KR20090110922A - Sputtering target material and sputtering target obtained by using the sputtering target material - Google Patents

Abstract

Provided are a sputtering target material by which generation of arcing can be surely reduced and generation of breakage and cracks is suppressed, and a sputtering target obtained by using the sputtering target material. The substantially board-like sputtering target material has a rectangular sputtering surface, rectangular side surfaces and a rectangular bonding surface. A corner section, which is formed by having at least three surfaces abut to each other among a plurality of surfaces constituting the sputtering target material, is chamfered.

Description

Sputtering target material and sputtering target obtained from this {SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET OBTAINED BY USING THE SPUTTERING TARGET MATERIAL}

The present invention relates to a sputtering target material characterized by chamfering a corner portion, and a sputtering target obtained therefrom.

Conventionally, the sputtering method which can control a film thickness and a component easily is employ | adopted extensively as a film-forming method used at the time of manufacture of electronic component materials, such as a semiconductor, and an electrical component material, for example. As a sputtering target used in such a sputtering method, what bonded the sputtering target material which consists of the material to form a thin film, and the backing plate which consists of a material excellent in electroconductivity and thermal conductivity is generally bonded by a bonding material. Used.

When performing a sputtering process using a sputtering target, it is desired to reduce generation of arcing as much as possible and to perform stable film formation. Moreover, also when manufacturing a sputtering target material, it is calculated | required to improve a yield by suppressing generation | occurrence | production of the crack or crack of the target material.

As target materials in accordance with these demands, Patent Documents 1 to 3 disclose target materials in which chamfering treatment is performed on edge portions. All of these target materials are chamfered in the edge part which consists of two surfaces, such as a sputtering surface and a side surface, for example. However, although these target materials have some improvement effect, it was still not able to reliably reduce the occurrence of arcing. In addition, when producing these target materials, the generation of cracks and cracks in the target materials could not be sufficiently suppressed.

Patent Document 1: Japanese Patent Application Laid-Open No. 11-61395

Patent Document 2: Japanese Patent Application Laid-Open No. 2000-345326

Patent Document 3: Japanese Patent Application Laid-Open No. 2003-55763

[Initiation of invention]

[Problem to Solve Invention]

SUMMARY OF THE INVENTION The present invention has been made on the basis of the above circumstances, and it is possible to reliably reduce the occurrence of arcing, and to provide a sputtering target material having such a sputtering target material and a sputtering target material which is hard to cause cracks and cracks. It is aimed.

[Means for solving the problem]

The sputtering target material of this invention is a substantially plate-shaped sputtering target material which has a rectangular sputtering surface, a rectangular side surface, and a rectangular bonding surface,

A corner portion formed by abutting at least three surfaces among a plurality of surfaces of the sputtering target material has a shape in which chamfering treatment is performed.

C chamfering treatment may be sufficient as the said chamfering process, or R chamfering process may be sufficient as it.

Such chamfering process may be performed in the corner part formed in the sputtering surface side, and may be performed in the corner part formed in the bonding surface side.

Moreover, in the said sputtering target material, the chamfering process may be given to the edge part formed by abutting two surfaces.

As for the sputtering target of this invention, the said sputtering target material and a backing plate are joined by the bonding material, It is characterized by the above-mentioned.

In addition, in the said sputtering target, two or more said sputtering target materials may be provided together.

[Effects of the Invention]

Since the sputtering target material of this invention is chamfered in the corner part formed by abutting at least three surfaces of the some surface which comprises this sputtering target material, a sharp part is formed in the corner part used as the main starting point of arcing generation. It does not have a 形. 部. Therefore, when the sputtering target material of this invention is used, generation | occurrence | production of arcing resulting from a corner part is suppressed effectively, and generation | occurrence | production of arcing is remarkably reduced even if it sees as a whole sputtering target.

Moreover, when the sputtering target material of this invention is used, it becomes possible to suppress the generation | occurrence | production of the crack or crack which arises from generation | occurrence | production of arcing, and can improve the utilization efficiency of a sputtering target material significantly.

As a result, it becomes possible to realize a stable film forming process.

In addition, the plasma of sputtering process may return to a side surface not only in sputter | spatter surface, In such a case, there exists a possibility that arcing resulting from the corner part of a bonding surface side may arise. However, the use of the sputtering target material of the present invention where the chamfering treatment is applied to the corner portion on the bonding surface side can suppress the occurrence of such arcing and effectively prevent the occurrence of cracks and cracks due to the impact of the arcing. have.

Moreover, the sputtering target material of this invention can also effectively prevent the tear of the vacuum pack resulting from the sharp part which exists in a corner part.

1 is a perspective view that is an example of a sputtering target material of the present invention.

2 is a perspective view of a general machined part having a substantially plate shape.

It is an example of the sputtering target material of this invention, and is an enlarged perspective view of the corner part A. (a) is C1 at corner A, (b) is C2 at corner A, and (c) is C3 chamfering at corner A.

It is an example of the sputtering target material of this invention, and is an enlarged perspective view of the corner part A. (a) is R1 at corner A, (b) is R2 at corner A, and (c) is R chamfered at R3 at corner A. FIG.

It is a perspective view which is an example of the conventional sputtering target material. The R chamfering process is performed to the edge parts 33a-33b.

It is a perspective view which is an example of the sputtering target material of this invention. R chamfering treatment is performed on the edge portions 45a to 45c, and R chamfering treatment is performed to the corner portion A. FIG.

7 is a top view of a sputtering target 50 in which a plurality of sputtering target materials 1 are provided together.

It is a figure which shows the evaluation method of the tear at the time of packing in an Example.

[Description of the code]

One… Sputtering target material

2… Sputtering surface

3... side

4… Bonding surface

20... Edge part

22... Corner

23a, 23b, 23c... Edge part

32... Sputtering surface

33a, 33b... side

35a, 35b... Edge part with curved surface by R chamfering process

36... Corner

43a, 43b... side

45a, 45b, 45c... Edge part with curved surface by R chamfering process

50... Sputtering Target (Multi Split Target)

52... Backing plate

60... Vacuum pack film

62... Spring balance

A… Corner part of sputtering target material

B… Corner part of sputtering target 50

X… Ridges formed at the corners

C… The part where the corner part A of each target material in a multi-part target is located

D… The part where the corner part A of each target material in a multi-part target is located

d… Thickness of Sputtering Target Material 1

l… Length from each face abutting

Best Mode for Carrying Out the Invention

EMBODIMENT OF THE INVENTION Hereinafter, the sputtering target material of this invention and the sputtering target manufactured using this are demonstrated in detail, referring drawings as needed.

In this specification, "chamfering process" means the process which gives a slope or round feeling to the angle formed by the intersection of a surface and a surface. In the case of simply "chamfering treatment", the shape of each part formed by the process is not strictly limited. However, in the case of "C chamfering process" and "R chamfering process", the shape of each part formed by each process is limited to the shape which each prescribes.

C chamfering treatment means the processing which cuts the surface and the part which a surface abuts at a predetermined angle, and a predetermined angle is 45 +/- 15 degrees with respect to the surface which abuts normally. The C chamfering treatment of Cα _{% means} a C chamfering treatment in which the ratio (%) of the length from each surface to abut to the thickness of the sputtering target is α. For example, C50 _% means C chamfering process which cuts at an angle of 45 +/- 15 degrees at the point of 5 mm from each surface which abuts, when the thickness of a sputtering target is 10 mm.

The C chamfering treatment of Ca refers to a machining process in which the length from each surface to be contacted is cut at a predetermined angle at the point of amm. For example, C3 is a point where the length from each surface to be contacted is 3 mm. It means the processing radius to cut at a predetermined angle. The predetermined angle is usually 45 ± 15 °.

R chamfering process performs the process which makes a surface and the part which a surface abuts annular shape. R chamfering process in _Rβ% means an R chamfering process for a ratio of length (%) of the radius of the thickness of the sputtering target is processed to the β ring shape. For example, R50 _% means the R chamfering process processed into the ring shape of radius 5mm, when the thickness of a sputtering target is 10 mm.

The C chamfering treatment of Rb means an R chamfering treatment to be processed into an annular shape with a radius of bmm. For example, R3 means an R chamfering treatment to be processed into an annular shape with a radius of 3 mm.

<Sputtering target material>

1: is a perspective view of the sputtering target material 1 which is an example of the sputtering target material of this invention. As shown in FIG. 1, the sputtering target material 1 is a substantially plate-shaped sputtering target material which has the rectangular sputtering surface 2, the rectangular side surface 3, and the rectangular bonding surface 4. As shown in FIG.

The sputtering target material 1 is characterized in that the corner portion A formed by abutting at least three of the plurality of surfaces constituting the sputtering target material 1 has a shape in which chamfering treatment is performed. .

2 is a perspective view of a general machining component having a substantially plate shape. In a machining part etc., an "edge part" means the intersection part of two surfaces, and the edge part 20 is shown by FIG. In a machined part etc., a "corner part" means the site | part containing the intersection of three surfaces, and the corner part 22 is shown by FIG. These definitions are based on JIS B0051-2004.

The corner part A of the sputtering target material 1 is a site | part which three surfaces of the sputtering surface 2, the side surface 3, and the bonding surface 4 abut, and is chamfered. When such a corner part is not chamfered, this corner part will have triangular abstraction containing the intersection of the three edge parts. At the time of performing a sputtering process, if such a triangular abstract corner part exists in a sputtering target material, the incidence rate of arcing will become very high due to this shape. Such arcing may have a flaw in the sputtering target material even if the impact is small. If the impact is large, the sputtering target material may be broken.

The sputtering target material of this invention removes the triangular abstract part which may exist in a corner part by giving a chamfering process to this corner part A, and reduces the generation | occurrence | production of the arcing at the time of sputtering process, and also the flaw and the crack of a sputtering material are prevented. It is to make it possible to prevent.

Specifically, such a chamfering process may be C chamfering process, and R chamfering process may be sufficient.

For example, in FIG. 3, the enlarged perspective view of the sputtering target material 1 of this invention by which C chamfering process was performed to the corner part A is shown. (A) is C1, C chamfering process cuts to 45 degrees, FIG. 3 (b) is C2, C chamfering process cuts to 45 degrees, FIG. 3 (c) is C3, and also 45 degrees It is a figure of the sputtering target material 1 in which C chamfering process to cut by was performed. The thickness of the sputtering target material 1 at this time is 10 mm in all.

As described above, the C chamfering treatment is a machining process of cutting the corner portion A formed by contacting at least three of the plurality of surfaces constituting the sputtering target material 1 at a predetermined angle. The predetermined angle is usually 45 ± 15 °, and preferably 45 °. When such a process is performed, the triangular abstraction portion formed in the corner portion A can be removed by making the three surfaces abut to form a planar shape, and the arcing caused by the triangular abstraction portion located at the corner portion A can be effectively prevented. have. Although FIG.3 (a)-(c) is an example in which neither edge part 20 is chamfered, the edge part can be removed from a viewpoint which can remove the sharp part from the site | part adjacent to corner part A. FIG. It is preferable to perform chamfering processing also to (20).

Such C chamfering treatment may vary depending on the thickness d of the sputtering target material 1, but when the thickness d of the sputtering target material 1 is about 2 to 20 mm, Cα _% (α is It is preferable that it is C chamfering process of 3 to 80 normally, Preferably the number of 3-50 is represented). In the C chamfering treatment of Cα _% , in the corner portion A formed by abutting three surfaces, the length of each side of the triangular surface newly formed by performing C chamfering is the thickness d of the sputtering target material 1 It is C chamfering process which becomes (%) with respect to). Therefore, the C chamfering treatment of Cα _% (α usually represents a number of 3 to 80, preferably 3 to 50) means that each surface abuts against the thickness d of the sputtering target material 1. The ratio (%) of the length (l) from the length l, that is, the ratio of the length (l) of each side of the triangular face newly formed by performing the C chamfering treatment, to the thickness (d) of the sputtering target material (1) 3 to 80 (%), preferably 3 to 50 (%) means C chamfering treatment. Specifically, for example, in the case where the thickness d of the sputtering target material 1 is 10 mm, C _10% means the length from each of the faces to abut, that is, the triangular face newly formed by performing C chamfering treatment. It is C chamfering process whose length l of each side becomes 1 mm.

The C chamfering treatment may be C 0.3 to C5 C chamfering treatment. C chamfering treatment of C0.3 to C5 means C chamfering treatment in which the length (l) of each side of the triangular surface newly formed by performing the C chamfering treatment from each of the faces to be contacted is 0.3 to 5 mm. do. For example, although it may fluctuate according to the thickness d of the sputtering target material 1, about the sputtering target material 1 of C0.3-C4 and thickness 10mm about the sputtering target material 1 of thickness 5mm, It is preferable that it is C chamfering process of C0.3-C5.

Such C chamfering treatment is specifically performed by the method of manual work using a grindstone or paper, a planar grinding mill, a laser processing, a machining process, NC price, a grinder, or an electric discharge process, for example.

4, the enlarged perspective view of the sputtering target material 1 in which R chamfering process was performed to corner part A is shown. Fig. 4 (a) shows the R chamfering treatment of R1, Fig. 4 (b) shows the C chamfering treatment of R2, and Fig. 4 (c) shows the C chamfering treatment of R3. The thickness of the sputtering target material 1 at this time is 10 mm in all.

As described above, the R chamfering treatment is a machining treatment in which the corner portion A formed by contacting at least three of the plurality of surfaces constituting the sputtering target material 1 into an annular shape. When such a process is performed, the triangular abstract portion formed in the corner portion A can be removed by contacting the three surfaces to form a curved surface, and the arcing caused by the triangular abstract portion located at the corner portion A can be effectively prevented. have. 4A to 4C are examples in which neither edge portion 20 is chamfered, but from the viewpoint of removing the sharp portion from the portion adjacent to the corner portion A, these edge portions are shown. It is preferable to perform chamfering processing also to (20).

Such R chamfering treatment may vary depending on the thickness d of the sputtering target material 1, but when the thickness d of the sputtering target material 1 is about 2 to 20 mm, Rβ _% (β is It is preferable that it is R chamfering process of 3 to 80 normally, Preferably the number of 3-50 is represented). In this chamfering treatment, the ratio (%) of the length of the radius r to the thickness d of the sputtering target material 1 is usually 3 to 80 (%), preferably 3 to 50 (%) R chamfering treatment. Means that. Here, for example, in the case where the thickness d of the sputtering target material 1 is 10 mm, R _10% is a process of processing into a ring shape having a length of the radius r of 1 mm. Therefore, as the chamfering treatment, when the thickness of the sputtering target material 1 is 5 mm, an R chamfering treatment with a radius of 0.15 to 4 mm, and when the thickness is 10 mm, an R chamfering treatment with a radius of 0.3 to 8 mm is preferable.

In addition, such R chamfering process may be R chamfering process of R0.3-R5. R chamfering process of R0.3-R5 means R chamfering process whose radius r is 0.3-5 mm in length.

Such R chamfering process is specifically implemented by the method similar to the method employ | adopted by C chamfering process.

The sputtering target material of this invention should just have the shape in which the corner part formed by abutting at least three surfaces is given the above-mentioned chamfering process. For example, if it is a corner part to which the said R chamfering process was performed, the curved shape which forms the corner part should just have a shape which has a curved surface formed in part by the R chamfering process. As a sputtering target material of this invention, it is most preferable that all of the curved shapes which form a corner part are curved surfaces formed by R chamfering process.

In addition, in FIG.3 (b), the shape which gave R chamfering process to the edge parts 23a-23c newly formed by C chamfering process located in the periphery of the corner part which C chamfering process was performed may be sufficient.

Fig. 5 is a perspective view showing an example of a conventional sputtering target material, and R chamfering treatment is performed on edge portions 35a to 35b to which side surfaces 33a to 33b and sputtering surface 32 abut. Chamfering treatment is not performed. 6 is a perspective view showing an example of the sputtering target material 1 of the present invention, and R chamfering treatment is performed on the edge portions 45a to 45c which the side surfaces 43a to 43b and the sputtering surface 2 abut. In addition, R chamfering treatment is given to the corner part. As shown in FIG. 5, even if it is the conventional sputtering target material 10, even if R chamfering process is given to the edge parts 35a-35b, and the curved surface is formed, the edge part 35a, 35b is formed in the corner part 36. As shown in FIG. The ridgeline X resulting from the R chamfering treatment of) is formed. If the sharp portion having such a ridgeline X is present in the corner portion 36 in particular, arcing is likely to occur from the site during sputtering, and arcing is prone to cracking, and the target material There is also a risk of cracking.

However, in the sputtering target material 1 of the present invention, as shown in FIG. 6, the corner portion A formed by contacting the sputtering surface 2 and the three surfaces composed of the side surfaces 43a to 43b is subjected to R chamfering treatment. Since the ridgeline X shown in FIG. 5 does not exist, the sharp portion is not formed in the corner portion A. FIG. Therefore, the occurrence of arcing caused by the ridgeline X can be effectively prevented.

In addition, although FIG. 6 demonstrated the sputtering target material 1 of this invention which performed R chamfering process to corner part A as an example and compared with the prior art example, As mentioned above, the corner part of the sputtering target material 1 of this invention. The chamfering treatment performed to A is not limited to the R chamfering treatment, but may be a C chamfering treatment. However, as a chamfering process performed to corner part A, it is preferable that it is R chamfering process from a viewpoint which removes also the sharp part in the part adjacent to corner part A reliably.

In addition, although FIG. 6 is an aspect in which R chamfering process is given to edge parts 45a-45c, as shown in FIG. 3 and FIG. 4, the aspect which is not chamfering process in an edge part may be sufficient. That is, the sputtering target material 1 of this invention should just be chamfered at least in the corner part A, as shown to FIG. 3-FIG. 4, and also in an edge part from a viewpoint which removes a sharp part more reliably. It is preferable that the chamfering process is performed.

The corner portion A of the sputtering target material 1 is formed net on the sputtering surface 2 side, and is also net formed on the bonding surface 4 side, which is the rear surface side of the sputtering surface 2. If the above-mentioned chamfering process is performed in the corner part A formed in the sputtering surface 2 side which is directly impacted by the sputtering process, generation | occurrence | production of arcing can be suppressed more effectively.

However, the impact of sputtering may reach the side surface of a sputtering target material depending on the sputtering process conditions, and this impact may also be conducted to the bonding surface from the side surface of a target material. In the case of such an impact, if a sharp portion exists in the corner portion A formed on the bonding surface side of the sputtering target material 1, there is a possibility of promoting the occurrence of arcing. In addition, the occurrence of this arcing may also cause cracking or cracking of the sputtering target material 1. Therefore, it is preferable to perform chamfering process to the corner part A formed in the bonding surface side of the sputtering target material 1, and to remove the sharp part which may cause the arcing.

A sputtering target can be manufactured by joining the sputtering target material 1 with a backing plate in the bonding surface with a bonding material. Although the manufactured sputtering target was packaged with a vacuum pack at the time of shipment, since a sharp part exists in a corner part in the conventional sputtering target, the tearing of a vacuum pack was frequent. However, since the sputtering target material 1 of this invention is chamfered in the corner part A, the sharp part is removed from a corner part, and the tearing of a vacuum pack can be reduced.

There is no restriction | limiting in particular as a material of the sputtering target material 1 of this invention, Metal oxide which has In or Sn as a main component, such as Indium-Tin-Oxide (ITO), aluminum, copper, titanium, chromium, molybdenum, AZO ( Aluminum zinc oxide); and the like. Among them, ITO (Indium-Tin-Oxide), which is a material used for film formation for flat panel displays, in which a large size of the target size is strongly required, is suitable.

<Sputtering target>

The sputtering target of this invention is manufactured by bonding one sputtering target material 1 mentioned above to a backing plate with a bonding material normally. As a material of a backing plate, it does not specifically limit, Pure copper excellent in electroconductivity and thermal conductivity, a copper type alloy, etc. are used suitably. As a material of a bonding material, it depends also on the material of a sputtering target material and a backing plate, and is not specifically limited, For example, soldering alloys, such as In type | system | group, Sn type | system | group, Ag type | system | group, Zn type | system | group, a brazing material, resin, etc. are used. .

In addition, as shown in the top view of the sputtering target 50 of FIG. 7, the sputtering target of this invention provides a plurality of sputtering target materials 1 in parallel, and these sputtering target materials 1 In the bonding surface, the sputtering target 50 produced by bonding to the backing plate 52 using a bonding material, what is called a multi-split target, may be sufficient. In this case, although the corner part A is formed in several places in each sputtering target material 1, the chamfering process mentioned above in the corner part B formed in at least the sputtering target 50 among these several corner parts A is mentioned. Should be carried out. However, it is preferable that the chamfering process is performed also in the corner part A formed in each sputtering target material 1 from a viewpoint which can suppress the occurrence of arcing more reliably. In addition, as shown in FIG. 7, although the site | part in which these corner parts A are located is largely divided into the site | part C and the site | part D, it is employ | adopted which corner part A located in which site | part is to be chamfered. What is necessary is just to determine according to the compatibility with the sputtering apparatus to make.

By doing in this way, the sharp part formed in the corner | angular part B of the sputtering target which may be the cause of the arcing most at the time of sputtering process can be removed, and it becomes possible to prevent the occurrence of arcing more effectively.

Hereinafter, although this invention is demonstrated further more concretely based on an Example, this invention is not limited to these Examples.

Moreover, it evaluated according to the following evaluation items using the obtained sputtering target material.

<< defect at the time of bonding >>

The obtained sputtering target material was bonded (bonded) to the backing plate made of oxygen-free copper using the bonding material (pure In). This sputtering target material was peeled from the backing plate, and was bonded again using the bonding material (pure In). This bonding was repeated 10 times and the presence or absence of the flaw which arose in the sputtering target material was confirmed.

(Circle): The flaw did not generate | occur | produce at all in the edge part pole of the bonding surface.

(Triangle | delta): 1-3 defects generate | occur | produced in the edge part pole of a bonding surface.

×: 4 or more flaws occurred in the edge portion pole of the bonding surface

<< tearing at the time of packing >>

The vacuum-packed sputtering target is usually loaded with a load of about 500 g during the folding operation, packaging stroke, or handling stroke of the excess portion of the film for vacuum packs.

Therefore, as shown in FIG. 8, evaluation of the tear at the time of packing is vacuum-packing the obtained sputtering target material using the vacuum pack film (polypropylene-polyethylene 2-layer structure film) of thickness 100micrometer, and bonding an upper surface. The surface and the lower surface were arranged as sputtering surface. Subsequently, the excess part of the film for vacuum packs was pulled by the force of 500g in the arrow direction (vertical direction) from upper surface using the spring balance 62, and it checked by the presence or absence of the tear of the vacuum pack at that time.

○: No tearing occurred in the vacuum pack

×: tearing occurred in the vacuum pack

`` Number of arcing occurrences ''

Using the obtained sputtering target, the sputtering process was performed under the sputtering conditions shown below, and the number of arcing occurrence was counted by the arcing counter ((microArc Monitor MAM Genesis, Inc.)).

Sputter Condition

Process pressure = 0.4Pa

Input power amount = 3W / cm ²

Sputter time = 3 hours

Deposition temperature = room temperature

Example 1

As shown in Fig. 6, a width of 150mm × 635mm length × approximately plate-shaped ITO sputtering target material having a thickness of 10mm (SnO ₂ = 10wt%, the relative density of 99.8%) to produce a, R1 chamfering of the edge portion (45a~45c) While the treatment was performed, the chamfering treatment of R1 was performed on the four corner portions A located on the sputtering surface 2.

Next, the sputtering target material 1 was bonded to the backing plate (230x750x20mm) made of oxygen-free copper using the said bonding material, and the sputtering target was produced. Each said evaluation item was evaluated using the obtained sputtering target. The obtained results are shown in Table 1.

Comparative Example 1

As shown in Fig. 5, an approximately plate-shaped ITO sputtering target material (SnO ₂ = 10wt%, relative density 99.8%) having a width of 150 mm x length 635 mm x thickness 10 mm was fabricated, and the chamfering of R1 in the edge portions 35a to 35b. The process was carried out.

Next, the sputtering target was produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

Example 2

The ITO sputtering target material which consists of the material shown in Table 1 is produced, C0.3 chamfering process is performed to the four corner parts A located in the sputtering surface 2, and the edge part and corner which are located in a bonding surface The part was subjected to the chamfering treatment of C0.5.

Next, the sputtering target was produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

Comparative Example 2

The ITO sputtering target material which consists of a material shown in Table 1 was produced, and the edge part and the corner part were not chamfered at all.

Next, the sputtering target was produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

[Examples 3 to 9 and Comparative Examples 3 to 5]

The ITO sputtering target material which consists of materials shown in Table 1 was produced, and the chamfering process was performed to the edge part or corner part according to the content shown in Table 1.

Next, the sputtering target was produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

Example 10

_Two roughly plate-shaped ITO sputtering target materials (SnO ₂ = 10wt%, relative density 99.7%) of width 150mm x length 635mm x thickness 10mm were made, and R1 chamfering treatment was performed on the edge portions 45a to 45c. In addition, C3 chamfering process was performed to the edge part and corner part which are located in a bonding surface.

Subsequently, these two sputtering target materials were bonded to the backing plate using the said bonding material, and the multi-sputtering sputtering target in which two sputtering target materials were provided in parallel was produced. The two sputtering target materials were arrange | positioned so that each long side may align in parallel, and the space | interval was 0.3 mm. About the sputtering surface, the chamfering process of R1 was performed to the corner part B, and the chamfering process was also performed to the corner part A located in the division part which two sputtering target materials oppose. Each said evaluation item was evaluated using the obtained multidivided sputtering target. The obtained results are shown in Table 1.

Example 11

The chamfering process of the edge part and the corner part which are located in a sputtering surface and a bonding surface is according to the content shown in Table 1, and the corner part A which is located in the division part which two sputtering target materials replace is not subjected to chamfering process, In the same manner as in Example 10, a multi-sputtered sputtering target was produced. Each said evaluation item was evaluated using the obtained multidivided sputtering target. The obtained results are shown in Table 1.

Example 12

Four sheets of plate-shaped ITO sputtering target material (SnO ₂ = 10wt%, relative density 99.5%) having a width of 150 mm x 635 mm x 10 mm thickness are fabricated, and C0.3 chamfering is performed on the edge portion located on the bonding surface. did.

Subsequently, these four sputtering target materials were bonded to the backing plate using the said bonding material, and the multi-sputtering sputtering target with four sputtering target materials provided in parallel was produced. The four sputtering target materials were arrange | positioned so that each two sides may align in parallel with two sides of another sputtering target material, and the space | interval was 0.3 mm. About the sputtering surface, C2 chamfering process was performed to the corner part B, and the corner part A located in the division part which four sputtering target materials oppose was not chamfered. Each said evaluation item was evaluated using the obtained multidivided sputtering target. The obtained results are shown in Table 1.

Example 13

A multi-split sputtering target was produced in the same manner as in Example 12 except that the chamfering treatments of the edge portions and the corner portions positioned on the sputtering surface and the bonding surface were performed in accordance with the contents shown in Table 1. Each said evaluation item was evaluated using the obtained multidivided sputtering target. The obtained results are shown in Table 1.

[Examples 14 to 15]

Instead of the ITO sputtering target material, SnO ₂ -5wt% Ta ₂ O ₅ target material (98% relative density, width 150mm x length 635mm x thickness 6mm) was produced to chamfer edges and corners located on the sputtering surface and the bonding surface. Except having performed the process according to the content shown in Table 1, the sputtering target was produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

[Examples 16 to 17]

Instead of the ITO sputtering target material, ZnO-2wt% Al ₂ O ₃ target material (99% relative density, 150mm width × 635mm length × 10mm thickness) was produced, and the chamfering treatment of the edge portion and corner portion located on the sputtering surface and the bonding surface A sputtering target was produced like Example 1 except having performed according to the content shown in Table 1, and each evaluation was performed. The obtained results are shown in Table 1.

Example 18, Comparative Example 6

Instead of the ITO sputtering target material, a ZnO-2wt% Ga ₂ O ₃ target material (99% relative density, 150mm width x 635mm length x 7mm thickness) was produced, and the chamfering treatment of the edge portion and the corner portion located on the sputtering surface and the bonding surface was performed. A sputtering target was produced like Example 1 except having performed according to the content shown in Table 1, and each evaluation was performed. The obtained results are shown in Table 1.

Example 19, Comparative Example 7

An Al target material (purity 99.999%, width 150mm x length 635mm x thickness 16mm) was manufactured in place of the ITO sputtering target material, and the chamfering treatment of the edge and corner portions located on the sputtering surface was carried out according to the contents shown in Table 1. And the sputtering target were produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

Example 20, Comparative Example 8

Cu target materials (purity 99.999%, width 150mm x length 635mm x thickness 2mm) were manufactured instead of the ITO sputtering target material, and the chamfering treatment of the edge and corner portions located on the sputtering surface was carried out according to the contents shown in Table 1. And the sputtering target were produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

Example 21, Comparative Example 9

Mo target materials (purity 99.95%, width 150mm x length 635mm x thickness 4mm) were manufactured instead of the ITO sputtering target material, and the chamfering treatment of the edge and corner portions located on the sputtering surface was carried out according to the contents shown in Table 1. And the sputtering target were produced like Example 1, and each evaluation was performed. The obtained results are shown in Table 1.

TABLE 1

Claims (13)

In a substantially plate-shaped sputtering target material having a rectangular sputtering surface, a rectangular side surface and a rectangular bonding surface, A sputtering target material having a shape in which a corner portion formed by abutting at least three surfaces of a plurality of surfaces of the sputtering target material is subjected to chamfering treatment. The method of claim 1, Said chamfering process is C chamfering process, The sputtering target material characterized by the above-mentioned. The method of claim 2, The C chamfering treatment is a C chamfering treatment of Cα _% ; ((Alpha ₎ in said C (alpha) _% shows the number of 3-80.). The method of claim 2, Said C chamfering process is C0.3-C5 and is C chamfering process cut at 45 degrees, The sputtering target material characterized by the above-mentioned. The method of claim 1, Said chamfering process is R chamfering process, The sputtering target material characterized by the above-mentioned. The method of claim 5, The sputtering target material, wherein the R chamfering treatment is an R chamfering treatment of R β _% ; ((Beta ₎ in said R (beta) _% represents the number of 3-80.). The method of claim 5, Said R chamfering process is R 0.3 chamfering process of R0.3-R5, The sputtering target material characterized by the above-mentioned. The method according to any one of claims 1 to 7, The said chamfering process is performed in the corner part provided in the sputtering surface side, The sputtering target material characterized by the above-mentioned. The method according to any one of claims 1 to 8, The said chamfering process is performed in the corner part formed in the bonding surface side, The sputtering target material characterized by the above-mentioned. The method according to any one of claims 1 to 9, A sputtering target material, wherein a chamfering treatment is applied to an edge portion formed by abutting two surfaces. The method according to any one of claims 1 to 10, A sputtering target material, comprising ITO (Indium-Tin-Oxide). The sputtering target material of any one of Claims 1-10 and a backing plate are joined together via a bonding material, The sputtering target characterized by the above-mentioned. The method of claim 12, The sputtering target material in any one of Claims 1-10 is provided in multiple numbers, The sputtering target characterized by the above-mentioned.

Images