JPS63100177A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS63100177A JPS63100177A JP24462386A JP24462386A JPS63100177A JP S63100177 A JPS63100177 A JP S63100177A JP 24462386 A JP24462386 A JP 24462386A JP 24462386 A JP24462386 A JP 24462386A JP S63100177 A JPS63100177 A JP S63100177A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- sputtering
- bit
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title abstract description 8
- 238000005304 joining Methods 0.000 claims abstract description 4
- 238000005477 sputtering target Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 22
- 239000013077 target material Substances 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- 238000011949 advanced processing technology Methods 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001007 puffing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業−にの利用分野〕
本発明は、スパッタリング用ターゲットの（Ｉ′７造に
閃する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is inspired by the construction of a sputtering target (I'7).
特に多元素同時スパッタリングにおけるスパッタリング
用ターゲットにおいて、複数の小部分を継ぎ合せ所定の
大きさ、形状を構成するターゲット（以後複合ターゲッ
トと紀ず）が多く提メされている０例えば、特開昭５４
−１４３７８０、特開昭５０−１０９７７３、特ＣＩ昭
５８−１０００７９等がある。金ｒ４間化合物等の脆い
組成でできているターゲットは、加工時の取扱い、ある
いは、スパツタ時の熱歪等により割れ、ヒビ等が入りや
ず（、一枚のターゲットによる大面積化は難しく、」−
記の複合ターゲットによる大面積化がイ「効な手段とな
っている。又複数の組成の小片を組み合せた複合ターゲ
ットも注目されている。In particular, as sputtering targets for simultaneous multi-element sputtering, many targets have been proposed in which multiple small parts are joined together to form a predetermined size and shape (hereinafter referred to as composite target).
-143780, Japanese Unexamined Patent Publication No. 50-109773, Special CI No. 58-100079, etc. Targets made of brittle compositions such as gold-r4 intercompounds do not break or crack due to handling during processing or thermal strain during sputtering (it is difficult to increase the area using a single target). ”−
Increasing the area using the composite target described above has become an effective means.Composite targets that combine small pieces of multiple compositions are also attracting attention.
しかしこのような複合ターゲットにおいては継ぎＬｌよ
り、ｒｌつ材や、バフ、トングプレート材がスパックさ
れ、成鮫の特性を、著しく低下させるという問題を要し
た。これを解決するため、第２は１（ａ）に示すように
小片を斜めにカットする方法や（ｌ））のように段にし
て組み合せ、ロウ材や、パフキングプレート材が直接ス
パックされないようにする方法が提察されていた。However, in such a composite target, the rl material, buff, and tongue plate material are spucked from the joint Ll, resulting in a problem that the characteristics of the adult shark are significantly deteriorated. In order to solve this problem, the second method is to cut the small pieces diagonally as shown in 1(a), or to combine them in stages as shown in (l)) to prevent the wax material and puffing plate material from being spun directly. A method was proposed to do so.
しかし、前述の従来技術では第２２Ｒ１（ａ）（ｂ）の
ような形状を製作するのは、金属間化合物等の脆い組成
で、できているターゲットにおいては高度な加工技術が
要求される、又第３図（ａ）（ｂ）のように、エロージ
ョンにより掘り下げられ継ぎ目より、ロウ材、バッキン
グプレート材がスパックされ、ターゲットの使用効率が
低下する問題点を任していた。However, in the above-mentioned conventional technology, it is difficult to manufacture shapes like No. 22R1(a) and (b) using brittle compositions such as intermetallic compounds. As shown in FIGS. 3(a) and 3(b), the brazing material and the backing plate material are spun from the seams dug by erosion, resulting in a problem in which the efficiency of target use is reduced.
奇こで、本発明は従来のこのような問題点を解決するた
め、工１−ジ３ンにより掘り下げられても、ＬＩつ材、
バッキングプレート材がスパックされることもなく、高
度の加工技術も必要としないスパッタリング用ターゲッ
トを得ることを目的としている。Strangely enough, in order to solve these conventional problems, the present invention has been developed to solve the problems of the conventional method.
The objective is to obtain a sputtering target that does not require sputtering of backing plate material and does not require advanced processing technology.
土コご問題点を解決するために、本発明のスパッタリン
グ用ターゲットは、複数の小部分を継ぎ合せることによ
り所定の大きさ、形状を構成するスパッタリング用ター
ゲットにおいて、継ぎ合せ部の真、下のパフ、トングプ
レート上に、溝を形成し、その溝にターゲットと同じ組
成の小片を埋め込むことを特徴とする。In order to solve the problem of earthworks, the sputtering target of the present invention has a sputtering target that forms a predetermined size and shape by joining a plurality of small parts. It is characterized by forming grooves on the puff and tong plates, and filling the grooves with small pieces having the same composition as the target.
本発明の」二期の（１■成によれば、工１−ジョンが進
行しても、ロウ材や、バッキングプレート材はプラズム
に対して、直接にあたらないので成臆申ニ、１コウ材や
、バッキングプレート材が混入することがないのである
。According to the second phase (1) of the present invention, even if the process 1 progresses, the soldering material and backing plate material do not come into direct contact with the plasma. There is no chance of contamination with materials or backing plate materials.
（実施例〕
第１図は本発明の実施例における、スパッタリング用タ
ーゲットの断面図である。バッキングブレー）（１０４
）上に角形の溝を形成し、この溝にスパックリング用タ
ーゲツト材（１０２）を埋め込む、とのｎ！ｉスパッタ
リング用ターゲット材（１０２）は、バッキングプレー
ト（１０４）の面より、０ 、 １ ｍｍ下げ、その真
上に、スパッタリング用ターゲツト材（１０１）の小片
を乗せて、１つ材（１０３）が埋め込んだスパッタリン
グ°用ターゲット材（１０２）の上までこないようにし
て、ボンディングする。(Example) Fig. 1 is a sectional view of a sputtering target in an example of the present invention.
), a rectangular groove is formed on the top, and a spackling target material (102) is embedded in this groove. i Sputtering target material (102) is lowered by 0.1 mm from the surface of backing plate (104), a small piece of sputtering target material (101) is placed directly above it, and one material (103) is placed. Bonding is performed without reaching above the embedded sputtering target material (102).
なお溝の形状は、角型以外にも、７字形、あるいはＵ字
形などが有効である。又１■め込み用スパッタリング用
ターゲット（１０２）は、短形のもの壱つなげても有効
である。以下の構成により、スパッタリング用ターゲッ
トの継ぎ合せ部の、真下に、スパッタリング用ターゲッ
トを埋め込むことにより、スパッタリング中に、ロウ材
、又はパフ、トングプレート材が、生成膜に混入しなく
なる。In addition to the square shape, the shape of the groove is also effective, such as a 7-shape or a U-shape. It is also effective to connect two rectangular sputtering targets (102). With the following configuration, by embedding the sputtering target directly below the joint portion of the sputtering target, the brazing material, puff, or tongue plate material will not be mixed into the generated film during sputtering.
〔発明の効’ＪＳ ）
以上に述べたように本発明によれば、スパックリング用
ターゲットの継ぎ合せ部の、真下に、スパッタリング用
ターゲットを埋め込むことにより、スパッタリング中に
、ロウ材、又はバッキングプレート材が、生成膜に混入
しないという効采壱自°する。[Effects of the Invention'JS] As described above, according to the present invention, by embedding the sputtering target directly below the joint portion of the sputtering target, the brazing material or the backing plate can be removed during sputtering. One advantage is that the material does not get mixed into the produced film.
第１図は、本発明のスパッタリング用ターゲットの継ぎ
合せ部の一実施例を示す主要断面図。
第２図（ａ）（ｂ）は、従来のスパックリング用ターゲ
、）壱示す主要断面図１゜
７５３１￥１（＾）、（ｂ）は、スパッタリング川ター
’ｔ’ 、）の、エロージョンにより掘り下げの様子
を示す主要断面図。
以 」―FIG. 1 is a main cross-sectional view showing an embodiment of the sputtering target joint portion of the present invention. Figures 2 (a) and (b) show a conventional sputtering target; Main cross-sectional view showing the state of digging. ”―
Claims (1)
状を構成するスパッタリング用ターゲットにおいて、継
ぎ合せ部の真下のバッキングプレート上に、溝を形成し
、その溝にターゲットと同じ組成の小片を埋め込むこと
を特徴とするスパッタリング用ターゲット。In a sputtering target that forms a predetermined size and shape by joining multiple small parts together, a groove is formed on the backing plate directly below the joined part, and a small piece having the same composition as the target is embedded in the groove. A sputtering target characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24462386A JPS63100177A (en) | 1986-10-15 | 1986-10-15 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24462386A JPS63100177A (en) | 1986-10-15 | 1986-10-15 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63100177A true JPS63100177A (en) | 1988-05-02 |
Family
ID=17121499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24462386A Pending JPS63100177A (en) | 1986-10-15 | 1986-10-15 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63100177A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372694A (en) * | 1992-12-14 | 1994-12-13 | Leybold Aktiengesellschaft | Target for cathode sputtering |
| US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| GB2485603A (en) * | 2010-11-22 | 2012-05-23 | Plastic Logic Ltd | Segmented target for vapour deposition process |
| US20140110249A1 (en) * | 2011-03-04 | 2014-04-24 | Sharp Kabushiki Kaisha | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
| US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
| US10615011B2 (en) * | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
-
1986
- 1986-10-15 JP JP24462386A patent/JPS63100177A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5372694A (en) * | 1992-12-14 | 1994-12-13 | Leybold Aktiengesellschaft | Target for cathode sputtering |
| US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| GB2485603A (en) * | 2010-11-22 | 2012-05-23 | Plastic Logic Ltd | Segmented target for vapour deposition process |
| US9556509B2 (en) | 2010-11-22 | 2017-01-31 | Flexenable Limited | Vapour deposition |
| GB2498909B (en) * | 2010-11-22 | 2017-04-26 | Flexenable Ltd | Segmented target for vapour deposition process |
| GB2485603B (en) * | 2010-11-22 | 2017-06-14 | Flexenable Ltd | Segmented target for vapour deposition process |
| US20140110249A1 (en) * | 2011-03-04 | 2014-04-24 | Sharp Kabushiki Kaisha | Sputtering target, method for manufacturing same, and method for manufacturing thin film transistor |
| US10615011B2 (en) * | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
| US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
| US9120183B2 (en) | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
| US9412568B2 (en) | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100817742B1 (en) | Low temperature sputter target/backing plate joining technique and assemblies made thereby | |
| US5340435A (en) | Bonded wafer and method of manufacturing it | |
| TWI314367B (en) | Semiconductor light emitting device and manufacturing method therefor | |
| JP2007245211A (en) | Manufacturing method of target having backing plate | |
| JPS63100177A (en) | Target for sputtering | |
| JP2001057441A5 (en) | ||
| JPS5920470A (en) | Target for sputtering | |
| TWI528429B (en) | Method of manufacturing semiconductor device | |
| JPS63227774A (en) | Sputtering target | |
| JPS62243762A (en) | Backing plate for sputtering target | |
| JPS63143258A (en) | Sputtering target | |
| US6235612B1 (en) | Edge bond pads on integrated circuits | |
| JPH02254164A (en) | Divided sputtering target | |
| JPH0428866A (en) | Method for bonding sputtering target | |
| JPH06172991A (en) | Ceramic target for magnetron sputtering | |
| JPH02187305A (en) | Wafer dividing blade | |
| JPS60251272A (en) | Target for sputtering | |
| JPH0459075B2 (en) | ||
| JPS635537A (en) | Semiconductor device | |
| JPS63235471A (en) | Target for sputtering device | |
| JPS63317666A (en) | Target for sputtering | |
| JPH04168267A (en) | Coupling body for sputtering | |
| JPH093637A (en) | Split sputtering target | |
| KR102053304B1 (en) | Manufacturing method for large SiC plate | |
| JP2756363B2 (en) | Adhesive element |