JPS63227774A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPS63227774A JPS63227774A JP6038787A JP6038787A JPS63227774A JP S63227774 A JPS63227774 A JP S63227774A JP 6038787 A JP6038787 A JP 6038787A JP 6038787 A JP6038787 A JP 6038787A JP S63227774 A JPS63227774 A JP S63227774A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- sputtering target
- powder
- same composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000005219 brazing Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000000945 filler Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000013077 target material Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011949 advanced processing technology Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
〔航業上の利用分野〕
本発明は、スパッタリング用ターゲットの構造に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Aviation Application] The present invention relates to the structure of a sputtering target.
特に多元素同時スパッタリングにおけるスパッタリング
用ターゲットにおいて、複数の小部分を継ぎ合せ所定の
大きさ、形状を構成するターゲット（以後複合ターゲッ
トと記す）が多く提案されている１例えば、特開昭５４
−１４３７８０．特開昭５６−１６９７７５．特開昭５
８−１００６７９等がある。金−間化合物等の脆い組成
でできているターゲットは、加工時の取扱い、あるいは
、スパッタ時の熱歪等により割れ、ヒビ等が入りやすく
、一枚のターゲットによる大面積化は難しく、上記の複
合ターゲットによる大面積化が育効な手段となっている
。又複数の組成の小片を組み合せた複合ターゲットも注
目されている。In particular, as sputtering targets for multi-element simultaneous sputtering, many targets have been proposed in which a plurality of small parts are joined together to form a predetermined size and shape (hereinafter referred to as composite target)1.
-143780. Japanese Patent Publication No. 56-169775. Japanese Patent Application Publication No. 5
8-100679 etc. Targets made of brittle compositions such as intermetallic gold compounds are prone to breakage and cracking due to handling during processing or thermal distortion during sputtering, making it difficult to increase the area using a single target. Enlarging the area using composite targets is an effective means of growth. Composite targets that combine small pieces of multiple compositions are also attracting attention.
しかしこのような、複合ターゲットにおいてスパッタ時
に継ぎ目より、ロウ材や、バッキングプレート材がスパ
ッタされ、成膜の特性を、著しく低下させるという問題
を有した。これを解決するため、第５図（α）に示すよ
うに小片を斜めに切断する方法やｃｂ＞のように段にし
て組み合せ、ロウ材や、バッキングプレート材が１）１
！スパツタされないようにする方法が提案されていた８
図中３０１．５０４はターゲット、３０２はロウ材、３
０３はバッキングプレート。However, such a composite target has a problem in that the brazing material and the backing plate material are sputtered from the joints during sputtering, which significantly deteriorates the film forming characteristics. In order to solve this problem, as shown in Fig. 5 (α), we cut the small pieces diagonally or combined them in stages as shown in cb>.
! A method was proposed to prevent getting spattered.8
In the figure, 301.504 is the target, 302 is the brazing material, and 3
03 is the backing plate.
しかし、前述の従来技術では第３図（α）、（ｂ）のよ
うな形状を製作するのは、金属間化合物等の脆い組成で
、できているターゲットにおいては高度な加工技術が髪
求される。又第４図（α）（ｂ）のように、二ロージ箇
ンが進行すると継ぎ目より、ロウ材、バッキングプレー
ト材がスパッタされるため、ターゲットの利用効率が低
下する問題を有していた。However, in the conventional technology described above, the shapes shown in Figures 3 (α) and (b) are produced using brittle compositions such as intermetallic compounds, and the targets made of such materials require advanced processing techniques. Ru. Further, as shown in FIGS. 4(a) and 4(b), when the two rows progress, the brazing material and backing plate material are sputtered from the joint, resulting in a problem that the target utilization efficiency is reduced.
図中４０１．４０４はターゲット、４０２はロウ材、４
０３はバッキングプレートである。In the figure, 401 and 404 are targets, 402 is a brazing material, and 4
03 is a backing plate.
そこで、本発明は従来のこのような問題点を解決するた
めのエロージ肩ンが進行しても、ロウ材、バッキングプ
レート材がスパッタされることもなく、高度の加工技術
も必％としないスパッタリング用ターゲットを得ること
を目的としている。Therefore, the present invention aims to solve these conventional problems by providing a sputtering method that does not require sputtering of the brazing material or backing plate material even if the erosion shoulder progresses, and does not require advanced processing technology. The purpose is to obtain a target for use.
上記問題点を解決するために、本発明のスパッタリング
用ターゲットは、複数の小部分を継ぎ合わせることによ
り所定の大きさ、形状を構成するスパッタリング用ター
ゲットにおいて、継ぎ合わせ部にターゲットと同組成の
粉末を充填することを特徴とする。In order to solve the above problems, the sputtering target of the present invention is a sputtering target that has a predetermined size and shape by joining together a plurality of small parts, and the sputtering target has a powder having the same composition as the target in the joined part. It is characterized by being filled with.
本発明の上記の構成によれば、エロージヨンが進行して
も、プラズマは、ロウ材やバッキングプレート材に直接
接りすることはなく、ターゲットと同組成の材料をスパ
ッタするので、成膜中にロウ材やバッキングプレート材
が混入することがない。According to the above configuration of the present invention, even if erosion progresses, the plasma does not come into direct contact with the brazing material or the backing plate material, and sputters a material having the same composition as the target, so that There is no chance of contamination with wax or backing plate material.
第１図は、本発明実施例におけるスパッタリング用ター
ゲットである。１０１はターゲツト材であり本実施例に
おいては、希土類−遷移金目系金属間化合物であり脆い
材質である。これを任意のターゲット形状に加工し、継
ぎ合わせ部をターゲットのスパッタされる面に垂直に加
工する。このターゲツト材のロウ材１０２と接触する面
をメタライズイングを行ない、ロウ材とのロウ付性を改
良した後、ターゲツト材１０１とバッキングプレー）１
０５をロウ材１０２を介しロウ材を行なう、ロウ付後継
ぎ合わせ部にターゲツト材と同組成の粉末１０４を充填
する。このスパッタリング用ターゲットを用いスパッタ
リングを行なったところ、二ロージ１ンがかなり進行し
ても継ぎ合わせ部から直接ロウ材がプラズマに露出する
ことなく成膜に、ロウ材あるいは、バッキングプレート
材が混入がなくこれを第２図に示す。２０１はターゲツ
ト材、２０２はロウ材、２０５はバッキングプレート、
２０４は充填粉末。また第３図の様に継ぎ合わせ部を複
雑な加工をしなくても成膜への混入物はなかった。FIG. 1 shows a sputtering target in an embodiment of the present invention. Reference numeral 101 denotes a target material, which in this embodiment is a rare earth-transition metal intermetallic compound and is a brittle material. This is processed into an arbitrary target shape, and the joint portion is processed perpendicular to the surface of the target to be sputtered. After metalizing the surface of this target material that comes into contact with the brazing material 102 to improve the brazing properties with the brazing material, the target material 101 and the backing plate)1
05 is brazed through a brazing material 102. After brazing, a powder 104 having the same composition as the target material is filled into the joint portion. When sputtering was performed using this sputtering target, it was found that even if the second solder plate progressed considerably, the solder metal was not directly exposed to the plasma from the spliced part, and the solder metal or backing plate material did not get mixed into the film. This is shown in Figure 2. 201 is a target material, 202 is a brazing material, 205 is a backing plate,
204 is a filling powder. Moreover, as shown in FIG. 3, no contaminants were introduced into the film even if the joint portion was not subjected to complicated processing.
本実施例においては、継ぎ合わせ部をスパッタリング面
に対して垂直に切断したが本発明は、当然従来（第３図
）の様な複雑な加工を施した場合にも応用できる。In this embodiment, the joint portion is cut perpendicularly to the sputtering surface, but the present invention can of course be applied to cases where complicated processing as in the conventional method (FIG. 3) is performed.
以上述べたとうり本発明によれば、複数の小部分を継ぎ
合わせることにより所定の大きさ、形状を構成するスパ
ッタリング用ターゲットにおいて、継ぎ合わせ部にター
ゲットと同組成の粉末を充填することにより、ターゲッ
ト継ぎ合わせ部が単純な構造でよく、エロージヨンが進
行しても継ぎ合わせ部から、ロウ材、バッキングプレー
ト材が直接プラズマに接触することなく、ターゲットの
利用効率は、かなり上昇する。As described above, according to the present invention, in a sputtering target configured to have a predetermined size and shape by joining a plurality of small parts, the sputtering target can be formed by filling the joint part with powder having the same composition as the target. The joint part may have a simple structure, and even if erosion progresses, the brazing material and the backing plate material will not come into direct contact with plasma from the joint part, and the target utilization efficiency will be considerably increased.
８ｇ１図は本発明のスパッタリングターゲットの一実施
例を示す主要断面図。
第２図は本発明のスパッタリングターゲットの二ロージ
１ンが進行した一実施例を示す主要断面図。
第６図は従来のスパッタリングターゲットの主要断面図
。α、ｂは、継ぎ合わせ部の形状がちがっている。
第４図は従来のスパッタリングターゲットの二ロージ１
ンが進行した様子を示す主留断面図。
以上
出願人 セイコーエプソン株式会社
代理人 弁理士最上筋（他１名）
ノ″
第２図Figure 8g1 is a main sectional view showing an embodiment of the sputtering target of the present invention. FIG. 2 is a main cross-sectional view showing an embodiment of the sputtering target of the present invention in which two stages have progressed. FIG. 6 is a main cross-sectional view of a conventional sputtering target. α and b differ in the shape of the joint portion. Figure 4 shows two conventional sputtering targets.
Fig. 3 is a cross-sectional view of the main clasp showing how the engine progresses. Applicant Seiko Epson Co., Ltd. Agent Patent Attorney Mogamisuji (1 other person) ノ'' Figure 2
Claims (1)
形状を構成するスパッタリング用ターゲットにおいて、
継ぎ合わせ部にターゲットと同組成の粉末を充填するこ
とを特徴とするスパッタリング用ターゲット。A predetermined size is achieved by joining multiple small parts together.
In the sputtering target that makes up the shape,
A sputtering target characterized by filling the joint portion with powder having the same composition as the target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6038787A JPS63227774A (en) | 1987-03-16 | 1987-03-16 | Sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6038787A JPS63227774A (en) | 1987-03-16 | 1987-03-16 | Sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63227774A true JPS63227774A (en) | 1988-09-22 |
Family
ID=13140683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6038787A Pending JPS63227774A (en) | 1987-03-16 | 1987-03-16 | Sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63227774A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7652223B2 (en) * | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
| US20130081944A1 (en) * | 2011-09-29 | 2013-04-04 | H.C. Starck, Inc. | Large-area sputtering targets |
| WO2014131458A1 (en) * | 2013-02-28 | 2014-09-04 | Applied Materials, Inc. | Gapless rotary target and method of manufacturing thereof |
| US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
| US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
-
1987
- 1987-03-16 JP JP6038787A patent/JPS63227774A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7652223B2 (en) * | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
| US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
| US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
| US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| US20130081944A1 (en) * | 2011-09-29 | 2013-04-04 | H.C. Starck, Inc. | Large-area sputtering targets |
| WO2013049274A3 (en) * | 2011-09-29 | 2013-06-06 | H.C. Starck, Inc. | Large -area sputtering targets |
| US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
| US9120183B2 (en) | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
| US9293306B2 (en) | 2011-09-29 | 2016-03-22 | H.C. Starck, Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
| US9412568B2 (en) * | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
| WO2014131458A1 (en) * | 2013-02-28 | 2014-09-04 | Applied Materials, Inc. | Gapless rotary target and method of manufacturing thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6709557B1 (en) | Sputter apparatus for producing multi-component metal alloy films and method for making the same | |
| JPH01290765A (en) | Sputtering target | |
| JPS63227774A (en) | Sputtering target | |
| JP2003516473A5 (en) | ||
| US20050061857A1 (en) | Method for bonding a sputter target to a backing plate and the assembly thereof | |
| JPH0748667A (en) | Sputtering target having high joining strength | |
| JPS63100177A (en) | Target for sputtering | |
| JP6110224B2 (en) | Target assembly and manufacturing method thereof | |
| JP2898515B2 (en) | Mosaic target | |
| JPH04333565A (en) | Sputtering target and manufacture therefor | |
| US20110244262A1 (en) | Metal Bonding Member and Fabrication Method of the Same | |
| JPS6442370A (en) | Method for joining ceramics and metal | |
| JPS62243762A (en) | Backing plate for sputtering target | |
| JPH0428866A (en) | Method for bonding sputtering target | |
| JPS62222060A (en) | Target for sputtering | |
| JPH0459075B2 (en) | ||
| JP2679268B2 (en) | Manufacturing method of brazing material | |
| JPS6024752B2 (en) | Method for manufacturing metal composite materials for decorative parts | |
| JPH02267261A (en) | Production of target for sputtering | |
| JP2605841B2 (en) | Manufacturing method of brazing material | |
| JPS61227166A (en) | Bismuth or bismuth-containing target for sputtering | |
| JP2650460B2 (en) | Joining method of alumina ceramic and metal | |
| JPH07316802A (en) | Mosaic target and its production | |
| JPH0712567B2 (en) | Single crystal diamond chip | |
| JP2001225176A (en) | Producing method for hip joined body of beryllium and copper alloy and hip joined body |