy target |
| WO2004079039A1 (en) | 2003-03-07 | 2004-09-16 | Nikko Materials Co., Ltd. | Hafnium alloy target and process for producing the same |
| EP1602745A1 (en) * | 2003-03-07 | 2005-12-07 | Nikko Materials Company, Limited | Hafnium alloy target and process for producing the same |
| US7459036B2 (en) | 2003-03-07 | 2008-12-02 | Nippon Mining & Metals Co., Ltd | Hafnium alloy target and process for producing the same |
| CN100445420C (en) * | 2003-03-07 | 2008-12-24 | 日矿金属株式会社 | Hafnium alloy target and process for producing the same |
| EP1602745A4 (en) * | 2003-03-07 | 2009-05-27 | Nippon Mining Co | Hafnium alloy target and process for producing the same |
| US8062440B2 (en) | 2003-03-07 | 2011-11-22 | Jx Nippon Mining & Metals Corporation | Hafnium alloy target and process for producing the same |
| JP2004315931A (en) * | 2003-04-18 | 2004-11-11 | Dainippon Printing Co Ltd | Sputtering target |
| JP2008133520A (en) * | 2006-11-29 | 2008-06-12 | Mitsubishi Materials Corp | Silicon target material |
| JP2012021233A (en) * | 2011-09-16 | 2012-02-02 | Dainippon Printing Co Ltd | Sputtering apparatus and target plate |
| US20150357169A1 (en) * | 2013-01-04 | 2015-12-10 | Tosoh Smd, Inc. | Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same |
| US20180308671A1 (en) * | 2017-04-20 | 2018-10-25 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
| US11244815B2 (en) * | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
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|---|---|
| JP2720755B2 (en) | 1998-03-04 |
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| LAPS | Cancellation because of no payment of annual fees |