US7459036B2 - Hafnium alloy target and process for producing the same - Google Patents
Hafnium alloy target and process for producing the same Download PDFInfo
- Publication number
- US7459036B2 US7459036B2 US10/548,347 US54834705A US7459036B2 US 7459036 B2 US7459036 B2 US 7459036B2 US 54834705 A US54834705 A US 54834705A US 7459036 B2 US7459036 B2 US 7459036B2
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- US
- United States
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- wafer
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
-
- (hkl): Diffracting plane appearing when Hf powder is measured with X-ray diffraction
- l(hkl): Measured intensity of (hkl)
- l*(hkl): Relative intensity of JCPDS card
Claims (2)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/204,069 US8062440B2 (en) | 2003-03-07 | 2008-09-04 | Hafnium alloy target and process for producing the same |
US12/259,396 US8262816B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
US12/259,391 US8241438B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-061084 | 2003-03-07 | ||
JP2003061084 | 2003-03-07 | ||
PCT/JP2004/000448 WO2004079039A1 (en) | 2003-03-07 | 2004-01-21 | Hafnium alloy target and process for producing the same |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/204,069 Division US8062440B2 (en) | 2003-03-07 | 2008-09-04 | Hafnium alloy target and process for producing the same |
US12/259,396 Division US8262816B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
US12/259,391 Division US8241438B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060189164A1 US20060189164A1 (en) | 2006-08-24 |
US7459036B2 true US7459036B2 (en) | 2008-12-02 |
Family
ID=32958949
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/548,347 Active 2025-06-07 US7459036B2 (en) | 2003-03-07 | 2004-01-21 | Hafnium alloy target and process for producing the same |
US12/204,069 Active 2026-02-07 US8062440B2 (en) | 2003-03-07 | 2008-09-04 | Hafnium alloy target and process for producing the same |
US12/259,391 Active 2026-09-07 US8241438B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
US12/259,396 Active 2026-10-05 US8262816B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/204,069 Active 2026-02-07 US8062440B2 (en) | 2003-03-07 | 2008-09-04 | Hafnium alloy target and process for producing the same |
US12/259,391 Active 2026-09-07 US8241438B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
US12/259,396 Active 2026-10-05 US8262816B2 (en) | 2003-03-07 | 2008-10-28 | Hafnium alloy target |
Country Status (8)
Country | Link |
---|---|
US (4) | US7459036B2 (en) |
EP (1) | EP1602745B1 (en) |
JP (1) | JP4203070B2 (en) |
KR (1) | KR100698744B1 (en) |
CN (1) | CN100445420C (en) |
DE (1) | DE602004029768D1 (en) |
TW (1) | TWI242047B (en) |
WO (1) | WO2004079039A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090194898A1 (en) * | 2001-07-18 | 2009-08-06 | Nippon Mining & Metals Co., Ltd. | Hafnium Silicide Target for Forming Gate Oxide Film, and Method for Preparation Thereof |
US20090229975A1 (en) * | 2007-02-09 | 2009-09-17 | Nippon Mining & Metals Co., Ltd. | Target formed of Sintering-Resistant Material of High-Melting Point Metal Alloy, High-Melting Point Metal Silicide, High-Melting Point Metal Carbide, High-Melting Point Metal Nitride, or High-Melting Point Metal Boride, Process for Producing the Target, Assembly of the Sputtering Target-Backing Plate, and Process for Producing the Same |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1602745B1 (en) * | 2003-03-07 | 2010-10-27 | Nippon Mining & Metals Co., Ltd. | Hafnium alloy target and process for producing the same |
CN100376696C (en) * | 2003-07-25 | 2008-03-26 | 日矿金属株式会社 | Highly pure hafnium material, target and thin film comprising the same and method for producing highly pure hafnium |
US20060266158A1 (en) * | 2003-11-19 | 2006-11-30 | Nikko Materials Co., Ltd. | High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium |
US7399666B2 (en) * | 2005-02-15 | 2008-07-15 | Micron Technology, Inc. | Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics |
US7498247B2 (en) | 2005-02-23 | 2009-03-03 | Micron Technology, Inc. | Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics |
EP1930451B9 (en) * | 2005-07-07 | 2011-10-26 | Nippon Mining & Metals Co., Ltd. | High-purity hafnium, target and thin film comprising high-purity hafnium, and process for producing high-purity hafnium |
US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
RU2735842C1 (en) * | 2020-06-09 | 2020-11-09 | Акционерное общество "Чепецкий механический завод" | Method of producing thin sheets of hafnium with isotropic mechanical properties |
CN112974520B (en) * | 2021-02-03 | 2023-02-03 | 西部新锆核材料科技有限公司 | Hafnium plate processing method |
Citations (16)
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US4333808A (en) | 1979-10-30 | 1982-06-08 | International Business Machines Corporation | Method for manufacture of ultra-thin film capacitor |
JPS59208044A (en) * | 1983-05-13 | 1984-11-26 | Toshiba Corp | Corrosion-resistant hafnium alloy |
JPS6024342A (en) * | 1983-07-20 | 1985-02-07 | Hitachi Ltd | Control rod for nuclear reactor |
US4619695A (en) | 1983-09-22 | 1986-10-28 | Nihon Kogyo Kabushiki Kaisha | Process for producing high-purity metal targets for LSI electrodes |
JPH0215167A (en) | 1988-07-01 | 1990-01-18 | Sumitomo Chem Co Ltd | Magnetron sputtering target |
US5196916A (en) | 1990-02-15 | 1993-03-23 | Kabushiki Kaisha Toshiba | Highly purified metal material and sputtering target using the same |
JPH05214521A (en) | 1992-01-30 | 1993-08-24 | Tosoh Corp | Titanium sputtering target |
US5330589A (en) * | 1993-05-25 | 1994-07-19 | Electric Power Research Institute | Hafnium alloys as neutron absorbers |
US5336378A (en) | 1989-02-15 | 1994-08-09 | Japan Energy Corporation | Method and apparatus for producing a high-purity titanium |
JPH06306597A (en) | 1993-04-23 | 1994-11-01 | Mitsubishi Materials Corp | Ti target material for magnetron sputtering |
JPH1060631A (en) | 1996-08-13 | 1998-03-03 | Kobe Steel Ltd | Titanium-hafnium alloy target material for vapor phase coating |
EP0902102A1 (en) | 1997-09-10 | 1999-03-17 | Japan Energy Corporation | Ta sputtering targets, method of manufacturing the same, and assemblies |
JPH11264885A (en) * | 1998-03-19 | 1999-09-28 | Hitachi Ltd | Highly corrosion resistive hf alloy, neutron absorber for reactor control rod and reactor control rod using the alloy |
US6207589B1 (en) | 1999-07-19 | 2001-03-27 | Sharp Laboratories Of America, Inc. | Method of forming a doped metal oxide dielectric film |
JP2003017491A (en) * | 2001-06-28 | 2003-01-17 | Toshiba Corp | Sputter target, gate insulating film and electronic component |
US6911619B2 (en) * | 2003-03-14 | 2005-06-28 | L'air Liquide, Societe Anonyme Pour L'etude Et, L'exploitation Des Procedes Georges Claude | Plasma cutting torch electrode with an Hf/Zr insert |
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JPS61107728A (en) | 1984-10-31 | 1986-05-26 | Nippon Mining Co Ltd | Thin film forming material and manufacture therefor |
JPS61145828A (en) | 1984-12-20 | 1986-07-03 | Nippon Mining Co Ltd | Sputtering target and manufacture of the same |
JP3103527B2 (en) | 1990-02-15 | 2000-10-30 | 株式会社東芝 | Semiconductor device forming wiring film and semiconductor package |
JP3228660B2 (en) | 1990-02-15 | 2001-11-12 | 株式会社東芝 | Method for producing high-purity metal material for semiconductor element formation |
JPH0860350A (en) | 1990-02-15 | 1996-03-05 | Toshiba Corp | Production of high-purity metallic material, production of sputtering target and formation of wiring net |
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US5772860A (en) * | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
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EP1602745B1 (en) * | 2003-03-07 | 2010-10-27 | Nippon Mining & Metals Co., Ltd. | Hafnium alloy target and process for producing the same |
CN100376696C (en) * | 2003-07-25 | 2008-03-26 | 日矿金属株式会社 | Highly pure hafnium material, target and thin film comprising the same and method for producing highly pure hafnium |
US20060266158A1 (en) * | 2003-11-19 | 2006-11-30 | Nikko Materials Co., Ltd. | High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium |
JP5401849B2 (en) | 2008-06-30 | 2014-01-29 | 山陽色素株式会社 | Pigment dispersion for color filters |
-
2004
- 2004-01-21 EP EP04703909A patent/EP1602745B1/en not_active Expired - Lifetime
- 2004-01-21 JP JP2005502981A patent/JP4203070B2/en not_active Expired - Lifetime
- 2004-01-21 US US10/548,347 patent/US7459036B2/en active Active
- 2004-01-21 CN CNB2004800062568A patent/CN100445420C/en not_active Expired - Lifetime
- 2004-01-21 DE DE602004029768T patent/DE602004029768D1/en not_active Expired - Lifetime
- 2004-01-21 KR KR1020057016325A patent/KR100698744B1/en active IP Right Grant
- 2004-01-21 WO PCT/JP2004/000448 patent/WO2004079039A1/en active Application Filing
- 2004-01-29 TW TW093102008A patent/TWI242047B/en not_active IP Right Cessation
-
2008
- 2008-09-04 US US12/204,069 patent/US8062440B2/en active Active
- 2008-10-28 US US12/259,391 patent/US8241438B2/en active Active
- 2008-10-28 US US12/259,396 patent/US8262816B2/en active Active
Patent Citations (19)
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US4333808A (en) | 1979-10-30 | 1982-06-08 | International Business Machines Corporation | Method for manufacture of ultra-thin film capacitor |
JPS59208044A (en) * | 1983-05-13 | 1984-11-26 | Toshiba Corp | Corrosion-resistant hafnium alloy |
JPS6024342A (en) * | 1983-07-20 | 1985-02-07 | Hitachi Ltd | Control rod for nuclear reactor |
US4619695A (en) | 1983-09-22 | 1986-10-28 | Nihon Kogyo Kabushiki Kaisha | Process for producing high-purity metal targets for LSI electrodes |
US4770948A (en) | 1983-09-22 | 1988-09-13 | Nihon Kogyo Kabushiki Kaisha | High-purity metal and metal silicide target for LSI electrodes |
JPH0215167A (en) | 1988-07-01 | 1990-01-18 | Sumitomo Chem Co Ltd | Magnetron sputtering target |
US5336378A (en) | 1989-02-15 | 1994-08-09 | Japan Energy Corporation | Method and apparatus for producing a high-purity titanium |
US5679983A (en) | 1990-02-15 | 1997-10-21 | Kabushiki Kaisha Toshiba | Highly purified metal material and sputtering target using the same |
US5458697A (en) | 1990-02-15 | 1995-10-17 | Kabushiki Kaisha Toshiba | Highly purified metal material and sputtering target using the same |
US5196916A (en) | 1990-02-15 | 1993-03-23 | Kabushiki Kaisha Toshiba | Highly purified metal material and sputtering target using the same |
JPH05214521A (en) | 1992-01-30 | 1993-08-24 | Tosoh Corp | Titanium sputtering target |
JPH06306597A (en) | 1993-04-23 | 1994-11-01 | Mitsubishi Materials Corp | Ti target material for magnetron sputtering |
US5330589A (en) * | 1993-05-25 | 1994-07-19 | Electric Power Research Institute | Hafnium alloys as neutron absorbers |
JPH1060631A (en) | 1996-08-13 | 1998-03-03 | Kobe Steel Ltd | Titanium-hafnium alloy target material for vapor phase coating |
EP0902102A1 (en) | 1997-09-10 | 1999-03-17 | Japan Energy Corporation | Ta sputtering targets, method of manufacturing the same, and assemblies |
JPH11264885A (en) * | 1998-03-19 | 1999-09-28 | Hitachi Ltd | Highly corrosion resistive hf alloy, neutron absorber for reactor control rod and reactor control rod using the alloy |
US6207589B1 (en) | 1999-07-19 | 2001-03-27 | Sharp Laboratories Of America, Inc. | Method of forming a doped metal oxide dielectric film |
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Title |
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Esp@cenet, One Page English Abstract of JP 04-218912, Aug. 1992. |
Esp@cenet, One Page English Abstract of JP 61-107728, May 1986. |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090194898A1 (en) * | 2001-07-18 | 2009-08-06 | Nippon Mining & Metals Co., Ltd. | Hafnium Silicide Target for Forming Gate Oxide Film, and Method for Preparation Thereof |
US7674446B2 (en) | 2001-07-18 | 2010-03-09 | Nippon Mining & Metals Co., Ltd | Hafnium silicide target for forming gate oxide film, and method for preparation thereof |
US20090229975A1 (en) * | 2007-02-09 | 2009-09-17 | Nippon Mining & Metals Co., Ltd. | Target formed of Sintering-Resistant Material of High-Melting Point Metal Alloy, High-Melting Point Metal Silicide, High-Melting Point Metal Carbide, High-Melting Point Metal Nitride, or High-Melting Point Metal Boride, Process for Producing the Target, Assembly of the Sputtering Target-Backing Plate, and Process for Producing the Same |
US9677170B2 (en) | 2007-02-09 | 2017-06-13 | Jx Nippon Mining & Metals Corporation | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same |
US10344373B2 (en) | 2007-02-09 | 2019-07-09 | Jx Nippon Mining & Metals Corporation | Process for producing a target formed of a sintering-resistant material of a high-melting point metal alloy, silicide, carbide, nitride or boride |
Also Published As
Publication number | Publication date |
---|---|
US8062440B2 (en) | 2011-11-22 |
EP1602745B1 (en) | 2010-10-27 |
TW200420737A (en) | 2004-10-16 |
DE602004029768D1 (en) | 2010-12-09 |
US20060189164A1 (en) | 2006-08-24 |
CN100445420C (en) | 2008-12-24 |
KR20050103973A (en) | 2005-11-01 |
EP1602745A4 (en) | 2009-05-27 |
CN1759202A (en) | 2006-04-12 |
JPWO2004079039A1 (en) | 2006-06-08 |
KR100698744B1 (en) | 2007-03-23 |
US8262816B2 (en) | 2012-09-11 |
JP4203070B2 (en) | 2008-12-24 |
US20090050475A1 (en) | 2009-02-26 |
EP1602745A1 (en) | 2005-12-07 |
TWI242047B (en) | 2005-10-21 |
US20090057142A1 (en) | 2009-03-05 |
WO2004079039A1 (en) | 2004-09-16 |
US8241438B2 (en) | 2012-08-14 |
US20090000704A1 (en) | 2009-01-01 |
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