JPS61107728A - Thin film forming material and manufacture therefor - Google Patents
Thin film forming material and manufacture thereforInfo
- Publication number
- JPS61107728A JPS61107728A JP22766784A JP22766784A JPS61107728A JP S61107728 A JPS61107728 A JP S61107728A JP 22766784 A JP22766784 A JP 22766784A JP 22766784 A JP22766784 A JP 22766784A JP S61107728 A JPS61107728 A JP S61107728A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- thin film
- point metal
- forming
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 15
- 238000010894 electron beam technology Methods 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 21
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 14
- 238000000465 moulding Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 239000003870 refractory metal Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 238000007670 refining Methods 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 230000002285 radioactive effect Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 12
- 239000011733 molybdenum Substances 0.000 abstract description 12
- 238000005477 sputtering target Methods 0.000 abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 5
- 239000007864 aqueous solution Substances 0.000 abstract description 3
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 3
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002751 molybdenum Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 150000003657 tungsten Chemical class 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000012264 purified product Substances 0.000 description 2
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の電極あるいは回路形成用に用い
られるスパッタリングターゲットあるいは真空蒸着材料
などの薄膜形成用材とその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film forming material such as a sputtering target or a vacuum evaporation material used for forming electrodes or circuits of semiconductor devices, and a method for manufacturing the same.
近年、半導体装置用電極あるいは回路にモリブデン、タ
ングステン、ニオブもしくはタンタルなどの高融点金属
、高融点金属合金あるいはそれらのシリサイドなどを用
いる試みが盛んになされている。高融点金属は、抵抗率
が低くかつ耐熱性にすぐれているため、信号の伝搬遅延
がなく、また、半導体装置製造工程中の熱処理温度に容
易に耐えるからである。In recent years, many attempts have been made to use refractory metals such as molybdenum, tungsten, niobium, or tantalum, refractory metal alloys, or silicides thereof for electrodes or circuits for semiconductor devices. This is because high melting point metals have low resistivity and excellent heat resistance, so there is no signal propagation delay, and they easily withstand heat treatment temperatures during the semiconductor device manufacturing process.
従来の技術
しかし、現在一般だ用いられている高融点金属薄膜形成
用材は、せいぜい９９．９１級であ）。2. Prior Art However, the refractory metal thin film forming materials currently in common use are of grade 99.91 at most.
半導体装置特性に悪影響を及ぼすアルカリ金属−（Ｌｉ
、に、Ｎａ）が数千ｐｐｂ含まれ、！た。放射性元素（
Ｕ 、 Ｔｈ ）も数百ｐｐｂ含まれるため、このよう
な薄膜形成用材を用いて製造された半導体装置は、信頼
性に問題を残す。Alkali metals (Li) that have an adverse effect on semiconductor device characteristics
, contains several thousand ppb of Na). Ta. Radioactive elements (
Since it also contains several hundred ppb of U, Th), semiconductor devices manufactured using such thin film forming materials have problems in reliability.
本発明とその構成
本発明者らは、この問題を解決する方策として高純度高
融点金属薄膜形成用材とその製造方法を種々検討した結
果１本発明に至った。The present invention and its structure As a measure to solve this problem, the present inventors have conducted various studies on materials for forming high-purity, high-melting-point metal thin films and methods for manufacturing the same, and as a result, they have arrived at the present invention.
一般に高融点金属加工品の製造においては。Generally in the production of high melting point metal products.
高融点金属粉末の加圧成形、焼結、溶解造塊および成形
加工の各工程を経由するが１本発明者らは溶解造塊工程
に電子ビーム溶解法を適用すること和よって大巾な不純
物除去効果を得ることができ、就中蒸気圧の高い不純物
元素の除去率が著しいことを見出した。Although the high-melting point metal powder passes through each process of pressure molding, sintering, melting and agglomeration, and forming processing, the present inventors applied an electron beam melting method to the melting and agglomeration process. It was found that a removal effect can be obtained, and in particular, the removal rate of impurity elements with high vapor pressure is remarkable.
電子ビーム溶解に供される焼結体は、気泡を内部しない
ことが望ましく、従ってできるだけ内部まで高密度化さ
れていることが必要である。The sintered body subjected to electron beam melting is desirably free of bubbles, and therefore needs to be as dense as possible inside.
それゆえ熱間等圧加圧法を用いることが好適である。
７しかし
ながら、更に高純度化した高融点金属薄膜形成用材を製
造するためには、高融点金属粉末自体を高純度化する必
要がある。不純物によっては真空中あるいは特定の気体
流中で加熱するという手段で金属粉から揮発除去される
場合もあるが、揮発除去の難しい不純物を除くため罠は
湿式精製しなければならない。湿式精製法においては、
高融点金属含有原料を分解して溶液化し、溶液中の不純
物を除去してから高融点金属化合物を採取し、これを還
元することによって高純度高融点金属粉を得る。上記の
分解のための試薬は、できるだけ不純物含量の少ない溶
液の得られるものを用い、用水も精製されたものを用い
ることが望ましい。Therefore, it is preferable to use a hot isopressure method.
7 However, in order to produce a material for forming a high-melting point metal thin film with even higher purity, it is necessary to highly purify the high-melting point metal powder itself. Some impurities can be removed by volatization from the metal powder by heating in a vacuum or in a specific gas stream, but traps must be wet-refined to remove impurities that are difficult to volatilize. In the wet refining method,
A high melting point metal-containing raw material is decomposed into a solution, impurities in the solution are removed, a high melting point metal compound is collected, and this is reduced to obtain a high purity high melting point metal powder. It is desirable to use a reagent for the above-mentioned decomposition that yields a solution with as little impurity content as possible, and to use purified water as well.
一般に薄膜形成用材としては不純物含有率が低い程好ま
しいが、精製コヌトも累加的に増加するので、用途に応
じた純度のものを製造する必要がある。In general, as a material for forming a thin film, the lower the impurity content, the better, but since the amount of refined conut increases cumulatively, it is necessary to manufacture a material with a purity appropriate to the intended use.
本発明においては、叙上のように電子ビーム溶解を中心
とする乾式精製方法と１種々の分解試薬を用いる湿式精
製法を適宜組み合せることＫよシ、市販の薄膜形成用材
よシ数段高純度化されたものを製造することができ、更
に超高純度化されたものを製造することもできる。In the present invention, as mentioned above, a dry purification method centered on electron beam dissolution and a wet purification method using various decomposition reagents are appropriately combined. Purified products can be produced, and even ultra-purified products can also be produced.
本発明は２以上の目的の実現に好適な製造方法と、その
結果得られた薄膜形成用材に関する。The present invention relates to a manufacturing method suitable for achieving two or more objectives, and a thin film forming material obtained as a result.
以下に実施例を示す。Examples are shown below.
実施例
（実施例１）
Ｋｆ：ａ６００ｐｐｂ、Ｎａを１，５００ｐｐｂ、Ｕを
７００ ｐｐｂ含有した市販の９９．９４純度のそりプ
デ、ン粉末を硝酸溶解、水溶液精製、モリブデン醗結晶
採取および水素還元を経由して高純度 ”モリブデ
ン粉末を調製し友。この高純度モリブデン粉末を加圧成
形および焼結したのち、真空溶解してから成形加工する
ことによシ、モリブデン蒸着材を製造した。このモリブ
デン蒸着材の不純物含有率はＫ ３０ ｐｐｂ 、 Ｎ
ａ ２０ ｐｐｂ 、 Ｕｌ ０ ｐｐｂであシ、半
導体装置の電極あるいは回路の形成に使用した場合、十
分に高い信頼性のある半導体装置の製造が可能な良質な
ものであった。Example (Example 1) A commercially available 99.94 purity powder containing 600 ppb of Kf, 1,500 ppb of Na, and 700 ppb of U was dissolved in nitric acid, purified with an aqueous solution, collected with molybdenum crystals, and reduced with hydrogen. We prepared high-purity molybdenum powder through the process.This high-purity molybdenum powder was pressure-molded and sintered, then melted in vacuum and then molded to produce a molybdenum evaporated material.This molybdenum The impurity content of the vapor deposition material is K 30 ppb, N
A20 ppb, Ul0 ppb, and when used for forming electrodes or circuits of semiconductor devices, it was of good quality, allowing manufacture of semiconductor devices with sufficiently high reliability.
（実施例２）
Ｋｔ−ス８００ ｐｐｂ 、 Ｈａを１，２００ｐｐｂ
、Ｕを６５０ｐｐｂ含有した市販の９９．９４純度の三
酸化タングステン粉末を原料として、アンモニアによる
溶解、硝酸による酸調整、タングステン酸結晶採取およ
び水素還元を経由して高純度タングステン粉末を調製し
た。この高純度タングステン粉末を加圧成形および焼結
したのち、真空溶解してから成形加工することによシタ
ングステン蒸着材を製造した。このタングステン蒸着材
の不純物含有率はＫ ４０ ｐｐｂ、Ｎａ ５０ ｐｐ
ｂ。(Example 2) Kt-su 800 ppb, Ha 1,200 ppb
Using a commercially available 99.94 purity tungsten trioxide powder containing 650 ppb of U as a raw material, high purity tungsten powder was prepared through dissolution with ammonia, acid adjustment with nitric acid, collection of tungstic acid crystals, and hydrogen reduction. This high-purity tungsten powder was pressure-molded and sintered, then melted in vacuum and then molded to produce a tungsten vapor-deposited material. The impurity content of this tungsten vapor deposition material is K 40 ppb, Na 50 ppb.
b.
Ｕ １０ ｐｐｂであシ、半導体装置の電極あるいは回
路の形成に使用した場合、十分に高い信頼性のある半導
体装置の製造が可能な良質なものであった。It contained U 10 ppb and was of good quality, allowing production of sufficiently reliable semiconductor devices when used to form electrodes or circuits of semiconductor devices.
（実施例３）
実施例１と同様な市販の９９．９ ’１純度のそりプデ
ン粉末を冷間等圧加圧法で加圧成形し、熱ジ
間等圧加圧法で焼結したのち電子ビーム溶解し。(Example 3) The same commercially available 99.9'1 purity powder as in Example 1 was pressure-molded using a cold isopressure method, sintered using a hot isopressure method, and then subjected to an electron beam process. Dissolve.
生成した高純度モリブデンインゴットを成形加工するこ
と釦よりモリブデンスパッタリングターゲットを製造し
次。このモリブデンスパッタリングターゲットの不純物
含有率は、に２８０ｐｐｂ、 Ｈａ １５０ ｐｐｂ、
Ｕ ８０ ｐｐｂであシ、半導体装置の電極あるいは
回路の形成に使用した場合、十分に高い信頼性のある半
導体装置の製造が可能な良質なものであった。The resulting high-purity molybdenum ingot is then molded into a molybdenum sputtering target. The impurity content of this molybdenum sputtering target is 280 ppb, Ha 150 ppb,
It had a U 80 ppb content and was of good quality, allowing production of sufficiently reliable semiconductor devices when used to form electrodes or circuits of semiconductor devices.
（実施例４）
Ｋｔ−ス５００ ｐｐｂ 、 Ｎａを１，０５０ｐｐ’
ｂ、Ｕを７５０ ｐｐｂ含有した市販の９９．９１純度
のタングステン粉末を冷間等圧加圧法で加圧成形し。(Example 4) Kt-su 500 ppb, Na 1,050 pp'
Commercially available 99.91 purity tungsten powder containing 750 ppb of U was pressure-molded using a cold isostatic pressing method.
熱間等圧加圧法で焼結したのち電子ビーム溶解し、生成
する高純度タングステンインゴットを成形加工すること
によ）タングステンスパッタリングターゲットを製造し
た。このタングステンスパッタリングターゲットの不純
物含有率はに２５０ｐｐｂ、Ｈａ １２０ｐｐｂ、Ｕ８
０ｐｐｂであシ、半導体装置の電極あるいは回路の形成
に使用した場合、十分に高い信頼性のある半導体装置の
製造が可能な良質なものであった。A tungsten sputtering target was manufactured by sintering using a hot isopressure method, followed by electron beam melting, and shaping the resulting high-purity tungsten ingot. The impurity content of this tungsten sputtering target is 250 ppb, Ha 120 ppb, U8
At 0 ppb, it was of good quality and enabled manufacturing of sufficiently reliable semiconductor devices when used to form electrodes or circuits of semiconductor devices.
（実施例５）
実施例１と同様な市販の９９．９ ％純度のモリブデン
粉末を硝酸溶解、水溶液精製、モリブデン酸結晶採取お
よび水素還元を経由して高純度モリブデン粉末を調製し
た。この高純度モリブデン粉末を冷間等圧加圧法で加圧
成形し、熱間等圧加圧法で焼結したのち電子ビーム溶解
し。(Example 5) High purity molybdenum powder was prepared by dissolving commercially available molybdenum powder with a purity of 99.9% as in Example 1 in nitric acid, purifying an aqueous solution, collecting molybdic acid crystals, and reducing with hydrogen. This high-purity molybdenum powder was pressure-formed using a cold isopressure method, sintered using a hot isopressure method, and then electron beam melted.
生成した高純度モリブデンインゴットを成形加工するこ
とによジモリブデンスパッタリングターゲットを製造し
た。このモリブデンスパッタリングターゲットの不純物
含有率はＫ＜１０ｐｐｂ。A dimolybdenum sputtering target was manufactured by molding the resulting high-purity molybdenum ingot. The impurity content of this molybdenum sputtering target is K<10 ppb.
Ｈａ＜１０ ｐｐｂ 、 Ｕ １ ｐｐｂであシ、半
導体装置の電極°あるいは回路の形成に使用した場合、
きわめて信頼性の高い半導体装置の製造が可能な極上質
のものであった。Ha < 10 ppb, U 1 ppb, when used for forming electrodes of semiconductor devices or circuits,
It was of the highest quality and was capable of producing extremely reliable semiconductor devices.
（実施例６）
実施例２と同様な市販の９９．９１純度の三酸化タング
ステン粉末を原料として、アンモニアによる溶解、硝酸
による酸調整、タングステン酸結晶採取および水素還元
を経由して高純度タングステン粉末を調整した。この高
純度タングステン粉末を冷間等圧加圧法で加圧成形し、
熱間等圧加圧法で焼結したのち電子ビーム溶解し。(Example 6) Using the same commercially available 99.91 purity tungsten trioxide powder as in Example 2 as a raw material, high purity tungsten powder was obtained through dissolution with ammonia, acid adjustment with nitric acid, collection of tungstic acid crystals, and hydrogen reduction. adjusted. This high-purity tungsten powder is pressure-molded using a cold isostatic press method.
Sintered using hot isopressure method and then electron beam melted.
生成する高純度タングステンインゴットを成形加工する
ことによりタングステンスパッタリングターゲットを製
造した。このタングステンスパッタリングターゲットの
不純物含有率は、Ｋ＜１０ｐｐｂ、 Ｈａ＜１０ ｐｐ
ｂ、 ＴＪ １ ｐｐ’ｂであシ、半導体装置の電極あ
るいは回路の形成に使用した場合、きわめて信頼性の高
い半導体装置の製造が可能な極上質のものであった。A tungsten sputtering target was manufactured by molding the resulting high-purity tungsten ingot. The impurity content of this tungsten sputtering target is K<10ppb, Ha<10ppb
b, TJ 1 pp'b, and was of the highest quality, allowing the production of extremely reliable semiconductor devices when used to form electrodes or circuits of semiconductor devices.
（参考例）
前記の各実施例によって得られたスパッタリングターゲ
ットを用い電極および回路の形成を行なった結果得られ
た半導体装置の性能試験結上記において、薄膜形成用材
１は実施例１によシ、薄膜形成用材２は実施例２により
製造されたものを示す。(Reference Example) Performance test results of semiconductor devices obtained as a result of forming electrodes and circuits using the sputtering targets obtained in each of the above Examples. The thin film forming material 2 is manufactured according to Example 2.
効果
本発明によれば市販の原料から種々の純度要求に応じた
薄膜形成用材を製造することが可能である。従って、こ
れを用いて電極あるいは回路を形成して得られる半導体
装置は性能の安定した信頼性の高いものとなる。Effects According to the present invention, it is possible to produce thin film forming materials meeting various purity requirements from commercially available raw materials. Therefore, a semiconductor device obtained by forming an electrode or a circuit using this material has stable performance and high reliability.
Claims (6)
いられる高融点金属、高融点金属合金もしくはそれらの
化合物から成る薄膜形成用材であつてそのアルカリ金属
含有率が１，０００ｐｐｂ以下であることを特徴とする
薄膜形成用材。(1) Thin film forming materials made of refractory metals, refractory metal alloys, or compounds thereof used for forming electrodes or circuits of semiconductor devices, and whose alkali metal content is 1,000 ppb or less. Characteristic materials for thin film formation.
いられる高融点金属、高融点金属合金もしくはそれらの
化合物から成る薄膜形成用材であつてその放射性元素含
有率が１００ｐｐｂ以下であることを特徴とする薄膜形
成用材。(2) A thin film forming material made of a high melting point metal, a high melting point metal alloy, or a compound thereof used for forming electrodes or circuits of semiconductor devices, characterized by having a radioactive element content of 100 ppb or less. A material for forming thin films.
いられる高融点金属、高融点金属合金もしくはそれらの
化合物から成る薄膜形成用材であつてそのアルカリ金属
含有率が１，０００ｐｐｂ以下であり、かつ放射性元素
含有率が１００ｐｐｂ以下であることを特徴とする薄膜
形成用材。(3) A thin film forming material made of a high melting point metal, a high melting point metal alloy, or a compound thereof used for forming electrodes or circuits of semiconductor devices, the alkali metal content of which is 1,000 ppb or less, and A thin film forming material characterized by having a radioactive element content of 100 ppb or less.
度高融点金属粉を製造し、該高純度高融点金属粉を加圧
成形、焼結および溶解することによつて高純度高融点金
属塊を得、次いで該金属塊を成形加工することから成る
薄膜形成用材の製造方法。(4) High purity high melting point metal powder is produced by wet refining high melting point metal raw material, and high purity high melting point metal powder is produced by pressure forming, sintering and melting the high purity high melting point metal powder. A method for producing a material for forming a thin film, which comprises obtaining a metal lump and then molding the metal lump.
ーム溶解することによつて高純度高融点金属塊を得、次
いで該金属塊を成形加工することから成る薄膜形成用材
の製造方法。(5) A method for manufacturing a material for forming a thin film, which comprises obtaining a high-purity high-melting point metal ingot by pressure forming, sintering, and electron beam melting a high-melting point metal raw material powder, and then molding the metal ingot. .
度高融点金属粉を製造し、該高純度高融点金属粉を加圧
成形、焼結したのちに電子ビーム溶解することによつて
高純度精製高融点金属塊を得、次いで該金属塊を成形加
工することから成る薄膜形成用材の製造方法。(6) Producing high-purity high-melting point metal powder by wet refining high-melting point metal raw materials, press-molding and sintering the high-purity high-melting point metal powder, and then electron beam melting. A method for producing a material for forming a thin film, which comprises obtaining a highly purified refining metal lump and then molding the metal lump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22766784A JPS61107728A (en) | 1984-10-31 | 1984-10-31 | Thin film forming material and manufacture therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22766784A JPS61107728A (en) | 1984-10-31 | 1984-10-31 | Thin film forming material and manufacture therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61107728A true JPS61107728A (en) | 1986-05-26 |
Family
ID=16864441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22766784A Pending JPS61107728A (en) | 1984-10-31 | 1984-10-31 | Thin film forming material and manufacture therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61107728A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004079039A1 (en) | 2003-03-07 | 2004-09-16 | Nikko Materials Co., Ltd. | Hafnium alloy target and process for producing the same |
| WO2009147900A1 (en) | 2008-06-02 | 2009-12-10 | 日鉱金属株式会社 | Tungsten sintered material sputtering target |
| WO2011040400A1 (en) | 2009-10-01 | 2011-04-07 | Jx日鉱日石金属株式会社 | Method for producing high-purity tungsten powder |
| JP2013159788A (en) * | 2012-02-01 | 2013-08-19 | Jx Nippon Mining & Metals Corp | Method of producing tungsten oxide, and method of producing tungsten employing the same |
| JP2015044739A (en) * | 2014-10-27 | 2015-03-12 | Jx日鉱日石金属株式会社 | Method of producing tungsten oxide |
-
1984
- 1984-10-31 JP JP22766784A patent/JPS61107728A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004079039A1 (en) | 2003-03-07 | 2004-09-16 | Nikko Materials Co., Ltd. | Hafnium alloy target and process for producing the same |
| WO2009147900A1 (en) | 2008-06-02 | 2009-12-10 | 日鉱金属株式会社 | Tungsten sintered material sputtering target |
| WO2011040400A1 (en) | 2009-10-01 | 2011-04-07 | Jx日鉱日石金属株式会社 | Method for producing high-purity tungsten powder |
| US8764877B2 (en) | 2009-10-01 | 2014-07-01 | Jx Nippon Mining & Metals Corporation | Method for producing high-purity tungsten powder |
| JP2013159788A (en) * | 2012-02-01 | 2013-08-19 | Jx Nippon Mining & Metals Corp | Method of producing tungsten oxide, and method of producing tungsten employing the same |
| JP2015044739A (en) * | 2014-10-27 | 2015-03-12 | Jx日鉱日石金属株式会社 | Method of producing tungsten oxide |
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