JPH09209133A - Titanium target for magnetron sputtering - Google Patents
Titanium target for magnetron sputteringInfo
- Publication number
- JPH09209133A JPH09209133A JP1401696A JP1401696A JPH09209133A JP H09209133 A JPH09209133 A JP H09209133A JP 1401696 A JP1401696 A JP 1401696A JP 1401696 A JP1401696 A JP 1401696A JP H09209133 A JPH09209133 A JP H09209133A
- Authority
- JP
- Japan
- Prior art keywords
- target
- dents
- hardness
- parts
- erosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、長期に亘ってパ
ーティクルの少ない成膜が可能なマグネトロンスパッタ
リング用Ｔｉターゲットに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ti target for magnetron sputtering capable of forming a film with few particles for a long period of time.
【０００２】[0002]
【従来の技術】一般に、雰囲気ガスとしてＮ2 やＯ2 な
どの反応性ガスを用いてプラズマを発生させ、マグネッ
トによりＴｉターゲットの表面に垂直方向の磁界を印加
しながら前記Ｔｉターゲット表面をスパッタしてＳｉウ
エハなど基体の表面にＴｉＮ膜などのスパッタ膜を形成
するマグネトロンスパッタリング法は知られている。こ
のＴｉターゲットを用いてマグネトロンスパッタリング
を行うと、Ｔｉターゲットのスパッタ面は中央部および
外周縁部を除くリング部分が溶融し、中央部および外周
縁部は溶融されない。Ｔｉターゲットのスパッタ面の溶
融されない中央部および外周縁部を、通常、非エロージ
ョン部と称し、Ｔｉターゲットのスパッタ面の中央部と
外周縁部で挟まれた溶融する部分を、通常、エロージョ
ン部と称している。マグネトロンスパッタリング中に前
記非エロージョン部は溶融しないため、その部分にＴｉ
Ｎなどのスパッタ堆積膜が形成され、この非エロージョ
ン部に形成されたスパッタ堆積膜が剥離脱落してＳｉウ
エハなどの基板上に直径：０．３μｍ以上の粗大なパー
ティクルが生ずると言われている。2. Description of the Related Art Generally, a reactive gas such as N 2 or O 2 is used as an atmosphere gas to generate plasma, and a magnet is used to apply a vertical magnetic field to the surface of the Ti target to sputter the surface of the Ti target. A magnetron sputtering method for forming a sputtered film such as a TiN film on the surface of a substrate such as a Si wafer is known. When magnetron sputtering is performed using this Ti target, the sputter surface of the Ti target is melted at the ring portion except the central portion and the outer peripheral edge portion, and the central portion and the outer peripheral edge portion are not melted. The unmelted central portion and outer peripheral edge portion of the sputtering surface of the Ti target are usually referred to as non-erosion portions, and the molten portion sandwiched between the central portion and outer peripheral edge portion of the Ti target sputtering surface is usually referred to as an erosion portion. I am calling it. Since the non-erosion part does not melt during magnetron sputtering, Ti
It is said that a sputter-deposited film of N or the like is formed, and the sputter-deposited film formed in the non-erosion portion is peeled off to generate coarse particles having a diameter of 0.3 μm or more on a substrate such as a Si wafer. .
【０００３】マグネトロンスパッタリング法を実施する
ためのマグネトロンスパッタリング装置は、近年、ます
ます大型化および高性能化し、これに伴ないスパッタ条
件は一段と苛酷さを増す状況にあるが、上記の従来Ｔｉ
ターゲットを一段と苛酷な条件下でスパッタを行うと、
一層短時間の操業で成膜中に直径：０．３μｍ以上の粗
大なパーティクルが多数発生し、このため、Ｔｉターゲ
ットの頻繁な交換を必要とするところから、スパッタリ
ングの操業効率はかえって低下することがあった。In recent years, the magnetron sputtering apparatus for carrying out the magnetron sputtering method has become larger and higher in performance, and the sputter conditions have become more severe with the increase in the magnetron sputtering apparatus.
If the target is sputtered under more severe conditions,
Since a large number of coarse particles with a diameter of 0.3 μm or more are generated during the film formation in a shorter time operation, which requires frequent replacement of the Ti target, the operation efficiency of the sputtering is rather reduced. was there.
【０００４】これを改善するために、スパッタ面の平面
リング状のエロージョン部の表面粗さを０．１〜１μｍ
Ｒａ（中心線平均粗さ）とし、残りのスパッタ面の中央
部および外周縁部で構成された非エロージョン部の表面
粗さをエロージョン部の表面粗さよりも粗い２〜５μｍ
Ｒａにしたマグネトロンスパッタリング用Ｔｉターゲッ
トが提案されている。すなわち、Ｔｉターゲットの非エ
ロージョン部の表面粗さを通常よりも粗い２〜５μｍＲ
ａに加工して、非エロージョン部に付着したＴｉＮなど
の堆積膜が剥離脱落しないようにしっかりと付着させ、
粗大パーティクルが発生するのを抑制したのである。そ
して上記非エロージョン部における外周縁部の角部をＲ
加工面とすることにより粗大パーティクルの発生がさら
に防止されるとしている（特開平６−３０６５９２公報
参照）In order to improve this, the surface roughness of the flat ring-shaped erosion portion of the sputter surface is 0.1 to 1 μm.
Ra (center line average roughness), and the surface roughness of the non-erosion portion constituted by the central portion and the outer peripheral edge portion of the remaining sputtering surface is 2 to 5 μm which is rougher than the surface roughness of the erosion portion.
Ra-based Ti targets for magnetron sputtering have been proposed. That is, the surface roughness of the non-erosion portion of the Ti target is 2 to 5 μm, which is rougher than usual.
Processed to a and firmly attach the deposited film such as TiN attached to the non-erosion part so that it does not peel off.
The generation of coarse particles was suppressed. The corners of the outer peripheral edge of the non-erosion portion are rounded.
It is said that generation of coarse particles is further prevented by forming a processed surface (see Japanese Patent Laid-Open No. 6-306592).
【０００５】[0005]
【発明が解決しようとする課題】上記特開平６−３０６
５９２公報記載のマグネトロンスパッタリング用Ｔｉタ
ーゲットは、確かに粗大パーティクルの発生が少なく、
優れたＴｉターゲットであるが、出力：１０ＫＷを越え
る高出力スパッタリングに対しては、スパッタ中の加熱
冷却の熱サイクルが激しく、そのためにターゲットの非
エロージョン部に堆積した付着膜が剥離し脱落し、それ
による粗大パーティクルの発生は避けられず、これが原
因で使用寿命に至るのが現状であった。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The Ti target for magnetron sputtering described in the 592 publication does not generate much coarse particles,
Although it is an excellent Ti target, for high-power sputtering exceeding output: 10 KW, the heat cycle of heating and cooling during sputtering is vigorous, so that the adhered film deposited on the non-erosion part of the target peels off and falls off. Generation of coarse particles due to this is unavoidable, and it is the current situation that this leads to the end of the service life.
【０００６】[0006]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、出力：１０ＫＷを越える高出力
スパッタリングを行っても成膜中の粗大パーティクルの
発生が少ないマグネトロンスパッタリング用Ｔｉターゲ
ットを開発すべく研究を行なった結果、Ｔｉターゲット
のスパッタ面の非エロージョン部に形成された窪みの平
均直径を５０〜３００μｍ、平均深さを５０〜３００μ
ｍ、窪みの占有面積率を２０〜８０％、窪みの底面の硬
度と非エロージョン部表面の硬度の差が５〜５０％とな
るように調整することのより、粗大パーティクルの発生
を阻止する効果が一層向上するという研究結果が得られ
たのである。Means for Solving the Problems Accordingly, the present inventors have
From the above viewpoint, as a result of conducting research to develop a Ti target for magnetron sputtering in which generation of coarse particles during film formation is small even when high-power sputtering exceeding output: 10 KW is performed, The average diameter of the depressions formed in the non-erosion portion is 50 to 300 μm, and the average depth is 50 to 300 μm.
m, the occupying area ratio of the dents is 20 to 80%, and the difference between the hardness of the bottom surface of the dents and the hardness of the surface of the non-erosion part is 5 to 50%. That is, the research result that the value is further improved was obtained.
【０００７】この発明は、上記の研究結果にもとづいて
なされたものであって、Ｔｉターゲットのスパッタ面中
央部および外周縁部の非エロージョン部に、平均直径：
５０〜３００μｍ、平均深さ：５０〜３００μｍの寸法
を有する窪みが２０〜８０％の占有面積率で分布しかつ
窪みの底面の硬さと非エロージョン部表面の硬さの差が
５〜５０％の硬度差を有するマグネトロンスパッタリン
グ用Ｔｉターゲットに特徴を有するものである。この発
明のマグネトロンスパッタリング用Ｔｉターゲットの非
エロージョン部に形成される窪みは、平均直径：１００
〜２００μｍ、平均深さ：１００〜２００μｍの寸法を
有する窪みが４０〜６０％の占有面積率で分布しかつ窪
みの底面の硬さと非エロージョン部表面の硬さの硬度差
が２０〜５０％のを有することが一層好ましい。The present invention has been made based on the above research results, and the average diameter of the non-erosion portions of the central portion and the outer peripheral edge portion of the Ti target sputtering surface is:
Dimples having a dimension of 50 to 300 μm and an average depth of 50 to 300 μm are distributed at an occupied area ratio of 20 to 80%, and the difference between the hardness of the bottom of the dimples and the hardness of the surface of the non-erosion portion is 5 to 50%. It is characterized by a Ti target for magnetron sputtering having a difference in hardness. The depressions formed in the non-erosion portion of the Ti target for magnetron sputtering of the present invention have an average diameter of 100.
˜200 μm, average depth: dents having dimensions of 100 to 200 μm are distributed with an occupied area ratio of 40 to 60%, and the hardness difference between the hardness of the bottom of the dent and the hardness of the surface of the non-erosion part is 20 to 50%. Is more preferable.
【０００８】この発明のＴｉターゲットにおいて、非エ
ロージョン部に、平均直径：５０〜３００μｍ、平均深
さ：５０〜３００μｍの寸法を有する窪みが２０〜８０
％の占有面積率で分布しかつ窪みの底面の硬さと非エロ
ージョン部表面の硬さとの硬度差が５〜５０％となるよ
うな窪みを形成すると、従来よりも一層成膜中の粗大パ
ーティクルの発生が少なくなる理由として、窪みの直径
および深さの寸法を上記の如く調整し、さらに窪みの占
有面積率および窪みの底面の硬さを上記の如く調整する
ことにより、マグネトロンスパッタリング中の異常放電
を防止しかつ熱サイクル下のスパッタ生成堆積物をアン
カー状に強固に固着し、それによってスパッタ中にはス
パッタ生成堆積物がＴｉターゲットから剥離落下しない
ことによるものと考えられる。In the Ti target of the present invention, the non-erosion portion has 20 to 80 depressions having a diameter of 50 to 300 μm and a depth of 50 to 300 μm.
% Of the occupied area ratio, and when the dents are formed so that the hardness difference between the hardness of the bottom surface of the dent and the hardness of the surface of the non-erosion portion is 5 to 50%, the formation of coarse particles during the film formation is further increased than in the conventional case. The reason why the generation is reduced is that by adjusting the diameter and depth of the recess as described above, and further adjusting the occupied area ratio of the recess and the hardness of the bottom of the recess as described above, abnormal discharge during magnetron sputtering is performed. It is believed that this is due to the fact that the spatter-produced deposits under the thermal cycle are firmly fixed in the form of an anchor so that the sputter-produced deposits do not peel off from the Ti target during sputtering.
【０００９】[0009]
【発明の実施の形態】ターゲットのスパッタ部材とし
て、直径：３００mm×厚さ：６．３５mmの寸法をもった
純度：９９．９９９％純Ｔｉ円板を用意し、さらに冷却
用バッキングプレートとして、直径：３５０mm×厚さ：
１５mmの寸法をもったアルミニウム合金（ＪＩＳ Ａ５
０５２）製円板を用意し、この純Ｔｉ円板をアルミニウ
ム合金製円板に拡散接合してターゲット基体を作製し
た。BEST MODE FOR CARRYING OUT THE INVENTION As a sputtering member for a target, a pure Ti disc having a diameter of 300 mm and a thickness of 6.35 mm and a purity of 99.999% is prepared. : 350 mm x thickness:
Aluminum alloy with a size of 15 mm (JIS A5
052) A disk made of was prepared, and this pure Ti disk was diffusion-bonded to an aluminum alloy disk to prepare a target substrate.
【００１０】実施例１ 前記ターゲット基体の純Ｔｉ円板の非エロージョン部に
レーザを照射することにより、表１〜表２に示される平
均直径、平均深さ、占有面積率および窪みの底面の硬さ
が非エロージョン部表面の硬さに対して５〜５０％の硬
度差を有する窪みを形成し、本発明Ｔｉターゲット１〜
１３および比較Ｔｉターゲット１〜８を作製した。な
お、これらレーザを照射により得られた本発明Ｔｉター
ゲット１〜１３および比較Ｔｉターゲット１〜８の硬度
差は、メルト部が軟化して非エロージョン部表面に比べ
て窪みの底面の硬さが小さい値を示した。Example 1 By irradiating the non-erosion portion of the pure Ti disk of the target substrate with a laser, the average diameter, the average depth, the occupied area ratio, and the hardness of the bottom surface of the depression shown in Tables 1 and 2 were measured. Form a depression having a hardness difference of 5 to 50% with respect to the hardness of the surface of the non-erosion portion,
13 and comparative Ti targets 1 to 8 were produced. The hardness difference between the Ti targets 1 to 13 of the present invention and the comparative Ti targets 1 to 8 obtained by irradiating these lasers is that the hardness of the bottom surface of the depression is smaller than that of the surface of the non-erosion portion due to softening of the melt portion. The value was shown.
【００１１】これら本発明Ｔｉターゲット１〜１３およ
び比較Ｔｉターゲット１〜８を直流マグネトロンスパッ
タリング装置に装入し、電圧：４００Ｖ、出力：５００
Ｗ、雰囲気：Ａｒ＋Ｎ2 の気流条件下で、直径：１５０
mmの平面円形のＳｉウエハの表面に０．５μｍのＴｉＮ
成膜を形成する操作を繰り返し行ない、ＴｉＮ成膜中に
存在する直径：０．３μｍ以上のパーティクル数をパー
ティクルカウンターを用い、レーザー光を当てて観察
し、前記成膜中に前記パーティクルが５０個を越えるに
至るまでのＳｉウエハ枚数を測定した。これらの測定結
果を表１〜表２に示した。The Ti targets 1 to 13 of the present invention and the Ti targets 1 to 8 for comparison were loaded into a DC magnetron sputtering apparatus, and the voltage was 400 V and the output was 500.
W, atmosphere: Ar + N 2 air flow condition, diameter: 150
0.5 μm TiN on the surface of a circular Si wafer of mm
The operation of forming a film is repeated, and the number of particles having a diameter of 0.3 μm or more existing in the TiN film formation is observed by irradiating a laser beam with a particle counter, and 50 particles are present during the film formation. The number of Si wafers was measured until the number exceeded the limit. The measurement results are shown in Tables 1 and 2.
【００１２】[0012]
【表１】 [Table 1]
【００１３】[0013]
【表２】 ＊印は、この発明の条件から外れた値を示す。[Table 2] * Indicates a value outside the conditions of the present invention.
【００１４】実施例２ 前記ターゲット基体の純Ｔｉ円板の非エロージョン部
に、ローレット加工することにより表３〜表４に示され
る窪みの平均直径、窪みの平均深さ、窪みの占有面積率
および硬度差を有する窪みを形成し、本発明Ｔｉターゲ
ット１４〜２６および比較Ｔｉターゲット９〜１６を作
製した。なお、これらローレット加工により得られた本
発明Ｔｉターゲット１４〜２６および比較Ｔｉターゲッ
ト９〜１６の硬度差は、非エロージョン部表面に比べて
窪みの底面の硬さが大きい値を示した。Example 2 The non-erosion portion of the pure Ti disk of the target substrate is knurled to form the average diameter of the depressions, the average depth of the depressions, the occupied area ratio of the depressions, and Indentations having hardness differences were formed to produce Ti targets 14 to 26 of the present invention and comparative Ti targets 9 to 16. The hardness difference between the Ti targets 14 to 26 of the present invention and the comparative Ti targets 9 to 16 obtained by the knurling showed that the hardness of the bottom surface of the depression was larger than that of the surface of the non-erosion portion.
【００１５】これら本発明Ｔｉターゲット１４〜２６お
よび比較Ｔｉターゲット９〜１６を直流マグネトロンス
パッタリング装置に装入し、実施例１と同じ条件でパー
ティクルが５０個を越えるに至るまでのＳｉウエハ枚数
を測定した。これらの測定結果を表３〜表４に示した。The Ti targets 14 to 26 of the present invention and the comparative Ti targets 9 to 16 were loaded into a DC magnetron sputtering apparatus, and the number of Si wafers until the number of particles exceeded 50 was measured under the same conditions as in Example 1. did. The measurement results are shown in Tables 3 to 4.
【００１６】[0016]
【表３】 [Table 3]
【００１７】[0017]
【表４】 ＊印は、この発明の条件から外れた値を示す。[Table 4] * Indicates a value outside the conditions of the present invention.
【００１８】実施例３ 前記ターゲット基体の純Ｔｉ円板の非エロージョン部
に、ＳｉＣブラスト粒子の大きさを変えてショットブラ
ストすることにより表５〜表６に示される窪みの平均直
径、窪みの平均深さ、窪みの占有面積率および硬度差を
有する窪みを形成し、本発明Ｔｉターゲット２７〜３９
および比較Ｔｉターゲット１７〜２４を作製した。な
お、これらショットブラストにより得られた本発明Ｔｉ
ターゲット２７〜３９および比較Ｔｉターゲット１７〜
２４の硬度差は、非エロージョン部表面に比べて窪みの
底面の硬さが大きい値を示した。Example 3 The average diameter of the depressions and the average of the depressions shown in Tables 5 to 6 were obtained by shot blasting the non-erosion portion of the pure Ti disk of the target substrate while changing the size of the SiC blast particles. A Ti target 27 to 39 of the present invention is formed by forming a recess having a depth, an occupied area ratio of the recess and a hardness difference.
And comparative Ti targets 17-24 were produced. The Ti of the present invention obtained by these shot blasts
Targets 27-39 and comparative Ti targets 17-
In the hardness difference of 24, the hardness of the bottom surface of the depression was larger than that of the surface of the non-erosion portion.
【００１９】これら本発明Ｔｉターゲット２７〜３９お
よび比較Ｔｉターゲット１７〜２４を直流マグネトロン
スパッタリング装置に装入し、実施例１と同じ条件でパ
ーティクルが５０個を越えるに至るまでのＳｉウエハ枚
数を測定した。これらの測定結果を表５〜表６に示し
た。The Ti targets 27 to 39 of the present invention and the comparative Ti targets 17 to 24 were loaded into a DC magnetron sputtering apparatus, and the number of Si wafers until the number of particles exceeded 50 was measured under the same conditions as in Example 1. did. The measurement results are shown in Tables 5 to 6.
【００２０】[0020]
【表５】 [Table 5]
【００２１】[0021]
【表６】 ＊印は、この発明の条件から外れた値を示す。[Table 6] * Indicates a value outside the conditions of the present invention.
【００２２】[0022]
【発明の効果】表１〜表６に示される結果から、ターゲ
ット基体の純Ｔｉ円板のスパッタ面の非エロージョン部
に平均直径：５０〜３００μｍ、平均深さ：５０〜３０
０μｍの寸法を有する窪みが２０〜８０％の占有面積率
で分布しかつ窪みの底面の硬さが非エロージョン部表面
の硬さに比べて５〜５０％の硬度差を有する窪みを形成
した本発明Ｔｉターゲット１〜３９は、０．３μｍ以上
のパーティクルが５０個を越えるに至るまでのＳｉウエ
ハ枚数が多く、パーティクルが発生しにくいことが分か
る。したがって、この発明のＴｉターゲットは、１０Ｋ
Ｗを越える苛酷な条件での高出力スパッタでも成膜中に
パーティクルが多発するのを長期に亘って抑制すること
ができるので、マグネトロンスパッタリング装置の大型
化および高性能化に十分満足に対応でき、長い使用寿命
を示すものである。From the results shown in Tables 1 to 6, the average diameter: 50 to 300 μm, the average depth: 50 to 30 in the non-erosion portion of the sputtering surface of the pure Ti disk of the target substrate.
A book in which depressions having a size of 0 μm are distributed at an occupation area ratio of 20 to 80% and hardness of a bottom surface of the depressions has a hardness difference of 5 to 50% as compared with hardness of a surface of a non-erosion portion. It can be seen that the invention Ti targets 1 to 39 have a large number of Si wafers until the number of particles of 0.3 μm or more exceeds 50, and particles are hard to be generated. Therefore, the Ti target of the present invention is 10K
Even in high power sputtering under harsh conditions exceeding W, it is possible to suppress the generation of many particles during film formation for a long period of time. It shows a long service life.
Claims (1)
び外周縁部の非エロージョン部に、平均直径：５０〜３
００μｍ、平均深さ：５０〜３００μｍの寸法を有する
窪みが２０〜８０％の占有面積率で分布しかつ窪みの底
面の硬さが非エロージョン部のスパッタ表面の硬さに比
べて５〜５０％の硬度差を有することを特徴とするマグ
ネトロンスパッタリング用Ｔｉターゲット。1. An average diameter of 50 to 3 in a non-erosion portion of a sputtering target center portion and an outer peripheral edge portion of a Ti target.
The dents having a size of 00 μm and an average depth of 50 to 300 μm are distributed at an occupied area ratio of 20 to 80%, and the hardness of the bottom surface of the dents is 5 to 50% of the hardness of the sputter surface of the non-erosion portion. A Ti target for magnetron sputtering, which has a hardness difference of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1401696A JPH09209133A (en) | 1996-01-30 | 1996-01-30 | Titanium target for magnetron sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1401696A JPH09209133A (en) | 1996-01-30 | 1996-01-30 | Titanium target for magnetron sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09209133A true JPH09209133A (en) | 1997-08-12 |
Family
ID=11849406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1401696A Pending JPH09209133A (en) | 1996-01-30 | 1996-01-30 | Titanium target for magnetron sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09209133A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6038305B2 (en) * | 2013-09-12 | 2016-12-07 | Ｊｘ金属株式会社 | Backing plate integrated metal sputtering target and method for manufacturing the same |
| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| US9704695B2 (en) | 2011-09-30 | 2017-07-11 | Jx Nippon Mining & Metals Corporation | Sputtering target and manufacturing method therefor |
| WO2023008559A1 (en) * | 2021-07-29 | 2023-02-02 | 田中貴金属工業株式会社 | Sputtering target and method for producing same |
-
1996
- 1996-01-30 JP JP1401696A patent/JPH09209133A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9704695B2 (en) | 2011-09-30 | 2017-07-11 | Jx Nippon Mining & Metals Corporation | Sputtering target and manufacturing method therefor |
| JP6038305B2 (en) * | 2013-09-12 | 2016-12-07 | Ｊｘ金属株式会社 | Backing plate integrated metal sputtering target and method for manufacturing the same |
| US9711336B2 (en) | 2013-09-12 | 2017-07-18 | Jx Nippon Mining & Metals Corporation | Backing plate-integrated metal sputtering target and method of producing same |
| KR20200043515A (en) | 2013-09-12 | 2020-04-27 | 제이엑스금속주식회사 | Metallic sputtering target integrated with backing plate, and method for manufacturing same |
| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| WO2023008559A1 (en) * | 2021-07-29 | 2023-02-02 | 田中貴金属工業株式会社 | Sputtering target and method for producing same |
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